CN101806508A - High temperature solar energy selective absorption coating and preparation method thereof - Google Patents
High temperature solar energy selective absorption coating and preparation method thereof Download PDFInfo
- Publication number
- CN101806508A CN101806508A CN 201010116609 CN201010116609A CN101806508A CN 101806508 A CN101806508 A CN 101806508A CN 201010116609 CN201010116609 CN 201010116609 CN 201010116609 A CN201010116609 A CN 201010116609A CN 101806508 A CN101806508 A CN 101806508A
- Authority
- CN
- China
- Prior art keywords
- film
- layer
- tial
- subgrade
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/40—Solar thermal energy, e.g. solar towers
Abstract
The invention discloses a high temperature solar energy selective absorption coating and a preparation method thereof. The coating comprises an infrared reflecting layer, an absorbing layer and an antireflection layer from the bottom layer to the surface, wherein the first infrared reflecting layer comprises any of a Ti film, an Al film or a TiAl alloy film, and is 50-250nm thick; the second absorbing layer comprises two sublayer structures which are both TiAlCN+TiAl films and are 50-100nm thick, and the volume percent of the first sublayer TiAl is greater than the volume percent of the second sublayer TiAl; and the third antireflection layer comprises any of a TiO2 film or an Al2O3 film and is 20-60nm thick. The infrared reflecting layer is prepared on a matrix surface by a pure metal target medium frequency magnetron sputtering method, the second absorbing layer is prepared on the first layer by a metal Ti target and Al target medium frequency magnetron sputtering method, and the third antireflection layer is prepared on the second layer by the metal target medium frequency magnetron sputtering method.
Description
Technical field
The present invention relates to technical field of solar utilization technique, be specifically related to a kind of high temperature solar energy selective absorption coating and preparation method thereof.
Background technology
Coating for selective absorption of sunlight spectrum has high-absorbility at the Visible-to-Near InfaRed wave band, has the function film of low-launch-rate at infrared band, is to be used for solar thermal collector, improves the key of photo-thermal conversion efficiency.Continuous development along with solar thermal utilization demand and technology, the range of application of solar energy heat collection pipe is used (100 ℃-350 ℃) and high temperature application (350 ℃-500 ℃) development from cryogenic applications (≤100 ℃) Xiang Zhongwen, constantly to satisfy the instructions for use of high-temperature applications in desalinization, the solar electrical energy generation etc.The coating for selective absorption that uses for thermal-collecting tube also will possess high high-temp stability, the service condition of hot environment in the adaptation.
Studied and be extensive use of black chromium, anode oxidation coloration Ni-Al2O3 at present and had the SS-C/SS (stainless steel) of composition gradual change feature and film system such as Al-N/Al for solar selectively absorbing coating, be applied to temperature on 200 ℃ of thermal-collecting tube surfaces with interior plate type heat collecting device.But under middle hot conditions, obviously raise because its infrared emittance rises with temperature, cause the heat collector heat loss obviously to rise, the thermal efficiency significantly descends.
Heat endurance for coating for selective absorption under the high temperature service condition in improving, material system such as Mo-Al2O3/Cu, SS-AlN/SS has obtained research and development, adopted two targets or many target metals pottery co-sputtering technology, wherein the characteristics of Mo-Al2O3/Cu system are many subgrades structures that the Mo-Al2O3 absorbed layer has the composition gradual change, the Al2O3 layer adopts RF sputtering method, the characteristics of SS-AlN/SS system are that absorbed layer has adopted the inteferometer coating structure, and heat endurance is improved.The high-temperature heat-gathering tube-surface has obtained application in the focus type of above-mentioned coating in 350 ℃ of-500 ℃ of scopes of serviceability temperature.But process deposits speed such as two targets or many target co-sputterings, radio-frequency sputtering are low, and the production cycle is long, complex process, cost height.
For the middle high temperature utilization of solar energy, need a kind of absorptivity height, low, the Heat stability is good of emissivity, and easy coating for selective absorption and the technology of preparing of technology.
Summary of the invention
The object of the present invention is to provide a kind of high temperature solar energy selective absorption coating and preparation method thereof, be applicable to high temperature (300 ℃-500 ℃) operating temperature thermal-collecting tube, coating absorptivity height, low, the Heat stability is good of emissivity, preparation technology is easy, easy to operate, with short production cycle, the sputter operating mode is stable.
A kind of high temperature solar energy selective absorption coating comprises trilamellar membrane, is followed successively by infrared reflecting layer, absorbed layer and antireflection layer from the bottom to the surface;
The ground floor infrared reflecting layer is by any composition the among Ti film, Al film or the TiAl alloy film, and thickness is at 50～250nm; Second layer absorbed layer comprises two subgrade structures, and two subgrades are the TiAlCN+TiAl film, and the thickness of first subgrade and second subgrade is 50～100nm, and the percent by volume of the first subgrade TiAl is greater than the percent by volume of the second subgrade TiAl; The 3rd layer of antireflection layer is by TiO
2Film or Al
2O
3Any composition in the film, thickness is 20～60nm.
A kind of preparation method of high temperature solar energy selective absorption coating comprises following step:
Step 1: preparation ground floor infrared emission layer on matrix;
Adopt the preparation of simple metal target medium frequency magnetron sputtering method at matrix surface, the simple metal target is Ti target or Al target, prepares Ti film, Al film or TiAl alloy film with Ar gas as sputter gas, and the infrared emission layer thickness is at 50～250nm;
Step 2: preparation second layer absorbed layer on the ground floor coating;
Adopt metal Ti target and Al target medium frequency magnetron sputtering method, feed Ar, N
2And C
2H
2Mist, the flow of Ar is 100～140sccm, N
2Flow be 30～60sccm, C
2H
2Flow be 5～8sccm, on infrared reflecting layer the preparation the first subgrade TiAlCN+TiAl film, thickness is 50～100nm;
Increase N
2Flow be 40～70sccm, continue the preparation second subgrade TiAlCN+TiAl film, thickness is 50～100nm;
Step 3: the 3rd layer of antireflection layer of preparation on the second layer;
The 3rd layer of antireflection layer is by TiO
2Perhaps Al
2O
3Film constitutes;
When by TiO
2When film constitutes: adopt Ti target intermediate frequency sputtering method, as sputter gas, feed O with Ar gas
2As the reacting gas preparation, regulate Ar and O
2Flow-rate ratio is 1.5: 1～2: 1, and preparation thickness is the TiO of 20～60nm
2Film;
When by Al
2O
3When film constituted: adopt Al target medium frequency magnetron sputtering method, feed inert gas Ar as sputter gas, preparation thickness was the Al of 20～60nm
2O
3Film.
The invention has the advantages that:
Coating for selective absorption provided by the present invention is by metallic red outer reflective layer, TiAlCN+TiAl and TiO
2Two absorbed layers and ceramic antireflection layers of interfering of forming of mixture form, has visible-infrared spectrum high-absorbility, the characteristics of infrared spectrum low-launch-rate, and since adopt high-melting point metal Ti and Ti the nitrogen carbide of Al, have good middle high high-temp stability.This preparation technology of coating is easy, easy to operate, be easy to control, shorten the production cycle, with coating for selective absorption by Nb infrared reflecting layer, Nb and Al
2O
3Two absorbed layers and Al of interfering of forming of mixture
2O
3Antireflection layer is compared, and the raw material Ti Al that this coating is selected is a conventional material, and range of application is wider, and processability is good, can be processed into the column target, significantly improves target utilization, and price is also cheaper simultaneously, can further reduce job costs.The solar energy heat collection pipe of hot operation temperature in being applicable to.
Description of drawings
Fig. 1 is the coating for selective absorption generalized section.
Among the figure:
The specific embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
The present invention is a kind of solar selective absorbing coating, and in conjunction with section as shown in Figure 1, coating comprises trilamellar membrane, is followed successively by infrared reflecting layer, absorbed layer and antireflection layer from the bottom to the surface;
The ground floor infrared reflecting layer is by any composition the among Ti film, Al film or the TiAl alloy film, and thickness is at 50～250nm; Second layer absorbed layer comprises two subgrade structures, two subgrades are the TiAlCN+TiAl film, the thickness of first subgrade and second subgrade is 50～100nm, the percent by volume of the first subgrade TiAl is bigger by 10% than the percent by volume of the second subgrade TiAl, the percent by volume of the first subgrade TiAl is that the percent by volume of 20～40%, the second subgrade TiAl is 10～30%; The 3rd layer of antireflection layer is TiO
2Film or Al
2O
3Film, optional one thickness is 20～60nm.
A kind of preparation method of solar selective absorbing coating comprises following step:
Step 1: preparation ground floor infrared emission layer on matrix;
Adopt simple metal target medium frequency magnetron sputtering method, the simple metal target is Ti target or Al target, prepares the matrix adopting high-speed steel as sputter gas with Ar gas.Before the sputter vacuum chamber is taken out base vacuum to 4 * 10 in advance
-3～5 * 10
-3Pa feeds inert gas Ar as sputtering atmosphere, and adjusting the sputter distance is 130～150mm, and regulating sputtering pressure is 3 * 10
-1～4 * 10
-1Pa.Open the sputtering target power supply of simple metal target, the adjustment sputtering voltage is 380～450V, and sputtering current is 8～10A, and the RF sputtering mode prepares in the utilization, and coating layer thickness is at 50～250nm, and this layer has high reflection characteristic to infrared band spectrum, and emissivity is low;
Step 2: preparation second layer absorbed layer on the ground floor coating;
Adopt metal Ti target and Al target medium frequency magnetron sputtering method, reacting gas is N
2And C
2H
2, at first, vacuum chamber is taken out base vacuum to 4 * 10 in advance
-3～5 * 10
-3Pa feeds Ar, N simultaneously then
2And C
2H
2Gaseous mixture, the flow of Ar is 100～140sccm, N
2Flow be 30～60sccm, C
2H
2Flow be 5～8sccm, regulating sputtering pressure is 3 * 10
-1～4 * 10
-1Pa opens Ti and Al target power supply respectively, during sputter, adjusting Ti target sputtering voltage is 380～450V, and sputtering current is 8～10A, and Al target sputtering voltage is 380～450V, sputtering current is 8～10A, the preparation first subgrade TiAlCN+TiAl film on infrared reflecting layer, and thickness is 50～100nm;
Increase N
2Flow be 40～70sccm, continue the preparation second subgrade TiAlCN+TiAl film, thickness is 50～100nm; First subgrade and second subgrade possess the intrinsic absorption characteristic solar spectrum except that self, also form and interfere sink effect, have strengthened the optical absorption of coating;
Step 3: the 3rd layer of antireflection layer of preparation on the second layer;
The 3rd layer of antireflection layer is by TiO
2Perhaps Al
2O
3Film constitutes;
When by TiO
2When film constitutes: adopt the Ti target, before the sputter vacuum chamber is taken out base vacuum to 4 * 10 in advance
-3～5 * 10
-3Pa as sputter gas, feeds O with Ar gas
2As the reacting gas preparation, regulate Ar and O
2Flow-rate ratio is 1.5: 1～2: 1, and adjusting the sputter distance is 130～150mm, and regulating sputtering pressure is 3 * 10
-1～4 * 10
-1Pa, during sputter, the adjustment sputtering voltage is 380～450V, sputtering current is 8～10A, utilizes the medium frequency magnetron sputtering mode to prepare the TiO that thickness is 20～60nm
2Film is antireflection layer.
When by Al
2O
3When film constitutes: adopt the Al target, before the sputter vacuum chamber is taken out base vacuum to 4 * 10 in advance
-3～5 * 10
-3Pa feeds inert gas Ar as sputter gas, and regulating sputtering pressure is 3 * 10
-1～4 * 10
-1Pa.During sputter, the adjustment sputtering voltage is 380～450V, and sputtering current is 8～10A, utilizes the medium frequency magnetron sputtering mode to prepare the Al that thickness is 20～60nm
2O
3Film is an antireflection layer.
Anti-reflection, wear-resisting, oxidation resistant effect that antireflection layer has.
Embodiment:
Prepare a kind of solar selectively absorbing coating, comprise that three coatings are ground floor infrared reflecting layer, second layer absorbed layer, the 3rd layer of antireflection layer, ground floor thickness is 100～250nm, second layer gross thickness is 110～150nm, wherein the first subgrade thickness is 60～80nm, the second subgrade thickness is 50～70nm, and the threeply degree is 30～50nm.Preparation process is as follows:
Step 1: preparation ground floor infrared emission layer on matrix;
Selecting the Ti target of purity 99.99% and purity for use is 99.99% Al target, and base material uses high-speed steel.Before the sputter vacuum chamber is taken out base vacuum to 4.5 * 10 in advance
-3～5 * 10
-3Pa feeds inert gas Ar as sputtering atmosphere, and adjusting the sputter distance is 140～150mm, and regulating sputtering pressure is 3.5 * 10
-1～4 * 10
-1Pa.Open Ti target and Al target, the adjustment sputtering voltage is 400～420V, and sputtering current is 8～8.5A, and the RF sputtering mode prepares the thick TiAl film of 100～250nm in the utilization;
Step 2: preparation second layer absorbed layer on the ground floor coating;
Adopt metal Ti target and Al target medium frequency magnetron sputtering method, feed Ar, N simultaneously
2And C
2H
2Gaseous mixture, the flow of Ar is 110～140sccm, N
2Flow be 40～60sccm, C
2H
2Flow be 6～8sccm, the adjusting sputtering pressure is 0.41～0.42Pa, open Ti and Al target power supply respectively, adjusting Ti target sputtering voltage is 410～420V, sputtering current is 8～8.5A, Al target sputtering voltage is 400～410V, and sputtering current is 8～8.3A, prepares the first thick subgrade TiAlCN+TiAl film of 60～80nm on the AlTi film;
Regulate N
2Flow be 50～70sccm, continuing preparation thickness is the second subgrade TiAlCN+TiAl film of 50～70nm;
Step 3: the 3rd layer of antireflection layer of preparation on the second layer;
Select the Ti target of purity 99.99% for use, before the sputter vacuum chamber is taken out base vacuum to 4.5 * 10 in advance
-3～5 * 10
-3Pa feeds Ar, O simultaneously
2Gaseous mixture is regulated Ar and O
2Flow-rate ratio is 2: 1～3: 1, and adjusting the sputter distance is 145～150mm, and the adjusting sputtering pressure is 0.41～0.42Pa, and during sputter, the adjustment sputtering current is 8～8.3A, and sputtering voltage is 400～420V, utilizes the medium frequency magnetron sputtering mode to prepare the thick TiO of 30～50nm
2Film.
The performance of the solar selectively absorbing coating of present embodiment preparation is as follows: under air quality factors A M1.5 condition, the coating absorptivity is 94.5%, and normal emittance is 0.08.Carry out vacuum annealing and handle, 2 * 10
-2Under the Pa vacuum, after 1 hour, the coating absorptivity is 94% through 350 ℃ of vacuum annealings, and normal emittance is 0.08,2 * 10
-2Under the Pa vacuum, after 1 hour, the coating absorptivity is 93% through 500 ℃ of vacuum annealings, and normal emittance is 0.08.
Claims (6)
1. a high temperature solar energy selective absorption coating is characterized in that coating comprises trilamellar membrane, is followed successively by infrared reflecting layer, absorbed layer and antireflection layer from the matrix to the surface;
The ground floor infrared reflecting layer is by any composition the among Ti film, Al film or the TiAl alloy film, and thickness is at 50～250nm; Second layer absorbed layer comprises two subgrade structures, and two subgrades are the TiAlCN+TiAl film, and the thickness of first subgrade and second subgrade is 50～100nm, and the percent by volume of the first subgrade TiAl is greater than the percent by volume of the second subgrade TiAl; The 3rd layer of antireflection layer is by TiO
2Film or Al
2O
3Any composition in the film, thickness is 20～60nm.
2. a kind of high temperature solar energy selective absorption coating according to claim 1 is characterized in that, the percent by volume of the first subgrade TiAl of described absorbed layer is bigger by 10% than the percent by volume of the second subgrade TiAl.
3. a kind of high temperature solar energy selective absorption coating according to claim 1 is characterized in that, the percent by volume of the first subgrade TiAl of described absorbed layer is 20～40%.
4. a kind of high temperature solar energy selective absorption coating according to claim 1 is characterized in that, the percent by volume of the second subgrade TiAl of described absorbed layer is 10～30%.
5. a kind of high temperature solar energy selective absorption coating according to claim 1 is characterized in that, described TiAlCN+TiAl film is to prepare by the following method:
Adopt metal Ti target and Al target medium frequency magnetron sputtering method, reacting gas is N
2And C
2H
2, at first, vacuum chamber is taken out base vacuum to 4 * 10 in advance
-3～5 * 10
-3Pa feeds Ar, N then
2And C
2H
2Gaseous mixture, the flow of Ar is 100～140sccm, N
2Flow be 30～60sccm, C
2H
2Flow be 5～8sccm, regulating sputtering pressure is 3 * 10
-1～4 * 10
-1Pa opens Ti and Al target power supply respectively, and during sputter, adjusting Ti target sputtering voltage is 380～450V, and sputtering current is 8～10A, and Al target sputtering voltage is 380～450V, and sputtering current is 8～10A, prepares the first subgrade TiAlCN+TiAl film; Increase N
2Flow, prepare the second subgrade TiAlCN+TiAl film.
6. the preparation method of a high temperature solar energy selective absorption coating is characterized in that, comprises following step:
Step 1: preparation ground floor infrared emission layer on matrix;
Adopt the preparation of simple metal target medium frequency magnetron sputtering method at matrix surface, the simple metal target is Ti target or Al target, prepares Ti film, Al film or TiAl alloy film with Ar gas as sputter gas, and the infrared emission layer thickness is at 50～250nm;
Step 2: preparation second layer absorbed layer on the ground floor coating;
Adopt metal Ti target and Al target medium frequency magnetron sputtering method, feed Ar, N
2And C
2H
2Mist, the flow of Ar is 100～140sccm, N
2Flow be 30～60sccm, C
2H
2Flow be 5～8sccm, on infrared reflecting layer the preparation the first subgrade TiAlCN+TiAl film, thickness is 50～100nm;
Increase N
2Flow be 40～70sccm, continue the preparation second subgrade TiAlCN+TiAl film, thickness is 50～100nm;
Step 3: the 3rd layer of antireflection layer of preparation on the second layer;
The 3rd layer of antireflection layer is by TiO
2Perhaps Al
2O
3Film constitutes;
When by TiO
2When film constitutes: adopt Ti target intermediate frequency sputtering method, as sputter gas, feed O with Ar gas
2As the reacting gas preparation, regulate Ar and O
2Flow-rate ratio is 1.5: 1～2: 1, and preparation thickness is the TiO of 20～60nm
2Film;
When by Al
2O
3When film constituted: adopt Al target medium frequency magnetron sputtering method, feed inert gas Ar as sputter gas, preparation thickness was the Al of 20～60nm
2O
3Film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101166097A CN101806508B (en) | 2010-02-26 | 2010-02-26 | High temperature solar energy selective absorption coating and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101166097A CN101806508B (en) | 2010-02-26 | 2010-02-26 | High temperature solar energy selective absorption coating and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101806508A true CN101806508A (en) | 2010-08-18 |
| CN101806508B CN101806508B (en) | 2011-07-27 |
Family
ID=42608401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101166097A Expired - Fee Related CN101806508B (en) | 2010-02-26 | 2010-02-26 | High temperature solar energy selective absorption coating and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101806508B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102032696A (en) * | 2011-01-11 | 2011-04-27 | 皇明太阳能股份有限公司 | Anti-overheating film for solar thermal collector |
| CN102102918A (en) * | 2011-02-16 | 2011-06-22 | 北京天瑞星真空技术开发有限公司 | Cr series high-temperature solar selective absorbing coating and preparation method thereof |
| CN102226593A (en) * | 2011-05-07 | 2011-10-26 | 常州龙腾太阳能热电设备有限公司 | Membrane structure of high-temperature oxidation-resistant selective absorption membrane for inner pipe of condensation solar thermal power generation collector pipe |
| CN102277555A (en) * | 2011-08-23 | 2011-12-14 | 北京天瑞星真空技术开发有限公司 | TiN and AlN combined high-temperature solar selectively absorbing coating with double-ceramic structure and preparation method thereof |
| CN102328476A (en) * | 2011-08-23 | 2012-01-25 | 北京天瑞星真空技术开发有限公司 | High-temperature solar energy selective absorption coating comprising TiO2 and Al2O3 double ceramic structures and preparation method thereof |
| CN102328475A (en) * | 2011-08-23 | 2012-01-25 | 北京天瑞星真空技术开发有限公司 | High-temperature solar selective absorption coating with SiO2 and TiO2 bi-ceramic structure and preparation method thereof |
| CN102734966A (en) * | 2012-06-29 | 2012-10-17 | 苏州嘉言能源设备有限公司 | Tank type solar intermediate temperature selective absorption coating |
| CN102734961A (en) * | 2012-06-26 | 2012-10-17 | 四川中科百博太阳能科技有限公司 | Solar medium-temperature and high-temperature selective absorption coating layer |
| CN103032977A (en) * | 2012-12-27 | 2013-04-10 | 北京市太阳能研究所集团有限公司 | Medium-temperature solar energy selective absorbing coating and preparation method thereof |
| CN103302917A (en) * | 2013-05-27 | 2013-09-18 | 欧阳俊 | Dual-absorption-layer TiON weather-resistant photothermal coating and preparation method thereof |
| CN107270564A (en) * | 2016-04-07 | 2017-10-20 | 北京有色金属研究总院 | A kind of sunlight heat absorber coatings |
| CN108645061B (en) * | 2018-03-15 | 2020-07-28 | 兰州交大常州研究院有限公司 | Multilayer composite solar spectrum selective absorption coating and preparation method thereof |
| CN112609158A (en) * | 2020-11-20 | 2021-04-06 | 江苏北方湖光光电有限公司 | Visible infrared window antireflection film based on magnetron sputtering and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070196670A1 (en) * | 2006-02-21 | 2007-08-23 | Harish Chandra Barshilia | solar selective coating having higher thermal stability useful for harnessing solar energy and a process for the preparation thereof |
| CN101250688A (en) * | 2008-03-27 | 2008-08-27 | 江苏亚邦太阳能有限公司 | Solar selectivity absorption coating and manufacture method thereof |
| CN101294749A (en) * | 2007-04-24 | 2008-10-29 | 梁美意 | Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof |
| CN201218622Y (en) * | 2008-04-15 | 2009-04-08 | 北京天瑞星真空技术开发有限公司 | Selective solar energy absorbing coating |
| CN101408354A (en) * | 2008-11-27 | 2009-04-15 | 山东力诺新材料有限公司 | Solar selective absorption coating and preparing method thereof |
-
2010
- 2010-02-26 CN CN2010101166097A patent/CN101806508B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070196670A1 (en) * | 2006-02-21 | 2007-08-23 | Harish Chandra Barshilia | solar selective coating having higher thermal stability useful for harnessing solar energy and a process for the preparation thereof |
| CN101294749A (en) * | 2007-04-24 | 2008-10-29 | 梁美意 | Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof |
| CN101250688A (en) * | 2008-03-27 | 2008-08-27 | 江苏亚邦太阳能有限公司 | Solar selectivity absorption coating and manufacture method thereof |
| CN201218622Y (en) * | 2008-04-15 | 2009-04-08 | 北京天瑞星真空技术开发有限公司 | Selective solar energy absorbing coating |
| CN101408354A (en) * | 2008-11-27 | 2009-04-15 | 山东力诺新材料有限公司 | Solar selective absorption coating and preparing method thereof |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102032696A (en) * | 2011-01-11 | 2011-04-27 | 皇明太阳能股份有限公司 | Anti-overheating film for solar thermal collector |
| CN102032696B (en) * | 2011-01-11 | 2013-06-12 | 皇明太阳能股份有限公司 | Anti-overheating film for solar thermal collector |
| CN102102918B (en) * | 2011-02-16 | 2012-09-05 | 北京天瑞星光热技术有限公司 | Cr series high-temperature solar selective absorbing coating and preparation method thereof |
| CN102102918A (en) * | 2011-02-16 | 2011-06-22 | 北京天瑞星真空技术开发有限公司 | Cr series high-temperature solar selective absorbing coating and preparation method thereof |
| CN102226593A (en) * | 2011-05-07 | 2011-10-26 | 常州龙腾太阳能热电设备有限公司 | Membrane structure of high-temperature oxidation-resistant selective absorption membrane for inner pipe of condensation solar thermal power generation collector pipe |
| CN102328475B (en) * | 2011-08-23 | 2013-12-18 | 北京天瑞星光热技术有限公司 | High-temperature solar selective absorption coating with SiO2 and TiO2 bi-ceramic structure and preparation method thereof |
| CN102328475A (en) * | 2011-08-23 | 2012-01-25 | 北京天瑞星真空技术开发有限公司 | High-temperature solar selective absorption coating with SiO2 and TiO2 bi-ceramic structure and preparation method thereof |
| CN102328476A (en) * | 2011-08-23 | 2012-01-25 | 北京天瑞星真空技术开发有限公司 | High-temperature solar energy selective absorption coating comprising TiO2 and Al2O3 double ceramic structures and preparation method thereof |
| CN102277555A (en) * | 2011-08-23 | 2011-12-14 | 北京天瑞星真空技术开发有限公司 | TiN and AlN combined high-temperature solar selectively absorbing coating with double-ceramic structure and preparation method thereof |
| CN102328476B (en) * | 2011-08-23 | 2014-03-12 | 北京天瑞星光热技术有限公司 | High-temperature solar energy selective absorption coating comprising TiO2 and Al2O3 double ceramic structures and preparation method thereof |
| CN102734961A (en) * | 2012-06-26 | 2012-10-17 | 四川中科百博太阳能科技有限公司 | Solar medium-temperature and high-temperature selective absorption coating layer |
| CN102734966A (en) * | 2012-06-29 | 2012-10-17 | 苏州嘉言能源设备有限公司 | Tank type solar intermediate temperature selective absorption coating |
| CN103032977A (en) * | 2012-12-27 | 2013-04-10 | 北京市太阳能研究所集团有限公司 | Medium-temperature solar energy selective absorbing coating and preparation method thereof |
| CN103302917A (en) * | 2013-05-27 | 2013-09-18 | 欧阳俊 | Dual-absorption-layer TiON weather-resistant photothermal coating and preparation method thereof |
| CN103302917B (en) * | 2013-05-27 | 2015-08-19 | 欧阳俊 | A kind of double absorption layer TiON weatherability photo-thermal coating and preparation method thereof |
| CN107270564A (en) * | 2016-04-07 | 2017-10-20 | 北京有色金属研究总院 | A kind of sunlight heat absorber coatings |
| CN108645061B (en) * | 2018-03-15 | 2020-07-28 | 兰州交大常州研究院有限公司 | Multilayer composite solar spectrum selective absorption coating and preparation method thereof |
| CN112609158A (en) * | 2020-11-20 | 2021-04-06 | 江苏北方湖光光电有限公司 | Visible infrared window antireflection film based on magnetron sputtering and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101806508B (en) | 2011-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102102918B (en) | Cr series high-temperature solar selective absorbing coating and preparation method thereof | |
| CN101806508B (en) | High temperature solar energy selective absorption coating and preparation method thereof | |
| CN100543499C (en) | A kind of solar energy selective absorption coating | |
| CN201218622Y (en) | Selective solar energy absorbing coating | |
| CN101922816B (en) | Solar selective absorbing coating and preparation method thereof | |
| CN102277555A (en) | TiN and AlN combined high-temperature solar selectively absorbing coating with double-ceramic structure and preparation method thereof | |
| EP1759031B1 (en) | Spectrally selective surface coating of the receiver tube of a solar concentrator, and method for the manufacture thereof | |
| CN101737983B (en) | Solar spectrum selective absorbing coating and preparation method thereof | |
| CN101737982B (en) | Solar selectively absorbing coating and preparation method thereof | |
| CN102328476B (en) | High-temperature solar energy selective absorption coating comprising TiO2 and Al2O3 double ceramic structures and preparation method thereof | |
| CN102286720B (en) | High-temperature solar selective absorbing coating with SiO2 and Cr2O3 double-ceramic structure and preparation method thereof | |
| CN104006560B (en) | A kind of WOx/ZrOxHigh temperature solar energy selective absorption coating and preparation method thereof | |
| CN102501459B (en) | Preparation method of medium-and-high-temperature solar selective absorption coating | |
| CN102328475B (en) | High-temperature solar selective absorption coating with SiO2 and TiO2 bi-ceramic structure and preparation method thereof | |
| CN103625032A (en) | Medium-high temperature solar photothermal selective-absorbing coat | |
| CN106884145B (en) | A kind of coating for selective absorption of sunlight spectrum and preparation method thereof | |
| CN103317788A (en) | Spectrum selective absorbing coating and preparation method thereof | |
| CN102108491A (en) | High-temperature solar selective absorbing coating and preparation method thereof | |
| CN102689467A (en) | A high temperature solar power selective absorption coating with a Si3N4 and AlN double ceramic structure and a preparation method thereof | |
| CN201539995U (en) | Titanium nitride metal ceramic thin film mixed with tantalum metal | |
| CN109338297B (en) | Hafnium diboride-zirconium diboride-based high-temperature solar energy absorption coating and preparation method thereof | |
| CN102650474A (en) | High-temperature selective solar energy-absorbing coating with Cr2O3-Al2O3 dual-ceramic structure and preparation method thereof | |
| CN102305484A (en) | Solar collector tube with light trapping structure | |
| CN104596138B (en) | A kind of solar selective absorbing film system | |
| CN103029365A (en) | Medium-high temperature solar selective absorbing coating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING TIANRUIXING VACUUM TECHNOLOGY DEVELOPMENT Free format text: FORMER OWNER: BEIJING KANGTUO SCIENCE +. TECHNOLOGY DEVELOPMENT CORP. Effective date: 20110210 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100190 NO.61, ZHICHUN ROAD, HAIDIAN DISTRICT, BEIJING TO: 100080 NO.16, SOUTH STREET 3, ZHONGGUANCUN, HAIDIAN DISTRICT, BEIJING |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20110210 Address after: 100080 No. 16, South Third Street, Haidian District, Beijing, Zhongguancun Applicant after: Beijing Tianruxing Vacuum Technology Development Co., Ltd. Address before: 100190 No. 61, Haidian District, Beijing, Zhichun Road Applicant before: Beijing Kangtuo Science &. Technology Development Corp. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CANGZHOU TRX SOLAR TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: BEIJING TRX VACUUM TECHNOLOGY DEVELOPMENT CO., LTD. Effective date: 20130312 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100080 HAIDIAN, BEIJING TO: 061000 CANGZHOU, HEBEI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130312 Address after: 061000 Cangzhou city of Hebei Province, the canal zone Yihe estate phase C10-01 Patentee after: Cangzhou TRX Solar Technology Co., Ltd. Address before: 100080 No. 16, South Third Street, Haidian District, Beijing, Zhongguancun Patentee before: Beijing Tianruxing Vacuum Technology Development Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110727 Termination date: 20160226 |