CN101752001B - Method for preventing contents in programmable nonvolatile memory from being mistakenly rewritten - Google Patents
Method for preventing contents in programmable nonvolatile memory from being mistakenly rewritten Download PDFInfo
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- CN101752001B CN101752001B CN200810239494A CN200810239494A CN101752001B CN 101752001 B CN101752001 B CN 101752001B CN 200810239494 A CN200810239494 A CN 200810239494A CN 200810239494 A CN200810239494 A CN 200810239494A CN 101752001 B CN101752001 B CN 101752001B
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Abstract
The invention provides a method for preventing contents stored in a programmable nonvolatile memory from being mistakenly rewritten during designing an integrated circuit. A write enabling signal of the programmable nonvolatile memory is controlled by using an indicating signal of which the address is forbidden rewriting, and a lead wire of the indicating signal is put into a scribing groove to perform scribing treatment after the programmable nonvolatile memory finishes downloading the contents, so the purpose of preventing the contents in the programmable nonvolatile memory from being rewritten in the hardware is achieved.
Description
Technical field
The present invention relates to the method that the content (comprising data and program) in the protection programmable non-volatile memory is not mistakenly rewritten in a kind of IC design, this method has become a part of storage space of programmable non-volatile memory into ROM (read-only memory).
Background technology
Programmable non-volatile memory is because it possesses good dirigibility, and can programme at any time is widely used, and many systems often adopt program and the data-carrier store of programmable non-volatile memory as CPU.But because power supply is unstable, the reason that external interference etc. are different can cause program fleet, thereby makes that program and data in the register are rewritten in practical application.The content that the rewriting of data can cause storing makes a mistake, and the rewriting problem of program area is particularly serious.Because the program area often can not adopt the mirror image protection as the data field, means such as backup are carried out the mistakenly rewritten reduction of data, so the mistakenly rewritten of program area usually causes total system that the mistake that can't remedy takes place, cause chip operation to lose efficacy.
Usually often adopt method such as MMU to carry out for the protection of program area, but these methods often need be by means of writing some data or sign in programmable non-volatile memory, also there is the problem of being rewritten in these data with sign.And the protection of the mirror image of the conventional critical data that adopts also exists the memory spending increase, and time-consuming shortcoming is differentiated in operation.
Summary of the invention
In order both to take into account the programmable features of programmable non-volatile memory program area; Again the memory content of accomplishing programming is prevented the mistakenly rewritten protection simultaneously; The present invention proposes a kind of method that the programmable non-volatile memory content is protected; This method is a kind of hardware implementation method, and realizes convenient and reliable.
Whether this method is drawn to break and is determined whether and can carry out write operation to forbidding erasable zone through downloading enable signal, if drawn disconnected then can download this zone; Disconnected as drawing, whether the write address that the write command that then sends according to signal In_Protect_Addr (1) indication CPU need be operated in this way then forbids this operation forbidding erasable zone (as accomplishing the program area of downloading), as not being then to allow this operation.
Description of drawings
Fig. 1 is for realizing the circuit of this method.
Embodiment
The write operation enable signal NVM_WE (4) that supposes programmable non-volatile memory (7) is that high level carries out write operation.
Before the download content of accomplishing programmable non-volatile memory; Download enable signal DEN (15) and DEN ' (14) are drawn disconnected, because Download_en (2) connects high level, this level is through impact damper (8); Impact damper (9) be delivered to or the door (12) an input end; Then should or the output signal of door (12) be high level, NVM_WE (4) depends on the Write_enable (3) that CPU sends, the write operation of this moment does not receive the restriction of address realm.
After accomplishing the programmable non-volatile memory download content; To be in interior DEN (15) of scribe line and the line between the DEN ' (14) draws disconnected; DEN ' (14) is moved to low level by resistance, or address realm indicator signal In_Protect_Addr (1) is depended in the output of door (12).If being in, the write operation address that this signal sends for high expression CPU forbids erasable zone; Then or the door (12) be output as low level; Make that being output as the write operation enable signal Write_enable (3) that low level causes CPU to send with door (13) can not be delivered to NVM_WE (4); Be that NVM_WE (4) is low level, can not programmable non-volatile memory (7) be rewritten; If In_Protect_Addr (1) signal is low then representes that the address of write operation is the write signal of normal address; Permission is carried out write operation to programmable non-volatile memory; Or door (12) is output as high level; The write operation enable signal Write_enable (3) that CPU sends can be passed to NVM_WE (4), thereby accomplishes normal write operation.
Line in the scribe line to draw disconnected be to accomplish with saw blade during through the WAFER scribing to cut off.
The present invention proposes a kind ofly prevents to be stored in the method that the content in the programmable non-volatile memory is mistakenly rewritten when IC design; Utilization is to the indicator signal of the forbidding readdressing control of writing enable signal to programmable non-volatile memory; And the lead-in wire of this indicator signal put into scribe line; After programmable non-volatile memory is accomplished download content; Drawing disconnected the processing, reaching the purpose that the content that on hardware, prevents in the programmable non-volatile memory is rewritten, realizing convenient and reliable.
Claims (1)
1. method that the content that prevents to be stored in the programmable non-volatile memory is mistakenly rewritten; It is characterized in that enabling control signal Write_enable (3) and controlling writing of programmable non-volatile memory (7) jointly and enable control end NVM_WE (4) with writing through downloading enable signal Download_en (2); To download enable signal Download_en (2) and put into scribe line (6) after through impact damper (8) buffer memory; Programmable non-volatile memory is before accomplishing download content; Write operation does not receive the restriction of address realm; After programmable non-volatile memory is accomplished download content, will be in download enable signal DEN (15) and the line between the download enable signal DEN ' (14) in the scribe line and draw disconnectedly, the content that is in the programmable non-volatile memory (7) of forbidding the readdressing scope can not be rewritten again; Forbid that the content outside the readdressing scope still can be rewritten, programmable non-volatile memory (7) is divided into protection zone and the programmable region that to rewrite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810239494A CN101752001B (en) | 2008-12-12 | 2008-12-12 | Method for preventing contents in programmable nonvolatile memory from being mistakenly rewritten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810239494A CN101752001B (en) | 2008-12-12 | 2008-12-12 | Method for preventing contents in programmable nonvolatile memory from being mistakenly rewritten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101752001A CN101752001A (en) | 2010-06-23 |
| CN101752001B true CN101752001B (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200810239494A Active CN101752001B (en) | 2008-12-12 | 2008-12-12 | Method for preventing contents in programmable nonvolatile memory from being mistakenly rewritten |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117785590B (en) * | 2024-02-27 | 2024-05-28 | 深圳市纽创信安科技开发有限公司 | Chip and chip data protection method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1371515A (en) * | 1999-08-31 | 2002-09-25 | 索尼计算机娱乐公司 | Electric/electronic circuit device |
| CN1710709A (en) * | 2004-06-16 | 2005-12-21 | 上海镭芯微电子有限公司 | Technical method for raising output voltage accurac yof DC/DC boost integrated circuit |
| CN1979686A (en) * | 2005-12-06 | 2007-06-13 | 上海华虹Nec电子有限公司 | Safety detecting method for system integrated chip with built-in non-volatile memory |
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2008
- 2008-12-12 CN CN200810239494A patent/CN101752001B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1371515A (en) * | 1999-08-31 | 2002-09-25 | 索尼计算机娱乐公司 | Electric/electronic circuit device |
| CN1710709A (en) * | 2004-06-16 | 2005-12-21 | 上海镭芯微电子有限公司 | Technical method for raising output voltage accurac yof DC/DC boost integrated circuit |
| CN1979686A (en) * | 2005-12-06 | 2007-06-13 | 上海华虹Nec电子有限公司 | Safety detecting method for system integrated chip with built-in non-volatile memory |
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| CN101752001A (en) | 2010-06-23 |
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Address after: 102209 Beijing, Beiqijia, the future of science and technology in the south area of China electronic network security and information technology industry base C building, Patentee after: Beijing CEC Huada Electronic Design Co., Ltd. Address before: 100102 Beijing City, Chaoyang District Lize two Road No. 2, Wangjing science and Technology Park A block five layer Patentee before: Beijing CEC Huada Electronic Design Co., Ltd. |