CN101752790B - Overvoltage protection element and manufacturing method thereof - Google Patents
Overvoltage protection element and manufacturing method thereof Download PDFInfo
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- CN101752790B CN101752790B CN2008101862221A CN200810186222A CN101752790B CN 101752790 B CN101752790 B CN 101752790B CN 2008101862221 A CN2008101862221 A CN 2008101862221A CN 200810186222 A CN200810186222 A CN 200810186222A CN 101752790 B CN101752790 B CN 101752790B
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Abstract
The invention relates to an overvoltage protection element and a manufacturing method thereof. The overvoltage protection element comprises a basal plate and a pair of electrode layers, wherein a clearance is arranged between electrode layers, a shade layer is arranged above the clearance and part of the electrode layers, and the shade layer and the clearance are covered by a sealing layer. The invention also provides the manufacturing method of the overvoltage protection element, which comprises the following steps: providing the basal plate; forming a first light obstruction layer on the basal plate; forming a patterning metal layer on the first light obstruction layer; taking the patterning metal layer as an exposure light cover and exposing and developing the first light obstruction layer so as to expose part of the basal plate; removing the patterning metal layer; forming a pair of electrode layers on the exposed basal plate, wherein the clearance is arranged between the electrode layers; and forming the sealing layer covering the clearance. The metal electrodes of the invention have end faces with better verticality, and the condition that substances except for air is remained in the clearance between the two metal electrodes can be effectively avoided so as to obtain a better product property, so that the invention is more suitable for practical use.
Description
Technical field
The present invention relates to a kind of passive device, particularly relate to a kind of overvoltage protection element and preparation method thereof.
Background technology
Overvoltage protection element (Over-Voltage Protecting Device) is widely used in various electronic system products and electronics; Use avoid because electric voltage exception or static discharge (Electro-Static Discharge ESD) damages electronic equipment.General overvoltage protection element is to be connected in parallel on the power supply, and when the overvoltage protection element was not had an effect, overvoltage protection element had sizable resistance, can influence primary circuit hardly; When voltage during greater than the critical voltage of overvoltage protection element, the resistance of overvoltage protection element can descend fast, and excessive voltage is directed to the earth terminal of power supply, uses and avoids other electronic components to damage because of excessive voltage.
Overvoltage protection element has polytype, and wherein, the overvoltage protection element that is used for electrostatic discharge (ESD) protection (ESDsuppressor) is then used the most extensive with the overvoltage protection element of gap discharge (gap discharge).The overvoltage protection element that adopts gap discharge be with the clearance control between two metal electrodes between several microns (μ m); When having the appropriate potential difference between two metal electrodes; Be present between two metal electrodes gas can thereby free; Use conducting two metal electrodes, make voltage too much be directed to earth terminal, avoid other electronic components are damaged by overvoltage protection element.In addition, the gap between two metal electrodes must avoid the material beyond the air to remain in the gap, otherwise can cause the withstand voltage stability of overvoltage protection element to reduce equally.
And the manufacture method of the overvoltage protection element of existing convention gap discharge; Such as TaiWan, China publication number 200807673 patents exposure; Use micro-photographing process and electroforming processing procedure to form two relative metal electrodes of arc, the gap between two metal electrodes can be controlled between 0.5 to the 10 μ m.Yet the micro-photographing process of existing known techniques is to use close induction type exposure machine (proximity aligner), and when using the close induction type exposure machine to make public; Must keep a suitable distance between light shield and the substrate, use and reduce the light shield contact substrate and produce pollution, but light shield and substrate between apart from big more; The probability that produces refraction is big more; Cause the end face and the perpendicularity between the substrate of metal electrode not good, can form near the size of substrate when adopting positive photoresistance usually narrower, away from the profile (profile) of the size broad of substrate; Can form size broad and adopt when bearing photoresistance, away from the narrower profile of the size of substrate near substrate; And two metal electrodes that form by the not good photoresistance electroforming of perpendicularity also can have the not good profile of perpendicularity, and then cause the voltage endurance of overvoltage protection element unstable.In addition, the substrate that existing convention is adopted is to use thin aluminum oxide substrate, and substrate is to make with high temperature sintering, so the evenness of substrate is wayward, has warping phenomenon to produce easily, and this also can influence perpendicularity.
In addition, such as TaiWan, China patent M336534 number, I253881 number exposure, the gap between two metal electrodes can be controlled at 10 to 30 μ m with the gap size between the metal electrode by diamond blade cutting or laser cutting mode.Yet the production method by diamond blade cutting or laser cutting carrying out gap causes the end face of metal electrode to produce burr or protrusion easily, and influences the roughness of metal electrode end face, causes the withstand voltage stability of overvoltage protection element to reduce.
This shows that above-mentioned existing overvoltage protection element obviously still has inconvenience and defective, and demands urgently further improving in product structure, manufacturing approach and use.In order to solve the problem of above-mentioned existence; Relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly; But do not see always that for a long time suitable design is developed completion; And common product and method do not have appropriate structure and method to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of new overvoltage protection element and preparation method thereof, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing overvoltage protection element exists; The inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge; And cooperate the utilization of studying the science, actively study innovation, in the hope of founding a kind of new overvoltage protection element and preparation method thereof; Can improve general existing overvoltage protection element, make it have more practicality.Through constantly research, design, and, found out the present invention of true tool practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is; Overcome the defective that existing overvoltage protection element exists; And a kind of manufacture method of new overvoltage protection element is provided; Technical problem to be solved is to make its metal electrode have the preferable end face of perpendicularity, uses to obtain preferable product performance, is very suitable for practicality.
Another object of the present invention is to; Overcome the defective that existing overvoltage protection element and preparation method thereof exists; And a kind of new overvoltage protection element and preparation method thereof is provided; Technical problem to be solved is to make it effectively avoid the material beyond the air to residue in the gap between two metal electrodes, uses obtaining preferable product performance, thereby is suitable for practicality more.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.The manufacture method of a kind of overvoltage protection element that proposes according to the present invention, it may further comprise the steps: a substrate is provided; Form one first photoresist layer on this substrate; Form a patterned metal layer on this first photoresist layer; With this patterned metal layer is an exposure light shield, this first photoresist layer is made public and develops, to expose this substrate of part; Remove this patterned metal layer; Form pair of electrode layers on this this substrate that exposes, this is to having a gap between electrode layer; And form a sealant and be covered in this gap.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
The manufacture method of aforesaid overvoltage protection element, the step of wherein said this patterned metal layer of formation comprises: form a metal level on this first photoresist layer; Form one the 3rd photoresist layer on this metal level; The exposure and the 3rd photoresist layer that develops, to expose this metal level of part, this metal level that exposes has two to be separated and symmetrical electrode external form, and this electrode external form is identical in fact to electrode layer with this; And remove this metal level that this exposes, to obtain this patterned metal layer.
The manufacture method of aforesaid overvoltage protection element, this step to electrode layer of wherein said formation comprises: electroplate a metal level on this this substrate that exposes; And remove this first photoresist layer, forming this gap between this is to electrode layer, and this has two to electrode layer and separates and symmetrical electrode external forms.
The manufacture method of aforesaid overvoltage protection element, this step to electrode layer of wherein said formation comprise this electrode layer that formation has an end face vertical with this substrate essence, and this gap of this end surfaces.
The manufacture method of aforesaid overvoltage protection element, the width in wherein said this gap are approximately between 5 μ m to 200 μ m.
The object of the invention and solve its technical problem and also adopt following technical scheme to realize.According to a kind of overvoltage protection element that the present invention proposes, it comprises: a substrate; Pair of electrode layers is arranged on this substrate, and this is to having a gap between electrode layer; One mask layer, this that is arranged at this gap and part be to electrode layer top, and this mask layer and this is to having a space between the electrode layer; And a sealant, be covered in this mask layer and this gap.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
Aforesaid overvoltage protection element, the height in wherein said space is greater than the width in this gap.
Aforesaid overvoltage protection element, wherein said mask layer have a section that slightly is the L type.
The object of the invention and solve its technical problem and adopt following technical scheme to realize in addition again.The manufacture method of a kind of overvoltage protection element that proposes according to the present invention is characterized in that it may further comprise the steps: a substrate is provided; Form pair of electrode layers on this substrate, wherein this is to having a gap between the electrode layer; Form a mask layer, this mask layer is arranged at this top to electrode layer of this gap and part; And forming a sealant, the sealing layer is covered in this mask layer and this gap.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
The manufacture method of aforesaid overvoltage protection element, the step of wherein said this mask layer of formation comprises: form one the 3rd photoresist layer and cover this gap; Form the third sublayer in this photoresist layer; Form one the 4th photoresist layer in this third sublayer; Little shadow the 4th photoresist layer is to form a notch; Form an electrodeposited coating in this notch; And remove the 4th photoresist layer, this third sublayer partly and this photoresist layer and form this mask layer.
The manufacture method of aforesaid overvoltage protection element, the step that wherein forms this mask layer comprises: form one the 3rd photoresist layer and cover this gap; Form a printed layers on this photoresist layer with printing process: and remove this photoresist layer.
The manufacture method of aforesaid overvoltage protection element, the material of wherein said mask layer are the hardening at subcritical temerature materials.
The manufacture method of aforesaid overvoltage protection element, this step to electrode layer of wherein said formation comprises: form one first photoresist layer in this substrate; This first photoresist layer of patterning, and expose this substrate; Form this to electrode layer in this this substrate that exposes; And remove this first photoresist layer.
The present invention compared with prior art has tangible advantage and beneficial effect.Know that by above for achieving the above object, the invention provides a kind of overvoltage protection element and preparation method thereof, its manufacture method comprises: substrate is provided; Form first photoresist layer on substrate; Form patterned metal layer on first photoresist layer; With the patterned metal layer is exposure light shield, first photoresist layer is made public and develops, to expose the substrate of part; Remove patterned metal layer; Form pair of electrode layers on the substrate that exposes, this is to having the gap between electrode layer; And the formation sealant is covered in the gap.
The manufacture method of foregoing overvoltage protection element, the material of sealant can be low rheological characteristic material.In another embodiment, the material of sealant can be and has the low rheological characteristic material of leading the static function.
The manufacture method of foregoing overvoltage protection element, the step that wherein forms patterned metal layer comprises: form metal level on first photoresist layer; Form the 3rd photoresist layer on metal level; The exposure and the 3rd photoresist layer that develops, to expose the metal level of part, the metal level that exposes has two to be separated and symmetrical electrode external form, and the electrode external form is with identical in fact to electrode layer; And remove the metal level that exposes, to obtain patterned metal layer.
According to above-mentioned purpose, the present invention discloses another kind of overvoltage protection element and preparation method thereof, and this overvoltage protection element comprises: substrate; Pair of electrode layers is arranged on the substrate, and this is to having the gap between electrode layer; Mask layer is arranged at this top to electrode layer of gap and part, and mask layer and this is to having the space between the electrode layer; Sealant is covered in mask layer and gap.
The manufacture method of aforesaid another kind of overvoltage protection element comprises: substrate is provided; Form pair of electrode layers on substrate, wherein this is to having the gap between the electrode layer; Form mask layer, mask layer is arranged at the top to electrode layer of gap and part; And the formation sealant, sealant is covered in mask layer and gap.
By technique scheme, overvoltage protection element of the present invention and preparation method thereof has advantage and beneficial effect at least:
1, the manufacture method of a kind of overvoltage protection element of the present invention, its metal electrode have the preferable end face of perpendicularity, use to obtain preferable product performance, are very suitable for practicality.
2, a kind of overvoltage protection element of the present invention and preparation method thereof, it effectively avoids the material beyond the air to residue in the gap between two metal electrodes, uses obtaining preferable product performance, thereby is suitable for practicality more.
In sum; The invention relates to a kind of overvoltage protection element and preparation method thereof; This overvoltage protection element comprises substrate, pair of electrode layers, and this is covered in mask layer and gap to top, the sealant that has gap, mask layer between the electrode layer and be arranged at the electrode layer of gap and part.The manufacture method that the present invention proposes a kind of overvoltage protection element in addition comprises: substrate is provided; Form first photoresist layer on substrate; Form patterned metal layer on first photoresist layer; With the patterned metal layer is exposure light shield, first photoresist layer is made public and develops, to expose the substrate of part; Remove patterned metal layer; Form pair of electrode layers on the substrate that exposes, this is to having the gap between electrode layer; And the formation sealant is covered in the gap.
The present invention has obvious improvement technically, and has tangible good effect, really is the new design of a novelty, progress, practicality.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Figure 1A to Fig. 1 N is the making flow chart of the overvoltage protection element of first embodiment of the invention.
Fig. 2 A to Fig. 2 N is the making flow chart of the overvoltage protection element of second embodiment of the invention.
Fig. 3 A to Fig. 3 D is that the part of third embodiment of the invention overvoltage protection element is made flow chart.
100,200,300: overvoltage protection element
11,21,31: substrate
110,210: substrate
111: the first
112: the second
121,221: the first Seed Layer
122,222: the second Seed Layer
131,231: the first photoresist layers
132,232: the second photoresist layers
133,233,333: the three photoresist layers
141: metal level
141a: patterned metal layer
151,251,351: electrode layer
152,252,352: bottom electrode layer
161: an end face of electrode layer
166,266,366: the gap
167,267: opening
171,271,371: sealant
172,272,372: protective layer
173,273,373: the first termination electrodes
174,274,374: the second termination electrodes
175,275,375: the first soldering-tin layers
176,276,376: the second soldering-tin layers
223: the third sublayer
234: the four photoresist layers
253: electrodeposited coating
265,365: mask layer
268: the space
269: notch
D: span
H: the height in space
W: the width in gap
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To the overvoltage protection element that proposes according to the present invention and preparation method thereof its embodiment, structure, manufacturing approach, step, characteristic and effect thereof, specify as after.
Some embodiments of the present invention will be described in detail as follows.Yet except following description, the present invention can also be widely implements at other embodiment, and scope of the present invention do not receive the qualification of embodiment, and it is as the criterion with claims scope.Moreover for clearer description being provided and being more readily understood the present invention, graphic interior each several part is not drawn according to its relative size, and some size is compared with other scale dependents and exaggerated; Incoherent detail section is not drawn fully yet, in the hope of graphic succinct.
Seeing also shown in Figure 1A to Fig. 1 N, is the making flow chart of the overvoltage protection element of first embodiment of the invention.The manufacture method of the overvoltage protection element 100 of first embodiment of the invention comprise (A) provide a substrate, (B) form one first photoresist layer on the substrate, (C) form a patterned metal layer on first photoresist layer, (D) be an exposure light shield with patterned metal layer; First photoresist layer is made public and develops; Remove patterned metal layer, (F) formation pair of electrode layers on the substrate that exposes with substrate, (E) that exposes part, this is covered in the gap to having a gap between electrode layer and (G) forming a sealant.Details are as follows for each step:
At first, (A) substrate 11 is provided, shown in Figure 1A and Figure 1B, substrate 11 has a substrate 110, first Seed Layer 121 and second Seed Layer 122.Substrate 110 has first 111 and second 112, and substrate 110 can be insulated substrate, for example aluminum oxide substrate, aluminium nitride substrate etc.First Seed Layer 121 and second Seed Layer 122 utilize sputtering way for example to be formed on first 111 and second 112 of substrate 110 respectively.The material of first Seed Layer 121 and second Seed Layer 122 can adopt titanizing tungsten (TiW), nichrome (Ni-Cr alloy), chromium (Cr), titanium (Ti), tantalum (Ta), monel (Ni-Cu alloy) etc.; Be preferably the electrode layer 151 and the bottom electrode layer 152 (like Fig. 1 I) that adopt with follow-up formation and distinguish separated material to some extent; Making can not etch into electrode layer when the subsequent seed layer carries out etching step, is to be electrode layer and titanizing tungsten (TiW) is that example describes for Seed Layer with copper in the present embodiment.The thickness of first Seed Layer 121 and second Seed Layer 122 is approximately between 0.05 μ m to 0.4 μ m.The setting of first Seed Layer 121 and second Seed Layer 122 can promote the tack of 110 of electrode layer 151 and bottom electrode layer 152 (like Fig. 1 I) and the substrates of follow-up formation.
Secondly, (B) form first photoresist layer 131 on substrate 11, shown in Fig. 1 C.Above first Seed Layer 121, form first photoresist layer 131, can form second photoresist layer 132 on substrate 11 in addition in this step, promptly form second photoresist layer 132 in second Seed Layer, 122 belows.The thickness of first photoresist layer 131 and second photoresist layer 132 is approximately between 10 μ m to 30 μ m; So not as limit; The thickness of first photoresist layer 131 also can become according to virtual electrode layer 151 (like Fig. 1 I) thickness demand; Preferably, the thickness of first photoresist layer 131 is equal to or greater than the thickness of electrode layer 151 (like Fig. 1 I), and first photoresist layer 131 adopts positive photoresistance.
Then, (C) form a patterned metal layer on first photoresist layer 121.In the present embodiment, the formation step of patterned metal layer can be with reference to figure 1D to Fig. 1 G.At first, above first photoresist layer 131, form metal level 141 (shown in Fig. 1 D).In the present embodiment; Metal level 141 can be formed at first photoresist layer, 131 tops between copper (Cu) layer of 0.03 μ m to 0.1 μ m with thickness by vapor deposition (evaporation) processing procedure approximately; When the thickness of copper layer is crossed when thin, the UV light that exposure manufacture process adopts can penetrating metal layer 141, when the thickness of copper layer is blocked up; Then waste metal material and easy etching or lateral erosion excessively, so the thickness of preferable copper layer is approximately between 0.03 μ m to 0.05 μ m.The material of metal level 141 is not defined as copper, and metal level 141 also can adopt other processing procedures and material, for example titanium (Ti), tantalum (Ta), chromium (Cr), gold (Au), aluminium materials such as (Al).In the present embodiment, the material of metal level 141 is a copper, compares with other materials, has following advantage, and at first, the process temperatures of copper steam-plating is lower, is difficult for influencing the characteristic of first photoresist layer 131 and second photoresist layer 132; Secondly, the employed shot copper lower cost for material of copper steam-plating, in addition, the processing procedure of subsequent etch copper is simpler and easy, also compares safety simultaneously.Then; Shown in Fig. 1 E, the thickness that above metal level 141, forms the 3rd photoresist layer 133, the three photoresist layers 133 is less than first photoresist layer 131; The thickness of the 3rd photoresist layer 133 is approximately between 0.5 μ m to 3 μ m, and the resolution of the 3rd photoresist layer 133 its micro-photographing process of employing thinner thickness is preferable.Then, shown in Fig. 1 F, the 3rd photoresist layer 133 is made public and micro-photographing process such as development, and expose the metal level 141 of part.In the present embodiment, the metal level 141 that is exposed has two to be separated and symmetrical electrode external form, and the electrode external form is identical in fact with electrode layer 151, but not as limit.The 3rd photoresist layer 133 can be positive photoresistance or negative photoresistance, and the 3rd photoresist layer 133 adopts positive photoresistance to have the negative good resolution of photoresistance in the present embodiment.Then, shown in Fig. 1 G, be shade by the 3rd photoresist layer 133, metal level 141 is carried out etching, etch away with the metal level 141 that will expose (promptly two separate and the part of symmetrical electrode external form), to obtain a patterned metal layer 141a.First photoresist layer 131 that is exposed after the etching has two to be separated and symmetrical electrode external form, but not as limit.
Then, shown in Fig. 1 H, be an exposure light shield (D) with patterned metal layer 141a; First photoresist layer 131 is made public and develops; Remove with first photoresist layer 131 that will expose (promptly having two separates and the part of symmetrical electrode external form), and expose the substrate 11 of part, the substrate that is exposed has two to be separated and symmetrical electrode external forms; In the present embodiment, expose first Seed Layer 121 of the part that is arranged at substrate 11.In addition, can another micro-photographing process second photoresist layer 132 is made public and develop, to expose second Seed Layer 122 of part.In the present embodiment; First photoresist layer 131 and second photoresist layer were opened and are made public and micro-photographing process such as development in 132 minutes; But not as limit; Ripe this art is when knowing that first photoresist layer 131 and second photoresist layer 132 also can carry out exposure manufacture process respectively and carry out developing manufacture process more simultaneously, and the present invention repeats no more in this.
Then, (E) remove patterned metal layer 141a and (F) form pair of electrode layers on the substrate that exposes, this is to having a gap between electrode layer.In the present embodiment; Shown in Fig. 1 I; Remove the 3rd photoresist layer 133 and patterned metal layer 141a earlier, above first Seed Layer 121 that exposes, form pair of electrode layers 151 by electroplating a metal level again, this has two to electrode layer 151 and separates and symmetrical electrode external form; Below second Seed Layer 122, form a pair of bottom electrode layer 152, wherein electrode layer 151 and bottom electrode layer 152 are promptly respectively as the upper/lower electrode layer of overvoltage protection element 100.Preferably, the thickness of electrode layer 151 should be less than the thickness of first photoresist layer 131, and the thickness of bottom electrode layer 152 should be less than the thickness of second photoresist layer 132, to avoid producing out-of-flatness defective effect discharging efficiencies such as convexity in electrode layer and photoresist layer joint.In the present embodiment, the thickness of electrode layer 151 and bottom electrode layer 152 is approximately between 3 μ m to 30 μ m, and electrode layer 151 comprises copper (Cu), silver (Ag), gold (Au), platinum (Pt), nickel (Ni), chromium conductive material such as (Cr) with the material of bottom electrode layer 152.
In the present embodiment, electrode layer 151 forms by electroplating process with bottom electrode layer 152 simultaneously, but not as limit, electrode layer 151 also can utilize electroplating process to form respectively with bottom electrode layer 152.When carrying out electroplating process respectively, first Seed Layer 121 of not electroplating or second Seed Layer 122 need with dry film or photoresistance as protection.And; If when carrying out the making of electrode layer 151 and bottom electrode layer 152 respectively; The manufacturing sequence of the micro-photographing process of aforementioned each photoresist layer and the electroplating process of follow-up each electrode layer also can change according to actual demand; For example behind the electroplating process of the micro-photographing process of elder generation's completion first photoresist layer 131 and electrode layer 151, carry out the micro-photographing process of second photoresist layer 132 and the electroplating process of bottom electrode layer 152 again.In addition, the 3rd photoresist layer 133 and patterned metal layer 141a also can remove after electrode layer 151 is electroplated completion again.
Then; Shown in Fig. 1 J; Remove first photoresist layer 131 and second photoresist layer 132 with and under first Seed Layer 121 and second Seed Layer 122, with form a gap 166 between the two electrode of opposite layers 151 and an opening 167 between two relative bottom electrode layers 152.In addition, the gap 166 that is formed at 151 of electrode layers has a width W, and width W is defined as the beeline of 151 of electrode layers, and width W is that the specification according to proof voltage designs.In the present embodiment, width W is approximately between 5 μ m to 200 μ m, preferably; Between 5 μ m to 30 μ m, more preferably, illustrate approximately approximately between 5 μ m to 20 μ m; 20KV/cm estimates with atmospherical discharges, and when width W during approximately between 5 μ m to 500 μ m, corresponding voltage is about 10-1000V.
Then, shown in Fig. 1 K, (G) above electrode layer 151, form sealant 171, sealant 171 avoids moisture or impurity to get into this gap 166 in order to the gap between the enclosed-electrode layer 151 166, influences point discharge usefulness.In the present embodiment, sealant 171 forms with printing process or coating process, and the thickness of sealant 171 is approximately between 5 μ m to 30 μ m, but not as limit, as long as the thickness of sealant 171 can seal the gap 166 between those electrode layers 151.Sealant 171 can adopt dry film macromolecular material or low rheological characteristic material etc., makes its purpose that can reach closing gap 166, and can not fill up gap 166.The viscosity higher (for example 40KCPs-150KCPs) of low rheological characteristic material, its solvent is volatile type solvent, also can add adhesive (Crosslinking Agent), tackifier or rheology control agent etc. in addition in order to the adjustment rheological behavior.Low rheological characteristic material can comprise epoxy resin (epoxy), polyimides (Polyimide; PI), resin (Rosin) etc.In addition; Sealant 171 also can adopt has the low rheological characteristic material of leading the static function; The low rheological characteristic material that for example has metallic; By the adjustable capacitance of haveing suffered the voltage protection element of the material behavior of metallic, wherein metallic can be zinc oxide (ZnO), copper (Cu), nickel (Ni) or aluminium (Al) etc.Adhesive then can adopt fumed silica (Fumed Silica), the Varox Peroixde or 2 of Cab-O-
series; 4-dichloro-benzoyl base (2; 4-dichlorbenzoyl) the polymer (Polymer) of long-chain such as grade; This kind adhesive has two kinds of effects; A kind of effect is that metallic particles mixes uneven and produces deposition when preventing that metallic particles from mixing with resin material; Another kind of effect is the rheological characteristic that can improve fluid, in addition as cover layer of oxide layer at metal dust and also can effectively improve element in overvoltage or the stability that filled by static to hit (Pulse).
Then, shown in Fig. 1 L, above sealant 171, form protective layer 172, protective layer 172 can adopt materials coatings such as epoxy resin, polyimides or acryl resin to form, and is the example explanation with epoxy resin in the present embodiment.Protective layer 172 covers the electrode layer 151 of sealant 171 and part, uses environmental factors such as avoiding temperature, humidity and causes component wear.
Then, shown in Fig. 1 M, form first termination electrode 173 and second termination electrode 174, make electrode electrically connected layer 151 and bottom electrode layer 152 respectively at the end face of substrate 11.In the present embodiment; First termination electrode 173 and second termination electrode 174 form with sputter process; Its material can be nickel or chromium etc.; But not as limit, first termination electrode 173 and second termination electrode 174 also can adopt other processing procedures and material, for example ion film plating (ion plating) or be stained with silvery journey etc.
At last; Shown in Fig. 1 N; On first termination electrode 173 and second termination electrode 174, form first soldering-tin layer 175 and second soldering-tin layer 176; And coat the electrode layer 151 and bottom electrode layer 152 expose, use as overvoltage protection element 100 its with an outer electrode of circuit external plate electric connection.In the present embodiment, first soldering-tin layer 175 and second soldering-tin layer 176 form nickel tin layer (Ni/Snlayer) with electroplating process, but not as limit, first soldering-tin layer 175 and second soldering-tin layer 176 also can adopt other processing procedures and material.
Making flow process by above-mentioned can be made into overvoltage protection element 100, shown in Fig. 1 N.Overvoltage protection element 100 comprises: substrate 11, pair of electrode layers 151, sealant 171 and outer electrode (i.e. first termination electrode 173 and second termination electrode 174).This is arranged at substrate 110 to electrode layer 151, and this is to having a gap 166 between the electrode layer 151, wherein, electrode layer 151 in abutting connection with the gap 166 a end face 161 essence perpendicular to substrate 110 and be an even surface.Sealant 171 is covered in electrode layer partly 151 and gap 166, uses seal clearance 166.First termination electrode 173 and second termination electrode 174 as outer electrode electrically connect electrode layer 151 and bottom electrode layer 152 respectively.
Note at this; The manufacture method of the overvoltage protection element of present embodiment; Replace the light shield in the existing used exposure machine of convention micro-photographing process (for example close induction type exposure machine) by patterned metal layer 141a, first photoresist layer 131 is made public, reduce the distance between light shield and photoresist layer; Make between end face and the substrate 110 of the photoresist layer 131 of winning to have preferable perpendicularity, can not produce existing positive photoresistance of convention or the not good situation of negative photoresistance perpendicularity.Therefore; Those electrode layers 151 that form by first photoresist layer 131 also can have the preferable end face of perpendicularity; And the end face of those electrode layers 151 is even surface, can not produce like the roughness of existing convention metal electrode end face excessive, the situation that causes the withstand voltage stability of overvoltage protection element to reduce; Therefore, can obtain preferable product performance.
Moreover; Adopt the 3rd photoresist layer 133 of thinner thickness to make micro-photographing process in the present embodiment; Make that the resolution of micro-photographing process is higher and make between end face and the substrate 11 of the 3rd photoresist layer 133 and have preferable perpendicularity; Come etch metal layers 141 to obtain patterned metal layer 141a with the 3rd photoresist layer 133 as shade again; Use between patterned metal layer 141a and the substrate 110 and also can have preferable perpendicularity, last, first photoresist layer 131 is carried out micro-photographing process and forms electrode layer 151 with electroplating process as exposure light shield with patterned metal layer 141a again; Use to make in abutting connection with the gap one end face 161 of 166 electrode layer 151 have preferable perpendicularity, and obtain preferable product performance with substrate 110.
What deserves to be mentioned is; In the step that electrode layer 151 forms; Adopt preferable positive photoresistance and the electroplating process of resolution; Have preferable perpendicularity so can guarantee in abutting connection with the gap one end face 161 of 166 electrode layer 151 with substrate 110, especially when the width W in the thickness increase of electrode layer 151 and gap 166 reduced, manufacture method of the present invention also can provide good perpendicularity.
Seeing also shown in Fig. 2 A to Fig. 2 N, is the making flow chart of the overvoltage protection element of second embodiment of the invention.Details are as follows for the manufacture method of the overvoltage protection element 200 of second embodiment of the invention:
At first, a substrate 21 is provided, shown in Fig. 2 A and Fig. 2 B, substrate 21 has a substrate 210, first Seed Layer 221 and second Seed Layer 222, and relevant annexation and material are identical with first embodiment, so do not give unnecessary details at this.
Secondly, form pair of electrode layers 251 on substrate 210, this is to having a gap 266 between the electrode layer 251, shown in Fig. 2 C to Fig. 2 E.Shown in Fig. 2 C, above first Seed Layer 221, form first photoresist layer 231; Below second Seed Layer 222, form second photoresist layer 232.Then, shown in Fig. 2 D, micro-photographing process capable of using makes public to first photoresist layer 231 and second photoresist layer 232 and develops, and exposes first Seed Layer 221 and second Seed Layer 222 of part respectively.Then, shown in Fig. 2 E, above first Seed Layer 221 that exposes, form pair of electrode layers 251 by electroplating process; Below second Seed Layer 222 that exposes, form a pair of bottom electrode layer 252.Then, remove first photoresist layer 231 and second photoresist layer 232 with and under first Seed Layer 221 and second Seed Layer 222, with form a gap 266 between the two comparative electrode layers 251 and an opening 267 between two relative bottom electrode layers 252.Detailed fabrication steps please refer to first embodiment, does not give unnecessary details at this.
In addition, electrode layer 251 also can adopt the described manufacture method formation of Fig. 1 C to Fig. 1 J among first embodiment; And by the formed electrode layer 251 of the method for first embodiment compared to Fig. 2 C to Fig. 2 E, can have preferable perpendicularity and/or smoothness between an end face of electrode layer 251 and the substrate 21.
Then, with reference to figure 2G to Fig. 2 J, form mask layer 265 in the gap 266 and the top of the electrode layer 251 of part, and mask layer 265 has a section that slightly is the L type.Illustrate, shown in Fig. 2 F to Fig. 2 J, form earlier the 3rd photoresist layer 233 above the electrode layer 251 of part and coverage gap 266, shown in Fig. 2 F.Moreover; Shown in Fig. 2 G, above electrode layer 251 and the 3rd photoresist layer 233, form the third sublayer 223 by sputter process, the material of the third sublayer 223 needs different with electrode layer 251; Electrode layer 251 is removed when preventing the third sublayer 223 of subsequent etch; The material of electrode layer 251 is a copper in the present embodiment, and the material of the third sublayer 223 is titanizing tungsten (TiW), but not as limit.Then, shown in Fig. 2 H, above the third sublayer 223, form the 4th photoresist layer 234.Then; Shown in Fig. 2 I, the 4th photoresist layer 234 is made public and micro-photographing process such as development, make the third sublayer 223 that exposes part to form the notch 269 that a side slightly is the L type; Then, by forming electrodeposited coating 253 in the notch 269 of electroplating process above the third sublayer 223.The material of electrodeposited coating 253 is a copper in the present embodiment, and the material of the third sublayer 253 is titanizing tungsten (TiW), but not as limit.At last; Shown in Fig. 2 J; By developing manufacture process the 4th photoresist layer 234 and the 3rd photoresist layer 233 are removed, and the etched processing procedure removes the third sublayer 223 partly, to form the mask layer of being formed by partly the third sublayer 223 and electrodeposited coating 253 265.What deserves to be mentioned is that the section of mask layer 265 slightly is the L type, and have a space 268 between mask layer 265 and the electrode layer 251, mask layer 265 covers one of them electrode layer 251, and mask layer 265 covers electrode layer 251 are of a size of span D.In the present embodiment, the height H in space 268 is greater than the width W in gap 266, and preferably, the height H in space 268 is about 2 times of width W in gap 266, uses making point discharge only possibly occur in this to the gap between the electrode layer 251 266.
In addition, when the material of mask layer 265 and electrode layer 251 not simultaneously, then can save the setting of electrodeposited coating 253, and directly with the third sublayer 223 as mask layer 265.
Then; Above mask layer 265, form sealant 271 (like Fig. 2 K) and protective layer 272 (like Fig. 2 L) in regular turn; At last, shown in Fig. 2 M and Fig. 2 N, form first termination electrode 273, second termination electrode 274, first soldering-tin layer 275 and second soldering-tin layer 276 respectively; And detailed fabrication steps please refer to first embodiment, does not give unnecessary details at this.
Shown in Fig. 2 N, comprise substrate 21, pair of electrode layers 251, mask layer 265 and sealant 271 by the made overvoltage protection element 200 of above-mentioned making flow process.Electrode layer 251 is arranged on the substrate 21, and has a gap 266 between the electrode layer 251.Mask layer 265 is arranged at gap 266 and partly this to electrode layer 251 tops, and mask layer 265 has the section that slightly is the L type.Sealant 271 is covered in mask layer 265 and gap 266.
In the present embodiment, stop that by being provided with of mask layer 265 low rheological characteristic material (being sealant 271) flows into the gap 266 between the electrode layer 251.In addition, even low rheological characteristic material flows between mask layer 265 and the electrode layer 251 via space 268,, can guarantee that low rheological characteristic material can not flow into gap 266 because span D has enough length.Therefore, can effectively avoid the material beyond the air to remain in the gap between two metal electrodes and cause the withstand voltage stable problem that reduces, make the present invention can obtain preferable product performance.
Seeing also shown in Fig. 3 A to Fig. 3 D, is that the part of the overvoltage protection element of third embodiment of the invention is made flow chart.The difference of the 3rd embodiment and second embodiment is in the formation method at mask layer 365.For asking the succinctly understandable of specification; Among the 3rd embodiment with second embodiment in similar or components identical (for example; Substrate 31, electrode layer 351, bottom electrode layer 352, sealant 371, protective layer 372, first termination electrode 373, second termination electrode 374, first soldering-tin layer 375 and second soldering-tin layer 376 etc.) and/or manufacturing approach; With the similar components symbol display, its related description repeats no more at this in the present embodiment.And the formation method of relevant mask layer 365, like Fig. 3 A to Fig. 3 C.Form the gap 366 of 351 of the 3rd photoresist layer 333 covers electrode layer earlier, like Fig. 3 A.Then, shown in Fig. 3 B, can on the 3rd photoresist layer 333, form mask layer 365 by printing process (for example thick film screen printing processing procedure).In the present embodiment; The material of mask layer 365 is the hardening at subcritical temerature material; For example room temperature vulcanizing type or UV constrictive type acryl resin and epoxy resin etc. are used the characteristic of avoiding the required temperature effect of hardened material the 3rd photoresist layer 333, cause the 3rd photoresist layer 333 to be difficult for removing.Then, shown in Fig. 3 C, remove the 3rd photoresist layer 333 and form mask layer 365 in the gap 366 and segment electrode layer 351 tops.Can simplify the step that mask layer 365 forms by aforesaid way.
Then; Form sealant 371, protective layer 372, first termination electrode 373, second termination electrode 374, first soldering-tin layer 375 and second soldering-tin layer 376 respectively; To form the overvoltage protection element 300 shown in Fig. 3 D; And detailed fabrication steps please refer to first embodiment and second embodiment, does not give unnecessary details at this.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the method for above-mentioned announcement capable of using and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations; In every case be the content that does not break away from technical scheme of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (11)
1. the manufacture method of an overvoltage protection element is characterized in that it may further comprise the steps:
One substrate is provided;
Form one first photoresist layer on this substrate;
Form a patterned metal layer on this first photoresist layer;
With this patterned metal layer is an exposure light shield, this first photoresist layer is made public and develops, to expose this substrate of part;
Remove this patterned metal layer;
Form pair of electrode layers on the part substrate that this exposes, this is to having a gap between electrode layer; And
Form a sealant and be covered in this gap.
2. the manufacture method of overvoltage protection element according to claim 1 is characterized in that the step of wherein said this patterned metal layer of formation comprises:
Form a metal level on this first photoresist layer;
Form one the 3rd photoresist layer on this metal level;
The exposure and the 3rd photoresist layer that develops, to expose this metal level of part, the part metals layer that this exposes has two to be separated and symmetrical electrode external form, and this electrode external form is identical in fact to electrode layer with this; And
Remove the part metals layer that this exposes, to obtain this patterned metal layer.
3. the manufacture method of overvoltage protection element according to claim 1 is characterized in that this step to electrode layer of wherein said formation comprises:
Electroplate a metal level on the part substrate that this exposes; And
Remove this first photoresist layer, forming this gap between this is to electrode layer, and this has two to electrode layer and separates and symmetrical electrode external forms.
4. the manufacture method of overvoltage protection element according to claim 1 is characterized in that this step to electrode layer of wherein said formation comprises this electrode layer that formation has an end face vertical with this substrate essence, and this gap of this end surfaces.
5. the manufacture method of overvoltage protection element according to claim 1, the width that it is characterized in that wherein said gap is approximately between 5 μ m to 200 μ m.
6. overvoltage protection element is characterized in that it comprises:
One substrate;
Pair of electrode layers is arranged on this substrate, and this is to having a gap between electrode layer, and this electrode layer has an end face vertical with this substrate essence, and this gap of this end surfaces;
One mask layer, this that is arranged at this gap and part is to electrode layer top, and this mask layer has a vertical section that slightly is the L type, and this vertical section is perpendicular to this substrate, and this mask layer and this is to having a space between the electrode layer; And
One sealant is covered in this mask layer and this gap.
7. overvoltage protection element according to claim 6 is characterized in that the width of the height in wherein said space greater than this gap.
8. the manufacture method of an overvoltage protection element is characterized in that it may further comprise the steps:
One substrate is provided;
Form one first photoresist layer on this substrate;
Form a patterned metal layer on this first photoresist layer;
With this patterned metal layer is an exposure light shield, this first photoresist layer is made public and develops, to expose this substrate of part;
Remove this patterned metal layer;
Form pair of electrode layers on the part substrate that this exposes, wherein this is to having a gap between the electrode layer;
Form a mask layer, this mask layer is arranged at this top to electrode layer of this gap and part; And
Form a sealant, the sealing layer is covered in this mask layer and this gap.
9. the manufacture method of overvoltage protection element according to claim 8 is characterized in that the step of wherein said this mask layer of formation comprises:
Form one the 3rd photoresist layer and cover this gap;
Form the third sublayer in this photoresist layer;
Form one the 4th photoresist layer in this third sublayer;
Little shadow the 4th photoresist layer is to form a notch;
Form an electrodeposited coating in this notch; And
Remove this third sublayer of the 4th photoresist layer, the 3rd photoresist layer and part and form this mask layer.
10. the manufacture method of overvoltage protection element according to claim 8 is characterized in that the step of wherein said this mask layer of formation comprises:
Form one the 3rd photoresist layer and cover this gap;
Form a printed layers on this photoresist layer with printing process; And
Remove this photoresist layer.
11. the manufacture method of overvoltage protection element according to claim 10, the material that it is characterized in that wherein said mask layer are the hardening at subcritical temerature materials.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108092133A (en) * | 2017-12-12 | 2018-05-29 | 湖南艾华集团股份有限公司 | Overvoltage and surge protection device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102457055A (en) * | 2010-10-27 | 2012-05-16 | 瑷司柏电子股份有限公司 | Over-voltage protection element with multiple air-gap electrode pairs |
| CN103918144B (en) * | 2011-09-28 | 2016-03-02 | 釜屋电机株式会社 | The manufacture method of electrostatic protection element |
| CN104078447B (en) * | 2013-03-27 | 2018-10-26 | 佳邦科技股份有限公司 | Overvoltage protection element and preparation method thereof |
| US10804464B2 (en) * | 2017-11-24 | 2020-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming memory device with diffusion barrier and capping layer |
| CN110098154A (en) * | 2019-04-12 | 2019-08-06 | 深圳通感微电子有限公司 | Package substrate and production method |
| CN111924795B (en) * | 2020-07-17 | 2021-06-22 | 诺思(天津)微系统有限责任公司 | Device packaging module, packaging method and electronic device with module |
| TWM639223U (en) * | 2020-07-27 | 2023-04-01 | 禾伸堂企業股份有限公司 | High-power resistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101202422A (en) * | 2006-12-11 | 2008-06-18 | 大毅科技股份有限公司 | Chip-type air discharging protection component and method for making same |
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| CN101202422A (en) * | 2006-12-11 | 2008-06-18 | 大毅科技股份有限公司 | Chip-type air discharging protection component and method for making same |
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|---|
| JP平11-154580A 1999.06.08 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108092133A (en) * | 2017-12-12 | 2018-05-29 | 湖南艾华集团股份有限公司 | Overvoltage and surge protection device |
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