CN101834239A - Light-emitting diode with reflecting and low-impedance contact electrode and manufacturing method thereof - Google Patents
Light-emitting diode with reflecting and low-impedance contact electrode and manufacturing method thereof Download PDFInfo
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- CN101834239A CN101834239A CN200910132057A CN200910132057A CN101834239A CN 101834239 A CN101834239 A CN 101834239A CN 200910132057 A CN200910132057 A CN 200910132057A CN 200910132057 A CN200910132057 A CN 200910132057A CN 101834239 A CN101834239 A CN 101834239A
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Abstract
The invention relates to a light-emitting diode with a reflecting and low-impedance contact electrode and a manufacturing method thereof. The manufacturing method comprises the following steps: depositing one or more n-type III-nitride semiconductor layers on a substrate, wherein, one or more n-type III-nitride semiconductor layers have a first surface and a second surface; depositing one or more III-nitride active layers on the first surface of one or more n-type III-nitride semiconductor layers; depositing one or more p-type III-nitride semiconductor layers on one or more III-nitride active layers; depositing an in-situ forming layer on one or more p-type III-nitride semiconductor layers; and finally depositing one or more reflective metal layers on the in-situ forming layer. The invention further relates to an III-nitride light-emitting diode.
Description
Technical field
The present invention system especially is light-emitting diode and the manufacture method thereof that has reflection and low-impedance contact electrode about a kind of about a kind of light-emitting diode and manufacture method thereof.
Background technology
In daily life, the importance of light-emitting diode (LEDs, light emitting diodes) just grows with each passing day.On various applications, all can find the light-emitting diode trace, for example aspect such as the communication equipment of portable phone and other electronic installations.In recent years, for video display, optics holder, illumination, medical equipment, (for example: demand gallium nitride) significantly increases to be applied in the nitride diode material of photoelectric field.Conventional blu-ray light-emitting diodes piping forms by using nitride semi-conductor material, for example: gallium nitride (GaN), aluminium gallium nitride alloy (AlGaN), InGaN (InGaN) and aluminum indium nitride gallium (AlInGaN).The mode of prolonging is formed on the non-conductive sapphire substrate beyond the semiconductor series of strata of the light-emitting diode assembly of most of aforementioned type.Because sapphire substrate is an electrical insulator, so stream passes through light-emitting diode with drive current can't directly to form electrode on sapphire substrate, and actual practice is that electrode is done directly to contact with a p type semiconductor layer and a n type semiconductor layer respectively, to finish the making of light-emitting diode assembly.
Yet the non-conductive character of configuration of this kind electrode and sapphire substrate can cause great restriction to the device operation.For example, need on the p type semiconductor layer, form the translucent face that connects, so that electric current is spread n type electrode by p type electrode.Because the reflection and the absorption of light-emitting diode inside, the translucent face that connects can lower the luminous intensity that the self-luminous diode apparatus is emitted.On the other hand, p type and n type electrode not only can cause obstruction to light, also can reduce the light-emitting area of light-emitting diode assembly simultaneously.In addition, because sapphire substrate is a heat insulator, so the heat that is produced in the device operating process can't carry out efficiently radiates heat by sapphire substrate.Therefore, the restriction of known semiconductor structure comprises: (1) since electrode the position is set, from n type electrode stream pass through to the electric current of p type electrode be not to be evenly distributed; And (2) because sapphire is heat and electrical insulator, so heat can be accumulated in the operating process in device.
When p type electrode and n type electrode are applied in forward voltage (forward voltage), but just conducting light-emitting diode, and electric current can be from p type electrode stream to active layer.Because the resistivity height of traditional p-GaN contact layer, thereby it is not good to cause electric current to scatter (current spreading) effect.Again, because the tack between p type semiconductor layer and the reflective metal layer is relatively poor, so cause the problem of peeling off through regular meeting.
Summary of the invention
In order to overcome the problems referred to above, of the present invention one implements the sample attitude for a kind of manufacturing method for LED with reflection and low-impedance contact electrode is provided, comprise the following steps: deposition one layer or more n type III nitride semiconductor layer on substrate, wherein this one layer or more n type III nitride semiconductor layer has first surface and second surface; Deposition one layer or more III group-III nitride active layer on the first surface of this one layer or more n type III nitride semiconductor layer; Deposition one layer or more p type III group-III nitride semiconductor on one layer or more III group-III nitride active layer; On one layer or more p type III nitride semiconductor layer, form original position (in-situ) cambium layer; And deposit the one layer or more reflective metal layer on the cambium layer in position.This manufacture method more comprises: deposition one layer or more metal level on the one layer or more reflective metal layer; Remove substrate; And on the second surface of n type III nitride semiconductor layer, form one layer or more n type electrode.In addition, can pass through Optical Electro-Chemistry (PEC, photoelectrochemical) oxidation and etching processing, and make the second surface of n type III nitride semiconductor layer have (non-ordered) out of order erosion line kenel, take out efficient with the light that increases light-emitting diode.
Of the present invention another implemented the sample attitude for a kind of manufacturing method for LED with reflection and low-impedance contact electrode is provided, comprise the following steps: deposition one layer or more n type III nitride semiconductor layer on substrate, wherein this one layer or more n type III nitride semiconductor layer has first surface and second surface; Deposition one layer or more III group-III nitride active layer on the first surface of this one layer or more n type III nitride semiconductor layer; Deposition one layer or more p type III group-III nitride semiconductor on one layer or more III group-III nitride active layer; On one layer or more p type III nitride semiconductor layer, form the original position cambium layer; Form a plurality of irrigation canals and ditches, to define one or more table top; Deposition one layer or more reflective metal layer above the original position cambium layer of table top; Deposition one layer or more non-conductive layer is to cover each table top; And the non-conductive layer that removes a part, to expose the surface of reflective metal layer.This manufacture method more comprises: deposition one layer or more metal level, to cover table top and to fill up irrigation canals and ditches; Remove substrate; And on the second surface of n type III nitride semiconductor layer, form one layer or more n type electrode.In addition, can be by photo-electro chemical oxidation and etching processing, and make the second surface of n type III nitride semiconductor layer have erosion line kenel out of order, take out efficient with the light that increases light-emitting diode.
It is of the present invention that another implements the sample attitude for a kind of manufacturing method for LED with reflection and low-impedance contact electrode is provided again, comprise the following steps: deposition one layer or more n type III nitride semiconductor layer on substrate, wherein this one layer or more n type III nitride semiconductor layer has first surface and second surface; Deposition one layer or more III group-III nitride active layer on the first surface of this one layer or more n type III nitride semiconductor layer; Deposition one layer or more p type III group-III nitride semiconductor on one layer or more III group-III nitride active layer; On one layer or more p type III nitride semiconductor layer, form the original position cambium layer; Deposition one layer or more reflective metal layer above the original position cambium layer of table top; Form a plurality of irrigation canals and ditches, to define one or more table top; Deposition one layer or more non-conductive layer is to cover each table top; And the non-conductive layer that removes a part, to expose the surface of reflective metal layer.This manufacture method more comprises: deposition-or the multiple layer metal layer, to cover table top and to fill up irrigation canals and ditches; Remove substrate; And on the second surface of n type III nitride semiconductor layer, form one layer or more n type electrode.In addition, can be by photo-electro chemical oxidation and etching processing, and make the second surface of n type III nitride semiconductor layer have erosion line kenel out of order, take out efficient with the light that increases light-emitting diode.
Of the present invention another implements the sample attitude for a kind of III group-III nitride light-emitting diode is provided again, and comprising: one layer or more n type III nitride semiconductor layer has first surface and second surface; One layer or more III group-III nitride active layer is arranged on the first surface of this one layer or more n type III nitride semiconductor layer; One layer or more p type III nitride semiconductor layer is arranged on the one layer or more III group-III nitride active layer; Original position cambium layer, original position (in-situ) are formed on the one layer or more p type III nitride semiconductor layer; And the one layer or more reflective metal layer, be arranged on the original position cambium layer.This light-emitting diode more comprises: the one layer or more metal level is arranged on the reflective metal layer; And one layer or more n type electrode, be arranged on the second surface of n type III nitride semiconductor layer.The second surface of n type III nitride semiconductor layer can pass through photo-electro chemical oxidation and etching processing, and has erosion line kenel out of order.
According to technical scheme of the present invention, can provide light-emitting diode with reflection and low-impedance contact electrode.
Description of drawings
In accompanying drawing of the present invention, represent components identical with identical reference symbol.
Figure 1A to Fig. 1 H shows in order to the schematic cross sectional view of explanation according to the light-emitting diode fabrication schedule of one embodiment of the invention;
Fig. 2 shows photo-electro chemical oxidation and the etching apparatus according to one embodiment of the invention; And
Fig. 3 shows the part schematic cross sectional view according to the LED wafer of the roughening of one embodiment of the invention.
Drawing reference numeral
1 substrate
3n type III nitride semiconductor layer
The 3a first surface
The 3b second surface
5III group-III nitride active layer
7p type III nitride semiconductor layer
9 original position cambium layer
11 irrigation canals and ditches
12 table tops
13 reflective metal layers
15 non-conductive layers
17 crystal seed layers
19 metal levels
21n type electrode
50 LED wafer
100 photo-electro chemical oxidation and etching apparatus
110 illuminators
120 electrical bias systems
130 electrolyte solution systems
140 containers
150 microscope carriers
160 anchor clamps
Embodiment
Detailed description that other objects and advantages of the present invention can be by subsequently and the claim of enclosing and more obvious white.
Figure 1A to Fig. 1 H shows in order to the schematic cross sectional view of explanation according to the light-emitting diode fabrication schedule of one embodiment of the invention.
The top deposition that Figure 1A is presented at substrate 1 has the n type III nitride semiconductor layer 3 of first surface 3a and second surface 3b, deposition one layer or more III group-III nitride active layer 5 on the first surface 3a of n type III nitride semiconductor layer 3, deposition p type III nitride semiconductor layer 7 on one layer or more III group-III nitride active layer 5 then.Above-mentioned epitaxial structure (being n type III nitride semiconductor layer 3, III group-III nitride active layer 5 and p type III nitride semiconductor layer 7) can be by for example Organometallic Chemistry gas deposition (MOCVD, metal-organic chemical vapor deposition), molecular beam epitaxy (MBE, molecular beam epitaxy) or the technology of vapor phase epitaxy (VPE, vapor phase epitaxy) or the like deposit.Substrate 1 can be for example material of sapphire, carborundum, silicon, zinc oxide, aluminium nitride or GaAs or the like.N type III nitride semiconductor layer 3 can comprise following at least one of them: n-GaN layer, n-InGaN, n-AlGaN or n-AlInGaN layer.P type III nitride semiconductor layer 7 comprise following at least one of them: p-GaN, p-AlGaN, p-AlGaInN, p-InGaN and p-AlN.III group-III nitride active layer 5 can be InGaN/GaN layer, AlInGaN/AlGaN layer or AlInGaN/GaN layer.Though only show one deck n type III nitride semiconductor layer 3 and one deck p type III nitride semiconductor layer 7 in the accompanying drawings, n type III nitride semiconductor layer 3 and p type III nitride semiconductor layer 7 can have sandwich construction actually.
Figure 1B is presented at and forms original position (in-situ) cambium layer 9 on the p type III nitride semiconductor layer 7.Original position cambium layer 9 can comprise following at least one of them: magnesium (Mg), zinc (Zn), aluminium (Al), indium (In), gallium (Ga), carbon (C), silicon (Si) and beryllium (Be).The formation time system of original position cambium layer 9 is between about 5 seconds and about 300 seconds, and formation temperature system is between about 700 ℃ and about 1100 ℃.Original position cambium layer 9 also can deposit by for example technology of Organometallic Chemistry gas deposition (MOCVD), molecular beam epitaxy (MBE) or vapor phase epitaxy (VPE) or the like.
Fig. 1 C is presented at and forms a plurality of irrigation canals and ditches 11 in the structure of Figure 1B, and to define a plurality of table tops (mesa) 12, the structure of using Figure 1B is divided into a plurality of zones.Irrigation canals and ditches 11 can be formed by following wherein a kind of mode: wet etching, reactive ion etching (RIE, reactive ion etching), laser, cut the saw or the injection water skill in using a kitchen knife in cookery.Perhaps, irrigation canals and ditches 11 can pass through polymer (for example: photoresist) or hard mask (for example: silicon dioxide (SiO
2), silicon nitride (Si
3N
4), aluminium) formed.
Fig. 1 D is presented at and defines after the table top 12, by evaporation or coating and the method for curing or the like deposition of reflective metal level 13 above the original position cambium layer 9 of table top 12.Then, by evaporation or coating technique, for example modes such as electron beam (e-beam), thermal evaporation (thermal coater), sputter or chemical vapor deposition deposit non-conductive layer 15, to cover table top 12.Then, apply, expose by photoresist and etch step removes the non-conductive layer 15 of a part, and the surface of exposing reflective metal layer 13.Reflective metal layer 13 can comprise following at least one of them: silver, gold, aluminium or its alloy.Described non-conductive layer 15 comprise following one of them: silicon dioxide, silicon nitride, class diamond film, non-conductive metal oxide materials, polymeric material and ceramic material.Described non-conductive metal oxide materials is hafnium oxide, titanium oxide or tantalum oxide.Though only show one deck reflective metal layer 13 and one deck non-conductive layer 15 in the accompanying drawings, but the in fact reflective metal layer 13 of deposit multilayer and non-conductive layer 15.In addition, in another embodiment of the present invention, the formation of table top 12 opportunity can be after reflective metal layer 13 forms.Moreover, after deposition of reflective metal level 13, can carry out temper, to increase the tack between reflective metal layer 13 and the original position cambium layer 9.The temperature range of temper is about 250 ℃ to about 600 ℃.Can be applicable to thin-film type light-emitting diode (thin film LED) or flip chip type light-emitting diode (flip chip LED) according to the made light-emitting diode of manufacture method shown in Figure 1A to Fig. 1 D.In application facet, thin-film type light-emitting diode also can be arranged on the non-metallic layer (not having diagram) except being arranged on the metal level (not having diagram), for example is arranged on the non-metallic layer of Si, AlN, Ge, SiC or GaP or the like.
In another embodiment of the present invention, can shown in Fig. 1 E, follow deposit seed 17 on the structure of Fig. 1 D.Crystal seed layer 17 can comprise following one of them: copper, tungsten, gold, nickel, chromium, palladium, platinum or its alloy.Crystal seed layer 17 can be in order to promote follow-up electroplating technology performed on the structure of Fig. 1 D.Yet, if when utilizing electroless-plating technology, sputter or magnetic sputtering technology to replace electroplating technology, deposit seed 17 on the structure of Fig. 1 D not.Crystal seed layer 17 can be deposited by following wherein a kind of mode: chemical vapor deposition (CVD, chemical vapor deposition), Organometallic Chemistry gas deposition (MOCVD), physical vapor deposition (PVD, physical vapor deposition), ald (ALD, atomic layer deposition) or evaporation.Then, shown in Fig. 1 F, depositing metal layers 19 on the structure of Fig. 1 E, to cover table top 12 and to fill up irrigation canals and ditches 11.Though accompanying drawing only shows layer of metal layer 19, metal level 19 can have the single or multiple lift structure.Metal level 19 can comprise following one of them: copper, nickel, gold, aluminium, chromium, platinum, zinc or its alloy.Metal level 19 can be deposited by following manner: sputter, physical vapor deposition, chemical vapor deposition, plasma-enhanced chemical vapor deposition (PECVD, plasma enhanced chemical vapor deposition), evaporation-electron beam, evaporation-ion beam depositing, electro-deposition, electroless deposition, plasma spraying (plasma spray), inkjet deposited (injet deposition).Then, shown in Fig. 1 G, remove substrate 1 and expose the second surface 3b of n type III nitride semiconductor layer 3.Can utilize dry etching technology, chemistry to remove technology, cmp technology or laser divests (LLO, laser lift-off) technology and carries out removing of substrate 1.At last, shown in Fig. 1 H, on the second surface 3b of n type III nitride semiconductor layer 3, form n type electrode 21.N type electrode 21 has the single or multiple lift structure.The single or multiple lift structure of n type electrode 21 can comprise following one of them: nickel, chromium, platinum, gold, titanium, tantalum, tantalum nitride, copper, tin, zinc, tungsten, molybdenum, aluminium, silver or its combination.Can form n type electrode 21 by following method: evaporation, sputter, plating, electroless-plating, coating or printing.In addition, before forming n type electrode 21, in about 20 ℃ to about 150 ℃ temperature, with for example comprise sulfuric acid and hydrochloric acid at least one of them acidic liquid the surface of n type III nitride semiconductor layer 3 is cleared up, use to remove and be positioned at this lip-deep residual metal, and then use the organic solvent of acetone for example and/or isopropyl alcohol or the like to remove this lip-deep grease or other pollutants.
In addition, before deposition of reflective metal level 13, can clear up the surface of original position cambium layer 9, to reduce p side contacts resistance, can temperature range be about 20 ℃ to about 150 ℃ situation, carry out this cleanup step by acidity or akaline liquid, to remove the lip-deep oxide that is positioned at original position cambium layer 9, for example Ga
2O
3Or the like, use and reduce p side contacts resistance.This acidic liquid can be hydrochloric acid, nitrohydrochloric acid (aqua regia) and peroxosulphuric (piranha) at least one of them; And this akaline liquid can be ammoniacal liquor and peroxide ammoniacal liquor at least one of them.State in the use after the surface of chemicals cleaning original position cambium layer 9, remove lip-deep grease or other pollutants of original position cambium layer 9 with the organic solvent of for example acetone and/or isopropyl alcohol or the like.
In addition,, the second surface 3b of n type III nitride semiconductor layer 3 can be carried out roughening, lose the line kenel so that second surface 3b forms (non-ordered) out of order for the light that increases light-emitting diode takes out.This kind roughening can pass through Optical Electro-Chemistry (PEC, photoelectrochemical) oxidation and etching processing and reach.
Fig. 2 shows photo-electro chemical oxidation and the etching apparatus 100 according to one embodiment of the invention.Photo-electro chemical oxidation and etching apparatus 100 comprise: illuminator 110, electrical bias system 120 and electrolyte solution system 130.As shown in Figure 2, LED wafer 50 is held in place on the microscope carrier 150 in the container 140, and fixed by anchor clamps 160, and LED wafer 50 is immersed in the electrolyte solution system 130 fully, start illuminator 110 and electrical bias system 120 then, to carry out photo-electro chemical oxidation and etching processing.Illuminator 110 can have the wave-length coverage between visible light and ultraviolet spectrum.In an embodiment of the present invention, illuminator 110 is for having Xe or the Hg arc lamp that is distributed to the wave-length coverage of ultraviolet light from visible light.Electrical bias system 120 can be in order to applying electrical bias, and magnitude of voltage is controlled at-5V and+5V between, to promote the carrying out of photo-electro chemical oxidation and etching processing.Electrolyte solution system 130 can comprise the combination of oxidant and acid solution or alkaline solution, and wherein oxidant can comprise H
2O
2, K
2S
2O
8One of them or its combination; Acid solution can comprise H
2SO
4, HF, HCl, H
3PO
4, HNO
3, and CH
3COOH one of them or its combination; And alkaline solution can comprise KOH, NaOH and NH
4OH one of them or its combination.
Fig. 3 shows the part schematic cross sectional view according to the LED wafer 50 of the roughening of one embodiment of the invention.As shown in Figure 3, after LED wafer 50 was through photo-electro chemical oxidation and etching processing, the second surface 3b of n type III nitride semiconductor layer 3 can present erosion line kenel out of order.
Moreover, compared to the known p-GaN that engages with reflective metal layer, because using, light-emitting diodes piping of the present invention for example comprises magnesium (Mg), zinc (Zn), aluminium (Al), indium (In), gallium (Ga), carbon (C), silicon (Si) and beryllium (Be) the original position cambium layer of one of them at least, so can improve tack and contact resistance between reflective metal layer and the p type III nitride semiconductor layer.
Table 1 is presented under the different tempered condition, the peel test results of known p-GaN (structure A) and original position cambium layer of the present invention (structure B), this result can demonstrate known p-GaN (structure A) and original position cambium layer of the present invention (structure B) respectively and the tack between the reflective metal layer.The structure A of table 1 forms by following program: have thereon on 2 o'clock wafers of epitaxial structure, directly with electron beam with the Ag evaporation on the p-GaN of this extension structure layer and form reflective metal layer, carry out tempering then, and carry out and peel off test; And the structure B of table 1 system forms by following program: have thereon on 2 o'clock wafers of epitaxial structure, by the Organometallic Chemistry vapor deposition method, sedimentary condition with 955 ℃ * 60 seconds, on the p-GaN of this extension structure layer, deposit magnesium (Mg) original position cambium layer, with peroxosulphuric and hydrochloric acid the cambial surface of original position is cleared up in regular turn then, then use acetone and isopropyl alcohol that the cambial surface of original position is cleared up in regular turn, and the Ag evaporation is formed reflective metal layer on magnesium original position cambium layer by electron beam, carry out tempering then, and carry out and peel off test.The method of peeling off test is: utilize cutter that the surface of reflective metal layer is waited and cut apart, the standard adhesive tape is attached at the surface of reflective metal layer, the situation of peeling off of tearing adhesive tape then and observing the reflective metals laminar surface.
Table 1
By the test result of table 1 as can be known, compared to known p-GaN, original position cambium layer of the present invention can provide preferable tack to reflective metal layer.
Though the present invention describes with reference to its example embodiment, the present invention is not limited to these example embodiment.Those skilled in the art can understand under the situation of spirit of not leaving claim of the present invention and being defined and scope, can carry out various modifications, variation and equivalent substitution.Therefore, this kind modification, variation and equivalent substitution all belong in the scope that defines in claim of the present invention.
Claims (35)
1. the manufacturing method for LED with reflection and low-impedance contact electrode is characterized in that described method comprises the following steps:
Deposition one layer or more n type III nitride semiconductor layer on a substrate, wherein said one layer or more n type III nitride semiconductor layer has a first surface and a second surface;
Deposition one layer or more III group-III nitride active layer on the first surface of described one layer or more n type III nitride semiconductor layer;
Deposition one layer or more p type III nitride semiconductor layer on described one layer or more III group-III nitride active layer;
On described one layer or more p type III nitride semiconductor layer, form an original position cambium layer; And
Deposition one layer or more reflective metal layer on described original position cambium layer.
2. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1 is characterized in that described method more comprises:
Deposition one layer or more metal level on described one layer or more reflective metal layer;
Remove described substrate; And
On the second surface of described n type III nitride semiconductor layer, form one layer or more n type electrode.
3. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1, it is characterized in that, described n type III nitride semiconductor layer comprise following at least one of them: n-GaN, n-InGaN, n-AlGaN and n-AlInGaN and/or described p type III nitride semiconductor layer comprise following at least one of them: p-GaN, p-AlGaN, p-AlGaInN and p-AlN.
4. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1 is characterized in that described III group-III nitride active layer is InGaN/GaN layer, AlInGaN/AlGaN layer or AlInGaN/GaN layer.
5. as claimed in claim 1 have the reflection and a manufacturing method for LED of low-impedance contact electrode, it is characterized in that, described reflective metal layer comprise following at least one of them: silver, gold, aluminium or its alloy.
6. as claimed in claim 1 have the reflection and a manufacturing method for LED of low-impedance contact electrode, it is characterized in that, described original position cambium layer comprise following at least one of them: magnesium, zinc, aluminium, indium, gallium, carbon, silicon and beryllium.
7. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 2 is characterized in that described method more comprises:
The second surface of described n type III nitride semiconductor layer is carried out roughening, so that described second surface forms erosion line kenel out of order.
8. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1 or 2 is characterized in that described substrate is sapphire, carborundum, silicon, zinc oxide, aluminium nitride or GaAs.
9. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 2 is characterized in that described one layer or more metal level comprises: copper, nickel, gold, aluminium, chromium, platinum, zinc or its alloy.
10. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1 is characterized in that, before the described reflective metal layer of deposition, the cambial surface of described original position is cleared up.
11. as claimed in claim 9 have the reflection and a manufacturing method for LED of low-impedance contact electrode, it is characterized in that, temperature range be about 20 ℃ to about 150 ℃ situation, carry out described cleanup step by acidity or akaline liquid.
12. as claimed in claim 11 have the reflection and a manufacturing method for LED of low-impedance contact electrode, it is characterized in that, described acidic liquid be hydrochloric acid, nitrohydrochloric acid and peroxosulphuric at least one of them; And described akaline liquid be ammoniacal liquor and peroxide ammoniacal liquor at least one of them.
13. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1, it is characterized in that, after forming described original position cambium layer and before the described reflective metal layer of deposition, form a plurality of irrigation canals and ditches to define one or more table top, then the described reflective metal layer of deposition on described original position cambium layer.
14. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1 is characterized in that, after the described reflective metal layer of deposition, forms a plurality of irrigation canals and ditches to define one or more table top on described original position cambium layer.
15. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 2, it is characterized in that, after forming described original position cambium layer and before the described reflective metal layer of deposition, form a plurality of irrigation canals and ditches to define one or more table top, then the described reflective metal layer of deposition on described original position cambium layer.
16. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 2 is characterized in that, after the described reflective metal layer of deposition, forms a plurality of irrigation canals and ditches to define one or more table top on described original position cambium layer.
17., it is characterized in that described method more comprises as the described manufacturing method for LED of arbitrary claim in the claim 13 to 16 with reflection and low-impedance contact electrode:
Deposition one layer or more non-conductive layer has the described table top of described reflective metal layer thereon to cover, and partly removes described non-conductive layer, to expose the surface of described reflective metal layer.
18. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 17, it is characterized in that, described non-conductive layer comprise following one of them: silicon dioxide, silicon nitride, class diamond film, non-conductive metal oxide materials, polymeric material and ceramic material.
19. as claim 15 or 16 described manufacturing method for LED with reflection and low-impedance contact electrode, it is characterized in that described method more is included in deposition one crystal seed layer between described one layer or more metal level and described reflective metal layer and the described non-conductive layer.
20. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 19 is characterized in that described one layer or more metal level covers described table top and fills up described irrigation canals and ditches.
21., it is characterized in that described one layer or more metal level covers described table top and fills up described irrigation canals and ditches as claim 15 or 16 described manufacturing method for LED with reflection and low-impedance contact electrode.
22. as claimed in claim 19 have the reflection and a manufacturing method for LED of low-impedance contact electrode, it is characterized in that, described crystal seed layer comprise following one of them: copper, tungsten, gold, nickel, chromium, palladium, platinum or its alloy.
23. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1 or 2, it is characterized in that described original position forms series of strata and forms by following wherein a kind of method: Organometallic Chemistry gas deposition, molecular beam epitaxy or vapor phase epitaxy.
24. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 23, it is characterized in that, the cambial formation time of described original position system is between about 5 seconds and about 300 seconds, and the cambial formation temperature of described original position system is between about 700 ℃ and about 1100 ℃.
25. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 1, it is characterized in that, after the described reflective metal layer of deposition, carry out a temper, increasing the tack between described reflective metal layer and the described original position cambium layer, and the temperature range of described temper is about 250 ℃ to about 600 ℃.
26. the manufacturing method for LED with reflection and low-impedance contact electrode as claimed in claim 2, it is characterized in that, before forming described n type electrode, in about 20 ℃ to about 150 ℃ temperature, with an acidic liquid surface of described n type III nitride semiconductor layer is cleared up, use removing described lip-deep residual metal, and then use acetone and/or isopropyl alcohol to remove described lip-deep grease or other pollutants.
27. an III group-III nitride light-emitting diode is characterized in that described light-emitting diode comprises:
One layer or more n type III nitride semiconductor layer has a first surface and a second surface;
One layer or more III group-III nitride active layer is arranged on the first surface of described one layer or more n type III nitride semiconductor layer;
One layer or more p type III nitride semiconductor layer is arranged on the described one layer or more III group-III nitride active layer;
One original position cambium layer, original position are formed on the described one layer or more p type III nitride semiconductor layer; And
The one layer or more reflective metal layer is arranged on the described original position cambium layer.
28. III group-III nitride light-emitting diode as claimed in claim 27 is characterized in that described light-emitting diode more comprises:
The one layer or more metal level is arranged on the described reflective metal layer; And
One layer or more n type electrode is arranged on the second surface of described n type III nitride semiconductor layer.
29. III group-III nitride light-emitting diode as claimed in claim 27, it is characterized in that, described n type III nitride semiconductor layer comprise following at least one of them: n-GaN, n-InGaN, n-AlGaN and n-AlInGaN and/or described p type III nitride semiconductor layer comprise following at least one of them: p-GaN, p-AlGaN, p-AlGaInN and p-AlN.
30. III group-III nitride light-emitting diode as claimed in claim 27 is characterized in that, described III group-III nitride active layer is InGaN/GaN layer, AlInGaN/AlGaN layer or AlInGaN/GaN layer.
31. III group-III nitride light-emitting diode as claimed in claim 27 is characterized in that, described reflective metal layer comprise following at least one of them: silver, gold, aluminium or its alloy.
32. III group-III nitride light-emitting diode as claimed in claim 27 is characterized in that, described original position cambium layer comprise following at least one of them: magnesium, zinc, aluminium, indium, gallium, carbon, silicon and beryllium.
33. III group-III nitride light-emitting diode as claimed in claim 28 is characterized in that, the second surface of described n type III nitride semiconductor layer is the rough surface of erosion line kenel out of order.
34. III group-III nitride light-emitting diode as claimed in claim 28 is characterized in that described one layer or more metal level comprises copper, nickel, gold, aluminium, chromium, platinum, zinc or its alloy.
35., it is characterized in that described substrate is sapphire, carborundum, silicon, zinc oxide, aluminium nitride or GaAs claim 27 or 28 described III group-III nitride light-emitting diodes.
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| CN2009101320576A CN101834239B (en) | 2009-03-10 | 2009-04-15 | Light-emitting diode with reflecting and low-impedance contact electrode and manufacturing method thereof |
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| CN2009101320576A CN101834239B (en) | 2009-03-10 | 2009-04-15 | Light-emitting diode with reflecting and low-impedance contact electrode and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769085A (en) * | 2011-05-04 | 2012-11-07 | 隆达电子股份有限公司 | Semiconductor structure with low contact resistance and method for manufacturing semiconductor structure |
| CN103219433A (en) * | 2012-01-20 | 2013-07-24 | 泰谷光电科技股份有限公司 | Light emitting diode and manufacturing method thereof |
| US9130122B2 (en) | 2013-09-06 | 2015-09-08 | Industrial Technology Research Institute | Light emitting diode |
| CN110137321A (en) * | 2019-04-19 | 2019-08-16 | 西安电子科技大学 | Vertical structure UV LED and preparation method based on bulk aluminum nitride substrate |
| CN112490303A (en) * | 2020-10-28 | 2021-03-12 | 南昌大学 | AlGaInP thin film LED chip structure with n-surface light emitting in specific geometric figure |
-
2009
- 2009-04-15 CN CN2009101320576A patent/CN101834239B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769085A (en) * | 2011-05-04 | 2012-11-07 | 隆达电子股份有限公司 | Semiconductor structure with low contact resistance and method for manufacturing semiconductor structure |
| CN103219433A (en) * | 2012-01-20 | 2013-07-24 | 泰谷光电科技股份有限公司 | Light emitting diode and manufacturing method thereof |
| US9130122B2 (en) | 2013-09-06 | 2015-09-08 | Industrial Technology Research Institute | Light emitting diode |
| CN110137321A (en) * | 2019-04-19 | 2019-08-16 | 西安电子科技大学 | Vertical structure UV LED and preparation method based on bulk aluminum nitride substrate |
| CN112490303A (en) * | 2020-10-28 | 2021-03-12 | 南昌大学 | AlGaInP thin film LED chip structure with n-surface light emitting in specific geometric figure |
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| CN101834239B (en) | 2012-07-18 |
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