CN101838844A - Diamond medical devices - Google Patents

Abstract

In the single crystal diamond that forms with CVD, that uses mask is used for the structure that optical application, the manufacturing of nano-electromechanical device and medicine equipment are made with controlled ion injection and annealing or etching manufacturing.Use ion implantation one or more atomic species to be inputed in the diamond growth surface below, form input horizon with predetermined depth place below diamond growth surface with atom peak concentration.Under suitable condition, synthetics is heated in non-oxidizable environment, separate so that be right after the diamond of input horizon.Also can in releasing structure, use further ion implantation so that it is aligned as required or be crooked.Also can make the diamond lattic structure of conduction by boron-doping.

Description

Diamond medical devices

The application be the applying date be January 11 in 2006 day, be called the dividing an application of No. 200680007879.6 application for a patent for invention of " diamond medical devices ".

Related application

The title that the application requires to submit on January 11st, 2005 is " diamond medical devices (Diamond Medical Devices) ", sequence number 60/643, the right of 390 U.S. Provisional Application, this provisional application full content is incorporated in this specification sheets by reference at this.The title that the application also requires to submit on July 11st, 2005 is " structure (Structures Formed in Diamond) that forms in the diamond ", sequence number 11/178, the right of priority of 623 U.S. Patent application, this patent application full content is incorporated in this specification sheets by reference at this.The title that the application also requires to submit on February 11st, 2005 is " diamond structure separation (Diamond Structure Separation) ", sequence number 11/056, the right of priority of 338 U.S. Patent application, this patent application full content is incorporated in this specification sheets by reference at this.

Background technology

Diamond shows and the living tissue excellent biological compatibility.At present, be used for clinical application, diamond does not demonstrate carinogenicity or toxicity; And it demonstrates biologically inert under the large volume form.Artificially synthesizing diamond in many ways.But it is a kind of unmanageable material, and needs new technology to be formed for handling the structure of biomaterial.

Modern semiconductors utilizes the various units of mixing usually to change their electric property generally based on silicon.For example, owing in the silicon that has only the tetravalence electronics, do not have the pentavalent electronics, so Doping Phosphorus has produced excess electron and makes it become n N-type semiconductorN material in silicon.Similarly, owing to have only the boron of three valence electrons to lack an electronics than silicon, doped with boron can produce the p type silicon that has superfluous " hole " or lack electronics in silicon.

When n type silicon and p type silicon contacted with each other, electric current flowed than the easier knot that passes from other direction from a direction.The more complicated structure that can make up n type and p section bar material forms various types of transistors, unicircuit and other similar devices.

But the proper property of employed semiconductor material has limited the performance of some semiconducter device.For example, the speed of treater is limited by the performance number that the transistor of forming this processor integrated circuit and other devices are consumed, if turn round too soon, this processor integrated circuit can melt fully so.Owing to, increase at the heat of determining the area internal consumption along with the transistor of a certain amount of power of more consumption is packaged in the littler area, thus size reduce also be restricted.Because the physical size of single transistor or diode generally is very little, even the simple Devices the diode that uses in high frequency, high power applications also is subjected to the puzzlement of Power Limitation.

Can provide the semiconducter device of bigger consumed power and Geng Gao density of semiconductor devices to provide high-performance more, littler electron device is desirable.

Summary of the invention

In the single crystal diamond that forms with CVD, use mask and controlled ion injection and annealing or etching manufacturing to be used for the structure that optical application, the manufacturing of nano-electromechanical device and medicine equipment are made.Use ion implantation one or more atomic species to be inputed in the diamond growth surface below, form input horizon with predetermined depth place below diamond growth surface with atom peak concentration.Under suitable condition, synthetics is heated in non-oxidizable environment, separate so that be right after the diamond of input horizon.Also can in releasing structure, use further ion implantation so that they are aligned as required or be crooked.Also can make the diamond lattic structure of conduction by boron-doping.

In one embodiment, form the nano level passage by in diamond, injecting ion to the position that needs the nano level passage.Can use mask to control the width and the length of this injection, can use selected injecting power level to control the degree of depth of injection.The heating diamond makes in injection place or near generation separation this injection place.This separation can be with the nano level passage that acts on conveyance fluid, perhaps as the low-refraction part of waveguide.

When producing separation, can determine the size and dimension of other injections, to form calibrator, spectral filter or light deflector with heating.Use the annular of about 500nm in one embodiment.Use a series of masks and inject the formation that the degree of depth can provide many different physical constructions, such as those structures that can in silicon, form.Can grow along infusion by other synthetic diamond layers that one or more layers diamond layer constitutes.

In yet another embodiment, by the device that the material except that diamond forms, for example the device based on silicon or germanium is coated with the CVD diamond, thereby anti-oxidation high biocompatible device is provided.

Description of drawings

Fig. 1 is the adamantine block representation with Nv center according to exemplary.

Fig. 2 shows the adamantine side cross-sectional synoptic diagram according to the ion implantation technology of the mask of exemplary.

Fig. 3 is the adamantine vertical view among Fig. 2, shows the ion implantation mask that is used for according to exemplary.

Fig. 4 is according to the side cross-sectional synoptic diagram of the diamond among Fig. 2 of exemplary after ion implantation and heating.

Fig. 5 is adamantine side cross-sectional synoptic diagram, shows the ion implantation technology according to the mask that is used to form socle girder of exemplary.

Fig. 6 is the vertical view that is used to form the ion implantation mask of socle girder according to exemplary.

Fig. 7 is the side cross-sectional synoptic diagram according to the socle girder of the release of exemplary.

Fig. 8 is the adamantine side cross-sectional synoptic diagram according to the mask that is used to form optical texture of exemplary.

Fig. 9 is the adamantine top cross sectional view among Fig. 8, shows the optical texture that forms according to exemplary.

Figure 10 is the vertical view according to the drug efflux pump of exemplary.

Figure 11 is the side cross-sectional, view according to the multipolar capillary system of exemplary.

Figure 12 is the block cross section view that applies the adamantine optics of CVD according to exemplary.

Figure 13 is the vertical view according to the porous C VD diamond thin of exemplary.

Figure 14 is the block diagram representation that applies the adamantine structure of CVD.

Figure 15 has shown the diamond seed of the boron-doping with hydrogen ion implantation layer consistent with exemplary of the present invention.

Figure 16 has shown the diamond seed of the adamantine boron-doping with boron-doping of growing up to consistent with exemplary of the present invention.

Figure 17 has shown the have diamond seed of at hydrogen injecting the energy level isolating adamantine boron-doping that grow up to consistent with exemplary of the present invention.

Figure 18 has shown the schottky diode that the diamond seed by have the boron-doping that grow up to consistent with exemplary of the present invention forms.

Figure 19 has shown the method for the diamond semiconductor that be used to form boron-doping consistent with exemplary of the present invention.

Figure 20 has shown the unicircuit in the diamond semiconductor zone with first and second boron-dopings consistent with exemplary of the present invention.

Figure 21 has shown the electron device of the diamond semiconductor that utilize boron-doping consistent with exemplary of the present invention.

Embodiment

In the following description with reference to the accompanying drawing of forming this specification sheets part, and the specific embodiments that can implement by diagram therein illustrates.These embodiments are enough explained, so that those of ordinary skills can implement the present invention; And will be appreciated that and can use the other technologies scheme, and carry out on the structure without departing from the present invention, in logic with circuit on variation.Therefore, following description does not also have a limiting sense, and scope of the present invention is defined by the claims.

The technical ability of making the Nv center in the single crystal diamond has in a controlled manner been described by the application's first part.Described various can be in the single crystal diamond ion implantation technology of manufacturing structure.As described, so can use these technologies to come manufacturing structure under other environment in the medicine equipment part.Further described diamond doped various semi-conductors and the conductivity of obtaining of relevant single crystal, this can use with nanometer of constructing in diamond and micro mechanical device.

N-V center in the diamond can be made in a controlled manner.In one embodiment, utilize the CVD technology that comprises nitrogen in the process of growth to form the single crystal diamond, the N-V center is removed in annealing then.Be formed centrally the adamantine thin layer of single crystal then among the N-V by controlled amounts.This N-V center is formed for the quantum bit in the circuit.

Qubit devices forms in having the diamond of high controlled purity.Can make the N-V center of high controlled amounts, N-V be isolated from each other and with other elements with magnetic spin, isolated such as N-V0, Ns and 13C (carbon 13).In one embodiment, utilize single isolated N-V center from single atom acquired information rather than from the atomic group acquired information.In another embodiment, make that the contiguous 13C in N-V center may be desirable.In yet another embodiment, because defective can cause the shorter spin life-span, and nitrogen is easy to segregation at the fault location such as dislocation, wherein this dislocation exerts an influence to higher concentrated effect and the interaction of following between contiguous spin and the reduction in life-span, so diamond has very high crvstal perfection.

In one embodiment, light can enter and leave this diamond host material in a controlled manner.When the quantum bit emission light time, will on spherical surface, launch this light, and the light intensity in the arbitrfary point is very little and be difficult to detection.Quantum bit is comprised in the optical waveguide, and this optical waveguide is trapped in light and guide on the direction of minimum quantity.Because diamond has very high specific refractory power (being 2.4 in the visible-range), it is used for this kind waveguide is ideal.The thin layer of diamond that contacts with air or vacuum provides this kind waveguide on both sides.Diamond has than the obvious higher specific refractory power of air, makes to be limited in internal reflection and by diamond waveguide by the wall of diamond waveguide along the light beam of duct propagation.Utilize quantum bit to be placed in the diamond waveguide, most of light that quantum bit is launched will transmit and be easy to be collected and detect along this waveguide.Also other delivery forms be can use, plasma waveguide or slotted waveguide for example utilized.In yet another embodiment, use fine wire to come to draw light from quantum bit.This light is propagated on the outside wiry in the diamond coating layer.

A kind of method that is used to construct qubit devices comprises: use HPHT method growing single-crystal, add predetermined amount, all will be the nitrogen-atoms of Ns, thereby the irradiation diamond generates the N-V center to produce carbon room and annealing so that the carbon room is diffused in the nitrogen-atoms.This method can cause causing the radiation of lens lesion largely, thereby reduces the quantum bit life-span.

The another kind of method of making the N-V center in the HPHT diamond comprises: remove all nitrogen with the getter of titanium or aluminium from diamond and come growing diamond, and by the ion implantation of fixed point nitrogen is injected diamond subsequently.Perhaps, this method is not suitable for producing the diamond wafer of the large volume that is applicable to that device is made very much.

Fig. 1 has N-V according to exemplary ^-The block representation of the diamond lattice 100 at center 110.The N-V center with different state of charge is also represented at center 110.As mentioned above, this N-V ^-Center 110 is the nitrogen 115 in the occupy-place in the diamond, the contiguous carbon of this occupy-place room 120.In Fig. 1, this N-V ^- Center 110 isolates with other N-V centers, so that the spin of other centers and other structures does not influence this isolated N-V ^-The center, thus quantum bit formed.

N-V in the diamond ^-Center 110 has makes it meet some characteristics based on the device of quantum bit.It can use lower powered microwave to aspirate.It also can be easily detected (with the emission of 675 nano wave lengths).This kind N-V in the diamond ^-The center has the long lifetime (60 to 500 microsecond) and ambient operation.Diamond also has high optical clarity and high light refractive index, can construct optical waveguide and other optical textures.

The method at a kind of N-V of manufacturing center comprises the diamond that uses CVD to grow up to.The CVD diamond can grow bigger size, has as high controlled purity seen in (referring to United States Patent (USP) the 6th, 582, No. 513) and the floor with controlled purity, thickness and performance.Can be with high or low nitrogen concentration, have 13C or do not have the layer CVD diamond of growing of 13C.Can control the formation at N-V center by several modes.

The CVD diamond is at N-V ^-, N-V ⁰With grow under all stable condition of Ns.In addition, the ratio of these states can change according to the thermal treatment after growth conditions, concentration and the growth.And, can not have growth substrates under all states of nitrogen basically yet, and growing then and have only the diamond thin of expection nitrogen level.Because the quantity of nitrogen-atoms is the function of concentration and thickness in the film, so N-V ^-The center can isolate with other all centers.In other words,, and make diamond thin extremely thin, can guarantee to form considerably less N-V center so, thereby and isolate mutually if in the diamond that the CVD of given volume grows up to, form the concentration at the N-V center of dose known amounts.

In another embodiment, by be extracted in the source of the gas 13C or by increasing the 13C energy level, be used for the 13C that the carbon source of the CVD growth of film has preset level.In one embodiment, need about 2 microns gap to guarantee N-V ^-Interaction not between center and other N center.This estimation has 10ppb approximately, and this has obtained proof.In addition, can generate the diamond layer of unique nominal purity, high temperature annealing is to change into Ns with all N-V centers then.Because Ns is at N-V ^-Wavelength does not have optical signal, and this has removed irrelevant signal arbitrarily from the assorted N-V atom that looses.It should be understood that and can cultivate many layers, these layers alternately, have the three-dimensional structure of isolated N-V in adjacent layers with acquisition between the N-V center of highly purified and specific quantity.Each layer can be designed to waveguide as described below, and has multiple and function that separate.

In each above-mentioned embodiment, the N-V center can at random be placed in the crystalline volume, still at the run duration of device, can easily be found and mark for detection.

In another embodiment, can use dissimilar diamonds, such as natural, ore deposit gold mining hard rock, diamond or other diamonds that the diamond that high temperature, high pressure are made, CVD form.Can generate the N-V center of predetermined density subsequently by injection, and then inject with these diamond annealing to destroy the N-V center then to form waveguide.

The alternate method has been used the very pure bulky crystal that is with or without predetermined isotopic purity film, to destroy all remaining N-V centers, injects single isolated N-V center at preposition with thermal treatment then.And then the adamantine protective layer of high purity of on layer, growing.

Waveguide can be near being formed centrally among the N-V and being connected with its optics.In one embodiment, inject hydrogen in the band mode in diamond, by this structure being heat-treated to produce cavity, this cavity separates the diamond band with the diamond of bottom subsequently.This diamond band basically by air around, and as the optical waveguide of signal being introduced and drawing diamond lattic structure.It provides the input and output of the optical signalling of high degree of isolation, and can carry out multichannel input and output on single diamond chip.In addition, can on an optical chip, provide multiple function, such as amplifier, storage and calculating.The injection of multiple energy can form a plurality of bands, forms layer separated from one another on the degree of depth simultaneously, thereby produces three-dimensional, optoisolated quantum bit structure.Owing to can utilize most volume, these structures can significantly reduce these size of devices.Also can form slotted waveguide.

It should be noted, under the situation of the waveguide of split tunnel, make waveguide rise and reduction, can change the characteristic of waveguide at the luminous point place or along its length by using heat and voltage cycle.This is a parasitic fully device (attached device) in itself.This can or can be used as the switch that light is moved to another passage as the switch that opens or closes light.In one embodiment, quantum bit, photoswitch and MEMS technology and attendant applications thereof are incorporated in the same chip.Use (patterned) of mask or other compositions to inject and lift-off technology makes it possible to construct a series of waveguiding structure, for example sheet, tabular, wire, dish shape and all can be as the multiple shapes in these shapes of modulation in photoelectron and MEMS device and conversion.By the degree of approach (proximity) of these waveguides and the design of shape, can construct switch or the mixing tank often opening or often close.

Also can form diamond qubits with other semi-conductors.Diamond can be incorporated on other semi-conductors, for example silicon, gallium arsenide, gan, silicon carbide or III-IV alloy.Semi-conductor can grow on the diamond substrate.Diamond to other semi-conductive connections will make such as laser apparatus, detector and corresponding circuit can be directly and diamond QBIT integrated, to provide arrival and from the input and output of routine source, device and system.This will be provided for conventional computer and following basis based on the interconnected optical bus of the more speed in the computer of QBIT.In fact by described technology of combination and method, a whole set of new integrated quantum bit-semiconducter device (QSD) will be possible.

Fig. 2 is adamantine side cross-sectional synoptic diagram, shows the ion implantation technology for the mask of the waveguide that forms the quantum bit that approaches to form as mentioned above according to exemplary.In one embodiment, this quantum bit is isolated quantum bit, and this quantum bit position makes thus that as the liner that forms waveguide quantum is positioned in the waveguide.In another embodiment, in the waveguide that forms already, form this quantum bit.

In one embodiment, diamond substrate 210 is coated with one deck mask 215.This mask 215 is made by the material that can enough sieve out the ion 220 that injects with preset level.This mask can be taked many different shapes, and 310 places in vertical view 3 show a kind of in this shape.In this embodiment, this mask is long, thin orthogonal shape, forms long thin infusion 225 at the predetermined depth place.

Fig. 4 is at the ion implantation and heating side cross-sectional synoptic diagram with the diamond 210 among formation Fig. 2 after the space 410 diamond 210 in.Space 410 provides in the region of low refractive index with a side of the diamond band shown in 420.Be actually the top of diamond 210 at the opposite side of this diamond band 420, this side can be exposed in the air, compares with the specific refractory power of diamond band 420 also to have low specific refractory power.Therefore, diamond band 420 forms waveguide.Quantum bit 430 forms in diamond band 420, and this band provides a kind of mechanism to catch light and light is provided to quantum bit, to detect and to cause the variation of quantum bit.Clearly, diamond band 420 can form with different shapes, light is transmitted to predetermined light source 440 and photodetector 450, this photodetector can further be connected to treatment circuit separately, and this treatment circuit can be on diamond substrate, in the diamond or form outside the diamond.In different embodiments, light source 440 and photodetector 450 also can be in diamond substrate, on the substrate or outside diamond substrate.Can form optical fiber connection or opticcoupler imports light into waveguide band 420 or derives waveguide band 420.

In one embodiment, use the ion implantation of composition with one or more atomic species input diamond growth surface belows, to be formed on the input horizon with peak concentration at certain depth place, diamond growth surface below.Under suitable condition, this synthetics is heated in non-oxidizable environment, so that synthetic diamond structure is separated.

This kind non-oxidizing atmosphere generally includes the atmosphere that any oxygen containing concentration is not enough to oxidizing reaction.The example of this kind atmosphere comprises inert (for example helium, neon, argon etc.) and other oxygen-free gases (for example hydrogen, nitrogen etc.).Be used to provide the environment of these atmosphere to generally include plasma body, vacuum or the like.

In certain embodiments of the invention, before the ion implantation stage or in the ion implantation while in stage, can carry out multiple initial step.Such step comprises the selection substrate.For example, when growing single-crystal CVD diamond, this substrate can be a single-crystal diamond.

In case selected substrate, can determine and alternatively at least one main surface of preprocessing substrate be used for ion implantation.The preprocessing of diamond surface can comprise the method that is used to influence surperficial chemistry and/or physics formation of any suitable, for example by using conventional finishing method to polish.This kind preprocessing can be finished before ion implantation.Usually, ion injects with the fixed distance and the mode of passing the uniform flux of diamond growth surface, so that the surface profile that the configuration of injected material layer will the self-replication substrate.And generally will have corresponding influence to the profile of infusion in the lip-deep any defective of the injection of substrate, comprise influence to the configuration of predetermined peak atomic shell.Thereby if diamond is polished, in fact these structures can be polished basically.The preprocessing of substrate may be important for these defectives of preliminary removal.In addition, in certain embodiments, for ion implantation the surface is cleaned up hill and dale, for example used solvent or other method known in the art, these methods comprise plasma etching, gas phase etching or the like.Polishing damage may produce the N-V center of not expecting.Further the adamantine surface of etching polishing is damaged and the N-V center to remove these.

Usually under the condition of high vacuum, high-voltage and relative low feam column, carry out ion implantation.As known in the art, the ion implantation process that generally includes the ionized atom kind is quickened these materials subsequently in electric field, and that will speed up, Ionized material directive substrate.Along with the acceleration of movement velocity, this material penetrates the outside surface of substrate usually and stops in the zone shown in 225 places among Fig. 2 in substrate.

This zone is in the input horizon of substrate.In one embodiment, this material quickens towards substrate with normal direction or perpendicular to the angle on surface usually.But this material equally also can quicken towards substrate with various angles.For given material, realize the degree of depth of injection by adjusting electric field usually.Usually, when increasing the voltage of electric field, the energy of this material will be increased, and this can finally cause this material to enter the darker injection of substrate.Can be contemplated that fully that substrate can be any one in the various crystal shapes.For example, substrate can be a kind of in any prespecified geometric, and these geometrical shapies comprise cubes, cone, prism, pyramid, sphenoid or other geometrical shape, and the various truncated cone.

The upper surface that material penetrates substrate usually arrives a certain zone always, such as the zone in the substrate 225.The peak concentration of material is at a certain degree of depth place that is referred to as end of range depth (end of rangedepth) usually.Though only locate to show material, should be appreciated that so doing is for simplicity in a degree of depth (end of range depth).After ion implantation, material is distributed near the zone at end-of-range place usually fully or is distributed in the zone of end-of-range.

Before ion implantation beginning, must select the material that will inject.When selecting material, need consider many variable factors, for example cost and effective rate of utilization, and the material as described below degree of injury that can reckon with to substrate lattice.

During ion implantation, by material (Ionized atom) being injected the lattice of substrate, the injection part of lattice expands or expansion usually.The such overdistension of lattice can cause the strain in the input horizon usually.As a result, over-drastic strain meeting causes damage to input horizon.This damage is representative with dislocation in input horizon and cracking usually.These dislocations can produce one usually to the disadvantageous outer substrate surface of growth high quality diamond (for example have the diamond that does not have defective or dislocation by the CVD growth, perhaps have the diamond of the defective or the dislocation of insignificant quantity).But, can control the mode of lattice dilation in many ways, perhaps in fact can rely on several different methods to control.

A kind of method comprises selects the suitable material that is used to inject.In certain embodiments of the invention, use conventional ion implantation technique in diamond substrate, to inject hydrogen ion.Because the covalent radius of hydrogen is little, only produces a spot of lattice dilation in input horizon.Therefore, has only very little strain (and damage) in the input horizon.Usually, along with the covalent radius increase of the material that is injected, the possibility that can produce excellent surface (surface that for example has limited defective or dislocation) reduces.

Usually, if material be suitable for after this making input horizon part can with substrate separation, it is ion implantation to use arbitrary substance to be used in technology of the present invention.Therefore, thus so select material to make it can be suitable for being injected in the substrate.The ion of these materials comprises, even not every words so also are most atomic elements.In certain embodiments of the invention, substrate also is used for the man-made diamond of growing thereon.Therefore, it is interior so that can separate that material preferably can be suitable for being injected into substrate, and can form good growth surface aptly on substrate, the fine man-made diamond of can growing on this surface.Therefore, select material to make it possible to be suitable for being injected in the substrate and can desirably damage substrate.Undersized normally preferred to middle-sized material (having little) to middle-sized covalent radius.Example comprises the atomic species such as helium, lithium, boron, carbon, oxygen, p and s.But this implementation of processes scheme also can comprise large-sized material (having large-sized covalent radius).In these embodiments, considered to influence other parameters that material injects, for example dosages of substance and species energy are injected degree of injury to substrate lattice so that limit large-sized material.

The dosage that the extent of lattice damage of injecting part can be passed through the material that injected limits, and this dosage is defined as being injected into the surface density (atom/cm of the atom in the substrate ²).For example, if material uses high dosage to inject, material will cause than using low dosage to inject bigger damage substrate usually so.When material (Ionized atom) passed substrate and advances, it was maximum entering the damage that substrate causes substrate lattice near material end-of-range (being referred to as " the scope damage is terminal " usually).

Secondly, the degree of injury at end-of-range place is the function of the total dose of this level.Yet, can make that isolating ability also is the function of total dose in diamond crystal.For specific embodiment, dosage level is crossed low will will causing the over-drastic damage and hang down the diamond film of grade yet dosage level is too high less than separating.In certain embodiments, dosage setting is from about 1x10 ¹⁴Atom/cm ²To about 1x10 ¹⁰Atom/cm ²Scope in, perhaps more preferably, be set in from about 1x10 ¹⁵Atom/cm ²To about 1x10 ¹⁸Atom/cm ²Scope in.When injecting large-sized material, for limit lattice damage, usually preferably range of choice than the dosage on the low side.On the contrary, undersized during to middle-sized material when injecting, any dosage in scope all suits usually.

In addition, can control the extent of lattice damage of diamond growth surface by the voltage that change is used for ion implantation electric field.When increasing the voltage of electric field, the energy of material also increases, and finally can cause material deeper to be injected in the substrate.Secondly, energy level can be selected, thereby the material of peak concentration can be in substrate, injected near a certain injection degree of depth (end of range depth) for specific material.This degree of depth can be from 500 dusts to 20, any number in the 000 dust scope.Though the end of range depth that the energy by reducing material can restrictive substance had better not exceedingly limit this energy.

In certain embodiments of the invention, energy level is set at from about 10KeV to about 10, and in the scope of 000KeV, and in another embodiment, energy level is set in the scope from about 50KeV to about 500KeV.When injecting large-sized material,, can expect to select the species energy on the higher-end of this scope in order to limit the lattice damage of substrate.Like this, inject large-sized material to it, thereby attempt to avoid any lattice damage of diamond growth surface from distance diamond growth surface farther place.On the contrary, undersized during to middle-sized material when injecting, this method provides in the more freedom of selecting on the matter energy.

In injection process, the dosages of substance rate can influence substrate temperature.If dose rate is too high, can produce the deleterious greying in input horizon zone.In some embodiments of the present invention, this dose rate is set at from about 0.05 microampere/cm ²To about 100 milliampere(mA)s/cm ²Scope in, in other embodiments, this dose rate is set at from about 0.1 microampere/cm ²To about 500 microamperes/cm ²Scope in.

In one embodiment, inject, heat gap then with the different energy levels that produce substrate at a plurality of energy levels.By 150,155 and the energy level of 160KeV inject H ₂, an example provides three kinds of such gaps.This can provide the tertiary structure with the corresponding isolated N-V of potential center, for example waveguide.

Consider this specification sheets, one of ordinary skill in the art will appreciate that related substance injects and the particular value of employed energy if provide, can determine the end of range depth of material so.This calculating is referred to as TRIM (Transport of Ions in Matter) usually and calculates.Referring to the people such as J.P.Biersack of Nucl.Instr.Meth. 174-257 page or leaf (1980) publication " A Monte Carlo Computer Program for the Transport ofEnergetic Ions in Amorphous Targets ", the instruction of this article is incorporated herein by reference.Generally also can be referring to people's such as J.F.Ziegler " In the Stopping andRange of Ions in Matter ", Pergamon Press, N.Y., the 1st volume (1985), the instruction of this article is incorporated herein by reference.Table 1 has been listed given diamond seeds as substrate, the proximate end of range depth of the various materials of different energy levels.No matter whether diamond seeds is HPHT, CVD or natural diamond, it is identical that the end of range depth of material keeps usually.Go out as shown, along with the energy level such as the material of hydrogen improves, its end of range depth also improves.Calculate for the energy level of the material that comprises boron and carbon at about 200KeV, increase with the atomic radius of proof along with material, corresponding end of range depth reduces.In addition, it should be noted that opposite with hydrogen, when using carbon as injected material, in order to obtain similar end of range depth (for example, from 1900 dusts to 2000 dusts), energy level must increase by four times.

Table 1

The injection degree of depth as atom that injects and injection energy function

Inject energy

Under non-oxidizing atmosphere, provide thermal treatment for the diamond synthetics.These processing can provide by the method for any suitable, comprise all any method known in the art of radiation, conduction or convective sources.Usually, heat treated temperature range preferably set from about 1100 ℃ to about 1800 ℃ scope, more preferably be set in about 1100 ℃ to about 1500 ℃ scope.The suitable atmosphere and the combination of temperature levels provide the ecotopia that makes man-made diamond and input horizon part natural separation.

Fig. 5 is adamantine side cross-sectional synoptic diagram, shows the masked ion injection technology that is used to form socle girder according to exemplary.In this embodiment, use first mask to form the overall orthogonal zone of the size that will limit cavity at last, will be released with free movement at this cavity internal cantilever beam.Understandable equally, can use other shapes except that rectangle.According to needed size of component, injecting the degree of depth can change, so that the side that the ion of sufficient density is injected into socle girder whole zone, below and is injected into socle girder, in case after allowing socle girder to be released motion, can move fully.Therefore, mask extends the edge of socle girder at least slightly and discharges end.

After the injection ion forms the bottom surface of cavity, use new mask as shown in Figure 6, this Fig. 6 is the schematic top plan view according to the ion implantation mask that is used to form socle girder 600 of exemplary.When limiting socle girder self shape with protuberance 610, this mask allows to arrive the side of socle girder and the injection of crossing the release end of socle girder.The injection energy level that uses together with this mask is designed to the ion implantation side and the release to socle girder of sufficient density is held.This injection can change the injection degree of depth of the cavity that the below limits from the diamond substrate surface to socle girder.Therefore, as shown in Figure 7, heating has discharged socle girder under non-oxidizable environment, and wherein Fig. 7 is the side cross-sectional synoptic diagram according to the socle girder 710 of the release of exemplary.Alternatively, can use carbon injection and heat of oxidation etching, electrolysis and oxidation acid etching to discharge at the edge.

In one embodiment, socle girder 710 trends towards being bent upwards when being released.Before discharging socle girder or can be provided at other injections of higher energy level afterwards.These injections according to the degree of depth and density, will begin to align socle girder by compressive surfaces; And if continue to inject, can in fact make socle girder be bent downwardly.

As what can see from the formation of socle girder 710, by using one or more layers mask, and the degree of depth that changes multiple injection removes predetermined material, can make many other three-dimensional structures.Can further in acid solution, clean these structures, to remove the unwanted remaining diamond that injects.These structures can be used for many different application, comprise NEM and MEM device with common application.These devices can be as transmitter and other mechanical devices with multiple application except that qubit devices, for example medicine equipments.

Fig. 8 is the adamantine side cross-sectional synoptic diagram according to the mask that is used to form optical texture of exemplary.In one embodiment, mask 800 comprises one or more array of circular openings 810.As shown in Figure 9, the injection that obtains in predetermined depth is heated, form the space 910 of a series of dish shapes, wherein Fig. 9 is the adamantine cross sectional view of overlooking among Fig. 8.In one embodiment, the space 910 of dish shape can be used as pump or light deflector.When being shaped near diamond surface, can slightly bubble in adamantine surface.These are steeped oneself-meeting and cause the optical edge effect, comprise color change.In one embodiment, the diameter of this dish approximately is 500nm.Can easily form other shape and size.

In one embodiment, can use more mask and inject the diamond that fully discharges each top, dish shape space, to generate small lens like structures.These structures can have and inject the expection thickness that energy level interrelates.In one embodiment, lens are that about 50um is thick, form calibrator or spectral filter.It should be noted, discharge the lens, can also use laser and other to discharge the method for lens except varying depth injects and heats.In certain embodiments, employing is less than the thickness of 1um.This thickness also can be the function of required operative wavelength that comprises the optics of this kind structure.

Medical applications

Diamond shows and the living tissue excellent biological compatibility.At present, be used for clinical application, diamond does not demonstrate carinogenicity or toxicity; And it demonstrates biologically inert under the large volume form.Therefore, it is can be attached to medicine equipment, shaping apparatus, instrument, instrument, transmitter and other to be used to comprise structural very desirable material in the human living tissue.These healthcare structure can use the technology of above determining directly to make with the CVD diamond, are perhaps made by the material of present use, apply the CVD diamond then the enhanced biocompatibility is provided.This coating can be by applying the surface of expection with nanocrystal diamond, perhaps apply whole surface and on these surfaces growth CVD thin layer of diamond be coated with.These diamond layers can be made conduction by the hotchpotch that comprises needs, perhaps make nonconductingly according to need.

In one embodiment, the CVD diamond coatings of 50nm is enough to the performance that provides required.These performances comprise biocompatibility, and the ability that suppresses their coated structure oxidations.In one approach, using nanocrystal diamond is needed structure kind crystal seed.Nanocrystal diamond can have been bought, and can be suspended in the ethanol to be applied in the structure.This structure can be soaked in the ethanol, makes ethanol evaporation then, structurally stays the diamond seeds of predetermined amount.Also can use the adhesive carrier that is used for diamond seeds, photoresist material for example, this adhesive carrier can be evaporated then.The CVD diamond layer can be formed by this crystal seed, for example with multiple processing temperature from seeded growth, according to the heat budget of structure or their thermotolerance, this processing temperature for example is in 500 to 1000 ℃ scope, or about 200 ℃.Growth CVD diamond on crystal seed utilizes the CVD diamond of this growth can be enough to the required part of covered structure.Can carry out repeatedly such coating and cover entire structure.

Some application comprises surgical scalpels and drill bit.The CVD diamond coatings provides the enhanced wearing quality.For drill bit, the drill bit of tooth, nerve or orthopedic type for example, CVD diamond lattic structure or coating can provide the enhanced wearing quality, and can realize the sharpness of expecting in addition and do not increase the abrasion of drill bit.More blunt drill bit can have the estimated performance that the control of enhanced drilling speed is provided.

In other was used, orthopedic instrument can have improved performance.The ball-and-socket type or the enclosed construction that constitute artificial knee, hip, shoulder and elbow joint can optionally be used the CVD coated with CVD (chemical vapor deposition) diamond, perhaps use the CVD diamond fabrication in certain embodiments fully.Other devices, for example spinal disc alternative, screw, sheet material, node or the like can be made with diamond, perhaps use the CVD coated with CVD (chemical vapor deposition) diamond.

Comprise conduit system for application, all can have the life-span of growth such as the spinner blade that is used to clear up artery, support and heater valve etc. owing to having reduced wear rate accordingly with the cardiovascular aspect of the device of CVD diamond fabrication or covering.

Nano medical applications comprises uses the CVD diamond to encase device, and this device is used to carry the technology of protein, recombinant protein and/or retrovirus, inner virus (endovirus) and plasmid.

The injection technology of above-mentioned mask can be used to make many different relevant apparatuses of medical treatment.Utilize above-mentioned implantttion technique, can make drug delivery device, this drug delivery device can be implanted in the organism alive.Simplified block diagram at 1000 places in Figure 10 shows an example of this apparatus.The holder 1010 that comprises medicine is made by the substrate material that diamond, silicon or other use the method that adapts with respective material to make.When making, can use many basic photoetching techniques to form this structure by silicon.First pipe or the conduit 1015 that can use sacrifice layer to form holder 1010 and be connected to pump 1020, this pump 1020 are structures of little blister and have the ability that its volume is controlled according to the driving of expection.Pump 1020 is also connected to output tube or conduit 1025, to spray fluid.

Pump 1020 can be by applying voltage or by using piezoelectric mechanically to drive, can controllably compressing and be out of shape so that steep.This has formed nanometer fluid valving or pump.Can come silicon-coating apparatus 1000 with the CVD diamond then as mentioned above.Can use the adamantine two kinds of application of CVD, for second kind of application, this apparatus overturn applies the bottom surface of this apparatus.

When apparatus 1000 is made by the diamond such as the CVD diamond, can use multi-form ion implantation and annealing to form structure.Small construction such as pipe 1015 and 1025, can form by hydrogen ion injection and annealing.In other embodiments, bigger structure, for example holder 1010 and pump configuration 1020 can form by the injection of the heavy ion kind such as having multi-level carbon if desired.Such injection may form graphite in diamond, this graphite can be by utilizing oxygenizement and utilizing the sulphur nitric acid of corrosion graphite linings to etch away.Can introduce acid by pipe 1015 and 1025.In one embodiment, pipe 1015 and 1025 is shaped as wall scroll successive pipe, provides to be used for the passage of etching holder 1010 subsequently.The technology of the big opening of this formation has been saved the heat budget of hydrogen injection and annealing process.

In another embodiment, can use the carbon ion of the mask of different energy levels to inject to make from holder 1010 to apparatus the through hole on 1000 surface.This provides the through hole of easier etching, and the through hole that is used for loading to apparatus quickly required medicine also is provided.Circuit also can be set provide controlled voltage or suitable pressure, to provide driving pump to the surface of pump 1020.In yet another embodiment, can make additional pump or steep 1030, so that between holder and outlet pipe, have two pumps.When operating with suitable order, they have guaranteed that fluid is pumped on the direction of needs.Though the shape of apparatus 1000 is shown as orthogonal, however true form can change as required, be used for adapting with clinical application.The size that also can change pipe and holder obtains required working parameter.

In one embodiment, use above-mentioned technology can in adamantine a plurality of energy levels, form kapillary and other fluidic structures.The polycrystal of nanocrystal on single crystal diamond, the single crystal and single crystal diamond top can be used for these structures.In one embodiment, utilizing the energy inter-stage to interconnect can form such as Figure 11 instrument shown 1100.Under low voltage, use first mask to inject and form first step kapillary 1110.The lower energy levels that use the mask of higher energy to be infused in the apparatus 1100 form second stage kapillary 1120.Interconnect or through hole 1130 by using being infused in of the identical or different material of one or many to form between two kapillaries 1110 and 1120.

Can use repeatedly injection to form through hole at different energy levels.Use annealing to open kapillary, and annealing also can be used to open through hole.If through hole uses carbon ion to inject and forms, then can use aforesaid etching to open through hole.The kapillary that can pass opening if desired is provided with etching agent.Also can use the electrolysis that utilizes power and water stream of between the kapillary end points, using to remove graphite material.

In each embodiment, can form a plurality of kapillaries and through hole in a plurality of energy levels and between a plurality of energy level, to form complicated fluidic structures.Above-mentioned bubble can be integrated in the kapillary and be used as at staggered kapillary or switch between the passage or pump.Can increase holder and other required structures, comprise barrier film, socle girder, and also can form be supported on two ends beam so that multiple different function to be provided.Because this apparatus is made by diamond, perhaps can be by coated with CVD (chemical vapor deposition) diamond, they have high-biocompatibility in clinical application.

Kapillary can be made various size, for example from 5 to 10nm wide width to the millimeter scope.They also can be shaped as length as required.By the size that mask is controlled this two aspect is carried out in the injection that is used for forming this width and length.

In one embodiment, kapillary 1110 is manufactured to that its part is doped so that its conduction.This doping can provide in the process that forms diamond apparatus 1100, so that the top of kapillary 1110 conduction, and other parts of this pipe have the adamantine insulating property of unadulterated CVD.Can use electricimpulse to close or open kapillary, thereby as switch.In another embodiment, can electrode be set, to measure the fluidic electroconductibility in the kapillary at arbitrary end of current-carrying part capillaceous.

In yet another embodiment, as shown in the block diagram among Figure 12, optical pickocff and projector can be embedded in the diamond, perhaps use the CVD coated with CVD (chemical vapor deposition) diamond.Silicon substrate 1205 has optical launcher 1210, and this optical launcher 1210 is connected to fluorescence detector 1220 by waveguide 1230.CVD diamond coatings 1235 is used to seal this silicon structure.This diamond tectum 1235 is used to protect silicon structure and prevents their oxidations.Therefore, they can be used for implantable bioartificial and be biocompatible.In one embodiment, conduction input path 1240 is passed diamond layer from fluorescence detector 1210 and is extended, such as by doped silicon and contacting in diamond layer is formed on diamond layer.Form the conduction outgoing route at 1245 places, and this path extends to the outside of diamond coatings 1235 from fluorescence detector 1220.In certain embodiments, these input and output can be used as neural connector (neural conductor).In other embodiments, as mentioned below about the boron-doped diamond semi-conductor, can construct silicon and adamantine multiple combination.Various other optics and the electrical detectors of being made by silicon or gallium arsenide also can or optionally apply with CVD diamond parcel.In certain embodiments, the diamond current-carrying part can extend to the other end from an adamantine end, thereby provides based on adamantine neural connector.

As shown in figure 13, in another embodiment, can use the diamond chip 1300 of pre-determined thickness to make porous-film.Can make 10nm to micron-scale or bigger hole 1310, have the film of required strainability such as a series of hole manufacturings.This hole can be made by aforesaid masked ion injection and annealing or etching.Because diamond is high biocompatible, can carry out many clinical applications.According to using and surf zone, the thickness of this film can considerable change in certain embodiments.Except that these specific restrictions, can change the size and the layout of hole.

Figure 14 is the synoptic diagram of structure 1410, such as aforesaid a kind of structure, comprises optionally the prosthetic device that applies with CVD diamond 1420, implantable medical device, instrument etc.Because many such structures are known, this accompanying drawing is the block diagram form.Though it is coated that entire structure 1410 is illustrated as, only some need use the CVD coated with CVD (chemical vapor deposition) diamond.According to application, CVD diamond 1420 can be single crystal, nanocrystal or polycrystal.

Adamantine boron-doping of single crystal CVD and circuit manufacturing

An exemplary provides first and second synthetic diamond region of boron-doping.Second synthetic diamond region is mixed with more boron than first synthetic diamond region, and contacts with the first synthetic diamond region physics.In another exemplary, this first and second synthetic diamond region forms diamond semiconductor, for example schottky diode.

Figure 15-18 shows the manufacture method of monocrystalline synthetic diamond schottky diode, and this schottky diode is a kind of example such as the diamond semiconductor device that can use manufacturing of the present invention.Figure 15 shows the heavily doped diamond seed of boron, with respect to the tetravalence electronics of carbon wherein boron have only three valence electrons, make this diamond become strong p N-type semiconductorN material.Comprise in the lattice point in the diamond of boron and lack electronics, stayed " hole " that to accept electronics, should " hole " be actually mobile positive charge.Electronegative boron atom is fixed in the adamantine lattice, but this means that the boron atom can not move to help to provide is used as the hole that electronics is led in conducting process.

Though other examples use diffusion or ion implantation boron are injected diamond, and no matter this diamond is a synthetical or naturally occurring; But boron grows in the diamond along with forming diamond by chemical vapour deposition, perhaps adds by other technologies in some instances.Diamond contains boron, and the upper area that this boron passes the seed diamonds 101 of extending half micron to several microns at least mixes, and the boron atom distributes so that the upper strata has relatively uniformly, and wherein this boron atom is distributed as the density of expection.

Crystal seed 101 polishing to form flat upper surface, is used the edge of pruning crystal seed such as laser or parting tool, and to this edge clear up, etching and polishing.As illustrating at 102 places among Figure 15, then hydrogen atom is injected into the degree of depth that needs.In different examples, hydrogen atom is injected under different conditions, but hydrogen atom is to inject with respect to the angle of diamond surface 10 degree with the dose rate of about every square centimeter one microampere in an example.Electronics is injected by the energy with about 200KeV, until the total dose of the atom per square centimeter of about ten 17 powers is injected in the diamond 101.The parameter that changes the hydrogen injection will change the degree of depth and the density of resulting hydrogen input horizon.The hydrogen input horizon is shown as the layer of getting ready among Figure 15 102.

In case finish hydrogen is injected in the diamond seeds of boron-doping, for example by the chemical vapour deposition plasma reactor, the more diamond of growth on crystal seed.Form operable various technology for the diamond in other examples, comprise microwave plasma reactor, DC plasma reactor, RF plasma reactor, heated filament reactor and other such technology.Can make man-made diamond by several different methods and equipment, it for example is the United States Patent (USP) 6 of " System and Methodfor Producing Synthetic Diamond " at title, described in 582,513, the full content of this patent is incorporated herein by reference.

Sheng Chang diamond is a monocrystalline synthetic diamond in an example, and it uses the air-flow such as methane or other gases to come to provide precursor material (precursormaterial) as plasma reactor, to produce the adamantine plasma body of formation of deposits.Gas in some example or some diamond layer comprises plurality of impurities, for example the impurity such as various isotropic substances of boron hotchpotch or carbon.For example, have purity and the corresponding diamond that than carbon-13 isotopes concentration reduce higher and be referred to as the isotropic substance reinforcement than the average purity of carbon-12, and the especially reinforcement aspect heat conductivity.This makes them more be applicable to manufacturing such as semiconducter device, can realize than other modes obtainable higher power and the density of Geng Gao.Isotropic substance with diamond CVD precursor gases of carbon-12 is strengthened the diamond that can produce 1.1% carbon-13 concentration with the standard of being significantly less than, and produces the thermal conductivity that is up to 3300W/mK simultaneously.Other examples of method that production has the man-made diamond of high thermoconductivity comprise: growing diamond under the environment of low nitrogen, growth man-made diamond and use the boron hotchpotch to cause the increase of thermal conductivity under hydrogen-rich environment.

In certain embodiments, owing to put into hotchpotch in diamond crystal structures, the diamond regions with hotchpotch of boron or other injections can have the crystalline network big or slightly littler slightly than unadulterated diamond.In certain embodiments, by injecting the selected ion that is used to produce required crystalline network, can be controlled between the diamond with different concentration of dopant or the lattice mismatch between adulterated and unadulterated diamond.For example, the diamond regions of light boron-doping will have expansible crystalline network slightly with respect to the unadulterated diamond of mainly being made by carbon-12.Carbon-13 is added in the diamond of boron-doping and shunk crystalline network, and this also is used for some embodiment and eliminates lattice mismatch between diamond layer, perhaps be controlled at lattice mismatch or strain between the diamond layer.

In more detailed embodiment, in the diamond lattic structure that comprises about 99% carbon-12 and 1% carbon-13, in the zone of the region growing first light boron-doping that contacts the second more heavily doped boron.The crystalline network that more carbon-13 is increased to the diamond regions of the zone that can make more heavily doped boron in the zone of the second more heavily doped boron and lighter boron-doping matches each other, and has reduced or eliminated the lattice strain of the boundary of diamond layer.

Figure 16 shows the seed diamonds among Figure 15, and this seed diamonds has hydrogen input horizon 201, and has the synthetic diamond layer 202 that another is grown in the lip-deep boron-doping of injecting with hydrogen.In some instances, before injecting hydrogen or before 202 growths of second synthetic diamond region sometime, crystal seed 201 polished flattening; And before second synthetic diamond region growth or afterwards, crystal seed 201 is by such as be trimmed to required size and dimension by laser ablation.The upper strata grows into required thickness, for example is 100 microns in an example, and polished then and cutting forms the diamond assembly shown in Figure 16.

Assembly among Figure 16 is heated to be enough to make then wins diamond regions 101 in the separation of hydrogen injection energy level, produces a part of seed diamonds zone 101 that separates with the synthetic diamond region 202 that grows up to.Owing to the diamond part 302 that the part 303 of utilizing lighter boron-doping is removed more heavily doped boron, this operation has produced the seed diamonds 301 slightly littler than original seed diamonds 101.302 and 303 resulting structures have formed the semiconductor portions of schottky diode among Figure 17, when with such as other semiconductor materials of silicon relatively the time, this semiconductor portions is because adamantine characteristic can be with extra high voltage and power stage work.In other example, growth district will be than seed region heavy doping boron more, and the thickness of diamond regions is difference, and will carry out the variation in other structures and the design.

Figure 18 shows the diamond assembly that is formed by 302 among Figure 17 and 303, and this diamond assembly is pushed up from diamond seeds zone, 401 place, has the electrical lead that is connected with 403 places 402.Based on the performance of the work function of metal or fermi function and required schottky diode, select the metal associate member, and generally will be the metal or metal alloy that comprises such as aluminium, platinum, gold, titanium or nickel.This has formed schottky diode completely, and this diode is similar to the diode of other type in its ability of adjusting some signal or only allowing electric current pass through in one direction in some cases.Referring to the schottky diode among Figure 18, terminal 403 are called as anode, and terminal 402 are called as negative electrode.When the residing current potential of anode is higher than a certain voltage level of the residing current potential of negative electrode, electric current will flow through diode, but when anode was in than lower current potential of negative electrode or voltage, electric current can not flow through diode.This performance makes diode be widely used in the various electronic application, comprises detection, filtering and shaping electronic signal.

The rectifying part of schottky diode is actually the contact of metal-diamond semiconductor, rather than as great majority other such as the contact between the semiconductor material the semiconductor diode of p-n junction.But the principle of work of schottky diode is known relative complex, compares with conventional diode for many application to have many remarkable advantages.The forward drop at schottky diode two ends typically is significantly less than the forward drop at general p-n junction semiconductor diode two ends, the standard value of the volts lost at schottky diode two ends is .2 volts, and the standard value of the volts lost at silicon p-n junction diode two ends is .6-.7 volts.The capacitance at schottky diode two ends is also obviously lower, and compound compound faster than the current carrier in the p-n semiconducter junction significantly at the current carrier at the metal interface place of the barrier region that forms schottky diode, about about 10 psecs.This makes schottky diode be specially adapted to such as high-frequency detection, mixing and other similar application.Schottky diode further makes them be suitable for low-lying level detection application, for example radar or other radio detection with respect to the feature of the low noise of semi-conductor p-n junction diode.

Figure 19 is the method flow diagram of making such as the diamond semiconductor device of the boron-doping among Figure 18.At 501 places, produced the seed diamonds of boron-doping.This can by with ion implantation in natural or man-made diamond, by in the environment of rich boron, growing man-made diamond or realize by other suitable methods.By high pressure-temperature (HPHT) method, can make the diamond that grows up to by chemical vapour deposition or by other suitable methods.Seed diamonds surface in the boron-doping of 502 places is polished, to prepare the diamond crystal surface, plane of required crystalline orientation.For example, can be in 100 planes polishing diamond, tilt twice towards 110 planes, to produce the glazed surface that slightly departs from adamantine 100 surfaces.In different examples, can cut the edge of crystal seed and each other faces are polished or shape, and use pickling, water to dash and the surface is cleared up in solvent seasoning.

Then, select implant angle, energy level and dosage, and carry out hydrogen ion at 503 places and inject.Go out as shown in figure 15 and describe, injection parameter is configured to the hydrogen atom that in seed diamonds selected depth is injected selected density.After injecting hydrogen atom, the seed diamonds of injection is as the other adamantine crystal seed of growth, for example by chemical vapour deposition.Describe as Figure 16, in some instances, the diamond that grows up to comprises the boron concentration more higher or lower than seed diamonds.Diamond grows into always and obtains required thickness, for example 500 microns thickness, the perhaps thickness in 10 to 15,000 micrometer ranges.

In case the process of growth of finishing gets on except that the diamond assembly from the growth apparatus, and uses the laser cutter trim edge at 505 places.In other examples, the edge can use additive method to prune, and can polished or polishing.Therefore, the edge of crystal seed also can be trimmed to desired size, for example returns to the original seed sized before growth above the seed diamonds zone.

In non-oxidizable environment, for example in hydrogen or rare gas element, resulting diamond assembly is heated to makes the seed diamonds zone of diamond assembly at the isolating high temperature of hydrogen injection zone.In an example, this is separated in about 1200 degrees centigrade of appearance, and occurs in 1100 to 2400 degrees centigrade scope in other examples.As shown in figure 17, in case crystal seed and the diamond-seed diamonds components apart that grows up to then stay the diamond-seed diamonds assembly that grows up to, and the seed diamonds above the hydrogen input horizon partly are connected to the diamond that grows up to.In some instances, this separates at high temperature spontaneous generation, but produces by exerting pressure to the hydrogen input horizon in other examples.

Product is the semiconducter device of boron-doping, and it can further be pruned and polish at 507 places, and can be connected to lead-in wire and packed to be used as semiconducter device at 509 places.

As shown in figure 20, the embodiment of other semiconducter device consistent with various embodiments of the present invention comprises the manufacturing unicircuit.This figure shows common diamond semiconductor substrate at 601 places, and this diamond semiconductor substrate has the zone or the part 602 of boron-doping at least.Second area is 603 grown, inject or otherwise contact formation with diamond regions 602, still has the doping density of different boron.This has formed the semiconductor portions of schottky diode, but can use similar method to form transistor and various miscellaneous part.The metal wire that use has suitable work function is connected to element 602 and 603 on the circuit, and in other example, uses polysilicon or other conductor or semiconductor element element 602 and 603 to be connected to the other parts of unicircuit.

The example of the electron device that Figure 21 illustrates is corresponding to some exemplary of the present invention, can construct.Radar set 701 uses schottky diode to be used for the radio detection of low-lying level, high frequency, and is used for mixing in other exemplary application such as radar Doppler.Electron device has benefited from using the diamond semiconductor of boron-doping can the enhanced performance, for example with respect to such as the improved Power Processing of the conventional semiconductors of silicon, higher density and better properties.

The place that the diamond of boron-doping is different from silicon-based semiconductor is that also it is a substantially transparent, has color and luster azury.This diamond that makes boron-doping is except being applicable to such as the traditional LED or laser diode, especially suitable being used in such as light structurally from the blue led or laser semiconductor device of the emission of the place except the outside surface of semiconducter junction.Because the diamond of boron-doping conducts electricity to a certain extent, it also can be used for the various application of needs conduction, for example in electrode, in its state and further feature can be by the parting tools of the conduction of electronic surveillance, in the heating tank of conduction or scatterer and can be heated or can change in the optical window of specific refractory power by electric current.

Schottky barrier junction also is used for the multiple application except that schottky diode, comprises being used for bipolar junction transistor, and schottky junction is between transistorized base stage and collector electrode in this bipolar junction transistor.This has prevented that the saturated mistake of transistor from causing that the transistor switch time is too fast deeply.Metal-semiconductor field effect transistor (MESFET) also uses back-biased Schottky barrier to be provided at the interior depletion region of transistor, and is similar to JFET work.This external other comprises in High Electron Mobility Transistor (HEMT) device that the use Schottky barrier provides the very high electroconductibility in the transistor in heterojunction device.

Can expect that the described device of this specification sheets will not only be applied in schottky diode and the relevant device, and be applied in other semi-conductors, unicircuit and the electron device.Though this specification sheets is described and illustrated specific embodiment, it will be appreciated by one skilled in the art that to be applicable to that the various configurations that realize identical purpose can substitute shown specific embodiments.The application's intention is to cover any remodeling of the present invention and variant.This means that the present invention only limits by all scopes of claim and its equivalent.

The summary that is provided meets 37 C.F.R. § 1.72 (b), so that the reader can determine the type and the main points of the open text of this technology apace.The condition that summary is submitted to is that it is not used in scope or the implication of explaining or limiting claim.

Claims (9)

1. method comprises:

Apply apparatus with nanocrystal diamond;

Be coated with the chemical vapour deposition diamond of growing on the medicine equipment of nanocrystal diamond; And

Hotchpotch is included in the chemical vapour deposition diamond of growth.

2. the described method of claim 1, wherein said chemical vapour deposition diamond is a single-crystal diamond.

3. the described method of claim 1, also comprise with described instrument soaking in containing the alcoholic acid nanocrystal diamond to apply described apparatus with nanocrystal diamond.

4. the described method of claim 1, wherein said nanocrystal diamond adheres on the described apparatus by adhesive carrier.

5. the described method of claim 4, wherein said adhesive carrier comprises photoresist material.

6. the described method of claim 1, wherein said apparatus comprises medicine equipment.

7. the described method of claim 1, wherein said apparatus comprises surgical scalpels.

8. the described method of claim 1, wherein said apparatus comprises conduit.

9. the described method of claim 1, wherein said apparatus comprises implantable drug delivery device.

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