CN110010758A - A kind of phosphorus mixes indium stibide film, hall sensing device and preparation method thereof - Google Patents
A kind of phosphorus mixes indium stibide film, hall sensing device and preparation method thereof Download PDFInfo
- Publication number
- CN110010758A CN110010758A CN201910244225.4A CN201910244225A CN110010758A CN 110010758 A CN110010758 A CN 110010758A CN 201910244225 A CN201910244225 A CN 201910244225A CN 110010758 A CN110010758 A CN 110010758A
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- Prior art keywords
- film
- inp
- preparation
- insb
- phosphorus doping
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 title claims description 12
- 239000011574 phosphorus Substances 0.000 title claims description 12
- 229910052738 indium Inorganic materials 0.000 title claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims description 11
- 238000002360 preparation method Methods 0.000 title abstract description 15
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000012856 packing Methods 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 4
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 238000005457 optimization Methods 0.000 abstract 1
- 238000010025 steaming Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a kind of semiconductor InPxSb1‑xThe preparation method of alloy firm and its hall sensing device, wherein the value range of x optimization is 0.05≤x≤0.35.By the InPxSb1‑xWorking lining of the film as semiconductor hall sensor part, due to semiconductor InPxSb1‑xThe electron mobility of film is higher than silicon and GaAs, while can regulate and control its forbidden bandwidth close to silicon or GaAs, therefore its high sensitivity can be kept while optimizing temperature coefficient.By semiconductor InPxSb1‑xThe hall sensing device of alloy firm preparation, operating temperature are higher than indium antimonide, reach the operating temperature of silicon and GaAs, and the performances such as sensitivity, response time are better than silicon and GaAs device.Semiconductor InPxSb1‑xThe preparation method of film uses thermal evaporation techniques and suitable annealing process, and two kinds of evaporation source materials of properly mixed InP and InSb is used to add a certain amount of Sb to guarantee stoichiometric ratio.Hall device preparation is using normal components techniques such as steaming electrode, photoetching, scribing, lead and packing.
Description
Technical field
The present invention relates to a kind of semiconductor InPxSb1-xThe preparation method of film and its hall sensing device.
Background technique
With numerous frontier new technologies such as Internet of Things, artificial intelligence, robot, industry 4.0, new energy, science and techniques of defence
High speed development, semiconductor materials, chip and the light such as highly sensitive photosensitive, magnetosensitive, electricity, Magnetic Sensor are fast-developing and increase
Long market.Internet of Things is referred to as the third wave that world information industry develops after computer, internet.Sensor skill
Art is one of three key technologies in Internet of Things application, is its basis.And following smart phone, new-energy automobile, unmanned plane
Etc. the development of intelligent controls industry bigger needs also are proposed to senser element, therefore sensor industry has a high potential, Nian Fuhe
Growth rate is higher than 40%.U.S.'s " 2016-2045 science and technology trend report " proposes that sensing technology is one of important technology, together
When sensor industry meet " made in China 2025 " planning, be state key support development industry.
InSb hall sensing device is a kind of semiconductor sensor device of magnetosensitive.It is sensed in non-contacting high-precision rotary
Hall sensing device used in the new applications such as device, Weak magentic-field sensor has its sensitivity and input resistance value very high
Requirement, especially in recent years, using hall sensing device equimagnetic sensor application micron order or ultra tiny magnetism
In detection of particulates, it is desirable that hall sensing device has the detection of micro- tesla even ultra micro low-intensity magnetic field of nanotesla sensitive
Degree.By Hall relationship it is found that under certain control electric current and magnetic induction intensity, if wanting the Hall voltage of device big, suddenly
You should meet with high resistivity, low carrier concentration and high electron mobility senser element, and use film work simultaneously
The small element of sensitive layer thickness is made in skill.InSb material has as a kind of group Ⅲ-Ⅴ compound semiconductor material than general half
Much bigger electron mobility (μ=7.8 × 10 of conductor material4cm2/ Vs or higher), and the electron transfer of semiconductor silicon material
Rate is 1350cm2/ Vs or so, the electron mobility of Semiconductor GaAs material are 8700cm2/ Vs or so, indium antimonide InSb
It is the highest semiconductor material of currently known electron mobility, so having very using hall sensing device made of InSb material
High sensitivity.Furthermore InSb hall sensing device also have output voltage it is high, it is small in size, at low cost and be easy to produce in batches
Feature, therefore be widely applied in the electric power detections sensor such as electric current, voltage and electrical power.
Although InSb hall sensing device sensitivity is especially high, indium antimonide is a kind of direct low-gap semiconductor,
Forbidden bandwidth is 0.17eV at room temperature, this causes the pressure resistance of indium antimonide hall device and maximum operating temperature lower, and performance is not
Stablize.The invention patent is expected to solve this to ask using the trace alloying element doping method that regulates and controls its forbidden bandwidth
Topic improves forbidden bandwidth by alloying and guarantees higher electron mobility simultaneously.
Summary of the invention
The present invention provides a kind of InPxSb1-xThe preparation method of film and its hall sensing device, this Hall sensor
Part increases forbidden bandwidth in such a way that microelement adulterates, and optimizes its temperature coefficient, and keeps more highly sensitive
Degree.
The technical solution adopted by the present invention are as follows:
A kind of phosphorus doping indium stibide film, the film are InPxSb1-xFilm (0≤x≤1), the wherein preferred value model of x
It encloses for 0.05≤x≤0.35.
The film can be prepared as follows:
It using InSb, InP as two evaporation sources, is prepared on substrate using thermal evaporation, and annealed processing obtains, institute
InSb, InP the evaporation source purity stated are all larger than 99.9995%, and InSb, InP evaporation source are according to the value of x stoichiometrically hundred
Point than proportion, while stoichiometrically ratio add the excessive source Sb 5%~15% with make up Sb it is readily volatilized caused by loss.
The substrate is ceramics, mica, quartz, silicon or sapphire, and size of foundation base is 2~8 inch circles.
The annealing refers to: carrying out annealing 1~10 hour at a temperature of 500~680 DEG C, annealing atmosphere is
Argon gas.It is preferred that carrying out 6h annealing at 525 DEG C.
The phosphorus doping indium stibide film with a thickness of 1-4 μm.
A kind of hall sensing device, using above-mentioned phosphorus doping indium stibide film as magnetic detecting means.
The poor problem of hall sensing device temperature coefficient caused by too low that the present invention is based on InSb material forbidden bandwidths, is adopted
With above scheme, the forbidden bandwidth of InSb film is regulated and controled by the method that microelement adulterates, optimizes InSb suddenly
The temperature coefficient of your senser element, and maintain higher sensitivity.
Detailed description of the invention
Fig. 1 is InP of the present inventionxSb1-xA kind of concrete structure schematic diagram of film Hall sensor.
Wherein 1, substrate；2, layer is acted；3, electrode surrounding portion；4. connecting wire.
Fig. 2 is the evaporation schematic diagram of doping type InSb film preparation of the invention.Wherein 1, the tungsten boat of InP doped source is put；
2-4, the tungsten boat for putting InSb raw material；
Fig. 3 is the InP prepared using the method for the present inventionxSb1-xFilm.
Fig. 4 is Hall sensor signal prepared by the present invention.
Specific embodiment
The present invention is further illustrated below in conjunction with specific embodiments and the drawings.
Embodiment 1
(1) InSb source material is put into 2-4 molybdenum boat, InP is put into No. 1 tungsten boat as doped source, utilizes thermal evaporation side
Ceramic substrate and target are mounted in thermal evaporation cavity, are evacuated to 6.67 × 10 by method-4Pa opens heating, by cavity temperature
350 DEG C are heated to, substrate temperature is heated to 100 DEG C；
(2) on film thickness gauge set growing film with a thickness of 2 μm, open baffle start timing.It is closed after the completion of evaporation
Heater.
(3) film obtained is annealed 6h at 525 DEG C, its is made to complete recrystallization.
(4) hall device preparation flow are as follows: surface treatment, photoetching, etching, metal electrode preparation, scribing, lead, packing,
It tests (attached drawing 3 and 4).
Embodiment 2
(1) InSb raw material are put into 2-4 molybdenum boat, InP is put into No. 1 tungsten boat as doped source, utilizes thermal evaporation side
Ceramic substrate and target are mounted in thermal evaporation cavity, are evacuated to 6.67 × 10 by method-4Pa opens heating, by cavity temperature
350 DEG C are heated to, substrate temperature is heated to 100 DEG C；
(2) on film thickness gauge set growing film with a thickness of 3.5 μm, open baffle start timing.It is closed after the completion of evaporation
Close heater.
(3) hall device preparation flow are as follows: surface treatment, photoetching, etching, metal electrode preparation, scribing, lead, packing,
Test.
Embodiment 3
(1) InSb source material is put into 2-4 molybdenum boat, InP is put into No. 1 tungsten boat as doped source, utilizes thermal evaporation side
Ceramic substrate and target are mounted in thermal evaporation cavity, are evacuated to 6.67 × 10 by method-4Pa opens heating, by cavity temperature
350 DEG C are heated to, substrate temperature is heated to 100 DEG C；
(2) on film thickness gauge set growing film with a thickness of 3.5 μm, open baffle start timing.It is closed after the completion of evaporation
Close heater.
(3) film obtained is annealed 6h at 525 DEG C, its is made to complete recrystallization.
(4) hall device preparation flow are as follows: surface treatment, photoetching, etching, metal electrode preparation, scribing, lead, packing,
Test.
Claims (6)
1. a kind of phosphorus doping indium stibide film, which is characterized in that the film is InPxSb1-xFilm, wherein x (stoichiometry percentage
Than) value range be 0.05≤x≤0.35.
2. phosphorus doping indium stibide film according to claim 1, which is characterized in that the film is prepared with the following method:
It using InSb, InP as two evaporation sources, is prepared on substrate using thermal evaporation, and annealed processing obtains, it is described
InSb, InP evaporation source purity are all larger than 99.9995%, and InSb, InP evaporation source are stoichiometrically matched according to the value of x,
Due to the readily volatilized loss of Sb in evaporation process, so stoichiometrically percentage adds the excessive source Sb 5%~15% to make up
The loss of Sb.
3. phosphorus doping indium stibide film according to claim 1, which is characterized in that the substrate is ceramics, mica, stone
English, silicon or sapphire, size of foundation base are 2~8 inch circles.
4. phosphorus doping indium stibide film according to claim 1, which is characterized in that the annealing refers to: 500
It is carried out at a temperature of~680 DEG C annealing 1~10 hour, annealing atmosphere is argon gas.
5. phosphorus doping indium stibide film according to claim 1, which is characterized in that the phosphorus doping indium stibide film
With a thickness of 1-4 μm.
6. a kind of hall sensing device, which is characterized in that thin using phosphorus doping indium antimonide as described in any one in claim 1-5
Film is as magnetic detecting means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910244225.4A CN110010758A (en) | 2019-03-28 | 2019-03-28 | A kind of phosphorus mixes indium stibide film, hall sensing device and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910244225.4A CN110010758A (en) | 2019-03-28 | 2019-03-28 | A kind of phosphorus mixes indium stibide film, hall sensing device and preparation method thereof |
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| CN110010758A true CN110010758A (en) | 2019-07-12 |
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| CN201910244225.4A Pending CN110010758A (en) | 2019-03-28 | 2019-03-28 | A kind of phosphorus mixes indium stibide film, hall sensing device and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111864056A (en) * | 2020-07-21 | 2020-10-30 | 浙江大学 | Aluminum-doped indium antimonide film, magnetoresistive sensing element and manufacturing method thereof |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4237471A (en) * | 1979-06-22 | 1980-12-02 | Hamamatsu Corporation | Method of producing a semiconductor photodiode of indium antimonide and device thereof |
| JPH03241840A (en) * | 1990-02-20 | 1991-10-29 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US5227656A (en) * | 1990-11-06 | 1993-07-13 | Cincinnati Electronics Corporation | Electro-optical detector array |
| EP0678925A1 (en) * | 1994-04-18 | 1995-10-25 | General Motors Corporation | Magnetic field sensor |
| US6232624B1 (en) * | 1999-07-12 | 2001-05-15 | Hughes Electronics Corporation | InPSb channel HEMT on InP for RF application |
| US6630882B1 (en) * | 1999-08-05 | 2003-10-07 | Delphi Technologies, Inc. | Composite magnetic sensor |
| CN1812054A (en) * | 2004-12-01 | 2006-08-02 | 三星电子株式会社 | Dual work function metal gate structure and related method of manufacture |
| US20060246692A1 (en) * | 2003-02-26 | 2006-11-02 | Yoshihiko Shibata | Semiconductor sensor and method for manufacturing same |
| US20090001351A1 (en) * | 2005-12-27 | 2009-01-01 | Ichiro Shibasaki | Insb Thin Film Magnetic Sensor and Fabrication Method Thereof |
| CN101794839A (en) * | 2010-02-09 | 2010-08-04 | 中国科学院上海技术物理研究所 | Method for optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device |
| CN105720128A (en) * | 2016-03-04 | 2016-06-29 | 江苏森尼克电子科技有限公司 | InSb photocon and preparation method thereof |
| CN106252502A (en) * | 2016-08-23 | 2016-12-21 | 苏州矩阵光电有限公司 | A kind of Hall element and preparation method thereof |
| CN106784304A (en) * | 2016-12-07 | 2017-05-31 | 江苏森尼克电子科技有限公司 | A kind of doping type InSb films, its preparation method and InSb magnetosensitive devices |
-
2019
- 2019-03-28 CN CN201910244225.4A patent/CN110010758A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4237471A (en) * | 1979-06-22 | 1980-12-02 | Hamamatsu Corporation | Method of producing a semiconductor photodiode of indium antimonide and device thereof |
| JPH03241840A (en) * | 1990-02-20 | 1991-10-29 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| US5227656A (en) * | 1990-11-06 | 1993-07-13 | Cincinnati Electronics Corporation | Electro-optical detector array |
| EP0678925A1 (en) * | 1994-04-18 | 1995-10-25 | General Motors Corporation | Magnetic field sensor |
| US6232624B1 (en) * | 1999-07-12 | 2001-05-15 | Hughes Electronics Corporation | InPSb channel HEMT on InP for RF application |
| US6630882B1 (en) * | 1999-08-05 | 2003-10-07 | Delphi Technologies, Inc. | Composite magnetic sensor |
| US20060246692A1 (en) * | 2003-02-26 | 2006-11-02 | Yoshihiko Shibata | Semiconductor sensor and method for manufacturing same |
| CN1812054A (en) * | 2004-12-01 | 2006-08-02 | 三星电子株式会社 | Dual work function metal gate structure and related method of manufacture |
| US20090001351A1 (en) * | 2005-12-27 | 2009-01-01 | Ichiro Shibasaki | Insb Thin Film Magnetic Sensor and Fabrication Method Thereof |
| CN101794839A (en) * | 2010-02-09 | 2010-08-04 | 中国科学院上海技术物理研究所 | Method for optimizing thickness of absorbing layer of indium antimonide photovoltaic detection device |
| CN105720128A (en) * | 2016-03-04 | 2016-06-29 | 江苏森尼克电子科技有限公司 | InSb photocon and preparation method thereof |
| CN106252502A (en) * | 2016-08-23 | 2016-12-21 | 苏州矩阵光电有限公司 | A kind of Hall element and preparation method thereof |
| CN106784304A (en) * | 2016-12-07 | 2017-05-31 | 江苏森尼克电子科技有限公司 | A kind of doping type InSb films, its preparation method and InSb magnetosensitive devices |
Non-Patent Citations (2)
| Title |
|---|
| DEGHEIDY, A.R.; ELKENANY, E.B.; ALFRNWANI, O.A.: "Influence of composition, temperature and pressure on the optoelectronic", 《COMPUTATIONAL CONDENSED MATTER》 * |
| S. BACHA A, A.BECHIRI B,N, F.BENMAKHLOUF B, H.ALLOUACHE A, N.BOU: "Electronic band structure of InPxSb1-x alloys", 《PHYSICA B-CONDENSED MATTER》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111864056A (en) * | 2020-07-21 | 2020-10-30 | 浙江大学 | Aluminum-doped indium antimonide film, magnetoresistive sensing element and manufacturing method thereof |
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Application publication date: 20190712 |