CN101847654A - Pixel structure of organic light-emitting diode display and manufacturing method thereof - Google Patents
Pixel structure of organic light-emitting diode display and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a pixel structure of an organic light-emitting diode display and a manufacturing method thereof. The pixel structure comprises a first transistor and a second transistor, wherein the first transistor comprises a first drain and a first source; when a voltage difference exists between the first drain and the first source, the first transistor has a first sub-threshold slope; the second transistor comprises a second drain and a second source; and when the voltage difference exists between the second drain and the second source, the second transistor has a second sub-threshold slope which is greater than the first sub-threshold slope. In the pixel structure, the first sub-threshold slope of the first transistor is smaller than the second sub-threshold slope of the second transistor to differentiate the current and voltage characteristics of the first and second transistors, so the first transistor can be endowed with a relatively higher switching speed, and the second transistor can provide various second drain currents.
Description
Technical field
The invention relates to dot structure of a kind of organic light emitting diode display and preparation method thereof, refer to a kind of dot structure and preparation method thereof of organic light emitting diode display of the two-transistor with different electric currents and voltage characteristic especially.
Background technology
In recent years, organic light emitting diode display (organic light-emitting diode display, OLED display) becomes popular emerging flat-panel screens gradually, because have that self-luminous, wide viewing angle, reaction time are fast, high-luminous-efficiency, low operating voltage, plate thickness are thin, can be made into advantages such as flexibility panel and processing procedure are simple, therefore be widely used in various planes and shown on the products.
The dot structure of organic light emitting diode display mainly comprises an Organic Light Emitting Diode, driving transistors and address transistor.Driving transistors is electrically connected to Organic Light Emitting Diode, and with the driving Organic Light Emitting Diode, and address transistor is electrically connected to driving transistors, with the transistorized switch of controlling and driving.Generally speaking, in the process of making organic light emitting diode display, driving transistors and address transistor are to utilize same processing procedure to make, make driving transistors and address transistor have identical electric current and voltage characteristic, so driving transistors have identical subcritical slope (subthreshold slope) with address transistor.
Yet, when driving transistors all has identical subcritical slope with address transistor, address transistor is the switch drive transistor rapidly, and cause organic light emitting diode display to produce ghost, perhaps driving transistors can't provide the electric current with linear change to Organic Light Emitting Diode, and the brightness that causes Organic Light Emitting Diode can't present multiple different GTGs changes.Therefore, produce the real target of making great efforts for industry of address transistor with different electric currents and voltage characteristic and driving transistors.
Summary of the invention
One of purpose of the present invention is to provide a kind of dot structure of organic light emitting diode display, with driving transistors and the address transistor with different electric currents and voltage characteristic.
For reaching above-mentioned purpose, the invention provides a kind of dot structure of organic light emitting diode display.Dot structure comprises that a substrate, is located at the first transistor, on the substrate and is located at transistor seconds and on the substrate and covers the partly first patterning protective layer of the first transistor and transistor seconds.The first transistor comprises that a first grid, is covered in insulating barrier, on first grid and the substrate and is located at the drain electrode of first on the insulating barrier, and is located at first source electrode and on the insulating barrier and is located at first passage layer on the insulating barrier between first drain electrode and first source electrode.When between first drain electrode of the first transistor and first source electrode when having a voltage difference, the first transistor have one the first time critical slope (subthreshold slope).Transistor seconds comprises that the second grid of being located between insulating barrier and substrate, is located at second on insulating barrier drain electrode, and is located at second source electrode and on the insulating barrier and is located at second channel layer on the insulating barrier between second drain electrode and second source electrode.When between second drain electrode of transistor seconds and second source electrode when having this voltage difference, transistor seconds has a critical slope for the second time, and for the second time critical slope greater than the critical slope first time.
For reaching above-mentioned purpose, the invention provides a kind of production method of pixel structure of organic light emitting diode display.At first, provide a substrate.Then, on substrate, form a first grid, a second grid, an insulating barrier, one first drain electrode, one first source electrode, one second drain electrode and one second source electrode.Then, on first drain electrode, first source electrode and insulating barrier, form a first passage layer and one first oxide skin(coating).Subsequently, on second drain electrode, second source electrode and insulating barrier, form a second channel layer.Then, on substrate, form one first patterning protective layer, and the first patterning protective layer exposes partly second drain electrode.
The present invention makes the first time of the first transistor critical slope less than the critical slope second time of transistor seconds, electric current and voltage characteristic with differentiation the first transistor and transistor seconds, make the first transistor can have switching speed faster, and transistor seconds then can provide the multiple second different drain current.
Description of drawings
Fig. 1 to Fig. 5 is the production method of pixel structure schematic diagram of the organic light emitting diode display of the present invention's one first preferred embodiment.
Fig. 6 is another enforcement aspect of the present invention's first preferred embodiment production method of pixel structure.
Fig. 7 is the another enforcement aspect of the present invention's first preferred embodiment production method of pixel structure.
Fig. 8 is the circuit diagram of the dot structure of first preferred embodiment.
Fig. 9 is first drain current of the first transistor of first preferred embodiment and the graph of a relation of the voltage difference between the first grid and first source electrode.
Figure 10 is second drain current of transistor seconds of first preferred embodiment and the graph of a relation of the voltage difference between the second grid and second source electrode.
Figure 11 and Figure 12 are the production method of pixel structure schematic diagram of the organic light emitting diode display of the present invention's one second preferred embodiment.
Figure 13 is for looking schematic diagram on the dot structure of the organic light emitting diode display of the present invention's second preferred embodiment.
Figure 14 is for being about the relation of transistorized channel width and subcritical slope under 4 microns the situation at passage length.
Drawing reference numeral:
10,100 dot structures, 12 substrates
14 first grids, 16 second grids
18 insulating barriers, 20 first source electrodes
22 first drain electrodes, 24 second source electrodes
26 second drain electrodes, 28 first passage layers
30 first oxide skin(coating)s, 32 second channel layers
34 the first transistors, 36 transistor secondses
38 first patterning protective layers, 40 transparency electrodes
42 second patterning protective layers, 44 organic luminous layers
46 metal electrodes, 48 Organic Light Emitting Diodes
50 scan lines, 52 data wires
54 power lines, 56 storage capacitors
58,60 relation curve W1 first passage width
W2 second channel width L1 first passage length
L2 second channel length
Embodiment
For making the general skill person who has the knack of the technical field of the invention can further understand the present invention, hereinafter the spy enumerates preferred embodiment of the present invention, and cooperate appended graphic, the effect that describes constitution content of the present invention in detail and will reach.
Please refer to Fig. 1 to Fig. 5.Fig. 1 to Fig. 5 has illustrated the production method of pixel structure schematic diagram of the organic light emitting diode display of the present invention's one first preferred embodiment.As shown in Figure 1, at first, provide a substrate 12.Substrate 12 is the various substrates that are used to make thin-film transistor, for example: silicon substrate, glass substrate or plastic base etc.Then, form a first metal layer on substrate 12, then carry out one first little shadow and etch process again, the patterning the first metal layer is to form a first grid 14 and a second grid 16.First grid 14 is the grids as a first transistor, and second grid 16 is the grids as a transistor seconds.Next, as shown in Figure 2, on first grid 14, second grid 16 and substrate 12, cover an insulating barrier 18, with first grid 14 and second grid 16 and the formed metal level of subsequent step of being electrically insulated, and make and partly be located on first grid 14 and the second grid 16 insulating barrier 18 gate insulator as the first transistor and transistor seconds.The material of insulating barrier 18 comprises silica (SiO
x) or silicon nitride (SiN
y) or silicon oxynitride (oxynitride, SiO
xN
y), but be not limited thereto.Then, on insulating barrier 18, form one second metal level, and then carry out one second little shadow and etch process, patterning second metal level, to form one first source electrode 20, one first drain electrode 22,1 second source electrode 24 and one second drain electrode 26, and make first source electrode 20 and first drain electrode 22 partially overlap first grid 14, and second source electrode 24 and second drain electrode 26 partially overlap second grid 16.First source electrode 20 and first drain electrode 22 be respectively as the source electrode and the drain electrode of the first transistor, and second source electrode 24 and second drains 26 respectively as the source electrode and the drain electrode of transistor seconds.
Subsequently, as shown in Figure 3, on substrate 12, cover a channel material layer, and then on the channel material layer, cover the monoxide layer.Then, carry out one the 3rd little shadow and etch process, while patterning channel material layer and oxide skin(coating), with simultaneously formation one first passage layer 28 and one first oxide skin(coating) 30 on the insulating barrier 18 of first source electrode 20 and 22 of first drain electrodes, and first oxide skin(coating) 30 is to trim with first passage layer 28.Then, as shown in Figure 4, cover a channel material layer on substrate 12, then carry out one the 4th little shadow and etch process, patterning channel material layer is with formation one second channel layer 32 on the insulating barrier 18 of second source electrode 24 and 26 of second drain electrodes.In this preferred embodiment, the channel material layer comprises metal oxide, polysilicon (polysilicon) or amorphous silicon (amorphous silicon), wherein metal oxide is to be selected from indium oxide gallium zinc (indium gallium zinc oxide, IGZO), indium oxide (indium oxide), zinc oxide (zinc oxide) and gallium oxide (gallium oxide), but be not limited thereto.And the material of first oxide skin(coating) 30 comprises silica, but is not limited thereto.In addition, first passage layer 28 is between first source electrode 20 and first drain electrode 22, with passage as the first transistor, and part covers first source electrode 20 and first drain electrode 22, makes first grid 14, insulating barrier 18, first source electrode 20, first drain electrode 22, first passage layer 28 and first oxide skin(coating) 30 constitute the first transistor 34.Second channel layer 32 is between second source electrode 24 and second drain electrode 26, with passage as transistor seconds, and part covers second source electrode 24 and second drain electrode 26, makes second grid 16, insulating barrier 18, second source electrode 24, second drain electrode 26 and second channel layer 32 constitute transistor seconds 36.
Next, as shown in Figure 5, utilize one the 5th little shadow and etch process, form one first patterning protective layer 38 on substrate 12, being used to protecting the first transistor 34 and transistor seconds 36, and the first patterning protective layer 38 exposes partly second drain electrode 26.Then, utilize one the 6th little shadow and etch process, on second drain electrode, the 26 and first patterning protective layer 38 that exposes, form a transparency electrode 40, to electrically connect second drain electrode 26 and follow-up formed Organic Light Emitting Diode of transistor seconds 36.Then, utilize one the 7th little shadow and etch process, on the transparency electrode 40 and the first patterning protective layer 38, form one second patterning protective layer 42, and expose partly transparency electrode 40.Then on the transparency electrode 40 that exposes, form an organic luminous layer 44 and a metal electrode 46 more in regular turn, so far promptly finish the dot structure 10 of the organic light emitting diode display of this preferred embodiment.In addition, transparency electrode 40, organic luminous layer 44 constitutes an Organic Light Emitting Diode 48 with metal electrode 46, and wherein transparency electrode 40 is as the anode of Organic Light Emitting Diode 48, and metal electrode 46 is as the negative electrode of Organic Light Emitting Diode 48.Transparency electrode 40 is made of the transparent conductive material with high work function, for example: indium zinc oxide (indium zinc oxide) or tin indium oxide (indium tin oxide) etc.Metal electrode 46 is made of low work function and erosion-resistant electric conducting material, for example: aluminium, magnadure etc.
Please refer to Fig. 6, and in the lump referring to figs. 1 to Fig. 5, Fig. 6 has illustrated another enforcement aspect of the present invention's first preferred embodiment production method of pixel structure.The difference of this enforcement aspect and above-mentioned preferred embodiment is that this enforcement aspect is not to form the first passage layer and first oxide skin(coating) simultaneously.As shown in Figure 6, utilize the step of Fig. 1 to Fig. 2 to produce after substrate 12, first grid 14, second grid 16, insulating barrier 18, first source electrode 20, first drain electrode 22, second source electrode 24 and second drain electrode 26 earlier, carry out a deposition manufacture process, form a channel material layer.Then, carry out a little shadow and an etch process, patterning channel material layer is to form first passage layer 28.Then carry out an oxidation process (oxidationprocess) again, on first passage layer 28, form first oxide skin(coating) 30, as shown in Figure 3.The follow-up step of this enforcement aspect is identical with the step of above-mentioned preferred embodiment Fig. 4 and Fig. 5, therefore this do not give unnecessary details more.
In addition, the present invention is not limited to form earlier the first passage layer and first oxide skin(coating), just forms the second channel layer then.The present invention also can form the second channel layer earlier, forms the first passage layer and first oxide skin(coating) again.Please refer to Fig. 7, and in the lump referring to figs. 1 to Fig. 2 and Fig. 4 and Fig. 5, Fig. 7 has illustrated the another enforcement aspect of the present invention's first preferred embodiment production method of pixel structure.As shown in Figure 7, the difference of this enforcement aspect and above-mentioned preferred embodiment is, this enforcement aspect is to utilize the step of Fig. 1 to Fig. 3 to produce after substrate 12, first grid 14, second grid 16, insulating barrier 18, first source electrode 20, first drain electrode 22, second source electrode 24 and second drain electrode 26, form second channel layer 32 earlier, then, as shown in Figure 4, form the first passage layer 28 and first oxide skin(coating) 30 again.The follow-up step of this enforcement aspect is identical with the step of above-mentioned preferred embodiment Fig. 5, therefore seldom gives unnecessary details.
For running and the advantage that clearly demonstrates the first preferred embodiment dot structure, first passage layer described below and the employed material of second channel layer are to be example with the metal oxide, but are not limited thereto.Please refer to Fig. 8, and in the lump with reference to figure 5, Fig. 5 and Fig. 8 have illustrated the schematic diagram of dot structure of the organic light emitting diode display of the present invention's first preferred embodiment, wherein Fig. 5 is the generalized section of the dot structure of first preferred embodiment, and Fig. 8 is the circuit diagram of the dot structure of first preferred embodiment.As shown in Figure 8, the dot structure 10 of organic light emitting diode display is except comprising the first transistor 34, transistor seconds 36 and Organic Light Emitting Diode 48, other comprises one scan line 50, a data wire 52, a power line 54 and a storage capacitors 56, is located on the substrate 12.First grid 14 is electrically connected to scan line 50, the first source electrodes 20 and is electrically connected to the end that data wire 52, the first drain electrodes 22 are electrically connected to second grid 16 and storage capacitors 56.The other end of storage capacitors 56 is electrically connected to power line 54, and second source electrode 24 is electrically connected to power line 54, and second drain electrode 26 is electrically connected to the anode of Organic Light Emitting Diode 48.The negative electrode of Organic Light Emitting Diode 48 is electrically connected to an earth terminal.In this preferred embodiment, the first transistor 34 is an address transistor (switching transistor), is used for this dot structure 10 of switch and transmits shows signal to storage capacitors 56 and transistor seconds 36.Transistor seconds 36 is a driving transistors (driving transistor), when the first transistor 34 transmits shows signal to storage capacitors 56, transistor seconds 36 can be unlocked, and makes power line 54 provide electric current to see through transistor seconds 36 and drives Organic Light Emitting Diode 48, and then produce light.As shown in Figure 5; it should be noted that; this preferred embodiment as the first transistor 34 of address transistor as transistor seconds more than 36 one first oxide skin(coating)s 30 of driving transistors; and first oxide skin(coating) 30 is located between the first passage layer 28 and the first patterning protective layer 38, and directly contacts with first passage layer 28.Transistor seconds 36 does not include oxide skin(coating), so the first patterning protective layer 38 that is positioned on the transistor seconds 36 is directly contact and the upper surface that covers second channel layer 32.So the electric current of the first transistor 34 and electric current and the voltage characteristic that voltage characteristic is different from transistor seconds 36.
The present invention is electric current and the voltage characteristic that comes comparison the first transistor and transistor seconds with transistorized subcritical slope.Please refer to Fig. 9 and Figure 10, and in the lump with reference to figure 5.Fig. 9 has illustrated the first drain current I of the first transistor of first preferred embodiment
D1And the voltage difference V between the first grid and first source electrode
GS1Graph of a relation, Figure 10 has illustrated the second drain current I of the transistor seconds of first preferred embodiment
D2And the voltage difference V between the second grid and second source electrode
GS2Graph of a relation.Below be that example illustrates the method for measuring subcritical slope with the first transistor.As shown in Figure 5, provide a particular voltage difference V earlier
DS, for example: 10 volts, to first 20 of 22 and first source electrodes of drain electrode of the first transistor 34, and first source electrode 20 of the first transistor 34 is connected to earth terminal.Then, other provides between the first grid 14 and first source electrode 20 of a demodulating voltage difference to the first transistor 34, and measures the first drain current I of the first transistor 34 simultaneously
D1And, the scope of the demodulating voltage difference of this preferred embodiment be from-20 volts be scanned up to+20 volts, to obtain the corresponding first drain current I
D1, can obtain the first drain current I of the first transistor 34
D1And first grid 14 and 20 voltage difference V of first source electrode
GS1Relation curve 58, as shown in Figure 9.But the scope of demodulating voltage difference is not limited thereto.The first drain current I
D1And first grid 14 and 20 voltage difference V of first source electrode
GS1Relation curve have an electric current linear paragraph jumpy, and the inverse of the slope of this linear paragraph is subcritical slope (subthreshold slope), also, the subcritical slope of the steeper slopes of this linear paragraph is more little, its account form is dV
GS/ dlog (I
D).Therefore, first 20 of 22 and first source electrodes of drain electrode when the first transistor 34 have particular voltage difference V
DSThe time, the first transistor 34 has critical slope of a first time.In like manner can record the second drain current I of transistor seconds 36
D2And second grid 16 and 24 voltage difference V of second source electrode
GS2Relation curve 60, as shown in figure 10.And, when second drain electrode 26 of transistor seconds 36 has identical particular voltage difference V with 24 of second source electrodes
DS, transistor seconds 36 has critical slope of a second time.In this preferred embodiment, critical slope is about 0.19 volt/per ten amperes (V/decade) for the first time, and critical slope is about 0.53V/decade for the second time.Hence one can see that, by first oxide skin(coating) 30 is set on the first passage layer 28 of the first transistor 34 more, can make effectively transistor seconds 36 the second time critical slope greater than the critical slope first time of the first transistor 34.Therefore, the first transistor 34 can have switching speed faster, and with the operation of high-speed switch dot structure 10, transistor seconds 36 then can have the second milder drain current I
D2And second grid 16 and 24 voltage difference V of second source electrode
GS2Relation curve.So, at the voltage difference V that 24 of the different second grid 16 and second source electrodes are provided
GS2Situation under, transistor seconds 36 can have the second different drain current I
D2, so that the multiple second different drain current I to be provided
D2To Organic Light Emitting Diode 48, and then present multiple different GTG brightness.
Please refer to Figure 11 to Figure 13, and in the lump with reference to figure 1 and Fig. 3, Figure 11 and Figure 12 have illustrated the production method of pixel structure schematic diagram of the organic light emitting diode display of the present invention's one second preferred embodiment, wherein Figure 12 is the generalized section of the dot structure of the organic light emitting diode display of the present invention's second preferred embodiment, Figure 13 illustrated the present invention's second preferred embodiment organic light emitting diode display dot structure on look schematic diagram.This preferred embodiment is that with the difference of above-mentioned preferred embodiment this preferred embodiment forms second oxide skin(coating) simultaneously when forming the second channel layer.As shown in figure 11, this preferred embodiment covers a channel material layer and monoxide layer in regular turn on substrate 12 after the step of utilizing Fig. 1 to Fig. 2 is produced substrate 12, first grid 14, second grid 16, insulating barrier 18, first drain electrode, 22, first source electrode 20, second drain electrode, 26 and second source electrode 24.Then, carry out a little shadow and an etch process, patterning channel material layer and oxide skin(coating), with while formation first passage layer 28 and first oxide skin(coating) 30 on first drain electrode, 22, first source electrode 20 and insulating barrier 18, and on second drain electrode, 26, second source electrode 24 and insulating barrier 18, form the second channel layer 32 and second oxide skin(coating) 102.But not as limit, the present invention also can carry out little shadow of twice and etch process, forms the first passage layer 28 and first oxide skin(coating) 30 with elder generation, and then forms the second channel layer 32 and second oxide skin(coating) 102.Perhaps, form the second channel layer 32 and second oxide skin(coating) 102 earlier, and then form the first passage layer 28 and first oxide skin(coating) 30.Then; as shown in figure 12; on substrate 12, form the first patterning protective layer 38, transparency electrode 40, the second patterning protective layer 42, organic luminous layer 44 and metal electrode 46 in regular turn, so far promptly finish the dot structure 100 of the organic light emitting diode display of second preferred embodiment.The present invention is not limited to above-mentioned steps, and the step that the present invention forms the second channel layer and second oxide skin(coating) also can be carried out before forming the step of first passage layer and first oxide skin(coating), and perhaps the present invention forms second oxide skin(coating) and also can carry out after formation second channel layer.It should be noted that; as shown in figure 13; the difference of the dot structure 100 of this preferred embodiment and the dot structure of first preferred embodiment is; this preferred embodiment is located at first oxide skin(coating) 30 of 38 of first passage layer 28 and the first patterning protective layers except the first transistor 34 comprises; transistor seconds 36 also comprises one second oxide skin(coating) 102, is located between the second channel layer 32 and the first patterning protective layer 38.In addition, the first transistor 34 of this preferred embodiment has a first passage width W 1 and a first passage length L 1, and transistor seconds 36 has a second channel width W 2 and a second channel length L 2.And first passage length L 1 is identical in fact with second channel length L 2, and first passage width W 1 is less than second channel width W 2.
Please refer to Figure 14, and in the lump with reference to Figure 13.Figure 14 has illustrated at passage length and has been about the transistorized channel width of second preferred embodiment under 4 microns the situation and the relation of mobility and subcritical slope.As shown in figure 14, fix and first passage layer 28 and second channel layer 32 have first oxide skin(coating) 30 and second oxide skin(coating) 102 respectively when being provided with thereon at passage length, when channel width was big more, subcritical slope was big more, and mobility change is little.Therefore, this preferred embodiment is same as in first passage length L 1 under the situation of second channel length L 2, and first passage width W 1 is less than second channel width W 2, make the first transistor 34 the first time critical slope less than the critical slope second time of transistor seconds 36.So the first transistor 34 can have switching speed faster, transistor seconds 36 then can provide the multiple second different drain current to Organic Light Emitting Diode.But the invention is not restricted to that first passage layer and second channel layer have first oxide skin(coating) respectively and second oxide skin(coating) is provided thereon, first passage layer of the present invention and second channel layer also can not have first oxide skin(coating) and second oxide skin(coating) is provided thereon, and only change the first passage width of the first transistor and the second channel width of transistor seconds, make the first passage width less than the second channel width, therefore the first critical slope of the first transistor is able to the critical slope less than transistor seconds, and then meets the first transistor as address transistor and the transistor seconds demand as driving transistors.
In sum, utilization of the present invention only is provided with first oxide skin(coating) on the first passage layer of the first transistor, and produce the first transistor and transistor seconds with different channel widths, make the first transistor the first time critical slope less than the critical slope second time of transistor seconds, and then differentiation is as the first transistor of address transistor and electric current and voltage characteristic as the transistor seconds of driving transistors.Therefore, the first transistor can have switching speed faster, and meeting the function of address transistor, and transistor seconds then can provide the multiple second different drain current, to meet the function of driving transistors.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (21)
1. the dot structure of an organic light emitting diode display is characterized in that, described dot structure comprises:
One substrate;
One the first transistor is located on the described substrate, and described the first transistor comprises:
One first grid;
One insulating barrier covers on described first grid and the described substrate;
One first drain electrode is located on the described insulating barrier;
One first source electrode is located on the described insulating barrier; And
One first passage layer is located on this insulating barrier between described first drain electrode and described first source electrode, wherein when described first of described the first transistor drain and described first source electrode between when having a voltage difference, described the first transistor has critical slope of a first time;
One transistor seconds is located on the described substrate, and described transistor seconds comprises:
One second grid is located between described insulating barrier and the described substrate;
One second drain electrode is located on the described insulating barrier;
One second source electrode is located on the described insulating barrier; And
One second channel layer, be located on the described insulating barrier between described second drain electrode and described second source electrode, wherein when between described second drain electrode of described transistor seconds and described second source electrode when having described voltage difference, described transistor seconds has a critical slope for the second time, and the described second time critical slope greater than the described first time of critical slope; And
One first patterning protective layer covers partly described the first transistor and described transistor seconds.
2. dot structure as claimed in claim 1; it is characterized in that; described the first transistor comprises one first oxide skin(coating) in addition; be located between described first passage layer and the described first patterning protective layer; and directly contact with described first passage layer, and the described first patterning protective layer directly contacts and covers a upper surface of described second channel layer.
3. dot structure as claimed in claim 2 is characterized in that, described first oxide skin(coating) and described first passage layer trim.
4. dot structure as claimed in claim 2 is characterized in that, described first oxide skin(coating) is a silica.
5. dot structure as claimed in claim 1 is characterized in that, described first passage layer and described second channel layer comprise a metal oxide, polysilicon or amorphous silicon.
6. dot structure as claimed in claim 5 is characterized in that, described metal oxide is indium oxide gallium zinc, indium oxide, zinc oxide or gallium oxide.
7. dot structure as claimed in claim 1 is characterized in that, described first passage layer segment covers described first drain electrode and described first source electrode, and described second channel layer segment covers described second drain electrode and described second source electrode.
8. dot structure as claimed in claim 1; it is characterized in that; described the first transistor comprises one first oxide skin(coating) in addition; be located between described first passage layer and the described first patterning protective layer; and described transistor seconds comprises one second oxide skin(coating) in addition, is located between described second channel layer and the described first patterning protective layer.
9. dot structure as claimed in claim 8 is characterized in that, a first passage width of described the first transistor is less than a second channel width of described transistor seconds.
10. dot structure as claimed in claim 1 is characterized in that, the described first patterning protective layer exposes described second drain electrode of part, and described dot structure comprises a transparency electrode in addition, is located on described second drain electrode and the described first patterning protective layer.
11. dot structure as claimed in claim 10; it is characterized in that; described dot structure comprises one second patterning protective layer, an organic luminous layer and an electrode in addition; be located in regular turn respectively on described transparency electrode and the described first patterning protective layer, wherein said transparency electrode, described organic luminous layer and described electrode constitute an Organic Light Emitting Diode.
12. dot structure as claimed in claim 1, it is characterized in that, described the first transistor is an address transistor, and described transistor seconds is a driving transistors, and the described second grid of described transistor seconds is electrically connected to described first drain electrode of described the first transistor.
13. the production method of pixel structure of an organic light emitting diode display is characterized in that, described method comprises:
One substrate is provided;
On described substrate, form a first grid, a second grid, an insulating barrier, one first drain electrode, one first source electrode, one second drain electrode and one second source electrode;
On described first drain electrode, described first source electrode and described insulating barrier, form a first passage layer and one first oxide skin(coating);
On described second drain electrode, described second source electrode and described insulating barrier, form a second channel layer; And
On described substrate, form one first patterning protective layer, and the described first patterning protective layer exposes partly described second drain electrode.
14. manufacture method as claimed in claim 13 is characterized in that, described first passage layer and described first oxide skin(coating) form simultaneously.
15. manufacture method as claimed in claim 13 is characterized in that, the material of described first passage layer comprises a metal oxide, polysilicon or amorphous silicon.
16. manufacture method as claimed in claim 15 is characterized in that, described metal oxide comprises indium oxide gallium zinc, indium oxide, zinc oxide or gallium oxide.
17. manufacture method as claimed in claim 13 is characterized in that, the material of described first oxide skin(coating) is a silica.
18. manufacture method as claimed in claim 13 is characterized in that, the step that forms described first passage layer and described first oxide skin(coating) comprises:
On described first drain electrode, described first source electrode and described insulating barrier, form described first passage layer;
And
Carry out an oxidation process, on described first passage layer, form described first oxide skin(coating).
19. manufacture method as claimed in claim 13 is characterized in that, the step that forms described second channel layer comprises formation one second oxide skin(coating).
20. manufacture method as claimed in claim 13 is characterized in that, after the step that forms the described first patterning protective layer, described method is included in addition on described second drain electrode and the described first patterning protective layer and forms a transparency electrode.
21. manufacture method as claimed in claim 20; it is characterized in that; after the step that forms described transparency electrode; this method is included in addition on described transparency electrode and the described first patterning protective layer and forms one second patterning protective layer, an organic luminous layer and a metal electrode in regular turn, makes described transparency electrode, described organic luminous layer and described metal electrode constitute an Organic Light Emitting Diode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102403364A (en) * | 2011-08-30 | 2012-04-04 | 友达光电股份有限公司 | Thin film transistor of display panel and manufacturing method thereof |
| CN102623486A (en) * | 2011-11-30 | 2012-08-01 | 友达光电股份有限公司 | Organic light emitting display structure and organic light emitting display |
| CN106896610A (en) * | 2017-02-24 | 2017-06-27 | 厦门天马微电子有限公司 | Array base palte, display panel and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040222472A1 (en) * | 2001-08-16 | 2004-11-11 | International Business Machines Corporation | Thin film transistor and use of same |
| CN1896852A (en) * | 2005-07-14 | 2007-01-17 | 广辉电子股份有限公司 | Production of liquid-crystal display device |
| US20080096332A1 (en) * | 2006-10-23 | 2008-04-24 | Samsung Electronics Co., Ltd | Method of manufacturing a thin-film transistor substrate |
-
2010
- 2010-04-22 CN CN2010101670360A patent/CN101847654B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040222472A1 (en) * | 2001-08-16 | 2004-11-11 | International Business Machines Corporation | Thin film transistor and use of same |
| CN1896852A (en) * | 2005-07-14 | 2007-01-17 | 广辉电子股份有限公司 | Production of liquid-crystal display device |
| US20080096332A1 (en) * | 2006-10-23 | 2008-04-24 | Samsung Electronics Co., Ltd | Method of manufacturing a thin-film transistor substrate |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403364A (en) * | 2011-08-30 | 2012-04-04 | 友达光电股份有限公司 | Thin film transistor of display panel and manufacturing method thereof |
| CN103337521A (en) * | 2011-08-30 | 2013-10-02 | 友达光电股份有限公司 | Thin film transistor of display panel and manufacturing method thereof |
| CN102403364B (en) * | 2011-08-30 | 2014-02-26 | 友达光电股份有限公司 | Thin film transistor of display panel and manufacturing method thereof |
| US8674350B2 (en) | 2011-08-30 | 2014-03-18 | Au Optronics Corp. | Thin film transistor of display panel and method of making the same |
| US9012275B2 (en) | 2011-08-30 | 2015-04-21 | Au Optronics Corp. | Method of forming thin film transistor |
| CN103337521B (en) * | 2011-08-30 | 2016-04-13 | 友达光电股份有限公司 | Thin film transistor of display panel |
| CN102623486A (en) * | 2011-11-30 | 2012-08-01 | 友达光电股份有限公司 | Organic light emitting display structure and organic light emitting display |
| TWI474479B (en) * | 2011-11-30 | 2015-02-21 | Au Optronics Corp | Organic light emitting display structure and organic light emitting display |
| CN106896610A (en) * | 2017-02-24 | 2017-06-27 | 厦门天马微电子有限公司 | Array base palte, display panel and display device |
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| CN101847654B (en) | 2012-04-18 |
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