CN101798059B - Production method of silicon-based nanopore - Google Patents
Production method of silicon-based nanopore Download PDFInfo
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- CN101798059B CN101798059B CN 201010140180 CN201010140180A CN101798059B CN 101798059 B CN101798059 B CN 101798059B CN 201010140180 CN201010140180 CN 201010140180 CN 201010140180 A CN201010140180 A CN 201010140180A CN 101798059 B CN101798059 B CN 101798059B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001039 wet etching Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000000992 sputter etching Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 4
- 230000001681 protective effect Effects 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 238000000708 deep reactive-ion etching Methods 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract description 5
- 238000003754 machining Methods 0.000 abstract 2
- XQGSVNHIIVBMPX-UHFFFAOYSA-N Improsulfan tosylate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1.CS(=O)(=O)OCCC[NH2+]CCCOS(C)(=O)=O XQGSVNHIIVBMPX-UHFFFAOYSA-N 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 239000002808 molecular sieve Substances 0.000 description 4
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005216 hydrothermal crystallization Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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Abstract
The invention provides a production method of a silicon-based nanopore, which comprises the following steps of: 1. covering a protecton material and a top protection material on a silicon substrate, and machining a pattern which needs to be etched on the silicon substrate onto the two layers of protection materials with a micro-production technology, wherein the depth of the pattern reaches the surface of the bottom of the silicon substrate; 2. etching a perpendicular columnar pore on the surface of the bottom of the silicon substrate with a deep reaction ion etching DRIE method; 3. coating photoresist on the surface of the columnar pore; and 4. continually downwards corroding from the end of the columnar pore with potassium hydroxide alkaline solution by means of wet etching, so that an included angle between a corroded inclined plane and the horizontal plane is 53.7 degrees, so as to obtain the silicon-based nanopore with controllable size. The production method provides technical support for the surface controlling technology of atomic beam and the other nanometer machining technologies, and plays a role in promoting.
Description
Technical field
The present invention relates to silicon face process technology and deep process technology field, particularly for the preparation method of a kind of silicon-based nanopore of atom lithography.
Background technology
In nanometer manufacturing field, the application of atom optics technology is an emerging research field, and the method for multiple manufacturing nanoscale material can be provided.The research of a large amount of basic atoms optics provides the method for many different free neutral atoms of manipulation.The main direction of research is the control that atom moves when atom convergence surface now, and purpose is to construct arbitrarily nanostructured at substrate surface.Nano-pore, nanoscale striped, dot matrix or the needed specific pattern of making different size can be used for carrying out atom and move control.
At present about the making of silicon-based nanopore extraordinary method not, this mainly is by the characteristics decision of silicon-based nanopore itself.About the hundreds of micron, want to form at silicon chip hole or the striped of nanometer scale at the thickness of the common silicon chip that semicon industry is used, technically point-device control will be arranged.Synthetic method is mainly adopted in the making of existing nano-pore or nanometer sieve.The people such as Mintova utilize Situ Hydrothermal crystallization method to obtain first Silicalite-1 nano molecular sieve crystal grain [the document 1:Mintova S that particle diameter is evenly distributed, Mo S, Bein T.[J] .Nanosized AlPO4-5 molecular sieves and ultrathin filmsprepared by microwave synthesis.Chem.Mater, 1998,10 (12): 4030～4036], the method operating process is simple, do not need special device, but the poor reproducibility of the molecular sieve crystal size of the method preparation and orientation control, obtain the film of fine and close free of pinholes, at least need several microns thickness, thereby very easily produce be full of cracks when having caused warm change, even come off.People's applied microwave heating techniques such as Xu have successfully been synthesized NaA type molecular screen membrane [document 2:Xu X C, Yang W S, Liu J, et al.[J] .Synthesis of ahigh-permeance NaA zeolite membrane by microwave heating Adv.Mater, 2000,12 (3): 195～197], the method can improve crystallization velocity, and dwindled to a certain extent crystalline size, pile up but local molecular sieve occurs easily, be difficult to be controlled at the support base material surface and form Large-Area-Uniform and fine and close molecular screen membrane.
Summary of the invention
In order to overcome the defective of above-mentioned prior art, the object of the present invention is to provide a kind of preparation method of silicon-based nanopore, can when atom convergence surface, control the movement of atom.
In order to achieve the above object, technical scheme of the present invention is achieved in that
A kind of preparation method of silicon-based nanopore may further comprise the steps:
One, covering protection material 2 and top layer protective material 3 on silicon substrate 1, protective material 2 adopts the chromium layer of sputter, thickness is 300nm, top layer protective material 3 adopts the aluminium lamination of sputter, thickness is 300nm, need to be worked at the figure that silicon substrate 1 etches on the two-layer protective material with Micrometer-Nanometer Processing Technology, the degree of depth of figure arrives the surface of silicon substrate 1;
Two, use the method for deep reaction ion etching DRIE to etch vertical cylinder hole on the surface of silicon substrate 1, the degree of depth of etching depend on the thickness of used silicon chip and the silicon nano hole that will make between distance, according to the distance between the characteristic of anisotropic silicon wet etching and the silicon nano hole that will make, can obtain the degree of depth of wet etching, the degree of depth of deep reaction ion etching DRIE etching is the degree of depth that the thickness of silicon chip deducts wet etching;
Three, coat photoresist 5 on the surface 6 of cylinder hole;
Four, adopt wet etching, utilizing concentration is 30% potassium hydroxide alkalescence solution, down continues corrosion from the cylinder hole end, so that the angle of the inclined-plane 4 that erodes away and horizontal plane is 53.7 °, obtains at last the controlled silicon nano hole of size 7.
Preparation method of the present invention has been avoided traditional synthetic method, and the characteristics that adopt deep reaction ion etching DRIE dry etching and wet etching to combine are made silicon nano hole at common silicon chip.Top layer protective material 3 can be avoided in dry etching the etching to protective material 2 in the preparation method of the present invention; protective material 2 can avoid in wet etching solution to the corrosion of the silicon substrate 1 under the protective layer; matcoveredn 5 on the surface 6 of cylinder hole avoids that the silicon materials of side are corroded in wet etching course.
Description of drawings
Fig. 1 is the profile of manufacturing process of the present invention.
Fig. 2 is the front elevation of manufacturing process of the present invention.
Fig. 3 is the top view of manufacturing process of the present invention.
Fig. 4 is the structural representation of the silicon-based nanopore produced of the present invention.
The specific embodiment
Below in conjunction with accompanying drawing principle of the present invention is elaborated.
A kind of preparation method of silicon-based nanopore may further comprise the steps:
One, referring to Fig. 1, covering protection material 2 and top layer protective material 3 on silicon substrate 1, purpose is the silicon corrosion window that forms with matcoveredn, in dry etching and wet etching process, protected part is not corroded, protective material 2 adopts the chromium layer of sputter, thickness is 300nm, top layer protective material 3 adopts the aluminium lamination of sputter, thickness is 300nm, need to be worked at the figure that silicon substrate 1 etches on the two-layer protective material with Micrometer-Nanometer Processing Technology, the degree of depth of figure arrives the surface of silicon substrate 1;
Two, referring to Fig. 2, use the method for deep reaction ion etching DRIE to etch vertical cylinder hole on the surface of silicon substrate 1, the degree of depth of etching depend on the thickness of used silicon chip and the silicon nano hole that will make between distance, according to the distance between the characteristic of anisotropic silicon wet etching and the silicon nano hole that will make, can obtain the degree of depth of wet etching, the degree of depth that the thickness of silicon chip deducts wet etching can obtain the degree of depth of deep reaction ion etching DRIE etching;
Three, referring to Fig. 1, Fig. 2, coat photoresist 5 on the surface 6 of cylinder hole, avoid that the silicon materials of side are corroded in wet etching course;
Four, referring to Fig. 4, adopt wet etching, utilizing concentration is 30% potassium hydroxide alkalescence solution, down continues corrosion from the cylinder hole end,, so that the angle of the inclined-plane 4 that erodes away and horizontal plane is 53.7 °, obtain at last the controlled silicon nano hole of size 7.
Claims (1)
1. the preparation method of a silicon-based nanopore is characterized in that, may further comprise the steps:
One, at the upper covering protection material (2) of silicon substrate (1) and top layer protective material (3), protective material (2) adopts the chromium layer of sputter, thickness is 300nm, top layer protective material (3) adopts the aluminium lamination of sputter, thickness is 300nm, need to be worked at the figure that silicon substrate (1) etches on the two-layer protective material with Micrometer-Nanometer Processing Technology, the degree of depth of figure arrives the surface of silicon substrate (1);
Two, use the method for deep reaction ion etching to etch vertical cylinder hole on the surface of silicon substrate (1), the degree of depth of etching depend on the thickness of used silicon chip and the silicon nano hole that will make between distance, according to the distance between the characteristic of anisotropic silicon wet etching and the silicon nano hole that will make, can obtain the degree of depth of wet etching, the degree of depth of deep reaction ion etching is the degree of depth that the thickness of silicon chip deducts wet etching;
Three, coat photoresist (5) on the surface (6) of cylinder hole;
Four, adopt wet etching, utilizing concentration is 30% potassium hydroxide alkalescence solution, down continues corrosion from the cylinder hole end, so that the angle of the inclined-plane that erodes away (4) and horizontal plane is 53.7 °, obtains at last the controlled silicon nano hole of size (7).
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| CN102079504A (en) * | 2010-12-07 | 2011-06-01 | 清华大学 | Method for manufacturing high-density silicon-based nano-holes |
| CN102126699A (en) * | 2011-01-28 | 2011-07-20 | 清华大学 | Method for making graph with microsize by utilizing atomic beams and nanometer holes |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706203B2 (en) * | 2001-10-30 | 2004-03-16 | Agilent Technologies, Inc. | Adjustable nanopore, nanotome, and nanotweezer |
| KR20090121544A (en) * | 2008-05-22 | 2009-11-26 | 한양대학교 산학협력단 | Method for forming nanopore |
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| JPS6043309B2 (en) * | 1978-10-06 | 1985-09-27 | 富士ゼロックス株式会社 | Multi nozzle orifice plate |
| US20090061578A1 (en) * | 2007-08-30 | 2009-03-05 | Siew-Seong Tan | Method of Manufacturing a Semiconductor Microstructure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6706203B2 (en) * | 2001-10-30 | 2004-03-16 | Agilent Technologies, Inc. | Adjustable nanopore, nanotome, and nanotweezer |
| KR20090121544A (en) * | 2008-05-22 | 2009-11-26 | 한양대학교 산학협력단 | Method for forming nanopore |
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