CN101833073A - On-chip integrated cmos latch Hall sensor - Google Patents
On-chip integrated cmos latch Hall sensor Download PDFInfo
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- CN101833073A CN101833073A CN 201010174967 CN201010174967A CN101833073A CN 101833073 A CN101833073 A CN 101833073A CN 201010174967 CN201010174967 CN 201010174967 CN 201010174967 A CN201010174967 A CN 201010174967A CN 101833073 A CN101833073 A CN 101833073A
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Abstract
The invention discloses an on-chip integrated cmos latch Hall sensor, which comprises a Hall disc, a signal processing module, an output module, a clock signal and logic control module and a protective module. The output end of the Hall disc is connected with the signal processing module; the output end of the signal processing module is connected with the output module; the output end of the protective module is connected with the clock signal and logic control module; the output end of the clock signal and logic control module is connected with the Hall disc, the signal processing module and the output module; the Hall disc provides Hall voltage; the signal processing module performs maladjustment elimination, amplification, sampling, comparison and maintenance on the Hall voltage; the clock signal and logic control module provides a clock signal and an enable control signal for all parts of a circuit; and the protective module performs temperature protection and undervoltage protection on the circuit. The circuit of the invention reduces the influence of voltage fluctuation and clock signal shock on Hall signal amplification and improves the stability and reliability of the circuit.
Description
Technical field
The present invention relates to a kind of Hall element, particularly a kind of low-voltage brshless DC motor that is applicable to drives, and the on-chip integrated cmos latch Hall sensor of low voltage supply, high sensitivity, low-power consumption, good stability is arranged.
Background technology
Hall element is a kind of magnetic field sensor of making according to Hall effect.Can detect magnetic field and variation thereof with it, can in the various occasions relevant, use with magnetic field.Hall element is its working foundation with Hall effect, the integrated sensor of being made up of the accessory circuit of Hall element and it.Hall element has a very wide range of applications in commercial production, communications and transportation and daily life.Along with the miniaturization of modern electronic equipment complete machine forward, the development of multi-functional, intelligent direction, though require used sensor to the variation of physical quantity in the short space also can high sensitivity, make response at a high speed.This demand has driven the development trend that one chip integrated sensor, signal condition, power output are controlled.Therefore, also more and more higher for the requirement of Hall element: the reducing of chip area, can also reduce by detected Hall voltage thereupon, the elimination of factors such as the imbalance of circuit, noise there is very high requirement with control; The design of low pressure, high sensitivity circuit also has very big technical difficulty with realization.
Traditional Hall element circuit such as Figure of description shown in Figure 1 is made up of Hall disc, signal processor, output and clock control several sections.Hall disc induced magnetism signal and be translated into voltage signal wherein, signal processor is handled the magnetic signal that obtains, and output is by result's control of signal processor.Hall element is divided into linear hall sensor and Hall switch sensor again, the simulating signal that linear hall sensor output is directly proportional with magnetic field intensity, and Hall switch sensor is then exported digital signal.Hall switch sensor is because different demands is divided into 2 kinds again: general Hall switch sensor and latch Hall sensor.The former at the magnetic field intensity absolute value greater than B
OnThe time output low level, less than B
OffTime output high level; Latter's Control current flows to, curve of output such as Figure of description shown in Figure 2.
For latch Hall sensor, it is mainly used in the environment such as control of brshless DC motor, output result such as Figure of description shown in Figure 2, and its course of work is as follows: at first, circuit makes rotor begin to rotate to the motor coil certain hour of switching on.When rotor rotation arrives magnetic field intensity greater than B
OnThe time, Hall element changes the rotor current direction, and the rotor field direction changes thereupon, and then the magnetic field between rotor and the stator is the mutual exclusion state, and rotor is rotated further, and turns over 180 degree, and the magnetic field between rotor and the stator is the attraction state, and this moment, magnetic field intensity was less than-B
On, Hall element changes direction of current, and then the magnetic field between rotor and the stator becomes the mutual exclusion state again.So circulation makes that rotor continues to rotate.
The realization of Hall element existing a lot of years with application, but development along with mobile device, high integration, low suppling voltage, low-power consumption are now required characteristic sensors, and the on-chip all-in-one Hall element can satisfy above-mentioned requirements, but have also increased design and realized difficulty.
From the operating angle of motor, about former point symmetry, to guarantee the rotating speed equilibrium of rotor, machine operation is stable because of as far as possible for the Bon value on Hall element both sides.The demand of Hall element microminiaturization, the Hall disc size reduces, voltage supply reduces, and the Hall voltage of generation is very small and weak, and the Hall voltage that produces under 3V voltage supply, 100mT magnetic field has only about 0.3mv.In the general technology, Hall disc has the voltage imbalance of 7mv under the 3V voltage supply, and operational amplifier is eliminated above-mentioned imbalance effectively in the imbalance that then has about 10mv, is the key that the Hall element function realizes.
Summary of the invention
Technical matters to be solved by this invention provides a kind of circuit capable of inhibiting imbalance, voltage fluctuation is big, improves the integrated cmos latch Hall sensor of the reliability and stability of working sensor.
For solving the problems of the technologies described above; technical scheme of the present invention is: a kind of on-chip integrated cmos latch Hall sensor; comprise Hall disc, signal processing module, output module; the output terminal of Hall disc is connected with signal processing module; the output terminal of signal processing module is connected with output module; it also comprises clock signal and Logic control module and protection module; the output terminal of protection module is connected with Logic control module with clock signal, and clock signal is connected with Hall disc, signal processing module, output module with the output terminal of Logic control module.
In order to reduce the influence of voltage fluctuation, make circuit performance more reliable and more stable, the output signal of above-mentioned Hall disc is through operational amplifier and comparer, and the output terminal of operational amplifier is connected with the input end of comparer, is in series with electric capacity at the output terminal of operational amplifier and the input end of comparer.
Bigger at output current, and electric current is under the situation of constantly upset, for the shock effect that reduces over the ground, supply voltage causes, make the device more stable work, above-mentioned output module is by the output of H bridge driving circuit, and between the triode of H bridge driving circuit homonymy, triode is connected with resistance respectively.
The invention has the beneficial effects as follows:
(1) circuit stability height, good reliability: the electric capacity that two-phase is closed sampling imbalance elimination is connected on the instrumentation amplifier output terminal, rather than between output terminal and the ground, reduced voltage fluctuation, clock signal impact for the influence that hall signal amplifies, improved the stability and the reliability of circuit.With the electric resistance partial pressure benchmark of device as a comparison, reduced the influence of comparer imbalance itself to the output B-H loop, make B-H loop good for the symmetry of zero magnetic field intensity, improve the reliability of the circuit of knowing clearly.With enable signal chip is controlled, be in dormant state under the chip normal condition, when having reduced power consumption, reduced the influence of chip heating for self performance.
(2) production cost is low: chip uses CMOS technology, compares with the BICMOS technology that similar products use mostly, and production cost is low; Reduced the use of triode, chip area reduces relatively, reduces cost.
(3) low in energy consumption: operating voltage is low, and the operating voltage of this product is 2.5V-4V, low-voltage, and power consumption is little; Adopt on-off circuit that chip is controlled, breaking circuit when not needing work has reduced power consumption, prolongs chip serviceable life.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is traditional Hall element Organization Chart.
Fig. 2 is Hall element output-magnetic field dependence figure.
Fig. 3 is a structural scheme of mechanism of the present invention.
Fig. 4 eliminates Hall disc imbalance schematic diagram for the rotatory current method.
Fig. 5 Hall disc Resistance model for prediction figure.
Schematic diagram is eliminated in the imbalance of Fig. 6 amplifier.
Fig. 7 resistance-type phase inverter.
Embodiment
As shown in Figure 3; a kind of on-chip integrated cmos latch Hall sensor; comprise Hall disc, signal processing module, output module; the output terminal of Hall disc is connected with signal processing module; the output terminal of signal processing module is connected with output module; it also comprises clock signal and Logic control module and protection module; the output terminal of protection module is connected with Logic control module with clock signal, and clock signal is connected with Hall disc, signal processing module, output module with the output terminal of Logic control module.
Hall disc provides Hall voltage, signal processing module to the Hall voltage that provides lack of proper care elimination, amplification, sampling, relatively keep after, export to output module control output current direction.Clock signal and Logic control module provide clock signal for the circuit each several part and enable control signal; protection module carries out temperature, the under-voltage protection to integrated circuit; under the adverse environments such as, brownout too high, close Hall chip, prevent that chip is damaged in temperature.
The device that Hall element detects changes of magnetic field is a Hall disc, and in integrated chip constantly developed, Hall disc had very high requirement to size and precision.Because reducing and the influence of low voltage supply of Hall disc size, the Hall voltage of generation is very small and weak, and the Hall voltage that produces under 3mT magnetic field has only about 0.3mv.Under actual conditions, because influences such as technology, pressure, the Hall disc in the chip is not desirable symmetrical device.In general technology, its resistance has 1% difference.
Shown in Figure 5 is the Resistance model for prediction figure of Hall disc, establishes B, D two ends and connects power supply and ground respectively, and A, C two ends are Hall voltage output terminals, R
H1～R
H3If=R is R
H41% deviation is arranged, then can calculate under the 3V supply voltage, there is the voltage imbalance of 7mv at A, C two ends.
The present invention uses the rotatory current method to eliminate the imbalance of Hall disc.Its principle of work as shown in Figure 4, by clock signal Control current direction, CLK is timing, electric current B in Hall disc flows to D, A, C two ends output Hall voltage:
Vh1-Vh2＝V
H+Vo1＝V
clk (1)
When CLK was negative, electric current flow to A from C, B, D two ends output Hall voltage:
Vh1-Vh2＝-VH+Vo2＝V
-clk (2)
(1) with (2) do poor:
V
clk-V
-clk＝2V
H+(Vo1-Vo2) (3)
Wherein, the Hall voltage of VH for producing, Vh1, Vh2 are the output voltage of Hall disc, Vo1 and Vo2 be respectively CLK for just with the Hall disc offset voltage of CLK when bearing.
Analyze the size of (Vo1-Vo2) in (3) formula below with the Hall disc Resistance model for prediction of Fig. 4.Suppose that resistance has 1% difference among the figure, get R
H1=R
H3=R, R
H2=0.99R, R
H4=1.01R can obtain the imbalance under the 3V voltage supplied
Vo1＝3(101/200-0.5) (4)
Vo2＝3(100/199-100/201) (5)
(3) formula of bringing into is calculated to such an extent that (Vo1-Vo2) is 10
-7The V order of magnitude, Hall voltage is 10
-4The V order of magnitude, thus, the imbalance of Hall disc no longer exerts an influence to the measurement of Hall voltage.
The present invention adopts two-phase to close sampling method and eliminates the amplifier imbalance, its circuit structure as shown in Figure 6, the amplifier input end is Vh1 and Vh2 respectively, Vo is the imbalance of amplifier, the amplifier enlargement factor is A.V1, V2 are respectively two voltage references.
The clock positive half period, two cmos switches are opened,
Vb＝V2，Va＝V1；
The quantity of electric charge in the electric capacity is at this moment
C1：Q1＝c1(V4-Vb) C2：Q2＝c2(V3-Va)
V4-V3＝AV
H+Vo
The clock negative half-cycle, cmos switch turn-offs, and the quantity of electric charge on two electric capacity is constant at this moment, so electric capacity both end voltage difference remains unchanged:
V4-V3＝-AV
H+Vo
Vb-Va＝(Vb-V4)+(V4-V3)+(V3-Va)
＝(-AV
H+Vo)+(Vb-Va)+(V3-V4)
＝(V2-V1)+(-2AV
H) (6)
Find out that from (6) formula at the negative half-cycle of clock, the comparator input terminal voltage difference has been eliminated the imbalance of amplifier.This method is similar to differential amplifier, and hall signal is a difference mode signal, and offset voltage is a common-mode signal.
General hall device, two electric capacity are connected between output terminal and the ground, it is bigger to be subjected to the voltage fluctuation influence, the output signal of Hall disc of the present invention is through operational amplifier and comparer, the output terminal of operational amplifier is connected with the input end of comparer, is in series with electric capacity at the output terminal of operational amplifier and the input end of comparer, and it is connected on amplifier output terminal and comparator input terminal, reduced the influence of voltage fluctuation, made circuit performance more reliable and more stable.
For stable output, prevent the unnecessary output redirect that noise causes, Hall element output needs certain hysteresis function, and its realization is to use the reaction type comparer.
(6) V2-V1 in the formula is exactly the benchmark of feedback comparer, by regulating its size, can regulate the width of B-H loop.By comparer output, the size of FEEDBACK CONTROL V2-V1 is finished B-H loop, stable output.
The output current of chip is bigger, under the situation of constantly upset, over the ground, supply voltage causes shock effect to a certain degree, makes the device job insecurity.The present invention drives in the phase inverter in output and has added resistance, and output module is by the output of H bridge driving circuit, as shown in Figure 7, between the triode of H bridge driving circuit homonymy, triode connects with resistance respectively, slows down the chip current upset to the voltge surge that device causes, and makes the device more stable work reliable.
Signal sampling of the present invention, imbalance are eliminated and the feedback comparator circuit can effectively be eliminated the circuit imbalance that causes because of external causes such as technology, pressure, influence to factors such as change in voltage has stronger resistancing action, make the reliability and stability of on-chip all-in-one Hall element work improve, and reduced chip area, cost, market range of application has preferably been arranged.
The foregoing description does not limit the present invention in any way, and every employing is equal to replaces or technical scheme that the mode of equivalent transformation obtains all drops in protection scope of the present invention.
Claims (3)
1. on-chip integrated cmos latch Hall sensor; comprise Hall disc, signal processing module, output module; the output terminal of Hall disc is connected with signal processing module; the output terminal of signal processing module is connected with output module; it is characterized in that also comprising clock signal and Logic control module and protection module; the output terminal of protection module is connected with Logic control module with clock signal, and clock signal is connected with Hall disc, signal processing module, output module with the output terminal of Logic control module.
2. a kind of on-chip integrated cmos latch Hall sensor according to claim 1, it is characterized in that: the output signal of described Hall disc is through operational amplifier and comparer, the output terminal of operational amplifier is connected with the input end of comparer, is in series with electric capacity at the output terminal of operational amplifier and the input end of comparer.
3. a kind of on-chip integrated cmos latch Hall sensor according to claim 1 is characterized in that: described output module is by the output of H bridge driving circuit, and between the triode of H bridge driving circuit homonymy, triode is connected with resistance respectively.
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| CN 201010174967 CN101833073A (en) | 2010-05-18 | 2010-05-18 | On-chip integrated cmos latch Hall sensor |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236736A (en) * | 2011-07-08 | 2011-11-09 | 南京邮电大学 | Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor |
| CN102435211A (en) * | 2011-09-09 | 2012-05-02 | 南京中旭电子科技有限公司 | Non-contact fuel delivery valve Hall position announciator |
| CN102445671A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Hall device error compensation circuit |
| CN103326702A (en) * | 2013-05-31 | 2013-09-25 | 北京经纬恒润科技有限公司 | Hall switch circuit |
| CN104571246A (en) * | 2014-12-17 | 2015-04-29 | 南京邮电大学 | Current rotating circuit applied to Hall sensor |
| CN109387795A (en) * | 2017-08-09 | 2019-02-26 | 苏州市灵矽微系统有限公司 | A kind of CMOS Magnetic Sensor analog front circuit |
| CN109631954A (en) * | 2019-01-28 | 2019-04-16 | 绍兴光大芯业微电子有限公司 | Realize the proframmable linear Hall sensor chip structure of on piece temperature compensation function |
| WO2020074100A1 (en) * | 2018-10-12 | 2020-04-16 | Pierburg Pump Technology Gmbh | Electronically commutated electric motor |
| CN112838575A (en) * | 2021-01-07 | 2021-05-25 | 四川众航电子科技有限公司 | Temperature compensation Hall sensor device |
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| CN1400471A (en) * | 2001-07-26 | 2003-03-05 | 松下电器产业株式会社 | Magnetic sensor |
| US6532436B2 (en) * | 1999-12-30 | 2003-03-11 | Micronas Gmbh | Sensor |
| CN200941361Y (en) * | 2006-06-12 | 2007-08-29 | 南京中旭电子科技有限公司 | Magnetic switch |
| CN101697468A (en) * | 2009-10-14 | 2010-04-21 | 无锡海威半导体科技有限公司 | Low-voltage BLDC motor drive integrated circuit |
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| US6532436B2 (en) * | 1999-12-30 | 2003-03-11 | Micronas Gmbh | Sensor |
| CN1400471A (en) * | 2001-07-26 | 2003-03-05 | 松下电器产业株式会社 | Magnetic sensor |
| CN200941361Y (en) * | 2006-06-12 | 2007-08-29 | 南京中旭电子科技有限公司 | Magnetic switch |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445671B (en) * | 2010-10-13 | 2015-12-16 | 北京中科信电子装备有限公司 | A kind of Hall device error compensation circuit |
| CN102445671A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Hall device error compensation circuit |
| CN102236736B (en) * | 2011-07-08 | 2012-11-28 | 南京邮电大学 | Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor |
| CN102236736A (en) * | 2011-07-08 | 2011-11-09 | 南京邮电大学 | Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor |
| CN102435211A (en) * | 2011-09-09 | 2012-05-02 | 南京中旭电子科技有限公司 | Non-contact fuel delivery valve Hall position announciator |
| CN103326702A (en) * | 2013-05-31 | 2013-09-25 | 北京经纬恒润科技有限公司 | Hall switch circuit |
| CN103326702B (en) * | 2013-05-31 | 2015-11-11 | 北京经纬恒润科技有限公司 | A kind of Hall switch circuit |
| CN104571246B (en) * | 2014-12-17 | 2017-01-04 | 南京邮电大学 | A kind of rotatory current circuit being applied to Hall element |
| CN104571246A (en) * | 2014-12-17 | 2015-04-29 | 南京邮电大学 | Current rotating circuit applied to Hall sensor |
| CN109387795A (en) * | 2017-08-09 | 2019-02-26 | 苏州市灵矽微系统有限公司 | A kind of CMOS Magnetic Sensor analog front circuit |
| CN109387795B (en) * | 2017-08-09 | 2021-01-01 | 苏州市灵矽微系统有限公司 | CMOS magnetic sensor analog front-end circuit |
| WO2020074100A1 (en) * | 2018-10-12 | 2020-04-16 | Pierburg Pump Technology Gmbh | Electronically commutated electric motor |
| CN109631954A (en) * | 2019-01-28 | 2019-04-16 | 绍兴光大芯业微电子有限公司 | Realize the proframmable linear Hall sensor chip structure of on piece temperature compensation function |
| CN109631954B (en) * | 2019-01-28 | 2021-05-11 | 绍兴光大芯业微电子有限公司 | Programmable linear Hall sensor chip structure for realizing on-chip temperature compensation function |
| CN112838575A (en) * | 2021-01-07 | 2021-05-25 | 四川众航电子科技有限公司 | Temperature compensation Hall sensor device |
| CN112838575B (en) * | 2021-01-07 | 2023-03-24 | 四川众航电子科技有限公司 | Temperature compensation Hall sensor device |
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Application publication date: 20100915 |