CN101736374A - Method for manufacturing LED metal substrate with gallium nitride-based vertical structure - Google Patents
Method for manufacturing LED metal substrate with gallium nitride-based vertical structure Download PDFInfo
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- CN101736374A CN101736374A CN200810226571A CN200810226571A CN101736374A CN 101736374 A CN101736374 A CN 101736374A CN 200810226571 A CN200810226571 A CN 200810226571A CN 200810226571 A CN200810226571 A CN 200810226571A CN 101736374 A CN101736374 A CN 101736374A
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Abstract
The invention discloses a method for manufacturing an LED metal substrate with a gallium nitride-based vertical structure. The method adopts two or more metals for alternate plating to obtain the metal substrate consisting of a plurality of layers of metals, wherein at least one tensile stress metal is matched with one compressive stress metal. The method combines a common stress regulation method by current during plating and different stress properties of the metal material per se, applies a plurality of metals for matching and alternate plating, controls inner stress of the plating metal by regulating plating current and thickness of each metal layer, and fulfills the aim of matching the warpage of the plating metal substrate and the warpage of a GaN thin film. Compared with the prior art, the method improves the density of the plating metal, contributes to regulating the support degree of the substrate, strengthens the connecting intensity between the plating metal and the GaN thin film, and improves the aging characteristic of an LED device with a vertical structure.
Description
Technical field
The present invention relates to the manufacture craft of the vertical stratification LED device of metal substrate, be specifically related to the making method of GaN based vertical structure LED plated metal substrate.
Background technology
With GaN and InGaN, AlGaN is that main III/V nitride is the semiconductor material that receives much concern in recent years, the direct band gap of its 1.9-6.2eV continuous variable, excellent physics, chemical stability, high saturated electrons mobility or the like characteristic makes it become the most preferably material of laser apparatus, photodiode or the like opto-electronic device.
Yet because the restriction of the growing technology of GaN own, big area GaN material now is grown on the Sapphire Substrate mostly.Though Grown GaN is of high quality on the Sapphire Substrate, use also the widest, because sapphire non-conductive, cause the LED device of Sapphire Substrate can only be made into P, the N electrode side direction structure in same plane, such structure causes the interior current crowding phenomenon of device serious, and because the thermal conduction characteristic of sapphire difference has greatly limited the application of this structure LED, especially in the superpower field.
In recent years, along with the development of laser lift-off technique, people have invented gradually Sapphire Substrate have been removed, and then GaN is transferred to the method for making vertical stratification LED device on high heat conduction, the high metal that conducts electricity or the Si substrate.Wherein, the GaN film transfer there are two kinds of main means on metal or the Si substrate: bonding method or electric plating method.Bonding method is comparatively general now, but mostly bonded substrate is the Si substrate, and the thermal expansivity that differs bigger owing to metal and GaN makes the development of metal link stay cool always.Electro-plating method is as arriving high heat conduction with the GaN film transfer, and the main method on the high-conductive metal substrate has obtained more development.
Yet, electro-plating method still has a lot of bottleneck difficulties to overcome, wherein topmost one is exactly: because behind the laser lift-off, the GaN film will discharge itself owing to producing an angularity in the remaining thermal stresses of process of growth freely, and electroplated metal is because the character of metal itself also can produce an angularity, when both are not complementary, be easy to cause separating of electroplated metal substrate and GaN film, thereby cause the element manufacturing failure.So the stress situation of regulating plated metal just seems particularly important.The method of adjusting stress commonly used is to regulate plated metal stress situation by regulating methods such as electric current, electroplating solution concentration in the plating, yet regulate to be like this and will to get off to realize with the prerequisite of the key characteristics such as density of sacrificing plated metal, for vertical stratification LED device, self-supporting ability to support substrates, and metal quality etc. has relatively high expectations, so aforesaid method can not be directly as the electroplating technology in the vertical stratification LED element manufacturing.
Summary of the invention
The object of the present invention is to provide a kind of on GaN based vertical structure LED the method for plated metal substrate, reach control plated metal internal stress, realize the purpose that plated metal substrate warpage degree and GaN film angularity are complementary.
Discover, different metals, the internal stress of its intrinsic is different (comparing under identical plating condition), like this, just provides degree of freedom for regulating metal substrate stress situation.So current setting strain method commonly used during the present invention will electroplate combines with the different characteristics of the material stress characteristic of metal own, the application multiple layer metal replaces regulates stress, to reach the purpose of substrate and GaN membrane stress coupling.
Concrete, technical scheme of the present invention is as follows:
A kind of method of making GaN based vertical structure LED metal substrate adopts two or more metal to carry out alternatively plate, obtains the metal substrate that multiple layer metal is formed, and has the collocation of a kind of tension stress metal and a kind of stress metallographic phase in the described metal at least.
Described tension stress metal is Cu, Co, Pd etc. for example, and the stress metal is Ni, W etc. for example.Which adopts plant metal arranges in pairs or groups, strength of current during every kind of Metal plating, processing condition such as the thickness of every layer of metal are determined on a case-by-case basis, and the metal that can arrange in pairs or groups is Cu and Ni for example, electroplating current is 0.1A～20A for example, for example 1～100 micron of the thickness of every layer of metal.The present invention normally need electroplate the side of translate substrate in the specific implementation at the GaN device, carry out following steps:
(1) at first sample is put into the first Metal plating pond, used first current standard, electroplate first kind of metal, for example, use the current standard of 1A, at first plated metal Cu, extremely about 10 micron thickness to certain thickness;
(2) sample is put into the second Metal plating pond, used second current standard, electroplate second kind of metal to certain thickness, for example, use the 2A current standard, plated metal Ni is to about 20 micron thickness;
(3) sample is put back to the first Metal plating pond, perhaps put into the 3rd Metal plating pond, use the 3rd current standard, plating first or the third metal for example, are used the 3A current standard to certain thickness, and plated metal Cu or other metals are to about 30 micron thickness.
And so forth, until Metal plating to required substrate thickness.
From fundamental principle of the present invention, those skilled in the art should be according to specific requirement, selecting multiple suitable metal arranges in pairs or groups, alternatively plate, and by regulating galvanized electric current of each metal level and thickness, just can reach control plated metal internal stress, realize the purpose that plated metal substrate warpage degree and GaN film angularity are complementary.
Compared with prior art, beneficial effect of the present invention is: the first, improved the density of plated metal, and multiple metal alloy more helps to regulate vertical stratification LED device and substrate supports degree; Second: strengthened plated metal and GaN film strength of joint, improved the aging property of vertical stratification LED device.
Description of drawings
Fig. 1 utilizes method of the present invention to electroplate the GaN based vertical structure LED device photo of Cu/Ni metal substrate.
Embodiment
Below by embodiment the present invention is described in further detail.
Embodiment one
Through the following steps with a GaN sample transfer on the Cu/Ni metal substrate:
(1) prepares two kinds of standard plating baths that present technique field personnel know: copper plating bath and nickel-plating liquid;
(2) sample at first is dipped in the copper plating bath, uses the electric current of 1A, electroplated 1 hour, thickness of coating is 10 microns;
(3) nickel-plating liquid is put in the sample taking-up, used the electric current of 1A, electroplated 1 hour, thickness of coating is 10 microns;
(4) again copper plating bath is put in the sample taking-up, used the electric current of 2A, electroplated 2 hours, thickness of coating is 30 microns;
(5) nickel-plating liquid is put in the sample taking-up, used the electric current of 2A, electroplated 2 hours, thickness of coating is 30 microns;
(6) again copper plating bath is put in the sample taking-up, used the electric current of 4A, electroplated 2 hours, thickness of coating is 50 microns;
(7) again nickel-plating liquid is put in the sample taking-up, used the electric current of 4A, electroplated 2 hours, thickness of coating is 50 microns.
Take out sample, electroplate and finish, electroplate the result and can effectively improve stress, electrolytic coating is warpage no longer significantly, sees accompanying drawing 1, sample area 3cm among the figure
2
Although invention has been described by embodiment, should be understood that so openly can not explain the restriction of the present invention of opposing.To those skilled in the art, above-mentionedly openly make various conversion and to revise all be conspicuous.Therefore, in connotation of the present invention and scope, appended claims should be interpreted as having contained all conversion and modification.
Claims (7)
1. a method of making GaN based vertical structure LED metal substrate adopts two or more metal to carry out alternatively plate, obtains the metal substrate that multiple layer metal is formed, and has the collocation of a kind of tension stress metal and a kind of stress metallographic phase in the described metal at least.
2. the method for claim 1 is characterized in that, described tension stress metal is selected from Cu, Co and Pd.
3. the method for claim 1 is characterized in that, described stress metal is selected from Ni and W.
4. the method for claim 1 is characterized in that, adopts Cu and Ni to carry out alternatively plate.
5. the method for claim 1 is characterized in that, electric current is 0.1A～20A during plating.
6. the method for claim 1 is characterized in that, the thickness of every layer of metal is in 1～100 micrometer range.
7. as the described method of arbitrary claim in the claim 1～6, it is characterized in that this method comprises the steps:
1) sample is put into the first Metal plating pond, used first current standard, electroplate first kind of metal to certain thickness;
2) sample is put into the second Metal plating pond, used second current standard, electroplate second kind of metal to certain thickness;
3) sample is put back to the first Metal plating pond, perhaps put into the 3rd Metal plating pond, use the 3rd current standard, plating first or the third metal are to certain thickness;
And so forth, be electroplated to required metal substrate thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810226571A CN101736374A (en) | 2008-11-14 | 2008-11-14 | Method for manufacturing LED metal substrate with gallium nitride-based vertical structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810226571A CN101736374A (en) | 2008-11-14 | 2008-11-14 | Method for manufacturing LED metal substrate with gallium nitride-based vertical structure |
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| CN101736374A true CN101736374A (en) | 2010-06-16 |
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| CN200810226571A Pending CN101736374A (en) | 2008-11-14 | 2008-11-14 | Method for manufacturing LED metal substrate with gallium nitride-based vertical structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101974772A (en) * | 2010-08-11 | 2011-02-16 | 中国科学院半导体研究所 | Secondary electroplating method of GaN based LED transferred substrate with vertical structure |
| US9496454B2 (en) | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
-
2008
- 2008-11-14 CN CN200810226571A patent/CN101736374A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101974772A (en) * | 2010-08-11 | 2011-02-16 | 中国科学院半导体研究所 | Secondary electroplating method of GaN based LED transferred substrate with vertical structure |
| CN101974772B (en) * | 2010-08-11 | 2012-06-27 | 中国科学院半导体研究所 | Secondary electroplating method of GaN based LED transferred substrate with vertical structure |
| US9496454B2 (en) | 2011-03-22 | 2016-11-15 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
| US10483481B2 (en) | 2011-03-22 | 2019-11-19 | Micron Technology, Inc. | Solid state optoelectronic device with plated support substrate |
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Open date: 20100616 |