CN101763315B - Multi level cell-based data storage method and device thereof - Google Patents
Multi level cell-based data storage method and device thereof Download PDFInfo
- Publication number
- CN101763315B CN101763315B CN2008101865484A CN200810186548A CN101763315B CN 101763315 B CN101763315 B CN 101763315B CN 2008101865484 A CN2008101865484 A CN 2008101865484A CN 200810186548 A CN200810186548 A CN 200810186548A CN 101763315 B CN101763315 B CN 101763315B
- Authority
- CN
- China
- Prior art keywords
- page
- memory cell
- leaf
- cell block
- centering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Read Only Memory (AREA)
Abstract
The embodiment of the invention discloses a multi level cell-based data storage method and a device thereof. The method comprises the following steps: acquiring a page from each page pair in a storage unit block which is positioned in the multi level cell; generating a page table of the storage unit block in the storage unit block; and writing data into the storage unit block according to the generated page table. The device comprises a page acquisition module, a page table generation module and a data write module. The embodiment of the invention can further improve the data writing speed of the multi level cell.
Description
Technical field
The present invention relates to field of computer technology, relate in particular to a kind of date storage method, device based on the multi-level unit flash memory.
Background technology
At present, flash memory (Nand Flash) comprises two kinds of single stage unit (SLC, Single Level Cell) flash memory and multi-level unit (MLC, Multi Level Cell) flash memories.
Single level cell flash memory is to be made of the memory cell block of some (Block).With common single level cell flash memory is example, its each memory cell block comprises 64 pages or leaves (Page), and each page or leaf comprises 2112 storage unit (Cell), each cell stores 1 Bit data, from physical arrangement, this 1 Bit data is distributed on 1 page or leaf.Page or leaf is minimum programming unit, and page or leaf is according to the address size series arrangement.
The multi-level unit flash memory also is that the memory cell block by some constitutes.With common multi-level unit flash memory is example, its each memory cell block comprises 128 pages or leaves, each page or leaf comprises 2112 storage unit, be different from single level cell flash memory, each storage unit of multi-level unit flash memory can be stored 2 Bit datas, and this 2 Bit data is distributed in respectively in two pages or leaves, these 2112 storage unit associations two pages or leaves, so its 128 pages or leaves to have constituted 64 pages or leaves right.
When the multi-level unit flash memory is write data, because page or leaf is its minimum programming unit, when operating one of them page, any one storage unit can be written into 1 Bit data, but when operation and this page constitute right another page of page or leaf, can 1 Bit data of having stored in the respective memory unit be impacted.Therefore, in order to guarantee the stability and the correctness of 1 Bit data that a page or leaf centering has been stored, need the more time of cost write 1 Bit data, thereby it is slower than single level cell flash memory to cause the multi-level unit flash memory to write the speed of data to another right page or leaf of this page.
Summary of the invention
The embodiment of the invention provides a kind of date storage method based on the multi-level unit flash memory, device, can improve the writing speed of multi-level unit flash memory.
For achieving the above object, the embodiment of the invention provides following technical scheme:
The embodiment of the invention provides a kind of date storage method based on the multi-level unit flash memory, comprising:
Each page centering in memory cell block is obtained a page or leaf, and described memory cell block is arranged in the multi-level unit flash memory;
Generate the page table of this memory cell block according to the page or leaf that from described memory cell block, obtains;
According to the described page table that generates data are write this page or leaf that obtains of described each page of memory cell block centering, whether needn't consider can be influential to the data of another page storage of same page or leaf centering, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
The embodiment of the invention also provides a kind of data recording control apparatus, comprising:
The page or leaf acquisition module, each page centering that is used in the memory cell block is obtained a page or leaf, and described memory cell block is arranged in the multi-level unit flash memory;
Generate the page table module, be used for generating the page table of this memory cell block according to the page or leaf that obtains from described memory cell block;
The data writing module, be used for data being write this page or leaf that obtains of described each page of memory cell block centering according to the described page table that generates, whether needn't consider can be influential to the data of another page storage of same page or leaf centering, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
The embodiment of the invention is obtained a page or leaf from each page centering of memory cell block, and generate the page table of this memory cell block, data can be write a page or leaf of each page centering according to the page table that generates, whether needn't consider can be influential to the data of another page storage of same page or leaf centering, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The schematic flow sheet of a kind of date storage method based on the multi-level unit flash memory that Fig. 1 provides for the embodiment of the invention one;
The schematic flow sheet of a kind of date storage method based on the multi-level unit flash memory that Fig. 2 provides for the embodiment of the invention two;
The logical organization synoptic diagram of a kind of data recording control apparatus that Fig. 3 provides for the embodiment of the invention three.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
Embodiment one:
See also Fig. 1, the schematic flow sheet of a kind of date storage method based on the multi-level unit flash memory that Fig. 1 provides for the embodiment of the invention one.As shown in Figure 1, this method can comprise:
Step 101: each page centering in memory cell block is obtained a page or leaf, and described memory cell block is arranged in the multi-level unit flash memory.
Step 102: the page table that generates this memory cell block according to the page or leaf that from described memory cell block, obtains.
Step 103: data are write described memory cell block according to the described page table that generates.
The embodiment of the invention one is obtained a page or leaf from each page centering of memory cell block, and generate the page table of this memory cell block, data can be write a page or leaf of each page centering according to the page table that generates, whether needn't consider can be influential to the data of another page storage of same page or leaf centering, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
Embodiment two:
See also Fig. 2, the schematic flow sheet of a kind of date storage method based on the multi-level unit flash memory that Fig. 2 provides for the embodiment of the invention two.As shown in Figure 2, this method can comprise:
Step 201: the page or leaf of each page centering picked at random in the memory cell block, described memory cell block is arranged in the multi-level unit flash memory.
In the multi-level unit flash memory, there is the memory cell block of some, each memory cell block can comprise a plurality of storage unit, each storage unit can be stored 2 Bit datas, from physical arrangement, 2 Bit datas of storage are distributed on 2 pages or leaves, and it is right that these 2 pages or leaves constitute a page or leaf.
In the multi-level unit flash memory, there is the memory cell block of some.Each memory cell block of common multi-level unit flash memory comprises 128 pages or leaves, each memory page comprises 2112 storage unit, be different from single level cell flash memory, each storage unit of multi-level unit flash memory can be stored 2 Bit datas, and this 2 Bit data is distributed in respectively in two pages or leaves, these 2112 storage unit associations two pages or leaves, so its 128 pages or leaves to have constituted 64 pages or leaves right.
For to the page or leaf of existing multi-level unit flash memory to there being one clear to understand, giving one example below describes.
Please see table 1, the right combination of page or leaf in the memory cell block of table 1 expression multi-level unit flash memory.As can be seen, there are 128 pages or leaves in this memory cell block, the address of page or leaf respectively from 0 to 127.
| Page or leaf A | Page or leaf B | Page or leaf A | Page or leaf B |
| 0 | 4 | . . | . . |
| 1 | 5 | . . | . . |
| 2 | 8 | . . | . . |
| 3 | 9 | . . | . . |
| 6 | 12 | 95 | 102 |
| 7 | 13 | 98 | 104 |
| 10 | 16 | 99 | 105 |
| 11 | 17 | 102 | 108 |
| 14 | 20 | 103 | 109 |
| 15 | 21 | 106 | 112 |
| 18 | 24 | 107 | 113 |
| 19 | 25 | 110 | 116 |
| 22 | 28 | 111 | 117 |
| 23 | 29 | 114 | 120 |
| 26 | 32 | 115 | 121 |
| . . | . . | 118 | 124 |
| . . | . . | 119 | 125 |
| . . | . . | 122 | 126 |
| . . | . . | 123 | 127 |
Table 1
Wherein, page or leaf A and the page or leaf B with delegation is that a page or leaf is right.As the page address in the table 1 is that 0 page or leaf A and page address are that a page B of 4 is that a page or leaf is right; As the page address in the table 1 is that 26 page or leaf A and page address are that a page B of 32 is that a page or leaf is right; As the page address in the table 1 be 123 page or leaf A and page address be a page B of 127 be a page or leaf to or the like.
According to the method that provides of the embodiment of the invention, can be from page or leaf of each page centering picked at random, the possibility of result of choosing is that all pages or leaves all are page A, also may be that all pages or leaves all are page B, perhaps, also may be the mixing of page A and page or leaf B.
Can know according to the method that the embodiment of the invention provides, the number of all that choose out page have only the total page number purpose half, promptly be 64 pages or leaves.Calm measuring angle considers, the active volume of this memory cell block is original half.
In addition, the method that provides of the embodiment of the invention also can adopt fixed form to choose the page or leaf of page address minimum from each page centering in the memory cell block; Perhaps, adopt fixed form to choose the page or leaf of page address maximum from each page centering in the memory cell block.The embodiment of the invention is not done qualification at this.
Step 202: the page or leaf that will obtain carries out series arrangement from small to large according to the size of page address, constitutes the page table of this memory cell block.
If all pages or leaves picked at random or that choose with fixed form all are page A, with all pages A of choosing size, carry out series arrangement from small to large according to page address, constitute the page table of this memory cell block.As shown in table 2, when all pages or leaves that table 2 expression is chosen are page or leaf A, the page table of this memory cell block of generation.
| Page address | Page address |
| 0 | . . |
| 1 | . . |
| 2 | . . |
| 3 | . . |
| 6 | 95 |
| 7 | 98 |
| 10 | 99 |
| 11 | 102 |
| 14 | 103 |
| 15 | 106 |
| 18 | 107 |
| 19 | 110 |
| 22 | 111 |
| 23 | 114 |
| 26 | 115 |
| . . | 118 |
| . . | 119 |
| . . | 122 |
| . . | 123 |
Table 2
Need to prove, here just for the ease of introducing, the page or leaf that all are chosen for example all is a page A, those of ordinary skills should expect no matter all pages or leaves of choosing are page A, or page or leaf B, or the mixing of page or leaf A and page or leaf B, all pages or leaves of choosing all carry out series arrangement according to the page address size, constitute the page table of this memory cell block.Have only the page or leaf on the page table just can be written into data.
Step 203: data are write described memory cell block according to the putting in order of page address in the described page table that generates.
Owing to have a plurality of memory cell blocks in the multi-level unit flash memory, if the page table of each memory cell block that generates is identical, when then data being write each memory cell block, can a public page table; If the page table of each memory cell block that generates is inequality, when then data being write each memory cell block, can carries out data according to the page table of each storage unit and write.
Above-mentioned a kind of date storage method based on the multi-level unit flash memory that the embodiment of the invention two is provided is introduced, the embodiment of the invention is obtained a page or leaf from each page centering of memory cell block, and generate the page table of this memory cell block, data can be write a page or leaf of each page centering according to the page table that generates, needn't consider that the data that whether can write another page of same page or leaf centering are influential, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
Embodiment three:
See also Fig. 3, the logical organization synoptic diagram of a kind of data recording control apparatus that Fig. 3 provides for the embodiment of the invention two.As shown in Figure 3, this device can comprise:
Page or leaf acquisition module 301, each page centering that is used in the memory cell block is obtained a page or leaf, and described memory cell block is arranged in the multi-level unit flash memory.
Wherein, described page or leaf acquisition module 301 specifically can be from the page or leaf of each page centering picked at random in the memory cell block, and described memory cell block is arranged in the multi-level unit flash memory.
Wherein, described page or leaf acquisition module 301 specifically can be chosen a page or leaf of page address minimum from each page centering in the memory cell block, and described memory cell block is arranged in the multi-level unit flash memory.
Wherein, described page or leaf acquisition module 301 specifically can be chosen the maximum page or leaf of page address from each page centering in the memory cell block, and described memory cell block is arranged in the multi-level unit flash memory.
Generate page table module 302, be used for generating the page table of this memory cell block according to the page or leaf that obtains from described memory cell block.
Wherein, described generation page table module 302 specifically can be carried out series arrangement according to the size of page address from small to large with the page or leaf that obtains, and constitutes the page table of this memory cell block.
Wherein, described data writing module 303 specifically can write described memory cell block according to the putting in order of page address in the described page table that generates with data.
When needs during with data write storage unit piece, page or leaf acquisition module 301 page or leaf of each page centering picked at random in the memory cell block, the number of all that choose out page have only the total page number purpose half.Calm measuring angle considers, the active volume of this memory cell block is original half.
When page or leaf acquisition module 301 was chosen all pages or leaves in memory cell block after, all pages that generation page table module 302 will be obtained carried out series arrangement from small to large according to the size of page address, constitute the page table of this memory cell block.
After the page table that generates page table module 302 these memory cell blocks of generation, described data writing module 303 writes described memory cell block with data according to the putting in order of page address in the described page table that generates.
Above-mentionedly a kind ofly carried out introduction according to memory control device to what the embodiment of the invention three provided.The embodiment of the invention is obtained a page or leaf from each page centering of memory cell block, and generate the page table of this memory cell block, data can be write a page or leaf of each page centering according to the page table that generates, needn't consider that the data that whether can write another page of same page or leaf centering are influential, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can be finished by the relevant hardware of programmed instruction, aforesaid program can be stored in the computer read/write memory medium, this program is carried out the step that comprises said method embodiment when carrying out; And aforesaid storage medium comprises: various media that can be program code stored such as ROM (read-only memory) (ROM), random access device (RAM), magnetic disc or CD.
More than a kind of date storage method based on the multi-level unit flash memory, device that the embodiment of the invention provided are described in detail, used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (12)
1. the date storage method based on the multi-level unit flash memory is characterized in that, comprising:
Each page centering in memory cell block is obtained a page or leaf, and described memory cell block is arranged in the multi-level unit flash memory;
Generate the page table of this memory cell block according to the page or leaf that from described memory cell block, obtains;
According to the described page table that generates data are write this page or leaf that obtains of described each page of memory cell block centering, whether needn't consider can be influential to the data of another page storage of same page or leaf centering, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
2. method according to claim 1 is characterized in that, described each in memory cell block page centering is obtained a page or leaf and is specially:
Page or leaf of each page centering picked at random in the memory cell block.
3. method according to claim 1 is characterized in that, described each in memory cell block page centering is obtained a page or leaf and is specially:
Each page centering in the memory cell block is chosen a page or leaf of page address minimum.
4. method according to claim 1 is characterized in that, described each in memory cell block page centering is obtained a page or leaf and is specially:
Each page centering in memory cell block is chosen the maximum page or leaf of page address.
5. method according to claim 1 is characterized in that, the page table that the page or leaf that described basis is obtained from described memory cell block generates this memory cell block is specially:
The page or leaf that obtains is carried out series arrangement from small to large according to the size of page address, constitute the page table of this memory cell block.
6. according to each described method of claim 1 to 5, it is characterized in that described described page table according to generation writes this page or leaf that obtains of described each page of memory cell block centering with data and is specially:
According to the putting in order of page address in the described page table that generates data are write this page or leaf that obtains of described each page of memory cell block centering.
7. a data recording control apparatus is characterized in that, comprising:
The page or leaf acquisition module, each page centering that is used in the memory cell block is obtained a page or leaf, and described memory cell block is arranged in the multi-level unit flash memory;
Generate the page table module, be used for generating the page table of this memory cell block according to the page or leaf that obtains from described memory cell block;
The data writing module, be used for data being write this page or leaf that obtains of described each page of memory cell block centering according to the described page table that generates, whether needn't consider can be influential to the data of another page storage of same page or leaf centering, thereby can under the prerequisite of passing over the memory cell block max cap., further improve the writing speed of multi-level unit flash memory.
8. device according to claim 7 is characterized in that, described page or leaf acquisition module specifically is used for the page or leaf of each page centering picked at random in the memory cell block, and described memory cell block is arranged in the multi-level unit flash memory.
9. device according to claim 7 is characterized in that, described page or leaf acquisition module specifically is used for the page or leaf that each page centering in the memory cell block is chosen the page address minimum, and described memory cell block is arranged in the multi-level unit flash memory.
10. device according to claim 7 is characterized in that, described page or leaf acquisition module specifically is used for the page or leaf that each page centering in the memory cell block is chosen the page address maximum, and described memory cell block is arranged in the multi-level unit flash memory.
11. device according to claim 7 is characterized in that, the page or leaf that described generation page table module specifically is used for obtaining carries out series arrangement from small to large according to the size of page address, constitutes the page table of this memory cell block.
12. according to each described device of claim 7 to 11, it is characterized in that described data writing module specifically is used for according to the putting in order of page address of the described page table that generates data being write this page or leaf that obtains of described each page of memory cell block centering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101865484A CN101763315B (en) | 2008-12-25 | 2008-12-25 | Multi level cell-based data storage method and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101865484A CN101763315B (en) | 2008-12-25 | 2008-12-25 | Multi level cell-based data storage method and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101763315A CN101763315A (en) | 2010-06-30 |
| CN101763315B true CN101763315B (en) | 2011-09-14 |
Family
ID=42494482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101865484A Active CN101763315B (en) | 2008-12-25 | 2008-12-25 | Multi level cell-based data storage method and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101763315B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108052410B (en) * | 2017-12-20 | 2021-04-13 | 北京兆易创新科技股份有限公司 | Method and device for preventing errors of SPI-Nand read data page |
-
2008
- 2008-12-25 CN CN2008101865484A patent/CN101763315B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101763315A (en) | 2010-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7627712B2 (en) | Method and system for managing multi-plane memory devices | |
| CN102549672B (en) | Optimized page programming order for non-volatile memory | |
| CN101552036B (en) | Flash memory device having dummy cells and method of operating the same | |
| US9329989B2 (en) | System and method for pre-interleaving sequential data | |
| US8051339B2 (en) | Data preserving method and data accessing method for non-volatile memory | |
| US10007446B2 (en) | Method, apparatus, and storage medium for writing data into persistent storage device | |
| US20090164707A1 (en) | Method and system for accessing non-volatile memory | |
| CN107391389B (en) | Method for managing a memory device, memory device and controller | |
| US7945723B2 (en) | Apparatus and method of managing mapping table of non-volatile memory | |
| US20120246394A1 (en) | Flash Memory Device and Data Writing Method for a Flash Memory | |
| CN106445843A (en) | Correlating physical page addresses for soft decision decoding | |
| US9595335B2 (en) | Memory device and systems and methods for selecting memory cells in the memory device | |
| CN103777904A (en) | Data storage device and data scrambling and descrambling method | |
| US10185662B2 (en) | Methods for reprogramming data and apparatuses using the same | |
| CN113539342A (en) | Active read interference mitigation | |
| CN109036488A (en) | Memory Controller, the method and storage system for operating the Memory Controller | |
| CN103744744A (en) | Data storage device and data checking method of volatile storage | |
| CN106856102B (en) | Programming method for Nand Flash | |
| US9304686B2 (en) | Data storage device and data trimming method | |
| CN101763315B (en) | Multi level cell-based data storage method and device thereof | |
| CN105912279B (en) | Solid-state storage recovery system and solid-state storage recovery method | |
| CN110045920B (en) | Memory device and method of operating the same | |
| US20090182932A1 (en) | Method for managing flash memory blocks and controller using the same | |
| US10658042B2 (en) | Semiconductor memory device and method of erasing data of partial page and overwriting partial page with predetermined data | |
| CN109726140A (en) | Nonvolatile semiconductor memory member and its operating method and storage equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |