CN101800529A - Pulse signal modulation and power amplification circuit - Google Patents
Pulse signal modulation and power amplification circuit Download PDFInfo
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- CN101800529A CN101800529A CN 201010127362 CN201010127362A CN101800529A CN 101800529 A CN101800529 A CN 101800529A CN 201010127362 CN201010127362 CN 201010127362 CN 201010127362 A CN201010127362 A CN 201010127362A CN 101800529 A CN101800529 A CN 101800529A
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Abstract
The invention discloses a pulse signal modulation and power amplification circuit, which can be used for modulation and power amplification of signals with frequency of 300 KHz and duty ratio of 30 percent. A rising edge and a falling edge of the pulse signal output by the circuit can reach 50ns. Two MOS tubes may be too hot in case of too high frequency. Firstly, the falling edge and the rising edge of the MOS tubes are too large, and the power consumption of the tubes is high, so the time of the rising edge and the falling edge is necessarily reduced; and secondly, when a truncated tube V37 is conducted, V19 is not disconnected yet, so conduction loss is present. Therefore, the voltage value of a V15 voltage stabilizing tube is to be increased and the winding mode of a front transformer is to be changed so as to reduce the distributed capacitance in the circuit as possible. A small resistor with dozens of ohms can be serially connected with a drain electrode of V19, so as to reduce the current for conduction of the MOS tubes, thereby reducing the loss of the tubes.
Description
Technical field
The present invention relates to circuit control technology field, refer more particularly to the circuit of the modulation and the power amplification that are used for realizing high-frequency pulse signal, be specially a kind of pulse signal modulation and power amplification circuit.
Background technology
Common modulation circuit is the grid source electrode that is input to metal-oxide-semiconductor with a pulse small-signal, forms the power amplification control signal thereby control the conducting of metal-oxide-semiconductor drain-source and end.But the signal modulation circuit of this mode only is applicable to the amplification of the narrow pulse width signal of low frequency, and the circuit-formed smear especially severe of this kind.Because metal-oxide-semiconductor itself exists interelectrode capacitance, therefore metal-oxide-semiconductor still is in conducting state when signal ends, will seriously widen pulse duration like this, if the duty ratio of pulse signal is bigger, possible metal-oxide-semiconductor will be in conducting state always, can not obtain the amplifying signal that circuit designers is expected in advance.
Summary of the invention
The purpose of this invention is to provide a kind of pulse signal modulation and power amplification circuit, realize the amplification of high-frequency high duty ratio control signal, widened problem with smear with the pulsewidth that solves control wave in the modulation circuit with simple circuit.
In order to achieve the above object, the technical solution adopted in the present invention is:
Pulse signal modulation and power amplification circuit, it is characterized in that: include two same signals amplifying circuit and one road pulse control signal and form circuit, described signal amplification circuit includes the chip that model is A2631 respectively, described pulse control signal forms circuit two-way output, be connected with the signal input pin of signal amplification circuit chips respectively, to the opposite signal of two paths of signals amplifying circuit output;
Described one road signal amplification circuit includes metal-oxide-semiconductor V19, two grounded base triode V17, V18, be connected the triode V16 between described triode V17 base stage and the collector electrode, be connected base stage and the resistance R between the collector electrode 16 of described triode V18, the emitter of described triode V17 is by resistance R 17, R18, the emitter of triode V18 is connected with the grid of metal-oxide-semiconductor V19 respectively by resistance R 18, the collector electrode of triode V17 connects the external power source positive pole, the collector electrode of triode V18 connects the external power source negative pole, the base stage of described triode V16 is by capacitor C parallel with one another 12 and resistance R 15, emitter is connected with the 7th pin of chip respectively by resistance R 14, the emitter of described triode V16 also connects the external power source positive pole, first pin of described chip and second pin are input pin, the road output lead that forms circuit with pulse control signal is connected, the 5th pin is by voltage stabilizing didoe V14 parallel with one another, capacitor C 10 connects the external power source positive pole, the 5th pin is also by resistance R 13, that connect with resistance R 13 and in parallel each other capacitor C 11, voltage stabilizing didoe V15 connects the external power source negative pole, and the 8th pin of described chip connects the positive pole of external power source; Source electrode connection+400V the voltage of described metal-oxide-semiconductor V19, the drain electrode of metal-oxide-semiconductor V19 is by resistance R 19, the R42 connection-400V voltage of series connection mutually;
Described another road signal amplification circuit includes metal-oxide-semiconductor V37, two grounded base triode V35, V36, be connected the triode V34 between described triode V35 base stage and the collector electrode, be connected base stage and the resistance R between the collector electrode 36 of described triode V36, the emitter of described triode V35 is by resistance R 37, R38, the emitter of V36 is connected with the grid of metal-oxide-semiconductor V37 respectively by resistance R 38, the collector electrode of triode V35 connects the external power source positive pole, the collector electrode of triode V36 connects the external power source negative pole, the base stage of described triode V34 is by capacitor C parallel with one another 23 and resistance R 35, emitter is connected with the 7th pin of chip respectively by resistance R 34, the emitter of described triode V34 also connects the external power source positive pole, first pin of described chip and second pin are input pin, another road output lead that forms circuit with pulse control signal is connected, the 5th pin is by voltage stabilizing didoe V32 parallel with one another, capacitor C 21 connects the external power source positive pole, the 5th pin is also by resistance R 33, that connect with resistance R 33 and in parallel each other capacitor C 22, voltage stabilizing didoe V33 connects the external power source negative pole, and the 8th pin of described chip connects the positive pole of external power source; The source electrode of described metal-oxide-semiconductor V37 is connected with described resistance R 19, and the drain electrode of metal-oxide-semiconductor V37 is by resistance R 41 connection-400V voltages; Have lead to draw between described resistance R 19 and the resistance R 42, the described lead of drawing is connected with resistance R 43, by the output of resistance R 43 as entire circuit;
Described pulse control signal forms circuit and includes a receiving terminal with the optical fiber splice of external pulse signal source connection, the receiving terminal of described optical fiber splice is by capacitor C parallel with one another 16, voltage stabilizing didoe V23 is connected with external power source is anodal, the receiving terminal of optical fiber splice is connected with the external power source negative pole by resistance R 21, there is the base stage of triode V24 to be connected with the receiving terminal of described optical fiber splice by resistance R, the emitter of described triode V24 connects the external power source positive pole, also include triode V26, the emitter of described triode V26 connects the external power source negative pole, base stage is passed through electric capacity, resistance R 22, connect and capacitor C 17 in parallel each other with resistance R 22, R23 is connected with the negative pole of external power source, the collector electrode of described triode V24 is connected to described resistance R 23 by diode V25, the collector electrode of triode V24 is the resistance R 24 by connecting also, R25 is connected with the external power source negative pole, have between resistance R 24 and the resistance R 25 and be connected to resistance R parallel with one another 26, the lead of capacitor C 18 is drawn, describedly draw the base stage that lead is connected to a triode V27, described triode V27 collector electrode connects the external power source positive pole by resistance R 27, emitter connects the base stage of another triode V28 by resistance R 28, the base stage of described triode V28 also connects the external power source negative pole by resistance R 29, collector electrode connects the external power source positive pole by resistance R 30, emitter connects the external power source negative pole, also is connected to resistance R 31 between triode V28 collector and emitter; There is lead to draw from described resistance R 28 two ends, insert as one tunnel output on first pin and second pin of one road signal amplification circuit chips wherein, on triode V26 collector electrode, triode V28 collector electrode, there is lead to draw respectively, inserts on first pin and second pin of another road signal amplification circuit chips as another road output.
Externally power supply inserts resistance R 12, the light-emitting diode V13 that is connected to mutual series connection between the lead of one road signal amplification circuit, external power source inserts resistance R 32, the light-emitting diode V31 that is connected to mutual series connection between the lead of another road signal amplification circuit, external power source inserts resistance R 20, the light-emitting diode V22 that is connected to mutual series connection between the lead that pulse control signal forms circuit, by light-emitting diode as indicator light.Also by capacitor C 13 ground connection, by capacitor C 13 protection metal-oxide-semiconductor V19, the resistance R 41 that connects in the drain electrode of metal-oxide-semiconductor V37 is also by capacitor C 28 ground connection, by capacitor C 28 protection metal-oxide-semiconductor V37 on the source electrode of metal-oxide-semiconductor V19.
The interelectrode capacitance that the present invention has utilized triode V17 itself to exist dexterously allows electric capacity discharges faster between the grid source electrode of metal-oxide-semiconductor, makes metal-oxide-semiconductor in signal easier shutoff during in low level, is difficult for producing the phenomenon that pulsewidth is widened.Pulse control signal forms circuit and provides opposite signal to the two paths of signals amplifying circuit, and with one road signal amplification circuit wherein as output, can solve the problem that the signal of the output of using a metal-oxide-semiconductor control amplifying signal has pulse to widen and trail.
Description of drawings
Fig. 1 is one road signal amplification circuit circuit diagram.
Fig. 2 forms circuit figure for pulse control signal.
Fig. 3 is a circuit diagram of the present invention.
Embodiment
Pulse signal modulation and power amplification circuit, include two same signals amplifying circuit and one road pulse control signal and form circuit, signal amplification circuit includes the chip that model is A2631 respectively, pulse control signal forms circuit two-way output, be connected with the signal input pin of signal amplification circuit chips respectively, to the opposite signal of two paths of signals amplifying circuit output;
One road signal amplification circuit includes metal-oxide-semiconductor V19, two grounded base triode V17, V18, be connected the triode V16 between triode V17 base stage and the collector electrode, be connected base stage and the resistance R between the collector electrode 16 of triode V18, the emitter of triode V17 is by resistance R 17, R18, the emitter of triode V18 is connected with the grid of metal-oxide-semiconductor V19 respectively by resistance R 18, the collector electrode of triode V17 connects the external power source positive pole, the collector electrode of triode V18 connects the external power source negative pole, the base stage of triode V16 is by capacitor C parallel with one another 12 and resistance R 15, emitter is connected with the 7th pin of chip respectively by resistance R 14, the emitter of triode V16 also connects the external power source positive pole, first pin of chip and second pin are input pin, the road output lead that forms circuit with pulse control signal is connected, the 5th pin is by voltage stabilizing didoe V14 parallel with one another, capacitor C 10 connects the external power source positive pole, the 5th pin is also by resistance R 13, that connect with resistance R 13 and in parallel each other capacitor C 11, voltage stabilizing didoe V15 connects the external power source negative pole, and the 8th pin of chip connects the positive pole of external power source; Source electrode connection+400V the voltage of metal-oxide-semiconductor V19, the drain electrode of metal-oxide-semiconductor V19 is by resistance R 19, the R42 connection-400V voltage of series connection mutually;
Another road signal amplification circuit includes metal-oxide-semiconductor V37, two grounded base triode V35, V36, be connected the triode V34 between triode V35 base stage and the collector electrode, be connected base stage and the resistance R between the collector electrode 36 of triode V36, the emitter of triode V35 is by resistance R 37, R38, the emitter of V36 is connected with the grid of metal-oxide-semiconductor V37 respectively by resistance R 38, the collector electrode of triode V35 connects the external power source positive pole, the collector electrode of triode V36 connects the external power source negative pole, the base stage of triode V34 is by capacitor C parallel with one another 23 and resistance R 35, emitter is connected with the 7th pin of chip respectively by resistance R 34, the emitter of triode V34 also connects the external power source positive pole, first pin of chip and second pin are input pin, another road output lead that forms circuit with pulse control signal is connected, the 5th pin is by voltage stabilizing didoe V32 parallel with one another, capacitor C 21 connects the external power source positive pole, the 5th pin is also by resistance R 33, that connect with resistance R 33 and in parallel each other capacitor C 22, voltage stabilizing didoe V33 connects the external power source negative pole, and the 8th pin of chip connects the positive pole of external power source; The source electrode of metal-oxide-semiconductor V37 is connected with resistance R 19, and the drain electrode of metal-oxide-semiconductor V37 is by resistance R 41 connection-400V voltages; There is lead to draw between resistance R 19 and the resistance R 42, draws lead and be connected with resistance R 43, by the output of resistance R 43 as entire circuit;
Pulse control signal forms circuit and includes a receiving terminal with the optical fiber splice of external pulse signal source connection, the receiving terminal of optical fiber splice is by capacitor C parallel with one another 16, voltage stabilizing didoe V23 is connected with external power source is anodal, the receiving terminal of optical fiber splice is connected with the external power source negative pole by resistance R 21, there is the base stage of triode V24 to be connected with the receiving terminal of optical fiber splice by resistance R, the emitter of triode V24 connects the external power source positive pole, also include triode V26, the emitter of triode V26 connects the external power source negative pole, base stage is passed through electric capacity, resistance R 22, connect and capacitor C 17 in parallel each other with resistance R 22, R23 is connected with the negative pole of external power source, the collector electrode of triode V24 is connected to resistance R 23 by diode V25, the collector electrode of triode V24 is the resistance R 24 by connecting also, R25 is connected with the external power source negative pole, have between resistance R 24 and the resistance R 25 and be connected to resistance R parallel with one another 26, the lead of capacitor C 18 is drawn, draw lead and be connected to the base stage of a triode V27, triode V27 collector electrode connects the external power source positive pole by resistance R 27, emitter connects the base stage of another triode V28 by resistance R 28, the base stage of triode V28 also connects the external power source negative pole by resistance R 29, collector electrode connects the external power source positive pole by resistance R 30, emitter connects the external power source negative pole, also is connected to resistance R 31 between triode V28 collector and emitter; There is lead to draw from resistance R 28 two ends, insert as one tunnel output on first pin and second pin of one road signal amplification circuit chips wherein, on triode V26 collector electrode, triode V28 collector electrode, there is lead to draw respectively, inserts on first pin and second pin of another road signal amplification circuit chips as another road output.
Externally power supply inserts resistance R 12, the light-emitting diode V13 that is connected to mutual series connection between the lead of one road signal amplification circuit, external power source inserts resistance R 32, the light-emitting diode V31 that is connected to mutual series connection between the lead of another road signal amplification circuit, external power source inserts resistance R 20, the light-emitting diode V22 that is connected to mutual series connection between the lead that pulse control signal forms circuit, by light-emitting diode as indicator light.Also by capacitor C 13 ground connection, by capacitor C 13 protection metal-oxide-semiconductor V19, the resistance R 41 that connects in the drain electrode of metal-oxide-semiconductor V37 is also by capacitor C 28 ground connection, by capacitor C 28 protection metal-oxide-semiconductor V37 on the source electrode of metal-oxide-semiconductor V19.
Pulsewidth is widened the circuit solution one with the pulse back edge tailing problem:
Because metal-oxide-semiconductor itself exists interelectrode capacitance, therefore when the small-pulse effect of control ended, the grid source capacitance was discharged, and gate-source voltage can not drop to 0 volt immediately, thereby will cause the problem of widening of pulsewidth.If think head it off, will be when the small-pulse effect signal end, the grid source electrode can form a reverse potential, forces metal-oxide-semiconductor to end.Physical circuit as shown in Figure 1.
The interelectrode capacitance of having used V17 itself to exist among the figure cleverly.When 1 pin and 2 pin have pulse signal, 5 and the 7 pin conductings of A2631, there is an electromotive force in the B end of triode V16 with the E end, make the V16 conducting, the B of V17 and V18 end is in high potential, and makes the V17 conducting, thereby the grid of metal-oxide-semiconductor is in high potential, impel the drain-source utmost point conducting of metal-oxide-semiconductor, add+positive bias of 400V exports by metal-oxide-semiconductor.
When 1 pin and the disappearance of 2 pin pulse signals, the B end of V16 is in and the identical current potential of E end, the V16 triode ends, the B electrode potential of V17 and V18 revert to electronegative potential, because there is interelectrode capacitance in V17 itself, so it can not turn-off immediately, just make that the current potential of E end of V18 is a high potential, and make the V18 conducting, at this moment will force to be added in reverse potential of grid source electrode of metal-oxide-semiconductor, magnitude of voltage is the magnitude of voltage at V15 two ends, will allow like this electric capacity discharges faster between the grid source electrode of metal-oxide-semiconductor, make metal-oxide-semiconductor in signal easier shutoff during, be difficult for producing the phenomenon that pulsewidth is widened in low level.So the metal-oxide-semiconductor that the magnitude of voltage that increases the V15 two ends also can better make ends.
As can be seen from Figure 1, this circuit has utilized the reverse potential of the moment that interelectrode capacitance that V17 itself exists and V18 form cleverly, solved easily that pulsewidth widens between topic.
The signal pulsewidth is widened the circuit solution two with the signal trailing edge tailing problem:
If use the output of a metal-oxide-semiconductor control amplifying signal, even there is above-mentioned said reverse potential can not well make the pulsewidth of output modulation signal reach the result that the designer thinks, the signal of output has pulse to widen and conditions of streaking.Consider in view of the situation, if the metal-oxide-semiconductor in parallel of the R43 two ends in figure one, when the pulse signal of input changes to low level by high level, the R43 conducting, will enforceablely move output signal to low level like this, so just can solve pulsewidth and widen and the signal trailing edge conditions of streaking.The tailbiter circuit that a figure one is arranged so again, but the signal that will require like this to be input to two A2631 has just opposite.The circuit of formation signal as shown in Figure 2.
3 pin and 4 pin among Fig. 2 are input in the truncation impulse circuit.N2 is the receiving terminal of optical fiber adapter, and when pulse signal was in low level, the B of V24 end was in and its E end same potential, and end at the CE two ends of V24.When pulse signal was in high level, the B of V24 end was lower than the current potential of its E end, and difference is controlled by V23.At this moment V24 conducting, the V27 of back and the B of V26 end all are in high potential so these two also conductings of triode.The V26 conducting, 3 pin of signal are low level just, the V27 conducting, just there is a magnitude of voltage control A2631 at the R28 two ends, and the small-signal pulse of this pulse and input is consistent.The V27 conducting also makes the B end of V28 be in high potential, the BE terminal voltage value of V28 is for allowing the R29 both end voltage at this moment, the V28 conducting, the C of V28 end just is in electronegative potential like this, and to output to the impulse waveform of A2631 just opposite with the small-signal of importing for 3 pin of signal and 4 pin like this.When the small-pulse effect signal of input changed to low level, V24 ended, and V27 and V28 also end like this, and 1 pin of output signal and the electrical potential difference of 2 pin are zero, did not just have pulse output.Because the existence of the BE end electric capacity of C17 and V26 is arranged, make that V26 can not end immediately when V24 ended, so 3 pin of this moment are in low level, 4 pin are in high level, so just the break-make of truncation pipe below the small-pulse effect signal of input can form a little truncation pulse control when changing to low level.Can change the pulsewidth size of truncation pulse herein by the capacitance that changes C17.
The integral pulse signal amplifies and modulation circuit figure such as Fig. 3.
Claims (1)
1. pulse signal modulation and power amplification circuit, it is characterized in that: include two same signals amplifying circuit and one road pulse control signal and form circuit, described signal amplification circuit includes the chip that model is A2631 respectively, described pulse control signal forms circuit two-way output, be connected with the signal input pin of signal amplification circuit chips respectively, to the opposite signal of two paths of signals amplifying circuit output;
Described one road signal amplification circuit includes metal-oxide-semiconductor V19, two grounded base triode V17, V18, be connected the triode V16 between described triode V17 base stage and the collector electrode, be connected base stage and the resistance R between the collector electrode 16 of described triode V18, the emitter of described triode V17 is by resistance R 17, R18, the emitter of triode V18 is connected with the grid of metal-oxide-semiconductor V19 respectively by resistance R 18, the collector electrode of triode V17 connects the external power source positive pole, the collector electrode of triode V18 connects the external power source negative pole, the base stage of described triode V16 is by capacitor C parallel with one another 12 and resistance R 15, emitter is connected with the 7th pin of chip respectively by resistance R 14, the emitter of described triode V16 also connects the external power source positive pole, first pin of described chip and second pin are input pin, the road output lead that forms circuit with pulse control signal is connected, the 5th pin is by voltage stabilizing didoe V14 parallel with one another, capacitor C 10 connects the external power source positive pole, the 5th pin is also by resistance R 13, that connect with resistance R 13 and in parallel each other capacitor C 11, voltage stabilizing didoe V15 connects the external power source negative pole, and the 8th pin of described chip connects the positive pole of external power source; Source electrode connection+400V the voltage of described metal-oxide-semiconductor V19, the drain electrode of metal-oxide-semiconductor V19 is by resistance R 19, the R42 connection-400V voltage of series connection mutually;
Described another road signal amplification circuit includes metal-oxide-semiconductor V37, two grounded base triode V35, V36, be connected the triode V34 between described triode V35 base stage and the collector electrode, be connected base stage and the resistance R between the collector electrode 36 of described triode V36, the emitter of described triode V35 is by resistance R 37, R38, the emitter of V36 is connected with the grid of metal-oxide-semiconductor V37 respectively by resistance R 38, the collector electrode of triode V35 connects the external power source positive pole, the collector electrode of triode V36 connects the external power source negative pole, the base stage of described triode V34 is by capacitor C parallel with one another 23 and resistance R 35, emitter is connected with the 7th pin of chip respectively by resistance R 34, the emitter of described triode V34 also connects the external power source positive pole, first pin of described chip and second pin are input pin, another road output lead that forms circuit with pulse control signal is connected, the 5th pin is by voltage stabilizing didoe V32 parallel with one another, capacitor C 21 connects the external power source positive pole, the 5th pin is also by resistance R 33, that connect with resistance R 33 and in parallel each other capacitor C 22, voltage stabilizing didoe V33 connects the external power source negative pole, and the 8th pin of described chip connects the positive pole of external power source; The source electrode of described metal-oxide-semiconductor V37 is connected with described resistance R 19, and the drain electrode of metal-oxide-semiconductor V37 is by resistance R 41 connection-400V voltages; Have lead to draw between described resistance R 19 and the resistance R 42, the described lead of drawing is connected with resistance R 43, by the output of resistance R 43 as entire circuit;
Described pulse control signal forms circuit and includes a receiving terminal with the optical fiber splice of external pulse signal source connection, the receiving terminal of described optical fiber splice is by capacitor C parallel with one another 16, voltage stabilizing didoe V23 is connected with external power source is anodal, the receiving terminal of optical fiber splice is connected with the external power source negative pole by resistance R 21, there is the base stage of triode V24 to be connected with the receiving terminal of described optical fiber splice by resistance R, the emitter of described triode V24 connects the external power source positive pole, also include triode V26, the emitter of described triode V26 connects the external power source negative pole, base stage is passed through electric capacity, resistance R 22, connect and capacitor C 17 in parallel each other with resistance R 22, R23 is connected with the negative pole of external power source, the collector electrode of described triode V24 is connected to described resistance R 23 by diode V25, the collector electrode of triode V24 is the resistance R 24 by connecting also, R25 is connected with the external power source negative pole, have between resistance R 24 and the resistance R 25 and be connected to resistance R parallel with one another 26, the lead of capacitor C 18 is drawn, describedly draw the base stage that lead is connected to a triode V27, described triode V27 collector electrode connects the external power source positive pole by resistance R 27, emitter connects the base stage of another triode V28 by resistance R 28, the base stage of described triode V28 also connects the external power source negative pole by resistance R 29, collector electrode connects the external power source positive pole by resistance R 30, emitter connects the external power source negative pole, also is connected to resistance R 31 between triode V28 collector and emitter; There is lead to draw from described resistance R 28 two ends, insert as one tunnel output on first pin and second pin of one road signal amplification circuit chips wherein, on triode V26 collector electrode, triode V28 collector electrode, there is lead to draw respectively, inserts on first pin and second pin of another road signal amplification circuit chips as another road output.
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| CN2175432Y (en) * | 1993-07-07 | 1994-08-24 | 李家荣 | Maximum power switch regulated power supply |
| CN2407777Y (en) * | 1999-11-19 | 2000-11-29 | 刘中一 | Photoelectric therapeutic instrument for ear point |
| US20030201758A1 (en) * | 2002-04-25 | 2003-10-30 | Seng-Feng Chen | Voltage regulator with pulse width modulation in dual frequencies |
| US20070166054A1 (en) * | 2006-01-12 | 2007-07-19 | Nec Laboratories America, Inc. | Optical Communication System and Method for Generating Dark Return-to-Zero and DWDM Optical MM-Wave Generation for ROF Downstream Link Using Optical Phase Modulator and Optical Interleaver |
| CN101252253A (en) * | 2008-03-19 | 2008-08-27 | 中国科学院上海光学精密机械研究所 | Phase modulation device of high power laser apparatus |
| CN101499607A (en) * | 2009-03-13 | 2009-08-05 | 深圳市明鑫科技发展有限公司 | Single frequency pulse/continuous dual output optical fiber laser |
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- 2010-03-16 CN CN 201010127362 patent/CN101800529A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2175432Y (en) * | 1993-07-07 | 1994-08-24 | 李家荣 | Maximum power switch regulated power supply |
| CN2407777Y (en) * | 1999-11-19 | 2000-11-29 | 刘中一 | Photoelectric therapeutic instrument for ear point |
| US20030201758A1 (en) * | 2002-04-25 | 2003-10-30 | Seng-Feng Chen | Voltage regulator with pulse width modulation in dual frequencies |
| US20070166054A1 (en) * | 2006-01-12 | 2007-07-19 | Nec Laboratories America, Inc. | Optical Communication System and Method for Generating Dark Return-to-Zero and DWDM Optical MM-Wave Generation for ROF Downstream Link Using Optical Phase Modulator and Optical Interleaver |
| CN101252253A (en) * | 2008-03-19 | 2008-08-27 | 中国科学院上海光学精密机械研究所 | Phase modulation device of high power laser apparatus |
| CN101499607A (en) * | 2009-03-13 | 2009-08-05 | 深圳市明鑫科技发展有限公司 | Single frequency pulse/continuous dual output optical fiber laser |
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Open date: 20100811 |