CN101800532A - Micro switch - Google Patents
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- CN101800532A CN101800532A CN 201010118052 CN201010118052A CN101800532A CN 101800532 A CN101800532 A CN 101800532A CN 201010118052 CN201010118052 CN 201010118052 CN 201010118052 A CN201010118052 A CN 201010118052A CN 101800532 A CN101800532 A CN 101800532A
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Abstract
The invention discloses a micro switch, which belongs to the technical field of micro electronic switches. The micro switch comprises a shell and a double-angle inverse switch structure in the shell; a double-angle inner cone, metal balls in the inner cone, a light-controlled light path hole on the wall of the inner cone, a light transmitting-receiving mechanism and a micro switch circuit form a set of complete double-angle inverse switch structure which controls the micro switch in an off state when the inverse angle is less than 20 degrees and in an 'on' state when the inverse angle is more than 50 degrees so as to control stable and reliable inversion. The micro inverse switch is in the key technology of power supply control technology, and is a key component for realizing micro power consumption of a storage test system. The micro switch is a difficult point, a hot point, a conquer point and an innovation point of the technology; and the micro switch has the advantages of micro volume, micro power consumption, high and low temperature resistance, high impact resistance and vibration resistance, acquires expected effect on trial, has good application prospect and is worthy of adoption and popularization.
Description
One. technical field
Microswitch disclosed by the invention belongs to miniature electronic switching technique field, and what be specifically related to is a kind of pulsed drive, photo-electric control, the microswitch of electric control signal in the automatic time delay output when being inverted.
Two. background technology
The storage test is meant not to be had measurand under influence or the condition of influence in allowed band, go into miniature data acquisition and storage tester in that measured body is built-in, on-the-spot quick collection and the memory of finishing information in real time, reclaim this storage tester, by a kind of technique of dynamic measurement of Computer Processing and reproduction detecting information afterwards.
Memory test system is for finishing the physical system that designs of storage test purpose, and it is operated under adverse circumstances such as high temperature, high pressure, thump vibration, high overload and the compact design condition, finishes the real-time collection of information measured automatically and remembers with storage.For example, the memory test system of cannon gun pressure curve and overall trajectory process projectile flight overload messages etc. is tested in storage.
When the application memory measuring technology is carried out on-the-spot test, test macro is installed on the measured body usually, because the residing environment of measured body is abominable, test macro has been proposed strict demand: microbody is long-pending, little power consumption, high reliability, high-low temperature resistant, anti-HI high impact, anti-vibration etc.The long-pending requirement of microbody makes memory test system very harsh to the volume requirement of power supply, will reduce the power consumption of whole test system as much as possible for this reason.For example the formula of the putting into electric voltage detector of Northcentral University's development is when measuring the cannon gun pressure, can protect high temperature (+55 ℃) or low temperature (40 ℃) or normal temperature (+20 ℃) with ammunition and reach 48 hours, heavy caliber ammunition temperature retention time may reach 72 hours, the formula electric voltage detector of putting into must be put into cartridge case before the ammunition insulation, therefore before insulation the electric voltage detector energized, but only keep wait state (electric current is less than 60 μ A), before Live Fire Testing, make electric voltage detector enter full operating state (electric current is less than 6mA) by certain minitype inversion switch, finish the back test macro at cannon chamber pressuring test and change the data hold mode again automatically over to, keep low-power consumption, cut off the power supply at once after the sense data, can realize little power consumption of test macro like this.And the power supply control technology is the key technology of the little power consumption technology of memory test system, and minitype inversion switch is a critical component of realizing the little power consumption of test macro.
At present, multiple miniature powering on (test macro enters full operating state from wait state) control technology has been studied by Northcentral University in storage test practice: as miniature timing upper electrical switch, little power consumption of feasible system, but shortcoming is must finish test within the predetermined time, lack flexibility, and timer itself there is certain power consumption.Once studied other outside cartridge case to the power on method of (entering full operating state) of electric voltage detector from wait state, as ultrasonic method, radioactive ray, but because of ultrasonic and radioactive ray influential to the fail safe of gunpowder, and the power consumption of ultrasonic and radiation detecting circuit greatly, can not meet the demands.Once considered the externally-applied magnetic field signal, but the steel cartridge case has certain shielding action to magnetostatic field, and to put into formula electric voltage detector housing be the high duty metal that can bear the 800MPa high pressure, there be very strong shielding action in magnetic field, so said method is infeasible.In range test, the ammunition of keeping warm mode is not that horizontal positioned is exactly that the bullet point is vertically placed up, therefore consider to adopt minitype inversion switch, the effect of inversion switch is exactly power on (the entering full operating state from wait state) that the formula electric voltage detector is put in control, the electric voltage detector energized is in wait state before insulation, be placed on the cartridge case bottom, the cartridge case of again propellant powder being packed into, electric voltage detector is incubated 48 hours or 72 hours with ammunition.After insulation finishes, before Live Fire Testing 5-10 minute, ammunition press the bullet point down attitude make electric voltage detector enter full operating state automatically by inversion switch more than inversion half a minute from wait state.There is the electronics automatic identification circuit electric voltage detector inside, inversion switch will not power on (entering full operating state from wait state) more than continuously being inverted half a minute, guarantee ammunition in transportation or when slight vibration is arranged electric voltage detector mistake power on (entering full operating state from wait state) can not take place.Once designed miniature mercury inversion switch, but mercury solidifies in the time of-38.9 ℃, the switch conduction impedance is bigger, and effect is undesirable.Consider to use the double-ball type minitype inversion switch, because under the HI high impact situation, gold-plated steel ball surface damage makes contact resistance bigger, effect is also undesirable.Designed the dry-reed inversion switch of miniature built-in afterwards, but find that in actual use this kind switch inversion angle is little, be difficult for resetting, cause that easily the electric voltage detector mistake powers on (entering full operating state from wait state), has reduced the reliability of electric voltage detector.The microswitch of electric control signal on final consideration designs pulsed drive, photo-electric control, automatic time delay is exported when being inverted, this technology has been applied to put into the formula electric voltage detector, successful Application in the cannon chamber pressuring test of certain base national range, achieve the desired result through this switch of practical validation, this product demand has a extensive future at present.
Three. summary of the invention
The objective of the invention is: providing this microswitch to society, for the science and technology and the Defence business of China are done a little work, because this microswitch driving power consumption is little, be inverted control reliably, is the good microswitch of Practical Performance.
Technical scheme of the present invention is as follows: this microswitch is that microbody is long-pending (as the microswitch volume less than 0.5cm
3), little power consumption (power consumption is near 60uA during work), high-low temperature resistant (as high low temperature resistance range-40 ℃～+ 55 ℃), anti-HI high impact (being not less than 15000g), anti-vibration, reliability height as anti-HI high impact, antijamming capability is strong, response speed is fast, in light weight, be suitable for the microswitch that various memory test systems use.This microswitch has three lead-out wires, is respectively ground wire, power line, the time-delay control signal wire that powers on, and these three lead-out wires are connected with memory test system easily.This microswitch includes shell and interior microswitch structure thereof, technical characterstic is: this microswitch is provided with two angle inversion switch structures, the described pair of angle inversion switch structure is by the inner cone of two angles, prill in the inner cone, light-operated light send-receive mechanism and microswitch circuit module are formed, the prill of activity in the inner cone, light-operated light path hole is set on the inner cone body wall, the light path hole site is provided with or is equipped with light-operated light send-receive mechanism and electronic circuit thereof on the inner cone outer wall, form the complete two angle inversion switch mechanism of a cover, when angle＜20 ° are inverted at this microswitch by this pair angle inversion switch mechanism, controlling this microswitch is " pass " state, when this microswitch was inverted angle＞50 °, controlling this microswitch was " opening " state.
According to above-described microswitch, technical characterstic also has: the described light-operated light send-receive mechanism of this microswitch is that a pulse signal is made the photoelectricity coupling circuit that drives and by light-emitting diode, phototriode and current-limiting resistance are formed, light-emitting diode and phototriode light path are installed in light path hole site on the inner cone outer wall with aiming at, the pulse signal output end of the pulse voltage generation circuit of microswitch circuit module connects the positive pole of light-emitting diode, it is the positive pole that the pulse signal output end of the pulse voltage generation circuit of microswitch circuit module connects light-emitting diode, the negative pole series limiting resistor of light-emitting diode, the other end of current-limiting resistance connects the signal ground of pulse signal.It is to be noted: the light-emitting diode that described light-operated light send-receive mechanism adopts pulse signal to drive the photoelectricity coupling circuit is invention characteristics of the present invention, makes that the driving power consumption of this microswitch is small to be the essence of this technical characterstic and to pursue one's goal.Again for example, described photoelectricity coupling circuit is made up of infrarede emitting diode, phototriode and current-limiting resistance.Infrarede emitting diode is electrical signal conversion an infrared signal as reflector, and phototriode receives infrared signal and again infrared signal is converted to the signal of telecommunication as receiver.Improved the antijamming capability of microswitch for the media transmission signal with light.The infrared light emission is adopted direct-injection type with the mode that receives, infrarede emitting diode is aimed at the relative light path hole site that is installed on the inner cone outer wall with the phototriode light path, be chosen as 2mm apart as the centre, infrarede emitting diode is connected with circuit module by lead with phototriode again.Infrarede emitting diode is selected for use is that the model of EVERLIGHT company is PT19-21C/TR8, and phototriode is selected for use is that the model of the EVERLIGHT company that uses with the PT19-21C pairing is IR19-21C/TR8.The chip data of PT19-21C/TR8 and IR19-21C/TR8 can be downloaded in the official website of EVERLIGHT company.
According to above-described microswitch, technical characterstic also has: the detailed structure of two angle invert mechanisms of described this microswitch is: the structure of the inner cone of described pair of angle of this microswitch be inner bottom be cylindrical cavity, connection and transition for its do above cylindrical cavity 100 ° of conical cavity of tapering at the end, again connect and transition for its 100 ° make 40 ° of conical cavity of tapering at the end above the conical cavity, connection and transition are 40 ° of ducted bodies of making the cylindrical cavity at the end above the conical cavity again.It should be appreciated that: two angle invert mechanisms that this microswitch adopts are again another invention characteristics of the present invention, and its advantage and meaning are narrated hereinafter.For example the example design parameter of two angle invert mechanisms enforcements is selected as follows: the diameter that the prill of this example design is selected is 1.5mm, in this way the bead of stainless steel material.According to the prill diameter 1.5mm of this example design, the structure of the inner cone of described pair of angle: the diameter of the cylindrical cavity of its bottom is 2.3～4mm, high 0.8～2.1mm; The base diameter of 100 ° of conical cavity is that 2.3～4mm, top diameter are 1.6～2.3mm, high 0.2～0.95mm; The base diameter of 40 ° of conical cavity is that 1.6～2.3mm, top diameter are 0.3～1mm, high 0.8～2.1mm; The diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.3～1mm, height are 0～0.2mm.If select different prill diameters, should select the size and the structure of the different two angle inner cones of design according to the different-diameter of prill.When this microswitch is in difference inversion angle, the moving position of control prill in this pair angle inner cone, the moving position of prill control light path on-off is promptly by light-operated light send-receive mechanism and its microswitch circuit module output signal of electronic circuit control thereof and to control this microswitch be " pass " or " opening " state; If during with this microswitch central axis level is 0 ° of datum line, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turn clockwise and the anglec of rotation be 0 °～20 ° or the anglec of rotation when being 160 °～360 ° this microswitch be " pass " state; When the microswitch anglec of rotation was 50 °～130 °, this microswitch was " opening " state; In other anglec of rotation, promptly when this microswitch turn clockwise and the anglec of rotation be 20 °～50 ° or the anglec of rotation when being 130 °～160 ° this microswitch be in or the inversion critical condition of " pass " state or " opening " state.
According to above-described microswitch, technical characterstic also has: described this microswitch circuit module comprises the photoelectricity coupling circuit, is subjected to electric control signal generation circuit, clock circuit, electric power management circuit on the pulse voltage generation circuit, time-delay of photoelectricity coupling circuit control.The clock circuit of the circuit module of this microswitch provides clock signal for CPLD, and for example adopting Epson Toyocom company model is the crystal oscillator of SG3030LC, and output frequency is 32768Hz.The model of electric power management circuit employing MAXIM company is the integrated circuit (IC) chip of MAX6138 for another example, export 1.8 volts of voltages, give CPLD i spMACH 4032ZE power supply, the power supply of MAX6138 integrated circuit (IC) chip and crystal oscillator SG3030LC is provided by the memory test system that is connected with microswitch.The chip data of SG3030LC can be downloaded in the official website of Epson Toyocom company, and the chip data of MAX6138 can be downloaded in the official website of MAXIM company.This microswitch circuit module schematic diagram can be referring to Figure of description 3, in Fig. 3: U1 is CPLD ispMACH 4032ZE, and U2 is crystal oscillator SG3030LC, and U3 is power management integrated circuit chip MAX6138.
According to above-described microswitch, technical characterstic also has: this microswitch is if be 0 ° of datum line during with this microswitch central axis level, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turns clockwise and the anglec of rotation when being 20 °～160 °, if prill cuts off light path because of action of gravity activity to the place, light path hole that inner cone is provided with, the emitter output zero level of phototriode, the control time-delay is gone up electric control signal generation circuit and is picked up counting, continuously timing full after 16 seconds time-delay go up the output of electric control signal generation circuit and uprise level, this microswitch enters " opening " state from " pass " state.Can not continue more than 16 seconds if prill cuts off light path, electric control signal generation circuit automatically resets and exports zero level time-delay in, and it is " pass " state that this microswitch is controlled in continuation.In more detail: if be 0 ° of datum line during with this microswitch central axis level, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turns clockwise and the anglec of rotation is 0 °～20 °, when perhaps the anglec of rotation is 160 °～360 °, promptly guarantee that prill does not enter the i.e. 40 ° of pyramid zones of second cone angle in 100 ° of angles with first cone angle in the inner cone, prill can be unmovable to the light path hole site, prill can not be in the light, infrared conducting light paths, the emitter output pulse signal of phototriode, this pulse signal is identical with the pulse voltage signal frequency of driven for emitting lights diode, duty ratio is identical, it is zero that the electric control signal output level is gone up in time-delay this moment, and microswitch is " pass " state.When the microswitch anglec of rotation is 50 °～130 °, guarantee that with second cone angle prill activity is to the light path hole site, prill can cut off infrared light path, the emitter of phototriode is output as zero level, electric control signal generation circuit picks up counting in the time-delay, the electric control signal output level became high level on timing was completely delayed time after 16 seconds continuously, and microswitch becomes " opening " state.This microswitch only is in the just infrared light path in light path hole site at prill and is cut off this state continuance and just can produces electric control signal in the time-delay more than 16 seconds, otherwise electric control signal generation circuit automatically resets in the time-delay, electric control signal output zero level in the time-delay, microswitch still is " pass " state.In other anglec of rotation, promptly turn clockwise and the anglec of rotation is 20 °～50 ° when microswitch, when perhaps the anglec of rotation is 130 °～160 °, this microswitch is in or the inversion critical condition of " pass " state or " opening " state, because first cone angle, the angle of the geometric angle of second cone angle and the gravity direction of bead and the influence of outside presumable vibration, make prill play pendulum, this moment, prill may be in the first cone angle cone zone, also may be in the second cone angle cone zone, microswitch is in or the inversion critical condition of " opening " state or " pass " state.Therefore, be applied to avoid when memory test system uses these two kinds of angular ranges (microswitch turns clockwise and the anglec of rotation is that 20 °～50 ° or the anglec of rotation are 130 °～160 °) when microswitch.
According to above-described microswitch, technical characterstic also has: electric control signal generation circuit is that the master constitutes by programmable logic device in the pulse voltage generation circuit of this microswitch, the time-delay, the pulse signal output end of the pulse voltage generation circuit of microswitch circuit module connects the positive pole of light-emitting diode, it is the positive pole of the pulse signal output end connection light-emitting diode of pulse voltage generation circuit, the negative pole series limiting resistor of light-emitting diode, the other end of current-limiting resistance connects the signal ground of pulse signal.Electric control signal is controlled " opening " or " pass " state of this microswitch in the time-delay that electric control signal generation circuit produces in the time-delay.For example, what the CPLD of this microswitch was selected for use is that the model that Lay DIS produces is ispMACH4032ZE, CPLD is the integrated circuit (IC) chip that is realized required function by user program, can programme repeatedly, wipe.The supporting cable that develops software and programme that utilizes Lay DIS to provide is realized the programming of CPLD model for ispMACH 4032ZE, ispMACH 4032ZE is the low energy-consumption electronic device of 1.8 volts of power supplies, adopt BGA Package, the version that develops software that the Lay DIS that uses provides is Lattice Semiconductor ispLEVER Classic 1.2, after in developing software, finishing design, software produces a final programming file automatically, the programming cable that provides by the Lay DIS file of will programming burns among the ispMACH 4032ZE again, and the programming process is exactly the programming process of CPLD.The internal logic circuit figure of this CPLD ispMACH 4032ZE can be referring to Figure of description 4, in Fig. 4: U4～U8 is the integrated circuit (IC) chip that Hardware Description Language VHDL (Very High speedIntegrated Circuit Hardware Description Language) is write.Hardware description language is the main flow design language of at present domestic and international digital system, is mainly used in structure, behavior, function and the interface etc. of describing digital system.The chip data of ispMACH 4032ZE can be downloaded in the official website of Lay DIS.Pulse voltage generation circuit produces the pulse voltage that drives infrarede emitting diode, the frequency of pulse voltage is 4 hertz, duty ratio is 1: 2047, utilize the pulse voltage type of drive can reduce the average current of infrarede emitting diode, allow that bigger peak current flows through, increase the infrared light intensity of infrarede emitting diode emission, reduce the power consumption of microswitch.Electric control signal generation circuit produces time-delay and goes up electric control signal and give memory test system in the time-delay, and the level that utilizes time-delay to go up electric control signal changes and comes the control store test macro to enter full operating state from wait state.
According to above-described microswitch, technical characterstic also has: the pulse voltage generation circuit of this microswitch is by 12 the binary system asynchronous counters and the hardware description language program thereof of the internal logic circuit of CPLD, 7 binary system asynchronous counters and hardware description language program thereof, d type flip flop and hardware description language program thereof, not gate constitutes, for example by 12 the binary system asynchronous counter U4 and the hardware description language program thereof of the internal logic circuit of CPLD, 7 binary system asynchronous counter U5 and hardware description language program thereof, d type flip flop U7 and hardware description language program thereof, not gate U9 constitutes.
According to above-described microswitch, technical characterstic also has: electric control signal generation circuit is by 12 the binary system asynchronous counters and the hardware description language program thereof of the internal logic circuit of CPLD in the time-delay of this microswitch, 7 binary system asynchronous counters and hardware description language program thereof, d type flip flop and hardware description language program thereof, constitute with door, for example by 12 the binary system asynchronous counter U4 and the hardware description language program thereof of the internal logic circuit of CPLD, 7 binary system asynchronous counter U5～U6 and hardware description language program thereof, d type flip flop U8 and hardware description language program thereof, constitute with door U10.。
According to above-described microswitch, technical characterstic also has: the padded coaming that is filled with shock resistance and anti-vibration between the shell of this microswitch and interior microswitch structure thereof.The prill of this microswitch is enclosed in the inner cone with upper cover plate and lower cover, circuit module, inner cone encapsulate in the enclosure together, and be filled with the padded coaming of shock resistance and anti-vibration between circuit module, inner cone and the shell, improve the ability of the shock resistance and the anti-vibration of this microswitch, anti-HI high impact ability is not less than 15000g.The padded coaming of described shock resistance and anti-vibration can be selected the padded coaming of the shock resistance and the anti-vibration of public commercial goods, all can use as long as this material can be finished shock resistance and anti-vibration material its function, that be suitable for.
The advantage of microswitch of the present invention has: 1. this microswitch is the key technology of power supply control technology, also is the critical component of realizing the little power consumption of memory test system, therefore microswitch of the present invention be above-mentioned technology difficult point, focus, capture a little and innovative point.2. the light-emitting diode of this microswitch employing pulse signal driving photoelectricity coupling circuit is another invention characteristics, makes the driving power consumption of this microswitch realize little power consumptionization.3. two angle invert mechanisms of adopting of this microswitch are another invention characteristics, and the control on off state was stable, reliably when this microswitch was inverted, and are used for scientific research, military significance is self-evident.4. this microswitch high low temperature resistance range can satisfy the demand of memory test system to high-low temperature resistant at-40 ℃～+ 55 ℃.5. all components and parts of circuit module are all selected the microminiature encapsulation for use in this microswitch, and board design adopts polylaminate wiring technique, and the volume of circuit board can be less than 0.09cm
3, the volume of microswitch can be less than 0.5cm
36. this microswitch technology has been applied to put into the formula electric voltage detector, and successful Application in the cannon chamber pressuring test of certain base national range achieves the desired result through this switch of practical validation, at present the promise well promoted on a large scale of this product.This microbody of the present invention is long-pending, the microswitch of little power consumption, high-low temperature resistant, anti-HI high impact, anti-vibration etc. is worth adopting and promoting.
Four. description of drawings
Figure of description of the present invention has 5 width of cloth:
Fig. 1 is this microswitch structure orthogonal view;
Fig. 2 is this microswitch location status schematic diagram, and wherein: a figure is that microswitch, the b figure of 20 ° of the anglecs of rotation is that microswitch, the c figure of 50 ° of the anglecs of rotation is that microswitch, the d of 90 ° of the anglecs of rotation is that microswitch, the e figure of 130 ° of the anglecs of rotation is that microswitch, the f figure of 160 ° of the anglecs of rotation is that microswitch, the g figure of 230 ° of the anglecs of rotation is that microswitch, the h figure of 270 ° of the anglecs of rotation is the microswitch of 310 ° of the anglecs of rotation;
Fig. 3 is a microswitch circuit module schematic diagram;
Fig. 4 is the internal logic circuit figure of programmable logic device ispMACH 4032ZE;
Fig. 5 is putting into the application schematic diagram of formula electric voltage detector for microswitch, wherein: a figure and b figure be ammunition when being incubated, put into the placement schematic diagram of formula electric voltage detector and microswitch, and c figure is ammunition, put into the inversion schematic diagram of formula electric voltage detector and microswitch.
Adopted unified label in each figure, promptly same object is used same label in each figure.In each figure: 1. circuit module; 2. shell; 3. upper cover plate; 4. infrarede emitting diode; 5. phototriode; 6. inner cone; 7. prill; 8. lower cover; 9. first cone angle; 10. second cone angle; 11. light path hole; 12. lead-out wire; 13. bullet; 14. cartridge case; 15. put into the formula electric voltage detector; 16. microswitch; R1～R3. is resistance; C1～C3. is electric capacity; U1, U2, U3. are integrated circuit (IC) chip, and U1 is ispMACH 4032ZE for the CPLD model, and U2 is SG3030LC for the crystal oscillator model, and U3 is MAX6138 for the power management chip model; D1 is an infrarede emitting diode; Q1 is a phototriode; U4～U10 is the logic circuit chip of CPLD inside, and U4 is 12 binary system asynchronous counters, and U5～U6 is 7 binary system asynchronous counters, and U7～U8 is a d type flip flop, and U9 is a not gate, and U10 is and door.
Five. specific embodiments
Microswitch non-limiting examples of the present invention is as follows:
Embodiment one. microswitch
This routine microswitch includes shell and interior microswitch structure thereof, this routine microswitch concrete structure is shown among Fig. 1, and 1 is circuit module, the 2nd in Fig. 1, shell, the 3rd, and upper cover plate, the 4th, infrarede emitting diode, the 5th, phototriode, the 6th, inner cone, the 7th, prill, the 8th, lower cover, 9 are that first cone angle, 10 is second cone angles, the 11st, light path hole, the 12nd, lead-out wire.These three lead-out wires are respectively ground wire, power line, the time-delay control signal wires that powers on, and these three lead-out wires can make things convenient for memory test system and are connected.Be filled with the padded coaming of shock resistance and anti-vibration between the shell 2 of this example microswitch and interior microswitch structure thereof.The prill 7 usefulness upper cover plates 3 and the lower cover 8 of this example microswitch are enclosed in the inner cone 6, circuit module 1, inner cone 6 etc. encapsulate in the enclosure together, also between circuit module 1, inner cone 6 and shell 2, be filled with the padded coaming of anti-impact city and anti-vibration, improve the ability of the shock resistance and the anti-vibration of this microswitch, anti-HI high impact ability is not less than 15000g.The padded coaming of described shock resistance and anti-vibration can be selected the padded coaming of the shock resistance and the anti-vibration of public commercial goods, all can use as long as this material can be finished shock resistance and anti-vibration material its function, that be suitable for.Technical characterstic is: this microswitch is provided with two angle inversion switch structures, this pair angle inversion switch structure is made up of the inner cone 6 of two angles, the prill 7 in the inner cone 6, light-operated light send-receive mechanism and microswitch circuit module 1 etc., on movable prill 7, inner cone 6 walls light-operated light send-receive mechanism and the electronic circuit thereof that the light path hole site is provided with or installs on light-operated light path hole 11, the inner cone outer wall is set in the inner cone 6, forms the complete two angle inversion switch mechanism of a cover.When angle＜20 ° were inverted at this microswitch by this pair angle inversion switch mechanism, controlling this microswitch be " pass " state, and during in these microswitch inversion angle＞50 °, controlling this microswitch is " opening " state.This routine microswitch circuit module 1 comprises the photoelectricity coupling circuit, is subjected to electric control signal generation circuit, clock circuit, electric power management circuit on the pulse voltage generation circuit, time-delay of photoelectricity coupling circuit control.The clock circuit of circuit module 1 provides clock signal for CPLD, and it is the crystal oscillator of SG3030LC that this example adopts Epson Toyocom company model, and output frequency is 32768Hz.It is the integrated circuit (IC) chip of MAX6138 that electric power management circuit adopts the model of MAXIM company, export 1.8 volts of voltages, give CPLD ispMACH 4032ZE power supply, the power supply of MAX6138 integrated circuit (IC) chip and crystal oscillator SG3030LC is provided by the memory test system that is connected with microswitch.This circuit module schematic diagram can be referring to Figure of description 3, in Fig. 3: U1 is CPLD ispMACH 4032ZE, U2 is crystal oscillator SG3030LC, U3 is power management chip MAX6138, capacitor C 1 and capacitor C 2 are the electric capacity that strobes, capacitor C 3 is formed the power-on reset signal that electrify restoration circuit produces CPLD with resistance R 3, and infrarede emitting diode D1, phototriode Q1, resistance R 1, R2 form the photoelectricity coupling circuit.The electronic circuit of light-operated light send-receive mechanism is the photoelectricity coupling circuit that a pulse signal is done driving, this circuit is by infrarede emitting diode 4 (being the D1 of Fig. 3), compositions such as phototriode 5 (being the Q1 of Fig. 3) and current-limiting resistance R1, infrarede emitting diode 4 (D1) and phototriode 5 (Q1) light path are installed in the position in light path hole 11 on inner cone 6 outer walls with aiming at, the pulse signal output end of the pulse voltage generation circuit of microswitch circuit module connects the positive pole of light-emitting diode, promptly the pulse signal output end of the pulse voltage generation circuit of the circuit module 1 of this microswitch connects the positive pole of infrarede emitting diode 4 (D1), the negative pole series limiting resistor R1 of infrarede emitting diode 4 (D1), the other end of current-limiting resistance R1 connects the signal ground of pulse signal.It is to be noted: the light-emitting diode that light-operated light send-receive mechanism adopts pulse signal to drive the photoelectricity coupling circuit is invention characteristics of the present invention, and this makes this microswitch is little power consumption.For another example, improved the antijamming capability of microswitch for the media transmission signal with light.The outer wall of the inner cone 6 of this microswitch is provided with light path hole 11, the infrared light emission is adopted direct-injection type with the mode that receives, infrarede emitting diode 4 is aimed at the relative light path hole site that is installed on inner cone 6 outer walls with phototriode 5 light paths, middle at a distance of being 2mm, infrarede emitting diode is connected with circuit module by lead with phototriode again.Infrarede emitting diode is selected for use is that the model of EVERLIGHT company is PT19-21C/TR8, and phototriode is selected for use is that the model of the EVERLIGHT company that uses with the PT19-21C pairing is IR19-21C/TR8.In Fig. 3: CLRIN is the power-on reset signal of CPLD, signal CLK is a clock signal, frequency is 32768Hz, signal IR is a pulse voltage signal, pulse voltage generation circuit by CPLD inside produces, signal ID is the emitter output of phototriode, signal PON is that electric control signal is gone up in time-delay, signal VCC is that 1.8V is the power supply signal of CPLD, signal VCC is the power supply signal of integrated circuit (IC) chip MAX6138 and crystal oscillator SG3030LC, signal VCC is provided by the memory test system that is connected with microswitch, TMS, TDI, TDO, TCK is the programming pin of CPLD, is connected with the programming cable.The programmable logic device ispMACH 4032ZE of this example microswitch is the main electric control signal generation circuit in pulse voltage generation circuit, the time-delay that constitutes.The pulse signal output end of pulse voltage generation circuit connects the positive pole of light-emitting diode, the negative pole series limiting resistor of light-emitting diode, the other end of current-limiting resistance connects the signal ground of pulse signal, and electric control signal is controlled " opening " or " pass " state of this microswitch in the time-delay that electric control signal generation circuit produces in the time-delay.What the CPLD of this example microswitch was selected for use is that the model that Lay DIS produces is ispMACH 4032ZE, and CPLD is the integrated circuit (IC) chip that is realized required function by user program, can programme repeatedly, wipe.The supporting cable that develops software and programme that utilizes Lay DIS to provide is realized the programming of CPLD model for ispMACH 4032ZE, ispMACH 4032ZE is the low energy-consumption electronic device of 1.8 volts of power supplies, adopt BGA Package, the version that develops software that the Lay DIS that uses provides is Lattice Semiconductor ispLEVER Classic 1.2, after in developing software, finishing design, software produces a final programming file automatically, the programming cable that provides by the Lay DIS file of will programming burns among the ispMACH 4032ZE again, and the programming process is exactly the programming process of CPLD.The internal logic circuit figure of this CPLD ispMACH 4032ZE can be referring to Figure of description 4, in Fig. 4: U4 is 12 binary system asynchronous counters, and U5～U6 is 7 binary system asynchronous counters, and U7～U8 is a d type flip flop, U9 is a not gate, and U10 is 2 inputs and door.Input signal CLK is a clock signal, and frequency is 32768Hz, and the cycle is about 30.5 microseconds.Input signal CLRIN is the power-on reset signal of d type flip flop U8, and input signal ID is the emitter output of phototriode, and output signal IR is a pulse voltage, is the drive signal of infrarede emitting diode, and output signal PON goes up electric control signal for time-delay.U4～U8 is the integrated circuit (IC) chip that Hardware Description Language VHDL (Very High speed Integrated Circuit HardwareDescription Language) is write, and the concrete details of hardware description language sees also present embodiment one decline.Hardware description language is the main flow design language of at present domestic and international digital system, is mainly used in structure, behavior, function and the interface etc. of describing digital system.Pulse voltage generation circuit is made of 12 binary system asynchronous counter U4 of the internal logic circuit of CPLD and hardware description language program thereof, 7 binary system asynchronous counter U5 and hardware description language program, d type flip flop U7 and hardware description language program thereof, not gate U9.Pulse voltage generation circuit produces the pulse voltage that drives infrarede emitting diode 4, the frequency of pulse voltage is 4 hertz, duty ratio is 1: 2047, utilize the pulse voltage type of drive can reduce the average current of infrarede emitting diode, allow that bigger peak current flows through, increase the infrared light intensity of infrarede emitting diode emission, reduce the power consumption of microswitch.Electric control signal generation circuit is by 12 binary system asynchronous counter U4 of the internal logic circuit of CPLD and hardware description language program thereof, 7 binary system asynchronous counter U5～U6 and hardware description language program, d type flip flop U8 and hardware description language programs thereof, constitute with a door U10 in the time-delay.Electric control signal generation circuit produces time-delay and goes up electric control signal and give memory test system in the time-delay, and the level that utilizes time-delay to go up electric control signal changes to be controlled test macro and enter full operating state from wait state.The detailed structure of two angle inner cones of the microswitch that this is routine is: to be cylindrical cavity, connection and transition make 100 ° of conical cavity of tapering at the end, connect and transition is made 40 ° of conical cavity of tapering at the end, connected and transition is 40 ° of ducted bodies of making the cylindrical cavity at the end above the conical cavity again for its 100 ° above the conical cavity again for it above the cylindrical cavity in inner bottom.The structural parameters of two angle inner cones 6 of this example are selected as follows: the diameter of the cylindrical cavity of its bottom is 3mm, high 1.5mm, the base diameter of 100 ° of conical cavity is that 3mm, top diameter are 2mm, high 0.4mm, the base diameter of 40 ° of conical cavity is that 2mm, top diameter are 0.8mm, high 1.6mm, is that 0.8mm, height are 0.2mm with 40 ° of diameters of making the cylindrical cavity at the end above the conical cavity.Two angle invert mechanisms that this routine microswitch adopts are another invention characteristics of the present invention, and the control on off state was stable, reliable when this was inverted this microswitch, and its advantage is to be applicable to causes such as scientific research, military affairs, national defence, and is significant.The diameter that this routine prill 7 is selected is 1.5mm, in this way the bead done of stainless steel material.When this microswitch is in different inversion angles, the moving position of control prill in this pair angle inner cone, the moving position of prill control light path on-off is promptly by light-operated light send-receive mechanism and its microswitch circuit module output signal of electronic circuit control thereof and to control this microswitch be " pass " or " opening " state.Each figure of a～h of Fig. 2 unites this example microswitch different rotation angle and inversion state schematic diagram is shown, and is convenient to reference and explanation.Fig. 5 then illustrates this microswitch 16 and is putting into the application schematic diagram that formula electric voltage detector 15 is used for cannon chamber pressuring test, ammunition horizontal positioned or bullet point are vertically placed up during insulation, shown in a figure and b figure of Fig. 5, electric control signal output zero level in the time-delay of microswitch; After insulation finishes, before ball firing 5-10 minute ammunition press the bullet point down attitude be inverted, shown in the c figure of Fig. 5, microswitch enters reliable inversion state, electric control signal output high level in the time-delay of microswitch after under this state 16 seconds, control is put into the formula electric voltage detector and is entered full operating state from wait state.Microswitch is not inverted more than 16 seconds continuously, electric control signal just can not exported high level in the time-delay, put into the formula electric voltage detector and just can not enter full operating state, guarantee that like this ammunition puts into the formula electric voltage detector mistake power on (entering full operating state from wait state) can not take place in transportation or when slight vibration is arranged from wait state.The formula electric voltage detector of putting into is battery-powered, and battery capacity is limited, powers on if when insulation, mistake took place, and battery capacity can run out, and just can't test data during ball firing, has reduced the reliability of putting into the formula electric voltage detector.If during with this microswitch central axis level is 0 ° of datum line, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turn clockwise and the anglec of rotation be 0 °～20 ° or the anglec of rotation when being 160 °～360 ° this microswitch be " pass " state.When the microswitch anglec of rotation was 50 °～130 °, this microswitch was " opening " state.In other anglec of rotation, promptly when this microswitch turn clockwise and the anglec of rotation be 20 °～50 ° or the anglec of rotation when being 130 °～160 ° this microswitch be in or the inversion critical condition of " pass " state or " opening " state.In more detail: this microswitch is if be 0 ° of datum line during with this microswitch central axis level, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turns clockwise and the anglec of rotation when being 20 °～160 °, if prill 7 cuts off light path because of action of gravity activity to 11 places, light path hole that inner cone 6 is provided with, the emitter output zero level of phototriode 5, the control time-delay is gone up electric control signal generation circuit and is picked up counting, continuously timing full after 16 seconds time-delay go up the output of electric control signal generation circuit and uprise level, this microswitch enters " opening " state from " pass " state.Can not continue more than 16 seconds if prill cuts off light path, electric control signal generation circuit automatically resets and exports zero level time-delay in, and it is " pass " state that this microswitch is controlled in continuation.If during with this microswitch central axis level is 0 ° of datum line, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turns clockwise and the anglec of rotation is 0 °～20 °, when perhaps the anglec of rotation is 160 °～360 °, promptly guarantee that prill 7 does not enter the i.e. 40 ° of pyramid zones of second cone angle in 100 ° of angles with first cone angle in the inner cone 6, prill 7 can be unmovable to 11 positions, light path hole, prill 7 can not be in the light, infrared conducting light paths, the emitter output pulse signal of phototriode 5, this pulse signal is identical with the pulse voltage signal frequency of driven for emitting lights diode, duty ratio is identical, it is zero that the electric control signal output level is gone up in time-delay this moment, and microswitch is " pass " state.When the microswitch anglec of rotation is 50 °～130 °, guarantee that with second cone angle prill 7 activities are to 11 positions, light path hole, prill 7 can cut off infrared light path, the emitter of phototriode 5 is output as zero level, electric control signal generation circuit picks up counting in the time-delay, the electric control signal output level became high level on timing was completely delayed time after 16 seconds continuously, and microswitch becomes " opening " state.This microswitch only is in the just infrared light path in 11 positions, light path hole at prill 7 and is cut off this state continuance and just can produces electric control signal in the time-delay more than 16 seconds, otherwise electric control signal generation circuit automatically resets in the time-delay, electric control signal output zero level in the time-delay, microswitch still is " pass " state.In other anglec of rotation, promptly turn clockwise and the anglec of rotation is 20 °～50 ° when microswitch, when perhaps the anglec of rotation is 130 °～160 °, this microswitch is in or the inversion critical condition of " pass " state or " opening " state, because first cone angle, the angle of the gravity direction of the geometric angle of second cone angle and prill 7 and the influence of outside presumable vibration, make prill 7 play pendulum, this moment, prill 7 may be in the first cone angle cone zone, also may be in the second cone angle cone zone, microswitch is in or the inversion critical condition of " opening " state or " pass " state.Therefore, be applied to avoid when memory test system uses these two kinds of angular ranges (microswitch turns clockwise and the anglec of rotation is that 20 °～50 ° or the anglec of rotation are 130 °～160 °) when microswitch.This routine microswitch is that microbody is long-pending (as the microswitch volume less than 0.5cm
3), little power consumption (power consumption is near 60uA during work), high-low temperature resistant (as high low temperature resistance range-40 ℃～+ 55 ℃), anti-HI high impact (being not less than 15000g), anti-vibration, reliability height as anti-HI high impact, antijamming capability is strong, response speed is fast, in light weight, be suitable for the microswitch that various memory test systems use.
The hardware description language program listing of 12 binary system asynchronous counter U4 is as follows:
Library IEEE;--open the IEEE storehouse
Use IEEE.STD_LOGIC_1164.ALL;--call the STD_LOGIC_1164 program package
Use IEEE.STD_LOGIC_ARITH.ALL;--call the IEEE.STD_LOGIC_ARITH program package
Use IEEE.STD_LOGIC_UNSIGNED.ALL;--call the STD_LOGIC_UNSIGNED program package
Entity counter12 is--port explanation, clk, clr are input pins, P, Q are output pins
Port(clk:in?std_logic；
clr:in?std_logic；
P:OUT?std_logic；
Q:OUT?std_logic)；
end?counter12；
Architecture Behavioral of counter12 is--the function of counter is described
signal?count:STD_LOGIC_vector(11?downto?0):＝″000000000000″；
begin
process(clk，clr)
begin
if?clr＝′1′then
count＜＝″000000000000″；
elsif?clk′event?and?clk＝′0′then
count＜＝count+′1′；
end?if；
end?process；
P＜＝count(2)；
Q＜＝count(11)；
end?Behavioral；
The hardware description language program listing of 7 binary system asynchronous counter U5 and U6 is as follows:
Library IEEE;--open the IEEE storehouse
Use IEEE.STD_LOGIC_1164.ALL;---call STD_LOGIC_1164 program package
Use IEEE.STD_LOGIC_ARITH.ALL;--call the IEEE.STD_LOGIC_ARITH program package
Use IEEE.STD_LOGIC_UNSIGNED.ALL;--call the STD_LOGIC_UNSIGNED program package
Entity counter7 is--port explanation, clk, clr are input pins, M, N, Q are output pins
Port(clk:in?std_logic；
clr:in?std_logic；
M，N，Q:OUT std_logic)；
end?counter7；
Architecture Behavioral of counter7 is--the function of counter is described
signal?count:STD_LOGIC_vector(6?downto?0):＝″0000000″；
begin
process(clk，clr)
begin
if?clr＝′1′then
count＜＝″0000000″；
elsif?clk′event?and?clk＝′0′then
count＜＝count+′1′；
end?if；
end?process；
M＜＝count(0)；
N＜＝count(1)；
Q＜＝count(5)；
end?Behavioral；
The hardware description language program listing of d type flip flop U7 and U8 is as follows:
Library IEEE;--open the IEEE storehouse
Use IEEE.STD_LOGIC_1164.ALL;---call STD_LOGIC_1164 program package
Use IEEE.STD_LOGIC_ARITH.ALL;--call the IEEE.STD_LOGIC_ARITH program package
Use IEEE.STD_LOGIC_UNSIGNED.ALL;--call the STD_LOGIC_UNSIGNED program package
Entity FDCP_N is--port explanation, D, CLK, PREN, CLRN are input pins, Q is an output pin
PORT(D，CLK，PREN，CLRN:IN?STD_LOGIC；
Q:OUT?STD_LOGIC)；
end?FDCP_N；
Architecture Behavioral of FDCP_N is--the function of d type flip flop is described
begin
PROCESS(CLK，PREN，CLRN)
BEGIN
IF?PREN＝′0′THEN
Q＜＝′1′；
ELSIF?CLRN＝′0′THEN
Q＜＝′0′；
ELSIF?CLK′EVENT?AND?CLK＝′1′THEN
Q＜＝D；
END?IF；
END?PROCESS；
end?Behavioral；
Embodiment two. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of microswitch that this is routine and embodiment one has: 1. the structural parameters of two angle inner cones 6 of microswitch that should example are selected as follows: the diameter of the cylindrical cavity of its bottom is 3.7mm, high 1.2mm, the base diameter of 100 ° of conical cavity is that 3.7mm, top diameter are 2mm, high 0.7mm, the base diameter of 40 ° of conical cavity is that 2mm, top diameter are 0.8mm, high 1.6mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.8mm, height are 0.1mm.2. selected in should example be CPLD ispMACH4032ZE as Fig. 3, neither be hardware description language is programmed, internal integrated circuit U4～U8 among the CPLD ispMACH 4032ZE as Fig. 4, but adopt other circuit of public commercial goods or integrated circuit block to constitute, as long as all can using of its circuit function that substitutes can be finished or satisfy to these integrated circuit blocks that substitute.All the other do not state this routine microswitch, are same as entirely described in the embodiment one, no longer repeat.
Embodiment three. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of microswitch that this is routine and embodiment one, embodiment two has: 1. the structural parameters of two angle inner cones 6 of microswitch that should example are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 1.5mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 1.6mm, high 0.95mm, the base diameter of 40 ° of conical cavity is that 1.6mm, top diameter are 0.5mm, high 1.6mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.5mm, height are 0mm.2. selected in should example be model, the electronic devices and components of specification, integrated circuit block described in Fig. 3 and Fig. 4, but substituting, other components and parts, the circuit integrated circuit block that adopt public commercial goods constitute, as long as all can using of its circuit function that substitutes can be finished or satisfy to these components and parts, integrated circuit blocks that substitute.All the other do not state this routine microswitch, are same as entirely described in embodiment one, the embodiment two, no longer repeat.
Embodiment four. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment three has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 0.8mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 2.3mm, high 0.7mm, the base diameter of 40 ° of conical cavity is that 2.3mm, top diameter are 1mm, high 1.8mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 1mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment three, no longer repeat.
Embodiment five. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment four has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 0.8mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 2.3mm, high 0.7mm, the base diameter of 40 ° of conical cavity is that 2.3mm, top diameter are 0.8mm, high 2.1mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.8mm, height are 0.15mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment four, no longer repeat.
Embodiment six. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment five has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 0.8mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 2.3mm, high 0.7mm, the base diameter of 40 ° of conical cavity is that 2.3mm, top diameter are 0.7mm, high 2.3mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.7mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment five, no longer repeat.
Embodiment seven. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment six has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 0.8mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 2.3mm, high 0.7mm, the base diameter of 40 ° of conical cavity is that 2.3mm, top diameter are 0.5mm, high 2.5mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.5mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment six, no longer repeat.
Embodiment eight. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment seven has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 1.5mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 1.6mm, high 0.95mm, the base diameter of 40 ° of conical cavity is that 1.6mm, top diameter are 1mm, high 0.8mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 1mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment seven, no longer repeat.
Embodiment nine. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment eight has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 1.5mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 1.6mm, high 0.95mm, the base diameter of 40 ° of conical cavity is that 1.6mm, top diameter are 0.8mm, high 1.1mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.8mm, height are 0.15mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment eight, no longer repeat.
Embodiment ten. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment nine has: the structural parameters of the inner cone 6 of two angles of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 4mm, high 1.5mm, the base diameter of 100 ° of conical cavity is that 4mm, top diameter are 1.6mm, high 0.95mm, the base diameter of 40 ° of conical cavity is that 1.6mm, top diameter are 0.7mm, high 1.3mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.7mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment nine, no longer repeat.
Embodiment 11. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment ten has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 2.3mm, high 2.1mm, the base diameter of 100 ° of conical cavity is that 2.3mm, top diameter are 1.7mm, high 0.2mm, the base diameter of 40 ° of conical cavity is that 1.7mm, top diameter are 0.8mm, high 1.2mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.8mm, height are 0.2mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment ten, no longer repeat.
Embodiment 12. microswitch
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment 11 has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 2.3mm, high 2.1mm, the base diameter of 100 ° of conical cavity is that 2.3mm, top diameter are 1.7mm, high 0.2mm, the base diameter of 40 ° of conical cavity is that 1.7mm, top diameter are 1mm, high 0.9mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 1mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment 11, no longer repeat.
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment 12 has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 2.3mm, high 1.1mm, the base diameter of 100 ° of conical cavity is that 2.3mm, top diameter are 1.7mm, high 0.2mm, the base diameter of 40 ° of conical cavity is that 1.7mm, top diameter are 0.8mm, high 1.2mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.8mm, height are 0.2mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment 12, no longer repeat.
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment 13 has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 2.3mm, high 1.1mm, the base diameter of 100 ° of conical cavity is that 2.3mm, top diameter are 1.7mm, high 0.2mm, the base diameter of 40 ° of conical cavity is that 1.7mm, top diameter are 1mm, high 0.9mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 1mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment 13, no longer repeat.
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment 14 has: the structural parameters of two angle inner cones 6 of the microswitch that this is routine are selected as follows: the diameter of the cylindrical cavity of its bottom is 2.3mm, high 2.1mm, the base diameter of 100 ° of conical cavity is that 2.3mm, top diameter are 1.7mm, high 0.2mm, the base diameter of 40 ° of conical cavity is that 1.7mm, top diameter are 0.3mm, high 1.9mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.3mm, height are 0mm.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment 14, no longer repeat.
This routine microswitch general structure can be united with Fig. 1～Fig. 5 etc. and illustrated, the microswitch difference of the microswitch that this is routine and embodiment one～embodiment 15 has: 1. the structural parameters of two angle inner cones 6 of microswitch that should example are selected as follows: the diameter of the cylindrical cavity of its bottom is 2.3mm, high 1.1mm, the base diameter of 100 ° of conical cavity is that 2.3mm, top diameter are 1.7mm, high 0.2mm, the base diameter of 40 ° of conical cavity is that 1.7mm, top diameter are 0.3mm, high 1.9mm, and the diameter of making the cylindrical cavity at the end with 40 ° of conical cavity is that 0.3mm, height are 0mm.2. if microswitch that should example is selected different prill diameter (is 0.8mm or 1mm or 1.2mm etc. as its diameter), should select the size and the structure of the different two angle inner cones of design according to the different-diameter of prill, as long as its function can be finished or satisfy to the inner cone structure and the size of the prill of design and supporting two angles--the reliable and stable structure of on off state all can be used when controlling this microswitch inversion.All the other do not state this routine microswitch, are same as entirely described in embodiment one～embodiment 15, no longer repeat.
Claims (9)
1. microswitch, include shell and interior microswitch structure thereof, be characterised in that: this microswitch is provided with two angle inversion switch structures, the described pair of angle inversion switch structure is by the inner cone of two angles, prill in the inner cone, light-operated light send-receive mechanism and microswitch circuit module are formed, the prill of activity in the inner cone, light-operated light path hole is set on the inner cone body wall, the light path hole site is provided with or is equipped with light-operated light send-receive mechanism and electronic circuit thereof on the inner cone outer wall, form the complete two angle inversion switch mechanism of a cover, when angle＜20 ° are inverted at this microswitch by this pair angle inversion switch mechanism, controlling this microswitch is " pass " state, when this microswitch was inverted angle＞50 °, controlling this microswitch was " opening " state.
2. microswitch according to claim 1, be characterised in that: the described light-operated light send-receive mechanism of this microswitch is that pulse signal is made the photoelectricity coupling circuit that drives and is made up of light-emitting diode, phototriode and current-limiting resistance, light-emitting diode and phototriode light path are installed in light path hole site on the inner cone outer wall with aiming at, and the pulse signal output end of the pulse voltage generation circuit of microswitch circuit module connects the positive pole of light-emitting diode.
3. microswitch according to claim 1, be characterised in that: the detailed structure of two angle invert mechanisms of described this microswitch is: the structure of described pair of angle inner cone of this microswitch is that inner bottom is a cylindrical cavity, connection and transition are made 100 ° of conical cavity of tapering at the end for it above the cylindrical cavity, connection and transition are its 100 ° 40 ° of conical cavity of tapering of doing the end above the conical cavity again, connection and transition are its 40 ° of ducted bodies of making the cylindrical cavity at the end above the conical cavity again, when this microswitch is in difference inversion angle, the moving position of control prill in this pair angle inner cone, the moving position of prill control light path on-off is promptly by light-operated light send-receive mechanism and its microswitch circuit module output signal of electronic circuit control thereof and to control this microswitch be " pass " or " opening " state; If during with this microswitch central axis level is 0 ° of datum line, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turn clockwise and the anglec of rotation be 0 °～20 ° or the anglec of rotation when being 160 °～360 ° this microswitch be " pass " state; When the microswitch anglec of rotation was 50 °～130 °, this microswitch was " opening " state; In other anglec of rotation, this microswitch is in or the inversion critical condition of " opening " state or " pass " state.
4. microswitch according to claim 1, be characterised in that: described this microswitch circuit module comprises the photoelectricity coupling circuit, is subjected to electric control signal generation circuit, clock circuit, electric power management circuit on the pulse voltage generation circuit, time-delay of photoelectricity coupling circuit control.
5. microswitch according to claim 3, be characterised in that: this microswitch is if be 0 ° of datum line during with this microswitch central axis level, with this microswitch central axis and this microswitch bottom line intersection point is the center, when microswitch turns clockwise and the anglec of rotation when being 20 °～160 °, if prill cuts off light path because of action of gravity activity to the place, light path hole that inner cone is provided with, the emitter output zero level of phototriode, the control time-delay is gone up electric control signal generation circuit and is picked up counting, continuously timing full after 16 seconds time-delay go up the output of electric control signal generation circuit and uprise level, this microswitch enters " opening " state from " pass " state; Can not continue more than 16 seconds if prill cuts off light path, electric control signal generation circuit automatically resets and exports zero level time-delay in, and it is " pass " state that this microswitch is controlled in continuation.
6. microswitch according to claim 4, be characterised in that: electric control signal generation circuit is that the master constitutes by programmable logic device in the pulse voltage generation circuit of this microswitch, the time-delay, the pulse signal output end of pulse voltage generation circuit connects the positive pole of light-emitting diode, and electric control signal is controlled " opening " or " pass " state of this microswitch in the time-delay that electric control signal generation circuit produces in the time-delay.
7. microswitch according to claim 6 is characterised in that: the pulse voltage generation circuit of this microswitch is made of 12 binary system asynchronous counters of the internal logic circuit of CPLD and hardware description language program thereof, 7 binary system asynchronous counters and hardware description language program, d type flip flop and hardware description language program thereof, not gate.
8. microswitch according to claim 6 is characterised in that: electric control signal generation circuit is by 12 binary system asynchronous counters of the internal logic circuit of CPLD and hardware description language program thereof, 7 binary system asynchronous counters and hardware description language program, d type flip flop and hardware description language programs thereof, constitute with door in the time-delay of this microswitch.
9. microswitch according to claim 1 is characterised in that: the padded coaming that is filled with shock resistance and anti-vibration between the shell of this microswitch and interior microswitch structure thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010118052 CN101800532A (en) | 2010-02-26 | 2010-02-26 | Micro switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010118052 CN101800532A (en) | 2010-02-26 | 2010-02-26 | Micro switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101800532A true CN101800532A (en) | 2010-08-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010118052 Pending CN101800532A (en) | 2010-02-26 | 2010-02-26 | Micro switch |
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| CN (1) | CN101800532A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107009975A (en) * | 2015-11-18 | 2017-08-04 | 英飞凌科技股份有限公司 | System and method for sync driver circuit |
| CN110567637A (en) * | 2019-09-17 | 2019-12-13 | 中北大学 | device for measuring temperature and pressure of transient flow field of explosion field |
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| US4042796A (en) * | 1975-10-15 | 1977-08-16 | Zink Enterprises Security Systems | Inertia switch for sensing vibration forces |
| JP2000251596A (en) * | 1999-02-26 | 2000-09-14 | Nihon Kaiheiki Industry Co Ltd | Tilting switch |
| CN101252057A (en) * | 2007-12-13 | 2008-08-27 | 中北大学 | Minitype inversion switch |
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| US3889774A (en) * | 1974-06-24 | 1975-06-17 | George B Schwenk | Accident responsive automatic ignition cut-off switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107009975A (en) * | 2015-11-18 | 2017-08-04 | 英飞凌科技股份有限公司 | System and method for sync driver circuit |
| CN110567637A (en) * | 2019-09-17 | 2019-12-13 | 中北大学 | device for measuring temperature and pressure of transient flow field of explosion field |
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Open date: 20100811 |