CN101794727A - Distributed cancellation method of integrated circuit substrate noise and circuit - Google Patents
Distributed cancellation method of integrated circuit substrate noise and circuit Download PDFInfo
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- CN101794727A CN101794727A CN201010104730A CN201010104730A CN101794727A CN 101794727 A CN101794727 A CN 101794727A CN 201010104730 A CN201010104730 A CN 201010104730A CN 201010104730 A CN201010104730 A CN 201010104730A CN 101794727 A CN101794727 A CN 101794727A
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Abstract
The invention discloses a distributed cancellation method of integrated circuit substrate noise, comprising the following steps: acquiring noise signals generated by a digital circuit, inputting the acquired digital signals in an inverting operational amplifier for inverting amplification to obtain noise cancellation signals, injecting the noise cancellation signals at least three noise injection points on a silicon substrate in parallel, performing inverting superposition with the noise signals, and offsetting the noise signals transferring in a protective ring. The invention also discloses a circuit of the distributed cancellation method, comprising a noise detection zone on the silicon substrate, at least three noise injection points and the inverting operational amplifier, the input end of the inverting operational amplifier is connected with the noise detection zone, and the output end thereof is connected with the noise injection points. The invention can solves the problem that the decrease of an artificial circuit performance is resulted from interference of digital noise on the artificial circuit in a digital analogy mixed signal chip, and has flexible design, simple structure and high industrial application value.
Description
Technical field
The invention belongs to technical field of integrated circuits, relate in particular to a kind of method that substrate noise is offset in hybrid digital-analog integrated circuit and realize circuit.
Background technology
Along with System on Chip/SoC (SoC-System on a Chip) with analog circuit and the large scale digital system integration on same silicon substrate, the noise that digital circuit produces can the interference simulation circuit by the substrate coupling, influences the performance of analog circuit.Therefore substrate noise becomes one of subject matter that the SoC designing institute faces, and research and design are applicable to that the substrate noise cancellation technology of hybrid digital-analog integrated circuit is very important.
The method of inhibition circuit noise commonly used is at protected circuit arranged around guard ring, and guard ring can absorb the substrate couple current that is produced by many sons and few son, also corresponding reduction of noise that enters guard ring inside.On this basis, the researcher has proposed the active counteracting method of substrate noise again.This method adopts inverting amplifier; input connects the noise detection band; in order to respond to from the noise of digital circuit biography to analog circuit; output places the noise cancellation band; to output to this noise cancellation band through the anti-phase detected noise that has amplified; with originally partly to transmit the noise that comes from digital circuit superimposed, make the noise that finally is coupled to analog circuit in the guard ring obtain weakening, realize the function of noise cancellation.This active noise cancellation technology is " offsetting the band method ".
But neutralization effect is bad in the prior art, still has stronger noise to conduct to analog circuit from digital circuit.
Summary of the invention
The invention provides a kind ofly than offsetting the more efficiently active substrate noise counteracting method of band method in the prior art, and realize circuit.
A kind of distributed cancellation method of integrated circuit substrate noise; described integrated circuit comprises digital circuit and the analog circuit that is integrated on the same silicon substrate; and described analog circuit arranged around has guard ring, and the step of described noise being carried out distributed cancellation is as follows:
A) gather the noise signal that digital circuit produces;
B) noise signal input inversion operational amplifier is carried out anti-phase amplification, obtain the noise cancellation signal;
C) with at least three noise decanting points that are injected into close analog circuit on the silicon substrate of noise cancellation signal parallel, inversely add, offset the noise signal that is delivered in the guard ring with noise signal.
Available technology adopting be " noise cancellation band ", and the present invention is improved to distributed several noise decanting points with the noise cancellation band of continuous distribution, the area size at described noise decanting point place is generally micron order, and the noise decanting point forms by heavy doping.
The noise signal of gathering the digital circuit generation in the step a) can adopt noise detection band of the prior art, and the general position of arranging of noise detection band is near digital circuit, is used for responding to, gathering the noise signal that digital circuit produces.
Described noise decanting point is arranged in according to distributed frame between the guard ring of noise detection band and analog circuit, the output of the access rp-op amp by the plain conductor parallel connection.
The number of noise decanting point, position are determined according to the size of protected circuit (analog circuit), obtain best number and position by emulation in the practice.
Described guard ring is generally square, can be a guard ring, also can be a plurality of guard rings, and size is decided according to the area of protected analog IC circuit in the ring.The noise decanting point can be arranged in a linear.Parallel with guard ring near the side of digital circuit.
The present invention also provides a kind of circuit of realizing described distributed cancellation method, comprising:
The noise detection band is arranged near the digital circuit as inductor, is used to gather the noise signal that digital circuit produces;
At least three noise decanting points;
Rp-op amp, its input is connected with the noise detection band, the output of rp-op amp is connected with described noise decanting point, rp-op amp is used for the anti-phase amplification of noise signal that the noise detection band is sensed, form the noise cancellation signal, inject silicon substrate through the noise decanting point with the form of point, inversely add, realize the active counteracting of substrate noise with the noise of coming by the silicon substrate coupling.
Described noise detection band is positioned at the side near digital circuit coupling substrate noise source, is used to respond to the substrate noise signal.Its length is decided according to the size of digital circuit part, and requirement can sample the noise that digital circuit transmits fully.Its width can be several micrometer ranges.In P type substrate, can form the noise detection band with heavily doped P+ district.In N type substrate, can form the noise detection band with heavily doped N+ district.
Described noise decanting point is between the guard ring of noise detection band and analog circuit.Decide according to the size of protected circuit the optimum number of decanting point, position.Each anti-phase noise decanting point can be arranged in a straight line, and that limit of the most close digital circuit is parallel with guard ring.In P type substrate, adopt heavy doping P+ district as distributed anti-phase noise decanting point.In N type substrate, adopt heavy doping N+ district as distributed anti-phase noise decanting point.Each distributed anti-phase noise decanting point connects together by conductors such as metals.
Rp-op amp, its input connects the noise detection band, and its output connects distributed anti-phase noise decanting point, and its optimum gain is adjusted according to the size of relation of the position between noise detection band, distributed decanting point and the guard ring and guard ring.
Emulation and proof in kind, distributed substrate noise bucking circuit of the present invention can better overcome the analog circuit performance decrease that digital noise causes crosstalking of analog circuit in the digital-to-analogue mixed signal chip.The distributed substrate noise bucking circuit of the present invention comprises noise detection band, distributed noise decanting point and rp-op amp.Rp-op amp carries out anti-phase amplification to the noise signal that detects, and injects back substrate by distributed noise decanting point, offsets with former noise signal stack, realizes slackening the purpose of substrate coupled noise.At the protected circuit of different size, can design corresponding best distribution decanting point structure, flexible design, simple in structure, have than traditional better noise cancellation effect of noise cancellation band.The present invention has realized preferable noise cancelling capabilities with simple circuit configuration, the noise cancellation effect that adopts less integrated circuit chip area just can realize ideal, and distributed substrate noise bucking circuit of the present invention has very high industrial application value.
Description of drawings
Fig. 1 is the schematic perspective view of the distributed substrate noise bucking circuit of the present invention;
Fig. 2 is the domain schematic diagram that has distributed substrate noise bucking circuit of the present invention;
The test result of Fig. 3 for each test point among Fig. 2 is tested;
Fig. 4 is the domain schematic diagram of the noise cancellation circuit of second kind of the present invention and the third execution mode;
The test result of Fig. 5 a for second kind of execution mode of the present invention tested;
The test result of Fig. 5 b for the third execution mode of the present invention is tested;
Fig. 6 is to the 4th kind of test result that execution mode is tested of the present invention.
Embodiment
Embodiment 1
Embodiments of the invention are 3 distributed substrate noise bucking circuits, and its overall structure as shown in Figure 1.Because passive guard ring structure is widely used, the present invention is in conjunction with existing guard ring 130 structures, to obtain better noise removing effect.Silicon substrate 100 is of a size of 1800um * 1000nm (long * wide), and noise produces the digital circuit noise source of point 110 for simplification, is positioned on silicon substrate 100 central shafts range noise surveying tape 500um.Noise detection band 120 long 400um.122 one-tenth central shafts of three distributed noise decanting points on same straight line are symmetrically distributed, and span is 800um, and 123 pairs three distributed noise decanting points 122 of bonding jumper are done conduction and connected.Guard ring 130 is of a size of 400um * 400um, is connected by earth terminal 150 ground connection.Oppositely the input of operational amplifier 121 is connected with noise detection band 120, and output and 3 noise decanting points 122 are linked to each other by metal wire.
Fig. 2 is the layout design of the distributed substrate noise bucking circuit of the embodiment of the invention.The 0.18um standard CMOS process of P type substrate is adopted in this design.The noise that digital circuit produces adopts the outside method of injecting in the body to form, and it is that a length of side is that the square P+ district of 10um produces 110 with external noise by noise and is injected into P type substrate that noise produces point 110.The noise detection bandwidth is 4um, and three distributed noise decanting points 122 are the square of 4um for the length of side.Oppositely operational amplifier 121 adopts external voltage type amplifier (also can be made on the silicon chip), is subjected to the power that coupled noise disturbs by 16 test points 140 (P1-P16) test simulation circuit in the guard ring 130.During physical varification, with a 3.6V, the square-wave signal of 5kHz produces point 110 by equivalent external noise and is injected into substrate, correspondingly the noise amplitude on test and the record protection ring build-in test dot matrix.And in existing counteracting mode based on " offset band " formula as the reference object.Bucking circuit based on " offsetting band " designs except three among Fig. 2 distributed noise decanting points are become the noise cancellation band of long 800um, wide 4um, and other structure is identical.Both test results as shown in Figure 3.Can be got by Fig. 3, it is more more effective than using the noise cancellation band to use distributed noise decanting point scheme, and noise amplitude has descended nearly 75%.
Embodiment 2
Another embodiment of the present invention:, above-mentioned distributed I C substrate noise bucking circuit is applied to realize a kind of distributed substrate noise bucking circuit in the design of digital-to-analogue hybrid chip execution mode as shown in Figure 4 in order further to verify advance of the present invention.This embodiment still adopts the reverse operational amplifier 121 of external voltage type (also can be made on the silicon chip), and protected analog circuit is with 160 representatives of amplifier IC circuit, by testing the evaluate parameter that its signal to noise ratio snr is used as the substrate noise bucking circuit.Noise generation point 110a is positioned at the position, axis with respect to guard ring.Produce the square-wave signal that some 110a injects 5V, a 100kHz from noise, in order to the noise of representing numeric area to produce.The sinusoidal small-signal of a 10kHz-100kHz is provided for guard ring 130 interior amplifier IC circuit 160 inputs.Equally, in order to compare with the charged road of existing counteracting, designed the noise cancellation circuit based on the noise cancellation band in experiment, this circuit is except replacing distributed anti-phase noise decanting point with the noise cancellation band, and all the other structures are identical.Obtain three groups of test results in this experiment shown in Fig. 5 a, comprising: noiseless bucking circuit, counteracting band noise cancellation circuit and distributed noise cancellation circuit.Can see that by test result distributed substrate noise bucking circuit has best implementation result.
Embodiment 3
Because in the actual Digital Analog Hybrid Circuits; the position of noise source is indefinite; so the present embodiment produces the marginal position that some 110b is arranged on guard ring to noise; other structures are identical with embodiment 2; the square-wave signal of 5V, a 100kHz is injected into noise produces some 110b, other step is identical with embodiment 2.The test result that obtains comprises three groups of test results shown in Fig. 5 b: noiseless bucking circuit, counteracting band noise cancellation circuit and distributed noise cancellation circuit.Can see that by test result distributed substrate noise bucking circuit has best implementation result.
Comparison diagram 5a and 5b can get, no matter be that noise produces some 110a or noise produces some 110b, distributed substrate noise bucking circuit has proved that than offsetting band noise cancellation circuit better effects if noise of the present invention produces point good noise cancellation effect is still all arranged at the edge at the center.
Embodiment 4
In addition, experiment proves also under several below situations that distributed noise cancellation circuit all has better effect than offsetting band noise cancellation circuit: the guard ring size changes; The distance of noise detection band and guard ring changes; Chip size changes.In order to estimate noise situations, select ANTF (Average NoiseTransfer Function, average noise transfer function, that is spread all over the mean value of the whole test point noises in the guard ring 130) as evaluate parameter.When silicon substrate 100 is 1500um * 1100um (long * wide), when the distance between noise detection band 120 and the guard ring 130 is 100um, can find that the number of best distribution formula noise decanting point 122 is 13.The situation that this moment, ANTF changed with guard ring 130 width W as shown in Figure 6, wherein: the noise detection strip length is 1000um, the span of distributed noise decanting point 122 also is 1000um.When increasing substrate length, both contrast effects are still similar.Verified that further the present invention has bigger exploitativeness and using value.
Adopt the method for distributed substrate noise bucking circuit of the present invention, better suppressed the coupling of substrate noise, reduce the influence of substrate noise protected analog IC circuit by the anti-phase noise cancellation signal of distributed injection.With respect to existing active noise cancellation circuit; the distributed substrate noise of the present invention is offset the better effects if of mode; and at the guard ring of different size and structure, distributed decanting point structure that can designing optimal is eliminated the substrate coupled noise to the full extent to the analog circuit Effect on Performance.The distributed substrate noise bucking circuit of the present invention's design is simple in structure, only need a noise cancellation band, a rp-op amp and distributed decanting point just can realize the function of noise removing, save the area of chip layout, helped reducing cost, had higher utility.
Claims (5)
1. the distributed cancellation method of an integrated circuit substrate noise; described integrated circuit comprises digital circuit and the analog circuit that is integrated on the same silicon substrate; and described analog circuit arranged around has guard ring, it is characterized in that, the step of described noise being carried out distributed cancellation is as follows:
A) gather the noise signal that digital circuit produces;
B) noise signal input inversion operational amplifier is carried out anti-phase amplification, obtain the noise cancellation signal;
C) with at least three noise decanting points that are injected into close analog circuit on the silicon substrate of noise cancellation signal parallel, inversely add, offset the noise signal that is delivered in the guard ring with noise signal.
2. distributed cancellation method as claimed in claim 1 is characterized in that, described noise decanting point forms by heavy doping.
3. the distributed cancellation circuit of an integrated circuit substrate noise is characterized in that, comprises
Be arranged on the noise detection band on the silicon substrate, be used to gather the noise signal that the digital circuit on the silicon substrate produces;
Be arranged at least three noise decanting points on the silicon substrate;
Rp-op amp, its input is connected with the noise detection band, and the output of rp-op amp is connected with described noise decanting point.
4. distributed cancellation circuit as claimed in claim 3 is characterized in that, described noise detection band is positioned at the side near digital circuit coupling substrate noise source.
5. distributed cancellation circuit as claimed in claim 3; it is characterized in that; described integrated circuit comprises digital circuit and the analog circuit that is integrated on the same silicon substrate; and described analog circuit arranged around has guard ring; described noise decanting point is between the guard ring of noise detection band and analog circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101047308A CN101794727B (en) | 2010-01-29 | 2010-01-29 | Distributed cancellation method of integrated circuit substrate noise and circuit |
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| CN2010101047308A CN101794727B (en) | 2010-01-29 | 2010-01-29 | Distributed cancellation method of integrated circuit substrate noise and circuit |
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| CN101794727A true CN101794727A (en) | 2010-08-04 |
| CN101794727B CN101794727B (en) | 2012-05-30 |
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| CN2010101047308A Expired - Fee Related CN101794727B (en) | 2010-01-29 | 2010-01-29 | Distributed cancellation method of integrated circuit substrate noise and circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496620A (en) * | 2011-12-30 | 2012-06-13 | 上海集成电路研发中心有限公司 | Semiconductor chip with integration of voltage controlled oscillator and manufacture method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5969562A (en) * | 1997-10-30 | 1999-10-19 | Alesis Studio Electronics, Inc. | Low noise method for interconnecting analog and digital integrated circuits |
| JP2001339254A (en) * | 2000-05-25 | 2001-12-07 | Hioki Ee Corp | Common-mode noise reduction method for input-output insulation type equipment |
| JP2005294888A (en) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | Signal processing circuit |
| US7511346B2 (en) * | 2005-12-27 | 2009-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Design of high-frequency substrate noise isolation in BiCMOS technology |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496620A (en) * | 2011-12-30 | 2012-06-13 | 上海集成电路研发中心有限公司 | Semiconductor chip with integration of voltage controlled oscillator and manufacture method thereof |
| CN102496620B (en) * | 2011-12-30 | 2016-04-06 | 上海集成电路研发中心有限公司 | The semiconductor chip of Integrated VCO and manufacture method thereof |
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| CN101794727B (en) | 2012-05-30 |
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Inventor after: Liang Guo Inventor after: Han Yan Inventor after: Liu Xiaopeng Inventor after: Guo Qing Inventor before: Liang Guo Inventor before: Liu Xiaopeng Inventor before: Guo Qing |
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Free format text: CORRECT: INVENTOR; FROM: LIANG GUO LIU XIAOPENG GUO QING TO: LIANG GUO HAN YAN LIU XIAOPENG GUO QING |
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Granted publication date: 20120530 Termination date: 20140129 |