CN101819336B - Reflecting plasma electro-optical switch - Google Patents
Reflecting plasma electro-optical switch Download PDFInfo
- Publication number
- CN101819336B CN101819336B CN 201010003664 CN201010003664A CN101819336B CN 101819336 B CN101819336 B CN 101819336B CN 201010003664 CN201010003664 CN 201010003664 CN 201010003664 A CN201010003664 A CN 201010003664A CN 101819336 B CN101819336 B CN 101819336B
- Authority
- CN
- China
- Prior art keywords
- pockers cell
- crystal
- discharge cavity
- optical switch
- electro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Lasers (AREA)
Abstract
The invention discloses a reflecting plasma electro-optical switch which comprises a pockelcell and a polaroid used for polarizing and analyzing. Two faces of a KD*P crystal in the pockelcell of the electro-optical switch are respectively provided with a copper-base reflector and a discharge chamber, wherein the copper-base reflector is tightly attached to the KD*P crystal; the copper-base reflector in the pockelcell is connected to the low voltage end of a load resistor of an externally connected pulser and is grounded. The polaroid is arranged in the front of an optical window of the pockelcell, and the crosswise center of the polaroid is in coaxial core with the crosswise center of the pockelcell. The reflecting plasma electro-optical switch of the invention has the characteristics of large caliber, low driving voltage, less light absorption, low cost, easy heat management and the like, and can be used for Q modulation, isolation and pulse injection and locking of a laser system with a lager caliber and high average power.
Description
Technical field
The invention belongs to high-average power laser system field, be specifically related to a kind of reflecting plasma electro-optical switch that is applied in the high-average power large-caliber laser system.
Background technology
In the high-average power laser system, be used as the essential elements electrooptical switching of transferring Q, laser isolation and injection-locking pulsed and run into the double challenge of clear aperture restriction, make electrooptical switching become one of limiting part of high-average power laser with thermal effect.The conventional ring electrode Pockers cell of vertically using, for obtaining optical homogeneity preferably, require its electro-optic crystal aspect ratio greater than 1, clear aperture is several centimetres a Pockers cell, its switch crystal will cause big temperature rise of crystal and thermograde owing to serious light absorption, refractive index is changed, cause the hot depolarization and the wavefront distortion of transmitted light beam.Even if can be scaled to heavy caliber, adopt the plasma Pockers cell that approaches crystal, because electro-optic crystal ambient pressure of living in is low, convection transfer rate is little, electro-optic crystal will produce heat deposition to the linear absorption of laser, further cause undesirable heat effects such as stress birefrin, depolarization, wavefront distortion, thereby make the average output power of laser instrument be restricted, the beam quality variation, also can only be used for single-shot task pattern.Need fundamentally eliminate thermal effect.Livermore national laboratory A.Bayramian was called " frequency inverted and switching technique " (" Frequency conversion and switching technologies " in 2006 at one piece, A.Bayramian, C.Bibeau, and J.Caird et al.UCRL-PRESS-222125,2006) propose at KD in the annual report
*Stick sapphire on the P crystal plane of incidence and the exit facet respectively, utilize the big heat-conduction coefficient of sapphire, take away used heat in the crystal.But because sapphire dividing potential drop effect certainly will cause the increase of plasma electro-optical switch driving voltage.If two sapphire thickness equal KD
*The P crystal thickness is then for making KD
*The last dividing potential drop of P equals half-wave voltage, and driving power need provide the voltage up to 80kV, and the development difficulty that this will cause the repetition frequency high voltage drive source involves great expense and complex structure simultaneously.In addition, heat make to have bigger transverse temperature gradient in the electro-optic crystal, and thermograde is the immediate cause that causes the Pockers cell thermal effect along lateral transport in the heat transfer process.
Summary of the invention
In order to break through the double challenge of clear aperture restriction that the essential elements electrooptical switching run into and thermal effect in the high-average power laser system, the invention provides a kind of reflecting plasma electro-optical switch.
The present invention utilizes the copper base reflecting mirror that electro-optic crystal is carried out end face and force cooling management thermal effect, and the using plasma electrode technology is scaled to heavy caliber with electrooptical switching by reflective design.
A kind of reflecting plasma electro-optical switch comprises Pockers cell and a polaroid that has been used for inclined to one side and analyzing; Wherein Pockers cell contains Pockers cell housing, KD
*P crystal, optical window, discharge cavity, taper spray point, electrode retaining collar, electrode tip holder, the admission piece of bleeding, base.Also contain the copper base reflecting mirror in the Pockers cell of described electrooptical switching.The annexation of described Pockers cell is that Pockers cell housing middle part is provided with and is used to inlay KD
*The square hole of P crystal.KD
*In the bonding square hole that is embedded in the Pockers cell housing of P crystal, KD
*Be respectively arranged with copper base reflecting mirror and discharge cavity on two faces of P crystal, copper base reflecting mirror and KD*P crystal are close to setting.Be outside equipped with optical window at discharge cavity.Be provided with electrode retaining collar in the discharge cavity, electrode retaining collar is connected with the taper spray point by screw thread.The electrode tip holder fixed bonding is on the Pockers cell housing, and the inner of electrode tip holder is connected with electrode retaining collar, and the outer end of electrode tip holder is connected with pulse producer pull-up resistor high-pressure side.The Pockers cell housing is provided with the air inlet mouth of bleeding, and the air inlet mouth of bleeding is communicated with discharge cavity; Pockers cell is arranged on the base by strut fixation.Copper base reflecting mirror in the Pockers cell is connected with external pulse producer pull-up resistor low pressure end and ground connection.Described polaroid is arranged on the front portion of the optical window of Pockers cell, and the transverse center of polaroid and Pockers cell transverse center are concentric.
In the described Pockers cell between copper base reflecting mirror and the Pockers cell housing, between optical window and the Pockers cell housing, KD
*All adopt silica gel to carry out vacuum seal between P crystal and the Pockers cell housing.
Discharge cavity inside is filled with the He gas of 3000Pa～4500Pa in the described Pockers cell, and discharge cavity is by the air inlet static sealed-off of mouth of bleeding.
The large scale electro-optic crystal that can grow at present has KDP and KD
*P, KD
*The absorption coefficient of P approximately is 1/10th of a KDP absorption coefficient, so KD
*P becomes the first-selected electro-optic crystal of making larger caliber average power Pockers cell.The present invention utilizes KD
*The longitudinal electro-optic effect of P, using plasma and copper base compound electrode apply switching pulse.The formed plasma of gas discharge has optical clear high conductivity characteristics, is the ideal electrode that applies heavy caliber high-contrast Pockers cell longitudinal pumping electric field.Copper has good conduction, heat conduction and machining property, in the present invention copper base reflecting mirror while collector, heat sink.Reflecting plasma electro-optical switch makes an end face of electro-optic crystal free from hypobaric, utilizes the copper end face cooling electro-optic crystal of big thermal conductivity.This cooling structure heat transferred path is short, the cooling effectiveness height, and vertically cooling has avoided horizontal cooling means to heat the transverse temperature gradient that causes by calorie simultaneously, thereby can realize the high-efficiency heat pipe reason of Pockers cell.In reflecting plasma electro-optical switch, the heavy cooling effect key to the switch crystal of copper is the Mechanical Contact degree between the two.In order to reduce thermal contact resistance, crystal in the switch and copper base reflecting mirror are close to, be coated with fluid sealant in the surface of contact periphery, put into vacuum chamber then and be evacuated down to the hundreds of handkerchief, to reduce air filling fraction between the crystal in copper base reflecting mirror and the switch, increase contact area between the two, reduce thermal contact resistance.In addition, vacuumize the air pressure load that can greatly reduce switch crystal both sides, ambient atmosphere pressure is carried in the copper substrate.Otherwise, when plasma Pockers cell arc chamber vacuumizes, very possible broken ring switch crystal.
In the present invention, the switching function of realizing incident laser is used in the combination of Pockers cell and polaroid.When static, be parallel to polaroid rise folk prescription to linearly polarized light, vertical successively transmission-polarizing sheet, window, electro-optic crystal, incident laser is returned along original optical path by the reflection of copper base reflecting mirror then.In the time of dynamically, before laser arrives, apply switching pulse between copper electrode and discharge cavity, at first the unified interior evenly plasma of high conductivity of the breakdown formation of inert gas in the discharge cavity is carried on the electro-optic crystal by copper electrode and plasma electrode switching pulse voltage then.Line polarisation polarization direction turned over 45 ° after incident laser saw through the crystal that polarizes, and the crystal polarization direction by polarization rotates 45 ° once more once more after mirror reflects.When laser arrived polaroid, polarization state was polarized sheet and reflects outside the chamber perpendicular to polaroid.Make when realizing the electrooptical switching function that like this high-efficiency heat pipe reason becomes possibility.
Reflecting plasma electro-optical switch of the present invention has that bore is big, driving voltage is low, light absorption is little, cost is low, be easy to characteristics such as heat management, and locking is doomed in accent Q, isolation and the pulse that can be used for heavy caliber high-average power laser system.
Description of drawings
Fig. 1 is the side structure synoptic diagram of the Pockers cell in the reflecting plasma electro-optical switch of the present invention.
Fig. 2 is the Facad structure synoptic diagram of the Pockers cell in the reflecting plasma electro-optical switch of the present invention.
Fig. 3 is electrode retaining collar and tapered electrode needle construction synoptic diagram among the present invention
The conoscopic interference CCD photo that Fig. 4 obtains during for reflecting plasma electro-optical switch performance test of the present invention.
The chopped waveform that Fig. 5 obtains during for the reflecting plasma electro-optical switch performance test among the present invention.
Among Fig. 1: 1. housing 2.KD
*The P crystal 3. optical window 4. bronze medal base reflecting mirrors 5. electrode tip holders 6. admission piece 7. discharge cavities 8. poles 9. bases 10. taper spray points 11. electrode retaining collars 12. square holes of bleeding
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
Reflecting plasma electro-optical switch of the present invention can be scaled to heavy caliber, is easy to realize the high-efficiency heat pipe reason simultaneously, thereby has solved the essential elements electrooptical switching is run in the high-average power large-caliber laser system a bore restriction and the dual difficult problem of thermal effect.
In Fig. 1～3, a kind of reflecting plasma electro-optical switch comprises Pockers cell and a polaroid that has been used for inclined to one side and analyzing; Wherein Pockers cell contains Pockers cell housing 1, KD
*P crystal 2, optical window 3, discharge cavity 7, taper spray point 10, electrode retaining collar 11, electrode tip holder 5, the admission piece 6 of bleeding, base 9.Also contain copper base reflecting mirror 4 in the Pockers cell of described electrooptical switching.The annexation of described Pockers cell is that Pockers cell housing 1 middle part is provided with and is used to inlay KD
*The square hole 12 of P crystal.KD
*In the bonding square hole 12 that is embedded in the Pockers cell housing 1 of P crystal 2, KD
*Be respectively arranged with copper base reflecting mirror 4 and discharge cavity 7, copper base reflecting mirror 4 and KD on two faces of P crystal 2
*The P crystal is close to setting.Be outside equipped with optical window 3 at discharge cavity 7.Be provided with electrode retaining collar 11 in the discharge cavity 7, electrode retaining collar 11 is connected with taper spray point 10 by screw thread.Electrode tip holder 5 fixed bondings are on Pockers cell housing 1, and the inner of electrode tip holder 5 is connected with electrode retaining collar 11, and the outer end of electrode tip holder 5 is connected with pulse producer pull-up resistor high-pressure side.Pockers cell housing 1 is provided with the air inlet mouth 6 of bleeding, and the air inlet mouth 6 of bleeding is communicated with discharge cavity 7.Pockers cell is fixedly installed on the base 9 by pole 8; Copper base reflecting mirror 4 in the Pockers cell is connected with external pulse producer pull-up resistor low pressure end and ground connection.Described polaroid is arranged on the front portion of the optical window 3 of Pockers cell, and the transverse center of polaroid and Pockers cell transverse center are concentric.
In the described Pockers cell between copper base reflecting mirror 4 and the Pockers cell housing 1, between optical window 3 and the Pockers cell housing 1, KD
*All adopt silica gel to carry out vacuum seal between P crystal 2 and the Pockers cell housing 1.
Several taper spray points 10 are fixed on electrode retaining collar 11 inboards equably, and the taper spray point adopts the lower cerium tungsten alloy material of work function to make.
The course of work of reflecting plasma electro-optical switch of the present invention is as follows: the switching function of realizing incident laser is used in Pockers cell and polaroid combination.When static, be parallel to polaroid rise folk prescription to linearly polarized light, vertical successively transmission-polarizing sheet, optical window 3, KD
*The P crystal 2, incident laser is returned along original optical path by 4 reflections of copper base reflecting mirror then.In the time of dynamically, before laser arrives, between copper base reflecting mirror 4 and discharge cavity 7, apply switching pulse, at first the unified interior evenly plasma of high conductivity of the breakdown formation of inert gas in the discharge cavity is carried on the electro-optic crystal by copper electrode and plasma electrode switching pulse voltage then.Line polarisation polarization direction turned over 45 ° after incident laser saw through the crystal that polarizes, and passed through the KD of polarization after 4 reflections of copper base reflecting mirror once more
*P crystal 2 polarization direction rotates 45 ° once more.When laser arrived polaroid, polarization state was polarized sheet and reflects outside the chamber perpendicular to polaroid, thereby realized switching function.
In the high-average power laser system, the linear absorption owing to incident laser will produce heat deposition in the electro-optic crystal.Be the control thermal effect, can adopt cooling technologies such as air-cooled, microchannel, heat pipe that copper base reflecting mirror 4 is forced cooling, thereby with KD
*Heat is taken away in the P crystal 2.
In order to investigate reflecting plasma Pockers cell electrooptical switching performance, static quenching ratio, dynamic switch efficient are tested.The static quenching ratio was greater than 971: 1 in Pockers cell was unified.The conoscopic interference CCD photo that Fig. 4 obtains during for reflecting plasma electro-optical switch performance test of the present invention.As can be seen from the figure, KD
*P crystal dress school stress can be ignored, and is little to the influence of reflecting plasma electro-optical switch extinction ratio.The chopped waveform that Fig. 5 obtains during for the reflecting plasma electro-optical switch performance test among the present invention.Last surface curve is the reflecting plasma electro-optical switch driving voltage waveform, and following surface curve is a continuous light chopped waveform of utilizing reflecting plasma electro-optical switch to obtain.Experiment measuring obtains reflecting plasma electro-optical switch dynamic switch efficient of the present invention greater than 99.5%.
Claims (3)
1. a reflecting plasma electro-optical switch comprises Pockers cell and a polaroid that has been used for inclined to one side and analyzing; Wherein Pockers cell contains Pockers cell housing (1), KD
*P crystal (2), optical window (3), discharge cavity (7), taper spray point (10), electrode retaining collar (11), electrode tip holder (5), the admission piece of bleeding (6), base (9); It is characterized in that: also contain copper base reflecting mirror (4) in the Pockers cell of described electrooptical switching; The annexation of described Pockers cell is that Pockers cell housing (1) middle part is provided with and is used to inlay KD
*The square hole of P crystal (12); KD
*In the bonding square hole (12) that is embedded in the Pockers cell housing (1) of P crystal (2), KD
*Be respectively arranged with copper base reflecting mirror (4) and discharge cavity (7) on two faces of P crystal (2), copper base reflecting mirror (4) and KD
*The P crystal is close to setting; Be outside equipped with optical window (3) at discharge cavity (7), be provided with electrode retaining collar (11) in the discharge cavity (7), electrode retaining collar (11) is connected with taper spray point (10) by screw thread; Electrode tip holder (5) fixed bonding is on Pockers cell housing (1), and the inner of electrode tip holder (5) is connected with electrode retaining collar (11), and the outer end of electrode tip holder (5) is connected with pulse producer pull-up resistor high-pressure side; Pockers cell housing (1) is provided with the admission piece of bleeding (6), and the admission piece of bleeding (6) is communicated with discharge cavity (7); Pockers cell is fixedly installed on the base (9) by pole (8); Copper base reflecting mirror (4) in the Pockers cell is connected with external pulse producer pull-up resistor low pressure end and ground connection; Described polaroid is arranged on the front portion of the optical window (3) of Pockers cell, and the transverse center of polaroid and Pockers cell transverse center are concentric.
2. reflecting plasma electro-optical switch according to claim 1 is characterized in that: in the described Pockers cell between copper base reflecting mirror (4) and the Pockers cell housing (1), between optical window (3) and the Pockers cell housing (1), KD
*All adopt silica gel to carry out vacuum seal between P crystal (2) and the Pockers cell housing (1).
3. reflecting plasma electro-optical switch according to claim 1 is characterized in that: discharge cavity in the described Pockers cell (7) inside is filled with the He gas of 3000Pa～4500Pa, and discharge cavity (7) is by the static sealed-off of the admission piece of bleeding (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010003664 CN101819336B (en) | 2010-01-05 | 2010-01-05 | Reflecting plasma electro-optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010003664 CN101819336B (en) | 2010-01-05 | 2010-01-05 | Reflecting plasma electro-optical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101819336A CN101819336A (en) | 2010-09-01 |
| CN101819336B true CN101819336B (en) | 2011-09-28 |
Family
ID=42654494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010003664 Expired - Fee Related CN101819336B (en) | 2010-01-05 | 2010-01-05 | Reflecting plasma electro-optical switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101819336B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928999B (en) * | 2012-11-08 | 2018-05-08 | 中国科学院光电研究院 | Double electro-optic switching devices of High Extinction Ratio can be achieved |
| CN103197442A (en) * | 2013-03-12 | 2013-07-10 | 中国科学院上海光学精密机械研究所 | Reflection-type electro-optical switch provided with transparent conductive film |
| CN109387951B (en) * | 2018-12-07 | 2023-09-22 | 中国工程物理研究院激光聚变研究中心 | Assembling and calibrating process for single-aperture electro-optical switch |
| CN112558288B (en) * | 2020-11-23 | 2021-09-03 | 山东大学 | Time division multiplexing multi-window vane type rapid mechanical optical switch based on piezoelectric drive |
-
2010
- 2010-01-05 CN CN 201010003664 patent/CN101819336B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101819336A (en) | 2010-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Rothhardt et al. | High-repetition-rate and high-photon-flux 70 eV high-harmonic source for coincidence ion imaging of gas-phase molecules | |
| CN101819336B (en) | Reflecting plasma electro-optical switch | |
| JP6071889B2 (en) | Electro-optic device having a gap-coupled electrode | |
| US7653100B2 (en) | Solid laser module, optical amplifier, and laser oscillator | |
| CN201853942U (en) | Electro-optic Q-switched solid-state laser with variable pulse width | |
| CN108039639A (en) | Multi-pass ultrashort pulse laser amplifier based on single crystal optical fiber polarization control | |
| CN204103242U (en) | A kind of high power single longitudinal mode ultraviolet all-solid-state laser | |
| CN104201556A (en) | High-power single-longitudinal-mode ultraviolet all-solid-state laser | |
| CN102570272A (en) | Picosecond laser pulse regenerative amplifier | |
| CN103050870B (en) | Novel microchip laser supporting optical fiber output | |
| CN104953455A (en) | Kerr-lens mode-locked solid sheet laser device | |
| CN105896259B (en) | Q-switch Nd:YAG laser pulse width narrows technology | |
| CN201707514U (en) | Reflection-type plasma electro-optical switch | |
| CN207542560U (en) | Multi-pass ultrashort pulse laser amplifier based on single crystal optical fiber polarization control | |
| Wang et al. | A high-power high-stability Q-switched green laser with intracavity frequency doubling using a diode-pumped composite ceramic Nd: YAG laser | |
| CN101345389B (en) | Full-solid state five-wavelength simultaneously outputting laser device and 5-wavelength laser generation method | |
| CN107658689A (en) | Water-cooling type bicrystal Pockers cell | |
| CN102946043B (en) | Electric light and optically-active thermal effect compensation complex function callium-lanthanum silicate crystal Q-switched laser | |
| CN113451870B (en) | High-power laser suitable for extreme environment and laser generation method thereof | |
| CN201781186U (en) | Solid laser capable of outputting laser with high polarization ratio | |
| CN106025785B (en) | Mixed electrode pockels cell and time-sharing loop-dividing driving method | |
| Huang et al. | Electro-optically Q-switched 946 nm laser of a composite Nd: YAG crystal | |
| CN102201644A (en) | Low-temperature Yb: YAG regenerative amplifier | |
| CN101621174B (en) | DKDP crystal plasma pole Pockels cell driven by single pulse | |
| CN105322429A (en) | Semiconductor laser end plane pumping Er: YSGG electro-optical Q-switched laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110928 Termination date: 20140105 |