CN101772252B - Plasma excitation power supply - Google Patents
Plasma excitation power supply Download PDFInfo
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- CN101772252B CN101772252B CN 200810224784 CN200810224784A CN101772252B CN 101772252 B CN101772252 B CN 101772252B CN 200810224784 CN200810224784 CN 200810224784 CN 200810224784 A CN200810224784 A CN 200810224784A CN 101772252 B CN101772252 B CN 101772252B
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Abstract
The invention discloses a plasma excitation power supply, which comprises a primary rectifying and filtering circuit, a primary high frequency inverting circuit, a primary amplifying circuit, a secondary rectifying and filtering circuit, a secondary high frequency inverting circuit, a single chip control circuit, a secondary amplifying circuit, a last rectifying and filtering circuit, a current-limiting reflux device and a pulse output circuit. The power source adopts dual-stage high frequency inverting and amplifying technology to generate output of high voltage wide pulse, thus having automatic constant voltage function. Another inversion is carried out on the rectified voltage after primary amplification, and pulse chopping is carried out during inversion. Pulse type high frequency voltage is subject to secondary amplification followed by rectification and filtration to form needed high voltage square wave. The pulse signal is controlled by the single chip, and the generated pulse signal has high preciseness, stable performance and convenient operation.
Description
Technical field
The present invention relates to low temperature high density plasma generation technology, particularly a kind of plasma excitation power supply.
Background technology
The specification requirement of low temperature high density plasma generation has stable high voltage broad pulse output, requires its pulse voltage need reach more than the 5000V, and electric current need reach more than 10 amperes.And in a pulse width range, can keep the amplitude of the fluctuation of voltage＜5%.
Traditional pulse power carries out after the transformation again rectifying and wave-filtering to the alternating voltage of input as shown in Figure 1, afterwards direct voltage is carried out copped wave, production burst voltage.
Under the requirement of high-density plasma discharge, it is just high especially that used element requirement is controlled in copped wave.The IGBT pipe that picture is commonly used, voltage endurance capability is at 1200V mostly, and can withstand voltage 3000V have just belonged to is very high-end, above then more rare and expensive of 5000V.In addition, when carrying out pulse chopping, all baffle can be installed, be used for absorbing the reflected voltage energy of copped wave process generation with protection prime element.When high pressure was carried out copped wave, the voltage that may be reflected back was also just very high.The elements such as the electric capacity that therefore will use for baffle and resistance also just propose corresponding high voltage requirement, simultaneously in the technology realization, all have great difficulty in the configuration of element.In addition, because be just to have exported after the copped wave, without any quarantine measures, the unsteadiness that plasma discharge exists just is easy to the copped wave element is damaged, and has influence on the useful life of power supply.
Fig. 2 is the modified model that developed afterwards, and this method has been carried out the secondary amplification to voltage.The first order is to carry out carrying out inversion behind the rectifying and wave-filtering exchanging input again, then is amplified to an intermediate voltage.Carry out again afterwards rectifying and wave-filtering, and carry out DC chopped-wave, change into the dc pulse voltage of an intermediate voltage.It is a pulse amplifier that secondary amplifies, and the dc pulse signal of low pressure is amplified to desired voltage range through secondary.
But the pulse signal that the DC pulse amplifier produces can be at pulse starting and ending position distorted.In the situation that this high pressure, distortion can be more obvious.And plasma discharge in certain scope the time electric current can be progression with voltage and change, so can be very responsive to this voltage distortion.Existing technology can be improved impulse waveform by carrying out the multiple filter correction again, but the parameter of plasma excitation moment changes and can again cause interference again to this, make revise ineffective.And the spark-over that plasma discharge process unsteadiness may cause also easily injures the important devices in the power supply.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of plasma excitation power supply.This power supply has adopted twin-stage high-frequency inversion amplifying technique for producing the output of high voltage broad pulse, has the automatic constant-pressure function.Pulse signal is by Single-chip Controlling, and the pulse signal precision of its generation is high, and stable performance is easy to operate.This power supply carries out an inversion again to rectified voltage after one-level is amplified, and it is carried out pulse chopping when inversion.The high frequency voltage of impulse type rectifying and wave-filtering and form required high-voltage square-wave again after secondary amplifies.
In order to achieve the above object, a kind of plasma excitation power supply provided by the invention comprises:
One elementary current rectifying and wave filtering circuit is used for the three-phase alternating current signal of telecommunication of input is converted to the first dc signal.
One elementary high-frequency inverter circuit is used for the first dc signal is converted to the unidirectional high-frequency ac signal of telecommunication.
One one-level amplifying circuit is used for the unidirectional high-frequency ac signal of telecommunication is amplified.
One secondary current rectifying and wave filtering circuit, the unidirectional high-frequency ac signal of telecommunication after being used for amplifying is converted to the second dc signal.
One secondary high-frequency inverter circuit is used for the second dc signal is converted to the pulse ac signal of telecommunication.
One single chip machine controlling circuit links to each other with the secondary high-frequency inverter circuit, is used for control secondary high-frequency inverter circuit the second dc signal is converted to the pulse ac signal of telecommunication.
One second amplifying circuit is used for the pulse ac signal of telecommunication is amplified.
One final stage current rectifying and wave filtering circuit, the ac signal after being used for amplifying is converted to dc pulse signal.
One impulse output circuit is used for dc pulse signal is exported.
Wherein, a current limliting reflux is installed between final stage current rectifying and wave filtering circuit and impulse output circuit, is used for dc pulse signal is carried out current-limiting protection, described current limliting reflux is connected with current-limiting resistance by backflow resistance and is consisted of.
Wherein, when the backflow resistance of described current limliting reflux is normal plasma discharge 1～2.5 times of equivalent resistance, optimal value is 1.5 times.
Wherein, when the current-limiting resistance resistance of described current limliting reflux is normal plasma discharge 0.1～0.2 times of equivalent resistance, optimal value is 0.14 times.
The invention has the advantages that:
1, adopt twin-stage to amplify.First order amplification is amplified to 700V-800V to the alternating voltage of standard, and the second level realizes being amplified to more than the 5000V again.The high voltage of the large electric current of low-pressure end and output has just obtained buffering like this, all decreases for the coiling of transformer and the requirement of heat dissipation design.And two transformers that the twin-stage amplification is used are isolated input, control procedure and output ground.The echo that pulse chopping may be caused can not damage the primary control circuit, and the plasma discharge process may occur unstablely also is not easy to damage pulse control circuit.Job stability and the useful life of power supply like this, have greatly been increased.
2, adopted the AC chopping mode.One-level is amplified and rectifying and wave-filtering generates direct current, carries out pulse chopping when being reverse into interchange.This process, the effect of single-chip microcomputer be the control inverter circuit the work of full-bridge control board whether.The energy that inverter circuit work is then inputted can be transferred to next stage by transformer, and not working then is direct voltage, and energy can't be transferred to next stage.As long as so single-chip microcomputer is kept the work of full-bridge control board and idle repetition rate meets the demands, and need not ask too much the perfection of single-chip microcomputer self waveform and the time of delay of switch element.Simultaneously, because the voltage of intergrade is not very high (700V-800V), so the requirement of paired pulses control circuit is also lower, the IGBT of general 1200V pipe just has been sufficient for sb.'s need.
3, used the high-frequency inversion technology.Low-frequency voltage easily carried out ohmic heating consumption at coil when traditional low frequency inverter voltage was carried out transformation, so the efficient of conversion is lower.The volume energy that increases transformer is raised the efficiency, but for the high-power transformation more than the 10kW, exigent transformation efficient so the volume of transformer can be very large, and needs the specialized designs cooling device.High-frequency inversion can improve the conversion efficiency of transformer greatly, makes the design of high-power transformer simpler, and cost of manufacture is also much lower.Simultaneously, realizing carrying out after the pulse chopping frequency that the output of voltage amplification and rectifying and wave-filtering then exchanges should be much larger than pulse frequency (100Hz～1000Hz) again, and a pulsewidth will have the abundant voltage repetition period in the time, and high-frequency inversion (＞10kHz) make this become possibility.
4, current limliting backflow resistance has been installed: when the resistance of the high-power non-inductive resistance of output series connection is about normal plasma discharge 0.14 times of equivalent resistance.During regular picture, resistance does not play much effects, in case the moment sparkover occurs, the equivalent resistance of plasma is near 0, and at this moment resistance just plays the effect of current limliting, has both protected power supply, also makes sparking electrode be difficult for being compromised.Same because the particularity of plasma discharge, when voltage low to certain the time discharge can't carry out, the equivalent resistance of plasma is infinity mutually, thereby can't discharge power supply energy fully before shutdown, backflow resistance in parallel can address this problem.In work, backflow resistance is being kept circuit minimum current, effectively keeps plasma and punctures the stable of front and back voltage.
Description of drawings
Fig. 1 is the circuit frame figure of traditional pulse power;
Fig. 2 is the circuit frame figure of traditional modified model power supply;
Fig. 3 is plasma excitation power supply circuit frame figure of the present invention;
Fig. 4 is that specific embodiment of the invention DC pulse realizes partial circuit figure;
Fig. 5 is specific embodiment of the invention current limliting reflux circuit diagram.
Embodiment
Below in conjunction with specific embodiment the present invention is described in detail.
Embodiment 1
As shown in Figure 3, plasma excitation power supply circuit comprises: elementary current rectifying and wave filtering circuit, elementary high-frequency inverter circuit, one-level amplifying circuit, secondary current rectifying and wave filtering circuit, secondary high-frequency inverter circuit, single chip machine controlling circuit, second amplifying circuit, final stage current rectifying and wave filtering circuit, current limliting reflux and impulse output circuit.
The specific works flow process is as follows:
1, elementary rectifying and wave-filtering: current rectifying and wave filtering circuit 1 connects LC filtering by a MDS100A/1200V three-phase bridge commutating module and forms.380 volts of three-phase alternating current inputs of standard are through becoming approximately 510 volts direct current output behind the current rectifying and wave filtering circuit 1.
2, elementary high-frequency inversion: high-frequency inverter circuit 2 is made of with a master control borad the IGBT pipe of four bridge joints.Become unidirectional high-frequency ac output via 1 direct current that generates after by high-frequency inverter circuit 2.
3, one-level voltage amplification: amplifying circuit 3 is 20KW, the transformer of 537:850, and its high-frequency alternating current that generates previously carries out elementary amplification, and input voltage is amplified to approximately 800 volts.
4, secondary rectifying and wave-filtering: current rectifying and wave filtering circuit 4 is to carry out bridge-type by four groups of high-power diodes to connect, and connects then that LC filtering forms.Again changed into direct current at this high-frequency alternating current that amplifies through one-level.
5, secondary high-frequency inversion: the high-frequency inverter circuit 5 that IGBT manages and a master control borad consists of by four bridge joints changes into pulse ac output at the direct current of lower input of the control of single-chip microcomputer 8.
6, secondary voltage amplifies: amplifying circuit 6 is 20KW, the transformer of 700:6000, and it carries out level amplification at end to the pulse ac electricity of 5 outputs, and voltage is amplified to required value.
7, final stage rectifying and wave-filtering: the alternating current of pulse input becomes final required DC pulse output via current rectifying and wave filtering circuit 7, as shown in Figure 4.
8, current limliting refluxes: current-limiting protection device 9 is comprised of one group of high-power non-inductive resistance.If there is the moment sparkover, its equivalent resistance is zero during plasma discharge, and at this moment current-limiting resistance works, and makes power output end be unlikely to short circuit.And when turning down voltage to certain value, plasma cognition stops discharge, the resistance approach infinity, and the resistance that at this moment refluxes just can discharge the residual energy of power supply.
A preferred plasma excitation power supply circuit as above-described embodiment 1, as shown in Figure 3, comprising: elementary current rectifying and wave filtering circuit, elementary high-frequency inverter circuit, one-level amplifying circuit, secondary current rectifying and wave filtering circuit, secondary high-frequency inverter circuit, single chip machine controlling circuit, second amplifying circuit, final stage current rectifying and wave filtering circuit, current limliting reflux and impulse output circuit.Wherein, the current limliting reflux is connected with current-limiting resistance by backflow resistance and is consisted of, as shown in Figure 5, when the resistance of backflow resistance 1 is normal plasma discharge 1.5 of equivalent resistance times, when the resistance of current-limiting resistance 2 is normal plasma discharge 0.14 of equivalent resistance times.
The resistance of output is 1.64 times of plasma equivalent resistance before plasma punctures, and after plasma punctured, the resistance of output was 0.74 times of plasma equivalent resistance.The curent change of circuit only had about 2 times before and after plasma punctured, rather than became suddenly large by 0, so just is not easy to produce new current oscillation front utmost point filter is impacted.When shutdown, voltage is turned down by height, (is about 800V) when being low to moderate certain value, and plasma can not be breakdown again, be equivalent to open circuit.At this moment, the energy of low pressure can discharge by backflow resistance, to shorten the waiting time of shutting down, increases the life-span of power supply.
Plasma excitation power supply is in design, and the 5-6 when its maximum current that can pass through is approximately plasma work doubly.If unexpected flashing punch-through in the plasma discharge process, plasma also just is equivalent to dash as load so.This moment, the resistance of output only had the effect of current-limiting resistance, and resistance is 0.14 times of plasma equivalent resistance, so electric current also only increases to 5.3 times of (0.74/0.14) ≈ in when normal operation, in the maximum current scope that power supply can bear.Therefore can not cause the overcurrent injury to power supply.
Claims (7)
1. plasma excitation power supply comprises:
One elementary current rectifying and wave filtering circuit is used for the three-phase alternating current signal of telecommunication of input is converted to the first dc signal;
One elementary high-frequency inverter circuit is used for the first dc signal is converted to the single-phase high frequency ac signal;
One one-level amplifying circuit is used for the single-phase high frequency ac signal is amplified;
One secondary current rectifying and wave filtering circuit, the single-phase high frequency ac signal after being used for amplifying is converted to the second dc signal;
It is characterized in that, also comprise:
One secondary high-frequency inverter circuit is used for the second dc signal is converted to the pulse ac signal of telecommunication;
One single chip machine controlling circuit links to each other with the secondary high-frequency inverter circuit, is used for control secondary high-frequency inverter circuit the second dc signal is converted to the pulse ac signal of telecommunication;
One second amplifying circuit is used for the pulse ac signal of telecommunication is amplified;
One final stage current rectifying and wave filtering circuit, the ac signal after being used for amplifying is converted to dc pulse signal;
One impulse output circuit is used for dc pulse signal is exported.
2. plasma excitation power supply according to claim 1 is characterized in that, a current limliting reflux is installed between final stage current rectifying and wave filtering circuit and impulse output circuit, is used for dc pulse signal is carried out current-limiting protection.
3. plasma excitation power supply according to claim 2 is characterized in that, described current limliting reflux is connected with current-limiting resistance by backflow resistance and consisted of.
4. plasma excitation power supply according to claim 3 is characterized in that, when the resistance of backflow resistance is normal plasma discharge in the described current limliting reflux 1～2.5 times of equivalent resistance.
5. plasma excitation power supply according to claim 4 is characterized in that, when the resistance of backflow resistance is normal plasma discharge in the described current limliting reflux 1.5 times of equivalent resistance.
6. plasma excitation power supply according to claim 3 is characterized in that, when the resistance of current-limiting resistance is normal plasma discharge in the described current limliting reflux 0.1～0.2 times of equivalent resistance.
7. plasma excitation power supply according to claim 6 is characterized in that, when the resistance of current-limiting resistance is normal plasma discharge in the described current limliting reflux 0.14 times of equivalent resistance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810224784 CN101772252B (en) | 2008-12-26 | 2008-12-26 | Plasma excitation power supply |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200810224784 CN101772252B (en) | 2008-12-26 | 2008-12-26 | Plasma excitation power supply |
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| CN101772252A CN101772252A (en) | 2010-07-07 |
| CN101772252B true CN101772252B (en) | 2013-02-13 |
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| CN 200810224784 Expired - Fee Related CN101772252B (en) | 2008-12-26 | 2008-12-26 | Plasma excitation power supply |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103872941B (en) * | 2014-04-02 | 2017-01-18 | 吉林大学 | High-voltage pulse power supply |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1762087A (en) * | 2003-03-21 | 2006-04-19 | 许廷格电子有限及两合公司 | Power supply unit for gas discharge processes |
| CN201336768Y (en) * | 2008-12-19 | 2009-10-28 | 中国科学院空间科学与应用研究中心 | High-voltage wide-pulse plasma sheet excitation power source |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1762087A (en) * | 2003-03-21 | 2006-04-19 | 许廷格电子有限及两合公司 | Power supply unit for gas discharge processes |
| CN201336768Y (en) * | 2008-12-19 | 2009-10-28 | 中国科学院空间科学与应用研究中心 | High-voltage wide-pulse plasma sheet excitation power source |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2008-167584A 2008.07.17 |
| JP特开平7-114999A 1995.05.02 |
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| CN101772252A (en) | 2010-07-07 |
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