CN101741013A - Nitride-based semiconductor laser device and optical pickup - Google Patents

Nitride-based semiconductor laser device and optical pickup Download PDF

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Publication number
CN101741013A
CN101741013A CN200910222885A CN200910222885A CN101741013A CN 101741013 A CN101741013 A CN 101741013A CN 200910222885 A CN200910222885 A CN 200910222885A CN 200910222885 A CN200910222885 A CN 200910222885A CN 101741013 A CN101741013 A CN 101741013A
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layer
nitride
based semiconductor
semiconductor laser
rotten
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龟山真吾
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Abstract

A nitride-based semiconductor laser device includes a facet coating film including an alteration preventing layer formed on a light reflecting side facet of a nitride-based semiconductor element layer and a reflectance control layer formed on the alteration preventing layer. The reflectance control layer is formed by a high refractive index layer and a low refractive index layer which are alternately stacked, the alteration preventing layer is constituted by stacking at least two layers, each of which is formed by a dielectric layer made of a nitride, an oxide or an oxynitride. The alteration preventing layer has a first layer made of a nitride in contact with the light reflecting side facet, and a thickness of each of the layers constituting the alteration preventing layer is smaller than that of the high refractive index layer and is smaller than that of the low refractive index layer.

Description

Nitride-based semiconductor laser device and optical take-up apparatus
The application's cross-reference
The application quotes priority application file Japanese patent application JP2008-298495, nitride-based semiconductor laser device, on November 21st, 2008, Guishan Mountain true I (Shingo Kameyama).
Technical field
The present invention relates to nitride-based semiconductor laser device and optical take-up apparatus, relate in particular to the nitride-based semiconductor laser device and the optical take-up apparatus that are formed with the dielectric multilayer film at the resonator end face.
Background technology
In recent years, as the light source of high density optical disc systems, the short wavelengthization of expectation realization laser and high outputization, therefore exploitation has the blue violet semiconductor laser of the oscillation wavelength lambda of employing nitride-based semiconductor material for about 405nm.
In existing nitride-based semiconductor laser device, on the light emitting side end face and light reflection side end face that constitute a pair of resonator end face, so that the higher mode of reflectivity of the luminance factor light emitting side end face of light reflection side end face is formed with dielectric multilayer film (end face coverlay) respectively.
Especially, being formed at the most utilization of end face coverlay of light reflection side end face will be by SiO 2, Al 2O 3, Si 3N 4And ZrO 2The layer that forms Deng wherein two kinds of dielectrics is with the alternately laminated reflectance coating that forms of blooming (=thickness * refractive index) of λ/4, to obtain high reflectivity.And, between this reflectance coating and light reflection side end face,, be formed with the dielectric layer different with reflectance coating in order to prevent the reaction of the peeling off of reflectance coating, nitride-based semiconductor and reflectance coating.Such nitride-based semiconductor laser device is for example opened 2007-059897 communique, (Japan) spy (Japan) spy and is opened 2007-109737 communique and (Japan) spy to open the 2007-243023 communique open.
Open in the nitride-based semiconductor laser device of 2007-059897 communique record above-mentioned (Japan) spy, for example, form the dielectric film that forms by AlxOy of the dielectric film that forms by AlxOy of thickness and thickness at light reflection side end face after, be formed with and have the SiO of the thickness of 67nm with 40nm with 20nm 2ZrO with thickness with 44nm 2Alternately laminated six pairs of speculums that form.
In addition, open in the nitride-based semiconductor laser device of 2007-109737 communique record above-mentioned (Japan) spy, for example, form the silicon nitride layer of thickness at light reflection side end face after with 51nm, the oxide skin(coating) that will have the thickness of 69nm alternately forms 12 layers with the silicon nitride layer with thickness of 51nm, is formed with the oxide skin(coating) of the thickness with 137nm at last.
In addition, open in the nitride-based semiconductor laser device of 2007-243023 communique record above-mentioned (Japan) spy, for example, form the amorphous aluminium oxide of thickness at light reflection side end face after, alternately be formed with 4 layers of silicon oxide film and oxidation titanium film with thickness of 46nm with thickness of 71nm with 80nm.
But, opening 2007-059897 communique, (Japan) special flat 2007-109737 communique and (Japan) spy above-mentioned (Japan) spy opens in the nitride-based semiconductor laser device of the disclosed prior art of 2007-243023 communique, under the big situation of light output, take place easily the end face coverlay of light reflection side deterioration, peel off, especially deterioration takes place in thermal energy and the light energy relatively large end face coverlay near a side of light reflection side end face easily.In addition, when the part generation deterioration of end face coverlay, there are the following problems: the deterioration zone expansion towards periphery easily of the increase of the change of refractive index and light absorption has taken place, and the optical characteristics to end face coverlay integral body exerts an influence easily.Consequently, there are the stability of operating characteristics of laser diode and the problem of reliability decrease.
Summary of the invention
Inventor of the present invention is through with keen determination research, find: by the dielectric multilayer film that is formed between reflectance coating and the semiconductor element in the end face coverlay that makes prior art is following structures, even when carrying out high output action, also can access sufficient reliability.
That is, the nitride-based semiconductor laser device of a first aspect of the present invention comprises: the nitride-based semiconductor device layer, and it has light emitting side end face and light reflection side end face; And end face coverlay, it comprises that being formed on rotten on the light reflection side end face prevents layer and be formed on the rotten reflectivity key-course that prevents on the layer, the reflectivity key-course is made of alternately laminated high refractive index layer and low-index layer, the rotten layer that prevents is laminated with two-layer above layer, and each layer is respectively by utilizing nitride, the dielectric layer that oxide or nitrogen oxide form constitutes, the rotten layer that prevents has the ground floor that the dielectric layer by utilizing nitride to form that joins with light reflection side end face constitutes, constitute the thickness of the thickness of rotten each layer that prevents layer less than high refractive index layer, and less than the thickness of low-index layer.
In addition, in the present invention, " light emitting side end face " and " light reflection side end face " according to being formed at a pair of resonator end face of nitride-based semiconductor laser device, and the magnitude relationship of the luminous intensity of the laser that penetrates from each end face is distinguished.That is, the relatively large side of luminous intensity of the laser that penetrates from end face is a light emitting side end face, and a less relatively side is the reflection side end face.In addition, in the present invention, so-called " reflectivity key-course " comes down to the generalized concept of the layer of digital reflex laser.In addition, in the present invention, reach " low-refraction " about " high index of refraction ", constitute in two kinds of dielectric layers of reflectivity key-course, the relatively large side of refractive index is a high refractive index layer, and the less relatively side of refractive index is a low-index layer.
In the nitride-based semiconductor laser device of a first aspect of the present invention, as mentioned above, by between light reflection side end face and reflectivity key-course, forming the rotten layer that prevents, therefore the distance that can separate reflectivity key-course and light reflection side end face can reduce thermal energy and the light energy that acts on the reflectivity key-course.Consequently, each layer that constitutes the reflectivity key-course is not easy rotten or deterioration, so when carrying out high output action, also can suppress of the variation of peeling off, reach the characteristic reflectivity of end face coverlay of end face coverlay, can improve the stability and the reliability of the operating characteristics of nitride-based semiconductor laser device from light reflection side end face.
At this moment, prevent on the turn in the layer, on light reflection side end face, be laminated with the little and also littler layer of a plurality of thickness than the thickness of low-refraction than high refractive index layer.Thus, in the resonator end face side of easy deterioration, take place under the situation of rotten or deterioration even prevent the one deck in the layer on the turn, its deterioration also stops at the interface of each layer easily, layer rotten or deterioration around therefore can suppressing.In addition, rotten prevent layer, so be difficult for the reflection characteristic of end face coverlay integral body is exerted an influence owing to constitute the rotten thickness of the layer of layer that prevents and set lessly like that as mentioned above.And, as mentioned above, take place under the situation of rotten or deterioration, because its zone is little, so also can suppress the rotten change that prevents the refractive index that layer is whole even prevent the one deck in the layer on the turn.Thus, can make the reflection characteristic that is difficult to end face coverlay integral body exert an influence.
In addition, because it is less as mentioned above to constitute the thickness of rotten each layer that prevents layer, so the stress of each layer can be suppressed less.Thus, be difficult for causing peeling off of each interlayer, and, also can fully relax the stress of thick reflectivity key-course formed thereon.
In addition, constitute by nitride, oxide or nitrogen oxide, so going bad of each layer is difficult for further expansion towards periphery owing to constitute rotten each layer of layer that prevent.Especially in the layer that forms by nitride or nitrogen oxide owing to be not easy to occur in the disengaging of contingent oxygen from layer under the situation of oxide, so preferred utilize by nitride or nitrogen oxide forms layer.
In addition, constitute the rotten ground floor that joins with the reflection side end face that prevent layer, can suppress the diffusion of oxygen contained in outside atmosphere, the end face coverlay to the nitride-based semiconductor device layer by utilizing the dielectric layer that constitutes by nitride.Thus, because the light reflection side end face of nitride-based semiconductor device layer is difficult for oxidation, so be not easy to produce reason non-luminous of the absorption that becomes laser and heating at light reflection side end face again in conjunction with energy level.Consequently, can suppress the generation of the destructive optical damage (COD:Catastrophic OpticalDamage) of light reflection side end.
In the nitride-based semiconductor laser device of above-mentioned first invention, the preferred rotten layer that prevents also has the second layer that the dielectric layer by utilizing oxide or nitrogen oxide to form that joins with a side opposite with light reflection side end face of ground floor constitutes.According to such structure,,, can easily relax the stress that ground floor had that constitutes by nitride so utilize the second layer that joins with ground floor because the second layer and the ground floor that are formed by the material littler than the stress of ground floor join.
In the case, preferred rotten prevent layer also have form respectively with ground floor and and the 3rd layer of constituting of the dielectric layer that joins of the side opposite of the second layer by utilizing nitride to form with ground floor.According to such structure, because prevent to comprise in the layer dielectric layer that a plurality of (ground floors and the 3rd layer this two-layer) are formed by nitride on the turn, so can further suppress the diffusion of oxygen contained in outside atmosphere, the end face coverlay to the nitride-based semiconductor layer.In addition, even between the dielectric layer that forms by these nitride, further be formed with the dielectric layer (second layer) that forms by oxide or nitrogen oxide, because oxygen is difficult to from the dielectric layer diffusion that is formed by this oxide or nitrogen oxide, so can suppress the rotten of the dielectric layer that forms by this oxide or nitrogen oxide, and, can also suppress the rotten oxidation that reaches light reflection side end face of other dielectric layer.
In the nitride-based semiconductor laser device of above-mentioned first aspect, preferred ground floor is AlN.According to such structure, utilize the nitride film that constitutes by AlN, can easily suppress the diffusion of oxygen contained in outside atmosphere, the end face coverlay to nitride-based semiconductor device layer (light reflection side end face).
In having above-mentioned the 3rd layer structure, the preferred second layer is Al 2O 3Or AlON.According to such structure, because utilization is as the Al of oxide-film 2O 3Or, can relax the stress that is applied between the ground floor that forms by nitride and the 3rd layer, so can suppress peeling off of ground floor and the 3rd layer as the AlON of nitrogen oxidation film.
In having above-mentioned the 3rd layer structure, preferred the 3rd layer is AlN.According to such structure, utilize the nitride film that constitutes by AlN, can easily suppress the diffusion of the oxygen that contains in the outside atmosphere to the second layer.Thus, can further suppress the diffusion of oxygen contained in outside atmosphere, the end face coverlay, therefore can suppress rotten layer the peeling off that prevent easily from light reflection side end face to nitride-based semiconductor device layer (light reflection side end face).
In having above-mentioned the 3rd layer structure, the preferred rotten layer that prevents also has the 4th layer that the dielectric layer by utilizing oxide to form that joins with the 3rd layer a side opposite with the second layer constitutes.According to such structure, can be by means of the 4th layer that forms by oxide, easily prevent from the turn to form the light reflectivity key-course on the surface of a side opposite of layer with light reflection side end face.
In the nitride-based semiconductor laser device of above-mentioned first aspect, preferred end face coverlay also comprises and being formed at the rotten boundary layer between layer and the reflectivity key-course, that formed by oxide or nitrogen oxide that prevents.According to such structure, therefore the amount that the distance of reflectivity key-course and light reflection side end face can be separated the thickness of boundary layer can reduce thermal energy and the light energy that acts on the reflectivity key-course.Consequently, can make each layer that constitutes the reflectivity key-course not perishable.In addition, because utilize boundary layer, can relax and putting on the rotten stress that prevents between layer and the reflectivity key-course, so can suppress rotten the peeling off of layer and reflectivity key-course that prevent.
In the case, interfacial layer forms by the layer that joins with the reflectivity key-course with the rotten layer that prevents that layer from joining.According to such structure, because can utilize the material that is suitable for realizing with the close property of reflectivity key-course and the rotten layer separately that prevents layer to form boundary layer, so can inhibitory reflex rate key-course, rottenly prevent the layer separately of layer and peeling off of boundary layer.
In the structure that above-mentioned boundary layer is formed by the layer that joins with reflectivity key-course, the rotten layer separately that prevents layer, preferably the formation boundary layer that joins with the reflectivity key-course layer contains the element identical with the reflectivity key-course.According to such structure, can easily improve and the layer of the formation boundary layer that the reflectivity key-course joins and the close property between the reflectivity key-course.
In the case, the layer of the formation boundary layer that preferably joins with the reflectivity key-course is by SiO 2Form.According to such structure, can easily form the layer (constituting the layer of boundary layer) that can improve with the close property of reflectivity key-course, can suppress simultaneously deterioration optics, heat, therefore can further improve the reliability of the operating characteristics of nitride-based semiconductor laser device.
, preferably contain and the rotten layer identical metallic element that prevent by preventing in layer structure that the layer that joins forms separately of layer with going bad at above-mentioned boundary layer with the layer that prevents layer formation boundary layer that joins that goes bad with the reflectivity key-course.According to such structure, can easily improve and rotten layer and the rotten close property that prevents between the layer that prevents the formation boundary layer that layer joins.
In the case, preferably with the rotten layer of the formation boundary layer that layer joins that prevents by Al 2O 3Form.According to such structure, can easily form and to improve and the rotten layer (constituting the layer of boundary layer) that prevents the close property of layer.
Comprise in the structure of boundary layer that at above-mentioned end face coverlay preferred nitride-based semiconductor device layer also has luminescent layer, is under the situation of λ in the Wavelength of Laser that luminescent layer sends, the blooming that constitutes the layer of boundary layer is set at λ/more than 4.According to such structure, can further improve the reliability of the operating characteristics of nitride-based semiconductor laser device.
Comprise in the structure of boundary layer that at above-mentioned end face coverlay the thickness of layer that preferably constitutes boundary layer is greater than constituting the rotten thickness that prevents each layer of layer.According to such structure, can make the distance of reflectivity key-course and light reflection side end face bigger easily.
In the nitride-based semiconductor laser device of above-mentioned first aspect, rotten each layer of layer that prevent of preferred formation contains identical metallic element.According to such structure, can improve the close property of each interlayer that constituting goes bad prevents layer.
At the above-mentioned second layer is Al 2O 3Or in the structure of AlON, the preferred second layer is formed by AlON, and the ratio of components of the nitrogen of the second layer that is formed by AlON is greater than the ratio of components of oxygen.According to such structure, compare with oxide, nitride by the dielectric layer (second layer) that nitrogen oxide forms, its film density height, and the bonding state of element is also firm, therefore is difficult to go bad.Thus, can further suppress the diffusion of oxygen contained in outside atmosphere, the end face coverlay.In addition, because the ratio of components of the nitrogen of AlON is greater than the ratio of components of oxygen, so can suppress the amount of the contained oxygen of the second layer to ground floor, the 3rd layer of diffusion.
In the nitride-based semiconductor laser device of above-mentioned first aspect, preferred nitride-based semiconductor device layer also has luminescent layer, in the Wavelength of Laser that luminescent layer sends is under the situation of λ, constitutes the rotten blooming that prevents each layer that is formed by dielectric layer of layer and is set at λ/below 4 respectively.According to such structure, owing to can reduce the rotten stress that prevents in the layer, prevent that each layer in the layer from peeling off mutually so can suppress rotten.In addition, the laser that penetrates from light reflection side end face is not subjected to the rotten thickness effect ground of layer that prevents to see through and arrive the reflectivity key-course.Thus, the reflectivity controlled function that can easily suppress to be set to the reflectivity key-course of the reflectivity with hope is subjected to the rotten influence that prevents layer.
In the nitride-based semiconductor laser device of above-mentioned first aspect, rotten each layer that is formed by dielectric layer of layer that prevent of preferred formation has more than about 10nm respectively and the thickness of the scope below about 30nm.According to such structure,, can suppress the rotten situation that each layer in the layer peeled off mutually that prevents owing to can prevent that the stress of each layer in the layer from suppressing lessly with going bad.
In the nitride-based semiconductor laser device of above-mentioned first aspect, preferred low-index layer is formed by oxide or nitrogen oxide, and high refractive index layer is formed by nitride or nitrogen oxide.According to such structure, oxygen is difficult to from the low-index layer diffusion that is clipped by high refractive index layer, and wherein, this high refractive index layer is formed by nitride or nitrogen oxide, and this low-index layer is formed by oxide.Consequently, the rotten of low-index layer can be suppressed, and the oxidation of light reflection side end face can be suppressed.
In addition, in the nitride-based semiconductor laser device of above-mentioned first aspect, preferably constitute the high refractive index layer of reflectivity key-course and the blooming of low-index layer and be respectively λ/4.According to such structure, can make the reflectivity maximization of reflectivity key-course.
In addition, in the nitride-based semiconductor laser device of above-mentioned first aspect, preferred low-index layer and high refractive index layer are many crystallizations.According to such structure, because under many crystalline states, the bonding state of element is more firm, so the thermal diffusivity of each layer becomes higher, and more stable with respect to light energy and thermal energy, so the membranous more difficult variation of each layer.
According to the present invention, can improve the stability and the reliability of the operating characteristics of the nitride-based semiconductor laser device when carrying out high output action.
The optical take-up apparatus of a second aspect of the present invention comprises: nitride-based semiconductor laser device, it comprises nitride-based semiconductor device layer and the end face coverlay with light emitting side end face and light reflection side end face, and this end face coverlay comprises that being formed at rotten on the light reflection side end face prevents layer and be formed at the rotten reflectivity key-course that prevents on the layer; Optical system, the ejaculation light of its control nitride-based semiconductor laser device; And optical detection part, its correlation bright dipping detects, the reflectivity key-course is formed by alternately stacked high refractive index layer and low-index layer, the rotten layer that prevents is laminated with two-layer above layer, and, each layer is made of the dielectric layer that utilizes nitride, oxide or nitrogen oxide to form respectively, the rotten layer that prevents has the ground floor that the dielectric layer by utilizing nitride to form that joins with light reflection side end face constitutes, constitute the thickness of the thickness of rotten each layer that prevents layer less than high refractive index layer, and less than the thickness of low-index layer.
In the optical take-up apparatus of this second aspect, because possess the nitride-based semiconductor laser device that constitutes as mentioned above, so carry out at nitride-based semiconductor laser device under the situation of high output action, also can suppress the end face coverlay from the peeling off and the variation of the characteristic reflectivity of end face coverlay of light reflection side end face, therefore can realize the stability of operating characteristics of nitride-based semiconductor laser device and the optical take-up apparatus that reliability is improved.
Description of drawings
Fig. 1 is the schematic diagram of structure that is used to illustrate the nitride-based semiconductor laser device of the 1st execution mode of the present invention.
Fig. 2 is the sectional view along the A-A line of Fig. 1.
Fig. 3 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device of the 3rd execution mode of the present invention.
Fig. 4 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device of the 6th execution mode of the present invention.
Fig. 5 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device of the 7th execution mode of the present invention.
Fig. 6 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device of the 8th execution mode of the present invention.
Fig. 7 is the stereoscopic figure of schematic configuration of the laser aid of expression nitride-based semiconductor laser device that the 9th execution mode of the present invention is installed.
Fig. 8 is the vertical view under the state that is equipped with behind the lid that unloads lower casing encapsulation of laser aid of nitride-based semiconductor laser device of the 9th execution mode of the present invention.
Fig. 9 is the structure chart of optical take-up apparatus that is built-in with the laser aid of the nitride-based semiconductor laser device that the 9th execution mode of the present invention is installed.
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.
(the 1st execution mode)
At first, with reference to Fig. 1 and Fig. 2, the structure of the nitride-based semiconductor laser device 100 of the 1st execution mode of the present invention is described.Wherein, Fig. 1 is the sectional view of nitride-based semiconductor laser device 100, represents the parallel cross section of ejaculation direction (L direction) with laser.In addition, Fig. 1 represents along the cross section of the B-B line of Fig. 2.
The nitride-based semiconductor laser device 100 of the 1st execution mode of the present invention has the oscillation wavelength lambda of about 405nm, as shown in Figures 1 and 2, comprising: be formed at the semiconductor element layer 2 that constitutes by nitride-based semiconductor on the upper surface ((0001) Ga face) of the substrate 1 that constitutes by n type GaN; Be formed at the p lateral electrode 3 on the semiconductor element layer 2; With the n lateral electrode 4 on the lower surface that is formed at substrate 1 ((0001) N face).In addition, the light emitting side end face 2a and the light reflection side end face 2b of the semiconductor element layer 2 that is vertically formed respectively with respect to the ejaculation direction (L direction) of laser constitute a pair of resonator end face.
Substrate 1 has the thickness of about 100 μ m, is doped with to have about 5 * 10 18Cm -3The oxygen of carrier concentration.In addition, be formed on the upper surface of substrate 1 semiconductor element layer 2 by the n type resilient coating 20 that begins to form successively from substrate 1 side, n type bag (clad) layer 21, n type charge carrier stop 22, n side optical waveguide layer 23, active layer 24, p side optical waveguide layer 25, cap rock 26, p type covering 27 and p side contact layer 28 and the current blocking layer 29 that is formed on the p type covering 27 constitute.In addition, in the 1st execution mode, constitute " luminescent layer " of the present invention by n type charge carrier barrier layer 22, n side optical waveguide layer 23, active layer 24, p side optical waveguide layer 25 and cap rock 26.
N type resilient coating 20, n type covering 21, n type charge carrier barrier layer (carrier blockinglayer) 22 and n side optical waveguide layer 23 respectively by the n type CaN of thickness with about 100nm, have the n type Al of the thickness of about 2 μ m 0.07Ga 0.93N, has the n type Al of the thickness of about 5nm 0.16Ga 0.84The non-doping CaN of N and the thickness with about 100nm constitutes.In addition, doping has an appointment 5 * 10 in each layer 20～22 of said n type 18Cm -3Ge, have about 5 * 10 18Cm -3Carrier concentration.
Active layer 24 has the MQW structure, this MQW structure alternative stacked have thickness with about 20nm by non-doping In 0.02 Ga 0.984 layers the barrier layer that N forms and have about 3nm thickness by non-doping In 0.1 Ga 0.93 layers the trap layer that N forms.
P side optical waveguide layer 25, cap rock 26 and p side contact layer 28 respectively by non-Doped GaN with about 100nm thickness, have the non-doped with Al of about 20nm thickness 0.16Ga 0.84N and have the non-doping In of about 10nm thickness 0.02Ga 0.98N constitutes.
P type covering 27 mixes and has an appointment 4 * 10 19Cm -3Mg, by having about 5 * 10 17Cm -3The p type Al of carrier concentration 0.07Ga 0.93N forms.In addition, p type covering 27 comprises: have the par 27a of about 80nm thickness and have the height of about 320nm and the width of about 1.5 μ m and from the outstanding protuberance 27b of par 27a.Protuberance 27b forms strip, extends going up with the light emitting side end face 2a L direction ([1-100] direction) vertical with light reflection side end face 2b.In addition, p side contact layer 28 only is formed on the protuberance 27b, is formed with the 2c of spine by the protuberance 27b and the p side contact layer 28 of p type covering 27.In addition, as shown in Figure 2, the 2c of spine is formed at from the position of the secund side of element central authorities, and nitride-based semiconductor laser device 100 has the asymmetrical cross sectional shape in the left and right sides.In addition, be formed with thickness on the upper surface of the par 27a of p type covering 27 and on the side of the 2c of spine with about 250nm, by SiO 2The current blocking layer 29 that constitutes.
On semiconductor element layer 2, be formed with the p lateral electrode 3 that constitutes by p side Ohmic electrode 31 and p side pad electrode 32, this p side Ohmic electrode 31 is formed on the p side contact layer of exposing from current blocking layer 29 28, and this p side pad electrode 32 is formed on p side Ohmic electrode 31 and the current blocking layer 29.P side Ohmic electrode 31 is made of Pt layer with about 10nm thickness that forms successively from p side contact layer 28 sides and the Pd layer with about 100nm thickness.In addition, p side pad electrode 32 is made of the Ti layer with about 100nm thickness that forms successively from p side Ohmic electrode 31 and current blocking layer 29 sides, the Au layer that has the Pd layer of about 100nm thickness and have about 3 μ m thickness.In addition, above the par 27a of p type covering 27, be formed with the 32a of wire-bonded portion of p side pad electrode 32.
In addition, n lateral electrode 4 is formed by the Al layer with about 10nm thickness on the lower surface that begins to be formed at successively substrate 1 from substrate 1 side, the Au layer that has the Pd layer of about 20nm thickness and have about 300nm thickness.
On light emitting side end face 2a, be formed with the first end face coverlay 5 that is laminated with a plurality of dielectric layers.The first end face coverlay 5 by form successively from light emitting side end face 2a side have about 10nm thickness by AlN constitute first rotten prevent layer 51 and have about 82nm thickness by Al 2O 3The first reflectivity key-course 52 that forms constitutes.In addition, the reflectivity of the first end face coverlay 5 is set to about 8% by said structure.
At this, in the 1st execution mode, on light reflection side end face 2b, be formed with the second end face coverlay 6 that is laminated with a plurality of dielectric layers.The second end face coverlay 6 by begin to form successively from light reflection side end face 2b side second rotten prevent layer 61, have about 140nm thickness by SiO 2The boundary layer 62 that forms and the second reflectivity key-course 63 constitute.Wherein, the blooming of boundary layer 62 is set at λ/4 (in the refractive index that makes boundary layer 62 is under the situation of n, and the physics thickness of boundary layer 62 is λ/more than (4 * n)).Wherein, the second end face coverlay 6 is an example of " end face coverlay " of the present invention, and second rotten the layer 61 and second emissivity key-course 63 that prevent is respectively that " the rotten layer that prevents " of the present invention reaches an example of " reflectivity key-course ".
In addition, in the 1st execution mode, second rotten prevent layer 61 by the ground floor 61a that constitutes by AlN that begins to form successively from light reflection side end face 2b side, have about 10nm thickness, have about 10nm thickness by Al 2O 3The second layer 61b that constitutes, have the 3rd layer of 61c that constitutes by AlN of about 10nm thickness and have about 10nm thickness by Al 2O 3The 4th layer of 61d that constitutes constitutes.In addition, the second reflectivity key-course 63 have each lamination alternately have 6 layers since second rotten that prevent that layer 61 side from forming successively, have about 70nm thickness by SiO 2The low-index layer 63a that constitutes and have about 50nm thickness by ZrO 2The structure of the high refractive index layer 63b that constitutes.At this, the blooming of each layer of ground floor 61a～4th layer 61d is set at λ/4, and (in the refractive index that makes each layer is under the situation of n, and the physics thickness of each layer is λ/below (4 * n)).In addition, low-index layer 63a and high refractive index layer 63b blooming separately are set at λ/4 (in the refractive index that makes each layer are under the situation of n, and the physics thickness of each layer is λ/(4 * n)).Wherein, ground floor 61a, second layer 61b, the 3rd layer of 61c and the 4th layer of 61d are that " dielectric layer " of the present invention reaches an example of " constituting rotten each layer that prevents layer ".
Utilize said structure, the reflectivity of the second end face coverlay 6 is set to about 98%.Therefore and the reflectivity of the first end face coverlay 5 is set at littler than the reflectivity of the second end face coverlay 6, and the intensity of the laser that penetrates from the first end face coverlay, 5 sides is greater than the intensity of the laser that penetrates from the second end face coverlay, 6 sides.
Then, the manufacturing process to the nitride-based semiconductor laser device 100 of the 1st execution mode of the present invention describes.
In the manufacturing process of nitride-based semiconductor laser device 100, with reference to Fig. 1 and Fig. 2, at first utilize organic metal vapour phase epitaxy (MOVPE) method, after forming n type resilient coating 20, n type covering 21, n type charge carrier barrier layer 22, n side optical waveguide layer 23, active layer 24, p side optical waveguide layer 25, cap rock 26 on the substrate 1 with about 400 μ m thickness successively, having the p type covering 27 and p side contact layer 28 of about 400nm thickness, carry out p type annealing and handle.
Then, after utilizing vacuum vapour deposition to form the p side Ohmic electrode 31 of strip, will be formed with the degree of depth that p side contact layer 28 outside the zone of p side Ohmic electrode 31 and p type covering 27 etch into about 320nm.Thus, the par 27a of p type covering 27 is formed the thickness of about 80nm, and form the 2c of spine of the strip that constitutes by p type covering 27 and p side contact layer 28.In addition, forming current blocking layer 29 on the upper surface of the par 27a of p type covering 27 and on the side of the 2c of spine.
Then, utilize vacuum vapour deposition, on p side Ohmic electrode 31 and current blocking layer 29, form p side pad electrode 32.In addition, after the thickness that makes substrate 1 such as grinding by side below substrate 1 and being about 100 μ m, on the lower surface of substrate 1, form n lateral electrode 4 by vacuum vapour deposition.
Then, the substrate 1 that will be formed with above-mentioned each layer is processed into substrate 1 bar (bar) shape thus along the separation of riving with respect to the vertical direction of direction (L direction) of strip ridge part 2c extension.The a pair of splitting surface that is parallel to each other that utilization obtains by this operation of riving, formation constitutes the light emitting side end face 2a and the light reflection side end face 2b of the resonator end face of each laser diode.
Then, form the first end face coverlay 5 and the second end face coverlay 6 at above-mentioned splitting surface.At first, above-mentioned shaft-like substrate 1 is imported microtron sympathetic response (ECR) spattering filming device, ecr plasma is shone to the light emitting side end face 2a that is formed by splitting surface.Thus, purify light emitting side end face 2a.At this moment, ecr plasma is at N 2Produce in the atmosphere, sputtering target is not applied RF power.
Afterwards, utilize the ECR sputtering method, on light emitting side end face 2a, form the first rotten layer 51 that prevents that constitutes by AlN.At this moment, at Ar and N 2Atmosphere in apply microwave power, produce ecr plasma thus, simultaneously the Al target is applied RF power and carries out sputter.
Then, by the ECR sputtering method, form by Al on the layer 51 first rotten the preventing 2O 3The first reflectivity key-course 52 that constitutes.At this moment, at Ar and O 2Atmosphere in apply microwave power, produce ecr plasma, simultaneously the Al target is applied RF power and carries out sputter.
Then, the same with the process for purifying of light emitting side end face 2a, carry out after the purification of light reflection side end face 2b, by the ECR sputtering method, on light reflection side end face 2b, form the ground floor 61a that constitutes by AlN successively, by Al 2O 3The second layer 61b that constitutes, the 3rd layer of 61c that is made of AlN reach by Al 2O 3The 4th layer of 61d that constitutes.Wherein, the formation condition of ground floor 61a that constitutes by AlN and the 3rd layer of 61c with first rottenly prevent that the formation condition of layer 51 is identical by what AlN constituted equally.In addition, by Al 2O 3Second layer 61b that constitutes and the formation condition of the 4th layer of 61d with equally by Al 2O 3The formation condition of the first reflectivity key-course 52 that constitutes is identical.Like this, on emitting side end face 2b, form the second rotten layer 61 that prevents that constitutes by ground floor 61a～4th layer 61d.
Then, utilize the ECR sputtering method, form by SiO on the layer 61 second rotten the preventing 2The boundary layer 62 that constitutes.At this moment, at Ar and O 2Atmosphere in produce ecr plasma by applying microwave power, simultaneously the Si target is applied RF power and carries out sputter.
Then, by the ECR sputtering method, on boundary layer 62, alternately respectively form 6 layers by SiO 2The low-index layer 63a that constitutes and by ZrO 2The high refractive index layer 63b that constitutes.Wherein, by SiO 2The formation condition of the low-index layer 63a that constitutes same with by same SiO 2The formation condition of the boundary layer 62 that constitutes is identical.In addition, when the formation of high refractive index layer 63b, at Ar and O 2Atmosphere in produce ecr plasma by applying microwave power, simultaneously the Zr target is applied RF power and carries out sputter.Like this, on boundary layer 62, form the second reflectivity key-course 63 that constitutes by low-index layer 63a and high refractive index layer 63b.
At last, by shaft-like substrate 1 is separated along the parallel direction of the direction (L direction) of extending with respect to strip ridge part 2c, form the nitride-based semiconductor laser device 100 of the 1st execution mode.
In the 1st execution mode, as mentioned above, by between the light reflection side end face 2b and the second reflectivity key-course 63, forming the second rotten layer 61 that prevents, the distance of the second reflectivity key-course 63 and light reflection side end face 2b can be separated, therefore can reduce thermal energy and the light energy that acts on the second reflectivity key-course 63.Consequently, constitute each layer 63a of the second reflectivity key- course 63 and 63b is not perishable or deterioration, even when carrying out high output action, also can control the second end face coverlay 6 peeling off from light reflection side end face 2b, and the variation of the characteristic reflectivity of the second end face coverlay 6, can improve the stability and the reliability of the operating characteristics of nitride-based semiconductor laser device 100.
At this moment, at the second rotten layer 61 that prevents, the thickness that is laminated with each layer on light reflection side end face 2b less than the thickness of high refractive index layer 63b and less than the ground floor 61a～4th layer 61d of the thickness of low-index layer 63a.Thus, light reflection side end face 2b side in easy deterioration, even the one deck in formation second goes bad the ground floor 61a～4th layer 61d that prevents layer 61 has taken place under the situation of rotten or deterioration, its deterioration also stops at the interface of each layer of ground floor 61a～4th layer 61d easily, and rotten or deterioration take place the layer around therefore can suppressing.In addition, the second rotten layer 61 that prevents is owing to the thickness of each layer of ground floor 61a～4th layer 61d is set lessly as mentioned above, so be difficult for the reflection characteristic of the second end face coverlay, 6 integral body is impacted.And, even the one deck in constituting the second rotten ground floor 61a～4th layer 61d that prevents layer 61 has as mentioned above taken place under the situation of rotten or deterioration,, therefore can suppress the second rotten change that prevents the refractive index of layer 61 integral body also because its zone is little.Thus, can also make and be difficult for the reflection characteristic of the second end face coverlay, 6 integral body is exerted one's influence.
Especially, making ground floor 61a and the 3rd layer of 61c is AlN, thus, utilizes the nitride film that is made of AlN, can easily suppress the diffusion to light reflection side end face 2b of oxygen contained in outside atmosphere, the second end face coverlay 6.In addition, the second layer 61b that is clipped between ground floor 61a and the 3rd layer of 61c by order is Al 2O 3, can relax the stress that puts between the ground floor 61a that constitutes by AlN and the 3rd layer of 61c, therefore can suppress peeling off of ground floor 61a and the 3rd layer of 61c.Further, be Al by making the 4th layer of 61d 2O 3, can relax by means of the 4th layer of 61d and put on the 3rd layer of 61c constituting by AlN and the stress between the boundary layer 62.Thus, can easily suppress second and rotten prevent layer 61 peeling off from light reflection side end face 2b.
In addition, form lessly as mentioned above, so can suppress the stress of each layer of ground floor 61a～4th layer 61d less because constitute the thickness of each layer of the second rotten ground floor 61a～4th layer 61d that prevents layer 61.Thus, each interlayer of ground floor 61a～4th layer 61d also is not easy to peel off, and, can also relax the stress that is formed at the second thick reflectivity key-course 63 on it fully.In addition, because the thickness of each layer of ground floor 61a～4th layer 61d is 10nm, constitutes the second rotten blooming that prevents each layer of layer 61 and be respectively λ/below 4, so can reduce the second rotten stress that prevents layer 61.Thus, can make second rotten to prevent that peeling off of layer 61 also is not easy to take place.And the influence ground of thickness that the laser that penetrates from light reflection side end face 2b is not constituted each layer of the second rotten ground floor 61a～4th layer 61d that prevents layer 61 sees through and arrives the second reflectivity key-course 63.Thus, can easily suppress to set for the reflectivity controlled function of the second reflectivity key-course 63 by the situation of second metamorphic layer, 61 influences with desirable reflectivity.
In addition, form by nitride or oxide, so going bad of each layer of ground floor 61a～4th layer 61d is difficult for further expansion towards periphery owing to constitute second rotten each layer of the ground floor 61a～4th layer 61d of layer 61 that prevent.Especially, in the ground floor 61a that constitutes by nitride and the 3rd layer of 61c, the phenomenon that oxygen breaks away from can not take place yet from layer.
Further, by utilizing the dielectric layer that forms by nitride (AlN) to constitute the second rotten ground floor 61a that joins with light reflection side end face 2b that prevent layer 61, can suppress to be included in outside atmosphere, the oxygen in the second end face coverlay 6 spreads to semiconductor element layer 2.Therefore thus, the light reflection side end face 2b of semiconductor element layer 2 becomes and is difficult for oxidation, is difficult for becoming reason non-luminous again in conjunction with energy level of the absorption of laser and heating at light reflection side end face 2b.Consequently, can suppress the generation of the COD of light reflection side end face 2b.
In addition, in the 1st execution mode, second rotten the preventing in the layer 61, as the dielectric layer that forms by nitride (AlN), except that ground floor 61a, therefore the 3rd layer of 61c also comprises, and can further suppress to be included in the diffusion to semiconductor element layer 2 of outside atmosphere, the oxygen in the second end face coverlay 6.In addition, because the second layer 61b that is made of oxide is formed between the ground floor 61a that is made of nitride and the 3rd layer of 61c, so oxygen is difficult to spread from second layer 61b, thereby can suppress the rotten of second layer 61b, and also can suppress the oxidation of rotten and light reflection side end face 2b of other dielectric layer.
In addition, in the 1st execution mode, because be formed with by oxide (SiO between the layer 61 and second reflectivity key-course 63 second rotten the preventing 2) boundary layer 62 that constitutes, so the amount that the distance between the second reflectivity key-course 63 and the light reflection side end face 2b can be separated the thickness of boundary layer 62.Thus, can reduce the thermal energy and the light energy that act on the second reflectivity key-course 63, the low-index layer 63a and the high refractive index layer 63b that therefore constitute the second reflectivity key-course 63 become not perishable.Thus, boundary layer 62 can suppress the influence to the reflective character of the second end face coverlay 6.In addition, put on the second rotten stress that prevents between the layer 61 and second reflectivity key-course 63, rottenly prevent peeling off of the layer 61 and second reflectivity key-course 63 so can suppress second because can relax by boundary layer 62.In addition, because utilize by SiO 2The boundary layer 62 that constitutes improves the second rotten close property that prevents the layer 61 and second reflectivity key-course 63, can suppress optic, hot deterioration simultaneously, so can further improve the reliability of the operating characteristics of nitride-based semiconductor laser device 100.
In addition, in the 1st enforcement side, contain the Si element identical, can improve the close property between boundary layer 62 and the low-index layer 63a thus with low-index layer 63a with the boundary layer 62 that the second reflectivity key-course 63 (low-index layer 63a) joins.
In addition, in the 1st enforcement side, the thickness (about 140nm) of boundary layer 62 is constituted than the thickness (about 10nm) of each layer that constitutes the second rotten ground floor 61a～4th layer 61d that prevents layer 61 greatly, can make the distance of the second reflectivity key-course 63 and light reflection side end face 2b thus easily.
In addition, in the 1st enforcement side, because high refractive index layer 63b uses the ZrO that becomes many crystallizations easily 2So it is higher that thermal diffusivity becomes, and more stable with respect to light energy and thermal energy, and membranous being difficult for of high refractive index layer 63b changes.
In addition, in the 1st enforcement side, because the high refractive index layer 63b of the formation second reflectivity key-course 63 and the blooming of low-index layer 63a are respectively λ/4, so can make the reflectivity maximization of the second reflectivity key-course 63.
At this, to this nitride-based semiconductor laser device 100, under the condition of the pulsed light of 450mW output (pulse duration 30nm, duty ratio 50%, 80 ℃), carried out life test, the result can suppress the rising of operating current, and can realize the mean free error time (MTTF) more than 3000 hours.Above result is, can confirm, in the nitride-based semiconductor laser device 100 of present embodiment, even when carrying out high output action, also can suppress the second end face coverlay 6 from the peeling off and the variation of the characteristic reflectivity of the second end face coverlay 6 of light reflection side end face 2b, can improve the stability and the reliability of operating characteristics.
(the 2nd execution mode)
In the nitride-based semiconductor laser device 200 of the 2nd execution mode of the present invention, with reference to Fig. 1, second rotten prevent in the layer 61 second layer 61b by the AlOxNy with about 30nm thickness (wherein, x＜y) formation, the 3rd layer of 61c that is made of AlN has the thickness of about 30nm.
In addition, carry out forming of the second layer 61b that constitutes by AlOxNy in the following manner, at Ar, O 2And N 2Gas atmosphere in produce ecr plasma by applying microwave power, simultaneously the Zr target is applied RF power and the Zr target is carried out sputter.
The structure of nitride-based semiconductor laser device 200 in addition is identical with manufacturing process with nitride-based semiconductor laser device 100 structures with manufacturing process.
As mentioned above, in the 2nd execution mode, second rotten nitrogen oxide (AlOxNy) formation that prevents the second layer 61b in the layer 61 by film concentration ratio oxide, nitrogenize object height.Thus, the bonding state of element is also more firm, and is not perishable, and, can further suppress to be contained in the outside atmosphere and the diffusion of the oxygen in the second end face coverlay 6.
In addition, in the 2nd execution mode, because the ratio of components of the nitrogen of the AlOxNy of second layer 61b (y) is greater than the ratio of components (x) of oxygen, so can suppress to be contained in the amount of the oxygen of second layer 61b to ground floor 61a, the 3rd layer of 61c diffusion.
In addition, the effect of other of the 2nd execution mode is identical with above-mentioned the 1st execution mode.In addition, this nitride-based semiconductor laser device 200 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm, and can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 3rd execution mode)
With reference to Fig. 1 and Fig. 3, the 3rd execution mode is described.Wherein, Fig. 3 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device 300 of 3 execution modes of the present invention, represents the cross section parallel with the ejaculation direction of laser.In addition, to the identical structure of Fig. 1 (the 1st execution mode), in Fig. 3, also mark identical symbol.
In the nitride-based semiconductor laser device 300 of the 3rd execution mode of the present invention, in the second rotten structure that prevents layer 61, do not form the 3rd layer of 61c, but on second layer 61b, directly be formed with the 4th layer of 61d.The structure and the manufacturing process of nitride-based semiconductor laser device 300 in addition are identical with nitride-based semiconductor laser device 200.
In the 3rd execution mode, as mentioned above, because the second rotten layer 61 of preventing is made of for these three layers ground floor 61a, second layer 61b and the 4th layer of 61d, so, can easily form with comparing in the nitride-based semiconductor laser device 200 (with reference to Fig. 1) by four layers of second rotten layer 61 that prevents that constitutes.
In addition, the effect of other of the 3rd execution mode is identical with above-mentioned second execution mode.In addition, this nitride-based semiconductor laser device 300 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm: can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 4th execution mode)
In the nitride-based semiconductor laser device 400 of the 4th execution mode of the present invention, with reference to Fig. 1, the high refractive index layer 63b in the second reflectivity key-course 63 is by (wherein, the x＜y) formation of the AlOxNy with about 53nm thickness.
In addition, the formation condition of the second layer 61b that is made of AlOxNy equally of the formation condition of the high refractive index layer 63b that is made of AlOxNy and above-mentioned the 2nd execution mode is identical.The structure of nitride-based semiconductor laser device 400 in addition and manufacturing process are identical with the structure and the manufacturing process of nitride-based semiconductor laser device 100.
In the 4th execution mode, as mentioned above, high refractive index layer 63b constitutes by compare the higher nitrogen oxide of film density with the dielectric layer that is made of oxide, nitride.Thus, the bonding state of element is also more firm, and is not perishable, and, can further suppress to be contained in the outside atmosphere and the diffusion of the oxygen in the second end face coverlay 6.
In addition, the effect of other of the 4th execution mode is identical with above-mentioned the 1st execution mode.In addition, this nitride-based semiconductor laser device 400 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm, and can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 5th execution mode)
In the nitride-based semiconductor laser device 500 of the 5th execution mode of the present invention, with reference to Fig. 1, the high refractive index layer 63b in the second reflectivity key-course 63 is formed by the AlN with about 47nm thickness.In addition, the formation condition of the ground floor 61a that is made of AlN equally of the formation condition of the high refractive index layer 63b that is made of AlN and the 1st execution mode is identical.The structure of nitride-based semiconductor laser device 500 in addition and manufacturing process are identical with the structure and the manufacturing process of nitride-based semiconductor laser device 100.
In the 5th execution mode, as mentioned above, high refractive index layer 63b is made of the nitrogen oxide of film density than oxidation object height.Thus, it is more firm that the bonding state of element also becomes, therefore not perishable, and, can further suppress to be contained in the outside atmosphere and the diffusion of the oxygen in the second end face coverlay 6.
And the effect of other of the 5th execution mode is identical with above-mentioned the 1st execution mode.In addition, this nitride-based semiconductor laser device 500 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm: can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 6th execution mode)
With reference to Fig. 4, the 6th execution mode is described.Wherein, Fig. 4 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device 600 of 6 execution modes of the present invention, represents the cross section parallel with the ejaculation direction of laser.In addition, to the identical structure of Fig. 1 (the 1st execution mode), in Fig. 4, also mark identical symbol.
In the nitride-based semiconductor laser device 600 of the 6th execution mode of the present invention, second rotten prevent layer 61 by ground floor 61a, have about 30nm thickness by Al 2O 3Second layer 61b and the 3rd layer of this three layers of formations of 61c of constituting.And, be formed with the boundary layer 65 that is laminated with multilayer (two-layer) oxide-film second rotten the preventing between the layer 61 and second reflectivity key-course 63.That is, boundary layer 65 begins to stack gradually from reflection layer end face 2b side on the second rotten surface that prevents layer 61 (the 3rd layer of 61c that is made of AlN): have about 60nm thickness by Al 2O 3The first boundary layer 65a that constitutes and have about 140nm thickness by SiO 2The second contact surface layer 65b that constitutes.In addition, the second reflectivity key-course 63 by SiO 2Low-index layer 63a that constitutes and second contact surface layer 65b with light reflection side end face 2b be that the surface of opposition side joins.In addition, the blooming of each layer of the first boundary layer 65a and second contact surface layer 65b is set at λ/more than 4.Wherein, the first boundary layer 65a is an example of " with the rotten layer that prevents that layer from joining " of the present invention, and second contact surface layer 65b is an example of " layer that joins with the reflectivity key-course " of the present invention.
In addition, the structure of other of nitride-based semiconductor laser device 600 is identical with the structure of nitride-based semiconductor laser device 100.In addition, the manufacturing process of nitride-based semiconductor laser device 600 is removed and is utilized the ECR sputtering method to stack gradually by Al on the layer 61 second rotten the preventing 2O 3The first boundary layer 65a that constitutes and by SiO 2The second contact surface layer 65b that constitutes and forming outside boundary layer 65 these points is identical with the manufacturing process of nitride-based semiconductor laser device 100.
In the 6th execution mode, as mentioned above, be formed with boundary layer 65 second rotten the preventing between the layer 61 and second reflectivity key-course 63, therefore, with the amount of the second reflectivity key-course 63 and light reflection side end face 2b the thermal energy and the light energy that act on the second reflectivity key-course 63 are reduced apart from increasing, therefore, can make that the low-index layer 63a and the high refractive index layer 63b that constitute the second reflectivity key-course 63 are not perishable.
In addition, in the 6th execution mode, because boundary layer 65 is made of the first boundary layer 65a and second contact surface layer 65b, wherein, the first boundary layer 65a is by Al 2O 3Constitute, second contact surface layer 65b is by SiO 2Constitute, all can fully relax and be applied to the second rotten stress that prevents between the layer 61 and second reflectivity key-course 63.Thus, can suppress second rotten the layer 61 and second reflectivity key-course 63 that prevent and cause the situation that film comes off mutually.
In addition, in the 6th execution mode, second rotten the 3rd layer of 61c that is made of AlN and the first boundary layer 65a of layer 61 of preventing joins, and the second contact surface layer 65b and the second reflectivity key-course 63 by SiO 2The low-index layer 63a that constitutes joins, and thus, the 3rd layer of 61c utilizes identical Al element with the first boundary layer 65a and close property is good, and second contact surface layer 65b and low-index layer 63a are by having the SiO of identical Si element 2Therefore film and improve close property, can suppress second rotten the layer 61 and second reflectivity key-course 63 that prevent reliably by boundary layer 65 and cause the situation that film comes off mutually.
In addition, the effect of other of the 6th execution mode is identical with above-mentioned the 1st execution mode.In addition, this nitride-based semiconductor laser device 600 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm: can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 7th execution mode)
With reference to Fig. 5, the 7th execution mode is described.Wherein, Fig. 5 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device 700 of the 7th execution mode of the present invention, represents the cross section parallel with the ejaculation direction of laser.In addition, to the identical structure of Fig. 4 (the 6th execution mode), the identical symbol of mark in Fig. 5.
In the nitride-based semiconductor laser device 700 of the 7th execution mode of the present invention, the second reflection key-course 66 have with have about 63nm thickness by SiOxNy (wherein, the low-index layer 66a that constitutes of x＜y) with have about 50nm thickness by ZrO 2The high refractive index layer 63b that constitutes is each stacked seven layers of structure that forms alternately.In addition, low-index layer 66a and high refractive index layer 63b blooming separately are set at λ/4.Thus, the reflectivity of the second end face coverlay 6 is set at about 94%.Wherein, the second reflectivity key-course 66 is an example of " reflectivity key-course " of the present invention.
In addition, the structure of other of nitride-based semiconductor laser device 700 and manufacturing process are identical with the structure of nitride-based semiconductor laser device 600.
In the 7th execution mode, as mentioned above, because the low-index layer 66a of the second reflectivity key-course 66 utilizes film density to constitute than the dielectric layer (SiOxNy) that is formed by nitrogen oxide of the dielectric floor height that is made of oxide, so can suppress the deterioration of low-index layer 66a self, be ZrO but also can suppress to reach from the oxide-film that constitutes high refractive index layer 63b from the oxygen that the atmosphere of outside is taken into 2Oxygen from the diffusion of light reflection side end face 2b to semiconductor element layer 2.
In addition, the effect of other of the 7th execution mode is identical with above-mentioned the 6th execution mode.In addition, this nitride-based semiconductor laser device 700 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm: can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 8th execution mode)
With reference to Fig. 6, the 8th execution mode is described.Wherein, Fig. 6 is the sectional view of structure that is used to illustrate the nitride-based semiconductor laser device 800 of 8 execution modes of the present invention, represents the cross section parallel with the ejaculation direction of laser.In addition, to the identical structure of Fig. 4 (the 6th execution mode), the identical symbol of mark in Fig. 6.
In the nitride-based semiconductor laser device 800 of the 8th execution mode of the present invention, be formed with the boundary layer 67 that lamination has nitrogen oxidation film and oxide-film between the layer 61 and second reflectivity key-course 63 second rotten the preventing.That is, boundary layer 67 is on the second rotten surface that prevents layer 61, from light reflection side end face 2b side begin to stack gradually have about 53nm thickness by AlOxNy (wherein, the first boundary layer 67a of the formation of x＜y) and have about 140nm thickness by SiO 2The second contact surface layer 65b that constitutes.In addition, the blooming of the first boundary layer 67a is set at λ/more than 4.
In addition, other structure and manufacturing process of nitride-based semiconductor laser device 800 is identical with the structure of nitride-based semiconductor laser device 600.
In the 8th execution mode, as mentioned above, because the first boundary layer 67a of boundary layer 67 utilizes film density to constitute than the dielectric layer (AlOxNy) that is made of nitrogen oxide of the dielectric floor height that is made of oxide, so not only can suppress the deterioration of low-index layer 66a self, and the oxide-film that can suppress to reach from formation second contact surface layer 65b from the oxygen that the atmosphere of outside is taken into is SiO 2Oxygen from the diffusion of light reflection side end face 2b to semiconductor element layer 2.
In addition, the effect of other of the 8th execution mode is identical with above-mentioned the 6th execution mode.In addition, this nitride-based semiconductor laser device 800 has been carried out life test under the condition identical with above-mentioned the 1st execution mode, the result can confirm: can suppress the rising of operating current, and can access the MTTF more than 3000 hours.
(the 9th execution mode)
With reference to Fig. 2 and Fig. 7～Fig. 9, the optical take-up apparatus 900 of the laser aid 950 that possesses the 9th execution mode of the present invention is described.
The laser aid 950 of the 9th execution mode of the present invention is made of conductive material, and comprises: roughly round shell package main body 953, power supply pin 951a, 951b, 951c and 952 and lid 954.In addition, on shell package main body 953, be provided with the nitride-based semiconductor laser device 100 of above-mentioned the 1st execution mode, utilize lid 954 sealings.On lid 954, be provided with the conveying end 954a that forms by the material that sees through laser.In addition, power supply pin 952 also is electrically connected with shell package main body 953 mechanical connections.Power supply pin 952 uses as earth terminal.The power supply pin 951a that extends to the outside of shell package main body 953,951b, 951c, an end of 952 are connected with not shown drive circuit respectively.
With the support unit 955 of the shell package main body 953 integrated conductivity that form on be provided with pedestal (submount) 955a of conductivity.Support unit 955 and pedestal 955a are made of conductivity and thermal conductivity excellent material, nitride-based semiconductor laser device 100 be engaged into: the ejaculation direction X of laser is towards the outside of laser aid 950 (conveying end 954a one side), and the luminous point of nitride-based semiconductor laser device 100 (waveguide of the below that is formed at the 2c of spine shown in Figure 2) is positioned at the center line of laser aid 950.
Power supply pin 951a, 951b and 951c are respectively by dead ring 951z and shell package main body 953 electric insulations.Power supply pin 951a is connected through the upper surface of metal wire 971 with the 32a of wire-bonded portion of the p side pad electrode 32 (p lateral electrode 3) of nitride-based semiconductor laser device 100.In addition, power supply pin 951c is connected through the upper surface of metal wire 972 with pedestal 955a.
In addition, as shown in Figure 9, optical take-up apparatus 900 possesses: laser aid 950, optical system 960 and optical detection part 970 that nitride-based semiconductor laser device 100 is installed, wherein, this optical system 960 has: polarisation separator (polarisation BS) 961, collimating lens 962, optical beam expander 963, λ/4 plates 964, object lens 965 and cylindrical lens 966.
In optical system 960, polarisation BS 961 makes the laser full impregnated mistake that penetrates from nitride-based semiconductor laser device 100, and the laser that returns from CD 980 of total reflection.Collimating lens 962 will become directional light through the laser beam transformation from nitride-based semiconductor laser device 100 behind the polarisation BS 961.Optical beam expander 963 is made of concavees lens, convex lens and adjuster (actuator) (not shown).Adjuster is according to the variable in distance that makes concavees lens and convex lens from the servosignal of not shown servo circuit.Thus, proofread and correct from the corrugated state of the laser of nitride-based semiconductor laser device 100 ejaculations.
λ/4 plates 964 will become rotatory polarization by the laser beam transformation that collimating lens 962 is transformed into the linear polarization behind the almost parallel light.In addition, the laser beam transformation of λ/4 plates 964 rotatory polarization that will return from CD 980 polarisation that is in line.The direction quadrature of the polarization direction of linear polarization in the case and the linear polarization of the laser that penetrates from nitride-based semiconductor laser device 100.Thus, the laser that returns from CD 980 passes through polarisation BS 961 by roughly total reflections.Object lens 965 make through the laser behind λ/4 plates 964 and concentrate on the surface (recording layer) of CD 980.In addition, object lens 965 utilize not shown objective lens actuator according to the servosignal (following the tracks of (tracking) servosignal, focus servo signal and oblique servo signal) from servo circuit, can move on focus direction, tracking direction and incline direction.
With along being disposed cylindrical lens 966 and optical detection part 970 by the mode of the optical axis of the laser of polarisation BS 961 total reflections.966 pairs of laser of injecting of cylindrical lens apply astigmatism (astigmatism) effect.Optical detection part 970 is based on the intensity distributions output reproducing signal of the laser that receives.At this, optical detection part 970 has the surveyed area of the figure of regulation, to obtain reproducing signal and focus error signal, tracking error signal and tilt error signal.Utilize the adjuster and the objective lens actuator of focus error signal, tracking error signal and tilt error signal FEEDBACK CONTROL optical beam expander 963.Like this, constitute the optical take-up apparatus 900 of the 9th execution mode of the present invention.
In the 9th execution mode, as mentioned above, because optical take-up apparatus 900 uses the nitride-based semiconductor laser device 100 of above-mentioned the 1st execution mode, so when carrying out high output action, the second end face coverlay 6 be can suppress from the peeling off and the variation of the characteristic reflectivity of the second end face coverlay 6 of light reflection side end face 2b, the stability of operating characteristics of nitride-based semiconductor laser device 100 and the optical take-up apparatus 900 that reliability is improved therefore can be obtained.
In addition, should think that this disclosed execution mode all is illustrations in all respects, be not restriction.Scope of the present invention also be can't help the explanation performance of above-mentioned execution mode, but is represented by the scope of summary of the invention, and scope of the present invention also comprises the meaning that the scope with summary of the invention is equal to and all changes in the scope.
For example, in above-mentioned the 1st～the 8th execution mode, second rotten each layer of the ground floor 61a～4th layer 61d in the layer 61 that prevent constitutes by oxide, nitride or the nitrogen oxide of identical element (Al), but the present invention is not limited to this, also can constitute each layer by oxide, nitride or the nitrogen oxide of different elements.In addition, also can utilize the structure that does not comprise the layer that constitutes by oxide, the i.e. layer that a utilization is formed by nitride or nitrogen oxide to constitute the second rotten layer 61 that prevents.
In addition, in above-mentioned the 1st～the 9th execution mode, the second rotten layer 61 that prevents constitutes by three layers or four layers, though utilize the stacked film of the layer that is formed by oxide, nitride or nitrogen oxide to constitute, but the present invention is not limited to this, also can adopt stacked films two-layer or more than five layers.
In addition, in the above-mentioned the the 1st～the 6th, the 8th and the 9th execution mode, the second reflectivity key-course 63 has each stacked six layers of structure that forms alternately with low-index layer 63a and high refractive index layer 63b, but the present invention is not limited to this, the stacked numbers beyond also can adopting six layers.
In addition, in above-mentioned the 1st～the 9th execution mode, the dielectric substance as each layer that constitutes the second end face coverlay 6 has utilized AlN as nitride, has utilized Al as oxide 2O 3, SiO 2Or ZrO 2, utilized AlOxNy and SiOxNy as nitrogen oxide, but the present invention is not limited to this, also can utilize nitride, oxide or the nitrogen oxide of additional metals element.For example, as each dielectric substance, nitride can utilize the nitride of Si etc., and in addition, oxide, nitrogen oxide can utilize oxide, the nitrogen oxide of Zr, Ta, Hf and Nb etc.
In addition, in above-mentioned the 1st～the 5th execution mode, utilize by SiO 2The oxide-film that constitutes has formed boundary layer 62, but the present invention and lose and be limited to this also can utilize the oxide-film that contains Zr, Ta and Nb etc.
In addition, in above-mentioned the 8th execution mode, the first boundary layer 67a that constitutes boundary layer 67 has utilized AlOxNy, but the present invention is not limited to this, also can utilize the nitrogen oxidation film that contains Si, Zr, Ta, Hf and Nb etc. to constitute the first interfacial film 67a.
In addition, in above-mentioned the 1st～the 9th execution mode, formed, but the present invention is not limited to this, also can utilize the dielectric layer more than three layers to form boundary layer by one deck or the two-layer boundary layer that constitutes.For example, under the situation of utilizing three layers of formation boundary layer,, undertaken stacked and the formation boundary layer by the order of oxide-film, nitrogen oxidation film and oxide-film preferably from the rotten layer orientating reflex rate key-course that prevent.
In addition, in above-mentioned the 1st～the 9th execution mode, utilize ECR splash method to form each layer of the first end face coverlay 5 and the second end face coverlay 6, but the present invention is not limited to this, also can utilize other film build method to form.

Claims (20)

1. a nitride-based semiconductor laser device is characterized in that, comprising:
The nitride-based semiconductor device layer, it has light emitting side end face and light reflection side end face; And
The end face coverlay, it comprises that being formed on rotten on the described smooth reflection side end face prevents layer and be formed on the described rotten reflectivity key-course that prevents on the layer,
Described reflectivity key-course is made of the alternately high refractive index layer and the low-index layer of lamination,
The described rotten layer laminate that prevents has two-layer above layer, and each layer be made of the dielectric layer that utilizes nitride, oxide or nitrogen oxide to form respectively,
The described rotten layer that prevents has the ground floor that the dielectric layer by utilizing nitride to form that joins with described smooth reflection side end face constitutes,
Constitute the thickness of the thickness of described rotten each layer that prevents layer less than described high refractive index layer, and less than the thickness of described low-index layer.
2. nitride-based semiconductor laser device as claimed in claim 1 is characterized in that:
The described rotten layer that prevents also has the second layer that the dielectric layer by utilizing oxide or nitrogen oxide to form that joins with a side opposite with described smooth reflection side end face of described ground floor constitutes.
3. nitride-based semiconductor laser device as claimed in claim 2 is characterized in that:
Described rotten prevent layer also have form independently with described ground floor and and the 3rd layer of constituting of the dielectric layer that joins of the side opposite of the described second layer by utilizing nitride to form with described ground floor.
4. nitride-based semiconductor laser device as claimed in claim 1 is characterized in that:
Described ground floor is AlN.
5. nitride-based semiconductor laser device as claimed in claim 3 is characterized in that:
The described second layer is Al 2O 3Or AlON.
6. nitride-based semiconductor laser device as claimed in claim 3 is characterized in that:
Described the 3rd layer is AlN.
7. nitride-based semiconductor laser device as claimed in claim 3 is characterized in that:
The described rotten layer that prevents also has the 4th layer that the dielectric layer by utilizing oxide to form that joins with described the 3rd a layer side opposite with the described second layer constitutes.
8. nitride-based semiconductor laser device as claimed in claim 1 is characterized in that:
Described end face coverlay also comprises and is formed at the described rotten boundary layer between layer and the described reflectivity key-course, that formed by oxide or nitrogen oxide that prevents.
9. nitride-based semiconductor laser device as claimed in claim 8 is characterized in that:
Described boundary layer constitutes by the layer that joins with described reflectivity key-course with the described rotten layer that prevents that layer from joining.
10. nitride-based semiconductor laser device as claimed in claim 9 is characterized in that:
The layer of the described boundary layer of formation that joins with described reflectivity key-course contains and the identical element of described reflectivity key-course.
11. nitride-based semiconductor laser device as claimed in claim 10 is characterized in that:
The layer of the described boundary layer of formation that joins with described reflectivity key-course is by SiO 2Constitute.
12. nitride-based semiconductor laser device as claimed in claim 9 is characterized in that:
Contain and the described rotten metallic element that prevents that layer is identical with the described rotten layer of the described boundary layer of formation that layer joins that prevents.
13. nitride-based semiconductor laser device as claimed in claim 12 is characterized in that:
With the described rotten layer of the described boundary layer of formation that layer joins that prevents by Al 2O 3Form.
14. nitride-based semiconductor laser device as claimed in claim 8 is characterized in that:
Described nitride-based semiconductor device layer also has luminescent layer,
In the Wavelength of Laser that described luminescent layer sends is under the situation of λ, and the blooming that constitutes the layer of described boundary layer is set at λ/more than 4.
15. nitride-based semiconductor laser device as claimed in claim 8 is characterized in that:
The thickness of layer that constitutes described boundary layer is greater than constituting the described rotten thickness that prevents each layer of layer.
16. nitride-based semiconductor laser device as claimed in claim 1 is characterized in that:
Constitute described rotten each layer of layer that prevent and contain identical metallic element.
17. nitride-based semiconductor laser device as claimed in claim 5 is characterized in that:
The described second layer is made of AlON, and the ratio of components of the nitrogen in the second layer that is made of described AlON is greater than the ratio of components of oxygen.
18. nitride-based semiconductor laser device as claimed in claim 1 is characterized in that:
Described nitride-based semiconductor device layer also has luminescent layer,
In the Wavelength of Laser that described luminescent layer sends is under the situation of λ, constitutes the described rotten blooming that prevents each layer that is formed by described dielectric layer of layer and is set at λ/below 4 respectively.
19. nitride-based semiconductor laser device as claimed in claim 1 is characterized in that:
Described low-index layer is made of oxide or nitrogen oxide, and described high refractive index layer is made of nitride or nitrogen oxide.
20. an optical take-up apparatus is characterized in that, comprising:
Nitride-based semiconductor laser device, it comprises nitride-based semiconductor device layer and the end face coverlay with light emitting side end face and light reflection side end face, and this end face coverlay comprises that being formed at rotten on the described smooth reflection side end face prevents layer and be formed at the described rotten reflectivity key-course that prevents on the layer;
Optical system, it controls the ejaculation light of described nitride-based semiconductor laser device; With
Optical detection part, it detects described ejaculation light, wherein
Described reflectivity key-course is made of the alternately high refractive index layer and the low-index layer of lamination,
The described rotten layer laminate that prevents has two-layer above layer, and each layer is made of the dielectric layer that utilizes nitride, oxide or nitrogen oxide to form respectively,
The described rotten layer that prevents has the ground floor that the dielectric layer by utilizing nitride to form that joins with described smooth reflection side end face constitutes,
Constitute the thickness of the thickness of described rotten each layer that prevents layer less than described high refractive index layer, and less than the thickness of described low-index layer.
CN200910222885A 2008-11-21 2009-11-20 Nitride-based semiconductor laser device and optical pickup Pending CN101741013A (en)

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Application publication date: 20100616