CN101812677B - Plasma-reinforced chemical vapor deposition process cavity - Google Patents
Plasma-reinforced chemical vapor deposition process cavity Download PDFInfo
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- CN101812677B CN101812677B CN2010101648846A CN201010164884A CN101812677B CN 101812677 B CN101812677 B CN 101812677B CN 2010101648846 A CN2010101648846 A CN 2010101648846A CN 201010164884 A CN201010164884 A CN 201010164884A CN 101812677 B CN101812677 B CN 101812677B
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- box body
- cavity
- plasma
- vapor deposition
- chemical vapor
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Abstract
The invention provides a plasma-reinforced chemical vapor deposition process cavity. Airflow in the process cavity is obstructed by arranging a protective cover at the periphery of a packing box of a power cord of a heater, so that the airflow can not be blown to any one side in a left box body and a right box body of the packing box of the power cord of the heater, and the condition that the risk of stop of the process cavity caused by grounded short circuit can not exist in the power cord of the heater can be ensured.
Description
Technical field
The present invention relates to unicircuit and manufacture field, particularly a kind of plasma-reinforced chemical vapor deposition process cavity.
Background technology
Plasma-reinforced chemical vapor deposition is normally for deposition film on the base material of semiconductor wafer.Plasma-reinforced chemical vapor deposition (PECVD) is generally to realize by reactant gases being introduced to process cavity and being made reactant gases produce plasma body by the RF reactor.Please refer to Fig. 1, the plasma-reinforced chemical vapor deposition process cavity structural representation that Fig. 1 is prior art.As shown in Figure 1, in prior art, plasma-reinforced chemical vapor deposition process cavity comprises cavity 101, is positioned at the battery lead plate 102 at described cavity 101 tops and the heating support component 103 that is positioned at described cavity 101 bottoms, described heating support component 103 is for placing semiconductor wafer 100 and described semiconductor wafer 100 being heated, described heating support component 103 comprises well heater 105 and supporting walls 104, described well heater 105 is for heating and supporting described semiconductor wafer 100, and described supporting walls 104 is fixed in the bottom of described cavity 101 and supports fixing described well heater 105, described well heater 105 times, also be provided with heater power lead encapsulation box 106 and off-gas pump Link Port 107 in the space that described supporting walls 104 encloses, the supply lead 108 of described well heater 105 connects to be positioned at the outer power supply of cavity 101 and to enter described cavity 101 through the bottom of described cavity 101 and is connected on described well heater 105, one end of described off-gas pump Link Port 107 connects the venting hole on described well heater 105, the other end connects the top that is positioned at the outer described cavity 101 of off-gas pump 109 of described cavity 101 and has reactant gases inlet mouth 110, described battery lead plate 102 is connected on described reactant gases inlet mouth 110, described battery lead plate 102 surfaces have a lot of gas diffusion holes, described battery lead plate 102 can have a plurality of, be connected on other inlet mouths 110 of described reaction, described battery lead plate 102 also connects the radio-frequency power supply 111 be positioned at outside described cavity 101 simultaneously.
While in described process cavity, carrying out chemical vapor deposition, reactant gases enters described inlet mouth 110, by described battery lead plate 102, diffuse in described cavity 101, described radio-frequency power supply 111 is applied to the radio frequency power produced on described battery lead plate 102 makes the reactant gases in described cavity 101 be activated into plasma, after the gas reaction be excited, on the described semiconductor wafer 100 be positioned on described heating support component 103, form deposited film.In the process of deposited film, described semiconductor wafer 100 is heated by the well heater 105 in described heating support component 103, to promote surface reaction and to reduce undesirable impurity, produces.Described heating support component 103 is generally ground connection, thereby described radio-frequency power supply 111 is applied on described battery lead plate 102, produces radio frequency power.If very easily cause described supply lead 108 ground connection to be short-circuited but the supply lead 108 that is positioned at the described well heater 105 of described heating support component 103 is exposed to outer words, therefore, also be provided with heater power lead encapsulation box 106 in described heating support component 103, after making described supply lead 108 bottom by described cavity 101 entering described cavity 101 from described cavity 101, supply lead 108 between described well heater 105 and described cavity 101 bottoms is encapsulated by described heater power lead encapsulation box 106, to avoid described supply lead 108 ground connection to be short-circuited.The structure of the encapsulation of heater power lead described in prior art box 106 is as shown in Fig. 2 a-Fig. 2 b, comprise chassis 201, left box body 202 and right box body 203, described left box body 202 and right box body 203 can dock closure, the closed place of the docking of described left box body 202 and described right box body 203 is provided with respectively the semicircular breach of the relative hollow of direction, when described left box body 202 and right box body 203 docking closure, the closed manhole 204 that forms of the semicircle breach of described two relative hollows, also be provided with a hollow hole 205 on described chassis 201; Be positioned over after described left box body and right box body closure on described chassis 201 and form described heater power lead encapsulation box 106.Described supply lead 108 enters the hollow hole 205 on described chassis 201 from described cavity 101 behind the bottom by described cavity 101, and then, through described left box body and the closed manhole 204 formed of right box body, finally is connected on described well heater 105.
But because the volatile by-product produced in reaction can be extracted out by the venting hole on described well heater 105 and described off-gas pump Link Port 107 by described off-gas pump 109, thereby make the air pressure at described off-gas pump Link Port 107 places lower than the elsewhere in cavity 101, therefore can by described cavity 101 surroundings, to described off-gas pump Link Port 107 places, be flowed in the interior formation of described cavity 101 than air flow, and it is thinner near the right box body 203 on the described heater power lead encapsulation box 106 of described off-gas pump Link Port 107, often can be blown down by said flow, from and can make described supply lead 108 is exposed to, cause the danger of described supply lead 108 possibility ground short circuits.Once described supply lead 108 ground short circuits, will cause whole process cavity to shut down.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of plasma-reinforced chemical vapor deposition process cavity; a side box body with heater power lead encapsulation box in the plasma-reinforced chemical vapor deposition process cavity that solves prior art is easily pushed over by the air-flow in process cavity; heater power lead in process cavity is exposed to outside heater power lead encapsulation box; easily make the heater power lead ground short circuit, the problem that causes whole process cavity to shut down.
For solving the problems of the technologies described above, the invention provides a kind of plasma-reinforced chemical vapor deposition process cavity, comprise cavity, the heating support component that is positioned at the battery lead plate at described cavity top and is positioned at described cavity bottom, described heating support component comprises well heater and supporting walls, described well heater is used for heating and supporting described semiconductor wafer, described supporting walls is fixed in the bottom of described cavity and supports fixing described well heater, under described well heater, also be provided with heater power lead encapsulation box in the space that described supporting walls encloses, described heater power lead encapsulation box comprises chassis, left box body and right box body, described left box body and right box body can dock closure or open, the closed place of the docking of described left box body and described right box body is provided with respectively the semicircular breach of the relative hollow of direction, when described left box body and the docking of right box body are closed, the closed manhole that forms of the semicircle breach of described two relative hollows, also be provided with a hollow hole on described chassis, be positioned over after described left box body and right box body closure on described chassis and form described heater power lead encapsulation box, the supply lead of described well heater connects after being positioned at the outer power supply of cavity and entering described cavity through the bottom of described cavity and enters the hollow hole on described chassis, and then through described left box body and the closed manhole formed of right box body, finally be connected on described well heater, also comprise a protective guard, described protective guard comprises left side wall, right side wall and be fixed in described left side wall and described right side wall on top, described protective guard is positioned on the chassis of described heater power lead encapsulation box, cover on the left box body and right box body of described heater power lead encapsulation box, described left side wall is positioned at described left box body one side, described right side wall is positioned at described right box body one side.
Optionally, the material of described heater power lead encapsulation box is pottery.
Optionally, Al in described pottery
2O
3Purity>=99.5%.
Optionally, the material of described protective guard is pottery.
Optionally, Al in described pottery
2O
3Purity>=99.5%.
Plasma-reinforced chemical vapor deposition process cavity provided by the invention also arranges protective guard by the periphery at heater power lead encapsulation box and stops the air-flow in process cavity; the any side that makes air-flow can't blow down in the heater power lead encapsulation left box body of box and right box body, can guarantee the risk that heater power lead does not have ground short circuit, causes process cavity to shut down.
The accompanying drawing explanation
The plasma-reinforced chemical vapor deposition process cavity structural representation that Fig. 1 is prior art;
The structural representation of the heater power lead encapsulation box that Fig. 2 a-Fig. 2 b is prior art;
Fig. 3 is plasma-reinforced chemical vapor deposition process cavity structural representation of the present invention;
The heater structure schematic diagram that Fig. 4 is prior art;
The structural representation that Fig. 5 is protective guard in plasma-reinforced chemical vapor deposition process cavity of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Plasma-reinforced chemical vapor deposition process cavity provided by the invention can utilize multiple substitute mode to realize; below to be illustrated by preferred embodiment; certainly the present invention is not limited to this specific embodiment, and the known general replacement of one of ordinary skilled in the art is encompassed in protection scope of the present invention undoubtedly.
Secondly, the present invention utilizes schematic diagram have been described in detail, and when the embodiment of the present invention is described in detail in detail, for convenience of explanation, schematic diagram is disobeyed the local amplification of general ratio, should not using this as limitation of the invention.
Please refer to Fig. 3, Fig. 3 is plasma-reinforced chemical vapor deposition process cavity structural representation of the present invention.As shown in Figure 3, plasma-reinforced chemical vapor deposition process cavity of the present invention comprises cavity 101, is positioned at the battery lead plate 102 at described cavity 101 tops and the heating support component 103 that is positioned at described cavity 101 bottoms.
Described heating support component 103 is for placing semiconductor wafer 100 and described semiconductor wafer 100 being heated, described heating support component 103 comprises well heater 105 and supporting walls 104, described well heater 105 is for heating and supporting described semiconductor wafer 100, and described supporting walls 104 is fixed in the bottom of described cavity 101 and supports fixing described well heater 105.
The structure of described well heater 105 as shown in Figure 4, on described well heater 105 for placing the one side of described semiconductor wafer 100, its center has height lower than peripheral depressed part 301, described depressed part 301De center has a central row pore 302 that runs through described well heater 105, the surrounding of described well heater 105 is higher than the part of described depressed part 301 some grooves 303 that distributing, one end of described groove 303 leads to the outer rim of described well heater 105, and an end leads to described depressed part 301.
Also be provided with heater power lead encapsulation box 106 and off-gas pump Link Port 107 in the space enclosed at described well heater 105 times, described supporting walls 104; One end of described off-gas pump Link Port 107 connects the described central row pore 302 on described well heater 105, and the other end connects the off-gas pump 109 be positioned at outside described cavity 101.
The structure combination of described heater power lead encapsulation box 106 is referring to shown in Fig. 3 and Fig. 2 a-Fig. 2 b, comprise chassis 201, left box body 202 and right box body 203, described left box body 202 and right box body 203 can dock closure or open, the closed place of the docking of described left box body 202 and described right box body 203 is provided with respectively the semicircular breach of the relative hollow of direction, when described left box body 202 and right box body 203 docking closure, the closed manhole 204 that forms of the semicircle breach of described two relative hollows, also be provided with a hollow hole 205 on described chassis 201; Be positioned over after described left box body and right box body closure on described chassis 201 and form described heater power lead encapsulation box 106.The supply lead 108 of described well heater 105 connects after being positioned at the outer power supply of cavity 101 and entering described cavity 101 through the bottom of described cavity 101 and enters the hollow hole 205 on described chassis 201, and then through described left box body and the closed manhole 204 formed of right box body, finally be connected on described well heater 105, make the supply lead 108 between described well heater 105 and described cavity 101 bottoms be encapsulated by described heater power lead encapsulation box 106, be short-circuited to avoid described supply lead 108 ground connection.As a kind of embodiment, the material of chassis 201, left box body 202 and the right box body 203 of described heater power lead encapsulation box 106 is pottery, Al in this pottery
2O
3Purity>=99.5%.
The top of described cavity 101 has reactant gases inlet mouth 110, described battery lead plate 102 is connected on described reactant gases inlet mouth 110, described battery lead plate 102 surfaces have a lot of gas diffusion holes, described battery lead plate 102 can have a plurality of, be connected on described reactant gases inlet mouth 110, described battery lead plate 102 also connects the radio-frequency power supply 111 be positioned at outside described cavity 101 simultaneously.
For a side box body of guaranteeing described heater power lead encapsulation box 106 can not pushed over by the air-flow in described cavity 101; avoid making described heater power lead 108 to be exposed to outside described heater power lead encapsulation box 106, in plasma-reinforced chemical vapor deposition process cavity of the present invention, also on described heater power lead encapsulation box 106, also be provided with a protective guard 401.The structural representation that Fig. 5 is protective guard in plasma-reinforced chemical vapor deposition process cavity of the present invention; as shown in Figure 5; described protective guard 401 comprises left side wall 402, right side wall 403 and is fixed in the top 404 on described left side wall 402 and described right side wall 403; described protective guard 401 is positioned on the chassis 201 of described heater power lead encapsulation box 106; cover on the left box body and right box body of described heater power lead encapsulation box 106; described left side wall 402 is positioned at described left box body 202 1 sides, and described right side wall 403 is positioned at described right box body 203 1 sides.As a kind of embodiment, the material of described protective guard 401 is pottery, Al in this pottery
2O
3Purity>=99.5%.
While in plasma-reinforced chemical vapor deposition process cavity of the present invention, carrying out chemical vapor deposition, reactant gases enters described inlet mouth 110, by described battery lead plate 102, diffuse in described cavity 101, described radio-frequency power supply 111 is applied to the radio frequency power produced on described battery lead plate 102 makes the reactant gases in described cavity 101 be activated into plasma, after the gas reaction be excited, on the described semiconductor wafer 100 be positioned on described heating support component 103, form deposited film.In the process of deposited film, described semiconductor wafer 100 is heated by the well heater 105 in described heating support component 103, to promote surface reaction and to reduce undesirable impurity, produces.Described heating support component 103 is generally ground connection, thereby described radio-frequency power supply 111 is applied on described battery lead plate 102, produces radio frequency power.
For outside the supply lead 108 of avoiding the described well heater 105 in described heating support component 103 is exposed to, cause described supply lead 108 ground connection to be short-circuited, be provided with heater power lead encapsulation box 106 in described heating support component 103, after making described supply lead 108 bottom by described cavity 101 entering described cavity 101 from described cavity 101, the supply lead 108 between described well heater 105 and described cavity 101 bottoms is encapsulated by described heater power lead encapsulation box 106.
The volatile by-product produced in the process cavity inner reaction can be extracted out by the central row pore 302 on described well heater 105 and described off-gas pump Link Port 107 by described off-gas pump 109.Because described semiconductor wafer 100 is positioned on described well heater 105 on the part higher than described depressed part 301, and on described well heater 105 higher than the part of described depressed part 301 some grooves 303 that distributing, therefore the gas in process cavity can enter to described central row pore 302 by described groove 303, then is extracted out by described off-gas pump 109 via described off-gas pump Link Port 107.So not only can make the volatile by-product in process cavity be drawn out of, but also can more firm being adsorbed on described well heater 105 by the described semiconductor wafer 100 of air pressure official post.But thus, the air pressure at described off-gas pump Link Port 107 places is by the inevitable elsewhere interior lower than cavity 101, therefore can by described cavity 101 surroundings, to described off-gas pump Link Port 107 places, be flowed in the interior formation of described cavity 101 than air flow, and it is thinner near the right box body 203 on the described heater power lead encapsulation box 106 of described off-gas pump Link Port 107, easily by said flow, blown down, from and can make described supply lead 108 is exposed to, cause the danger that described supply lead 108 may ground short circuits.Once described supply lead 108 ground short circuits, will cause whole process cavity to shut down.In the present invention; for overcoming this defect; by the periphery at described heater power lead encapsulation box 106, described protective guard 401 also is set and stops said flow, any side that makes said flow can't blow down in the described heater power lead encapsulation left box body of box 106 and right box body.Can guarantee like this risk that described heater power lead 108 does not have ground short circuit, causes process cavity to shut down.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (5)
1. a plasma-reinforced chemical vapor deposition process cavity, comprise cavity, the heating support component that is positioned at the battery lead plate at described cavity top and is positioned at described cavity bottom, described heating support component comprises well heater and supporting walls, described well heater is for heating supporting semiconductor wafers, described supporting walls is fixed in the bottom of described cavity and supports fixing described well heater, under described well heater, also be provided with heater power lead encapsulation box in the space that described supporting walls encloses, described heater power lead encapsulation box comprises chassis, left box body and right box body, described left box body and right box body can dock closure or open, the closed place of the docking of described left box body and described right box body is provided with respectively the semicircular breach of the relative hollow of direction, when described left box body and the docking of right box body are closed, two closed manholes that form of the semicircular described breach of hollow, also be provided with a hollow hole on described chassis, be positioned over after described left box body and right box body closure on described chassis and form described heater power lead encapsulation box, the supply lead of described well heater connects after being positioned at the outer power supply of cavity and entering described cavity through the bottom of described cavity and enters the hollow hole on described chassis, and then through described left box body and the closed manhole formed of right box body, finally be connected on described well heater, it is characterized in that, also comprise a protective guard, described protective guard comprises left side wall, right side wall and be fixed in described left side wall and described right side wall on top, described protective guard is positioned on the chassis of described heater power lead encapsulation box, cover on the left box body and right box body of described heater power lead encapsulation box, described left side wall is positioned at described left box body one side, described right side wall is positioned at described right box body one side.
2. plasma-reinforced chemical vapor deposition process cavity as claimed in claim 1, is characterized in that, the material of described heater power lead encapsulation box is pottery.
3. plasma-reinforced chemical vapor deposition process cavity as claimed in claim 2, is characterized in that, Al in described pottery
2O
3Purity>=99.5%.
4. as the described plasma-reinforced chemical vapor deposition process cavity of arbitrary claim in claims 1 to 3, it is characterized in that, the material of described protective guard is pottery.
5. plasma-reinforced chemical vapor deposition process cavity as claimed in claim 4, is characterized in that, Al in described pottery
2O
3Purity>=99.5%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101648846A CN101812677B (en) | 2010-04-29 | 2010-04-29 | Plasma-reinforced chemical vapor deposition process cavity |
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| CN2010101648846A CN101812677B (en) | 2010-04-29 | 2010-04-29 | Plasma-reinforced chemical vapor deposition process cavity |
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| CN101812677A CN101812677A (en) | 2010-08-25 |
| CN101812677B true CN101812677B (en) | 2013-12-04 |
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| CN104862666B (en) * | 2014-02-25 | 2018-03-27 | 上海理想万里晖薄膜设备有限公司 | A kind of PECVD devices for being used to prepare AMOLED |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2572636Y (en) * | 2002-08-27 | 2003-09-10 | 叶尔买克 | Electric wire fixing box |
| CN101260520A (en) * | 2008-04-29 | 2008-09-10 | 奚建平 | Flat plate silicon nitride film PECVD deposition system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005159182A (en) * | 2003-11-27 | 2005-06-16 | Kyocera Corp | Method of processing plasma cvd apparatus |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2572636Y (en) * | 2002-08-27 | 2003-09-10 | 叶尔买克 | Electric wire fixing box |
| CN101260520A (en) * | 2008-04-29 | 2008-09-10 | 奚建平 | Flat plate silicon nitride film PECVD deposition system |
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| CN101812677A (en) | 2010-08-25 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |