JPS6331109A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6331109A JPS6331109A JP17358986A JP17358986A JPS6331109A JP S6331109 A JPS6331109 A JP S6331109A JP 17358986 A JP17358986 A JP 17358986A JP 17358986 A JP17358986 A JP 17358986A JP S6331109 A JPS6331109 A JP S6331109A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- substrate
- grown
- laser beam
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 28
- 239000007789 gas Substances 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000012808 vapor phase Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000097 high energy electron diffraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
シリコン・カーバイト（ＳｉＣ）の成長プロセスにレー
ザビームを使用し、５ｉＣ１ｌ成長プロセスの低温化を
図る。DETAILED DESCRIPTION OF THE INVENTION [Summary] A laser beam is used in the silicon carbide (SiC) growth process to reduce the temperature of the 5iC11 growth process.
本発明は半導体装置の製造方法に関するもので、さらに
詳しく言えば、レーザビームを用い半導体基板の所望の
領域にβ−５ｉＣ（３Ｃ−ＳｉＣ）の単結晶膜を成長す
る方法に関するものである。The present invention relates to a method for manufacturing a semiconductor device, and more specifically, to a method for growing a β-5iC (3C-SiC) single crystal film on a desired region of a semiconductor substrate using a laser beam.
ＳｉＣは硬度とか耐熱性（融点２８００℃）とかが優れ
ているために、過去には研摩材などの特殊目的のために
用いられたものであるが、半導体材料としては、熱的、
化学的に強いので高温や衝撃の強い条件下でも使用でき
、さらにエネルギー間隔が大で、ＰＮ接合が形成されう
るので、注目されている材料である。SiC has excellent hardness and heat resistance (melting point 2800°C), so in the past it was used for special purposes such as abrasives, but as a semiconductor material, it has excellent thermal,
It is a material that is attracting attention because it is chemically strong and can be used under conditions of high temperatures and strong impact, and it has a large energy interval and can form a PN junction.
従来ＳｉＣの成長法としては、２５００℃前後での昇華
法、気相エピタキシャル（ＶＰＥ ）成長、液相エピタ
キシャル成長（ＬＰＥ）が研究され、気相エピタキシャ
ル成長としては、常圧でＳｉα、＋Ｃ便、。Conventional methods for growing SiC include sublimation at around 2500°C, vapor phase epitaxial (VPE) growth, and liquid phase epitaxial growth (LPE).
５ｉＨＣＪ！ ３＋ Ｃ４Ｈｒｐ、Ｓｉｎ＜ ＋ Ｃ４
Ｈｙ、Ｓｔα味＋Ｃ６’ｌｌｊ＋ＳｉＣ［！ ４ 千Ｃ
３）１１７ などノカスノ組合せ、ＣＨ３５ｉＣＩｌ
！ ３分解などにより、１３００〜１８００℃の高温で
のＳｉＣへテロエピタキシャル成長が報告されている（
松波弘之、 Ｓｔ（：のエピタキシャル成長と固体素子
への応用、応用物理（１９７９） ｐｐ、 ５６５−５
７１．）。5iHCJ! 3+ C4Hrp, Sin< + C4
Hy, Stα taste + C6'llj + SiC[! 4,000C
3) Nokasuno combination such as 117, CH35iCIl
! SiC heteroepitaxial growth at high temperatures of 1,300 to 1,800 °C has been reported by 3 decomposition, etc. (
Hiroyuki Matsunami, Epitaxial growth of St(:) and its application to solid-state devices, Applied Physics (1979) pp, 565-5
71. ).
常圧化学気相成長法（ＣＶＤ法）によるＳｉＣの成長に
は従来技術においては１３００〜１８００℃の高温を必
要とし、シリコンウェハを用いる半導体装置の製造プロ
セスには通しない。本発明者の実験によると、スパッタ
による場合には成長したｓｉｃ膜の結晶性が良くないこ
とが認められ、他方昇華法は高温でカーボンソースを気
相ガスにしてＳｉ基板に付けるのであるが、大面積のＳ
ｉＣ膜が作られない問題がある。Conventional techniques require a high temperature of 1,300 to 1,800° C. to grow SiC by atmospheric pressure chemical vapor deposition (CVD), and cannot be used in semiconductor device manufacturing processes using silicon wafers. According to the inventor's experiments, it has been found that the crystallinity of the SIC film grown by sputtering is not good, while in the sublimation method, the carbon source is made into a vapor phase gas at high temperature and attached to the Si substrate. Large area S
There is a problem that an iC film cannot be formed.
また、いずれの方法においても格子定数の不整合、熱膨
張係数および熱伝導率の違いのために結晶性の良いＳｉ
Ｃ膜が堆積されず、成長したＳｉＣ膜が剥離しやすい問
題がある。In addition, in both methods, Si with good crystallinity is
There is a problem that the C film is not deposited and the grown SiC film is likely to peel off.
本発明はこのような点に鑑みて創作されたもので、Ｓｉ
Ｃの単結晶を選択的に堆積（ｄｅｐｏｓｉｔ ）する方
法を提供することを目的とする。また、ベース拡散を防
ぐこともメリットの１つである。The present invention was created in view of these points.
It is an object of the present invention to provide a method for selectively depositing single crystals of C. Another advantage is that it prevents base diffusion.
第１図は本発明実施例の部分的断面図であり、図中、１
１はＣＯ２レーザ発振器、１２は前記レーザ発振器のシ
ャッタ部、１３はレーザビーム（スポット径０．３μｍ
）、１４はレーザビームの方向を９０°曲げるためのミ
ラー、１５はガリウム砒素（ＧａＡｓ）レンズ（集光レ
ンズ）、１６はレンズ１５によって集光されたレーザビ
ーム、１７は反応ガス（５ｉＨ１＋Ｃ３Ｈ＃＋Ｈ２）
、２１は半導体基板（例えばシリコンウェハ）２２はｘ
Ｙテーブルである。FIG. 1 is a partial sectional view of an embodiment of the present invention, and in the figure, 1
1 is a CO2 laser oscillator, 12 is a shutter section of the laser oscillator, and 13 is a laser beam (spot diameter 0.3 μm).
), 14 is a mirror for bending the direction of the laser beam by 90 degrees, 15 is a gallium arsenide (GaAs) lens (condensing lens), 16 is the laser beam focused by the lens 15, and 17 is a reactive gas (5iH1+C3H#+H2 )
, 21 is a semiconductor substrate (for example, a silicon wafer) 22 is x
This is a Y table.
本発明においては、反応ガス１７を基板２１の所定の位
置に吹き付け、同位置にレーザビーム１６を照射して当
該位置にシリコン・カーバイト（ＳｉＣ）の単結晶を成
長する。In the present invention, a reactive gas 17 is sprayed onto a predetermined position on the substrate 21, and the same position is irradiated with a laser beam 16 to grow a single crystal of silicon carbide (SiC) at the position.
上記の方法において、Ｓｌ基板にＳｉとＣのソースガス
を吹き付け、ＳｉＣを成長すべき領域にレーザビームを
照射し光のエネルギーで気相反応させて基板上にＳｉＣ
を堆積するのであるが、レーザビームはスポットは小で
あるがそこに大なる熱エネルギーが発生するので、表面
温度がｔｏｏｏ〜１３００℃の基板上にＳｉＣが堆積さ
れる。In the above method, a source gas of Si and C is sprayed onto the Sl substrate, a laser beam is irradiated onto the region where SiC is to be grown, and the energy of the light causes a vapor phase reaction to form SiC on the substrate.
Although the laser beam has a small spot, it generates a large amount of thermal energy, so SiC is deposited on a substrate whose surface temperature is between 1,300°C and 1,300°C.
以下、図面を参照して本発明の実施例を詳細に説明する
。Embodiments of the present invention will be described in detail below with reference to the drawings.
本発明においては、第１図に示される如く、Ｓｔソース
ガス１３とＣソースガスからなる反応ガス１７を通常の
技術で吹き付け、その部分をレーザビームでｔｏｏｏ〜
１３００℃に加熱する。ＳｉソースとしてはＳｉＨ幡
（または５ｉＪ６）を、またＣソースとしてはＣ３Ｈｔ
（またはＣＨＩ 、 ＣよＨ２もしくはＣ，Ｈ，）を
用いた。このように、基板１１上のＳｉＣを成長すべき
領域に、ＣＯ２レーザ１６を照射し、基板２１の前記領
域にβ−５ｉＣ膜を成長させた。光ＣＶＤＶ法において
は反応ガスをガス相でいかに活性化するかが問題である
が、本発明においてはレーザビームが小なるスポットに
大なる熱エネルギーを生ずることを利用すべく、ＣＯ２
レーザを用いた。ＣＯ２レーザに代えてＡｒレーザまた
はその他のエネルギービームを用いることも可能である
。In the present invention, as shown in FIG. 1, a reaction gas 17 consisting of an St source gas 13 and a C source gas is sprayed using a conventional technique, and the area is exposed to a laser beam.
Heat to 1300°C. SiHata is the Si source.
(or 5iJ6), and C3Ht as a C source
(or CHI, CyoH2 or C,H,) was used. In this way, the CO2 laser 16 was irradiated onto the region on the substrate 11 where SiC was to be grown, and the β-5iC film was grown on the region of the substrate 21. In the optical CVDV method, the problem is how to activate the reactive gas in the gas phase, but in the present invention, in order to take advantage of the fact that the laser beam generates a large amount of thermal energy in a small spot, CO2
A laser was used. It is also possible to use an Ar laser or other energy beam in place of the CO2 laser.
再び第１図を参照すると、ＣＯ２レーザ発振器１１から
発振されるスポット径０．３μｍのレーザビーム１３を
、ミラー１４を用いて９０”向きを変え、次いでＧａＡ
ｓレンズ１５を用いて集光して最終的に５０Ｗの出力の
レーザビーム１６を得る。なお図中、１８はレーザビー
ムがその内部を進む遮蔽筒、１９はＡｒガス導入管であ
る。第１図に示す装置はスループット向上と膜質向上の
ために０．１〜０，２ Ｔｏｒｒの減圧状態に保たれる
よう図示しないチャンバ内に配置する。Referring again to FIG. 1, the direction of the laser beam 13 with a spot diameter of 0.3 μm emitted from the CO2 laser oscillator 11 is changed by 90" using a mirror 14, and then
The light is focused using the S lens 15 to finally obtain a laser beam 16 with an output of 50W. In the figure, 18 is a shield tube through which the laser beam advances, and 19 is an Ar gas introduction tube. The apparatus shown in FIG. 1 is placed in a chamber (not shown) to maintain a reduced pressure of 0.1 to 0.2 Torr in order to improve throughput and film quality.
基板２１はＸＹ方向に可動なＸＹテーブル２２上に配置
され、テーブル２２は３００℃に加熱されている。Ｓｉ
Ｃ膜を成長すべき基板２１の部分に反応ガス（５ｉｌ（
＋十Ｃ３Ｈｔ （２０％） ＋ ８２ ）を吹き付け、
その同じ部分にレーザビーム１６を照射し、基板の当該
部分を１０００〜１３００℃に加熱する。ガスの流速は
、ＳｉＨ４は１０ ｓｃｃ／ ｍｉｎ ％ Ｃ３Ｈｙは
１０ ｓｃｃ／ ｗｉｎ ＳＨ２は１００ ｓｃｃ ／
ｍｉｎに設定した。The substrate 21 is placed on an XY table 22 movable in the XY directions, and the table 22 is heated to 300°C. Si
A reactive gas (5il(
+10C3Ht (20%) +82),
The same portion is irradiated with a laser beam 16, and the portion of the substrate is heated to 1000 to 1300°C. The gas flow rate is 10 scc/min% for SiH4, 10 scc/win for C3Hy, and 100 scc/win for SH2.
It was set to min.
基板２１は３００℃に加熱され、その一部のみが１００
０〜１３００℃に加熱されるので、基板にストレスがか
かることが防止され、基板の反りなどが防止されるだけ
でなく、成長したＳｉＣ膜の剥離がないことが認められ
た。The substrate 21 is heated to 300°C, and only a portion of it is heated to 100°C.
Since it was heated to 0 to 1300° C., stress was not applied to the substrate, and it was observed that not only was warping of the substrate prevented, but also that the grown SiC film did not peel off.
本発明においてはレーザビームを用いるため大面積のＳ
ｉＣ膜は堆積できない代りに、基板の所望の小面積の領
域にＳｉＣＰＡを堆積することができる利点がある。In the present invention, since a laser beam is used, a large area of S
Although an iC film cannot be deposited, there is an advantage in that SiCPA can be deposited on a desired small area of the substrate.
第２図（ａｌと（ｂｌはβ−３ｉＣ膜の成長の従来例と
本発明実施例の断面図で、図中、２３は５ｉ０２膜を示
し、 ＳｉＯ２膜に開けた窓内にβ−５ｉＣを成長する
場合、従来例では第２図（ａ）に示される如く窓内の中
央部分のみにβ−５ｉＣ２４が成長し、そのまわりには
多結晶状（ポリクリスタルに似た、ｐｏｌｙｃｒｙｓ−
ｔａｌ １ｉｋｅ） ＳｉＣ膜２４ａが成長したのであ
るが、本発明によると、第２図（ｂ）に示される如く、
窓内にβ−５ｉＣ２４のみを成長することが可能になっ
た。Figure 2 (al and (bl) are cross-sectional views of a conventional example of growing a β-3iC film and an example of the present invention. When growing, in the conventional example, β-5iC24 grows only in the central part of the window, as shown in FIG.
According to the present invention, as shown in FIG. 2(b), the SiC film 24a has grown.
It became possible to grow only β-5iC24 within the window.
本発明者は上記した方法で成長したβ−５ｉＣの高速反
射電子線回折（反射ＨＥＥＤ、 Ｉ？）ＩＥＥＤ ）像
を観察した。第３図は実際に得られた回折像の写真に基
づいて作成した図であるが、この像にストリーク状のス
ポット２８が観察され、このことから成長させたβ−５
ｉＣが表面に僅かに凹凸のある単結晶であることが確認
された。The present inventor observed a high-speed reflection electron diffraction (reflection HEED, I?)IEED) image of β-5iC grown by the method described above. FIG. 3 is a diagram created based on a photograph of an actually obtained diffraction image, and a streak-like spot 28 was observed in this image, which indicates that the grown β-5
It was confirmed that iC was a single crystal with a slightly uneven surface.
高温でエミッタ領域をエピタキシャル成長すると、急峻
化接合が得られず、またドープした不純物が熱拡散によ
って縦方向に不規則に拡がる問題があるが、本発明によ
るとこのような問題が解決される。When the emitter region is epitaxially grown at high temperatures, there are problems in that a steep junction cannot be obtained and doped impurities spread irregularly in the vertical direction due to thermal diffusion, but the present invention solves these problems.
本発明応用例は第４図に示され、基板２１には通常の技
術でｎ１型のコレクタ２５、ｎ型エピタキシャル層２６
、ベース２７となるｐ型エピタキシャル層が形成され、
基板表面には５ｉ０２膜２３が形成されている。ＳｉＯ
２膜２３に図示の如く窓開けし、そこに前記した方法で
β−５ｉＣ２４を堆積し、それをｎ＋型にドープしてエ
ミッタを形成することができる。An application example of the present invention is shown in FIG.
, a p-type epitaxial layer serving as the base 27 is formed,
A 5i02 film 23 is formed on the surface of the substrate. SiO
An emitter can be formed by opening a window in the 2 film 23 as shown in the figure, depositing β-5iC 24 therein by the method described above, and doping it to n+ type.
ＳｉＣ２４をｎ＋型にドープするには、通常の気相ドー
ピングまたはイオン注入によることができる。Doping the SiC 24 n+ type can be done by conventional vapor phase doping or ion implantation.
以上述べてきたように本発明によれば、ＳｉＣ膜の成長
において、プロセスの低温化が可能となり、ＳｉＣ膜の
剥離の問題が解決され、結晶性に優れたＳｉＣ膜を微細
部分に堆積することができる。As described above, according to the present invention, it is possible to lower the process temperature in growing a SiC film, solve the problem of peeling of the SiC film, and deposit a SiC film with excellent crystallinity in minute parts. Can be done.
第１図は本発明実施例の部分的断面図、第２図（ａｌと
（ｂｌは従来例と本発明実施例におけるＳｉＣの成長を
示す断面図、
第３図はＳｉＣの高速反射電子線回折像を示す図、第４
図は本発明応用例の断面図である。
第１図ないし第４図において、
１１はＣＯ２レーザ発振器、
１２はシャッタ部、
１３はレーザビーム、
１４はミラー、
１５はＧａＡｓレンズ、
１６は集光されたレーザビーム、
１７は反応ガス、
１８は遮蔽筒、
１９はＡｒガス導入管、
２１は基板、
２２はＸＹテーブル、
２３は ＳｉＯ２Ｎ臭、
２４はβ−５ｉＣ。
２４ａは多結晶状ＳｉＣ膜、
２５はコレクタ、
２６はエピタキシャル層、
２７はベース、
２日はストリーク状のスポットである。
代理人 弁理士 久木元 彰
復代理人 弁理士 大 菅 義 之
千ｔ９ｇ文胞θ・１呻倒助賭
第１ 図
ＳｉＣａＲ’ｈ昏＊ｔｌｒｒｌＪＥ４
第２図Fig. 1 is a partial cross-sectional view of the embodiment of the present invention, Fig. 2 (al and (bl) are cross-sectional views showing the growth of SiC in the conventional example and the embodiment of the present invention, and Fig. 3 is a high-speed reflection electron diffraction analysis of SiC. Diagram showing the image, No. 4
The figure is a sectional view of an application example of the present invention. 1 to 4, 11 is a CO2 laser oscillator, 12 is a shutter section, 13 is a laser beam, 14 is a mirror, 15 is a GaAs lens, 16 is a focused laser beam, 17 is a reactant gas, 18 is a mirror 21 is a substrate, 22 is an XY table, 23 is a SiO2N odor, and 24 is β-5iC. 24a is a polycrystalline SiC film, 25 is a collector, 26 is an epitaxial layer, 27 is a base, and 2 is a streak-like spot. Agent Patent Attorney Akifuku Agent Patent Attorney Yoshio Suga
Claims (2)
ーボンのソースガス（１７）を吹き付け、当該部分にエ
ネルギービーム（１６）を照射しその部分にシリコンカ
ーバイト（ＳｉＣ）を成長することを特徴とする半導体
装置の製造方法。(1) A silicon and carbon source gas (17) is sprayed onto a predetermined portion of a semiconductor substrate (21), and an energy beam (16) is irradiated onto the portion to grow silicon carbide (SiC) there. A method for manufacturing a featured semiconductor device.
Ｈ＿６であり、カーボンソースガスがＣ＿３Ｈ＿８、Ｃ
Ｈ＿４、Ｃ＿２Ｈ＿２またはＣ＿２Ｈ＿４であることを
特徴とする特許請求の範囲第１項記載の方法。(2) Silicon source gas is SiH_4 or Si_2
H_6, and the carbon source gas is C_3H_8, C
2. A method according to claim 1, characterized in that it is H_4, C_2H_2 or C_2H_4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17358986A JPS6331109A (en) | 1986-07-25 | 1986-07-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17358986A JPS6331109A (en) | 1986-07-25 | 1986-07-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6331109A true JPS6331109A (en) | 1988-02-09 |
Family
ID=15963385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17358986A Pending JPS6331109A (en) | 1986-07-25 | 1986-07-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6331109A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10956772B2 (en) | 2015-08-03 | 2021-03-23 | Hy-Ko Products Company | High security key scanning system |
-
1986
- 1986-07-25 JP JP17358986A patent/JPS6331109A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10956772B2 (en) | 2015-08-03 | 2021-03-23 | Hy-Ko Products Company | High security key scanning system |
| US11842554B2 (en) | 2015-08-03 | 2023-12-12 | Hy-Ko Products Company Llc | High security key scanning system |
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