CN101747840A - Chemical-mechanical polishing solution - Google Patents
Chemical-mechanical polishing solution Download PDFInfo
- Publication number
- CN101747840A CN101747840A CN200810203712A CN200810203712A CN101747840A CN 101747840 A CN101747840 A CN 101747840A CN 200810203712 A CN200810203712 A CN 200810203712A CN 200810203712 A CN200810203712 A CN 200810203712A CN 101747840 A CN101747840 A CN 101747840A
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- CN
- China
- Prior art keywords
- polishing fluid
- salt
- polishing
- isocyanuric acid
- abrasive grains
- Prior art date
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Abstract
The invention provides chemical-mechanical polishing solution, containing ground particles, water, isocyanuric acid containing halogen substituent and/or salt thereof and complexing agents. The polishing solution has good polishing performance and obviously improves the polishing rate of metals, especially copper.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, relate in particular to a kind of metal-polishing liquid.
Background technology
Along with the continuous development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.Twentieth century eighties, be considered to the effective means of present overall planarization by cmp (CMP) technology of IBM Corporation's initiative.
Cmp (CMP) is by chemical action, mechanical effect and these two kinds effect be combined intos.It is usually by a grinding stage that has polishing pad, and a grinding head that is used for carries chips is formed.Wherein grinding head is fixed chip, and the front with chip is pressed on the polishing pad then.When carrying out cmp, grinding head linearity on polishing pad moves or rotates along the direction of motion the same with grinding stage.Meanwhile, the slurries that contain abrasive are dripped on the polishing pad, and are tiled on the polishing pad because of centrifugation.Chip surface is realized overall planarization under machinery and chemical dual effect.
The main mechanism of metal CMP is: oxygenant is earlier with the oxidation on metal surface film forming, and subsequently, abrasive is removed oxide film machinery, produces new metallic surface and continues oxidizedly, and these two kinds effects are worked in coordination with and carried out.
To metal CMP hydrogen peroxide as oxidant commonly used, for example: United States Patent (USP) 5958288,6068787 usefulness hydrogen peroxide carry out the CMP of tungsten at present.United States Patent (USP) 6,585,568 usefulness hydrogen peroxide carry out copper CMP.In addition, also has Fe (NO
3)
3, NH
4NO
3, AgNO
3, KMnO
4, NaClO
3, KIO
3In oxygenant.
Above oxygenant itself has some shortcomings, and for example: hydrogen peroxide is unstable easily to be decomposed, and Fe salt can cause metal residual (ionic soil), AgNO
3See that high light decomposes KMnO
4Red-purple and oxidation products MnO are arranged
2Stain board, problem such as the nitrate radical oxidation capacity is weak.Therefore, in process always to the searching of novel oxygenant.
Summary of the invention
The technical problem to be solved in the present invention is at the existing oxidation capacity deficiency of existing polishing fluid, less stable, the defective that polishing speed is low, a kind of chemical mechanical polishing liquid that comprises novel oxygenant is provided, the isocyanuric acid that this novel oxygenant is halogen-containing replacement and/or its salt, polishing fluid stable good of using this oxygenant, polishing performance is good, and can cooperatively interact with complexing agent, the polishing speed of metal especially copper is increased significantly.
Polishing fluid of the present invention contains: abrasive grains, water, the isocyanuric acid of halogen-containing replacement and/or its salt and complexing agent.
The isocyanuric acid of described halogen-containing replacement and/or its salt specifically comprise dichloroisocyanuric acid, dibromo isocyanuric acid, TCCA (Trichloroisocyanuric acid), tribromo isocyanuric acid, bromine chlorine isocyanuric acid and their salt, wherein preferred dichloroisocyanuric acid and salt thereof.
Described salt is metal-salt and non-metal salt, particular certain cancers, sylvite, ammonium salt, quaternary ammonium salt.
The isocyanuric acid of described halogen-containing replacement and/or the content of its salt are 0.01～15%, preferred 1～5%.
Described abrasive grains is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more, preferred SiO
2
Described abrasive grains particle diameter 30～200nm, preferred 50～120nm.
The content of described abrasive grains is mass percent 0.1～30%.Preferred 1～10%.
Described complexing agent is triazole class, thiazoles, organic phosphine acids complexing agent.Preferred benzotriazole (BTA), mercapto benzothiazole (MBT), 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid (HEDP).
Described polishing fluid can also further contain typical additives such as pH regulator agent.
Described polishing fluid pH value 2～13, preferred 2～6.
Positively effect of the present invention is: the used oxygenant of the present invention belongs to novel halogen-containing oxygenant.This novel oxygenant is better than common oxygenant aspect following: 1, the available chlorine 30～35% of normally used oxygenant hypochlorous acid and salt thereof, representative substances among the present invention: dichloroisocyanuric acid sodium available chlorine 60～64%, TCCA (Trichloroisocyanuric acid) available chlorine is up to 90%, and higher available chlorine means higher oxidisability; 2, from stable aspect relatively, be example with the representative substances dichloroisocyanuric acid sodium, normal temperature is deposited available chlorine reduction half a year less than 1%, is far superior to hypochlorous acid (salt) the class material of easy decomposition failure under the room temperature; 3, contain the N atom in the used isocyanuric acid molecular structure of the present invention, it has the effect of potential and metal-complexing complexing again in as oxygenant.This polishing fluid is that the oxygenant of metal CMP provides more choices, and its polishing speed to metal especially copper increases significantly.
The complexing agent that adds among the present invention can cooperatively interact with oxygenant, this oxygenant can promote complexing agent better by the dissolution rate of acceleration oxidation on metal surface thing and by heteroatomic coordination, quicken the removal speed of oxidation on metal surface thing, further improve polishing performance.
Embodiment
Further specify the present invention below by each embodiment.
Embodiment 1～18
Table 1 illustrates the prescription of the embodiment of the invention 1～18, and the simple mixing of the component among each embodiment can be obtained chemical mechanical polishing liquid of the present invention.
Table 1: the embodiment of the invention 1～18 prescription
Effect embodiment
In order further to embody effect of the present invention, select embodiments of the invention 11～18 and the contrast polishing fluid 4 that does not contain the common contrast polishing fluid 1～3 of compound among the present invention and do not contain complexing agent to compare, carried out the polishing test, result such as table 2.
Polishing condition is: polishing machine platform is Logitech (Britain) 1PM52 type, 12 inches politex polishing pads (pad), 4cm*4cm square Wafer, grinding pressure 3psi, 70 rev/mins of grinding stage (polishing table) rotating speeds, 150 rev/mins of grinding head (carrier) rotation rotating speeds, polishing fluid rate of addition 100ml/min.
Table 2: contrast polishing fluid 1～4 and polishing fluid of the present invention 11～18 prescription and metal removal rate
By table 2 contrast polishing fluid 1,2,3 as can be seen, under the situation of not adding the used material of the present invention, use abrasive grains silicon-dioxide separately, no matter be under acidity or alkaline condition, to metal, for example: the metal removal rate of copper and tungsten is very low.And the present invention is after adding the isocyanuric acid (or its salt) that halogen replaces, and to the polishing speed (removal speed) of metal, especially copper has the raising of highly significant.For example: under the situation that has 1% dichloroisocyanuric acid salt to exist, the removal speed of copper significantly rises to 14207A/Min by 107A/Min, has improved more than 130 times.
Contrasted as can be seen by table 2 contrast polishing fluid 4 and embodiment 13, the complexing agent of adding can cooperatively interact with oxygenant, further improves polishing performance.
To sum up, novel oxygenant used in the present invention has the strong oxidizing property energy, for the oxygenant of metal CMP provides new selection, polishing fluid provided by the invention has good polishing performance and stability, and its polishing speed to metal especially copper increases significantly.
Claims (18)
1. a chemical mechanical polishing liquid comprises abrasive grains, water, the isocyanuric acid of halogen-containing replacement and/or its salt and complexing agent.
2. polishing fluid according to claim 1 is characterized in that: the isocyanuric acid of described halogen-containing replacement and/or its salt are to be selected from one or more of dichloroisocyanuric acid, dibromo isocyanuric acid, TCCA (Trichloroisocyanuric acid), tribromo isocyanuric acid, bromine chlorine isocyanuric acid and their salt.
3. as polishing fluid as described in the claim 2, it is characterized in that the isocyanuric acid of described halogen-containing replacement and/or its salt are dichloroisocyanuric acid and/or its salt.
4. polishing fluid according to claim 1, it is characterized in that: described salt is metal-salt and/or non-metal salt.
5. polishing fluid as claimed in claim 4 is characterized in that: described salt is for being selected from sodium salt, sylvite, one or more of ammonium salt and quaternary ammonium salt.
6. polishing fluid according to claim 1, it is characterized in that: the isocyanuric acid of described halogen-containing replacement and/or its salts contg are 0.01～15wt%.
7. as polishing fluid as described in the claim 6, it is characterized in that: the isocyanuric acid of described halogen-containing replacement and/or the content of its salt are 1～5wt%.
8. polishing fluid according to claim 1, it is characterized in that: described abrasive grains is for being selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.
9. as polishing fluid as described in the claim 8, it is characterized in that: described abrasive grains is SiO
2
10. polishing fluid according to claim 1 is characterized in that: described abrasive grains particle diameter 30～200nm.
11. as polishing fluid as described in the claim 10, it is characterized in that: described abrasive grains particle diameter is 50～120nm.
12. polishing fluid according to claim 1, it is characterized in that: the content of described abrasive grains is mass percent 0.1～30wt%.
13. as polishing fluid as described in the claim 12, it is characterized in that: the content of described abrasive grains is mass percent 1～10wt%.
14. polishing fluid according to claim 1, it is characterized in that: described complexing agent is triazole class, thiazoles, organic phosphine acids complexing agent.
15. as polishing fluid as described in the claim 14, it is characterized in that: described complexing agent is benzotriazole, mercapto benzothiazole, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid.
16. polishing fluid according to claim 1, it is characterized in that: described polishing fluid can also further contain the pH regulator agent.
17. polishing fluid according to claim 1, it is characterized in that: described polishing fluid pH value is 2～13.
18. as polishing fluid as described in the claim 17, it is characterized in that: described polishing fluid pH value is 2～6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810203712A CN101747840A (en) | 2008-11-28 | 2008-11-28 | Chemical-mechanical polishing solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810203712A CN101747840A (en) | 2008-11-28 | 2008-11-28 | Chemical-mechanical polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101747840A true CN101747840A (en) | 2010-06-23 |
Family
ID=42475473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810203712A Pending CN101747840A (en) | 2008-11-28 | 2008-11-28 | Chemical-mechanical polishing solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101747840A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103100965A (en) * | 2013-02-05 | 2013-05-15 | 中国电子科技集团公司第四十六研究所 | InP single crystal wafer twin polishing method and device |
| CN108795296A (en) * | 2017-04-27 | 2018-11-13 | 天津西美科技有限公司 | Nano-titanium dioxide polishing fluid |
-
2008
- 2008-11-28 CN CN200810203712A patent/CN101747840A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103100965A (en) * | 2013-02-05 | 2013-05-15 | 中国电子科技集团公司第四十六研究所 | InP single crystal wafer twin polishing method and device |
| CN108795296A (en) * | 2017-04-27 | 2018-11-13 | 天津西美科技有限公司 | Nano-titanium dioxide polishing fluid |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100623 |