CN101740402A - Gold removing process of pressure welding area of high-power semiconductor device pipe seat - Google Patents
Gold removing process of pressure welding area of high-power semiconductor device pipe seat Download PDFInfo
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- CN101740402A CN101740402A CN200910248640A CN200910248640A CN101740402A CN 101740402 A CN101740402 A CN 101740402A CN 200910248640 A CN200910248640 A CN 200910248640A CN 200910248640 A CN200910248640 A CN 200910248640A CN 101740402 A CN101740402 A CN 101740402A
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- pressure welding
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- pipe seat
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Abstract
The invention relates to a gold removing process of a pressure welding area of a high-power semiconductor device pipe seat, which can solve the problem of gold-aluminum systems and eliminate reliability hidden dangers. The process comprises the following steps of: regioselectively gluing a pipe seat to be treated and ensuring that photoresist is not pasted to a pipe seat pressure welding area; placing the glued pipe seat in a thermostatic oven and roasting the pipe seat for 10-15 minutes, wherein the temperature of the oven is 70-100 DEG C; preparing a gold corrosive liquid, wherein the gold corrosive liquid is prepared from iodine, potassium iodide and high-purity water according to a ratio of (1:1:2)-(1:1:4) in parts by weight; removing a gold layer of the pressure welding area by using the prepared gold corrosive liquid; and then removing glue, washing, dewatering and drying.
Description
Technical field
The present invention relates to a kind of gold removing process of pressure welding area of high-power semiconductor device pipe seat.
Background technology
Along with development of science and technology, the high power device that domestic every profession and trade needs is more and more.And in its production process, in use have good solderability in order to guarantee product, must adopt gold-plated pipe leg.Because existing high power device base production technology pressure welding area and pipe leg are isolated, thereby pressure welding area is simultaneously by gold-plated.And the conductive strips of semiconductor chip are aluminium lamination, and no matter adopting spun gold still is the aluminium wire bonding, all has gold-aluminium system, has reliability hidden danger, and many high highly sophisticated products forbid to adopt golden aluminium system.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of gold-aluminium system liver that do not exist, and can remove reliability hidden danger, with the pressure welding area gold layer gold removing process of pressure welding area of high-power semiconductor device pipe seat of removing of base.
Technical solution of the present invention is:
Gold removing process of pressure welding area of high-power semiconductor device pipe seat, its special character is: desire is handled base carry out the regioselectivity gluing, do not make photoresist adhere to the base pressure welding area; The base that has been coated with glue is put in the baking oven of constant temperature and toasted 10～50 minutes, described oven temperature is 70～100 ℃; Prepare golden corrosive liquid, described golden corrosive liquid was made up of according to ratio of weight and number iodine, KI and high purity water in 1: 1: 2～1: 1: 4; With the golden corrosive liquid for preparing the gold layer of pressure welding area is removed; Through removing photoresist, wash, dewater and drying, get final product again.
Above-mentioned gold removing process of pressure welding area of high-power semiconductor device pipe seat, described regioselectivity gluing is meant at the base surface coating except that pressure welding area.
Above-mentioned gold removing process of pressure welding area of high-power semiconductor device pipe seat after the base after the corrosion dried up with nitrogen, is put into microscopically inspection, if corrosion is clean, can corrode again.
Advantage of the present invention is: carry out the regioselectivity gluing because desire is handled base, can solve the gold-aluminium system problem of high power device, remove reliability hidden danger.
Description of drawings
Fig. 1 is the structural representation of base (is example with F type base).
Among the figure: 1-pressure welding area, 2-pin, 3-nickel plating housing
Embodiment
1. gluing
As shown in Figure 1, desire is handled base carries out the regioselectivity resist coating, promptly on nickel plating housing 3 surfaces except that pressure welding area 1 position and pin two surface be coated with positive photoresist, attention does not simultaneously make photoresist adhere on the base pressure welding area 1.
2. baking
The base that has been coated with glue was put in the baking oven of constant temperature baking 10 minutes, oven temperature is 100 ℃.
3. prepare golden corrosive liquid
Get iodine, KI and high purity water according to 1: 1: 2 mixed preparing gold of ratio of weight and number corrosive liquid.
4. corrosion
The base that baking is good takes out from baking oven, is put into and corrodes in the golden corrosive liquid, after 2～8 minutes, base is taken out, and washes with high purity water.
5. reprocessing
5.1 check
After base after the corrosion dried up with nitrogen, be put into microscopically inspection,, can corrode again if corrosion is clean.
5.2 remove photoresist
The base that corrosion is good is put in the liquid that removes photoresist (acetone) and soaks, and finishes the technology of removing photoresist.
5.3 flushing
Base is rinsed well with high purity water.
5.4 dehydration
Base is dewatered.
5.5 oven dry
Base is dried with infrared lamp.
Embodiment 2
1. gluing
As shown in Figure 1, desire is handled base carries out the regioselectivity resist coating, promptly on nickel plating housing 3 surfaces except that pressure welding area 1 position and pin two surface be coated with positive photoresist, attention does not simultaneously make photoresist adhere on the base pressure welding area 1.
2. baking
The base that has been coated with glue was put in the baking oven of constant temperature baking 50 minutes, oven temperature is 70 ℃.
3. prepare golden corrosive liquid
Get iodine, KI and high purity water according to 1: 1: 4 mixed preparing gold of ratio of weight and number corrosive liquid.
4. corrosion
The base that baking is good takes out from baking oven, is put into and corrodes in the golden corrosive liquid, after 2～8 minutes, base is taken out, and washes with high purity water.
5. reprocessing
5.1 check
After base after the corrosion dried up with nitrogen, be put into microscopically inspection,, can corrode again if corrosion is clean.
5.2 remove photoresist
The base that corrosion is good is put in the liquid that removes photoresist (acetone) and soaks, and finishes the technology of removing photoresist.
5.3 flushing
Base is rinsed well with high purity water.
5.4 dehydration
Base is dewatered.
5.5 oven dry
Base is dried with infrared lamp.
1. gluing
As shown in Figure 1, desire is handled base carries out the regioselectivity resist coating, promptly on nickel plating housing 3 surfaces except that pressure welding area 1 position and pin two surface be coated with positive photoresist, attention does not simultaneously make photoresist adhere on the base pressure welding area 1.
2. baking
The base that has been coated with glue was put in the baking oven of constant temperature baking 30 minutes, oven temperature is 80 ℃.
3. prepare golden corrosive liquid
Get iodine, KI and high purity water according to 1: 1: 3 mixed preparing gold of ratio of weight and number corrosive liquid.
4. corrosion
The base that baking is good takes out from baking oven, is put into and corrodes in the golden corrosive liquid, after 2～8 minutes, base is taken out, and washes with a large amount of high purity waters.
5. reprocessing
5.1 check
After base after the corrosion dried up with nitrogen, be put into microscopically inspection,, can corrode again if corrosion is clean.
5.2 remove photoresist
The base that corrosion is good is put in the liquid that removes photoresist (acetone) and soaks, and finishes the technology of removing photoresist.
5.3 flushing
Base is rinsed well with high purity water.
5.4 dehydration
Base is dewatered.
5.5 oven dry
Base is dried with infrared lamp.
Embodiment 4
Claims (3)
1. a gold removing process of pressure welding area of high-power semiconductor device pipe seat is characterized in that: desire is handled base carry out the regioselectivity gluing, do not make photoresist adhere to the base pressure welding area; The base that has been coated with glue is put in the baking oven of constant temperature and toasted 10～50 minutes, described oven temperature is 70～100 ℃; Prepare golden corrosive liquid, described golden corrosive liquid was made up of according to ratio of weight and number iodine, KI and high purity water in 1: 1: 2～1: 1: 4; With the golden corrosive liquid for preparing the gold layer of pressure welding area is removed; Through removing photoresist, wash, dewater and drying, get final product again.
2. gold removing process of pressure welding area of high-power semiconductor device pipe seat according to claim 1 is characterized in that: described regioselectivity gluing is meant at the base surface coating except that pressure welding area.
3. gold removing process of pressure welding area of high-power semiconductor device pipe seat according to claim 1 is characterized in that: the base after will corroding is put into microscopically inspection after drying up with nitrogen, if corrosion is unclean, can corrode again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102486403A CN101740402B (en) | 2009-12-20 | 2009-12-20 | Gold removing process of pressure welding area of high-power semiconductor device pipe seat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102486403A CN101740402B (en) | 2009-12-20 | 2009-12-20 | Gold removing process of pressure welding area of high-power semiconductor device pipe seat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101740402A true CN101740402A (en) | 2010-06-16 |
| CN101740402B CN101740402B (en) | 2011-12-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102486403A Expired - Fee Related CN101740402B (en) | 2009-12-20 | 2009-12-20 | Gold removing process of pressure welding area of high-power semiconductor device pipe seat |
Country Status (1)
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| CN (1) | CN101740402B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102143657A (en) * | 2011-01-20 | 2011-08-03 | 广州杰赛科技股份有限公司 | Method for processing wireless gold-plating printed plate |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN110581061A (en) * | 2019-09-25 | 2019-12-17 | 同辉电子科技股份有限公司 | Processing technology of gallium nitride MMIC power amplifier chip |
| CN113789520A (en) * | 2021-09-15 | 2021-12-14 | 励福(江门)环保科技股份有限公司 | Method for cleaning vacuum cavity part in chip coating process |
-
2009
- 2009-12-20 CN CN2009102486403A patent/CN101740402B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102143657A (en) * | 2011-01-20 | 2011-08-03 | 广州杰赛科技股份有限公司 | Method for processing wireless gold-plating printed plate |
| CN102143657B (en) * | 2011-01-20 | 2013-05-22 | 广州杰赛科技股份有限公司 | Method for processing wireless gold-plating printed plate |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN110581061A (en) * | 2019-09-25 | 2019-12-17 | 同辉电子科技股份有限公司 | Processing technology of gallium nitride MMIC power amplifier chip |
| CN110581061B (en) * | 2019-09-25 | 2022-03-01 | 同辉电子科技股份有限公司 | Processing technology of gallium nitride MMIC power amplifier chip |
| CN113789520A (en) * | 2021-09-15 | 2021-12-14 | 励福(江门)环保科技股份有限公司 | Method for cleaning vacuum cavity part in chip coating process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101740402B (en) | 2011-12-21 |
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Granted publication date: 20111221 Termination date: 20131220 |