CN101859791A - Pixel structure of active matrix display device - Google Patents
Pixel structure of active matrix display device Download PDFInfo
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- CN101859791A CN101859791A CN200910134853A CN200910134853A CN101859791A CN 101859791 A CN101859791 A CN 101859791A CN 200910134853 A CN200910134853 A CN 200910134853A CN 200910134853 A CN200910134853 A CN 200910134853A CN 101859791 A CN101859791 A CN 101859791A
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Abstract
The invention discloses a pixel structure of an active matrix display device. The pixel structure comprises a driving circuit, a luminous assembly and a shunt circuit. The driving circuit comprises a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor and a memory capacitor. The positive pole of the luminous assembly is coupled to the drain electrode of the fourth thin film transistor, while the negative pole is coupled to a common voltage. The shunt circuit comprises a sixth thin film transistor, the grid electrode of the six thin film transistor is coupled to a first scanning voltage, the source electrode of the six thin film transistor is coupled to the drain electrode of the fourth thin film transistor, and the drain electrode of the six thin film transistor is coupled to a second reference voltage. The pixel structure can improve the contrast of a displayed picture, and does not reduce the service life of the luminous assembly OLED.
Description
Technical field
The present invention is about a kind of dot structure of active matric display device, particularly relevant for a kind of dot structure with active matric display device of shunt circuit.
Background technology
Current, (organic light emitting diode OLED) has become the development priority of novel flat-plate display floater to Organic Light Emitting Diode, and OLED can be widely used in LCD, various backlight, communication and digital product etc.
See also Fig. 1, Fig. 1 is the circuit diagram of the pixel 10 of traditional a kind of active matric display device.Pixel 10 comprises known a kind of drive circuit 11 and luminescence component (OLED) 12.Drive circuit 11 comprises the first film transistor M1, the second thin-film transistor M2, the 3rd thin-film transistor M3, the 4th thin-film transistor M4, the 5th thin-film transistor M5 and capacitor C st, wherein, the 4th thin-film transistor M4 is in order to produce the drive current of driving OLED 12, so that OLED12 is luminous.The drain electrode of the first film transistor M1 is coupled to data voltage (Vdata), and grid is coupled to first scanning voltage (Scan), and source electrode is coupled to the drain electrode of the second thin-film transistor M2 and the grid of the 4th thin-film transistor M4.The grid of the second thin-film transistor M2 is coupled to second scanning voltage (XScan), and source electrode is coupled to the drain electrode of the 3rd thin-film transistor M3 and first end of capacitor C st.The grid of the 3rd thin-film transistor M3 also is coupled to first scanning voltage (Scan), and source electrode is coupled to earthing potential GND.The source electrode of the 4th thin-film transistor M4 is coupled to the drain electrode of the 5th thin-film transistor M5 and second end of capacitor C st, and drain electrode is coupled to the positive pole of OLED12.The grid of the 5th thin-film transistor M5 is coupled to emission voltage (EM), and source electrode is coupled to positive voltage (VDD).And the negative pole of OLED12 is coupled to voltage VSS, and wherein VSS is negative voltage or earthing potential.
See also Fig. 2, Fig. 2 is Scan, the XScan of known a kind of drive circuit 11 and the sequential chart of EM.At discharge (discharging) stage S1, when Vdata writes low GTG, for example Vdata is about 0.05V, this moment the 4th thin-film transistor M4 source voltage Vs=VDD=5V, grid voltage Vg=Vdata ≈ 0.05V, Vsg=Vs-Vg ≈ 4.95V decides the about 4.4uA of the electric current I ds OLED12 that flows through so can produce.This decides electric current I ds and can cause light to leak (light leakage), reduces the life-span that shows reduced value and luminescence component 12.
Summary of the invention
At above-mentioned technical problem, the present invention shunts the electric current that drive circuit produces by adding a thin-film transistor and reference voltage circuit, thereby reaches the purpose that improves the display frame contrast and do not influence the OLED life-span.
The invention provides a kind of dot structure of active matric display device, comprise drive circuit, luminescence component and shunt circuit.Drive circuit comprises the first film transistor, second thin-film transistor, the 3rd thin-film transistor, the 4th thin-film transistor, the 5th thin-film transistor and storage capacitance; This first film transistor drain is coupled to data voltage, and grid is coupled to first scanning voltage, and source electrode is coupled to the drain electrode of this second thin-film transistor and the grid of the 4th thin-film transistor; The grid of this second thin-film transistor is coupled to second scanning voltage, and source electrode is coupled to the drain electrode of the 3rd thin-film transistor and first end of this storage capacitance; The grid of the 3rd thin-film transistor is coupled to this first scanning voltage, and source electrode is coupled to first reference voltage; The source electrode of the 4th thin-film transistor is coupled to the drain electrode of the 5th thin-film transistor and second end of this storage capacitance; The grid of the 5th thin-film transistor is coupled to emission voltage, and source electrode is coupled to positive voltage.The positive pole of luminescence component is coupled to the drain electrode of the 4th thin-film transistor, and negative pole is coupled to common electric voltage.Shunt circuit comprises the 6th thin-film transistor, the grid of the 6th thin-film transistor is coupled to this first scanning voltage, the source electrode of the 6th thin-film transistor is coupled to the drain electrode of the 4th thin-film transistor, and the drain electrode of the 6th thin-film transistor is coupled to second reference voltage.
By the present invention, can improve the display frame contrast, and not influence OLED useful life.
Description of drawings
Fig. 1 is the circuit diagram of the pixel of traditional a kind of active matric display device;
Fig. 2 is a kind of sequential chart of drive circuit;
Fig. 3 is the circuit diagram of the pixel of active matric display device of the present invention.
Embodiment
For making purpose of the present invention, structure, feature and function thereof there are further understanding, cooperate embodiment to be described in detail as follows now.
See also Fig. 3, Fig. 3 is the circuit diagram of the pixel 30 of active matric display device of the present invention.Pixel 30 comprises drive circuit 31, luminescence component (OLED) 32 and shunt circuit 33.Drive circuit 31 comprises the first film transistor M1, the second thin-film transistor M2, the 3rd thin-film transistor M3, the 4th thin-film transistor M4, the 5th thin-film transistor M5 and capacitor C st, wherein, the 4th thin-film transistor M4 is in order to produce the drive current of driving OLED 32, so that OLED32 is luminous.The drain electrode of the first film transistor M1 is coupled to data voltage (Vdata), and grid is coupled to first scanning voltage (Scan), and source electrode is coupled to the drain electrode of the second thin-film transistor M2 and the grid of the 4th thin-film transistor M4.The grid of the second thin-film transistor M2 is coupled to second scanning voltage (XScan), and source electrode is coupled to the drain electrode of the 3rd thin-film transistor M3 and first end of capacitor C st.The grid of the 3rd thin-film transistor M3 also is coupled to first scanning voltage (Scan), and source electrode is coupled to voltage Vref1, and wherein Vref1 is negative voltage or earthing potential.The source electrode of the 4th thin-film transistor M4 is coupled to the drain electrode of the 5th thin-film transistor M5 and second end of capacitor C st, and drain electrode is coupled to the positive pole of OLED32.The grid of the 5th thin-film transistor M5 is coupled to emission voltage (EM), and source electrode is coupled to positive voltage (VDD).The negative pole of OLED32 is coupled to voltage VSS, and wherein VSS is negative voltage or earthing potential.Shunt circuit 33 comprises the 6th thin-film transistor M6, and the grid of the 6th thin-film transistor M6 is coupled to first scanning voltage (Scan), and source electrode is coupled to the drain electrode of the 4th thin-film transistor M4, and drain electrode is coupled to reference voltage Vref 2.
Add the 6th thin-film transistor M6 and reference voltage Vref 2, make the 4th thin-film transistor M4 be diverted to reference voltage Vref 2 with the electric current that writes (writing) stage S2 (seeing also Fig. 2) generation via the 6th thin-film transistor M6 at discharge (discharging) stage S1, the light that can effectively improve in discharge (discharging) stage leaks (light leakage) problem.
Through test, after adding shunt circuit 33, obviously as seen reduce to 20pA by 4.36 μ A at the flow through electric current of OLED32 of discharge (discharging) stage S1, effect improved obviously.
The present invention is described by above-mentioned related embodiment, yet the foregoing description is only for implementing example of the present invention.Must be pointed out that the embodiment that has disclosed does not limit the scope of the invention.On the contrary, change of being done and retouching without departing from the spirit and scope of the present invention all belongs to scope of patent protection of the present invention.
Claims (3)
1. the dot structure of an active matric display device is characterized in that comprising:
Drive circuit comprises the first film transistor, second thin-film transistor, the 3rd thin-film transistor, the 4th thin-film transistor, the 5th thin-film transistor and storage capacitance; This first film transistor drain is coupled to data voltage, and grid is coupled to first scanning voltage, and source electrode is coupled to the drain electrode of this second thin-film transistor and the grid of the 4th thin-film transistor; The grid of this second thin-film transistor is coupled to second scanning voltage, and source electrode is coupled to the drain electrode of the 3rd thin-film transistor and first end of this storage capacitance; The grid of the 3rd thin-film transistor is coupled to this first scanning voltage, and source electrode is coupled to first reference voltage; The source electrode of the 4th thin-film transistor is coupled to the drain electrode of the 5th thin-film transistor and second end of this storage capacitance; The grid of the 5th thin-film transistor is coupled to emission voltage, and source electrode is coupled to positive voltage; Luminescence component, the positive pole of this luminescence component is coupled to the drain electrode of the 4th thin-film transistor, and negative pole is coupled to common electric voltage; And
Shunt circuit, comprise the 6th thin-film transistor, the grid of the 6th thin-film transistor is coupled to this first scanning voltage, and the source electrode of the 6th thin-film transistor is coupled to the drain electrode of the 4th thin-film transistor, and the drain electrode of the 6th thin-film transistor is coupled to second reference voltage.
2. the dot structure of active matric display device as claimed in claim 1, it is characterized in that: this luminescence component is OLED.
3. the dot structure of active matric display device as claimed in claim 1, it is characterized in that: this first reference voltage is power cathode or earthing potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910134853A CN101859791A (en) | 2009-04-09 | 2009-04-09 | Pixel structure of active matrix display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910134853A CN101859791A (en) | 2009-04-09 | 2009-04-09 | Pixel structure of active matrix display device |
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| CN101859791A true CN101859791A (en) | 2010-10-13 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102542983A (en) * | 2010-12-22 | 2012-07-04 | 乐金显示有限公司 | Organic light emitting diode display |
| CN102737581A (en) * | 2012-05-31 | 2012-10-17 | 昆山工研院新型平板显示技术中心有限公司 | Pixel driving circuit, pixel display unit and display circuit |
| CN105761676A (en) * | 2016-05-11 | 2016-07-13 | 京东方科技集团股份有限公司 | Pixel circuit, driving method, array substrate, display panel and display device |
| CN106409233A (en) * | 2016-11-28 | 2017-02-15 | 上海天马有机发光显示技术有限公司 | Pixel circuit and driving method thereof and organic light-emitting display panel |
| CN106997747A (en) * | 2017-05-27 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence display panel and display device |
| CN107038997A (en) * | 2017-05-26 | 2017-08-11 | 京东方科技集团股份有限公司 | Image element circuit, image element driving method and display device |
| CN111462680A (en) * | 2020-04-22 | 2020-07-28 | 昆山国显光电有限公司 | Pixel circuit, driving method thereof, display panel and display device |
| CN111540307A (en) * | 2019-12-05 | 2020-08-14 | 友达光电股份有限公司 | Display device and display panel |
| CN113781971A (en) * | 2021-08-05 | 2021-12-10 | 合肥维信诺科技有限公司 | Display panel driving method and display panel |
| CN114220378A (en) * | 2022-01-07 | 2022-03-22 | 惠州视维新技术有限公司 | Shunt circuit of display device and display device |
| CN114373422A (en) * | 2021-10-29 | 2022-04-19 | 友达光电股份有限公司 | Light emitting diode driving circuit and light emitting diode driving circuit configuration |
-
2009
- 2009-04-09 CN CN200910134853A patent/CN101859791A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102542983B (en) * | 2010-12-22 | 2015-03-11 | 乐金显示有限公司 | Organic light emitting diode display |
| CN102542983A (en) * | 2010-12-22 | 2012-07-04 | 乐金显示有限公司 | Organic light emitting diode display |
| CN102737581A (en) * | 2012-05-31 | 2012-10-17 | 昆山工研院新型平板显示技术中心有限公司 | Pixel driving circuit, pixel display unit and display circuit |
| CN102737581B (en) * | 2012-05-31 | 2015-07-08 | 昆山工研院新型平板显示技术中心有限公司 | Pixel driving circuit, pixel display unit and display circuit |
| CN105761676A (en) * | 2016-05-11 | 2016-07-13 | 京东方科技集团股份有限公司 | Pixel circuit, driving method, array substrate, display panel and display device |
| EP3457393A4 (en) * | 2016-05-11 | 2019-11-06 | BOE Technology Group Co., Ltd. | Pixel circuit, driving method, array substrate, display panel and display device |
| WO2017193630A1 (en) * | 2016-05-11 | 2017-11-16 | 京东方科技集团股份有限公司 | Pixel circuit, driving method, array substrate, display panel and display device |
| US10037730B2 (en) | 2016-05-11 | 2018-07-31 | Boe Technology Group Co., Ltd. | Pixel circuit, drive method, array substrate, display panel and display device |
| CN106409233B (en) * | 2016-11-28 | 2019-08-06 | 上海天马有机发光显示技术有限公司 | A kind of pixel circuit, its driving method and organic light emitting display panel |
| CN106409233A (en) * | 2016-11-28 | 2017-02-15 | 上海天马有机发光显示技术有限公司 | Pixel circuit and driving method thereof and organic light-emitting display panel |
| US10818225B2 (en) | 2017-05-26 | 2020-10-27 | Boe Technology Group Co., Ltd. | Pixel circuit, pixel driving method and display device |
| CN107038997A (en) * | 2017-05-26 | 2017-08-11 | 京东方科技集团股份有限公司 | Image element circuit, image element driving method and display device |
| CN106997747B (en) * | 2017-05-27 | 2019-01-01 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel and display device |
| CN106997747A (en) * | 2017-05-27 | 2017-08-01 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence display panel and display device |
| US10950173B2 (en) | 2017-05-27 | 2021-03-16 | Ordos Yuansheng Optoelectronics Co., Ltd. | Organic light-emitting display panel and display device |
| CN111540307A (en) * | 2019-12-05 | 2020-08-14 | 友达光电股份有限公司 | Display device and display panel |
| CN111462680A (en) * | 2020-04-22 | 2020-07-28 | 昆山国显光电有限公司 | Pixel circuit, driving method thereof, display panel and display device |
| CN113781971A (en) * | 2021-08-05 | 2021-12-10 | 合肥维信诺科技有限公司 | Display panel driving method and display panel |
| CN114373422A (en) * | 2021-10-29 | 2022-04-19 | 友达光电股份有限公司 | Light emitting diode driving circuit and light emitting diode driving circuit configuration |
| CN114373422B (en) * | 2021-10-29 | 2023-12-19 | 友达光电股份有限公司 | Light emitting diode driving circuit and light emitting diode driving circuit configuration |
| CN114220378A (en) * | 2022-01-07 | 2022-03-22 | 惠州视维新技术有限公司 | Shunt circuit of display device and display device |
| CN114220378B (en) * | 2022-01-07 | 2024-01-19 | 惠州视维新技术有限公司 | Shunt circuit of display device and display device |
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Application publication date: 20101013 |