CN101759436B - Carborundum ceramics manufacturing method based on novel nanometer four-component sintering additives - Google Patents
Carborundum ceramics manufacturing method based on novel nanometer four-component sintering additives Download PDFInfo
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Abstract
A carborundum ceramics preparing method with novel nanometer four-component oxide sintering additives is characterized in that in the adopted four-component oxide sintering additives, two are Al203 and Y 203 and the other two are nanometer MO (M is one of Mg, Ba, Be and Ca) and L203 (L is a rare-earth element and is one of La, Ce and Lu). Each substance accounts for 0.1 to 0.7 of the whole sintering additives in percentage by weight. The particle size of the four-component novel sintering additives is less than 300 nanometers and the particle size of the main component carborundum is micron. The main raw material of 75-90wt% of carborundum powder with micron particle size, 5-20 wt% novel nanometer four-component sintering additives and 1-5wt% binding agent is fabricated into carborundum ceramics sintering body after the work procedures of high power ultrasonic mixing, drying, molding, high temperature sintering and the like. The method can overcome the contradiction between the low sintering temperature and the dissatisfactory high temperature mechanical property for the liquid phase sintering carborundum ceramics, thus is particularly applicable to the high strength continuous use in ultra high temperature harsh environment.
Description
Technical field
The present invention relates to a kind of method for manufacturing silicon carbide ceramics technical field based on novel nanometer four-component sintering additives.
Background technology
Good characteristics such as thyrite has that hot strength is big, high-temperature oxidation resistance is strong, abrasion resistance properties is good, thermostability is good, thermal expansivity is little, thermal conductivity is big, hardness is high, anti-thermal shock and resistance to chemical attack; In fields such as automobile, mechanical chemical industry, environment protection, space technology, information electronics, the energy increasingly extensive application is arranged, become a kind of irreplaceable structural ceramics of other materials at a lot of industrial circle excellent performances.
Dynamic seal in the mechanical means is to carry out through the rotational slide of two seal face materials, as the seal face material, requires hardness high, has wearability.Suitable height of the hardness of silicon carbide ceramics and frictional coefficient are little, so silicon carbide ceramics can obtain sliding properties that other material is beyond one's reach as the mechanical seal end surface material.On the other hand, two mechanical seal materials can produce certain heat owing to rub in rotary movement, thereby the local temperature of seal face is raise, so the end face material also must can tolerate certain temperature.In the rotational slide process, produce thermal strain and hot tearing for fear of the mechanical seal material, require thermal conductivity height, the good thermal shock of end face material.At present, silicon carbide ceramics obtains number of applications in all kinds of mechanical seals, and for the laborsaving of mechanical means with energy-conservationly made very big contribution, demonstrate other materials incomparable meliority.Silicon carbide ceramics also successfully is used as various bearings, cutting tool in mechanical industry.
In automotive industry,, make full use of the energy in order to improve the thermo-efficiency of mover; Reduce fuel consumption, reduce topsoil, hope that the working temperature of mover is higher than 1200 ℃ (according to calculating; When the working temperature of mover was brought up to 1370 ℃ by 1100 ℃, thermo-efficiency can increase by 30%).The hot strength of silicon carbide ceramics because of being had, lower thermal expansivity, higher thermal conductivity and thermal-shock resistance and be considered to use temperature and surpass 1200 ℃ of candidate materials the most promising preferably.The country such as the U.S., Germany and the Japan that have the advanced ceramics technology have developed engine component such as motor stator, rotor, burner and the volute pipe that adopts silicon carbide ceramics and have obtained good result of use, just are being devoted to the development research of full ceramic engine at present.
What need in the occasion of needs such as aerospace, nuclear industry tolerances ultra high temp such as nuclear fission and the fusion reactor bears 2000 degree left and right sides pyritous heat-stable materials; Rocket and aerospacecraft surface are used for tolerating the thermal insulation tile up to thousands of K temperature that produces with the violent friction of atmosphere; Rocket combustion chamber's larynx lining and inner lining material, gas-turbine blade; The top board of High Temperature Furnaces Heating Apparatus, support, and the high temperature members such as jig of high temperature experiment usefulness also generally adopt the silicon carbide ceramics member.Silicon carbide ceramics also is widely used as various corrosion-resistant with container and pipeline in petrochemical industry.
Because the high-performance of silicon carbide ceramics and the widespread use in industrial circle, the sintering of SiC are the focuses of material circle research always.But because silit is the extremely strong covalent linkage compound of a kind of covalency, even under 2100 ℃ high temperature, the self-diffusion coefficient of C and Si also is merely 1.5 * 10
-10With 2.5 * 10
-13Cm
2/ s.So SiC is difficult to sintering; Must could realize densification [Krishi Negita by sintering aid or external pressure; Effective sintering aids for silicon carbide ceramics:reactivities of silicon carbide with various additives; J.Am.Ceram.Soc., 1986,69 (12): C308-310.].
The method of adding or not adding sintering aid by means of external pressure, in the sintering precursor powder is exactly hot pressed sintering [east of a river is bright, Pan Zhensu, Wang Daqian, Huang Yuzhen, Wang Juhong, Lin Qingling, silicate journal, 1981,9:133-146.].But the employing hot-pressing sintering technique can only prepare the silicon carbide components of simple shape, and seldom and very is unfavorable for commercially producing through the quantity of the prepared product of once sintered process.So U.S. Carbortmdum company has carried out the preparation of silicon carbide reaction-sintered since the seventies, reaction sintering mainly utilizes the silit biscuit of many voidages at high temperature to flood the liquid pasc reaction carborundum particle that condenses and processes.At present, typical reaction sintered sic goods mainly contain the Refel-SiC of Britain UKAEA and the KT-SiC of U.S. Carbortmdum company.But the free silica about 10% is arranged in the product of reaction sintering, and ability highly basic and hydrofluoric acid can not be applied in the Chemical Manufacture environment of strong acid and strong base; When temperature surpassed 1400 ℃, bending strength can sharply descend, and high temperature tolerance property is more weaker relatively, can not be used for the occasion strict to hot strength.From comprehensive mechanical property (comprising bending strength, fracture toughness property, Young's modulus, bending strength etc.), reaction-sintered ceramic product and hot pressed sintering more still have very big gap.Since the eighties of last century 70-80 age, people have carried out number of research projects and have hoped and can under non-pressurized condition, obtain high performance silicon carbide ceramics product by sintering.1974; S.Prochazka [the S.Prochazka of U.S. GE company; Ceramics for High-Performance Applications, 1974,239-252.] through in highly purified B-SiC fine powder, adding a spot of B and C simultaneously; Adopt non-pressure sintering technology, successfully obtained density in 2020 ℃ and be higher than 98% SiC sintered compact.After this, the countries in the world researchist has carried out a large amount of research, has screened different sintering aids, tries hard to when reducing sintering temperature, to keep the mechanical property of higher material.On the whole, pressureless sintering can be divided into solid state sintering and liquid phase sintering according to the state of selecting for use auxiliary agent in sintering process.S.Prochazka, J.A.Coppola, Joe J.Cao [CAO JOE J; MOBERLYCHAN WARREN J, LUTGARD C, et al.In Situ Toughened Silicon Carbide with Al-B-C Additions; J.Am.Ceram.Soc.; 1996,79 (2): 461-469.] etc. employing B, C and Al or its compound fused second do not occur mutually in sintering process, are known as solid state sintering.Solid-phase sintering method needs higher sintering temperature, and sintered product crystal grain is thick, and fracture toughness property is lower.H.Tanaka, M.A.Mulls, T.Ohji [T.Ohji, L. Jonghe, J.Am.Ceram.Soc., 1994,77:1685.] etc. added Al afterwards
2O
3-Y
2O
3, AIN-R
2O
3In sintering process, be called as liquid phase sintering Deng sintering aid through forming binary liquid phase eutectic mixture.Liquid phase sintering can obtain having preferably fracture toughness property and flexural strength and have complicated shape and large-sized silicon carbide components at lower sintering temperature, be considered to the most promising industriallization sintering method of high-performance silicon carbide pottery.Liquid phase sintering system, particularly SiC-Al
2O
3-Y
2O
3, become the focus of the research of silit sintering in recent years.Yet liquid phase sintering also has shortcoming, and at first liquid phase remains in crystal boundary as glassy phase, makes hot strength reduce the application scenario that can not satisfy some ultrahigh-temperature.Secondly cause easily that crystal grain grows up unusually and reduce mechanical property.At last, liquid sintering technology needs complicacy and the sintered precursor preparation technology of the poor efficiency obstacle that also to be this technology move towards the industrialization uses.Though there is the commercialization silicon carbide ceramics that presses solidly phase sintering at present Japanese special porcelain industry EC-422, EC-425, U.S. GE company, Shanghai silicate institute, U.S. Hexolog, U.S. Carborundum company, German PLS etc. are not arranged.But preparing production line, domestic and international industrialized liquid phase silicon carbide ceramics almost also do not have.So seeking the silicon carbide ceramics product that has better mechanical characteristic when better sintering aid has low sintering temperature with acquisition all is the key technical problem that faces at present.
The sintering aid that is adopted at present all is between the silit solid particulate, to form liquid phase merely at a lower temperature like [Tan Shouhong; The application number of Liao Lulin application is silicon carbide ceramics and the lqiuid phase sintering method thereof that 02111060.3 Chinese invention patent contains the synthetic C-B-Al compound phase of reaction] thus the spread coefficient that increases the silit atom reduces sintering temperature, can't avoid burning till that height temperature intensity is low, crystal grain is grown up unusually and complicated poor efficiency presoma preparation technology problem.
Summary of the invention
Technical problem to be solved by this invention is a kind of novel nanometer four component oxide sintering aids of employing that provide to existing background technology.This sintering aid is the more Al of silicon carbide ceramics sintering research by wherein two kinds
2O
3And Y
2O
3, under sintering temperature (1750 ℃-1850 ℃), Al
2O
3-Y
2O
3Form liquid phase YAG, make carbon and Siliciumatom can under this lesser temps, quicken diffusion and sintering.And other two kinds of components can form the higher catalytic removal of nox of fusing point in silicon carbide ceramics agglomerating later stage and vitreous state YAG in the mixed aid; Under sintering temperature, show solid-state, reduce the amount of lower melting point congruent melting YAG phase and improve the hot strength and the antioxidant property of silicon carbide ceramics in the sintering later stage on the one hand.Catalytic removal of nox is present in around the crystal boundary on the other hand, thereby suppresses the high temperature creep of grain growth, promotion pore eliminating inhibition silicon carbide ceramics.These two kinds of components are respectively nanometer MO (M is Mg, Ba, Be, a kind of among the Ca), L
2O
3(L is a REE, is La, Ce, a kind of among the Lu).This preparation method can reduce the sintering temperature of silicon carbide ceramics, makes its sintering physical efficiency have the high-temperature mechanical property suitable with hot pressed sintering again.Being particularly suitable under ultrahigh-temperature the HS in the severe rugged environment uses continuously.Like Fig. 2, Fig. 3 is respectively the X-ray diffracting spectrum of 1850 ℃ of sintered silicon carbide ceramics of novel nanometer four-component sintering additives that the present invention proposes and the contrast Al of same amount
2O
3-Y
2O
3Two component sintering aid silicon carbide ceramics X-ray diffracting spectrums.Visible from figure, the diffraction peak of four-component sintering additive ceramics sample is obviously wide than two component sintering aid samples, is illustrated in that growing up of crystal grain is restricted in the nanometer four-component sintering additives sintered ceramic body, in burning till body, still keeps less grain fineness number.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: these novel four component sintering of nano-material auxiliary agents prepare the preparation method of low-temperature sintering high performance silicon carbide ceramics; It is characterized in that main raw material 75-90wt% carborundum powder, 5-20wt% novel nano four component sintering aids, 1-5wt% wedding agent; Mix with the water of identical weight at normal temperatures and form suspension-s; Stir the back through electric mixer and in this suspension-s, insert large-power supersonic transducer; And make this ultrasonic generator discontinuous operation, apply the impulse ultrasound field to suspension-s.After ultrasonic pulse in 5-30 minute, suspension-s through super-dry, sieve, main technique steps such as moulding, curing, high temperature sintering, form the silicon carbide ceramics product.
Above-mentioned novel four component sintering of nano-material auxiliary agents are nanometer MO (M is Mg, Ba, Be, a kind of among the Ca), L
2O
3(L is a REE, is La, Ce, a kind of among the Lu), nanometer Al
2O
3, nanometer Y
2O
3Mixture, the weight percent that every kind of material accounts for whole sintering is between 0.1-0.7.These nano-oxides all can be bought on market and obtain, and can receive occasion company in Beijing like nano aluminium oxide and yttrium oxide and buy and obtain.Perhaps also can prepare voluntarily through methods such as collosol and gels.Very useful is under sintering temperature (1750 ℃-1850 ℃), Al
2O
3-Y
2O
3Form liquid phase YAG, make carbon and Siliciumatom can under this lesser temps, quicken diffusion and sintering.And MO, L
2O
3Two kinds of components can form the higher catalytic removal of nox of fusing point in silicon carbide ceramics agglomerating later stage and vitreous state YAG; Under sintering temperature, show solid-state, reduce the amount of lower melting point congruent melting YAG phase and improve the hot strength and the antioxidant property of silicon carbide ceramics in the sintering later stage.Catalytic removal of nox is present in around the crystal boundary on the other hand, thereby suppresses the high temperature creep of grain growth, promotion pore eliminating inhibition silicon carbide ceramics.The particle scale of the novel sintered auxiliary agent of this four component is below 300 nanometers in addition; Because the main body silicon carbide powder is micron-sized granularity; Differ greatly with the sintering aid granularity, sintering aid can be adsorbed onto main body carborundum powder surface through ultrasonic procedure and form parcel.Can in sintering process, form uniform thin layer of liquid like this, thereby accomplish the sintering process under the lesser temps with less amount of auxiliary at the silicon carbide powder particle surface.
Above-mentioned high-power ultrasound generator power range is 1000～2000 watts, the position of ultrasound probe under liquid level 3-5 centimetre.A recurrence interval is 3-5 second, and the duration of wherein working is 1-2 second, and free time length is 1-4 second.Very useful is that this ultrasonic generator is selected for use direct insertion; It can directly be distributed in high-strength ultrasonic wave field in the suspension-s; Help utilizing strong ultransonic cavitation and jet effect, rapidly the ceramics precursor powder is reached the reunion of very uniform admixture and tissue particles.Can avoid in the laboratory liquid phase sintering precursor powder to prepare and reach tens hours ball milling in the process under the organic solvent.
Above-mentioned silicon carbide powder is bought to the triumphant magnificent silicon carbide micro-powder in Weifang, Shandong ltd, through MalvernMastersizer2000 laser particle analyzer test median size about 10 microns, like Fig. 1.
Above-mentioned wedding agent can be a kind of among resol, the PVA (Z 150PH).
Above-mentioned moulding is that precursor powder is placed in the cylindrical die, under the pressure at 200-250MPa in high tonnage hydropress static 5 minutes again the demoulding obtain.
Above-mentioned high temperature sintering is under the condition of vacuum, temperature programming under minute-pressure Ar gas (0.10-0.13MPa) atmosphere protection, and below 1300 ℃ 5-8 ℃/minute, the temperature rise rate of temperature range is 10-15 ℃/minute more than 1300 ℃.Holding temperature is 1750 ℃-1850 ℃, is incubated to be 0.5-3 hour.After insulation finishes, continue to be incubated 20-40 minute with 5-8 ℃/minute 30-50 ℃ of speed temperature rising and under this temperature.The intensification of final stage that very useful is is and sintering later stage MO, L
2O
3Two kinds of components and vitreous state YAG form that the higher catalytic removal of nox of fusing point adapts, MO, L under this temperature
2O
3Can reduce the content of vitreous state lower melting point YAG greatly, thereby improve the mechanical behavior under high temperature of silicon carbide ceramics sintered compact.
Compared with prior art; The invention has the advantages that: adopt novel four component sintering of nano-material auxiliary agents; Their reasonable proportioning with form 1750 ℃-1850 ℃ of sintering temperatures can either reducing silicon carbide ceramics; Reduce its content through the sintering aid component in the reaction formation HMP spinel substances of sintering later stage and liquid phase component YAG again simultaneously, thereby improve the hot strength and the antioxidant property of silicon carbide ceramics; Thereby suppress grain growth, promote pore to get rid of the high temperature creep that suppresses silicon carbide ceramics.Can overcome the sintering temperature and low of liquid phase sintering silicon carbide ceramic and the contradiction between the dissatisfactory mechanical behavior under high temperature.Making it be particularly suitable under ultrahigh-temperature the HS in the severe rugged environment uses continuously.Thereby design through the sintering process temperature programming and large power supersonic prepare precursor powder can avoid long ball-milling technology can the basis be provided commercialization for liquid sintering technology.
Description of drawings
Fig. 1 is the particle size distribution figure of main body composition silicon carbide powder
Fig. 2 is a nanometer four-component sintering adjuvant silicon carbide ceramics x-ray diffraction pattern
Fig. 3 is same amount Al
2O
3-Y
2O
3Two component assistant sintered silicon carbide ceramics x-ray diffraction patterns
Embodiment
Below in conjunction with embodiment the present invention is described in further detail.
Embodiment 1: get nano-MgO: nanometer La
2O
3: nanometer Al
2O
3: nanometer Y
2O
3Mass ratio=0.15: 0.15: 0.3: 0.4 mixture (account for precursor powder total mass 10%) and 88wt% carborundum powder, 2wt% resol, mix with the water of identical weight and form suspension-s at normal temperatures; Stir after 5 minutes through electric mixer and in this suspension-s, to insert the 1000W large-power supersonic transducer, the position of ultrasound probe under liquid level 3 centimetres.Start ultra-sonic generator, a recurrence interval is 3 seconds, and the duration of wherein working is 2 seconds, and free time length is 1 second, works 20 minutes.With the suspension filtered that obtains, in the following drying 2 hours of 80 degree, after pulverizing, sieving, under 230Mpa, leave standstill in the cylindrical die of packing into and obtained biscuit in 5 minutes.Biscuit 250 ℃ of thermal treatments 20 minutes, is removed wedding agent.Biscuit is placed on is evacuated down to vacuum tightness 4-5Pa in the vacuum carbon tube furnace, the conversion argon gas is to pressure-fired 0.12MPa.The design temperature unit makes the temperature in the furnace chamber rise to 1300 ℃ with 5 ℃/minute, rises to 1800 ℃ with 10 ℃/minute speed then, 1800 ℃ of insulations 1 hour down.Continuation raises 1830 ℃ and at the closing temperature unit after 30 minutes of insulation under this temperature with 5 ℃/minute speed temperature, naturally cools to normal temperature with stove and is silicon carbide ceramics and burns till body.
Embodiment 2: get nanometer CaO: nano Ce
2O
3: nanometer Al
2O
3: nanometer Y
2O
3Mass ratio=0.2: 0.2: 0.4: 0.2 mixture (account for precursor powder total mass 5%) and 90wt% carborundum powder, 5wt% resol, mix with the water of identical weight and form suspension-s at normal temperatures; Stir after 5 minutes through electric mixer and in this suspension-s, to insert the 1500W large-power supersonic transducer, the position of ultrasound probe under liquid level 3 centimetres.Start ultra-sonic generator, a recurrence interval is 5 seconds, and the duration of wherein working is 2 seconds, and free time length is 3 seconds, works 20 minutes.With the suspension filtered that obtains, in the following drying 2 hours of 80 degree, after pulverizing, sieving, under 250Mpa, leave standstill in the cylindrical die of packing into and obtained biscuit in 5 minutes.Biscuit 250 ℃ of thermal treatments 20 minutes, is removed wedding agent.Biscuit is placed on is evacuated down to vacuum tightness 4-5Pa in the vacuum carbon tube furnace, the conversion argon gas is to pressure-fired 0.12MPa.The design temperature unit makes the temperature in the furnace chamber rise to 1300 ℃ with 5 ℃/minute, rises to 1830 ℃ with 10 ℃/minute speed then, 1830 ℃ of insulations 1.5 hours down.Continuation raises 1860 ℃ and at the closing temperature unit after 20 minutes of insulation under this temperature with 5 ℃/minute speed temperature, naturally cools to normal temperature with stove and is silicon carbide ceramics and burns till body.
Embodiment 3: get nanometer BaO: nanometer Lu
2O
3: nanometer Al
2O
3: nanometer Y
2O
3Mass ratio=0.3: 0.3: 0.2: 0.2 mixture (account for precursor powder total mass 15%) and 83wt% carborundum powder, 2wt%PVA, mix with the water of identical weight and form suspension-s at normal temperatures; Stir after 5 minutes through electric mixer and in this suspension-s, to insert the 2000W large-power supersonic transducer, the position of ultrasound probe under liquid level 3 centimetres.Start ultra-sonic generator, a recurrence interval is 5 seconds, and the duration of wherein working is 2 seconds, and free time length is 3 seconds, works 20 minutes.With the suspension filtered that obtains, in the following drying 2 hours of 80 degree, after pulverizing, sieving, under 250Mpa, leave standstill in the cylindrical die of packing into and obtained biscuit in 5 minutes.Biscuit 250 ℃ of thermal treatments 20 minutes, is removed wedding agent.Biscuit is placed on is evacuated down to vacuum tightness 4-5Pa in the vacuum carbon tube furnace, the conversion argon gas is to pressure-fired 0.12MPa.The design temperature unit makes the temperature in the furnace chamber rise to 1300 ℃ with 7 ℃/minute, rises to 1850 ℃ with 13 ℃/minute speed then, 1850 ℃ of insulations 1.5 hours down.Continuation raises 1900 ℃ and at the closing temperature unit after 20 minutes of insulation under this temperature with 7 ℃/minute speed temperature, naturally cools to normal temperature with stove and is silicon carbide ceramics and burns till body.
Claims (4)
1. method of utilizing nanometer four component oxide sintering aids to prepare silicon carbide ceramics; It is characterized in that: 75-90wt% carborundum powder, 5-20wt% nanometer four component oxide sintering aid 1-5wt% wedding agents are mixed at normal temperatures forming suspension-s with the water of identical weight; Stir the back through electric mixer and in this suspension-s, insert high-power ultrasound generator, and make this high-power ultrasound generator discontinuous operation, apply the impulse ultrasound field to suspension-s; Time 5-30 minute; Suspension-s through super-dry, sieve, moulding, curing, high temperature sintering, form the silicon carbide ceramics product
Wherein the particle scale of nanometer four component oxide sintering aids is below 300 nanometers, and said carborundum powder is micron granularity, and nanometer four component oxide sintering aids are nanometer MO, nanometer L
2O
3, nanometer Al
2O
3With nanometer Y
2O
3Mixture, the part by weight that every kind of material accounts for whole nanometer four component oxide sintering aids is between 0.1-0.7, wherein M is a kind of among Mg, Ba, Be and the Ca, L is a kind of among rare-earth elements La, Ce and the Lu,
Two kinds in the nanometer four component oxide sintering aids is Al
2O
3And Y
2O
3, under 1750 ℃ of-1850 ℃ of sintering temperatures, Al
2O
3-Y
2O
3Form liquid phase YAG, make carbon and Siliciumatom can under this lesser temps, quicken diffusion and sintering; And the other two kinds of components in the nanometer four component oxide sintering aids can form the higher catalytic removal of nox of fusing point in silicon carbide ceramics sintering later stage and vitreous state YAG; Under sintering temperature, show solid-state, reduce the amount of lower melting point congruent melting YAG phase and improve the hot strength and the antioxidant property of silicon carbide ceramics in the sintering later stage on the one hand; Catalytic removal of nox is present in around the crystal boundary on the other hand, thereby suppresses the high temperature creep of grain growth, promotion pore eliminating inhibition silicon carbide ceramics.
2. method according to claim 1; It is characterized in that said high-power ultrasound generator power range is 1000～2000 watts, the position of ultrasound probe under liquid level 3-5 centimetre, a recurrence interval is 3-5 second; The duration of wherein working is 1-2 second, and free time length is 1-4 second.
3. method according to claim 1 is characterized in that wedding agent is a kind of in resol, the Z 150PH.
4. method according to claim 1 is characterized in that high temperature sintering is under the condition of vacuum, temperature programming under the minute-pressure Ar of 0.10-0.13MPa gas atmosphere protection; Below 1300 ℃ 5-8 ℃/minute; The temperature rise rate of temperature range is 10-15 ℃/minute more than 1300 ℃, and holding temperature is 1750 ℃-1850 ℃, is incubated to be 0.5-3 hour; After insulation finishes, continue to be incubated 20-40 minute with 5-8 ℃/minute 30-50 ℃ of speed temperature rising and under this temperature.
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| CN101081738A (en) * | 2006-05-29 | 2007-12-05 | 宁波大学 | Silicon carbide ceramic production technology by using prefabricated YAG nano powder as sintering aid |
| CN101182211A (en) * | 2007-11-09 | 2008-05-21 | 浙江大学 | Nano silicon carbide ceramic and preparation method thereof |
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| CN101081738A (en) * | 2006-05-29 | 2007-12-05 | 宁波大学 | Silicon carbide ceramic production technology by using prefabricated YAG nano powder as sintering aid |
| CN101182211A (en) * | 2007-11-09 | 2008-05-21 | 浙江大学 | Nano silicon carbide ceramic and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Z.H. Huang et al."A new sintering additive for silicon carbide ceramic".《Ceramics International》.2003,第29卷13–17. |
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