Summary of the invention
Purpose of the present invention provides a kind of novel inorganic high-temperature resistant and antistatic coating at the antistatic property of material under the hot environment, has improved the antistatic property of material, has reduced the harm that static brings, and provides certain high temperature resistant protection for material simultaneously.
Above-mentioned purpose of the present invention is achieved through the following technical solutions: this coating main ingredient has phosphoric acid salt, silicon sol, boric acid, water, titanate coupling agent, conductive mica powder, aluminium-doped zinc oxide powder etc.Wherein phosphate content is 30~60% (weight contents, together following), and boric acid content is 2~10%, and water-content is 25~45%, the content 5~25% of silicon sol, titanate coupling agent content is 2~5%, and conductive mica powder content is 8~18%, and the aluminium-doped zinc oxide powder content is 5~10%.
The phosphoric acid salt base-material is prepared from by following material at least among the present invention:
(1) a kind of metal oxide or metal hydroxides and phosphoric acid react in deionized water, and metal oxide or metal hydroxides are aluminium hydroxide, magnesium oxide, zinc oxide etc., react in deionized water with phosphoric acid to generate the phosphoric acid salt base-material.
(2) two kinds of metal oxides or metal hydroxides and phosphoric acid react in deionized water, and metal oxide or metal hydroxides are selected from aluminium hydroxide, magnesium oxide, zinc oxide etc., react in deionized water with phosphoric acid to generate the phosphoric acid salt base-material.
(3) phosphoric acid salt P: M (M is metallic element)=1.2~2.6 wherein.
Silicon sol solid part used among the present invention is 25~45%, and the amount of solid content of silicon sol is more high, and its cost is just more high, and different along with phosphoric acid salt base-material and other amounts of components are selected the silicon sol of corresponding solid part.
In order to improve the antistatic property of coating, need to add antistatic materials such as conductive mica powder, aluminium-doped zinc oxide powder among the present invention, but therefore their poor stabilities in the phosphoric acid salt base-material need to join in the phosphoric acid salt base-material after the special processing again.Detailed process is for to be dissolved in titanate coupling agent in 95% ethanol, 95% ethanol wherein: titanate coupling agent=30~50: 1, get titanate coupling agent 95% ethanolic soln 100ml and 200~300g conductive mica powder, aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, and the temperature of the hierarchy of control is less than 70 ℃ when pressure distillation, and pressure distillation finishes to be placed on 12h in the air.The conductive mica powder, the aluminium-doped zinc oxide powder that mix can add in the phosphoric acid salt base-material system.
Embodiment
Add a certain amount of boric acid after in reaction flask, at first adding the metal oxide of phosphoric acid (85%) and certain amount ratio and metal hydroxides temperature rising reflux reaction 2h, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water after 60 ℃, make base-material.
After titanate coupling agent is dissolved in 95% ethanol, with conductive mica powder, aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture preparation coating of a certain amount of base-material, a certain amount of silicon sol and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity, resistance to elevated temperatures, coating hardness, sticking power.
Embodiment 1
At first add the boric acid that adds 12.0g behind phosphoric acid (85%) 140.0g and the 35.0g aluminium hydroxide temperature rising reflux reaction 2h in reaction flask, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water 100.0g after 60 ℃, make base-material.
After the 10.0g titanate coupling agent is dissolved in 450.0g95% ethanol, with 65.0g conductive mica powder, 35.0g aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture 35.0g preparation coating of 100.0g base-material, 100.0g silicon sol (45%) and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity 9.8 * 10
6Ω, 700 ℃ of 5h of resistance to elevated temperatures are intact, coating hardness 6H, 1 grade of sticking power (frame method).
Embodiment 2
At first add the boric acid that adds 12.0g behind phosphoric acid (85%) 140.0g and the 35.0g aluminium hydroxide temperature rising reflux reaction 2h in reaction flask, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water 100.0g after 60 ℃, make base-material.
After the 10.0g titanate coupling agent is dissolved in 450.0g95% ethanol, with 65.0g conductive mica powder, 35.0g aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture 35.0g preparation coating of 100.0g base-material, 70.0g silicon sol (45%) and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity 5.9 * 10
6Ω, 700 ℃ of 5h of resistance to elevated temperatures are intact, coating hardness 5H, 1 grade of sticking power (frame method).
Embodiment 3
At first add the boric acid that adds 12.0g behind phosphoric acid (85%) 140.0g and the 42.0g aluminium hydroxide temperature rising reflux reaction 2h in reaction flask, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water 100.0g after 60 ℃, make base-material.
After the 10.0g titanate coupling agent is dissolved in 450.0g95% ethanol, with 65.0g conductive mica powder, 35.0g aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture 35.0g preparation coating of 100.0g base-material, 90.0g silicon sol (45%) and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity 8.2 * 10
6Ω, 700 ℃ of 5h of resistance to elevated temperatures are intact, coating hardness 5H, 2 grades of sticking power (frame method).
Embodiment 4
In reaction flask, at first add the boric acid that adds 12.0g behind phosphoric acid (85%) 140.0g and 35.0g aluminium hydroxide and the 5.0g magnesium oxide temperature rising reflux reaction 2h, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water 100.0g after 60 ℃, make base-material.
After the 10.0g titanate coupling agent is dissolved in 450.0g95% ethanol, with 65.0g conductive mica powder, 35.0g aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture 35.0g preparation coating of 100.0g base-material, 100.0g silicon sol (45%) and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity 9.1 * 10
6Ω, 700 ℃ of 5h of resistance to elevated temperatures are intact, coating hardness 6H, 1 grade of sticking power (frame method).
Embodiment 5
At first add the boric acid that adds 12.0g behind phosphoric acid (85%) 140.0g and the 30.0g aluminium hydroxide temperature rising reflux reaction 2h in reaction flask, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water 100.0g after 60 ℃, make base-material.
After the 10.0g titanate coupling agent is dissolved in 450.0g95% ethanol, with 65.0g conductive mica powder, 35.0g aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture 35.0g preparation coating of 100.0g base-material, 110.0g silicon sol (45%) and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity 9.0 * 10
6Ω, 700 ℃ of 5h of resistance to elevated temperatures are intact, coating hardness 6H, 1 grade of sticking power (frame method).
Embodiment 6
At first add the boric acid that adds 12.0g behind phosphoric acid (85%) 140.0g and the 24.5g magnesium oxide temperature rising reflux reaction 2h in reaction flask, continue to cool off behind the back flow reaction 1h, the temperature of system adds deionized water 100.0g after 60 ℃, make base-material.
After the 10.0g titanate coupling agent is dissolved in 450.0g95% ethanol, with 65.0g conductive mica powder, 35.0g aluminium-doped zinc oxide powder mixing and stirring, in 60 ± 2 ℃ environment, place 4h.The second alcohol and water is removed in underpressure distillation again, makes conductive mica powder, aluminium-doped zinc oxide powder mixture.
Get the mixture 35.0g preparation coating of 100.0g base-material, 70.0g silicon sol (45%) and the conductive mica powder of having handled, aluminium-doped zinc oxide powder.
Correlated performance after test coating and the film forming: surface resistivity 7.2 * 10
6Ω, 700 ℃ of 5h of resistance to elevated temperatures are intact, coating hardness 5H, 1 grade of sticking power (frame method).