CN101770091A - Mask plate and manufacturing method thereof - Google Patents
Mask plate and manufacturing method thereof Download PDFInfo
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- CN101770091A CN101770091A CN200810247423A CN200810247423A CN101770091A CN 101770091 A CN101770091 A CN 101770091A CN 200810247423 A CN200810247423 A CN 200810247423A CN 200810247423 A CN200810247423 A CN 200810247423A CN 101770091 A CN101770091 A CN 101770091A
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Abstract
The invention relates to a mask plate and a manufacturing method thereof. The mask plate comprises an upper base plate, a first transparent conductive bar wire, a first transparent insulating film, a lower base plate, a second transparent conductive bar wire and a second transparent insulating film, wherein the first transparent conductive bar wire is positioned on the upper base plate and arranged towards a first direction; the first transparent insulating film is positioned above the first transparent conductive bar wire and covers the upper base plate; the second transparent conductive bar wire is positioned on the lower base plate and arranged towards a second direction; the second direction is vertical to the first direction; the second transparent insulating film is positioned above the second transparent conductive bar wire and covers the lower base plate; and liquid crystal is clamped between the upper base plate and the lower base plate. In the mask plate, a vertical electric field and a transmission region and a non-transmission region are formed through the first and second conductive bar wires so as to overcome the defect that a plurality of mask plates are needed in the conventional manufacturing process.
Description
Technical field
The present invention relates to a kind of mask and manufacture method thereof.
Background technology
Microelectric technique is along with integrated circuit, especially ultra-large type scale integrated circuit and a new technology growing up.A series of special technology such as microelectric technique comprises circuit system design, patterning thin film method, material preparation, tests automatically and encapsulate, assembling.Along with the development of microelectric technique, its application progressively expands the manufacture process of some other precision equipment to, as liquid crystal indicator etc.
The patterning thin film method is applied in the preparation process of liquid crystal indicator (Liquid Crystal Display abbreviates LCD as) panel usually, and mask (mask) is an important materials in the liquid crystal indicator panel manufacture process.Make the arts demand one cover mask of an array base palte (array substrate) or color membrane substrates (color filtersubstrate).The patterning thin film method specifically comprises: deposit layer of material on substrate, on described material, be coated with photoresist, under the coverage of mask, described photoresist is exposed, the photoresist that removal is exposed and exposing is positioned at the described material below the photoresist, the material that exposes is carried out etching, at last residual photoresist is removed, thereby finished patterning thin film one time.Also need to change continually mask when product development or technological development, forming required circuit pattern, and mask costs an arm and a leg, and makes production cost and cost of development very high.In addition, owing to need to change mask, therefore when carrying mask and storage mask, can cause because of increasing the increase of the clean room demand that equipment volume causes, and also increase the rising of the equipment failure rate that causes, and reduced production efficiency owing to need to change mask owing to processing step.
Summary of the invention
The purpose of this invention is to provide a kind of mask and manufacture method thereof, with production cost and the high defective of cost of development that overcomes mask in the prior art.
For achieving the above object, the invention provides a kind of mask, comprising: upper substrate; The first electrically conducting transparent winding displacement is positioned at described upper substrate and arranges towards first direction; First transparent insulating film is positioned at described first electrically conducting transparent winding displacement top and covers described upper substrate; Infrabasal plate; The second electrically conducting transparent winding displacement is positioned at described infrabasal plate and towards the second direction arrangement, described second direction is perpendicular to described first direction; Second transparent insulating film is positioned at described second electrically conducting transparent winding displacement top and covers described infrabasal plate; Accompany liquid crystal between described upper substrate and the described infrabasal plate.
Wherein, the live width of the described first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is 0.05 μ m～0.35 μ m.
Wherein, a side of the described first electrically conducting transparent winding displacement is provided with first peripheral circuit, and a side of the described second electrically conducting transparent winding displacement is provided with second peripheral circuit.
Wherein, be provided with chock insulator matter between described upper substrate and the described infrabasal plate.
Wherein, described upper substrate and described infrabasal plate are respectively equipped with alignment films, and the direction of orientation of two alignment films is vertical mutually, and described liquid crystal is the cholesteric liquid crystal that chirality agent and nematic liquid crystal mix, and wherein said chirality agent has with the temperature characteristic that helically twisted power reduces that raises.
Wherein, described upper substrate and described infrabasal plate are respectively equipped with alignment films, and the orientation probability of all directions is even on each alignment films, and described liquid crystal is the cholesteric liquid crystal of polymer stabilizing or is pure nematic liquid crystal.
For achieving the above object, the present invention also provides a kind of manufacture method of mask, comprising: on upper substrate, form the first electrically conducting transparent winding displacement towards first direction; Formed and formed first transparent insulating film on the described upper substrate of the described first electrically conducting transparent winding displacement, made described first transparent insulating film cover described upper substrate; On infrabasal plate, form the second electrically conducting transparent winding displacement towards second direction, described second direction is perpendicular to described first direction; Formed and formed second transparent insulating film on the described infrabasal plate of the described second electrically conducting transparent winding displacement, made described second transparent insulating film cover described infrabasal plate; Involutory described upper substrate and described infrabasal plate, and inject liquid crystal.
Wherein, formed the described upper substrate of first transparent insulating film and formed on the described infrabasal plate of second transparent insulating film and formed alignment films respectively, and described alignment films has been rubbed.
Wherein, formed on the described upper substrate of first transparent insulating film and formed chock insulator matter.
Wherein, formed on the described infrabasal plate of second transparent insulating film and formed chock insulator matter.
Wherein, described involutory described upper substrate and described infrabasal plate, and the injection liquid crystal is specially: involutory described upper substrate of elder generation and described infrabasal plate, liquid crystal is injected in the back; Perhaps inject liquid crystal, involutory described upper substrate in back and described infrabasal plate earlier.
Mask of the present invention, form vertical electric field by the second electrically conducting transparent winding displacement that is positioned at the first electrically conducting transparent winding displacement on the upper substrate and be positioned on the infrabasal plate, and the liquid crystal of arranging between upper substrate and infrabasal plate by this vertical electric field forms regional transmission and non-regional transmission to change transmitance.Thereby with having overcome the defective that needs a plurality of mask in the existing manufacturing process, thereby reduced the manufacturing cost of liquid crystal indicator by the mode that reduces the manufacturing cost relevant with mask, and saved the correlation time that has consumed during mask with carrying, thereby improved the production efficiency of liquid crystal indicator.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is a kind of structural representation of mask of the present invention;
Fig. 2 is the another kind of structural representation of mask of the present invention;
Fig. 3 is liquid crystal characteristic synoptic diagram among the another kind of embodiment of mask of the present invention;
Fig. 4 is the manufacture method process flow diagram of mask of the present invention;
Fig. 5 a is for forming the synoptic diagram of the first electrically conducting transparent winding displacement in the manufacture method of mask of the present invention;
Fig. 5 b is for forming the synoptic diagram of first transparent insulating film in the manufacture method of mask of the present invention;
Fig. 5 c is for forming the synoptic diagram of the second electrically conducting transparent winding displacement in the manufacture method of mask of the present invention;
Fig. 5 d is for forming the synoptic diagram of second transparent insulating film in the manufacture method of mask of the present invention;
Fig. 5 e is for injecting the synoptic diagram of liquid crystal in the manufacture method of mask of the present invention.
Description of reference numerals
The 1-upper substrate; The 101-first electrically conducting transparent winding displacement; 102-first transparent insulating film;
The 2-infrabasal plate; The 201-second electrically conducting transparent winding displacement; 202-second transparent insulating film;
The 3-alignment films; The 4-liquid crystal; The 5-chock insulator matter.
Embodiment
Fig. 1 is a kind of structural representation of mask of the present invention.As shown in Figure 1, mask comprises: clean transparent upper substrate 1; The first electrically conducting transparent winding displacement 101 is positioned at upper substrate 1 and arranges towards first direction; First transparent insulating film 102 is positioned at the first electrically conducting transparent winding displacement, 101 tops and covers upper substrate 1; Infrabasal plate 2; The second electrically conducting transparent winding displacement 201 is positioned at infrabasal plate 2 and towards the second direction arrangement, described second direction is perpendicular to described first direction; Second transparent insulating film 202 is positioned at the second electrically conducting transparent winding displacement, 201 tops and covers infrabasal plate 2; And will accompany liquid crystal 4 in upper substrate 1 and the infrabasal plate 2 opposed mask that form.
The mask of present embodiment, form vertical electric field by the second electrically conducting transparent winding displacement that is positioned at the first electrically conducting transparent winding displacement on the upper substrate and be positioned on the infrabasal plate, and the liquid crystal of arranging between upper substrate and infrabasal plate by this vertical electric field forms regional transmission and non-regional transmission to change transmitance.Thereby overcome the defective that needs a plurality of mask in the existing manufacturing process, thereby reduced the manufacturing cost of liquid crystal indicator by the mode that reduces the manufacturing cost relevant with mask, and saved the correlation time that has consumed during mask with carrying, thereby improved the production efficiency of liquid crystal indicator.
The width of the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is 0.05 μ m～0.35 μ m in the present embodiment, is preferably 0.2 μ m, and the spacing between two winding displacements is 0.1 μ m.
In the present embodiment, the material of the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is indium tin oxide or indium zinc paste.The material of first transparent insulating film and second transparent insulating film is SiO2.
In the present embodiment, the live width of the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is 0.05 μ m～0.35 μ m.In addition, provide signal, can first peripheral circuit be set in a side of upper substrate, and this first peripheral circuit is electrically connected with the first electrically conducting transparent winding displacement in order to give the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement; Similarly also can second peripheral circuit be set, and this second peripheral circuit is electrically connected with the second electrically conducting transparent winding displacement in a side of infrabasal plate.
In the present embodiment, spherical chock insulator matter (ball spacer) or cylindrical spacer (post spacer) are being set to keep the gap between upper substrate and the infrabasal plate between upper substrate and the infrabasal plate.
In the present embodiment, described liquid crystal is the cholesteric liquid crystal that chirality agent and nematic liquid crystal mix, and wherein said chirality agent has with the temperature characteristic that helically twisted power reduces that raises.The quality of chipal compounds accounts for 0.1%～20% in the cholesteric liquid crystal.Here cholesteric liquid crystal has two kinds of texture, promptly transparent planar texture and opaque focal conic texture.Two kinds of methods are arranged when planar texture changes focal conic texture into, promptly apply electric field and reduce temperature; When focal conic texture changes into after the plane, a kind of method is arranged, promptly improve temperature.Be specially: apply setting voltage by the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement to cholesteric liquid crystal, make cholesteric liquid crystal be in focal conic texture.This setting voltage is greater than the threshold voltage that is converted to focal conic texture from planar texture.Focal conic texture be a kind of can scattered light opaque state, have Memorability, be the characteristic of material itself.When the cholesteric liquid crystal of focal conic texture was heated to design temperature, the pitch of liquid crystal can become greatly, and focal conic texture will be unstable, and change planar texture in 1 hour.When the cholesteric liquid crystal cool to room temperature of focal conic texture, the pitch of liquid crystal can diminish, thereby becomes transparent planar texture, and planar texture is at room temperature steady in a long-term.Therefore this arrangement mode of planar texture can be fixed, and gets back to the preceding initial planar texture state of voltage that applies.So can realize in this way cholesteric liquid crystal transparent and opaque between conversion.
Wherein, the compound method of cholesteric liquid crystal is: with 4-trans-4-propyl group cyclohexyl-benzene nitrile, 4-is trans-4-amyl group cyclohexyl-benzene nitrile, 4-is trans-4-heptyl cyclohexyl-benzene nitrile, 4-is trans-and 4-amyl group cyclohexyl-4 '-cyanobiphenyl is successively according to mass ratio 24: 36: 25: and 15 are mixed into nematic liquid crystal, again chipal compounds are mixed into cholesteric liquid crystal with it according to mass ratio 1%.The following molecular formula one of the molecular formula of this chipal compounds wherein.
Molecular formula one:
The present embodiment mask has adopted the passive drive mode, therefore need to be equipped with corresponding passive drive circuit, its principle is specially: the first electrically conducting transparent winding displacement is lined by line scan, apply low level signal for the row scanning, apply common electrode signal between low level and high level for the non-row that is scanning.Meanwhile, the second electrically conducting transparent winding displacement applies high level signal for the pixel that is scanning.Such first electrically conducting transparent winding displacement applies the pixel that low level signal, the second electrically conducting transparent winding displacement apply high level signal will be owing to making liquid crystal produce phase transformation greater than the threshold voltage according difference, and reduce the transmitance of this pixel.Other pixels of this row are then because the voltage difference between the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement surpasses threshold voltage, so liquid crystal can not produce phase transformation, so this pixel is transparent.When first electrically conducting transparent winding displacement scanning next line, because the voltage difference maximum of lastrow pixel also is the pressure reduction between high level signal and the common electrode signal, do not surpass threshold voltage, therefore can not make liquid crystal produce phase transformation, and the transmitance of this row pixel identical state can keep scanning this row the time.When the first electrically conducting transparent winding displacement then will obtain required image to whole mask been scanned.Can scan with the second electrically conducting transparent winding displacement equally in the above-mentioned type of drive, repeat no more but its principle is identical.
Fig. 2 is the another kind of structural representation of mask of the present invention.As shown in Figure 2, mask comprises: clean transparent upper substrate 1; The first electrically conducting transparent winding displacement 101 is positioned at upper substrate 1 and arranges towards first direction; First transparent insulating film 102 is positioned at the first electrically conducting transparent winding displacement, 101 tops and covers upper substrate 1; Infrabasal plate 2; The second electrically conducting transparent winding displacement 201 is positioned at infrabasal plate 2 and towards the second direction arrangement, described second direction is perpendicular to described first direction; Second transparent insulating film 202 is positioned at the second electrically conducting transparent winding displacement, 201 tops and covers infrabasal plate 2; And will accompany liquid crystal 4 in upper substrate 1 and the infrabasal plate 2 opposed mask that form.
In the present embodiment, upper substrate and infrabasal plate are respectively equipped with alignment films, and the orientation probability of all directions is even on each alignment films.
In the present embodiment, the material of the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is indium tin oxide or indium zinc paste.The material of first transparent insulating film and second transparent insulating film is SiO2.
In the present embodiment, the live width of the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is 0.05 μ m～0.35 μ m.In addition, provide signal, can first peripheral circuit be set in a side of upper substrate, and this first peripheral circuit is electrically connected with the first electrically conducting transparent winding displacement in order to give the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement; Similarly also can second peripheral circuit be set, and this second peripheral circuit is electrically connected with the second electrically conducting transparent winding displacement in a side of infrabasal plate.
In the present embodiment, cylindrical spacer (post spacer) is being set to keep the gap between upper substrate and the infrabasal plate between upper substrate and the infrabasal plate.
Present embodiment adopts holotype PSCT liquid crystal (Normal-Mode PSCT abbreviates NM-PSCT as), is the focal conic texture of liquid crystal to be used perpendicular to the anisotropic polymer network of orientation substrate stablized, and enables to be in stable state under zero electric field.Burnt awl attitude is a multidomain attitude, liquid crystal is still arranged in the shape of a spiral in the little farmland of each liquid crystal (domain), the screw axis on different liquid crystal farmlands is random alignment then, when light incident, at adjacent liquid crystal farmland boundary, because the sudden change of refractive index, incident light reflects, and through the repeatedly strong scattering of refraction formation.Apply an electric field to liquid crystal, when electric field strength E＞Ec=2 π 2 (π K2/ Δ ε) 1/2/P, the helical structure of liquid crystal is opened, and all liquid crystal are arranged along direction of an electric field, liquid crystal is the dielectric layer that has a homogeneous refractive index for the light from all directions incident, thereby transmission well.NM-PSCT determines scattering efficiency to incident light according to the particle size on anisotropic refraction rate, thickness of liquid crystal layer and the liquid crystal farmland of liquid crystal material when scattering states.Under the certain condition of liquid crystal material and film thickness, determine scattering efficiency to incident light according to the particle size on liquid crystal farmland.Fig. 3 is liquid crystal characteristic synoptic diagram among the another kind of embodiment of mask of the present invention.As shown in Figure 3, for the incident light of different wave length, the scattering efficiency difference on liquid crystal farmland.
As can be seen, photoetching process adopts the open and close State Control transmissivity of ultraviolet wavelength (i line 365nm, h line 405nm, g line 436nm) by holotype PSCT liquid crystal at present, and obtains regional transmission and non-regional transmission.
Present embodiment adopts holotype PSCT liquid crystal (Normal-Mode PSCT, NM-PSCT), be by doping chiral material CM-33 (Japanese Chisso co. in nematic liquid crystal material PN-001 (Japanese Lotic co. provides), provide) being mixed obtains, the pitch of regulating liquid crystal by the concentration that changes chiral material.The polymeric material of selecting for use is a kind of double methyl methacrylate class monomer (Chemistry Dept. of Jilin Univ. is synthetic to be provided), the following molecular formula two of its molecular formula.
Molecular formula two:
Respectively there is a two key at the two ends of monomer molecule, and by UV-irradiation, two keys are easy to open and are cross-linked to form mutually network structure under the inducing of photosensitizer.Liquid crystal is mixed with monomer material according to certain ratio, and mix a spot of photosensitizer, the weight ratio of monomer material and photosensitizer is 20: 1.The potpourri of liquid crystal, monomer material and photosensitizer stirred under isotropic state make it abundant mixing, be prepared into employed liquid crystal.
The present embodiment mask has adopted the passive drive mode, therefore need to be equipped with corresponding passive drive circuit, its principle is specially: the first electrically conducting transparent winding displacement is lined by line scan, apply low level signal for the row scanning, apply common electrode signal between low level and high level for the non-row that is scanning.Meanwhile, the second electrically conducting transparent winding displacement applies high level signal for the pixel that is scanning.Such first electrically conducting transparent winding displacement applies the pixel that low level signal, the second electrically conducting transparent winding displacement apply high level signal will be owing to causing liquid crystal to reverse greater than the threshold voltage according difference, and improve the transmitance of this pixel, makes this pixel transparent.Other pixels of this row are then because the voltage difference between the first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement surpasses threshold voltage, so liquid crystal reverses very faintly, make this pixel transmitance very low.When first electrically conducting transparent winding displacement scanning next line, because the voltage difference maximum of lastrow pixel also is the pressure reduction between high level signal and the common electrode signal, do not surpass threshold voltage, therefore liquid crystal is obviously reversed, and the transmitance of this row pixel same state still can keep within a certain period of time being scanned with this row the time.Adjust refreshing frequency, make liquid crystal spontaneously when being lower than threshold voltage according be returned to the strong scattering state applying, and take place to scan this row again before the obvious deflection, so just can make it show needed image constantly.Can scan with the second electrically conducting transparent winding displacement equally in the above-mentioned type of drive, repeat no more but its principle is identical.
When using the present embodiment mask, the drawing input Control Software that will need the mask used at the exposure machine control desk, make that needing to present the liquid crystal of transparent part on the mask arranges regularly and present pellucidity under electric field action, the liquid crystal that need present nontransparent part under effect of electric field, irregularly arrange make the ultraviolet ray that shines these positions to around scattering.Because the liquid crystal that is adopted and the refractive index of adjuvant thereof cause the angle of total reflection very little, thereby can easily carry out total reflection to incident light much smaller than glass and quartzy refractive index.If the effect of scattering and total reflection stack just makes the transmitance that need present nontransparent part present the transmitance of transparent part much smaller than needs, so just can carry out the production of photoetching process according to conventional method.When needs are changed the mask pattern, need only new mask drawing input be got final product at control desk.
Fig. 4 is the manufacture method process flow diagram of mask of the present invention.Fig. 5 a is for forming the synoptic diagram of the first electrically conducting transparent winding displacement in the manufacture method of mask of the present invention.Fig. 5 b is for forming the synoptic diagram of first transparent insulating film in the manufacture method of mask of the present invention.Fig. 5 c is for forming the synoptic diagram of the second electrically conducting transparent winding displacement in the manufacture method of mask of the present invention.Fig. 5 d is for forming the synoptic diagram of second transparent insulating film in the manufacture method of mask of the present invention.Fig. 5 e is for injecting the synoptic diagram of liquid crystal in the manufacture method of mask of the present invention.Shown in Fig. 4～Fig. 5 e, this manufacture method comprises:
Step 103 on infrabasal plate, by magnetron sputtering deposition second nesa coating, and by laser scanning photoetching and etching technics, forms the second electrically conducting transparent winding displacement towards second direction, and described second direction is perpendicular to described first direction.Wherein second nesa coating is indium tin oxide or is indium zinc paste, and the width of the second electrically conducting transparent winding displacement is 0.05 μ m～0.35 μ m.
Step 104, formed on the described infrabasal plate of the described second electrically conducting transparent winding displacement and formed second transparent insulating film by PECVD, make described second transparent insulating film cover described infrabasal plate, fill and lead up and electrode is covered with the groove between this etched area and the non-etched area.Wherein second transparent insulating film is SiO2.
Step 105, involutory described upper substrate and described infrabasal plate, and inject liquid crystal.
The manufacture method of the mask of present embodiment, form vertical electric field by the second electrically conducting transparent winding displacement that is formed on the first electrically conducting transparent winding displacement on the upper substrate and be formed on the infrabasal plate, and the liquid crystal that flows between upper substrate and the infrabasal plate by this vertical electric field arrangement forms regional transmission and non-regional transmission to change transmitance.Thereby overcome the defective that needs a plurality of mask in the existing manufacturing process, thereby reduced the manufacturing cost of liquid crystal indicator by the mode that reduces the manufacturing cost relevant with mask, and saved the correlation time that has consumed during mask with carrying, thereby improved the production efficiency of liquid crystal indicator.
In the present embodiment, formed on the described upper substrate of first transparent insulating film and formed chock insulator matter.
In the present embodiment, formed on the described infrabasal plate of second transparent insulating film and formed chock insulator matter.
In the present embodiment, described involutory described upper substrate and described infrabasal plate, and the injection liquid crystal is specially: involutory described upper substrate of elder generation and described infrabasal plate, liquid crystal is injected in the back; Perhaps inject liquid crystal, involutory described upper substrate in back and described infrabasal plate earlier.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a mask is characterized in that, comprising:
Upper substrate;
The first electrically conducting transparent winding displacement is positioned at described upper substrate and arranges towards first direction;
First transparent insulating film is positioned at described first electrically conducting transparent winding displacement top and covers described upper substrate;
Infrabasal plate;
The second electrically conducting transparent winding displacement is positioned at described infrabasal plate and towards the second direction arrangement, described second direction is perpendicular to described first direction;
Second transparent insulating film is positioned at described second electrically conducting transparent winding displacement top and covers described infrabasal plate;
Accompany liquid crystal between described upper substrate and the described infrabasal plate.
2. mask according to claim 1 is characterized in that, the live width of the described first electrically conducting transparent winding displacement and the second electrically conducting transparent winding displacement is 0.05 μ m～0.35 μ m.
3. mask according to claim 1 is characterized in that, is provided with chock insulator matter between described upper substrate and the described infrabasal plate.
4. mask according to claim 1, it is characterized in that, described upper substrate and described infrabasal plate are respectively equipped with alignment films, and the direction of orientation of two alignment films is vertical mutually, and described liquid crystal is the cholesteric liquid crystal that chirality agent and nematic liquid crystal mix, and wherein said chirality agent has with the temperature characteristic that helically twisted power reduces that raises.
5. mask according to claim 1, it is characterized in that, described upper substrate and described infrabasal plate are respectively equipped with alignment films, and the orientation probability of all directions is even on each alignment films, and described liquid crystal is the cholesteric liquid crystal of polymer stabilizing or is pure nematic liquid crystal.
6. the manufacture method of a mask is characterized in that, comprising:
On upper substrate, form the first electrically conducting transparent winding displacement towards first direction;
Formed and formed first transparent insulating film on the described upper substrate of the described first electrically conducting transparent winding displacement, made described first transparent insulating film cover described upper substrate;
On infrabasal plate, form the second electrically conducting transparent winding displacement towards second direction, described second direction is perpendicular to described first direction;
Formed and formed second transparent insulating film on the described infrabasal plate of the described second electrically conducting transparent winding displacement, made described second transparent insulating film cover described infrabasal plate;
Involutory described upper substrate and described infrabasal plate, and inject liquid crystal.
7. the manufacture method of mask according to claim 6 is characterized in that, has formed the described upper substrate of first transparent insulating film and has formed on the described infrabasal plate of second transparent insulating film to form alignment films respectively, and described alignment films is rubbed.
8. the manufacture method of mask according to claim 6 is characterized in that, has formed on the described upper substrate of first transparent insulating film and has formed chock insulator matter.
9. the manufacture method of mask according to claim 6 is characterized in that, has formed on the described infrabasal plate of second transparent insulating film and has formed chock insulator matter.
10. the manufacture method of mask according to claim 6 is characterized in that, described involutory described upper substrate and described infrabasal plate, and the injection liquid crystal is specially:
Involutory described upper substrate of elder generation and described infrabasal plate, liquid crystal is injected in the back; Perhaps
Inject liquid crystal earlier, involutory described upper substrate in back and described infrabasal plate.
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| CN200810247423A CN101770091A (en) | 2008-12-31 | 2008-12-31 | Mask plate and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810247423A CN101770091A (en) | 2008-12-31 | 2008-12-31 | Mask plate and manufacturing method thereof |
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| CN101770091A true CN101770091A (en) | 2010-07-07 |
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| KR20170045387A (en) * | 2014-10-28 | 2017-04-26 | 보에 테크놀로지 그룹 컴퍼니 리미티드 | Mask and fabrication method thereof, and method of patterning by using mask |
| CN104280997A (en) * | 2014-10-28 | 2015-01-14 | 京东方科技集团股份有限公司 | Mask plate and manufacturing method as well as method for composing picture by using same |
| CN104280997B (en) * | 2014-10-28 | 2018-05-22 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, the method using mask plate composition |
| KR101978744B1 (en) | 2014-10-28 | 2019-05-15 | 보에 테크놀로지 그룹 컴퍼니 리미티드 | Mask and fabrication method thereof, and method of patterning by using mask |
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Application publication date: 20100707 |