CN101753052B - Pulse width modulating switch power source and power supply control method thereof - Google Patents
Pulse width modulating switch power source and power supply control method thereof Download PDFInfo
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- CN101753052B CN101753052B CN 200810227940 CN200810227940A CN101753052B CN 101753052 B CN101753052 B CN 101753052B CN 200810227940 CN200810227940 CN 200810227940 CN 200810227940 A CN200810227940 A CN 200810227940A CN 101753052 B CN101753052 B CN 101753052B
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Abstract
The invention provides a pulse width modulating PWM switch power source which solves the problem that the efficiency of a PWM power source in the prior art is locally optimized. The switch power source comprises a pulse width modulating PWM controller and MOSFET group, wherein the MOSFET group also comprises at least one controlled MOSFET, and the at least one controlled MOSFET is connected with a first MOSFET or a second MOSFET in parallel; and the pulse width modulating PWM switch power source also comprises a state control module which controls the working condition of the at least one controlled MOSFET according to the control parameter to convert the first working condition of the MOSFET group to the second working condition, thus lowering the total power loss of the MOSFET group. The invention improves the switch power source efficiency and realizes overall optimal efficiency.
Description
Technical field
The present invention relates to the switch power technology field, particularly a kind of pulse width modulating switch power source and method for controlling power supply thereof.
Background technology
Along with the development of chip manufacturing process, increasing Switching Power Supply uses PWM (Pulse WideModulation, pulse width modulation) to realize.
Use the Switching Power Supply of PWM realization as shown in Figure 1, comprising:
The PWM controller generates the first pwm signal and second pwm signal anti-phase with described the first pwm signal;
The one MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) and the 2nd MOSFET, the grid of a described MOSFET and the 2nd MOSFET receives respectively described the first pwm signal and the second pwm signal, and the first terminal of a described MOSFET and power input sub-connection, the second terminal of described the 2nd MOSFET is connected with earth terminal, and the second terminal of a described MOSFET is connected with the first terminal of described the 2nd MOSFET;
Inductance, an end is connected with output port of power source VOUT, and the other end connects the second terminal of a described MOSFET and the first terminal of described the 2nd MOSFET;
Electric capacity, an end ground connection, the other end is connected on the passage between described inductance and the described output port of power source VOUT;
Yet, when load is larger, Switching Power Supply shown in Figure 1 has the larger defective of conduction loss of load area, therefore, for the larger Switching Power Supply of load, in order to reduce the conduction loss of above-mentioned Switching Power Supply, increase by one group of MOSFET on the basis of PWM Switching Power Supply shown in Figure 1, as shown in Figure 2.
For Fig. 1, also comprise the 3rd MOSFET in parallel with a MOSFET and the 2nd MOSFET respectively and the 4th MOSFET in the PWM Switching Power Supply of Fig. 2, wherein:
The grid of described the 3rd MOSFET and the 4th MOSFET receives respectively described the first pwm signal and the second pwm signal, and the first terminal of a described MOSFET and power input sub-connection, the second terminal of described the 2nd MOSFET is connected with earth terminal, and the second terminal of a described MOSFET is connected with the first terminal of described the 2nd MOSFET;
The other end of described inductance is also connected to the second terminal of described the 3rd MOSFET and the first terminal of described the 4th MOSFET.
In the above description, the first terminal of the one MOSFET might be source electrode, it also might be drain electrode, and the first terminal of the 2nd MOSFET might be source electrode, it also might be drain electrode, the channel type of this and MOSFET is relevant, and this point is well known to those skilled in the art, and is not described in detail at this.
The inventor finds in realizing the process of the embodiment of the invention, and there is following shortcoming at least in the PWM Switching Power Supply of prior art:
The PWM Switching Power Supply is in the situation that high capacity, the PWM Switching Power Supply of MOSEFT parallel way, can cause the increase of parasitic capacitance, strengthen the switch energy loss, but because the conduction energy loss is occupied an leading position, and the PWM Switching Power Supply of MOSEFT parallel way can effectively reduce the conduction energy loss, so can improve power-efficient, yet, for low load, in the energy loss of PWM Switching Power Supply, the switch energy loss is occupied an leading position, although the PWM Switching Power Supply of MOSEFT parallel way has reduced the conduction energy loss at this moment, but strengthened the switch energy loss, and because the switch energy loss is in leading position, so the PWM Switching Power Supply of MOSEFT parallel way is being hanged down under the loading condition, power-efficient is lower.
And adopt the PWM Switching Power Supply of single MOSFET in the situation that the high capacity power-efficient is lower.
Yet generally speaking, in case the Switching Power Supply complete design, line construction is just fixing, but power source loads do not stop to change, so the power-efficient of existing PWM Switching Power Supply is a local optimum, does not realize global optimization.
Summary of the invention
The purpose of the embodiment of the invention provides a kind of pulse width modulating switch power source and method for controlling power supply thereof, improves the whole power-efficient of PWM Switching Power Supply.
To achieve these goals, the embodiment of the invention provides a kind of pulse width modulating switch power source, comprising:
The pulse-width modulation PWM controller is used for generating the first pwm signal and second pwm signal anti-phase with described the first pwm signal, and exports described the first pwm signal and the second pwm signal;
Mos field effect transistor MOSFET group, described MOSFET group comprises a MOSFET and the 2nd MOSFET, the grid of a described MOSFET is used for receiving described the first pwm signal, and the grid of described the 2nd MOSFET is used for receiving described the second pwm signal;
Inductance, an end is connected with output port of power source, and the other end is connected with the 2nd MOSFET with a described MOSFET;
Electric capacity, an end ground connection, the other end is connected on the passage between described inductance and the described output port of power source;
Described MOSFET group also comprises at least one controlled MOSFET, and each described at least one controlled MOSFET is in parallel with a described MOSFET or the 2nd MOSFET;
Described pulse width modulating switch power source also comprises status control module, described status control module is used for the operating state according to described at least one the controlled MOSFET of control parameter control, make described MOSFET group change into the second operating state from the first operating state, under described the second operating state, the total-power loss of described MOSFET group is less than the total-power loss of described MOSFET group under described the first operating state.
Above-mentioned pulse width modulating switch power source, wherein, the grid of the MOSFET in parallel with a described MOSFET is used for receiving described the first pwm signal among described at least one controlled MOSFET, one and described power input sub-connection in two other terminal, another is connected with the other end of described inductance.
Above-mentioned pulse width modulating switch power source, wherein, the grid of the MOSFET in parallel with described the 2nd MOSFET is used for receiving described the second pwm signal among described at least one controlled MOSFET, and in two other terminal one is connected with the other end of described inductance, and another is connected with earth terminal.
Above-mentioned pulse width modulating switch power source, wherein, described control parameter is load, load current or user's input of control commands.
Above-mentioned pulse width modulating switch power source, wherein, described status control module specifically comprises:
With described at least one controlled MOSFET state control switch of corresponding setting one by one, each described state control switch is arranged at the grid of corresponding MOSFET;
On-off control unit is used for controlling according to described control parameter conducting and the disconnection of described state control switch.
Above-mentioned pulse width modulating switch power source, wherein, when described control parameter was load, described on-off control unit specifically comprised:
The first acquiring unit is used for according to the load of pre-save and the corresponding relation between the total-power loss, obtains described MOSFET and organizes when being in described the first operating state the current total power loss that present load is corresponding;
The first selected cell is used for selecting described the second operating state from all possible operating state of described MOSFET group, and when described MOSFET group was in described the second operating state, total-power loss corresponding to present load was less than described current total power loss;
The first switch control unit is used for controlling described state control switch, makes the operating state of described MOSFET group change into described the second operating state.
Above-mentioned pulse width modulating switch power source, wherein, when described control parameter was load current, described on-off control unit specifically comprised:
Second acquisition unit is used for according to the load current of pre-save and the corresponding relation between the total-power loss, obtains described MOSFET and organizes when being in described the first operating state the current total power loss that the present load electric current is corresponding;
The second selected cell, the all possible operating state that is used for described MOSFET group, select described the second operating state, when described MOSFET group was in described the second operating state, total-power loss corresponding to present load electric current was less than described current total power loss;
The second switch control unit is used for controlling described state control switch, makes the operating state of described MOSFET group change into described the second operating state.
Above-mentioned pulse width modulating switch power source, wherein, in all possible operating state of described MOSFET group, when described MOSFET group is in described the second operating state, the total-power loss minimum that present load is corresponding.
Above-mentioned pulse width modulating switch power source, wherein, when described control parameter was user's input of control commands, described on-off control unit specifically comprised:
Extraction unit extracts the operating state that the described MOSFET in described user's input of control commands organizes;
The 3rd switch control unit is used for controlling described state control switch, and the operating state that described MOSFET is organized is changed into the operating state in described user's input of control commands.
Above-mentioned pulse width modulating switch power source wherein, also comprises:
Temperature control modules, be used for when the Current Temperatures of in running order MOSFET exceeds the preset temperature threshold value, it is in parallel that control and described Current Temperatures exceed the MOSFET of preset temperature threshold value, and be at least one MOSFET unlatching among the MOSFET of closed condition.
To achieve these goals, the embodiment of the invention also provides a kind of method for controlling power supply of pulse width modulating switch power source, described pulse width modulating switch power source comprises mos field effect transistor MOSFET group, described MOSFET group comprises a MOSFET, the 2nd MOSFET and the controlled MOSFET that at least one is in parallel with a described MOSFET or the 2nd MOSFET, and described method comprises:
According to the control parameter of pre-save and the corresponding relation between the total-power loss, obtain described MOSFET group under the first operating state, the current total power loss that current control parameter is corresponding;
From all possible operating state of described MOSFET group, select the second operating state, described MOSFET group is under described the second operating state, and total-power loss corresponding to present load electric current is less than described current total power loss;
Control the operating state of described MOSFET group and change into described the second operating state from described the first operating state.
Above-mentioned method, wherein, described control parameter is load, load current or user's input of control commands.
Above-mentioned method, wherein, described at least one controlled MOSFET one by one correspondence is provided with state control switch, controls the change of the operating state of described MOSFET group by controlling described state control switch.
Above-mentioned method wherein, also comprises:
When the Current Temperatures of in running order MOSFET exceeded the preset temperature threshold value, it is in parallel that control and described Current Temperatures exceed the MOSFET of preset temperature threshold value, and be at least one MOSFET unlatching among the MOSFET of closed condition.
The embodiment of the invention has following beneficial effect:
In the apparatus and method of the embodiment of the invention, when being 3 or above situation for MOSFET, one status control module is set, by the variation of status control module according to the operating state of control parameter control MOSFET group, thereby the total-power loss of described MOSFET group has improved the service efficiency of power supply effectively less than the total-power loss of described MOSFET group under described the first operating state;
Simultaneously, because control module is carried out the change of the operating state of MOSFET group according to the variation of external parameter, power supply can be adjusted according to the variation of load, realized the global optimization of power supply service efficiency;
Simultaneously, when finding when the Current Temperatures of in running order MOSFET exceeds the preset temperature threshold value, control is in parallel with the MOSFET that described Current Temperatures exceeds the preset temperature threshold value, and at least one MOSFET that is among the MOSFET of closed condition opens, to reduce total conducting resistance, so that the conduction loss after the parallel connection (or claiming conduction loss) less than the conduction loss before the control, reduces device temperature, guaranteed the use safety of device.
Description of drawings
Fig. 1 is the structural representation that uses the Switching Power Supply of PWM realization in the prior art;
Fig. 2 is the structural representation of the PWM Switching Power Supply of MOSEFT parallel way in the prior art;
Fig. 3 is the structural representation of the PWM Switching Power Supply of the embodiment of the invention one;
Fig. 4 is the structural representation of the PWM Switching Power Supply of the embodiment of the invention two;
Fig. 5 is the structural representation of the PWM Switching Power Supply of the embodiment of the invention three;
Fig. 6 is the schematic flow sheet of the method for the embodiment of the invention.
Embodiment
In the pulse width modulating switch power source and method for controlling power supply thereof of the embodiment of the invention, obtain the judgement parameter of power source loads, and control the operating state of the 3rd MOSFET and the 4th MOSFET according to the judgement parameter of power source loads, improve the power-efficient of the PWM Switching Power Supply of MOSEFT parallel way.
The loss that produces among the MOSFET mainly comprises following two classes:
The conduction loss that the conducting resistance RDS of MOSFET (on) causes (or claiming conduction loss); With
MOSFET conducting and shutdown moment under certain gate source voltage, carry out the switching loss (or claiming gate drive loss) that charging and discharging causes to the interelectrode capacitance of MOSFET.
Certainly, also have other losses among the MOSFET, but relatively conduction loss and switching loss can be ignored substantially, therefore, only consider conduction loss and switching loss in specific embodiments of the invention.
Simultaneously, relate to following concept in the embodiment of the invention, illustrate first as follows:
The MOSFET operating state comprises two kinds, and opening and closed condition are equivalent to negative load condition (grid has the driving signal) and without driving condition (grid does not drive signal);
The MOSFET group, all MOSFET in the power supply form the MOSFET group.
The operating state of MOSFET group, the state of any one MOSFET in the MOSFET group change and all can cause the operating state of MOSFET group to change.
The below is elaborated respectively to device and method of the present invention with different embodiment.
＜embodiment one 〉
In embodiment one, with pipe on the MOSFET formation of two parallel connections, and the situation of lower Guan Weiyi MOSFET is elaborated.
The pulse width modulating switch power source of the embodiment of the invention one comprises as shown in Figure 3:
The PWM controller is used for generating and generating the first pwm signal and second pwm signal anti-phase with described the first pwm signal, and exports the first pwm signal and the second pwm signal;
The MOSFET group comprises a MOSFET, the 2nd MOSFET and the 3rd MOSFET;
The one MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) and the 2nd MOSFET, the grid of a described MOSFET and the 2nd MOSFET receives respectively described the first pwm signal and the second pwm signal, and (namely the grid of a MOSFET is used for receiving described the first pwm signal, the grid of the 2nd MOSFET is used for receiving described the second pwm signal), and the first terminal of a described MOSFET and power input sub-connection, the second terminal of described the 2nd MOSFET is connected with earth terminal, and the second terminal of a described MOSFET is connected with the first terminal of described the 2nd MOSFET;
Inductance, an end is connected with output port of power source VOUT, the second terminal of the other end and a described MOSFET be connected the first terminal of the 2nd MOSFET and be connected;
Electric capacity, an end ground connection, the other end is connected on the passage between described inductance and the described output port of power source VOUT;
The 3rd MOSFET, the grid of described the 3rd MOSFET receive described the first pwm signal, and the first terminal of described the 3rd MOSFET and power input sub-connection, and the second terminal of described the 3rd MOSFET is connected with the other end of described inductance;
The first status control module is for the operating state of controlling described the 3rd MOSFET according to the control parameter;
Described the 3rd MOSFET is controlled by described the first control module, change to the second operating state from the first operating state, when described the 3rd MOSFET is in the first operating state, described MOSFET group (comprising a MOSFET, the 2nd MOSFET and the 3rd MOSFET) has the first total-power loss, when described the 3rd MOSFET was in the second operating state, described MOSFET group (comprised that a MOSFET, the 2nd MOSFET and the 3rd MOSFET have the second total-power loss less than described the first total-power loss.
Just as described in the background art, at this, the first terminal that forms 3 MOSFET of MOSFET group might be identical terminal, as all being drain electrode, source electrode, also may be different, and relevant with the type selecting of MOSFET.
Wherein the operating state of MOSFET just comprises two kinds: operating state and halted state.
The first control module of first embodiment of the invention can realize in the following way.
The first control module comprises:
The first switch is arranged at the grid of described the 3rd MOSFET;
The first on-off control unit is for the break-make of controlling described the 3rd switch according to the control parameter.
Simultaneously, in specific embodiments of the invention one, need the operating state of described the 3rd MOSFET of control, to reduce the total-power loss of all MOSFET, in specific embodiment one, can realize by following mode:
＜mode one is controlled according to loading condition 〉
For mode one, this control parameter is present load.
In case after the type selecting of MOSFET was determined, for the situation of embodiment one, wherein, for all MOSFET of power supply, the operating state of MOSFET group comprises two kinds of situations, and was as follows:
State A1, the first and second MOSFET are in opening, and the 3rd MOSFET is in opening; With
State A2, the first and second MOSFET are in opening, and the 3rd MOSFET is in closed condition.
At first under off-line test and preservation state A1 and the state A2, the total-power loss of all MOSFET and the relation curve between the load.
When working control, the first on-off control unit obtains present load, according to the relation curve between total-power loss and the load, obtain respectively current total power loss A11 corresponding to the state A1 of MOSFET group and the current total power loss A21 corresponding to state A2 of MOSFET group, at this moment, the control action of the first control unit is as described below:
Suppose MOSFET group state A1, at this moment, if total-power loss A11 is less than or equal to current total power loss A21, then remain unchanged, otherwise control MOSFET group is in state A2, namely controls the first switch and disconnects.
Suppose MOSFET group state A2, at this moment, if total-power loss A11 is less than or equal to current total power loss A21, then controls the MOSFET group and be in state A1, namely control the first switch open, otherwise remain unchanged.
＜mode two is controlled according to foreign current 〉
In case after the type selecting of MOSFET was determined, for the situation of embodiment one, wherein, for power source integral, the operating state of MOSFET group comprises two kinds of situations, and was as follows:
State A1, the first and second MOSFET are in opening, and the 3rd MOSFET is in opening; With
State A2, the first and second MOSFET are in opening, and the 3rd MOSFET is in closed condition.
At first under off-line test and preservation state A1 and the state A2, the total-power loss of all MOSFET and the relation curve between the load current.
When working control, the first on-off control unit obtains the present load electric current, according to the relation curve between total-power loss and the load current, obtain respectively current total power loss A11 corresponding to the state A1 of MOSFET group and the current total power loss A21 corresponding to state A2 of MOSFET group, at this moment, the control action of the first control unit is as described below:
Suppose that the MOSFET group is in state A1, at this moment, if total-power loss A11 is less than or equal to current total power loss A21, then remain unchanged, otherwise control MOSFET group is in state A2, namely controls the first switch and disconnects.
Suppose that the MOSFET group is in state A2, at this moment, if total-power loss A11 is less than or equal to current total power loss A21, then controls the MOSFET group and be in state A1, namely control the first switch open, otherwise remain unchanged.
Under the control of above-mentioned mode one and mode two, really can reduce total-power loss, yet the conduction loss that the conducting resistance RDS of MOSFET (on) causes (or claiming conduction loss) can cause the temperature of MOSFET to raise, each MOSFET has its highest temperature that can bear, therefore, the operating state of the embodiment of the invention is switched also needs to take into account temperature simultaneously, and therefore, this first control module also comprises:
The first temperature control unit, when the Current Temperatures of a described MOSFET exceeds the preset temperature threshold value, and described the first switch is controlled described the first switch conduction when not having conducting.
By above-mentioned control, because the Current Temperatures of a MOSFET exceeds the preset temperature threshold value, at this moment, control the first switch conduction, this moment the one MOSFET and the 3rd MOSFET co-operation, a MOSFET and the 3rd MOSFET are in parallel, total conducting resistance RDS (on) is less than the conducting resistance of a MOSFET, so the conduction loss after the parallel connection (or claiming conduction loss) is inevitable less than the conduction loss before the control, also will be so that the temperature reduction.
＜mode three is according to user input instruction control 〉
In case after the type selecting of MOSFET was determined, for the situation of embodiment one, wherein, for power source integral, the operating state of MOSFET group comprises two kinds of situations, and was as follows:
State A1, the first and second MOSFET are in opening, and the 3rd MOSFET is in opening; With
State A2, the first and second MOSFET are in opening, and the 3rd MOSFET is in closed condition.
At this moment, according to the conversion of user's outside input instruction between can state of a control, namely extract the MOSFET group operating state in the user input instruction, and control switch, make the MOSFET group be in MOSFET group operating state in the instruction.
＜embodiment two 〉
In embodiment two, with pipe on the MOSFET formation of two parallel connections, the situation that the MOSFET of two parallel connections consists of lower pipe is elaborated.
The pulse width modulating switch power source of the embodiment of the invention two comprises as shown in Figure 4:
The PWM controller is used for generating and generating the first pwm signal and second pwm signal anti-phase with described the first pwm signal, and exports the first pwm signal and the second pwm signal;
The MOSFET group comprises a MOSFET, the 2nd MOSFET, the 3rd MOSFET and the 4th MOSFET;
The one MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) and the 2nd MOSFET, the grid of a described MOSFET and the 2nd MOSFET receives respectively described the first pwm signal and the second pwm signal, and the first terminal of a described MOSFET and power input sub-connection, the second terminal of described the 2nd MOSFET is connected with earth terminal, and the second terminal of a described MOSFET is connected with the first terminal of described the 2nd MOSFET;
Inductance, an end is connected with output port of power source VOUT, the second terminal of the other end and a described MOSFET be connected the first terminal of the 2nd MOSFET and be connected;
Electric capacity, an end ground connection, the other end is connected on the passage between described inductance and the described output port of power source VOUT;
The 3rd MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) and the 4th MOSFET, the grid of described the 3rd MOSFET and the 4th MOSFET receives respectively described the first pwm signal and the second pwm signal, and the first terminal of described the 3rd MOSFET and power input sub-connection, the second terminal of described the 4th MOSFET is connected with earth terminal, and the second terminal of described the 3rd MOSFET is connected with the first terminal of described the 4th MOSFET;
The second status control module is used for controlling according to the control parameter at least one the operating state of described the 3rd MOSFET and the 4th MOSFET;
The operating state of at least one among described the 3rd MOSFET and the 4th MOSFET is controlled by described the first control module, before operating state changes, all MOSFET have the 3rd total-power loss, after operating state changed, all MOSFET had the 4th total-power loss less than described the 3rd total-power loss.
Wherein the operating state of MOSFET just comprises two kinds: operating state and halted state.
The second status control module of second embodiment of the invention can realize in the following way.
The second status control module comprises:
Second switch is arranged at the grid of described the 3rd MOSFET;
The 3rd switch is arranged at the grid of described the 4th MOSFET;
The second on-off control unit is for the break-make of controlling described the 3rd switch and the 4th switch according to the control parameter.
Simultaneously, in the specific embodiments of the invention ear, need the operating state of described the 3rd MOSFET of control and the 4th MOSFET, to reduce the total-power loss of all MOSFET, in specific embodiment two, can realize by following mode:
＜mode one is controlled according to loading condition 〉
For mode one, this control parameter is present load.
In case after the type selecting of MOSFET was determined, for the situation of embodiment two, wherein, the operating state of MOSFET group comprises two kinds of operative scenario, and was as follows:
State B1, the first and second MOSFET are in opening, and the 3rd MOSFET and the 4th MOSFET are in opening;
State B2, the first and second MOSFET are in opening, and the 3rd MOSFET is in opening, and the 4th MOSFET is in closed condition;
State B3, the first and second MOSFET are in opening, and the 3rd MOSFET is in closed condition, and the 4th MOSFET is in opening;
State B4, the first and second MOSFET are in opening, and the 3rd MOSFET and the 4th MOSFET are in closed condition.
At first under off-line test and preservation state B1, B2, B3 and the B4, the total-power loss of all MOSFET and the relation curve between the load.
When working control, the second on-off control unit obtains present load, according to the relation curve between total-power loss and the load, obtains respectively state B1, B2, B3 and B4 corresponding total-power loss B11, B21, B31 and B41, at this moment, the control action of the second on-off control unit is as described below:
At first, obtain current total power loss under the work at present state of MOSFET group;
From B11, B21, B31 and B41, select the value less than the current total power loss;
With the working state control of MOSFET group for select less than any one the corresponding MOSFET group operating state in the value of current total power loss, certainly, MOSFET group operating state corresponding to minimum value in the value of the control power supply is in selection that best is.
For the control of state, control by switch, such as control second switch and the 3rd switch conduction, make the MOSFET group be in state B1, control second switch and the 3rd switch opens make the MOSFET group be in state B4.
＜mode two is controlled according to foreign current 〉
In case after the type selecting of MOSFET was determined, for the situation of embodiment two, wherein, for power source integral, the operating state of MOSFET group comprises two kinds of operative scenario, and was as follows:
State B1, the first and second MOSFET are in opening, and the 3rd MOSFET and the 4th MOSFET are in opening;
State B2, the first and second MOSFET are in opening, and the 3rd MOSFET is in opening, and the 4th MOSFET is in closed condition;
State B3, the first and second MOSFET are in opening, and the 3rd MOSFET is in closed condition, and the 4th MOSFET is in opening;
State B4, the first and second MOSFET are in opening, and the 3rd MOSFET and the 4th MOSFET are in closed condition.
At first under off-line test and preservation state B1, B2, B3 and the B4, the total-power loss of all MOSFET and the relation curve between the load current.
When working control, the second on-off control unit obtains the present load electric current, according to the relation curve between total-power loss and the load current, obtain respectively state B1, B2, B3 and B4 corresponding current total power loss B11, B21, B31 and B41, at this moment, the control action of the second on-off control unit is as described below:
According to the present load electric current, obtain the current total power loss under the work at present state of MOSFET group;
From B11, B21, B31 and B41, select the value less than the current total power loss;
With the working state control of MOSFET group for select less than any one the corresponding MOSFET group operating state in the value of current total power loss, certainly, MOSFET group operating state corresponding to minimum value in the value of the control power supply is in selection that best is.
For the control of MOSFET group operating state, control by switch, such as control second switch and the 3rd switch conduction, make the MOSFET group be in state B1, control second switch and the 3rd switch opens make the MOSFET group be in state B4.
Under the control of above-mentioned mode one and mode two, its processing of tabling look-up in real time, the control of acknowledgement state, switching, can certainly be according under all MOSFET group operating state B1, B2, B3 and the B4, relation curve between total-power loss and the control parameter, obtain the MOSFET group operating state of total-power loss minimum under each control parameter, then, obtain current control parameter, and then the MOSFET group operating state of obtaining the total-power loss minimum corresponding with current control parameter gets final product, and is basic identical with the realization principle of real-time calculating.
Under the control of above-mentioned mode one and mode two, really can reduce total-power loss, yet the conduction loss that the conducting resistance RDS of MOSFET (on) causes (or claiming conduction loss) can cause the temperature of MOSFET to raise, each MOSFET has its highest temperature that can bear, therefore, the operating state of the embodiment of the invention is switched also needs to take into account temperature simultaneously, and therefore, this second status control module also comprises:
The second temperature control unit, when the Current Temperatures of a described MOSFET exceeds the preset temperature threshold value, and when described the first switch does not have conducting, control described second switch conducting, and when the Current Temperatures of described the 2nd MOSFET exceeds the preset temperature threshold value, and when described the 3rd switch does not have conducting, control described the 3rd switch conduction.
By above-mentioned control, because the Current Temperatures of a MOSFET exceeds the preset temperature threshold value, at this moment, control the first switch conduction, this moment the one MOSFET and the 3rd MOSFET co-operation, the one MOSFET and the 3rd MOSFET are in parallel, total conducting resistance RDS (on) is less than the conducting resistance of a MOSFET, so the conduction loss after the parallel connection (or claiming conduction loss) is inevitable less than the conduction loss before the control, also will be so that the temperature reduction, also be same reason for the 2nd MOSFET, can reduce working temperature.
＜mode three is according to user input instruction control 〉
In case after the type selecting of MOSFET was determined, for the situation of embodiment two, wherein, for power source integral, the operating state of MOSFET group comprises two kinds of operative scenario, and was as follows:
State B1, the first and second MOSFET are in opening, and the 3rd MOSFET and the 4th MOSFET are in opening;
State B2, the first and second MOSFET are in opening, and the 3rd MOSFET is in opening, and the 4th MOSFET is in closed condition;
State B3, the first and second MOSFET are in opening, and the 3rd MOSFET is in closed condition, and the 4th MOSFET is in opening;
State B4, the first and second MOSFET are in opening, and the 3rd MOSFET and the 4th MOSFET are in closed condition.
At this moment, can control the conversion of the operating state of MOSFET group according to user's outside input instruction, to reduce total-power loss.
＜embodiment three 〉
In embodiment three, with pipe on the MOSFET formation of at least three parallel connections, the situation that the MOSFET of at least three parallel connections consists of lower pipe is elaborated.
The pulse width modulating switch power source of the embodiment of the invention three is considered the succinct of figure as shown in Figure 5, and the FET among the figure represents MOSFET, comprising:
The PWM controller is used for generating and generating the first pwm signal and second pwm signal anti-phase with described the first pwm signal, and exports the first pwm signal and the second pwm signal;
The MOSFET group comprises a MOSFET, the 2nd MOSFET, MOSFET set and the 2nd MOSFET set;
The one MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) and the 2nd MOSFET, the grid of a described MOSFET and the 2nd MOSFET receives respectively described the first pwm signal and the second pwm signal, and the first terminal of a described MOSFET and power input sub-connection, the second terminal of described the 2nd MOSFET is connected with earth terminal, and the second terminal of a described MOSFET is connected with the first terminal of described the 2nd MOSFET;
The one MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) set, comprise at least two MOSFET, the grid of each MOSFET receives described the first pwm signal, the first terminal and power input sub-connection;
The 2nd MOSFET (Metallic Oxide Semiconductor Field Effect Transistor, mos field effect transistor) set, comprise at least two MOSFET, the grid of each MOSFET receives described the second pwm signal, and the second terminal is connected with earth terminal;
Inductance, one end is connected with output port of power source VOUT, each MOSFET in the other end and the described MOSFET set and the second terminal of a MOSFET are connected, and are connected with each MOSFET during described the 2nd MOSFET gathers and the second terminal of a MOSFET;
Electric capacity, an end ground connection, the other end is connected on the passage between described inductance and the described output port of power source VOUT;
Third state control module is for the operating state of controlling at least one MOSFET of described MOSFET set and the 2nd MOSFET set according to the control parameter;
The operating state of at least one MOSFET in described MOSFET set and the 2nd MOSFET set is controlled by described third state control module, before operating state changes, all MOSFET have the 5th total-power loss, after operating state changed, all MOSFET had the 6th total-power loss less than described the 5th total-power loss.
Wherein the operating state of MOSFET just comprises two kinds: operating state and halted state.
The third state control module of third embodiment of the invention can realize in the following way.
Third state control module comprises:
The first switches set comprises one by one the 4th switch that the grid corresponding to the MOSFET of described MOSFET set arranges;
The second switch group comprises one by one the 5th switch that the grid corresponding to the MOSFET of described the 2nd MOSFET set arranges;
The 3rd break-make control unit is for the break-make of controlling the switch of described the first switches set and second switch group according to the control parameter.
Simultaneously, in the specific embodiments of the invention ear, need the operating state of the MOSFET in the described MOSFET set of control and the 2nd MOSFET set, to reduce the total-power loss of all MOSFET, in specific embodiment three, can realize by following mode:
＜mode one is controlled according to loading condition 〉
For mode one, this control parameter is present load.
In case after the type selecting of MOSFET was determined, for the situation of embodiment one, wherein, for power source integral, the operating state of MOSFET group comprises multiple operative scenario, and was as follows:
The state of the combination correspondence of the open and close of all MOSFET.
Off-line test and preserving under all states at first, the total-power loss of MOSFET group and the relation curve between the load.
When working control, the 3rd break-make control unit obtains present load, according to the relation curve between total-power loss and the load, obtains respectively the operating state of all MOSFET groups corresponding to the total-power loss of present load, at this moment, the control action of the 3rd break-make control unit is as described below:
According to present load, obtain the current total power loss under the work at present state of MOSFET group;
Organize operating states corresponding to the value of selecting the total-power loss of present load less than the current total power loss from all MOSFET;
With the working state control of MOSFET group for select less than any one the corresponding MOSFET group operating state in the value of current total power loss, certainly, MOSFET group operating state corresponding to minimum value in the value of the control power supply is in selection that best is.
For the control of state, control by the switch in the control switch group.
＜mode two is controlled according to foreign current 〉
For mode one, this control parameter is present load.
After in case the type selecting of MOSFET is determined, for the situation of embodiment three, wherein, for the MOSFET group, comprise multiple operative scenario, as follows:
The state of the combination correspondence of the open and close of all MOSFET.
Off-line test and preserve under all MOSFET group operating states the total-power loss of MOSFET group and the relation curve between the load current at first.
When working control, the 3rd break-make control unit obtains the present load electric current, according to the relation curve between total-power loss and the load current, obtain respectively all MOSFET group operating states corresponding to the total-power loss of present load electric current, at this moment, the control action of the 3rd break-make control unit is as described below:
According to the present load electric current, obtain the current total power loss under the work at present state of MOSFET group;
Organize operating states corresponding to the value of selecting the total-power loss of present load electric current less than the current total power loss from all MOSFET;
With the working state control of MOSFET group for select less than any one the corresponding MOSFET group operating state in the value of current total power loss, certainly, MOSFET group operating state corresponding to minimum value in the value of the control power supply is in selection that best is.
For the control of state, control by the switch in the control switch group.
Under the control of above-mentioned mode one and mode two, really can reduce total-power loss, yet the conduction loss that the conducting resistance RDS of MOSFET (on) causes (or claiming conduction loss) can cause the temperature of MOSFET to raise, each MOSFET has its highest temperature that can bear, therefore, the operating state of the embodiment of the invention is switched also needs to take into account temperature simultaneously, and therefore, this third state control module also comprises:
The 3rd temperature control unit, when the Current Temperatures of current in running order MOSFET exceeds the preset temperature threshold value, it is in parallel that control and described Current Temperatures exceed the MOSFET of preset temperature threshold value, and corresponding switch does not have at least one MOSFET among the MOSFET of unlatching in running order.
By above-mentioned control, because the Current Temperatures of a MOSFET exceeds the preset temperature threshold value, at this moment, control a switch conduction, increased the number with the MOSFET of the common parallel operation of this MOSFET this moment, therefore total conducting resistance RDS (on) reduces, so also will be so that the temperature reduction.
＜mode three is according to user input instruction control 〉
In case the type selecting of MOSFET for the situation of embodiment three, wherein, for power source integral, comprises multiple operative scenario after determining:
The state of the combination correspondence of the open and close of all MOSFET
At this moment, according to the conversion of user's outside input instruction between can state of a control, reduce total power loss.
In the above-described embodiment, take the number of the MOSFET of top tube and down tube as following combination the embodiment of the invention is illustrated:
Pipe on 2 MOSFET compositions, 1 MOSFET forms lower pipe;
Pipe on 2 MOSFET compositions, 2 MOSFET form lower pipe;
Pipe at least 3 MOSFET compositions, at least 3 MOSFET form lower pipe.
But should be understood that, embodiment of the invention method is equally applicable to the composition situation of following top tube and down tube:
Pipe on 1 MOSFET composition, 2 MOSFET form lower pipe.
Its processing mode is consistent with the front, is not elaborated at this.
In the method for supplying power to of the pulse width modulating switch power source of the embodiment of the invention, this pulse width modulating switch power source comprises the MOSFET group, this MOSFET group comprises the first mos field effect transistor MOSFET, the 2nd MOSFET and the controlled MOSFET that at least one is in parallel with a described MOSFET or the 2nd MOSFET, as shown in Figure 6, comprising:
Described control parameter is load, load current or user's input of control commands.
Described at least one controlled MOSFET one by one correspondence is provided with state control switch, controls the change of the operating state of described MOSFET group by controlling described state control switch.
The method also comprises:
When the Current Temperatures of in running order MOSFET exceeded the preset temperature threshold value, it is in parallel that control and described Current Temperatures exceed the MOSFET of preset temperature threshold value, and be at least one MOSFET unlatching among the MOSFET of closed condition.
Certainly, in above-mentioned various embodiment, for fear of the frequent switching of MOSFET integrality, use impacts to device, the operating frequency of control module can be set, for example following mode:
After last control MOSFET integrality is switched, must just can carry out the MOSFET integrality switching second time through Preset Time; Or
The predeterminable area of a control parameter is set, not carrying out the MOSFET integrality in this zone switches, select such zone, on the one hand because both efficient difference of this zone are little, in the time of can avoiding on the other hand selecting single point to judge and easily cause loading near the judging point, the frequent switching makes electric power system unstable.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (12)
1. pulse width modulating switch power source comprises:
The pulse-width modulation PWM controller is used for generating the first pwm signal and second pwm signal anti-phase with described the first pwm signal, and exports described the first pwm signal and the second pwm signal;
Mos field effect transistor MOSFET group, described MOSFET group comprises a MOSFET and the 2nd MOSFET, the grid of a described MOSFET is used for receiving described the first pwm signal, and the grid of described the 2nd MOSFET is used for receiving described the second pwm signal;
Inductance, an end is connected with output port of power source, and the other end is connected with the 2nd MOSFET with a described MOSFET;
Electric capacity, an end ground connection, the other end is connected on the passage between described inductance and the described output port of power source;
It is characterized in that:
Described MOSFET group also comprises at least one controlled MOSFET, and each described at least one controlled MOSFET is in parallel with a described MOSFET or the 2nd MOSFET;
Described pulse width modulating switch power source also comprises status control module, described status control module is used for the operating state according to described at least one the controlled MOSFET of control parameter control, make described MOSFET group change into the second operating state from the first operating state, under described the second operating state, the total-power loss of described MOSFET group is less than the total-power loss of described MOSFET group under described the first operating state;
The grid of the MOSFET in parallel with a described MOSFET is used for receiving described the first pwm signal among described at least one controlled MOSFET, one and described power input sub-connection in two other terminal, and another is connected with the other end of described inductance;
The grid of the MOSFET in parallel with described the 2nd MOSFET is used for receiving described the second pwm signal among described at least one controlled MOSFET, and in two other terminal one is connected with the other end of described inductance, and another is connected with earth terminal.
2. pulse width modulating switch power source according to claim 1 is characterized in that, described control parameter is load, load current or user's input of control commands.
3. pulse width modulating switch power source according to claim 2 is characterized in that, described status control module specifically comprises:
With described at least one controlled MOSFET state control switch of corresponding setting one by one, each described state control switch is arranged at the grid of corresponding MOSFET;
On-off control unit is used for controlling according to described control parameter conducting and the disconnection of described state control switch.
4. pulse width modulating switch power source according to claim 3 is characterized in that, when described control parameter was load, described on-off control unit specifically comprised:
The first acquiring unit is used for according to the load of pre-save and the corresponding relation between the total-power loss, obtains described MOSFET and organizes when being in described the first operating state the current total power loss that present load is corresponding;
The first selected cell is used for selecting described the second operating state from all possible operating state of described MOSFET group, and when described MOSFET group was in described the second operating state, total-power loss corresponding to present load was less than described current total power loss;
The first switch control unit is used for controlling described state control switch, makes the operating state of described MOSFET group change into described the second operating state.
5. pulse width modulating switch power source according to claim 3 is characterized in that, when described control parameter was load current, described on-off control unit specifically comprised:
Second acquisition unit is used for according to the load current of pre-save and the corresponding relation between the total-power loss, obtains described MOSFET and organizes when being in described the first operating state the current total power loss that the present load electric current is corresponding;
The second selected cell, the all possible operating state that is used for described MOSFET group, select described the second operating state, when described MOSFET group was in described the second operating state, total-power loss corresponding to present load electric current was less than described current total power loss;
The second switch control unit is used for controlling described state control switch, makes the operating state of described MOSFET group change into described the second operating state.
6. according to claim 4 or 5 described pulse width modulating switch power sources, it is characterized in that, in all possible operating state of described MOSFET group, when described MOSFET group was in described the second operating state, total-power loss corresponding to present load was minimum.
7. pulse width modulating switch power source according to claim 3 is characterized in that, when described control parameter was user's input of control commands, described on-off control unit specifically comprised:
Extraction unit extracts the operating state that the described MOSFET in described user's input of control commands organizes;
The 3rd switch control unit is used for controlling described state control switch, and the operating state that described MOSFET is organized is changed into the operating state in described user's input of control commands.
8. according to claim 2,3,4,5 or 7 described pulse width modulating switch power sources, it is characterized in that, also comprise:
Temperature control modules, be used for when the Current Temperatures of in running order MOSFET exceeds the preset temperature threshold value, it is in parallel that control and described Current Temperatures exceed the MOSFET of preset temperature threshold value, and be at least one MOSFET unlatching among the MOSFET of closed condition.
9. the method for controlling power supply of a pulse width modulating switch power source, it is characterized in that, described pulse width modulating switch power source comprises mos field effect transistor MOSFET group, described MOSFET group comprises a MOSFET, the 2nd MOSFET and the controlled MOSFET that at least one is in parallel with a described MOSFET or the 2nd MOSFET, and described method comprises:
According to the control parameter of pre-save and the corresponding relation between the total-power loss, obtain described MOSFET group under the first operating state, the current total power loss that current control parameter is corresponding;
From all possible operating state of described MOSFET group, select the second operating state, described MOSFET group is under described the second operating state, and total-power loss corresponding to present load electric current is less than described current total power loss;
Control the operating state of described MOSFET group and change into described the second operating state from described the first operating state.
10. method according to claim 9 is characterized in that, described control parameter is load, load current or user's input of control commands.
11. method according to claim 9 is characterized in that, described at least one controlled MOSFET one by one correspondence is provided with state control switch, controls the change of the operating state of described MOSFET group by controlling described state control switch.
12. method according to claim 9 is characterized in that, also comprises:
When the Current Temperatures of in running order MOSFET exceeded the preset temperature threshold value, it is in parallel that control and described Current Temperatures exceed the MOSFET of preset temperature threshold value, and be at least one MOSFET unlatching among the MOSFET of closed condition.
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| CN107422674A (en) * | 2017-08-30 | 2017-12-01 | 陕西千山航空电子有限责任公司 | A kind of super capacitor group fault detection and control system circuit in parallel and its fault handling method |
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| CN1435943A (en) * | 2002-02-01 | 2003-08-13 | 精工电子有限公司 | Pulse width modulating switch adjustor and electronic device |
| CN1691480A (en) * | 2004-04-14 | 2005-11-02 | 株式会社瑞萨科技 | Power supply device and switching power supply device |
| CN1725610A (en) * | 2005-04-21 | 2006-01-25 | 杭州华为三康技术有限公司 | Pulse width modulation switching power supply circuit with switching point noise suppression function |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1435943A (en) * | 2002-02-01 | 2003-08-13 | 精工电子有限公司 | Pulse width modulating switch adjustor and electronic device |
| CN1691480A (en) * | 2004-04-14 | 2005-11-02 | 株式会社瑞萨科技 | Power supply device and switching power supply device |
| CN1725610A (en) * | 2005-04-21 | 2006-01-25 | 杭州华为三康技术有限公司 | Pulse width modulation switching power supply circuit with switching point noise suppression function |
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