CN101741359A - IGBT control method and device for powered vehicle - Google Patents
IGBT control method and device for powered vehicle Download PDFInfo
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- CN101741359A CN101741359A CN200810179020A CN200810179020A CN101741359A CN 101741359 A CN101741359 A CN 101741359A CN 200810179020 A CN200810179020 A CN 200810179020A CN 200810179020 A CN200810179020 A CN 200810179020A CN 101741359 A CN101741359 A CN 101741359A
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- 239000000758 substrate Substances 0.000 claims description 15
- 238000005070 sampling Methods 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 7
- 230000005622 photoelectricity Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 3
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Abstract
The invention discloses an IGBT control method and a device for powered vehicle. The method comprises controlling the current passing through IGBT and the working state of the IGBT; carrying out logical OR operation on the PWM drive signal for driving the upper bridge arm of IGBT and the PWM drive signal for driving the lower bridge arm of IGBT; detecting the dead zone time of rising edge and falling edge in one PWM period by the signals after carrying out logical OR operation; and controlling the IGBT to stop working when the detection result is that the dead zone time in one PWM period is less than two. The method and the device for implementing the method can effectively control the usage of IGBT for powered vehicle, thus ensuring the normal running of the powered vehicle.
Description
Technical field
The present invention relates to igbt (IGBT), particularly a kind of power car IGBT control method and device.
Background technology
Development along with manufacture technique of power electronic device, input impedance is big, driving power is little, switching loss is hanged down characteristics such as reaching the operating frequency height because of it has for high-performance, jumbo igbt (IGBT), is widely applied in the power car driver.In the use of IGBT; use owing to device is long-time or collector current is excessive instantaneous overheated phenomenon occurs through regular meeting; and the bad lasting overheated meeting that causes of dispelling the heat makes the IGBT short circuit; if and excessive collector electrode-emitter and the grid-emitter that also can cause of electric current punctures, thereby makes the IGBT short circuit.So adopt usually in the prior art when the voltage that detects between the collector and emitter and protect IGBT, the method for protecting IGBT by the junction temperature of IGBT is also arranged in the prior art at once above the method that its reference voltage value just turn-offs IGBT.But these methods still can not be avoided the damage of IGBT.
Summary of the invention
The objective of the invention is to protect the not high shortcoming of fail safe of IGBT, a kind of method and apparatus of more effectively avoiding the impaired power car of IGBT with IGBT control is provided at the voltage protection strategy that uses in the prior art and temperature protection strategy.
The present inventor thinks in the process that IGBT uses, must insert Dead Time between the drive signal PWM of its upper and lower bridge arm, because if this dead band time disappears or reduced the drive signal conducting that will make upper and lower bridge arm, thereby can damage IGBT, also can blast in the time of serious.And in the prior art not the PWM drive signal to the upper and lower bridge arm of IGBT control to guarantee having any measure of Dead Time, so can not avoid the damage of IGBT fully.And the present inventor finds, meets the requirements if can detect and judge whether the Dead Time of a PWM in the cycle, then can in time stop the work of IGBT, thus can avoid Dead Time to disappear or when reducing to the damage of IGBT.
Power car provided by the invention comprises with the IGBT control method: control is by the electric current of IGBT and the operating state of IGBT; This method also comprises carries out the logic OR computing to the PWM drive signal of brachium pontis under PWM drive signal that drives the last brachium pontis of IGBT and the driving IGBT; Dead Time to PWM of the input after logic OR computing rising edge and trailing edge in the cycle; When testing result is that the Dead Time of a PWM in the cycle is less than two time control IGBT quits work.
Power car provided by the invention comprises controller with the IGBT control device, and this controller is used to control the operating state by electric current and the IGBT of IGBT; Wherein, this device also comprises the logic OR module that is connected with controller, be used for PWM drive signal that drives the last brachium pontis of IGBT and the PWM drive signal that drives brachium pontis under the IGBT are carried out the logic OR computing, and the signal after the logic OR computing is sent to described controller, described controller also is used for the Dead Time to PWM of the input after logic OR computing rising edge and trailing edge in the cycle, and when testing result be the Dead Time of a PWM in the cycle when being less than two control IGBT quit work.
Power car provided by the invention detects by the Dead Time to the PWM drive signal of IGBT upper and lower bridge arm with IGBT control method and device judges whether the IGBT upper and lower bridge arm conducting situation occurs, when being less than two, the Dead Time of a PWM in the cycle judge that the IGBT dead band disappears, it is the conducting of IGBT upper and lower bridge arm, and control IGBT quits work under the situation of IGBT upper and lower bridge arm conducting, has avoided effectively because the IGBT short circuit that the Dead Time disappearance of the PWM drive signal of IGBT upper and lower bridge arm causes.
Description of drawings
Fig. 1 is the structure chart of power car provided by the invention with the IGBT control device;
Fig. 2 is the schematic diagram of power car provided by the invention with last brachium pontis drive signal and the following brachium pontis drive signal of the IGBT in the PWM cycle of IGBT;
Fig. 3 is the last brachium pontis drive signal of IGBT provided by the invention and the signal schematic representation after the processing of following brachium pontis drive signal process logic OR;
Fig. 4 is the structured flowchart of power car provided by the invention with the preferred implementation of IGBT control device.
Fig. 5 is the flow chart of power car provided by the invention with the IGBT control method;
Fig. 6 is the flow chart of power car provided by the invention with the preferred implementation of IGBT control method;
Fig. 7 is the flow chart of power car provided by the invention with another preferred implementation of IGBT control method.
Embodiment
Be described in further detail with IGBT control method and device below in conjunction with accompanying drawing power car provided by the invention.
Fig. 1 is the structure chart of power car provided by the invention with the IGBT control device, and as shown in Figure 1, device provided by the invention comprises controller 4, and this controller 4 is used to control the operating state by electric current and the IGBT of IGBT; Wherein, this device also comprises the logic OR module 22 that is connected with controller 4, be used for PWM drive signal that drives the last brachium pontis of IGBT and the PWM drive signal that drives brachium pontis under the IGBT are carried out the logic OR computing, and the signal after the logic OR computing is sent to described controller 4, described controller 4 also is used for the Dead Time to PWM of the input after logic OR computing rising edge and trailing edge in the cycle, and when testing result be the Dead Time of a PWM in the cycle when being less than two control IGBT quit work.
Wherein the output of this logic OR module 22 is connected with the input of described controller 4, and is used for PWM drive signal that drives the last brachium pontis of IGBT and the PWM drive signal that drives brachium pontis under the IGBT are carried out the logic OR computing.The last brachium pontis drive signal of IGBT and following brachium pontis drive signal normally have the square-wave signal of same frequency, but the rising edge and the trailing edge of last brachium pontis drive signal and following brachium pontis drive signal are different.The drive signal of last brachium pontis and following brachium pontis is carried out logic OR handle between the drive signal of the last brachium pontis just can know this IGBT and following brachium pontis whether have Dead Time.This dead band time is when PWM exports, for the protection period that brachium pontis and following brachium pontis can be provided with because conducting simultaneously takes place the switching speed problem.In order to make the IGBT reliable operation, avoid being necessary to be provided with Dead Time, just turn-off time upper and lower bridge arm while because the turn-off delay effect causes the upper and lower bridge arm conducting.The brachium pontis that Dead Time can be avoided late effect effectively and be caused does not turn-off fully, and another brachium pontis is in conducting state, thereby avoids module to be damaged.It is to well known to a person skilled in the art technology that this logic OR is handled.Fig. 2 is the schematic diagram of power car provided by the invention with last brachium pontis drive signal and the following brachium pontis drive signal of the IGBT in the PWM cycle of IGBT, as shown in Figure 2, a is the drive signal that described IGBT goes up brachium pontis, b is the drive signal of brachium pontis under the described IGBT, sqt is a Dead Time, and T is the PWM cycle of IGBT.Because high level and low level obtain high level after handling through logic OR, low level and low level obtain low level after handling through logic OR, so a and b are carried out will obtaining after logic OR is handled the last brachium pontis drive signal of IGBT as shown in Figure 3 and the signal schematic representation after the processing of following brachium pontis drive signal process logic OR, Dead Time sqt among Fig. 3 is a low level, and at the PWM of IGBT two Dead Time sqt is arranged in the cycle when normally moving.This signal as shown in Figure 3 is sent to controller 4 just can be controlled IGBT timely and accurately it is not damaged, if controller 4 detects and just controls IGBT when Dead Time in a PWM cycle is less than two and quit work, may occur having ganged up because at this moment the drive signal of brachium pontis and the drive signal of following brachium pontis have been described, must stop the use of IGBT immediately in order to avoid damage IGBT; If controller 4 detects two Dead Times and just controls the IGBT operate as normal.
Described device also comprises photoelectric isolation module 21, the output of this photoelectric isolation module 21 is connected with described logic OR module 22, and be used for PWM drive signal that drives the last brachium pontis of IGBT and the PWM drive signal that drives brachium pontis under the IGBT are carried out isolation processing, and the result after will handling is input to the input of this logic OR module 22.This photoelectric isolation module 21 can be selected the photoelectric isolation module of high speed photo coupling for use, as TLP559.The last brachium pontis of this IGBT and the PWM drive signal of following brachium pontis are that the grid from IGBT takes out, and two signals that will take out then pass through photoelectric isolation module 21 respectively, and to remove interference signal, the filtering clutter so just can detect Dead Time more accurately.
The present invention can also make the IGBT collector electrode of this IGBT and the V between the emitter by the maximum current of controlling by IGBT
CEMagnitude of voltage is no more than V
CEReference voltage value, thus the shutoff of this IGBT stoped, thus guaranteed that power car can stable travelling, and brought facility to the driver.Fig. 4 is the structured flowchart of power car provided by the invention with the preferred implementation of IGBT control device.This device also comprises the voltage sampling circuit 3 that is connected with controller 4, is used to gather the V between IGBT collector electrode and the emitter
CEMagnitude of voltage is with this V
CEMagnitude of voltage and V
CEReference voltage value compares, and comparative result is fed back to described controller 4; It is V that described controller 4 also is used for working as comparative result
CEMagnitude of voltage is greater than or equal to V
CEControl IGBT quits work during reference voltage value, when comparative result is V
CEMagnitude of voltage is lower than V
CEControl IGBT operate as normal during reference voltage value.Wherein said V
CEReference voltage value can be got the magnitude of voltage between 2 to 5 volts.
This voltage sampling circuit 3 comprises interconnected detection module 31 and comparison module 32, and this detection module 31 is used to detect the voltage V between the collector and emitter of insulation bipolar transistor IGBT
CEMagnitude of voltage.The output of comparison module 32 is connected with the input of described controller 4, is used for this V
CEMagnitude of voltage and V
CEReference voltage value compares, and comparative result is fed back to described controller 4.When comparative result is V
CEMagnitude of voltage is greater than or equal to V
CEDuring reference voltage value, then controller 4 sends signal IGBT is quit work to prevent to damage three phase full bridge IGBT; When comparative result is V
CEMagnitude of voltage is lower than V
CEDuring reference voltage value, then controller 4 sends signal and makes the IGBT operate as normal.For the specific operation process of voltage sampling circuit 3, can be the patent of invention of the denomination of invention of CN 1354561A referring to publication number for " a kind of insulation bipolar transistor IGBT drive protection circuit ".
Wherein this device also comprises the temperature sampling circuit 1 that is connected with controller 4, be used to gather the temperature value of the substrate of IGBT, described temperature value is modified to the junction temperature of IGBT, and the relation that allows the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of IGBT to corresponding to this junction temperature lowest high-current value, and this lowest high-current value is sent to controller 4; The electric current that controller 4 also is used to control by IGBT is no more than this lowest high-current value.Described temperature sampling circuit 1 comprises: temperature sensor 11, junction temperature module 12 and processing module 13, described temperature sensor 11 is used to gather the temperature value of the substrate of IGBT, and the output of this temperature sensor 11 is connected with the input of described junction temperature module 12, temperature sensor 11 collects the temperature value on the IGBT substrate of being made by aluminium nitride material in the present embodiment, because described IGBT is fixed on this substrate, so the temperature value of the substrate of IGBT is approximately the temperature value of described IGBT, and the temperature value that collects is sent to junction temperature module 12.This temperature sensor 11 can be the general temperature sensors of those skilled in the art, and as 602F-3500F, the material of substrate is selected aluminium nitride usually for use.
Described junction temperature module 12, be used for described temperature value is modified to the junction temperature of IGBT, the temperature value that this junction temperature equals the substrate of the IGBT that collected adds the junction temperature difference DELTA T of the above IGBT, and the output of this junction temperature module 12 is connected with the input of described processing module 13.The junction temperature of described IGBT equals the temperature value that temperature sensor 11 collects and adds the junction temperature difference DELTA T that each IGBT carries when dispatching from the factory, wherein factor such as the baseplate material of junction temperature difference DELTA T and IGBT, type of cooling is relevant, for each IGBT, Δ T is a stationary temperature value.For three phase full bridge IGBT, so need to gather the temperature value of three IGBT substrates, the maximum temperature value in three temperature values that only need in this case to collect is modified to the junction temperature of IGBT.
Described processing module 13, the relation that is used for allowing the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of described IGBT to corresponding to this junction temperature lowest high-current value, and this lowest high-current value is sent to controller 4, and the output of this processing module 13 is connected with the input of described controller 4.It also is that IGBT carries when dispatching from the factory that the junction temperature of this revised IGBT and IGBT allow the relation of the maximum current that passes through, relation between them can be linear can not be linear also, the IGBT that uses in the present embodiment for example, when its junction temperature was 25 degrees centigrade, the maximum current that this IGBT allows to pass through was 900 amperes.Controller 4 is controlled the electric current that is input to IGBT according to the maximum current that IGBT allows to pass through, and is unlikely to heat up too fast and is damaged thereby effectively control IGBT.This processing module 13 can be selected chips such as AD7862 for use.
Fig. 5 is the flow chart of power car provided by the invention with the IGBT control method, and as shown in the figure, this method comprises: control is by the electric current of IGBT and the operating state of IGBT; Wherein, this method is further comprising the steps of: the PWM drive signal that driving IGBT is gone up brachium pontis is carried out the logic OR computing with the PWM drive signal that drives brachium pontis under the IGBT; Dead Time to PWM of the input after logic OR computing rising edge and trailing edge in the cycle; When testing result is that the Dead Time of a PWM in the cycle is less than two time control IGBT quits work.At first the PWM drive signal of brachium pontis is carried out the logic OR computing under the PWM drive signal of the last brachium pontis of 22 pairs of drivings of the logic OR module in the Dead Time testing circuit 2 IGBT and the driving IGBT, obtains a signal as shown in Figure 3 after the logic OR computing; Transfer the signal to the then in the controller 4, controller 4 detects the Dead Time of interior rising edge of a PWM cycle and trailing edge, when controller 4 detects just to send when the Dead Time of a PWM in the cycle is less than two to instruct IGBT is quit work, when controller 4 detects a PWM cycle memory at two Dead Times, just send instruction and make the IGBT operate as normal.
Fig. 6 is the flow chart of power car provided by the invention with the preferred implementation of IGBT control method, also be included in the method and carry out before the logic OR computing driving PWM drive signal that IGBT goes up the PWM drive signal of brachium pontis and drive brachium pontis under the IGBT, the PWM drive signal that respectively described IGBT is gone up the PWM drive signal of brachium pontis and drive brachium pontis under the IGBT is carried out the photoelectricity isolation processing.So just can remove the interference of PWM drive signal, guaranteeing obtaining Dead Time signal more accurately, thereby make controller 4 can effectively control the operating state of IGBT.
Fig. 7 is the flow chart of power car provided by the invention with another preferred implementation of IGBT control method.This method also comprises: gather the V between IGBT collector electrode and the emitter
CEMagnitude of voltage; With this V
CEMagnitude of voltage and V
CEReference voltage value compares; Work according to comparative result control IGBT: when comparative result is V
CEMagnitude of voltage is greater than or equal to V
CEControl IGBT quits work during reference voltage value, when comparative result is V
CEMagnitude of voltage is lower than V
CEControl IGBT operate as normal during reference voltage value.Wherein said V
CEReference voltage value can be got the magnitude of voltage between 2 to 5 volts.
And this method also comprises: the temperature value on the substrate of collection IGBT; Described temperature value is modified to the junction temperature of IGBT; The relation that allows the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of IGBT to corresponding to the junction temperature of this IGBT lowest high-current value; Control is no more than described lowest high-current value by the electric current of IGBT.
As shown in Figure 7, at first the detection module in described voltage sampling circuit 3 31 is gathered V between IGBT collector electrodes and the emitter
CEIn the time of magnitude of voltage, the temperature sensor 11 in the described temperature sampling circuit 1 is the temperature value on the substrate of gathering IGBT also; Detection module 31 is with the V that collects then
CEMagnitude of voltage is sent in the comparison module 32 in the described voltage sampling circuit 3, makes this V
CEMagnitude of voltage and V
CEReference voltage value compares, and the signal after will comparing is sent in the controller 4, at this moment temperature sensor 11 also is sent to the temperature value that collects the junction temperature module 12 of described temperature sampling circuit 1, described temperature value is modified to the junction temperature of IGBT, the temperature value that the junction temperature of this IGBT equals the substrate of the IGBT that collected adds the junction temperature difference DELTA T of the above IGBT, subsequently this junction temperature is sent in the processing module 13 of described temperature sampling circuit 1, the relation that allows the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of IGBT to corresponding to the junction temperature of this IGBT lowest high-current value, and this lowest high-current value is sent in the controller 4; Secondly controller 4 maximum current that permission is passed through according to IGBT is controlled the electric current by IGBT, thereby this IGBT can stably be moved, and controller 4 is according to V
CEMagnitude of voltage and V
CEThe comparative result of reference voltage value is controlled the work of IGBT: if comparative result is V
CEMagnitude of voltage is greater than or equal to V
CEDuring reference voltage value, controller will send instruction quits work control IGBT, if comparative result is V
CEMagnitude of voltage is lower than V
CEWill control the IGBT operate as normal during reference voltage value, to guarantee the cruising of power car.
Claims (11)
1. power car IGBT control method, this method comprises: control is by the electric current of IGBT and the operating state of IGBT; Wherein, this method is further comprising the steps of:
Driving IGBT is gone up the PWM drive signal of brachium pontis and carry out the logic OR computing with the PWM drive signal that drives brachium pontis under the IGBT;
Dead Time to PWM of the input after logic OR computing rising edge and trailing edge in the cycle;
When testing result is that the Dead Time of a PWM in the cycle is less than two time control IGBT quits work.
2. method according to claim 1, wherein, this method also is included in carries out before the logic OR computing, respectively the PWM drive signal of the last brachium pontis of described IGBT is carried out the photoelectricity isolation processing with the PWM drive signal that drives brachium pontis under the IGBT.
3. method according to claim 1, wherein, this method also comprises:
Gather the V between IGBT collector electrode and the emitter
CEMagnitude of voltage;
With this V
CEMagnitude of voltage and V
CEReference voltage value compares;
Work according to comparative result control IGBT: when comparative result is V
CEMagnitude of voltage is greater than or equal to V
CEControl IGBT quits work during reference voltage value, when comparative result is V
CEMagnitude of voltage is lower than V
CEControl IGBT operate as normal during reference voltage value.
4. method according to claim 3, wherein, described V
CEReference voltage value can be got the magnitude of voltage between 2 volts to 5 volts.
5. according to claim 1 or 3 described methods, this method also comprises:
Temperature value on the substrate of collection IGBT;
Described temperature value is modified to the junction temperature of IGBT;
The relation that allows the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of IGBT to corresponding to the junction temperature of this IGBT lowest high-current value;
Control is no more than described lowest high-current value by the electric current of IGBT.
6. power car IGBT control device, this device comprises controller (4), this controller (4) is used to control the operating state by electric current and the IGBT of IGBT; Wherein, this device also comprises the logic OR module (22) that is connected with controller (4), be used for PWM drive signal that drives the last brachium pontis of IGBT and the PWM drive signal that drives brachium pontis under the IGBT are carried out the logic OR computing, and the signal after the logic OR computing is sent to described controller (4), described controller (4) also is used for the Dead Time to PWM of the input after logic OR computing rising edge and trailing edge in the cycle, and when testing result be a PWM when Dead Time is less than two in the cycle control IGBT quit work.
7. device according to claim 6, wherein, this device also comprises photoelectric isolation module (21), the output of this photoelectric isolation module (21) is connected with the input of described logic OR module (22), and be used for PWM drive signal that drives the last brachium pontis of IGBT and the PWM drive signal that drives brachium pontis under the IGBT are carried out isolation processing, and the result after will handling is input to the input of described logic OR module (22).
8. device according to claim 6, wherein, this device also comprises the voltage sampling circuit (3) that is connected with controller (4), is used to gather the V between IGBT collector electrode and the emitter
CEMagnitude of voltage is with this V
CEMagnitude of voltage and V
CEReference voltage value compares, and comparative result is fed back to described controller (4); It is V that described controller (4) also is used for working as comparative result
CEMagnitude of voltage is greater than or equal to V
CEControl IGBT quits work during reference voltage value, when comparative result is V
CEMagnitude of voltage is lower than V
CEControl IGBT operate as normal during reference voltage value.
9. device according to claim 8, wherein, described V
CEReference voltage value can be got the magnitude of voltage between 2 volts to 5 volts.
10. device according to claim 6, wherein, this device also comprises the temperature sampling circuit (1) that is connected with controller (4), be used to gather the temperature value of the substrate of IGBT, described temperature value is modified to the junction temperature of IGBT, and the relation that allows the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of IGBT to corresponding to this junction temperature lowest high-current value, and this lowest high-current value is sent to controller (4); The electric current that controller (4) also is used to control by IGBT is no more than this lowest high-current value.
11. device according to claim 10, wherein, described temperature sampling circuit (1) comprising: temperature sensor (11), junction temperature module (12) and processing module (13), the output of this temperature sensor (11) is connected with the input of described junction temperature module (12), the output of this junction temperature module (12) is connected with the input of described processing module (13), the output of this processing module (13) is connected with the input of described controller (4), described temperature sensor (11) is used to gather the temperature value of the substrate of IGBT, and the temperature value that collects is sent to described junction temperature module (12); Described junction temperature module (12) is used for described temperature value is modified to the junction temperature of IGBT, and revised junction temperature is sent to described processing module (13), and the temperature value that this junction temperature equals the substrate of the IGBT that collected adds the junction temperature difference DELTA T of the above IGBT; The relation that described processing module (13) is used for allowing the maximum current that passes through according to the junction temperature of revised IGBT and IGBT converts the junction temperature of described IGBT to corresponding to this junction temperature lowest high-current value, and this lowest high-current value is sent to controller (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101790204A CN101741359B (en) | 2008-11-25 | 2008-11-25 | IGBT control method and device for powered vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101790204A CN101741359B (en) | 2008-11-25 | 2008-11-25 | IGBT control method and device for powered vehicle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101741359A true CN101741359A (en) | 2010-06-16 |
| CN101741359B CN101741359B (en) | 2012-02-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101790204A Expired - Fee Related CN101741359B (en) | 2008-11-25 | 2008-11-25 | IGBT control method and device for powered vehicle |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107707164A (en) * | 2016-08-08 | 2018-02-16 | 东莞市能机电技术有限公司 | A kind of step actuator system and its control PWM sequential and the method in dead band |
| CN111413604A (en) * | 2018-12-18 | 2020-07-14 | 比亚迪股份有限公司 | Junction temperature estimation method and device, motor controller and vehicle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4531500B2 (en) * | 2004-01-06 | 2010-08-25 | 三菱電機株式会社 | Semiconductor device and semiconductor device module |
| JP4442348B2 (en) * | 2004-07-22 | 2010-03-31 | 株式会社日立製作所 | Power converter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107707164A (en) * | 2016-08-08 | 2018-02-16 | 东莞市能机电技术有限公司 | A kind of step actuator system and its control PWM sequential and the method in dead band |
| CN107707164B (en) * | 2016-08-08 | 2020-03-17 | 东莞市一能机电技术有限公司 | Stepping driver system and method for controlling PWM time sequence and dead zone |
| CN111413604A (en) * | 2018-12-18 | 2020-07-14 | 比亚迪股份有限公司 | Junction temperature estimation method and device, motor controller and vehicle |
| CN111413604B (en) * | 2018-12-18 | 2022-01-07 | 比亚迪股份有限公司 | Junction temperature estimation method and device, motor controller and vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101741359B (en) | 2012-02-29 |
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