CN101845618B - Manufacturing method of silicon nitride film window for imaging of X-ray microlens - Google Patents
Manufacturing method of silicon nitride film window for imaging of X-ray microlens Download PDFInfo
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- CN101845618B CN101845618B CN2010101677514A CN201010167751A CN101845618B CN 101845618 B CN101845618 B CN 101845618B CN 2010101677514 A CN2010101677514 A CN 2010101677514A CN 201010167751 A CN201010167751 A CN 201010167751A CN 101845618 B CN101845618 B CN 101845618B
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Abstract
The invention discloses a manufacturing method for a silicon nitride film window for imaging of an X-ray microlens, which comprises the following steps: respectively depositing low-stress silicon nitride films on both surfaces of a silicon chip substrate; using a mask plate to transfer a silicon nitride window diagram onto a photoresist which corresponds to the silicon nitride window diagram and is covered on one silicon nitride film; forming a photoetching opening area which is exposed and developed and a non-photoetching area which is not exposed and developed of the photoresist; etching the silicon nitride film by the photoetching opening area and exposing the silicon chip substrate; etching a silicon nitride window diagram groove; forming a silicon residual layer between the bottom of the silicon nitride window diagram groove and the other silicon nitride film; and finally utilizing a wet etching method to remove the silicon residual layer. The manufacturing method of the invention reduces damage to the silicon nitride film window and makes the silicon nitride film window more regular, can randomly regulate the thickness of the silicon substrate, shortens the manufacturing period of the finished product and improves the yield and the production benefit.
Description
Technical field
The present invention relates to a kind of method of manufacture of silicon nitride window of accurate ray microscopy, particularly a kind of making method of X ray microlens silicon nitride film window for imaging.
Background technology
The sport technique segment that the current preparation method who is used for the silicon nitride window of X ray microlens imaging use comprises is: on silicon chip, plate the certain thickness silicon nitride film of one deck with plasma enhanced chemical vapor deposition method (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD); On silicon nitride film, smear one deck photoresist material and carry out photoetching, development; And carry out reactive ion etching (RIE), carry out wet etching or dry etching at last to obtain the silicon nitride window.
Can be commonly used in the etching of silicon, silicon-dioxide to SF6, the anisotropy of polyfluoro family relatively poor (especially SF6) is because SF6 provides polyfluoro; Can carry out comparatively intensive etching to silicon; But the fluorosilicone compound boiling point is too low, and polymkeric substance (polymer) is assembled difficulty, causes etching easily.
The preparing method's of current silicon nitride window major defect is: owing to have anisotropy on the silicon erosion rate, the shape of the finished product that is obtained and intended shape are prone to bigger deviation; And the etching time that thick silicon chip needs is long partially, and the damage that causes the silicon nitride window to receive is bigger, is easy to generate pollutent; The thickness of silicon substrate is difficult to regulate on request.
In view of the above problems, the present invention discloses a kind of making method of X ray microlens silicon nitride film window for imaging.It has technical characterictic as mentioned below, to solve existing problem.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of making method of X ray microlens silicon nitride film window for imaging, this method is with low cost, manufacture simple, process stabilizing, and can effectively improve product good article rate and productivity effect.
The making method of a kind of X ray microlens silicon nitride film window for imaging of the present invention may further comprise the steps:
One silicon wafer substrate is provided, and said silicon wafer substrate comprises silicon wafer substrate end face and silicon wafer substrate bottom surface;
Optional, carry out chemical rightenning at said silicon wafer substrate end face, be used for forming chemical polished surface at said silicon wafer substrate end face; Carry out chemical-mechanical planarization (CMP) in said silicon wafer substrate bottom surface, be used for formation chemically machinery polished face in said silicon wafer substrate bottom surface;
Said wafer substrates end face deposition growing one deck first silicon nitride film, in said silicon wafer substrate bottom surface shape deposition growing one deck second silicon nitride film;
On said first silicon nitride film, spare adhesive process to form one deck photoresist material (Photo resist);
Provide one comprise a silicon nitride window figure at least mask plate (Photo Mask); Utilize said mask plate (PhotoMask) on based on first silicon nitride film that scribbles one deck photoresist material, to carry out photoetching (Lithography) and (Development) technology of developing; On said silicon nitride window figure transfer to corresponding said photoresist material with it; Said photoetching (Lithography) comprises exposure (Mask expose) process; Be used on said photoresist material, forming the transfer pattern of said silicon nitride window figure; Form said photoresist material by the lithographic opening district of exposure imaging, and the non-photoetching district of unexposed development, and expose the preparatory etched portions that in subsequent handling, will be etched away of first silicon nitride film through the lithographic opening district;
In said lithographic opening district said first silicon nitride film is carried out reactive ion etching (RIE), be used for etching and remove the preparatory etched portions between said lithographic opening district and said wafer substrates;
Carry out dark silicon etching process; Said silicon wafer substrate owing to etch silicon nitride window figure groove on the said preparatory etched portions of the etching institute area exposed; And, between the bottom of said silicon nitride window figure groove and said second silicon nitride film, form one deck silicon residual layer;
Said silicon wafer substrate to being formed with the silicon residual layer is carried out wet etching, and etching removes said silicon residual layer to accomplish the making of silicon nitride film window.
The making method of above-mentioned X ray microlens silicon nitride film window for imaging, wherein, the preparatory etched portions of said etching utilizes reactive ion etching (RIE) to realize.
The making method of above-mentioned X ray microlens silicon nitride film window for imaging, wherein, said silicon wafer substrate is the silicon single crystal in 100 crystal orientation.The thickness of said silicon wafer substrate is 525 microns.Said first silicon nitride film, second silicon nitride film all are that thickness is the low stress nitride silicon film of 100 nanometers.
In a kind of process of technology controlling and process; The making method of above-mentioned X ray microlens silicon nitride film window for imaging; Wherein, The polymethylmethacrylate glue (PMMA) that the formed said photoresist material of said even adhesive process is 50 micron thickness, said dark silicon etching process are that the mixed gas that utilizes gas part ratio to account for 80.5% sulfur hexafluoride carries out, and the etching loop cycle of said dark silicon etching process (Cycle time) is 3 times; The etching magneticstrength of said dark silicon etching process is 1 special Lars; The etching radio frequency power of said dark silicon etching process is 3000 watts, and the etching time of said dark silicon etching process is 15 minutes, and the thickness of said silicon residual layer is 20 microns.
Carry out said dark silicon etching process, at least the photoresist material in the non-photoetching district of retained part thickness.
Said wet etching is to utilize 20% potassium hydroxide solution, under 80 ℃, carry out; Wherein, the etching time of said wet etching is 45 minutes, is used for removing fully the photoresist layer in non-photoetching district, and removes said silicon residual layer.
In the process of other a kind of technology controlling and process; The making method of above-mentioned X ray microlens silicon nitride film window for imaging; Wherein, The polymethylmethacrylate glue (PMMA) that the formed said photoresist material of said even adhesive process is 3 micron thickness, said dark silicon etching process are that the mixed gas that utilizes gas part ratio to account for 87.5% sulfur hexafluoride carries out, and the etching loop cycle of said dark silicon etching process (Cycle time) is 2 times; The etching magneticstrength of said dark silicon etching process is 1 special Lars; The etching radio frequency power of said dark silicon etching process is 3500 watts, and the etching time of said dark silicon etching process is 15 minutes, and the thickness of said silicon residual layer is 20 microns.
Carry out said dark silicon etching process, etch away the photoresist material that is positioned at said non-photoetching district fully; Simultaneously, etch away said first silicon nitride film fully, and said silicon wafer substrate is carried out partial etching be used for the said silicon wafer substrate of attenuate.The said silicon wafer substrate of said attenuate is with the reduced thickness to 200 of said silicon wafer substrate micron.
Said wet etching is to utilize 20% potassium hydroxide solution, under 80 ℃, carry out; Wherein, the etching time of said wet etching is 45 minutes, is used for removing fully said silicon residual layer.
The making method of a kind of X ray microlens of the present invention silicon nitride film window for imaging makes it compared with prior art owing to adopt technique scheme, has the following advantages and positively effect:
1, the shape of silicon nitride film window is more regular, and can be designed as random shape.
2, reduced in the etching process the pollution of silicon nitride window, simultaneously, reduced damage, made silicon nitride film more smooth silicon nitride film window.
3, can regulate the thickness of silicon substrate arbitrarily, this equipment and technology for some specific product demand specific silicon substrate thickness is most important.
4, shorten the fabrication cycle time of finished product, improved yield rate and productivity effect.
Description of drawings
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.Yet appended accompanying drawing only is used for explanation and sets forth, and does not constitute limitation of the scope of the invention.
Fig. 1 is a kind of structural representation of silicon wafer substrate.
Fig. 2 is the structural representation of one deck silicon nitride film of having grown respectively in silicon wafer substrate end face and silicon wafer substrate bottom surface.
Fig. 3 is the structural representation that on first silicon nitride film, forms one deck photoresist material.
Fig. 4 carries out photoetching to form lithographic opening district and non-photoetching district on photoresist material, and exposes the structural representation of preparatory etched portions through the lithographic opening district.
Fig. 5 carries out reactive ion etching to expose the structural representation of silicon wafer substrate through the lithographic opening district to first silicon nitride film.
Fig. 6 carries out dark silicon etching process in silicon wafer substrate, form the structural representation of silicon nitride window figure groove and silicon residual layer.
Fig. 7 is the structural representation that removes the silicon nitride film window that obtains behind photoresist material and the silicon residual layer in non-photoetching district.
Fig. 8 carries out dark silicon etching process, the structural representation of attenuate silicon wafer substrate, formation silicon nitride window figure groove and silicon residual layer in silicon wafer substrate.
Fig. 9 is the structural representation that removes the silicon nitride film window that obtains behind the silicon residual layer of the silicon wafer substrate behind the attenuate.
Figure 10 is the process flow diagram of the making method of a kind of X ray microlens silicon nitride film window for imaging of the present invention.
Embodiment
According to claim of the present invention and the disclosed content of summary of the invention, technical scheme of the present invention is specific as follows said:
Referring to shown in Figure 1; Optional; The end face of one silicon wafer substrate 100 and bottom surface are passed through chemical rightenning and chemical-mechanical planarization (CMP) respectively, form a chemical polished surface (not shown) and a chemically machinery polished face (not shown) respectively in the end face and the bottom surface of silicon wafer substrate 100.Silicon wafer substrate 100 can be the silicon single crystal in 100 crystal orientation of N type or P type.
Referring to shown in Figure 2, through after cleaning, preferably utilize Low Pressure Chemical Vapor Deposition (LPCVD), first silicon nitride film 110 of one deck low stress nitride silicon film of growing respectively in end face, the bottom surface of silicon wafer substrate 100, second silicon nitride film 120.Deposit this first silicon nitride film 110, second silicon nitride film 120 plasma enhanced chemical vapor deposition method also capable of using (PECVD) waits other modes to implement.
Referring to shown in Figure 3, silicon wafer substrate 100 is through after cleaning, and spare adhesive process being positioned on first silicon nitride film 110 of silicon wafer substrate 100, and with formation one deck photoresist material 130, photoresist material 130 all covers first silicon nitride film 110.Photoresist material 130 has multiple choices, preferred polymethylmethacrylate glue (PMMA).
Referring to shown in Figure 4; Provide one comprise a silicon nitride window figure at least mask plate (Photo Mask; Not shown), utilize mask plate (Photo Mask) on photoresist material 130, to carry out photoetching (Lithography) and (Development) technology of developing, photoetching (Lithography) comprises exposure (Mask expose) process; On the silicon nitride window figure transfer on the mask plate to corresponding photoresist material 130 with it, on photoresist material 130, form the transfer pattern of silicon nitride window figure.
Wherein, photoresist material 130 forms by the lithographic opening district 200a of exposure imaging, and the non-photoetching district 200b of unexposed development.The result who obtains is; On photoresist material 130, form the transfer pattern of silicon nitride window figure, and the transfer pattern of silicon nitride window figure is to be made up of lithographic opening district 200a, in (Development) technological process of developing; The photoresist material of lithographic opening district 200a is cleaned and removes; The photoresist material of non-photoetching district 200b is retained, and simultaneously, exposes the preparatory etched portions 210 of first silicon nitride film 110.
Referring to shown in Figure 5, utilize reactive ion etching (RIE) method, through lithographic opening district 200a etching first silicon nitride film 110, etching removes preparatory etched portions 210, and in this process, non-photoetching district 200b is retained.
In one embodiment, preferred 525 microns of the thickness of silicon wafer substrate 100 preferably is deposited into the low stress nitride silicon film that thickness is 100 nanometers with first silicon nitride film 110, second silicon nitride film 120, the thickness that photoresist material 130 is preferred 50 microns.Under these conditions; The mixed gas that utilizes gas part ratio to account for 80.5% sulfur hexafluoride (SF6) carries out dark silicon etching process, and etching loop cycle (Cycle time) is 3 times, and the etching magneticstrength is 1 special Lars (T); The etching radio frequency power is 3000 watts, and etching time is 15 minutes.Referring to shown in Figure 6, after obtaining the silicon wafer 100 that Fig. 5 explains, silicon wafer substrate 100 is carried out the dark silicon etching process under the above-mentioned parameter condition, be used for forming silicon nitride window figure grooves 220 in silicon wafer substrate 100.In this process, non-photoetching district 200b is kept by part on thickness, is used to protect silicon wafer substrate 100 by non-photoetching district 200b region covered.
Owing to etch away preparatory etched portions 210, the script of silicon wafer substrate 100 is come out by preparatory etched portions 210 region covered, on this exposed region, etches silicon nitride window figure groove 220.And, between the bottom of silicon nitride window figure groove 220 and second silicon nitride film 120, form thickness and be 20 microns silicon residual layer 230.
Referring to shown in Figure 7, the silicon wafer substrate 100 that has silicon residual layer 230 among Fig. 6 is carried out wet etching, etching removes the non-photoetching district 200b of said silicon residual layer 230 and remainder to accomplish the making of silicon nitride film window.Wet etching is to utilize 20% potassium hydroxide solution (KOH), under 80 ℃, carry out, and the etching time of wet etching is 45 minutes.
In another embodiment, preferred 525 microns of the thickness of silicon wafer substrate 100 preferably is deposited into the low stress nitride silicon film that thickness is 100 nanometers with first silicon nitride film 110, second silicon nitride film 120, the thickness that photoresist material 130 is preferred 3 microns.Under these conditions; The mixed gas that utilizes gas part ratio to account for 87.5% sulfur hexafluoride (SF6) carries out dark silicon etching process, and etching loop cycle (Cycle time) is 2 times, and the etching magneticstrength is 1 special Lars (T); The etching radio frequency power is 3500 watts, and etching time is 15 minutes.Referring to shown in Figure 8, after obtaining the silicon wafer 100 that Fig. 5 explains, in silicon wafer substrate 100, satisfy the dark silicon etching process under the above-mentioned parameter condition, attenuate silicon wafer substrate 100, form silicon nitride window figure groove 220a and silicon residual layer 230a.
Referring to shown in Figure 9, the silicon wafer substrate 100a that has silicon residual layer 230a among Fig. 8 is carried out wet etching, etching removes said silicon residual layer 230a to accomplish the making of silicon nitride film window.Wet etching is to utilize 20% potassium hydroxide solution (KOH), under 80 ℃, carry out, and the etching time of wet etching is 45 minutes.
The parameters combination of the foregoing description provided by the present invention is an optimized choice; The present invention is not limited to the above-mentioned parameter combination; For example; The thickness of silicon wafer substrate 100 is greater than 0 micron, and the deposit thickness of first silicon nitride film 110, second silicon nitride film 120 is greater than 0 nanometer, and the thickness of photoresist material 130 is 1-100 microns.The mixed gas that utilizes gas part ratio to account for the sulfur hexafluoride (SF6) of 50.0%-90.0% carries out dark silicon etching process; Etching loop cycle (Cycle time) is 0.1-30 time; The etching magneticstrength is the special Lars (T) of 0.1-10; The etching radio frequency power is 2000-4000 watt, and etching time is 1-30 minute.Wet etching is the potassium hydroxide solution (KOH) that utilizes 0-50%, under 50-90 ℃, carries out, and the etching time of wet etching is 0-60 minute.
Referring to shown in Figure 10, the process flow diagram of the making method of a kind of X ray microlens silicon nitride film window for imaging of the present invention comprises the steps:
One silicon wafer substrate is provided, and silicon wafer substrate comprises silicon wafer substrate end face and silicon wafer substrate bottom surface;
Optional, carry out chemical rightenning at the silicon wafer substrate end face, be used for forming chemical polished surface at the silicon wafer substrate end face; Carry out chemical-mechanical planarization (CMP) in the silicon wafer substrate bottom surface, be used for formation chemically machinery polished face in the silicon wafer substrate bottom surface;
Preferably, utilize Low Pressure Chemical Vapor Deposition (LPCVD), silicon wafer substrate end face deposition growing one deck first silicon nitride film, in the silicon wafer substrate bottom surface deposition growing one deck second silicon nitride film;
On first silicon nitride film, spare adhesive process to form one deck photoresist material;
Provide one comprise a silicon nitride window figure at least mask plate (Photo Mask);
Utilize mask plate (Photo Mask) on photoresist material, to carry out photoetching (Lithography) and (Development) technology of developing; On silicon nitride window figure transfer to corresponding photoresist material with it; Form photoresist material by the lithographic opening district of exposure imaging, and the non-photoetching district of unexposed development, and expose the preparatory etched portions that in subsequent handling, will be etched away of first silicon nitride film;
Through said first silicon nitride film of lithographic opening district etching, carry out reactive ion etching (RIE), be used for the preparatory etched portions that etching removes first silicon nitride film;
Carry out dark silicon etching process; Silicon wafer substrate owing to etch away on the preparatory etched portions institute area exposed and etch silicon nitride window figure groove; And, between the bottom of silicon nitride window figure groove and said second silicon nitride film, form one deck silicon residual layer;
Silicon wafer substrate to being formed with the silicon residual layer is carried out wet etching, and etching removes the silicon residual layer to accomplish the making of silicon nitride film window.
Certainly, must recognize that above-mentioned introduction is the explanation of the relevant preferred embodiment of the present invention, only otherwise depart from spirit and the scope that accompanying claims showed subsequently, the present invention also exists many modifications.
The present invention only is confined to above-mentioned explanation or details and method that accompanying drawing showed anything but.The present invention can have other embodiment, and can adopt multiple mode to implement.In addition, everybody must recognize that also employed wording and term and digest be the purpose in order to realize introducing just, only is confined to this anything but here.
Just because of this, one skilled in the art will appreciate that the present invention based on viewpoint can be used as several kinds of targets of embodiment of the present invention at any time and design other structure, method and system.So, it is essential that appended claim will be regarded as the construction that has comprised that all these are of equal value, as long as they are without departing from the spirit and scope of the present invention.
Claims (10)
1. the making method of an X ray microlens silicon nitride film window for imaging is characterized in that, may further comprise the steps:
One silicon wafer substrate is provided, and said silicon wafer substrate comprises silicon wafer substrate end face and silicon wafer substrate bottom surface;
Optional, carry out chemical rightenning at said silicon wafer substrate end face and form chemical polished surface, carry out chemical-mechanical planarization formation chemically machinery polished face in said silicon wafer substrate bottom surface;
Deposit one deck second silicon nitride film at said silicon wafer substrate end face deposition one deck first silicon nitride film, in said silicon wafer substrate bottom surface;
Spare adhesive process on said first silicon nitride film, to form one deck photoresist material;
Provide one comprise a silicon nitride window figure at least mask plate;
Utilize said mask plate to carry out photoetching process, form said photoresist material by the lithographic opening district of exposure imaging, and the non-photoetching district of unexposed development;
Through said first silicon nitride film of said lithographic opening district etching;
Carry out dark silicon etching process; Said silicon wafer substrate since said first silicon nitride film of etching institute area exposed on etch silicon nitride window figure groove; And, between the bottom of said silicon nitride window figure groove and said second silicon nitride film, form one deck silicon residual layer;
Carry out wet etching, etching removes said silicon residual layer;
Wherein, The mixed gas that utilizes gas part ratio to account for the sulfur hexafluoride of 50.0%-90.0% carries out dark silicon etching process, and the etching loop cycle is 0.1-30 time, and the etching magneticstrength is a 0.1-10 tesla; The etching radio frequency power is 2000-4000 watt, and etching time is 1-30 minute;
Wet etching is the potassium hydroxide solution that utilizes 0-50%, under 50-90 ℃, carries out, and the etching time of wet etching is 0-60 minute.
2. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 1 is characterized in that, said silicon wafer substrate is the silicon single crystal in 100 crystal orientation.
3. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 1; It is characterized in that said first silicon nitride film, second silicon nitride film all are that to utilize Low Pressure Chemical Vapor Deposition institute deposit thickness be the low stress nitride silicon film of 100 nanometers.
4. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 1 is characterized in that, said first silicon nitride film of etching utilizes reactive ion etching to realize.
5. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 1 is characterized in that, the thickness of said silicon wafer substrate is 525 microns, and said photoresist material is the polymethylmethacrylate glue of 50 micron thickness;
Wherein, said dark silicon etching process is that the mixed gas that utilizes gas part ratio to account for 80.5% sulfur hexafluoride carries out, and the etching loop cycle is that 3 times, etching magneticstrength are that 1 tesla, etching radio frequency power are that 3000 watts, etching time are 15 minutes;
And form the said silicon residual layer of 20 micron thickness.
6. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 5 is characterized in that, carries out said dark silicon etching process, at least the photoresist material in the said non-photoetching district of retained part thickness.
7. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 6 is characterized in that, said wet etching is to utilize 20% potassium hydroxide solution, under 80 ℃, carry out;
Wherein, the etching time of said wet etching is 45 minutes, is used for removing fully the photoresist material in said non-photoetching district, and removes said silicon residual layer.
8. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 1 is characterized in that, the thickness of said silicon wafer substrate is 525 microns, and said photoresist material is the polymethylmethacrylate glue of 3 micron thickness;
Wherein, said dark silicon etching process is that the mixed gas that utilizes gas part ratio to account for 87.5% sulfur hexafluoride carries out, and the etching loop cycle is that 2 times, etching magneticstrength are that 1 tesla, etching radio frequency power are that 3500 watts, etching time are 15 minutes;
And form the said silicon residual layer of 20 micron thickness.
9. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 8 is characterized in that, carries out said dark silicon etching process, etches away the photoresist material that is positioned at said non-photoetching district fully;
Simultaneously, etch away said first silicon nitride film fully, and said silicon wafer substrate is carried out partial etching be used for the reduced thickness to 200 of said silicon wafer substrate micron.
10. the making method of X ray microlens silicon nitride film window for imaging as claimed in claim 9 is characterized in that, said wet etching is to utilize 20% potassium hydroxide solution, under 80 ℃, carry out;
Wherein, the etching time of said wet etching is 45 minutes, is used for removing fully said silicon residual layer.
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| CN103760179B (en) * | 2014-01-22 | 2016-05-11 | 杭州一二八医院 | Cell micro imaging method, image processing method and imaging analysis system |
| CN104217929A (en) * | 2014-10-11 | 2014-12-17 | 王金 | Epitaxial wafer and processing method thereof |
| CN108950513B (en) * | 2018-07-25 | 2021-02-05 | 深圳市硅光半导体科技有限公司 | Method for manufacturing silicon-containing component |
| CN112271011A (en) * | 2020-10-23 | 2021-01-26 | 山东科技大学 | Packaging method and system of X-ray zone plate |
| CN113782245B (en) * | 2021-08-17 | 2023-09-01 | 浙江工业大学 | Atomic magneto-optical trap chip and processing method |
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| US4662984A (en) * | 1984-08-30 | 1987-05-05 | Kabushiki Kaisha Toshiba | Method of manufacturing shadow mask |
| CN88102931A (en) * | 1987-05-19 | 1988-12-14 | 株式会社东芝 | Make the method for shadow mask |
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| JPH04152297A (en) * | 1990-10-16 | 1992-05-26 | Nikon Corp | X-ray diffraction element |
| JPH06252035A (en) * | 1993-02-23 | 1994-09-09 | Toppan Printing Co Ltd | Manufacture of x-ray mask |
| JP3731251B2 (en) * | 1996-06-27 | 2006-01-05 | 株式会社ニコン | Manufacturing method of multilayer X-ray half mirror |
| JP2002096333A (en) * | 2000-09-22 | 2002-04-02 | Ntt Advanced Technology Corp | Mold and its manufacturing method |
| JP2002168998A (en) * | 2000-12-04 | 2002-06-14 | Nikon Corp | Method of manufacturing metal membrane, and metal filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4662984A (en) * | 1984-08-30 | 1987-05-05 | Kabushiki Kaisha Toshiba | Method of manufacturing shadow mask |
| CN88102931A (en) * | 1987-05-19 | 1988-12-14 | 株式会社东芝 | Make the method for shadow mask |
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| JP特开2002-168998A 2002.06.14 |
| JP特开2002-96333A 2002.04.02 |
| JP特开平10-10305A 1998.01.16 |
| JP特开平4-152297A 1992.05.26 |
| JP特开平6-252035A 1994.09.09 |
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