CN101794839B - Method for optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device - Google Patents
Method for optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device Download PDFInfo
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- CN101794839B CN101794839B CN2010101074112A CN201010107411A CN101794839B CN 101794839 B CN101794839 B CN 101794839B CN 2010101074112 A CN2010101074112 A CN 2010101074112A CN 201010107411 A CN201010107411 A CN 201010107411A CN 101794839 B CN101794839 B CN 101794839B
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Abstract
The invention discloses a method for optimizing the thickness of the absorbing layer of an indium antimonide photovoltaic detection device. The method is that a spectral response curve under different thickness of the absorbing layer when light is irradiated in an absorbing area is obtained through device simulation, the obtained thickness of the absorbing layer corresponding to the maximum spectral response value is the optimum thickness of the absorbing layer through comparing with the spectral response data measured by experiments, and basis is further provided for the optimization of the thickness of the absorbing layer of the indium antimonide photovoltaic detection device. The invention has very great significance to the improvement of the device performance and the optimization of the device design.
Description
Technical field
The present invention relates to optical semiconductor sensitive detection parts technology, specifically be meant a kind of method of optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device.
Background technology
The infrared electro Detection Techniques obtain develop rapidly in the nineties in 20th century, have developed into large-scale focal plane array imaging technique now, and the extensive focal plane array of high-performance formally is applied in the various great national security projects.Indium antimonide detector responds at 3～5 mu m wavebands, owing to be that intrinsic absorbs the quantum efficiency height.The nineties in 20th century, the indium antimonide infrared focal plane array device was full-fledged, and it develops based on gazing type, dominate in staring military systems.Stare the indium antimonide infrared focus plane and formed different technical characterstics by its purposes: the indium antimonide array characteristics that use in low background strategy and space are that scale is big, noise is low, working temperature is low, frame frequency is low; The indium antimonide array of middle and high background Tactical Application is mainly used in missile guidance and thermal imaging, and the array characteristics are moderate scale, charge handling capacity is strong, frame frequency is high.The indium antimonide semi-conducting material can also be made the p-n junction photovoltaic detector except doing photoconduction, the photoelectromagnetic detector spare, and it is the highly sensitive device of using always at 1～5 mu m waveband.
The p-n junction photovoltaic detector is to make p-n junction accept rayed and obtain energy.When illumination is mapped to p-n junction, knot and near semiconductor thereof absorb luminous energy, valence band electronics induced transition to conduction band forms free electron, then correspondingly forms the free hole in valence band, and these minority carriers are under the effect of p-n junction internal electric field, electronics is shifted to the n district, the p district is then shifted in the hole, and the result makes semi-conductive p district positively charged, and the n district is electronegative, Here it is produces the principle of photogenic voltage when p-n junction is subjected to rayed, and the Infrared Detectors made of principle is called photovoltaic detector in view of the above.As seen, photovoltaic effect is a kind of minority carrier subprocess, and the life-span of minority carrier is shorter than majority carrier usually, and when minority carrier recombination was fallen, photovoltage had just disappeared.For this reason, faster based on the photovoltaic detector of photovoltaic effect than the photoconductive detector response made from same material.But its response often is subjected to the restriction of several factors, influences device performance.
Therefore, the optimised devices structure seems particularly important to improve photoresponse.The present invention is that single p-n junction is set about research from the photosensitive unit of focal plane array, investigates the influence of basic structure to photoresponse, and the result who draws will have certain directive significance to the development of large-scale device.
Summary of the invention
The invention provides a kind of method of optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device, this method obtains the curve that the sensitive detection parts responsiveness changes with absorber thickness by simulation, by having obtained the optimal absorption layer thickness with the experimental data contrast.Its step is as follows:
1. make up two-dimentional p
+-on-n type indium antimonide photovoltaic detector spare model, p district doping content is 1016cm
-3, n district doping content is 9 * 10
14Cm
-3, and at entire device outer surface passivation one deck SiO
2, p district and n district difference installing electrodes is to measure output voltage signal simultaneously;
2. make 8 medium wave photodiode samples that different n district thickness is the indium antimonide photovoltaic detector spare chip of different absorber thicknesses according to the structural parameters in the step 1, serve as the experiment measuring sample, its absorber thickness is respectively 6 μ m, 8 μ m, 10 μ m, 12 μ m, 14 μ m, 18 μ m, 25 μ m and 30 μ m;
3. the performance parameter of gained sample obtains in the measuring process 2: energy gap is 0.227eV, and effective electron mass is 0.014m
0, effective hole mass m
Hp=0.43m
0, m
Lp=0.015m
0, m wherein
0Be the free electron quality, electron mobility is 10
5～10
6Cm
2/ Vs, hole mobility is 10
3～10
6Cm
2/ Vs, intrinsic carrier concentration n
i=1.513 * 10
10Cm
-3, electron diffusion coefficient D
n=226.0cm
2/ s, hole diffusion coefficient D
p=66.0cm
2/ s, the electronic carrier life-span is about 10
-10S, the holoe carrier life-span is about 10
-6S, optical absorption coefficient are 4150.0/cm, recombination-rate surface s
1=s
2=10
12Cm/s, relative dielectric constant are 16.8;
4. structure physical model: the fundamental equation of semiconductor device numerical simulation is a Poisson's equation, the continuity equation in electronics and hole, the electron transport equation, photoresponse adds equation by the charge carrier generation rate, surface recombination adds equation, comprise compound indirectly, auger recombination and radiation recombination, also to consider the thermal effect of charge carrier simultaneously, the High-Field saturation effect, with Finite Element Method discretization simultaneous iterative, the tunneling effect of potential barrier is an independent equation, find the solution from being in harmony with above-mentioned equation, in the simulation process described in the used device model such as step 1, described in used the device performance parameter such as step 3;
5. adjusting physical parameter, making the simulated environment temperature is 77K, adds the incident light vertical irradiation to device measured zone n district, i.e. absorbed layer, the luminous power perseverance is 0.0001W/cm
-2, fixedly absorber thickness is constant, changes lambda1-wavelength, the curve that is changed with lambda1-wavelength by the numerical simulation rate that meets with a response;
6. change absorber thickness, repeating step 5 obtains the curve that responsiveness changes with lambda1-wavelength under a series of different absorber thicknesses;
7. choose the peak wavelength of responsiveness curve in the step 6, promptly cut-off wavelength is 5.5 μ m, as lambda1-wavelength, changes absorber thickness, the curve that is changed with absorber thickness by the numerical simulation rate that meets with a response;
8. in experimentation, choose cut-off wavelength 5.5 μ m equally as lambda1-wavelength, the luminous power perseverance is 0.0001W/cm
-2Make the measured zone of incident light difference vertical irradiation to 8 samples described in the step 2, it is absorbed layer, adopt the response spectrum curve of fourier spectrometer NEXUS 670 measuring samples under liquid nitrogen temperature, by gathering light path background and the response device that contains background respectively, finish spectral measurement through the automatic background correction of instrument again;
9. resulting experimental data in resulting analogue data and the step 8 in the step 7 is compared, the pairing thickness of the rate that meets with a response peak value is the optimal absorption layer thickness.
Advantage of the present invention is: can determine the Changing Pattern of the responsiveness of indium antimonide photovoltaic detector under the illumination with absorber thickness, thereby provide scheme targetedly for improving the design of device performance and optimised devices.
Description of drawings
Fig. 1 is the device architecture of simulation, the indium antimonide p-n junction of doping.
The curve that Fig. 2 changes with lambda1-wavelength for photoresponse rate under the different absorber thicknesses of simulation.
When Fig. 3 was 5.5 μ m for optical wavelength, the responsiveness that the responsiveness of medium wave photodiode sample under liquid nitrogen temperature and the numerical simulation of the indium antimonide photovoltaic detector spare chip that obtains of experiment obtains was with the curve of absorber thickness variation.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated:
The device that the present invention simulated is two-dimentional p
+-on-n type indium antimonide photovoltaic detector spare, p district doping content is 10
16Cm
-3, n district doping content is 9 * 10
14Cm
-3, and at entire device outer surface passivation one deck SiO
2, p district and n district difference installing electrodes is seen Fig. 1 to measure output voltage signal simultaneously.
The p-n junction photovoltaic detector is to make p-n junction accept rayed and obtain energy.When illumination is mapped to p-n junction, knot and near semiconductor thereof absorb luminous energy, valence band electronics induced transition to conduction band forms free electron, then correspondingly forms the free hole in valence band, and these minority carriers are under the effect of p-n junction internal electric field, electronics is shifted to the n district, the p district is then shifted in the hole, and the result makes semi-conductive p district positively charged, and the n district is electronegative, make p-n junction produce photogenic voltage, and then be used for characterizing photoresponse.As shown in Figure 1, when light impinged perpendicularly on the n district, photon substantially all was absorbed in the n district, and absorbed layer is thick more, and the light of absorption is complete more, and the photo-generated carrier of generation is many more, and then photoresponse is strong more.But then, the absorption of light is also inhomogeneous, but is exponential damping with the distance of advancing, i.e. the absorption of light mainly occurs in an incipient segment distance.Absorbed layer is thick more, causes main uptake zone to increase far from the distance in interface, and photo-generated carrier is big more by compound probability in diffusion process, and then the photoresponse of Chan Shenging is more little.We can say that the photoresponse of device is vied each other by above-mentioned two kinds of mechanism just with the variation of absorber thickness and caused.When absorber thickness was thin, preceding a kind of mechanism accounted for leading, and therefore increasing photoresponse with absorber thickness increases; When absorber thickness was big, a kind of mechanism in back accounted for leading, therefore increased photoresponse with absorber thickness and reduced; There is an optimal absorption layer thickness in the middle of this.
What Fig. 2 represented is the curve that the photoresponse rate changes with lambda1-wavelength under a series of different absorber thicknesses.As can be seen from the figure, lambda1-wavelength more in short-term, responsiveness increases dullness with absorber thickness and reduces.The absorption coefficient of shortwave is big, and only very shallow distance absorbs on the surface, and this moment, second kind of mechanism accounted for leadingly, so the responsiveness dullness reduces.When lambda1-wavelength surpassed cut-off wavelength 5.5 μ m, responsiveness increased dull increasing with absorber thickness.This is that its absorption length is comparable to absorber thickness because the long wave absorption coefficient is very little, and this moment, first kind of mechanism accounted for leadingly, so responsiveness increases dull increasing with absorber thickness.In addition, the wavelength of responsiveness peak value correspondence increases with absorber thickness, the tendency of oriented long wave skew.This is because the absorption coefficient of long wave is less relatively, has stronger penetrability, and therefore the photo-generated carrier that produces is more near the interface.
Fig. 3 represents be laboratory sample under liquid nitrogen temperature responsiveness and the responsiveness of numerical simulation with the change curve of absorber thickness, wherein laboratory sample is the medium wave photodiode sample of the indium antimonide photovoltaic detector spare chip of 8 different absorber thicknesses making according to the structural parameters of numerical simulator, and incident light is chosen cut-off wavelength 5.5 μ m as incident wavelength.As can be seen from the figure, near the peak value of corresponding responsiveness, responsiveness reduces with the increase increase earlier of absorber thickness again, and maximum appears at absorber thickness and is about 13 μ m places, and analogue data and experimental data all demonstrate this feature.On the one hand, increase with absorber thickness, light absorption strengthens, and responsiveness increases; On the other hand, the thickness increase reduces the probability that is transported to the interface near the surperficial photo-generated carrier that produces.Therefore, the photoresponse rate should be these two kinds of performances that effect is vied each other, so obtain the optimal absorption layer thickness.
Claims (1)
1. a method of optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device is characterized in that comprising the steps:
1) makes up two-dimentional p
+-on-n type indium antimonide photovoltaic detector spare model, p district doping content is 10
16Cm
-3, n district doping content is 9 * 10
14Cm
-3, and at entire device outer surface passivation one deck SiO
2, p district and n district difference installing electrodes is to measure output voltage signal simultaneously;
2) make 8 medium wave photodiode samples that different n district thickness is the indium antimonide photovoltaic detector spare chip of different absorber thicknesses according to the structural parameters in the step 1, serve as the experiment measuring sample, its absorber thickness is respectively 6 μ m, 8 μ m, 10 μ m, 12 μ m, 14 μ m, 18 μ m, 25 μ m and 30 μ m;
3) performance parameter of gained sample obtains in the measuring process 2: energy gap is 0.227eV, and effective electron mass is 0.014m
0, effective hole mass m
Hp=0.43m
0, m
Lp=0.015m
0, m wherein
0Be the free electron quality, electron mobility is 10
5～10
6Cm
2/ Vs, hole mobility is 10
3～10
6Cm
2/ Vs, intrinsic carrier concentration n
i=1.513 * 10
10Cm
-3, electron diffusion coefficient D
n=226.0cm
2/ s, hole diffusion coefficient D
p=66.0cm
2/ s, the electronic carrier life-span is about 10
-10S, the holoe carrier life-span is about 10
-6S, optical absorption coefficient are 4150.0/cm, recombination-rate surface s
1=s
2=10
12Cm/s, relative dielectric constant are 16.8;
4) make up physical model: the fundamental equation of semiconductor device numerical simulation is a Poisson's equation, the continuity equation in electronics and hole, the electron transport equation, photoresponse adds equation by the charge carrier generation rate, surface recombination adds equation, comprise compound indirectly, auger recombination and radiation recombination, also to consider the thermal effect of charge carrier simultaneously, the High-Field saturation effect, with Finite Element Method discretization simultaneous iterative, the tunneling effect of potential barrier is an independent equation, find the solution from being in harmony with above-mentioned equation, in the simulation process described in the used device model such as step 1, described in used the device performance parameter such as step 3;
5) regulate physical parameter, making the simulated environment temperature is 77K, adds the incident light vertical irradiation to device measured zone n district, i.e. absorbed layer, and the luminous power perseverance is 0.0001W/cm
-2, fixedly absorber thickness is constant, changes lambda1-wavelength, the curve that is changed with lambda1-wavelength by the numerical simulation rate that meets with a response;
6) change absorber thickness, repeating step 5 obtains the curve that responsiveness changes with lambda1-wavelength under a series of different absorber thicknesses;
7) choose the peak wavelength of responsiveness curve in the step 6, promptly cut-off wavelength is 5.5 μ m, as lambda1-wavelength, changes absorber thickness, the curve that is changed with absorber thickness by the numerical simulation rate that meets with a response;
8) in experimentation, choose cut-off wavelength 5.5 μ m equally as lambda1-wavelength, the luminous power perseverance is 0.0001W/cm
-2Make the measured zone of incident light difference vertical irradiation to 8 samples described in the step 2, it is absorbed layer, adopt the response spectrum curve of fourier spectrometer NEXUS 670 measuring samples under liquid nitrogen temperature, by gathering light path background and the response device that contains background respectively, finish spectral measurement through the automatic background correction of instrument again;
9) resulting experimental data in resulting analogue data and the step 8 in the step 7 is compared, the pairing thickness of the rate that meets with a response peak value is the optimal absorption layer thickness.
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| CN103970933A (en) * | 2014-03-28 | 2014-08-06 | 中国科学院上海技术物理研究所 | Design method for optimizing infrared focal plane detector based on diffraction type micro lens |
| CN104078520B (en) * | 2014-06-27 | 2016-09-14 | 中山大学 | A kind of electron transport visible ray photodetector with narrow-band spectral response |
| CN104332527B (en) * | 2014-10-08 | 2016-08-24 | 中国电子科技集团公司第五十研究所 | A kind of method improving indium-gallium-arsenide infrared detector responsiveness and corresponding detector |
| CN105633215B (en) * | 2016-03-04 | 2017-07-28 | 中国电子科技集团公司第五十研究所 | Optimization stops the method for impurity band detector barrier layer thickness |
| CN110010758A (en) * | 2019-03-28 | 2019-07-12 | 浙江森尼克半导体有限公司 | A kind of phosphorus mixes indium stibide film, hall sensing device and preparation method thereof |
| CN110188379B (en) * | 2019-04-16 | 2023-03-24 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Method and device for optimizing thickness of absorption layer of far infrared impurity blocking band detector |
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| CN1879397A (en) * | 2003-10-13 | 2006-12-13 | 卓越设备技术公司 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
| CN101467271A (en) * | 2006-06-12 | 2009-06-24 | 3M创新有限公司 | Led device with re-emitting semiconductor construction and converging optical element |
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|---|---|---|---|---|
| CN1879397A (en) * | 2003-10-13 | 2006-12-13 | 卓越设备技术公司 | Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry |
| CN101467271A (en) * | 2006-06-12 | 2009-06-24 | 3M创新有限公司 | Led device with re-emitting semiconductor construction and converging optical element |
Non-Patent Citations (1)
| Title |
|---|
| 李献杰等.基于MOCVD技术的长波AlGaAs/GaAs量子阱红外焦平面探测器.《红外与激光工程》.2007,第36卷(第4期),第435-438页. * |
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