CN101817499B - Nanoscale gap electrode pair array and preparation method thereof - Google Patents
Nanoscale gap electrode pair array and preparation method thereof Download PDFInfo
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- CN101817499B CN101817499B CN201010158860XA CN201010158860A CN101817499B CN 101817499 B CN101817499 B CN 101817499B CN 201010158860X A CN201010158860X A CN 201010158860XA CN 201010158860 A CN201010158860 A CN 201010158860A CN 101817499 B CN101817499 B CN 101817499B
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Abstract
The invention provides a nanoscale gap electrode pair array and a preparation method thereof, and belongs to the technical field of preparation of molecular electronic devices. A metal particle array is formed on the surface of a carbon nano tube by oxidation-reduction reaction; all or a part of the carbon nano tube between metal particles is removed by bombarding with oxygen plasmas; and then the nanoscale gap electrode pair array is obtained. The preparation method is simple in operation, reliable in process, good in controllability and low in cost. The nanoscale (including molecular scale or atomic scale) gap electronic device array can be easily prepared by subsequent assembly technology for a molecular or atomic or nano structural material.
Description
Technical field
The present invention relates to the key technology of molecular electronic device preparation, specifically is a kind of nano-scale gap electrode pair array and preparation method thereof.
Background technology
Molecular electronic device might be as the primary element in the following super large-scale integration, and its material possibly be individual molecule, supermolecule or cluster etc.Molecular electronic device adopts micro-processing technology and assembling complex art that above-mentioned material is assembled between the electrode pair usually at present, so the spacing between the electrode pair can only be nanoscale (abbreviating the nano-scale gap electrode pair as).The key technology of development molecular electronic device is a mass preparation nano-scale gap electrode pair array how, only addresses this problem just the circuit that might molecular electronic device be taken on a certain scale.
Recent years, how the researcher solved this difficult problem in research; The electrode gap of conventional lithographic techniques processing is generally micron dimension; Even novel photoetching technique (like beamwriter lithography) also can only prepare the gap of hundred nanometer scale; Reach below the tens nanometer or molecular scale gap difficulty very big, let alone mass preparation.The existing method for preparing the nano-scale gap electrode pair has: mechanical breaking technology, electromigration fracture metal nano line technology and electrochemical deposition technique; But these method complex process, poor controllability; And only can prepare single electrode pair; The array that can't prepare electrode pair especially can't be along array a certain or specific direction realization nano-scale gap electrode pair.
Summary of the invention
The object of the present invention is to provide a kind of preparation nano-scale gap electrode pair array method.
Technical scheme of the present invention is following:
A kind of nano-scale gap electrode pair array; It is characterized in that, on carbon nano tube surface, be arranged with the metallic particles array, the metallic particles spacing is between the 1-500 nanometer; CNT between the above-mentioned metallic particles is all or part of to be removed, and forms the electrode pair array of nano-scale gap.
CNT can be multi-walled carbon nano-tubes, double-walled carbon nano-tube, SWCN or CNT tube bank.
Metallic particles can be gold grain, silver-colored particle, platinum grain or copper particle.
A kind of preparation method of nano-scale gap electrode pair array, its step comprises:
1) on backing material the preparation a pair of micro-meter scale metal electrode, this metal electrode on be connected with one or more CNT, on above-mentioned metal electrode, draw wire;
2) said structure is immersed in one and contains in the metal ion solution, above-mentioned wire and said solution metal ion generation redox reaction form the metallic particles array on carbon nano tube surface;
3) said structure is taken out from solution, after cleaning, drying,, get rid of the CNT between the metallic particles is all or part of, can obtain the nano-scale gap electrode pair array with oxygen plasma bombardment.
In metal activity sequence list, wire is positioned at before the metal ion, and the oxidation-reduction potential of promptly said solution metal ion is higher than wire.If wire is aluminium, iron, zinc or tin, solution is platinum acid chloride solution, chlorauric acid solution, copper nitrate solution or silver ammino solution.
The concrete technological parameter of oxygen plasma bombardment is: oxygen flow is 20～200mL/min; Microwave power is 100W～300W; Vacuum is 20mTorr～100mTorr; Reaction time is 10s～600s.
The micro-meter scale metal electrode can be Au, Pt or Pd metal material through photoetching in traditional microelectronic technique and lift-off technology preparation.
Backing material can be Si/SiO2, quartz, glass or soft thin polymer film.
Technological merit of the present invention and effect:
The present invention utilizes redox reaction, goes up the periodic structure that forms a large amount of metal nanoparticles-Nano carbon tube-metal nano particle repeatability at single-root carbon nano-tube (bundle).Through the concentration and the reaction time of control metal ion solution; Distance between the metallic particles is controlled in the nanoscale scope; Remove the CNT between the particle is all or part of with oxygen plasma bombardment method then, then can go up and form a nano-scale gap electrode pair array at single-root carbon nano-tube (bundle).
Utilize the present invention to prepare the method for the electrode pair array of nano-scale gap, can realize the nano-scale gap electrode pair array along a certain or specific direction.Through the follow-up molecular atoms or the package technique of nano structural material, can more easily realize nanoscale (comprising molecule or atomic scale) electronic device array.
Operation sequence of the present invention is simple, and technology is reliable, controllability good, cost is low.
Description of drawings
Below in conjunction with accompanying drawing the present invention is explained in further detail:
Fig. 1 is the schematic flow sheet of preparation nano-scale gap electrode pair array;
Fig. 2 is an ESEM picture of arranging the metallic particles array on the carbon nano tube surface;
The sketch map of the nano-scale gap metal electrode after Fig. 3 all removes the CNT between the metallic particles;
The sketch map of the nano-scale gap electrode that Fig. 4 partly removes the CNT between the metallic particles.
Wherein, 1-substrate; The 2-electrode; The 3-CNT; The 4-wire; 5-contains metal ion solution; The 6-metallic particles.
The specific embodiment
Following reference accompanying drawing of the present invention is described embodiments of the invention in detail.
1) at first utilizes the chemical vapor deposition (CVD) technology, at Si/SiO
2Carbon nano-tube on the substrate utilizes photoetching and stripping means to prepare the micro-meter scale metal electrode then, and makes metal electrode contact (like Fig. 1 a) with CNT.
Backing material Si/SiO
2Middle SiO
2Can be that thickness can be selected: 100～500nm with the method for thermal oxide or the method preparation of chemical vapour deposition (CVD).
Metal electrode material can be selected Au, Pt or Pd; Thickness can be selected: 100～500nm; Width can be selected: 50～300 μ m; Spacing can be selected between the electrode pair: 10～100 μ m;
2) on the micro-meter scale metal electrode, draw aluminium wire (like Fig. 1 b);
All structures that 3) will comprise aluminium wire are immersed in (like Fig. 1 c) in the chlorauric acid solution, and the gold ion in the metallic solution can be reduced, be deposited on carbon nano tube surface, and forms gold nano grain array (like Fig. 1 d) gradually;
Through control solution concentration and reaction time, the size and the spacing of control deposited gold nano particle.Solution concentration can be selected: 0.01～1mM/L; Reaction time range: 1 second～10 minutes;
The ESEM picture of the gold nano grain array that Fig. 2 makes for the present invention.As shown in Figure 2, the spacing of metallic particles is a nanoscale.
6) total is taken out from solution, cleaned, will remain in that solution blows off on the slice, thin piece, and dry (like Fig. 1 d) with nitrogen gun;
7) this structure is placed the oxygen plasma generator,, get rid of the CNT between the metallic particles is all or part of, form the nano-scale gap electrode pair array through the parameter and the reaction time of control oxygen plasma.
The technological parameter of oxygen plasma bombardment is that the oxygen flow of oxygen plasma can be selected: 20～200mL/min; Microwave power: 100W～300W; Vacuum: 20mTorr～100mTorr; Reaction time: 10s～600s.
Can comprise in this array that two ends are to comprise in this array of metallic particles that two ends are that the electrode pair (as shown in Figure 3) of metallic particles, an electrode pair (as shown in Figure 4) or the end that two ends are CNT are that CNT, the other end are that the metallic particles ground electrode is right.
Though this specification is described the present invention in detail through above-mentioned concrete embodiment; But it should be appreciated by those skilled in the art; Implementation of the present invention is not limited to the description scope of embodiment, and for example backing material can also be quartz, glass or soft thin polymer film; And the oxidation-reduction potential that GOLD FROM PLATING SOLUTION belongs to ion is higher than wire, and wire can also be iron, zinc or tin except that aluminium, and solution can be selected solution such as platinum acid chloride solution, copper nitrate solution or silver ammino solution.
In addition, CNT can be multi-walled carbon nano-tubes, double-walled carbon nano-tube, SWCN or CNT tube bank.
In addition, metal electrode can also be Pt or Pd metal material except that Au.
The foregoing description is of the present invention giving an example; Although disclose embodiments of the invention and accompanying drawing for the purpose of illustration; But it will be appreciated by those skilled in the art that: in the spirit and scope that do not break away from the present invention and appended claim, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (7)
1. nano-scale gap electrode pair array; It is characterized in that, on carbon nano tube surface, be arranged with Au, Pt; Ag or Cu metallic particles array; The metallic particles spacing is between the 1-500 nanometer, and the CNT between the above-mentioned metallic particles is all or part of to be removed, and forms the electrode pair array of nano-scale gap.
2. electrode pair array as claimed in claim 1 is characterized in that, CNT is multi-walled carbon nano-tubes, double-walled carbon nano-tube, SWCN or CNT tube bank.
3. the preparation method of a nano-scale gap electrode pair array, its step comprises:
1) a pair of micro-meter scale metal electrode of preparation on backing material, metal electrode material is selected Au, Pt or Pd; Thickness is selected: 100～500nm; Width is selected: 50～300 μ m; Spacing is selected between the electrode pair: 10～100 μ m, this metal electrode on be connected with one or more CNT, on above-mentioned metal electrode, draw wire;
2) said structure being immersed in one contains in the metal ion solution; Above-mentioned wire and said solution metal ion generation redox reaction; On carbon nano tube surface, form the metallic particles array, the oxidation-reduction potential of said solution metal ion is higher than wire, when wire is selected from aluminium, iron, zinc or tin; Solution is platinum acid chloride solution, chlorauric acid solution, copper nitrate solution or silver ammino solution, and solution concentration is selected: 0.01～1mM/L; Reaction time range: 1 second～10 minutes;
3) said structure is taken out from solution, after cleaning, drying,, get rid of the CNT between the metallic particles is all or part of, can obtain the nano-scale gap electrode pair array with oxygen plasma bombardment.
4. method as claimed in claim 3 is characterized in that: CNT is multi-walled carbon nano-tubes, double-walled carbon nano-tube, SWCN or CNT tube bank.
5. like claim 3 or 4 described methods, it is characterized in that: in the step 3), the concrete parameter of oxygen plasma bombardment is: oxygen flow is 20～200mL/min; Microwave power is 100W～300W; Vacuum is 20mTorr～100mTorr; Reaction time is 10s～600s.
6. method as claimed in claim 3 is characterized in that: the micro-meter scale metal electrode is through photoetching in traditional microelectronic technique and lift-off technology preparation.
7. method as claimed in claim 3 is characterized in that: backing material is Si/SiO
2, quartzy, glass or soft thin polymer film.
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| CN102730625B (en) * | 2011-04-02 | 2014-12-10 | 中国科学院化学研究所 | Method for constructing microelectrode pair array on surface of silicon chip containing hydrophobic silicon column |
| CN110459461B (en) * | 2019-07-31 | 2021-09-17 | 烯湾科城(广州)新材料有限公司 | Cleaning method of silicon substrate |
| CN115132578B (en) * | 2022-09-01 | 2022-12-30 | 中国科学技术大学 | Electrode pair with nanogap and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1797723A (en) * | 2004-12-23 | 2006-07-05 | 北京大学 | Method for fabricating transistor of single electron based on Nano carbon tubes |
| CN101624171A (en) * | 2009-08-12 | 2010-01-13 | 中国科学院上海硅酸盐研究所 | Pt nano particle-carbon nano tube composite material, preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1797723A (en) * | 2004-12-23 | 2006-07-05 | 北京大学 | Method for fabricating transistor of single electron based on Nano carbon tubes |
| CN101624171A (en) * | 2009-08-12 | 2010-01-13 | 中国科学院上海硅酸盐研究所 | Pt nano particle-carbon nano tube composite material, preparation method and application thereof |
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