CN101836333A - Conductive particle, circuit connecting material, and connection structure - Google Patents
Conductive particle, circuit connecting material, and connection structure Download PDFInfo
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- CN101836333A CN101836333A CN200880112368A CN200880112368A CN101836333A CN 101836333 A CN101836333 A CN 101836333A CN 200880112368 A CN200880112368 A CN 200880112368A CN 200880112368 A CN200880112368 A CN 200880112368A CN 101836333 A CN101836333 A CN 101836333A
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- electrode
- circuit
- conducting particles
- adhesive composite
- melting
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- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
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- 239000009719 polyimide resin Substances 0.000 description 1
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- BWJUFXUULUEGMA-UHFFFAOYSA-N propan-2-yl propan-2-yloxycarbonyloxy carbonate Chemical compound CC(C)OC(=O)OOC(=O)OC(C)C BWJUFXUULUEGMA-UHFFFAOYSA-N 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 229920002379 silicone rubber Polymers 0.000 description 1
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- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Non-Insulated Conductors (AREA)
- Adhesive Tapes (AREA)
- Powder Metallurgy (AREA)
Abstract
Disclosed is a circuit connecting material (50) for connecting a first electrode and a second electrode facing each other, which contains an adhesive composition (52) and conductive particles (10) dispersed in the adhesive composition (52). Each conductive particle (10) comprises a core (12) mainly composed of a material having a melting point or softening point of T1 ( DEG C), a conductive layer (14) covering the surface of the core (12) and mainly composed of a low-melting-point metal having a melting point of T2 ( DEG C), and an insulating layer (16) covering the surface of the conductive layer (14) and composed of a resin composition having a softening point of T3 ( DEG C). In this connection, T1, T2 and T3 satisfy the following formula (1). T1 > T2 > T3 (1).
Description
Technical field
The syndeton body that the present invention relates to conducting particles, contains the circuit connection material of this conducting particles and use this circuit connection material.
Background technology
Along with the miniaturization slimming of electronic unit, the electrode that is used for electronic unit also becomes more meticulous at the densification height.As the 1st electrode that connects configuration relatively and the circuit connection material of the 2nd electrode, can use anisotropic conductive bonding agent or anisotropic conductive film.As this anisotropic conductive film, can enumerate the material that the circuit connection material that will comprise a plurality of conducting particless (for example, metallic such as Ni) and adhesive composite forms membranaceous gained.
The 1st electrode and the 2nd electrode of configuration use following method to connect relatively.At first, under the state that the 1st electrode and the 2nd electrode dispose opposite one another, make the anisotropic conductive film between the 1st electrode and the 2nd electrode.Then, when heating is by the 1st and the 2nd electrode and the formed structure of anisotropic conductive film, on relative direction, pressurize.At this moment, by solidifying the anisotropic conductive film, make the 1st electrode and the 2nd electrode be bonded to each other fixing.Thus, keep the 1st and the 2nd adjacent interelectrode insulating properties, be electrically connected the 1st electrode and the 2nd electrode of configuration relatively simultaneously.
In above-mentioned method of attachment, relatively the 1st electrode and the 2nd interelectrode the conducting of configuration mainly obtain by conducting particles and the 1st in the anisotropic conductive film is contacted with the 2nd electrode.Yet because this connection is to contact with each other by refractory metal to obtain conducting, so contact resistance is big, and long-term connection reliability deficiency.
Therefore, as the trial that reduces contact resistance, for example, proposed on the surface of base material, to be provided with a plurality of different metal levels, simultaneously, as outermost layer, use low-melting indium, tin, tin-lead alloy technology (for example, referring to patent documentation 1,2) as principal component.At this moment, by the outermost layer of heating fusion conducting particles,, therefore can reduce the 1st electrode and the 2nd interelectrode resistance that is connected of relative configuration because the low-melting-point metal and the 1st and the 2nd electrode of fusion have produced metal bond.
Patent documentation 1: TOHKEMY 2002-170427 communique
Patent documentation 2: No. 3542611 communique of Japan's special permission
Summary of the invention
The problem that invention will solve
Yet, use the situation of the such conducting particles of above-mentioned patent documentation 1,2, because the surface tension of low-melting-point metal under molten condition on surface is very big, therefore, by heating and pressurization and connection electrode each other the time, the adjacent conductive particle contacts each other, is easy to generate fusion.As a result, the adjacent electrode conducting has the tendency that produces short circuit (short).Between the 1st adjacent electrode and the 2nd interelectrode spacing narrow more, then should the tendency remarkable more.
The present invention In view of the foregoing carries out, its purpose is to provide the very circuit connection material of excellence of a kind of connection reliability, this connection material can make the interelectrode sufficient conductivity of the sufficient insulating properties between adjacent electrode and relative configuration on the same substrate and deposits with high level, and can keep good insulation performance and good electrical conductivity for a long time, and used conducting particles in a kind of this circuit connection material is provided.In addition, purpose is to provide the very syndeton body of excellence of a kind of connection reliability, the circuit connection material that it has above-mentioned feature by use, thus the interelectrode conductivity of the sufficient insulating properties between adjacent electrode and relative configuration on the same substrate fully improved.
The method of dealing with problems
To achieve these goals, the invention provides a kind of conducting particles, it has with fusing point or softening point is T
1(℃) material be T as the surface of the nuclear of principal component, this nuclear of coating and with the fusing point
2(℃) low-melting-point metal be T as the surface of the conductive layer of principal component and this conductive layer of coating and by softening point
3(℃) the formed insulating barrier of resin combination, and, described T
1, T
2And T
3Satisfy following formula (1).
T
1＞T
2＞T
3????????????(1)
In the conducting particles of the present invention, with the low-melting-point metal be principal component conductive layer surface further be insulated layer institute's coating.Therefore, fully suppressed because of being exposed to the surface passivated membrane that the oxidation atmosphere forms.When this conducting particles of heating, at first, at the softening point T of the resin combination that constitutes surface insulation layer
3Down, this insulating barrier is softening, and demonstrates flowability.Along with flowing of insulating barrier, exposing on the surface of conducting particles with the low-melting-point metal is the conductive layer of principal component.When further heating and heating up, at the fusing point T of low-melting-point metal
2Down, conductive layer fusion.In the conductive layer of conducting particles, owing to do not form passivating film, so conductive layer its layer inside not only, and the also fusion smoothly of its surface.Therefore, for example when the circuit connection material, it can be than the conducting particles that does not have insulating barrier on the outermost layer, more fully with metal material driving fit such as electrode.
On the other hand, not having the conducting particles in the past of insulating barrier on the outermost layer, because its low-melting-point metal is generally the material of oxidative resistance difference, is the easy oxidation of conductive layer of principal component with the low-melting-point metal therefore.Like this, can think the surface of conductive layer of oxidation to have formed so-called passivating film, thus stabilisation.Having the conducting particles of this conductive layer at outermost layer, even heat, also only be to be in than the not oxidation low-melting-point metal in the layer inside of passivating film inside to produce fusion, and the passivating film of lip-deep stabilisation is difficult to fusion.Therefore, for example when the circuit connection material, think that it can't be fully and the electrode driving fit.
In the present invention, as the fusing point T of the low-melting-point metal of conducting particles conductive layer principal component
2Be preferably 130 ℃～250 ℃.
Thus, when the electric conduction of heating particle, the conductive layer fusion can be successfully made, and for example as circuit connection material the time, the connection reliability of syndeton body can be further improved.In addition, as fusing point T
2During less than 130 ℃, on for example, be limited in the heatproof cyclic test more than 125 ℃,, therefore have the very excellent connection reliability and the very excellent impaired tendency of mechanical strength of rewarding syndeton body owing to the low-melting-point metal fusion.On the other hand, as fusing point T
2When surpassing 250 ℃, when connection electrode, low-melting-point metal is fully fusion not, therefore has the superior electrical conductivity and the impaired tendency of connection reliability of rewarding syndeton body.
In addition, in the present invention, provide a kind of circuit connection material, it is used to connect opposite one another the 1st electrode and the 2nd electrode, and contains adhesive composite and the above-mentioned conducting particles that is dispersed in this adhesive composite.
Sort circuit connects material, owing to contain conducting particles with above-mentioned feature, therefore when being used as the circuit connecting section of syndeton body, can make the interelectrode sufficient conductivity of the sufficient insulating properties between adjacent electrode and relative configuration on the same substrate and deposit with high level, and can keep good insulation performance and good electrical conductivity for a long time.
In addition, conducting particles in the circuit connection material of the present invention, because having with littler than the low-melting-point metal usually resin combination of surface tension on the outermost layer is the insulating barrier of principal component, therefore in heating and during bonding electrodes, the conducting particles that can fully suppress in the adhesive composite fuses each other.Therefore even adjacent particles contacts with each other, owing to have insulating barrier on its outermost layer, can not produce yet and conduct.Therefore, can keep the insulating properties between adjacent electrode on the same substrate with high level.In addition, during pressurization when connection electrode, though insulating barrier is in fusion or softening state, but because the external force that pressurization produces does not act directly on the direction vertical with compression aspect the adjacent conductive particle each other, therefore can think break through insulating barrier and cause inboard conductive layer to contact with each other and the possibility that fuses extremely low.
In addition, the external force that pressurization produced when electrode connects, flow or remove being clipped in the 1st and the 2nd interelectrode conducting particles generation effect of relative configuration, making the insulating barrier that is in fusion or soft state, and further act as conductive layer with fusion and be squeezed in power on the 1st or the 2nd electrode.Yet conducting particles of the present invention is owing to have with high-melting-point or softening point T
1Material be the nuclear of principal component, therefore greatly reduced because of external force squeeze broken, and the possibility that causes the low-melting-point metal composition to disperse towards periphery.
Circuit connection material of the present invention, its adhesive composite contains thermoplastic resin, and when the softening point of adhesive composite be T
4The time, preferably satisfy following formula (2).
T
1＞T
2＞T
3＞T
4??????(2)
Sort circuit connects material, when connecting the electrode of configuration relatively, has low softening point T
4Adhesive composite have sufficient flowability.Therefore, by heating and pressurizing, on electrode that disposes relatively and conducting particles, applied enough pressure, and can further improve connective stability.In addition, because the insulating barrier of conducting particles, to have the T of ratio
4Higher softening point T
3Resin combination be principal component, therefore when mobile,, also be difficult to welding even conducting particles contacts each other, further, owing to having neither part nor lot in the conducting particles insulating barrier that connects between the electrode of relative configuration, to have the T of ratio
4Higher softening point T
3Resin combination be principal component, the conductive layer of the conducting particles that does not therefore contact with electrode is difficult to expose, thus can prevent more positively that conductive layer because of conducting particles from contacting with each other produces short circuit.
Circuit connection material of the present invention, preferably its adhesive composite contains thermosetting resin, and adhesive composite has flowability by heating, and engages the back with the conductive layer that with the low-melting-point metal is principal component at the 1st electrode and the 2nd electrode and solidify.
That is to say that when the adhesive composite of forming circuit connection material contains thermosetting resin, wish that by heating, its viscosity descends, thereby has flowability, continuation heating again is cured reaction, thereby tackify forms solid shape.When the temperature that makes circuit connection material by heating and pressurizing rises, can form syndeton as described below.That is to say that adhesive composite has demonstrated flowability, and conducting particles is clipped between the 1st and the 2nd electrode.Then, the insulating barrier of conducting particles is softening, exposes low-melting-point metal.Then, the low-melting-point metal fusion, the 1st and the 2nd electrode produces metal bond.Then, the viscosity of adhesive composite increases and solidifies.In addition, have neither part nor lot in the insulating barrier of the conducting particles that connects between the electrode of relative configuration, even than softening point T
3Under the higher temperature, also be not applied in pressure, so the conductive layer of conducting particles is difficult to expose, thereby can prevent positively that conductive layer because of conducting particles from contacting with each other produces short circuit.
In the present invention, the content of conducting particles is preferably 1～10 overall quality % of circuit connection material.
Content by using conducting particles is the circuit connection material of 1～10 overall quality % of circuit connection material, can reduce the electrode connection resistance each other of configuration relatively more fully, simultaneously, can keep adjacent electrode insulating properties each other on the same substrate more fully.
Circuit connection material of the present invention is preferably formed to membranaceous.Circuit connection material with this shape, the connection operation of the circuit electrode that can extremely easily dispose relatively.
The present invention also provides a kind of syndeton body, it has the 1st circuit block that forms the 1st circuit electrode on the interarea of the 1st substrate, on the interarea of the 2nd substrate, form the 2nd circuit electrode, and the 2nd circuit block of the relative configuration of the 2nd circuit electrode with the 1st circuit electrode, and be arranged between the 1st substrate and the 2nd substrate, and the circuit connecting section that connects the 1st circuit block and the 2nd circuit block, wherein, circuit connecting section contains the solidfied material of above-mentioned circuit connection material, and the 1st circuit electrode and the 2nd circuit electrode, low-melting-point metal contained in the conductive layer by conducting particles is electrically connected.
This syndeton body, make circuit connection material solidify the solidfied material of gained owing in circuit connecting section, have with above-mentioned feature, therefore can make the interelectrode sufficient conductivity of the sufficient insulating properties between adjacent electrode and relative configuration on the same substrate and deposit with high level, and can keep good insulation performance and good electrical conductivity for a long time.
The invention effect
According to the present invention, can provide a kind of connection reliability very excellent circuit connection material, it can make the interelectrode sufficient conductivity of the sufficient insulating properties between adjacent electrode and relative configuration on the same substrate and deposit with high level, and can keep good insulation performance and good electrical conductivity for a long time.In addition, can provide a kind of conducting particles that sort circuit connects material that is suitable for.Further, can provide a kind of connection reliability very excellent syndeton body, it contains the circuit connection material of the conducting particles with above-mentioned feature by use, thereby has fully improved the interelectrode conductivity of the sufficient insulating properties between adjacent electrode and relative configuration on the same substrate.
Description of drawings
[Fig. 1] is the schematic cross-section of a kind of preferred implementation of expression circuit connection material of the present invention.
[Fig. 2] is the schematic cross-section of a kind of preferred implementation of expression conducting particles of the present invention.
[Fig. 3] is the schematic cross-section of a kind of preferred implementation of expression syndeton body of the present invention.
[Fig. 4] is the operation schematic cross-section of an example of the manufacture method of expression syndeton body of the present invention.
[Fig. 5] is the schematic cross-section of expression as the semiconductor device of an example of syndeton body of the present invention.
Symbol description
The 10th, conducting particles; The 11st, insulation division; The 12nd, nuclear; 21a is the surface of nuclear; The 14th, conductive layer; 14a is the surface of conductive layer; The 16th, insulating barrier; The 20th, circuit block (the 1st circuit block); The 21st, circuit substrate (the 1st circuit substrate); 21a, 31a, 60a are interareas; The 22nd, electrode (the 1st electrode); The 24th, the syndeton body; The 26th, circuit connecting section; The 30th, circuit block (the 2nd circuit block); The 31st, circuit substrate (the 2nd circuit substrate); The 32nd, electrode (the 2nd electrode); The 50th, circuit connection material; The 52nd, adhesive composite; The 60th, substrate; The 61st, circuit pattern; The 40th, the semiconductor element connecting portion; The 80th, semiconductor element; The 100th, semiconductor device; The 114th, low-melting-point metal portion; The 116th, insulating resin portion.
Embodiment
Below, describe for preferred implementation of the present invention.
(circuit connection material)
Fig. 1 is the sectional view that schematically shows a kind of preferred implementation of circuit connection material of the present invention.The circuit connection material 50 of Fig. 1 has membranaceous shape.Circuit connection material with this shape, very difficult generation break, broken or problem such as be clamminess, and operation easily.Membranaceous circuit connection material 50 has as the adhesive composite 52 of insulation division and is dispersed in conducting particles 10 in the adhesive composite 52.
Membranaceous circuit connection material 50, for example, can adhesive composite be dissolved in the solvent by using common apparatus for coating, and the solution coat of having disperseed conducting particles 10 gained is on support (PET (PETG) film etc.), and under the temperature that adhesive composite does not solidify heated-air drying stipulated time and making.
The thickness of membranaceous circuit connection material 50 is preferably 10～50 μ m.When the thickness of membranaceous circuit connection material 50 is 10 μ m when above, can between opposed circuit block, fill the circuit connection material of q.s, have the tendency that can more fully keep the insulating properties between adjacent electrode on the same substrate.In addition,, when connecting, can fully get rid of the interelectrode adhesive composite of relative configuration, have the tendency of guaranteeing the conducting between opposite electrode easily when this thickness is 50 μ m when following.
With respect to the gross mass of circuit connection material 50, the content of conducting particles 10 is preferably 1～10 quality %.When this content ratio is 1 quality % when above, have the tendency that the conductivity between the opposite electrode after the syndeton body forms further improves.On the other hand, when this content ratio is 10 quality % when following, have the tendency that can further improve the interelectrode insulating properties of adjacent circuit on the same substrate.
The average grain diameter of conducting particles 10 is preferably 1～10 μ m.When the average grain diameter of conducting particles 10 is 1 μ m when above, has by eliminating the concavo-convex or interelectrode height tolerance of electrode surface, and obtain the tendency of better connection status easily.On the other hand, when the average grain diameter of conducting particles 10 is 10 μ m when following, even it is narrow to have an interelectrode spacing, electrode adjacent on same substrate also is difficult to produce the tendency of short circuit each other.
Conducting particles 10 can be that identical shaped, same size and the formed multiple particle of same material are mixed, and also can be that difformity, different size, the formed multiple particle of different materials are mixed.In the present embodiment, for example in the past conducting particles etc. can be combined with conducting particles 10, be dispersed in the adhesive composite 52.As conducting particles in the past, for example, can enumerate by formed materials such as metals such as Au, Ag, Ni, Cu, Co, scolding tin or carbon.In addition, can also use with the material of the dielectric glass of conductive materials coating, pottery, plastics etc. such as above-mentioned metal as in the past conducting particles.At this moment, in order to obtain enough conductivity, the metal layer thickness of coating is preferably more than the 0.1 μ m.
The adhesive composite 52 of circuit connection material 50 contains for example free-radical polymerised compound and radical polymerization atarting material.
The shape of circuit connection material is not particularly limited, and for example, can be to add organic solvents such as toluene, ethyl acetate in each composition of above-mentioned adhesive composite 52, and the pasty state that conducting particles 10 is disperseed.
(conducting particles)
Fig. 2 is the sectional view that schematically shows a kind of preferred implementation of conducting particles of the present invention.The conducting particles 10 of Fig. 2 has the insulating barrier 16 of the surperficial 14a of nuclear 12, the conductive layer 14 of the surperficial 12a of this nuclear of coating and this conductive layer 14 of coating.The shape of conducting particles 10 is not particularly limited, and for example can be roughly spherical.This conducting particles 10 is suitable as the conducting particles that circuit connection material is used.
" conducting particles " in this specification can not demonstrate conductivity under its particle state, and as long as its surface insulation layer fusion or softening and demonstrate conductivity.
Fusing point T as the material of examining 12 principal components
1mWith softening point T
1sThe two preferably all is the fusing point T than low-melting-point metal
2Higher temperature.In addition, in this manual, T
1Expression fusing point T
1mOr softening point T
1sWhen the material as nuclear 12 principal components is the material that do not show sharp melting point (noncrystal etc.), the T in the above-mentioned formula (1)
1The expression softening point.In addition, constitute the resin combination of insulating barrier 16, have than fusing point T
2Lower softening point T
3
Conducting particles 10 because the surperficial 14a of its conductive layer 14 is insulated layer 16 coating, even therefore conducting particles 10 is exposed to the oxidation atmosphere, also can fully be suppressed at its surperficial 14a and goes up the formation passivating film.Therefore, when connecting the heating of opposite electrode each other the time since insulating barrier 16 softening, flow, and expose conductive layer 14, then, at the fusing point T of low-melting-point metal
2Under near the temperature, conductive layer 14 fusions.At this moment, conductive layer 14 is its layer inside not only, and also fusion easily of its surperficial 14a, therefore, can make conducting particles 10 and the abundant driving fit of electrode.
The conductive layer 14 of conducting particles 10 demonstrates electrical conductivity.As the low-melting-point metal of conductive layer 14 principal components, preferably has 130～250 ℃ fusing point T
2As this low-melting-point metal, for example, can enumerate various eutectic alloys, non-eutectic low-melting alloy or independent metal.Specifically, can enumerate Pb82.6-Cd17.4 (248 ℃ of fusing points), Pb85-Au15 (215 ℃ of fusing points), Bi97-Na3 (218 ℃ of fusing points), Bi57-Sn43 (139 ℃ of fusing points), Sn (232 ℃ of fusing points), In97.2-Zn2.8 (144 ℃ of fusing points), In (157 ℃ of fusing points) etc.
The fusing point T of low-melting-point metal
2, more preferably 150～200 ℃.Thus, can improve the Material Selection degree of freedom of the resin combination and the adhesive composite of aftermentioned insulating barrier, the heating-up temperature in the time of can reducing the circuit block that connects configuration relatively simultaneously.Therefore, can reduce the thermal impact of syndeton body.
The thickness of conductive layer 14 is preferably 0.1～1 μ m.When the thickness of conductive layer 14 is 0.1 μ m when above, for example have the bonding area of conductive components such as the low-melting-point metal of fusion in the conductive layer 14 and electrode or the tendency that contact area can further enlarge.On the other hand,, use conducting particles 10 to connect the narrow electrode of spacings each other, also can more positively suppress the tendency of the short circuit between adjacent electrode on the same substrate even for example have when the thickness of conductive layer 14 is 1 μ m when following.
When the thickness of conductive layer 14 during,, therefore have the tendency that is difficult to obtain fully reduce the effect of connection resistance because conducting particles 10 is little with the contact area of the electrode that will be connected less than 0.1 μ m.On the other hand, when the thickness of conductive layer 14 surpasses 1 μ m, for example have when using the narrow electrode of these conducting particles 10 connection spacings each other, because conductive layer is hyper expanded on the direction vertical with compression aspect easily, therefore increased the tendency of the short circuit between adjacent electrode on the same substrate.
In addition, constitute the thickness of each layer of conducting particles 10, the average thickness of each layer when can be used as by the plane that cuts off by conducting particles 10 centers is obtained.This thickness can be confirmed by for example scanning electron microscopy etc.
Nuclear 12 is to have the fusing point T that likens to the low-melting-point metal of conductive layer 14 principal components
2Higher fusing point T
1mAnd/or softening point T
1sMaterial be principal component.As T
1m, be preferably T
2+ 20～T
2+ 2000 ℃.In addition, as T
1s, be preferably T
2+ 20～T
2+ 2000 ℃.As nuclear 12 material, can be the insulating properties material, also can be conductive material, and can contain insulating properties material and conductive material the two.As the insulating properties material, can enumerate natural goodses such as various plastics such as various rubber, polystyrene and epoxy resin, starch and cellulose such as styrene butadiene rubbers (SBR) and silicon rubber.By using the principal component of insulating properties material, can reduce the density contrast of conducting particles 10 and adhesive composite 52 as nuclear 12.Thus, can make the dispersiveness of conducting particles 10 in adhesive composite 52 better.
On the other hand, by using the principal component of conductive material,, therefore can further improve the conductivity of conducting particles 10 integral body because nuclear 12 also can pass through electric current as nuclear 12.As preferred conductive material, for example, can enumerate metals such as Au, Ag, Ni, Cu, Co, scolding tin or carbon etc.And can use metal level coating fusing point T with above-mentioned metal etc.
1mWith softening point T
1sAt least one fusing point T than above-mentioned low-melting-point metal
2The material of higher dielectric glass, pottery, plastics etc. is as nuclear 12.At this moment, consider that from the viewpoint that obtains enough conductivity the metal layer thickness of coating non-conductive material is preferably more than the 0.1 μ m.
In addition, " softening point " in this specification is meant vicat softening temperature or vitrification point.Vicat softening temperature is, the test film of given size is placed the heating bath, runs into the bath temperature that rises under the state of central portion at the end face of certain sectional area, and the temperature (JIS K7206) of end face when being absorbed in test film to certain depth.Vitrification point is, by the peak temperature of the measured loss tangent of Measurement of Dynamic Viscoelasticity (tan δ).
Nuclear 12 shape so long as can not constitute the shape of conducting particles 10, just is not particularly limited, and for example can be roughly spherical.
Constitute the resin combination of insulating barrier 16, as long as have fusing point T than the low-melting-point metal that constitutes conductive layer 14
2Lower softening point T
3, just be not particularly limited.As this resin combination, preferably contain thermoplastic resin and/or hot-melt resin.And, can also preferably use to have that thermal softening is selected or the base polymer of the hot-melt adhesive of fusing point or elastomer class.As this resin, for example, can enumerate polyethylene, ethylene copolymer, vinyl-vinyl acetate copolymer, polypropylene, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polyamide, polyester, the styrene-isoprene copolymer, styrene diethylene benzene copoly mer, ethylene-propylene copolymer, acrylic ester rubber, polyvinyl butyral resin, acrylonitrile-butadiene copolymer, styrene, the phenoxy group compound, solid epoxy, polyurethane etc., in addition, can also enumerate natural resin and synthetic resin such as terpene resin or rosin, chelating agents such as EDTA.These resins can use a kind separately, or will be used in combination more than 2 kinds.
The softening point T of the resin combination of insulating barrier 16
3, be preferably 130～250 ℃.
The thickness of insulating barrier 16 is preferably 0.01～0.5 μ m.When the thickness of insulating barrier 16 is 0.01 μ m when above, and the vertical direction of compression aspect (direction relative) with electrode between a plurality of conducting particless 10 of disposing, can further suppress the low-melting-point metal joint each other of fusion in the conductive layer 14.On the other hand, when the thickness of insulating barrier 16 is that 0.5 μ m is when following, when the insulating barrier 16 of extruding conducting particles 10, even very little pressure, therefore the surperficial 14a that also can expose conductive layer 14 on the part that is extruded at conducting particles 10 can further improve the conductivity between comparative electrode.
(adhesive composite)
Contained adhesive composite 52 in the circuit connection material 50 of present embodiment contains free-radical polymerised compound and radical polymerization initiator.
Free-radical polymerised compound is the compound with functional group of polymerization by free radical.As free-radical polymerised compound, can enumerate (methyl) acrylate compounds, maleimide compound, citraconimide compound, Na Dike imide compound (Na ジ イ ミ De, nadimide) etc.These materials can use a kind separately, or use mixing more than 2 kinds.In addition, free-radical polymerised compound can use with the free position of monomer or oligomer, also monomer and oligomer can be used in combination.
As (methyl) acrylate compounds, can enumerate (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) isopropyl acrylate, (methyl) isobutyl acrylate, ethylene glycol bisthioglycolate (methyl) acrylate, diethylene glycol two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylene glycol four (methyl) acrylate, 2-hydroxyl-1,3-two propylene acyloxy propane, 2,2-two [4-(acryloyl-oxy ylmethoxy) phenyl] propane, 2,2-two [4-(acryloyl-oxy base oxethyl) phenyl] propane, dicyclopentenyl (methyl) acrylate, three ring decyl (methyl) acrylate, three (acryloxy ethyl) isocyanuric acid ester, carbamate (methyl) acrylate, isocyanuric acid oxirane modification diacrylate etc.These materials can use a kind separately, or use mixing more than 2 kinds.Above-mentioned by making (methyl) acrylate compounds carries out radical polymerization, can obtain (methyl) acrylic resin.
Maleimide compound is the compound with at least one dimaleoyl imino.As maleimide compound, can enumerate phenyl maleimide, 1-methyl-2,4-dimaleimide benzene, N, N '-metaphenylene dimaleimide, N, N '-to the phenylene dimaleimide, N, N '-4,4-biphenylene dimaleimide, N, N '-4,4-(3,3-dimethyl biphenylene) dimaleimide, N, N '-4,4-(3, the 3-dimethyl diphenylmethane) dimaleimide, N, N '-4,4-(3,3-diethyl diphenyl methane) dimaleimide, N, N '-4,4-diphenyl methane dimaleimide, N, N '-4,4-diphenyl propane dimaleimide, N, N '-4,4-diphenyl ether dimaleimide, N, N '-4,4-diphenyl sulphone (DPS) dimaleimide, 2,2-two (4-(4-maleimide phenoxy group) phenyl) propane, 2,2-two (3-sec-butyl-3,4-(4-maleimide phenoxy group) phenyl) propane, 1,1-two (4-(4-maleimide phenoxy group) phenyl) decane, 4,4 '-cyclohexylidene-two (1-(4-maleimide phenoxy group) phenoxy group)-2-cyclohexyl benzene, 2,2-two (4-(4-maleimide phenoxy group) phenyl) HFC-236fa etc.These compounds can use a kind separately, or use mixing more than 2 kinds.
The citraconimide compound is the compound with at least one citraconimide base.As the citraconimide compound, can enumerate the phenyl citraconimide, 1-methyl-2,4-two citraconimide benzene, N, N '-metaphenylene two citraconimides, N, N '-to phenylene two citraconimides, N, N '-4,4-biphenylene two citraconimides, N, N '-4,4-(3,3-dimethyl biphenylene) two citraconimides, N, N '-4,4-(3, the 3-dimethyl diphenylmethane) two citraconimides, N, N '-4,4-(3,3-diethyl diphenyl methane) two citraconimides, N, N '-4,4-diphenyl methane two citraconimides, N, N '-4,4-diphenyl propane two citraconimides, N, N '-4,4-diphenyl ether two citraconimides, N, N '-4,4-diphenyl sulphone (DPS) two citraconimides, 2,2-two (4-(4-citraconimide phenoxy group) phenyl) propane, 2,2-two (3-sec-butyl-3,4-(4-citraconimide phenoxy group) phenyl) propane, 1,1-two (4-(4-citraconimide phenoxy group) phenyl) decane, 4,4 '-cyclohexylidene-two (1-(4-citraconimide phenoxy group) phenoxy group)-2-cyclohexyl benzene, 2,2-two (4-(4-citraconimide phenoxy group) phenyl) HFC-236fa etc.These compounds can use a kind separately, or use mixing more than 2 kinds.
The Na Dike imide compound is the compound with at least one Na Dike imide.As the Na Dike imide compound, can enumerate phenyl Na Dike acid imide, 1-methyl-2,4-two Na Dike acid imide benzene, N, N '-metaphenylene two Na Dike acid imides, N, N '-to phenylene two Na Dike acid imides, N, N '-4,4-diphenylene two Na Dike acid imides, N, N '-4,4-(3,3-dimethyl diphenylene) two Na Dike acid imides, N, N '-4,4-(3, the 3-dimethyl diphenylmethane) two Na Dike acid imides, N, N '-4,4-(3,3-diethyl diphenyl methane) two Na Dike acid imides, N, N '-4,4-diphenyl methane two Na Dike acid imides, N, N '-4,4-diphenyl propane two Na Dike acid imides, N, N '-4,4-diphenyl ether two Na Dike acid imides, N, N '-4,4-diphenyl sulphone (DPS) two Na Dike acid imides, 2,2-two (4-(4-Na Dike acid imide phenoxy group) phenyl) propane, 2,2-two (3-sec-butyl-3,4-(4-Na Dike acid imide phenoxy group) phenyl) propane, 1,1-two (4-(4-Na Dike acid imide phenoxy group) phenyl) decane, 4,4 '-cyclohexylidene-two (1-(4-Na Dike acid imide phenoxy group) phenoxy group)-2-cyclohexyl benzene, 2,2-two (4-(4-Na Dike acid imide phenoxy group) phenyl) HFC-236fa etc.These compounds can use a kind separately, or use mixing more than 2 kinds.
In addition, as free-radical polymerised compound, can use free-radical polymerised compound with phosphate ester structure.
Free-radical polymerised compound with phosphate ester structure is considered for the viewpoint of the bonding force of inorganic substances such as metal from improving adhesive composite, can preferably use.Use amount with free-radical polymerised compound of phosphate ester structure, all solids composition with respect to 100 mass parts adhesive composites 52 is preferably 0.1～30 mass parts, 0.5～10 mass parts more preferably, and 0.5～5 mass parts more preferably.Free-radical polymerised compound with phosphate ester structure, the reaction product that can be used as phosphoric anhydride and (methyl) acrylic acid 2-hydroxy methacrylate obtains.Specifically, can enumerate list (2-methacryloxyethyl) acid phosphoric acid ester, two (2-methacryloxyethyl) acid phosphoric acid ester (phosphate dimethylacrylate) etc.These materials can use a kind separately, or use mixing more than 2 kinds.
As free-radical polymerised compound, preferably (methyl) acrylate compounds and the free-radical polymerised compound with phosphate ester structure are used in combination.When using this combination, compare when use (methyl) acrylate compounds is with free-radical polymerised compound with phosphate ester structure separately respectively, can further improve the adhesive strength of adhesive composite.
As radical polymerization initiator,, just be not particularly limited so long as produce the compound of free radical by rayed and/or heating.As this radical polymerization initiator, the heating that is preferably rayed by 150～750nm and/or 80～200 ℃ produces the compound of free radical, specifically, is preferably peroxide, azo-compound etc.They can consider that purpose connects temperature, connect hours, storage stability etc. and suitably selection.
As peroxide, consider from the viewpoint of high response and storage stability, be preferably organic peroxide.In organic peroxide, the temperature of preferred 10 hour half-life (promptly, half-life is 10 hours a temperature) be more than 40 ℃, and the temperature of 1 minute half-life (promptly, half-life is 1 minute a temperature) be the organic peroxide below 180 ℃, and more preferably the temperature of 10 hour half-life is more than 50 ℃, and the temperature of 1 minute half-life is the organic peroxide below 170 ℃.In addition, be 10 seconds when following when the connect hours, consider from obtaining more fully the viewpoint of reactivity, the use level of radical polymerization initiator, solid constituent total amount with adhesive composite 52 is a benchmark, is preferably 1～20 quality %, and is preferably 2～15 quality % especially.
As organic peroxide, specifically, can enumerate diacyl peroxide, peroxy dicarbonate, peroxyester, ketal peroxide, dialkyl peroxide, hydrogen peroxide, silicyl peroxide etc.Wherein, usually with chloride ion in peroxyester, dialkyl peroxide, hydrogen peroxide, the silicyl peroxide and organic acid content, be reduced to below the 5000ppm.Thus, can reduce the organic acid that produces after the heating and decomposition, and suppress the corrosion of the electrode of circuit block, therefore especially preferably use.
As diacyl peroxide; can enumerate isobutyl peroxide, peroxidating 2; 4-dichloro-benzoyl, peroxidating 3,5,5-trimethyl acetyl, peroxidating decoyl, lauroyl peroxide, stearoyl, succinyl peroxide, benzoyl peroxidating toluene, benzoyl peroxide etc.
As peroxy dicarbonate, can enumerate di peroxy dicarbonate, diisopropyl peroxydicarbonate, two (4-tert-butylcyclohexyl) peroxy dicarbonate, two (peroxidating of 2-ethyoxyl methoxy base) two carbonic esters, two (peroxidating of 2-ethylhexyl) two carbonic esters, dimethoxy butyl peroxyization two carbonic esters, two (3-methyl-3-methoxyl group butyl peroxyization) two carbonic esters etc.
As peroxyester; can enumerate the cumenyl new decanoate ester peroxide; 1; 1; 3; 3-tetramethyl butyl new decanoate ester peroxide; 1-cyclohexyl-1-Methylethyl new decanoate ester peroxide; the own ester of peroxidating neodecanoic acid uncle; the peroxidating pivalic acid tert-butyl ester; 1; 1; 3; 3-tetramethyl butyl peroxidating-2 ethyl hexanoic acid ester; 2; 5-dimethyl-2; 5-two (peroxidating of 2-ethyl hexanoyl) hexane; 1-cyclohexyl-1-Methylethyl peroxidating-2 ethyl hexanoic acid ester; uncle's hexyl peroxidating-2 ethyl hexanoic acid ester; tert-butyl hydroperoxide-2 ethyl hexanoic acid ester; the tert-butyl hydroperoxide isobutyrate; 1; 1-two (tert-butyl hydroperoxide) cyclohexane; uncle's hexyl peroxidating isopropyl one carbonic ester; tert-butyl hydroperoxide-3; 5; 5-tri-methyl hexanoic acid ester; the tert-butyl hydroperoxide laurate; 2; 5-dimethyl-2,5-two (peroxidating of toluoyl base) hexane; tert-butyl hydroperoxide isopropyl monocarbonate; tert-butyl hydroperoxide-2-ethylhexyl monocarbonate; uncle's hexyl peroxide benzoate; tert-butyl hydroperoxide acetic acid esters etc.
As ketal peroxide, can enumerate 1,1-two (peroxidating of uncle's hexyl)-3,3,5-trimethyl-cyclohexane, 1,1-two (peroxidating of uncle's hexyl) cyclohexane, 1,1-two (tert-butyl hydroperoxide)-3,3,5-trimethyl-cyclohexane, 1,1-(tert-butyl hydroperoxide) cyclododecane, 2,2-two (tert-butyl hydroperoxide) decane etc.
As dialkyl peroxide, can enumerate α, α '-two (tert-butyl hydroperoxide) diisopropyl benzene, dicumyl peroxide, 2,5-dimethyl-2,5-two (tert-butyl hydroperoxide) hexane, tert-butyl group cumyl peroxide etc.
As hydrogen peroxide, can enumerate diisopropylbenzenehydroperoxide, cumene hydroperoxide etc.
As the silicyl peroxide, can enumerate tert-butyl group trimethyl silyl peroxide, two (tert-butyl group) dimetylsilyl peroxide, tert-butyl group trivinyl silicyl peroxide, two (tert-butyl group) divinyl silicyl peroxide, three (tert-butyl group) vinyl silicyl peroxide, tert-butyl group triallyl silicyl peroxide, two (tert-butyl group) diallyl silicyl peroxide, three (tert-butyl group) pi-allyl silicyl peroxide etc.
These radical polymerization initiators can use a kind separately, or will be used in combination more than 2 kinds, and can be used in combination with decomposition accelerating agent, inhibitor etc.
In addition, use these radical polymerization initiators of coatings such as polymer substance of polyurethane series, polyester system to make the material of its microencapsulation gained, can extend working time, therefore can preferably use.And,, as required, can also use the radical polymerization initiator that produces free radical by ultrasonic wave, electromagnetic wave etc. except producing by heating or rayed the radical polymerization initiator of free radical.In addition, for the corrosion of the electrode that suppresses circuit block, chloride ion and organic acid concentration contained in the radical polymerization initiator are preferably below the 5000ppm.Further, the radical polymerization initiator that the organic acid that more preferably produces after heating and decomposition is few.In addition, consider after 24 hours, preferably to have the above quality retention of 20 quality % in open placement under room temperature and the normal pressure from the viewpoint that improves the stability after adhesive composite solidifies.
In addition, as required, adhesive composite 52 can contain radical polymerization inhibitors such as quinhydrones, methyl ether quinhydrones in the scope of not damaging curable.
Adhesive composite 52 can contain free-radical polymerised compound thermosetting resin in addition.As this thermosetting resin, can enumerate epoxy resin.As epoxy resin, can enumerate bisphenol A type epoxy resin, bisphenol f type epoxy resin, bisphenol-s epoxy resin, phenol novolak type epoxy resin, cresols phenolic resin varnish type epoxy resin, bisphenol-A phenolic varnish type epoxy resin, bisphenol F phenolic varnish type epoxy resin, alicyclic epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, hydantoins type epoxy resin, isocyanuric acid ester type epoxy resin, aliphat chain epoxy resin etc.These epoxy resin can carry out halogenation, also can carry out hydrogenation.These epoxy resin can use a kind separately, or will be used in combination more than 2 kinds.
In addition, as above-mentioned curing agent for epoxy resin, can use the material that is used as epoxy curing agent usually.Specifically, can enumerate amine, phenols, anhydrides, imidazoles, dicyandiamide etc.Further, can also suitably use tertiary amines, the organophosphor based compound that is used as curing accelerator usually.
In addition,, except using above-mentioned curing agent, can also use sulfonium salt, salt compounded of iodine etc., carry out cationic polymerization as the method that makes the epoxy resin reaction.
Adhesive composite 52 can also contain thermoplastic resin.As thermoplastic resin, for example, can enumerate polyethylene, ethylene copolymer, vinyl-vinyl acetate copolymer, polypropylene, ethylene-acrylic acid copolymer, vinyl-acrylate copolymer, polyamide, polyester, styrene-isoprene copolymer, styrene diethylene benzene copoly mer, ethylene-propylene copolymer, acrylic ester rubber, Pioloform, polyvinyl acetal, acrylonitrile-butadiene copolymer etc.These resins can use a kind separately, or will be used in combination more than 2 kinds.By adjusting the kind and the cooperation ratio of thermoplastic resin, can adjust the softening point T of adhesive composite 52
4
Stress retentivity when giving film forming, cementability, curing, adhesive composite 52 can contain macromolecular compound.As macromolecular compound, can enumerate polyvinyl butyral resin, polyvinyl formal, mylar, polyamide, polyimide resin, xylene resin, phenoxy resin, polyurethane resin, urea resin etc.
Contained macromolecular compound in the adhesive composite 52 preferably has 10000～10000000 molecular weight.In addition, consider that from the thermal endurance viewpoint that improves circuit connection material macromolecular compound preferably uses free-radical polymerised functional group to carry out modification.Further, these macromolecular compounds can also contain carboxyl.The content of the above-mentioned macromolecular compound in the adhesive composite 52 is benchmark with the solid constituent total amount of adhesive composite 52, is preferably 2～80 quality %, 5～70 quality % more preferably, and 10～60 quality % more preferably.When the content of macromolecular compound is 2 quality % when above, has and to improve further that stress relaxes and the tendency of bonding force.On the other hand, when the content of macromolecular compound is 80 quality % when following, have can more abundant inhibition adhesive composite the tendency that descends of flowability.
Adhesive composite 52 can also contain suitable filler, softening agent, promoter, age resistor, colouring agent, fire retardant, coupling agent.
In the adhesive composite 52 of above explanation, with respect to 100 mass parts free-radical polymerised compounds, preferably contain 0.5～30 mass parts radical polymerization initiator, and more preferably contain 1.0～10 mass parts.When the content of radical polymerization initiator is 0.5 mass parts when above, have curing reaction and fully carry out, and solidify tendency more fully.On the other hand, when the content of radical polymerization initiator is 30 mass parts when following, have the tendency that adhesive composite has more excellent storage stability.
In addition, in the present embodiment, the softening point T of adhesive composite 52
4, preferably satisfy above-mentioned formula (2).As long as the softening point T of adhesive composite 52
4Softening point T than the insulating barrier 16 of conducting particles 10
3Low, then because at the circuit block that connects configuration relatively each other the time, adhesive composite flows easily, therefore can be electrically connected opposite electrode at an easy rate each other.Softening point T as adhesive composite 52
4, the morphological stability of the good fluidity of adhesive composite 52 and circuit connection material and the viewpoint of depositing are considered when connecting from making, and are preferably 130～150 ℃.
(the syndeton body of circuit block)
Fig. 3 is the sectional view that schematically shows a kind of preferred implementation of syndeton body of the present invention.Syndeton body 24 shown in Figure 3 has in the 1st circuit block 20 that is formed with a plurality of the 1st electrodes 22 on the interarea 21a of the 1st circuit substrate 21, circuit connecting section 26 between the interarea 31a of the 2nd circuit block 30 that is formed with a plurality of the 2nd electrodes 32 on the interarea 31a of the 2nd circuit substrate 31, the interarea 21a that is arranged on circuit substrate 21 and circuit substrate 31.In addition, on the interarea 21a of circuit substrate 21, can according to circumstances form insulating barrier (not shown).In addition, on the interarea 31a of circuit substrate 31, can according to circumstances form insulating barrier (not shown).
As circuit block 20 and 30,, just be not particularly limited as long as formed the electrode that needs electrical connection.Specifically, use ITO used in the LCD etc. be can enumerate and the glass of electrode or plastic base, printed substrate, ceramic wiring board, flex circuit application, semiconductor silicon chips etc. formed.They can be used in combination as required.Said, in the present embodiment, can use printed substrate or, have metal or ITO (tin indium oxide), silicon nitride (SiN such as copper, aluminium with headed by the material that forms by organic substances such as polyimides
x), silicon dioxide (SiO
2) wait this circuit block of inorganic with varied surface state.
The 1st electrode 22 and the 2nd electrode 32 are electrically connected and mechanical connection by low-melting-point metal portion 114.Low-melting-point metal portion 114 engages with electrode 22 and electrode 32 after conductive layer 14 fusions and solidifies.Therefore, low-melting-point metal portion 114 is with electrode 22 and electrode 32 driving fits.Therefore, the connection resistance between electrode 22 and the electrode 32 can be fully reduced, electrode 22 and electrode 32 can be firmly fixed simultaneously.Therefore, the electric current between electrode 22 and the electrode 32 is flowed smoothly, and can give full play to the function that circuit has.
In addition, by insulating resin portion 116, fixed electrode 22 and electrode 32 more firmly.Further, insulating resin portion 116 can suppress adjacent low-melting-point metal portion 114 conducting each other.Therefore, can fully suppress the short circuit of adjacent the 1st electrode 22 (32 at the 2nd electrodes).
This syndeton body 24 can fully reduce the connection resistance between electrode of opposite 22 and the electrode 32, can fully keep simultaneously the insulating properties of 32 at the insulating properties of 22 at the 1st adjacent electrode and adjacent the 2nd electrode.In addition, electrode of opposite 22 and electrode 32 firmly fix by circuit connecting section 26.
(manufacture method of syndeton body)
Then, with reference to accompanying drawing, the manufacture method of the syndeton body 24 of foregoing circuit parts is described.Fig. 4 is the operation sectional view of an example that schematically shows the manufacture method of syndeton body of the present invention.Fig. 4 (a)～(c) is the sectional view that schematically shows each operation in the manufacture method of syndeton of circuit block.
At first, prepare foregoing circuit parts 20 and membranaceous circuit connection material 50 (with reference to Fig. 4 (a)).Then, membranaceous circuit connection material 50 being placed in circuit block 20 has formed on the face (interarea 21a) of electrode 22.In addition, when for example membranaceous circuit connection material 50 is formed on the support (not shown), makes membranaceous circuit connection material 50 sides to circuit block 20, and be placed on the circuit block 20.At this moment, because circuit connection material 50 is membranaceous, therefore operation easily.Thus, can make circuit connection material 50 at an easy rate between circuit block 20 and circuit block 30, and can carry out the attended operation of circuit block 20 and circuit block 30 at an easy rate.
Then, on the direction of the arrow A of Fig. 4 (a), circuit connection material 50 is pressurizeed respectively, and on the direction of arrow B, circuit block 20 is pressurizeed, thus circuit connection material 50 temporarily is connected (with reference to Fig. 4 (b)) on the circuit block 20.Should temporarily connect, while can be undertaken by heating to pressurize.But heating-up temperature is the temperature that the adhesive composite in the circuit connection material 50 can not solidify, and for example is the lower temperature of temperature that produces free radical than radical polymerization initiator.
Then, shown in Fig. 4 (c), circuit block 30 is placed on the circuit connection material 50, makes electrode 32 towards circuit block 20.In addition, when the opposition side with circuit block 20 has support (not shown), peel off support, then circuit block 30 is placed on the circuit connection material 50 at for example circuit connection material 50.
Then, by for example heat first-class heater circuit connect material 50 on one side, on the direction of the arrow A of Fig. 4 (c) and arrow B, circuit block 20,30 is pressurizeed on one side, thereby formally connect.Heating-up temperature during formal the connection, be can fusion in the conducting particles 10 as the low-melting-point metal of conductive layer 14 principal components temperature, and be the temperature that radical polymerization initiator can produce free radical.Condition during as formal the connection, heating-up temperature can be 130～250 ℃, the connect hours can be for 1～60 second.Thus, at first, arrive softening point T
4Near temperature the time, adhesive composite 52 produces and flows.Then, at softening point T
3Near, the insulating barrier 16 of conducting particles 10 is softening, and demonstrates flowability.By on A direction and B direction circuit block 20,30 being pressurizeed respectively, adhesive composite 52, insulating barrier 16 begin to flow successively, and to expose with the low-melting-point metal on the surface of conducting particles be the conductive layer 14 of principal component.That is to say that when insulating barrier 16 was softening, by being pushed by the 1st and the 2nd electrode 22,32, insulating barrier 16 produced and flows, and, optionally expose the surperficial 14a (Fig. 2) of conductive layer 14 being extruded on the part of conducting particles 10.
When temperature further rises, at the fusing point T of low-melting-point metal
2Near, conductive layer 14 fusions.Because its fusion can be passed through low-melting-point metal, carries out the joint of the 1st electrode 22 and the 2nd electrode 32.In addition, this joint can according to circumstances be undertaken by being engaged with each other of low-melting-point metal of a plurality of conducting particless between the 1st electrode 22 and the 2nd electrode 32.In addition, meanwhile, conductive layer 14 pushes by electrode 22 and electrode 32 and produces mobilely, and being extruded on the part of conducting particles 10, optionally exposes nuclear 12 surperficial 12a (Fig. 2).Thus, electrode 22,32 directly contacts with the nuclear 12 of conducting particles.In other words, the 1st electrode 22 and the 2nd electrode 32 are connected with nuclear 12 by low-melting-point metal portion 114.
In addition, in adhesive composite 52, radical polymerization initiator produces free radical, and causes the polymerization of free-radical polymerised compound.Like this, the processing that is cured of the adhesive composite of circuit connection material 50, and formally connect.As a result, can obtain the syndeton body 24 of circuit block shown in Figure 3.In addition, the formal condition that connects can suitably be selected according to the composition of adhesive composite, the material of circuit block, the purposes of syndeton body etc.In addition, carrying out the back as required after formal the connection solidifies.
Because conducting particles 10 has nuclear 12, so it is difficult between the 1st electrode 22 and the 2nd electrode 32 crowded broken fully.Therefore can suppress the low-melting-point metal of fusion thus and on the direction vertical, expand each other, can prevent the joint of 10 of a plurality of conducting particless on this direction with compression aspect.Further,, be insulated layer 16 coating, so can prevent the conducting of 10 of a plurality of conducting particless on the direction vertical with compression aspect because the surperficial 14a (Fig. 2) of conductive layer 14 goes up the part except above-mentioned exposed portions serve.
As mentioned above, when making the syndeton body 24 of circuit block, the 1st relative electrode 22 and the connection resistance between the 2nd electrode 32 can be fully reduced, the insulating properties between the electrode adjacent on the same substrate 22, between the electrode 32 can be fully improved simultaneously.
By the syndeton body of above-mentioned formal connection gained, be under the abundant little state in the distance between electrode 22 and the electrode 32, have the insulation division 11 (Fig. 3) that adhesive composite solidifies.In addition, because conductive layer 14 fusions, and engaging back curing with electrode 22 and electrode 32, so circuit block 20 is connected by circuit connecting section 26 securely with circuit block 30.In the syndeton 24 of gained circuit block, circuit connecting section 26 is made of the solidfied material that foregoing circuit connects material, so circuit connecting section 26 is enough high with respect to the adhesive strength of the 1st circuit block 20 and the 2nd circuit block 30.
In addition, because conductive layer 14 is a principal component with the low-melting-point metal, the technological temperature in the time of therefore can reducing the syndeton 24 of making circuit block.Thus, the parts of the syndeton 24 of forming circuit parts do not need the thermal endurance of the sort of degree, therefore, can fully enlarge the range of choice of this component materials.
(the variation example of syndeton body)
Fig. 5 is the sectional view that schematically shows as the semiconductor device of an example of syndeton body of the present invention.Semiconductor device 100 has semiconductor element 80 and supports the substrate 60 of semiconductor element 80.Between semiconductor element 80 and substrate 60, be provided with semiconductor element link 40 (circuit connecting section) with they electrical connections and mechanical connection.Semiconductor element link 40 can be arranged on the interarea 60a of substrate 60.Semiconductor element 80 can be arranged on the semiconductor element link 40.
On substrate 60, a plurality of circuit patterns 61 have been formed.Circuit pattern 61 and semiconductor element 80 relative configurations.Semiconductor element link 40 is arranged between semiconductor element 80 and the substrate 60, and they are electrically connected and mechanical connection.
Constituent material as semiconductor element 80, be not particularly limited, can enumerate IV family semi-conducting material, GaAs, InP, GaP, InGaAs, InGaAsP, AlGaAs, InAs, GaInP, AlInP, AlGaInP, GaNAs, GaNP, GaInNAs, GaInNP, GaSb, InSb, GaN, AlN, II-VI group iii v compound semiconductor materials such as III-V group iii v compound semiconductor material, HgTe, HgCdTe, CdMnTe, CdS, CdSe, MgSe, MgS, ZnSe, ZeTe such as InGaN, InNAsP, CuInSe various materials such as (CIS) such as silicon, germanium.
In semiconductor device 100, semiconductor element 80 and circuit pattern 61 are electrically connected by low-melting-point metal portion 114.Therefore, can fully reduce the resistance that is connected of semiconductor element 80 and 61 of circuit patterns.Therefore, the electric current between semiconductor element 80 and the circuit pattern 61 is flowed smoothly, and can give full play to the function that semiconductor element 80 is had.In addition, because semiconductor element link 40 has excellent anisotropic conductive, therefore can fully keep the insulating properties between the adjacent circuit pattern 61.Thus, can fully be suppressed between the adjacent circuit pattern 61 and produce short circuit.
In semiconductor element link 40, because low-melting-point metal portion 114 and semiconductor element 80 and circuit pattern 61 have produced metal bond, therefore the adhesive strength of semiconductor element link 40 can be fully improved, and this state can be kept for a long time for semiconductor element 80 and substrate 60.Therefore, can fully improve the long-term reliability of semiconductor element 80 and 60 electrical characteristics of substrate.
More than, be illustrated for preferred implementation of the present invention, but the present invention is not limited to above-mentioned execution mode fully.
For example, membranaceous circuit connection material 50 can also be that Tg (vitrification point) by adhesive composite when solidifying is the different layer formed sandwich construction (not shown) more than 2 kinds more than 5 ℃.
Embodiment
Below, based on embodiment and comparative example, the present invention is carried out more specific description, but the present invention is not limited to following embodiment fully.In addition, each the softening point (T shown in following
1s, T
3, T
4), the thermo-mechanical analysis device TMA/SS6000 that is to use Jinggong Co., Ltd to make under compact model or stretch mode, measures the vitrification point of gained with the programming rate of 5 ℃/min.
(embodiment 1)
(1) making of conducting particles
＜pre-treatment 〉
(You Niji can (strain) make softening point T to strong agitation コ ニ ベ Star Network ス C type in methyl alcohol for spherical phenolic resins, average grain diameter 5 μ m
1s: 180 ℃), have both the pre-treatment of degreasing and roughening.Then, by isolated by filtration methyl alcohol, obtain having carried out the macromolecule nuclear material (nuclear) of pre-treatment.
＜activation 〉
The macromolecule nuclear material of gained is dispersed in サ one キ Star ト プ レ Star プ 3316 (PdCl
2+ HCl+SnCl
2Be activation processing liquid, Japanese エ レ Network ト ロ プ レ one テ イ Application グ エ Application ジ ニ ア one ズ (strain) makes, trade name), stirred 20 minutes down at 25 ℃, carry out activation processing.Then, washing is also filtered, and obtains the macromolecule nucleome of surface active.
＜no electrolysis Ni plating 〉
The macromolecule nucleome of gained is immersed in Block Le one シ ユ one マ (no electrolysis Ni plating bath, solution ability 300 μ dm
2/ l, Japanese カ ニ ゼ Application (strain) make, trade name) in, 90 ℃ of following strong agitation 30 minutes.Then, washing obtains the macromolecule nucleome carries out coating by nickel plating Ni coating particle.
＜no electrolysis Au plating 〉
On the surface of Ni coating particle, carry out the displacement plating of Au.Use エ レ Network ト ロ レ ス プ レ Star プ (no electrolysis Au plating bath, Japanese エ レ Network ト ロ プ レ one テ イ Application グ エ Application ジ ニ ア one ズ (strain) makes, trade name) as electroplate liquid, and under 90 ℃, carry out 30 minutes electroplating processes.Then, water carefully washs, and carries out 2 hours drying under 90 ℃, obtains Ni-Au coating particle.Use this Ni-Au coating particle as nuclear.Ni-Au coating particle has the thin metal layer of Ni 0.3 μ m/Au0.05 μ m.The thickness of Ni plating and Au plating is calculated by the scanning electron microscope image in particle cross section.In addition, this metal foil layer has the fusing point more than 1000 ℃.
＜scolding tin plating 〉
Use the tubbiness electroplanting device, on the surface of the Ni-Au of gained coating particle, implement SnPb63 plating (43%Sn-57%Bi, melt temperature (T
2) be 139 ℃), obtain SnBi coating particle.The section of the SnBi coating particle that use scanning electron microscopy (SEM) observation post gets, the thickness of scolding tin coating is 3 μ m.
The formation of＜insulating barrier 〉
As described below, on the surface of the SnBi of gained coating particle, form insulating barrier, make conducting particles.As the material of insulating barrier, modulation contains 1 quality % パ ラ プ レ Application P-25M (TPU(Thermoplastic polyurethanes), softening point T
3: 130 ℃, Japanese エ ラ ス ト ラ Application (strain) is made, trade name) dimethyl formamide (DMF) solution.In this solution, add SnBi coating particle, and stir.Then, (ヤ マ ト science (strain) is made, trade name: the GA-32 type), carry out 10 minutes spray dryings under 100 ℃, obtain conducting particles to use spray dryer.The result who uses scanning electron microscopy (SEM) to observe the cross section is that the average thickness of this conducting particles insulating barrier is about 1 μ m.
(2) making of circuit connection material
In the following order, make membranaceous circuit connection material.At first, (ユ ニ オ Application カ one バ イ De Co., Ltd. makes with phenoxy resin, trade name: PKHC, mean molecule quantity: (boiling point is 110.6 ℃ 45000) to be dissolved in by quality ratio toluene, the SP value is 8.90)/(boiling point is 77.1 ℃ to ethyl acetate, the SP value is 9.10)=50/50 mixed solvent in, preparing solid constituent is the phenoxy resin dispersion liquid of 40 quality %.
Prepare the hydroxyl ethylene glycol dimethacrylate (Kyoeisha Chemical Co., Ltd. makes, trade name: 80MFA) and the phosphate dimethylacrylate (Kyoeisha Chemical Co., Ltd. makes, trade name: P-2M), as free-radical polymerised compound.
Prepare two-2-ethylhexyl peroxy dicarbonate (NOF Corp makes, trade name: パ one ロ イ Le OPP), as radical polymerization initiator.
Each material with above-mentioned preparation is scaled to the solid constituent amount, and cooperates according to following mass ratio, further adds the conducting particles of making as mentioned above again, and makes its dispersion, obtains adhering liquid.In addition, the addition of conducting particles totally is 3 quality % with respect to the circuit connection material of gained.
·PKHC：50
·80MFA：50
·P-2M：10
パ one ロ イ Le OPP:5
Then, the use apparatus for coating is coated on the adhering liquid of gained on the fluororesin film that thickness is 80 μ m, and carries out 10 minutes heated-air drying under 70 ℃, and obtaining thickness is the membranaceous circuit connection material of 20 μ m.The membranaceous circuit connection material of gained has at room temperature demonstrated sufficient flexibility.
(3) making of syndeton body
Then, it is that 25 μ m, spacing are that 50 μ m, thickness are flexible substrate (super LSI system house of the Co., Ltd. Hitachi manufacturing of the Au plating circuit of 8 μ m that preparation has live width, COF TEG_50A) and have the semiconductor element of the Au projection that spacing is 50 μ m (projection size is 30 μ m * 100 μ m) (super LSI system house of Co., Ltd. Hitachi makes, trade name: JTEG Phase6_50) trade name:.Between flexible substrate and semiconductor element, the membranaceous circuit connection material that configuration is made as mentioned above (is untreated, width is 2mm), and use hot pressing device (mode of heating: continue hot type, Dongli Engineering Co., Ltd makes), under 160 ℃, 3MPa, carry out the heating and the pressurization in 15 seconds.In addition, on the flexible substrate direction relative, pressurize with semiconductor element.So, make the syndeton body (the syndeton body of semiconductor element/flexible substrate) of circuit block.
(embodiment 2)
Preparation has the Au projection that spacing is 130 μ m, and (projection size: (super LSI system house of Hitachi makes semiconductor element 70 μ m * 70 μ m), JTEG Phase0_GB) and have FR-4 substrate (manufacturing of super LSI system house of Hitachi, a trade name: JKIT TypeII) that spacing is the Au plating pad of 130 μ m trade name:.Then, configuration and the embodiment 1 same membranaceous circuit connection material of making (are untreated between FR-4 substrate and semiconductor element, 2.5mm * 2.5mm), and use hot pressing device (mode of heating: continue hot type, Dongli Engineering Co., Ltd makes), under 160 ℃, 3MPa, carry out the heating and the pressurization in 15 seconds.So, make the syndeton body (the syndeton body of semiconductor element/FR-4 substrate) of circuit block.
(comparative example 1)
Except not carrying out scolding tin plating and the embodiment 1 same conducting particles of making.The result who uses scanning electron microscopy (SEM) to observe the cross section is that the average thickness of this conducting particles insulating barrier is identical with embodiment 1, is about 1 μ m.Then, use this conducting particles and embodiment 1 same, make circuit connection material, obtain syndeton body (the syndeton body of semiconductor element/flexible substrate).
(comparative example 2)
In using comparative example 1 conducting particles of made as the conducting particles and embodiment 2 same, make circuit connection material, obtain syndeton body (the syndeton body of semiconductor element/FR-4 substrate).
(comparative example 3)
Except do not form the insulating barrier and embodiment 1 same, make conducting particles.Same with embodiment 1, make circuit connection material, obtain syndeton body (the syndeton body of semiconductor element/flexible substrate).
The mensuration of＜connection resistance 〉
Measure the resistance that is connected between the relative circuit block of the syndeton body of made in the various embodiments described above and each comparative example.Specifically, use ADVANTEST system DIGITAL MULTIMETERR6871E, measure the connection resistance that connects all electrode gained circuit of each syndeton body by daisy chain (daisy chain).At this moment, measuring electric current is 1mA.Measurement result is as shown in table 1.Use conducting particles inside to have the situation of the circuit connection material (embodiment 1,2) of low-melting-point metal layer, do not have low-melting-point metal layer with use, and only guarantee that by the contact of refractory metal (Au, Ni) situation of the circuit connection material (comparative example 1,2) of conducting compares, demonstrated low connection resistance.
＜heatproof cycle life 〉
Estimate the heatproof cycle life of the syndeton body of made in the various embodiments described above and each comparative example.The temperature range of measuring is limited to-40 ℃ under being, on be limited to 125 ℃, and the retention time under lower limit and ceiling temperature is 15 minutes.Be heated to temperature upper limit from normal temperature, be cooled to lowest temperature again, get back to normal temperature then, the operation that this is a series of repeats this circulation as 1 circulation, estimates the heatproof cyclicity.Per 100 circulations are taken out the syndeton body measurement and are connected resistance from the temperature cycling test device, and measure up to generation open circuit (オ one プ Application) bad period, and estimate thus.
Measurement result is as shown in table 1.Use conducting particles inside to have the situation of the syndeton body (embodiment 1 and 2) of the circuit connection material of low-melting-point metal layer, with do not have low-melting-point metal layer, and only guarantee that by the contact of refractory metal (Au, Ni) situation of the circuit connection material (comparative example 1 and 2) of conducting compares, can confirm that its heatproof cycle life is longer.In addition, use the situation (comparative example 3) of the conducting particles that does not have insulating barrier, when making the syndeton body, the welding each other of adjacent conductive particle, further, adjacent electrode is conducting each other, produces short circuit (short).Therefore, can't estimate the heatproof cyclicity.
[table 1]
| Embodiment 1 | Embodiment 2 | Comparative example 1 | Comparative example 2 | Comparative example 3 | |
| The structure of conducting particles (annotating 1) | Nuclear-NiAu-SnBi-insulating barrier | Nuclear-NiAu-SnBi-insulating barrier | Nuclear-NiAu-insulating barrier | Nuclear-NiAu-insulating barrier | Nuclear-NiAu-SnBi- |
| Connect resistance (Ω) | ??150 | ??100 | ??190 | ??150 | Produce short circuit |
| Heatproof cyclicity (inferior) | ??＞1000 | ??＞1000 | ??500 | ??600 | ??- |
(annotate 1) expression particle is internally to the layer structure of outside.
Industrial applicibility
According to the present invention, can provide a kind of connection reliability very excellent circuit connection material, it can keep good insulating properties and good electric conductivity for a long time. In addition, can provide a kind of conducting particles that is suitable for the sort circuit connecting material.
Claims (8)
1. conducting particles, it has:
With fusing point or softening point is T
1(℃) material as the nuclear of principal component,
The surface of this nuclear of coating and be T with the fusing point
2(℃) low-melting-point metal as the conductive layer of principal component,
The surface of this conductive layer of coating and be T by softening point
3(℃) the formed insulating barrier of resin combination,
Described T
1, T
2And T
3Satisfy following formula (1).
T
1＞T
2＞T
3????????(1)
2. conducting particles as claimed in claim 1, wherein, described T
2It is 130～250 ℃.
3. a circuit connection material is used to connect opposite one another the 1st electrode and the 2nd electrode, and it contains adhesive composite and the claim 1 or the 2 described conducting particless that are dispersed in this adhesive composite.
4. circuit connection material as claimed in claim 3, wherein, described adhesive composite contains thermoplastic resin, and when the softening point of described adhesive composite be T
4The time, satisfy following formula (2).
T
1＞T
2＞T
3＞T
4????(2)
5. circuit connection material as claimed in claim 3, wherein, described adhesive composite contains thermosetting resin, described adhesive composite is to have mobile material by heating, and is that described the 1st electrode and described the 2nd electrode engage the material that solidify the back with the described conductive layer that is principal component with described low-melting-point metal.
6. as each the described circuit connection material in the claim 3～5, wherein, the content of described conducting particles is 1～10 quality %.
7. as each the described circuit connection material in the claim 3～6, it is shaped as membranaceous.
8. syndeton body, it has:
On the interarea of the 1st substrate, be formed with the 1st circuit electrode the 1st circuit block,
On the interarea of the 2nd substrate, be formed with the 2nd circuit electrode, and the 2nd circuit block of the relative configuration with described the 1st circuit electrode of described the 2nd circuit electrode,
Be arranged between described the 1st substrate and described the 2nd substrate, and connect the circuit connecting section of described the 1st circuit block and described the 2nd circuit block,
Wherein, described circuit connecting section contains the solidfied material of each the described circuit connection material in the claim 3～7, and described the 1st circuit electrode and described the 2nd circuit electrode are that contained described low-melting-point metal is electrically connected in the described conductive layer by described conducting particles.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007276363 | 2007-10-24 | ||
| JP2007-276363 | 2007-10-24 | ||
| JP2008-231035 | 2008-09-09 | ||
| JP2008231035A JP5141456B2 (en) | 2007-10-24 | 2008-09-09 | Circuit connection material and connection structure |
| PCT/JP2008/069142 WO2009054410A1 (en) | 2007-10-24 | 2008-10-22 | Conductive particle, circuit connecting material, and connection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101836333A true CN101836333A (en) | 2010-09-15 |
Family
ID=40815584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880112368A Pending CN101836333A (en) | 2007-10-24 | 2008-10-22 | Conductive particle, circuit connecting material, and connection structure |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP5141456B2 (en) |
| KR (2) | KR101254474B1 (en) |
| CN (1) | CN101836333A (en) |
| TW (1) | TWI386953B (en) |
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| CN109727701A (en) * | 2017-10-27 | 2019-05-07 | 玮锋科技股份有限公司 | Eutectic formula anisotropic conductive film and production method |
| CN113068322A (en) * | 2021-02-11 | 2021-07-02 | 赵行 | Novel wiring method for flexible circuit board |
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| JP5421667B2 (en) * | 2009-06-22 | 2014-02-19 | 積水化学工業株式会社 | Conductive fine particles, anisotropic conductive material, and connection structure |
| KR101225497B1 (en) * | 2009-11-05 | 2013-01-23 | (주)덕산테코피아 | Conductive paste and the manufacturing method thereof and the electric device comprising thereof |
| CN104877611B (en) * | 2009-11-17 | 2020-04-10 | 日立化成株式会社 | Circuit connecting material, connection structure using same, temporary pressure bonding method, and application |
| JP5740173B2 (en) * | 2011-02-17 | 2015-06-24 | 積水化学工業株式会社 | Connection structure and method for manufacturing connection structure |
| CN103843469B (en) | 2011-09-30 | 2017-05-03 | 株式会社村田制作所 | Electronic device, joining material, and method for producing electronic device |
| JP6328996B2 (en) * | 2013-05-23 | 2018-05-23 | 積水化学工業株式会社 | Conductive paste, connection structure, and manufacturing method of connection structure |
| JP6095639B2 (en) * | 2014-12-26 | 2017-03-15 | 株式会社タムラ製作所 | Anisotropic conductive paste and method for manufacturing printed wiring board using the same |
| JP2017098077A (en) * | 2015-11-24 | 2017-06-01 | デクセリアルズ株式会社 | Anisotropic conductive film and connection method |
| JP6217836B1 (en) * | 2016-12-07 | 2017-10-25 | 千住金属工業株式会社 | Nuclear material, semiconductor package and bump electrode forming method |
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| JP2984921B2 (en) * | 1997-01-20 | 1999-11-29 | 三洋化成工業株式会社 | Hot melt adhesive |
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| JP4380327B2 (en) * | 2004-01-07 | 2009-12-09 | 日立化成工業株式会社 | Circuit connection material, film-like circuit connection material using the same, circuit member connection structure, and manufacturing method thereof |
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- 2008-09-09 JP JP2008231035A patent/JP5141456B2/en not_active Expired - Fee Related
- 2008-10-22 KR KR1020127033932A patent/KR101254474B1/en not_active IP Right Cessation
- 2008-10-22 KR KR1020097016723A patent/KR20090100447A/en not_active Application Discontinuation
- 2008-10-22 CN CN200880112368A patent/CN101836333A/en active Pending
- 2008-10-24 TW TW097140920A patent/TWI386953B/en not_active IP Right Cessation
-
2012
- 2012-08-23 JP JP2012184063A patent/JP2013030485A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109727701A (en) * | 2017-10-27 | 2019-05-07 | 玮锋科技股份有限公司 | Eutectic formula anisotropic conductive film and production method |
| CN113068322A (en) * | 2021-02-11 | 2021-07-02 | 赵行 | Novel wiring method for flexible circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013030485A (en) | 2013-02-07 |
| KR101254474B1 (en) | 2013-04-12 |
| KR20130018950A (en) | 2013-02-25 |
| JP2009123684A (en) | 2009-06-04 |
| TW200937452A (en) | 2009-09-01 |
| KR20090100447A (en) | 2009-09-23 |
| TWI386953B (en) | 2013-02-21 |
| JP5141456B2 (en) | 2013-02-13 |
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Application publication date: 20100915 |