CN101728454A - Panel structure, method for making panel electrode and method for forming metal silicide - Google Patents
Panel structure, method for making panel electrode and method for forming metal silicide Download PDFInfo
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- CN101728454A CN101728454A CN200810173008A CN200810173008A CN101728454A CN 101728454 A CN101728454 A CN 101728454A CN 200810173008 A CN200810173008 A CN 200810173008A CN 200810173008 A CN200810173008 A CN 200810173008A CN 101728454 A CN101728454 A CN 101728454A
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Abstract
The invention relates to a method for making a solar cell panel electrode, which comprises providing a semiconductor silicon chip substrate, wherein the semiconductor silicon chip substrate is provided with an anti-reflecting layer or a dielectric layer and a first metal layer in turn; displaying a pattern on the first metal layer by means of laser beams, performing the laser alloying treatment of the layers from the first metal layer to the anti-reflecting layer according to the lines of the pattern, and forming a metal silicide on the semiconductor silicon chip substrate according to the pattern lines; removing the first metal layer by solution; forming a first electrode connected with the metal silicide on the surface of the anti-reflecting layer; and forming a second electrode on one side, opposite to the anti-reflecting layer, of the semiconductor silicon chip substrate. Furthermore, the invention also discloses a panel structure of the solar cell and a method for forming the metal silicide.
Description
Technical field
The invention relates to a kind of manufacture method of electrode of solar battery panel, particularly relevant for a kind of method of utilizing the laser display arbitrary graphic with making solar battery panel electrode.
Background technology
Traditional solar cell has follow procedure usually at present: (1) crystal pulling program, and its main raw material is a silicon dioxide, utilizes crystal seed to become to grow a monocrystalline silicon heavy stone used as an anchor (Ingot) in crystal pulling furnace; (2) repair the angular travel preface, the general used silicon chip (wafer) of microelectronic industry, be directly the monocrystalline silicon heavy stone used as an anchor to be cut into slices, but for solar cell, usually must be connected into a square array to many chips, tightr for what square array was arranged, major part is all repaiied the monocrystalline silicon heavy stone used as an anchor angle earlier and is become square; (3) section program is cut into the about 0.5 millimeter silicon chip of thickness with slicing machine (Slider) with the monocrystalline silicon heavy stone used as an anchor; (4) etching and polishing program, etched purpose are to remove the stressor layers (strained layer) that is caused in the slice process, and the purpose of polishing is will reduce particulate (particle) attached to the possibility on the silicon chip; (5) cleaning procedure is removed the foreign-matter contamination of silicon chip surface with deionized water (DIwater); (6) diffusion process (as shown in Figure 1), general solar cell 90 all adopts the substrate 901 of p type, utilizes the processing of elevated temperature heat diffusion, makes on the substrate of p type and forms the very thin n N-type semiconductor N 902 of one deck.Before carrying out diffusion process, the surface can be made tissue (Texturing) structure of roughening, and add anti-reflecting layer 903, to reduce the reflection of light amount; (7) wire mark program with the silicon chip that completes, is coated silver (Ag) glue and aluminium (Al) glue, with a wire mark machine according to a web plate (silk) with the two sides of a kind of default graphic printing at silicon chip; (8) co-sintered program, the silicon chip of elargol and aluminium glue will be printed with, pass through high temperature sintering furnace jointly, make elargol and aluminium glue can be respectively produce eutectic structure with the corresponding surface of silicon chip, and therefore have certain ohmic contact (ohmic contact) with silicon chip, so, just can pick out conductive electrode 904,905, so can finish a simple solar cell panel on the surface of silicon chip.
Because when silicon chip carries out the wire mark program at every turn, manufacturer needs different types of predetermined pattern is produced on the web plate one by one according to a complicated program, after the web plate making finishes, could again the figure on these web plates be printed on the silicon chip through the wire mark machine one by one.
Owing to make web plate to carry out the process of wire mark program, quite expend time in and manpower, the cost that is reflected certainly will be quite high, and a large amount of manufacturings of necessary cooperation just can the unit's of shakeouing manufacturing cost.Yet, for limited at product quantity, for multiple a spot of technology or at for the manufacturer of customizing products, certainly will produce the burden of many costs, and can't reduce the unit price of product, thus, the occupation rate for market just can't effectively promote.
Summary of the invention
In view of this, a purpose of the present invention on silicon chip surface, and utilizes laser beam that silicon chip is carried out alloying at the figure that utilizes a laser beam that conductive electrode is provided, and omitting the carrying out of above-mentioned wire mark program and sintering program, and then saves time and cost.
Another object of the present invention makes the customized figure of conductive electrode at random to revise and to change, so that the figure selecting of client's higher elasticity to be provided providing the laser projections that can revise figure fast to use.
Another purpose of the present invention is to omit the making of wire mark program and web plate thereof, changing with laser beam provides the figure of conductive electrode on silicon chip surface, can reduce the manufacturing of few products or the unit manufacturing cost of customizing products, and then further reduce the unit price of product.
Another purpose of the present invention is in the resistance that further reduces conductive electrode, to improve the efficient of solar cell output electric current.
According to above-mentioned purpose of the present invention, a kind of manufacture method of electrode of solar battery panel is proposed, comprise semiconductor silicon chip substrate is provided to have an anti-reflecting layer on the semiconductor silicon plate base.Produce the first metal layer on anti-reflecting layer.Utilize laser beam to show a figure on the first metal layer, and, make laser beam carry out Laser Alloying Treatment, and the lines of corresponding figure produce a metal silicide on the semiconductor silicon plate base the first metal layer to anti-reflecting layer according to the lines of figure.Utilize the solution removal the first metal layer.Produce first electrode that connects metal silicide on the anti-reflecting layer surface.Producing one second electrode is opposed on the one side of anti-reflecting layer in the semiconductor silicon plate base.
Another embodiment of the present invention proposes a kind of laser beam show electrode figure that utilizes in addition to form the method for metal silicide, is applicable to that this method comprises in the electrode manufacture craft of a solar cell: provide a P type doped layer that piles up mutually, a N type doped layer; Make an anti-reflecting layer on this N type doped layer; Produce a first metal layer on this anti-reflecting layer; Utilize a plurality of laser beams to show that vertically a figure is on this first metal layer, and make the lines of this laser beam according to this figure, this the first metal layer to this anti-reflecting layer is carried out Laser Alloying Treatment, and penetrate this anti-reflecting layer, produce a metal silicide to this N type doped layer surface; And utilize this first metal layer of metal etch solution removal.
Another embodiment of the present invention proposes a kind of panel construction of solar cell again, comprises semiconductor silicon chip substrate, an anti-reflecting layer, a metal silicide, one first electrode and one second electrode.The semiconductor silicon plate base comprises a P type doped layer and a N type doped layer that piles up mutually.Anti-reflecting layer is located on the P type doped layer or N type doped layer of semiconductor silicon plate base.First electrode is located in the anti-reflecting layer and is emerging in the surface of anti-reflecting layer.Metal silicide is located at P type doped layer or N type doped layer and is connected first electrode.Second electrode is located on the one side that is opposed to anti-reflecting layer on the semiconductor silicon plate base.
The present invention can utilize said method to make solar battery panel of the present invention and panel electrode thereof, time and cost have not only been saved, but also the figure selecting of client's higher elasticity can be provided, and the panel of making and panel electrode thereof can improve the efficient of solar cell output electric current.
Description of drawings
For above and other objects of the present invention, feature, advantage and example can be become apparent, being described in detail as follows of appended accompanying drawing:
Fig. 1 is the panel construction schematic diagram shown in the prior art;
Fig. 2 is according to the flow chart shown in the example of the present invention;
Fig. 3 A-3K is a represented structural representation in each step of Fig. 2.
[primary clustering symbol description]
Prior art
90: solar cell 901: substrate
902:n N-type semiconductor N 903: anti-reflecting layer
904: conductive electrode 905: conductive electrode
The present invention
1: solar battery panel 37: dielectric layer
10: 40: the second metal levels of semiconductor silicon plate base
11:P type doped layer 43: another metal silicide
50: the first electrodes of 12:N type doped layer
20: 60: the second electrodes of anti-reflecting layer
30: the first metal layer 70: laser beam
31: sunk area 80: metal etch solution
33: metal silicide 201-209: step
35: metallic compound
Embodiment
The structure of following one first feature of in this specification, being narrated of the present invention cover or be positioned at one second feature above, this may comprise this first and second embodiment that is characterized as direct contact, but may also comprise the embodiment that inserts additional features between this first and second feature, represent that promptly this first and second feature is not direct contact.
The present invention omits the program of above-mentioned wire mark and sintering, and exposes the manufacture method of a kind of solar battery panel and electrode processing procedure thereof, comprises utilizing laser beam show electrode figure to form the method for metal silicide.It wherein is figure according to conductive electrode to be presented, utilize laser generator immediately projecting laser on silicon chip surface, and utilize different parameters to control laser, and silicon chip is carried out Laser Alloying Treatment, so that the conductive electrode of figure that formation on the product after the Laser Alloying Treatment is desired to present.So, the present invention can provide quick and elastomeric graphic change to satisfy the demand of the customized conductive electrode of solar battery panel.
The invention provides a preferred embodiment further to illustrate the technical characterictic of this case.Please refer to shown in Figure 2ly, Fig. 2 is according to the flow chart shown in the preferred embodiment of the present invention.In order to realize the method for making its electrode of solar battery panel of the present invention, the step of its exposure is as follows:
Step (201) provides semiconductor silicon chip substrate 10 (as shown in Figure 3A):
This semiconductor silicon plate base 10 comprises a P type doped layer 11, a N type doped layer 12, and P type doped layer 11 piles up mutually with N type doped layer 12, and semiconductor silicon plate base 10 of the present invention is not limited to monocrystalline silicon heavy stone used as an anchor, polysilicon heavy stone used as an anchor and amorphous silicon membrane;
Step (202) is provided with an anti-reflecting layer 20 (or dielectric layer) (shown in Fig. 3 B) on semiconductor silicon plate base 10:
The material of anti-reflecting layer (or dielectric layer) for example can be nitride (nitride), the multilayer film (TiO of oxide (oxide) or other material
2/ Al
2O
3) pile up and form, and be formed on the semiconductor silicon plate base 10 in the plated film mode.Wherein the anti-reflecting layer 20 of present embodiment is to be positioned on the N type doped layer 12 in the drawings.But do not limit anti-reflecting layer 20 among the present invention is to be configured on P type doped layer 11 or the N type doped layer 12;
Step (203) anti-reflecting layer 20 is provided with a first metal layer 30 (shown in Fig. 3 C):
In this step, the first metal layer 30 for example can evaporation (Evaporation) or the mode of deposition (deposition) be produced on the anti-reflecting layer 20, and for example can be titanium (Ti), cobalt metal (Co), tungsten metal (W), platinum (Pt) hafnium metal (Hf), tantalum metal (Ta), molybdenum (Mo), chromium metal (Cr) or palladium metal (Pd), metal (Au), silver metal (Ag), copper metal (Cu), aluminum metal (Al), this embodiment is that the employing titanium is the material of the first metal layer 30.Yet, the invention is not restricted to above-mentioned metal species;
Step (204) utilizes laser beam 70 to show a figure (shown in Fig. 3 D) on the first metal layer 30:
Desire to present the figure of conductive electrode according to the dealer, for example can be literal, trade mark, decorative pattern or other insignificant figure, utilize laser generator to send one or the laser beam 70 of multi beam, and vertically be incident upon on the first metal layer 30, to arrange out the figure of conductive electrode.Wherein when the dealer need revise or customize the small lot panel, need not make and wait for the web plate of corresponding figure, the substitute is the dealer can be according to the editor of computer software, the figure of conductive electrode to be presented is provided in real time, also can revise or change out different figures at any time, with the progress of quickening to make.
Step (205) is according to the lines of figure, makes laser beam 70 pass the first metal layer 30 and anti-reflecting layer 20 and carries out Laser Alloying Treatment (shown in Fig. 3 E):
In this step, laser beam 70 projected graphics are to the first metal layer 30 time, because laser beam 70 can produce the characteristic of high temperature, can begin Laser Alloying Treatment is carried out in the position of the first metal layer 30 and anti-reflecting layer 20 common corresponding above-mentioned pattern lines, when treating that laser beam 70 penetrates the first metal layer 30 and anti-reflecting layer 20, produce eutectic structure with semiconductor silicon plate base 10 (may be on P type doped layer 11 or the N type doped layer 12), make it in the first metal layer 30 and anti-reflecting layer 20 formed sunk areas 31, form a metal silicide 33 and (be titanium disilicide, TiSi in the present embodiment
2) and a metallic compound 35 (may be metal nitride or metal oxide etc., it in the present embodiment titanium nitride, TiN), wherein metal silicide 33 is positioned at the bottom surface of sunk area 31, be the position of (may be on P type doped layer 11 or the N type doped layer 12) corresponding pattern line on the semiconductor silicon plate base 10, and metallic compound 35 is centered around the inwall of the sunk area 31 of the first metal layer 30 and anti-reflecting layer 20.
What deserves to be mentioned is that at this laser species that material and thickness adopted of different anti-reflecting layers 20, the first metal layer 30 (as: ruddiness, green glow or ultraviolet light etc.), power, frequency, penetration depth and processing time are just inequality.The first metal layer 30 at titanium, this embodiment adopts multi-mode (multimode) laser beam 70, this laser beam 70 is not defined as pulsed (pulsed) or continous way (continued) laser beam 70, its frequency is between 10-150 (kHz), its power for example only supplies more than 50 milliwatts to penetrate till the anti-reflecting layer 20, and the thickness 20 of anti-reflecting layer for example is the 10-400 nanometer.
Step (206) is utilized solution removal the first metal layer 30 (shown in Fig. 3 F, Fig. 3 G):
Removing for the mode of utilizing chemical wet in this step not have the first metal layer 30 that acts on, optionally utilizes the metallic compound 35 of remaining the first metal layer 30 on a metal etch solution 80 antagonistic reflex layers 20 and sunk area 31 inwalls to remove operation.
Because the material of different the first metal layers 30 can act on different metal etching solution 80, for example above-mentioned metal material, the pairing metal etch solution 80 of chromium (Cr) can be Ce (NO
3)
2, HNO
3The aqueous solution, the pairing metal etch solution 80 of tungsten (W) can be 3HCl/H
2O
2Or the pairing metal etch solution 80 of palladium (Pd) can be KI/I
2, and metal silicide 33 material behaviors own and the first metal layer 30 materials is different, so metal silicide 33 can't remove operation at this and be removed.Among this embodiment, because the first metal layer 30 is the material of titanium, therefore the metal etch solution 80 that optionally adopts is NH
4OH/H
2O
2
The another side that step (207) semiconductor silicon plate base 10 is provided with anti-reflecting layer 20 is provided with one second metal level 40 (shown in Fig. 3 H, Fig. 3 I and Fig. 3 J):
Be not limited to the production method of step (203) or carry out above-mentioned wire mark program at semiconductor silicon plate base 10 (may be on the N type doped layer 12 or P type doped layer 11, the semiconductor silicon plate base 10 that is connected in contrast to anti-reflecting layer 20).When the another side of semiconductor silicon plate base 10 is desired to carry out as the production method of step (203)～(204) must add a dielectric layer 37 and be used as protection when making electrode,, can avoid the generation of leakage current simultaneously again in order to avoid whole face plates when electroplating.So, step (207) in this embodiment, the another side that semiconductor silicon plate base 10 is provided with anti-reflecting layer 20 is provided with a dielectric layer 37, wherein dielectric layer 37 for example is below 2 microns, second metal level 40 is arranged on the dielectric layer 37, follow-up then also with above-mentioned step (204) to step (206), and utilize laser beam 70 to show that another figure is on second metal level 40, and after laser beam 70 penetrates dielectric layer 37, therefore produce another metal silicide 43, then, utilize remaining second metal level 40 of another solution removal, just can obtain structure as figure.
Step (208) produces one first electrode 50 with connection metal silicide 33, and is emerging in anti-reflecting layer 20 surfaces (shown in Fig. 3 K):
In this step, because metal silicide 33 tool conductive characteristics, make to produce one first electrode 50 on the metal silicide 33 in the sunk area 31, and first electrode 50 is emerging in anti-reflecting layer 20 surfaces to be provided as the conductive electrode of solar cell.Wherein the formation of first electrode 50 can a plating mode (Electroplating), electroless-plating (Electroless Plating), chemical plating (Chemical Plating) or autocatalytic plating (Auto-catalytic Plating) or the like mode.
Step (209) produces one second electrode 60, and is emerging in semiconductor silicon plate base 10 (may be on the N type doped layer 12 or P type doped layer 11, the semiconductor silicon plate base 10 that is connected in contrast to anti-reflecting layer 20) (shown in Fig. 3 K):
Therefore, by above-mentioned step, just can form the panel construction of solar cell of the present invention, and because the present invention carries out laser alloying to the first metal layer 30 and anti-reflecting layer 20, the conductive electrode that forms after the program of wire mark and sintering, but the more conforming metal silicide 33 of the present invention's output, the contact resistance that can reduce conductive electrode by control laser beam above-mentioned parameter further (preferablely reaches 10
-8Ω/CM
2), to improve the efficient of solar cell output electric current.
Though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking the scope that the accompanying Claim book defined.
Claims (10)
1. the method for the electrode of solar battery panel making is characterized in that, comprising:
Semiconductor silicon chip substrate is provided, has an anti-reflecting layer on this semiconductor silicon plate base, the semiconductor silicon plate base comprises a P type doped layer, a N type doped layer that piles up mutually;
Produce a first metal layer on this anti-reflecting layer;
Utilize a laser beam to show that a figure is on this first metal layer, and make the lines of this laser beam according to this figure, this the first metal layer to this anti-reflecting layer is carried out Laser Alloying Treatment, and the lines to this figure produce a metal silicide on this semiconductor silicon plate base;
Optionally utilize this first metal layer of a solution removal;
Produce one first electrode connecting this metal silicide, and be emerging in this anti-reflecting layer surface; And
Producing one second electrode is opposed on the one side of this anti-reflecting layer in this semiconductor silicon plate base.
2. method according to claim 1 is characterized in that, removes this first metal layer and produces between this first electrode, also comprises:
Provide a dielectric layer to be opposed on this one side of this anti-reflecting layer in this semiconductor silicon plate base;
Provide one second metal level on this dielectric layer;
Utilize a laser beam to show that another figure is on this second metal level, and make the lines of this laser beam according to this another figure, this second metal level is carried out Laser Alloying Treatment, and on this semiconductor silicon plate base, lines that should another figure are produced another metal silicide, to connect this second electrode; And
Optionally utilize this second metal level of another solution removal.
3. method according to claim 1 is characterized in that, this laser beam, also comprises when this anti-reflecting layer carries out Laser Alloying Treatment this first metal layer:
Penetrate this first metal layer and this anti-reflecting layer to form a sunk area, wherein metal silicide is positioned on this semiconductor silicon plate base of this sunk area bottom surface;
Also produce a metallic compound in this sunk area, wherein this metallic compound is centered around this first metal layer and this anti-reflecting layer to inwall that should sunk area; And
This solution is a metal etch solution, utilizes the mode of chemical wet to remove this first metal layer and this metallic compound simultaneously.
4. method according to claim 3, it is characterized in that the material of this first metal layer is titanium, cobalt metal, tungsten metal, platinum, hafnium metal, tantalum metal, molybdenum, chromium metal, palladium metal, metal, silver metal, copper metal or aluminum metal.
5. method according to claim 4 is characterized in that, when this first metal layer was the material of titanium, this metal etch solution was NH
4OH/H
2O
2
When this first metal layer was the material of chromium metal, this metal etch solution was Ce (NO
3)
2, HNO
3The aqueous solution;
When this first metal layer was the material of tungsten metal, this metal etch solution was 3HCl/H
2O
2Or
When this first metal layer was the material of palladium metal, this metal etch solution was KI/I
2
6. method according to claim 1 is characterized in that, this first electrode or this second electrode are to be formed on this metal silicide with a plating mode, an electroless-plating, a chemical plating or an autocatalytic plating respectively.
7. method according to claim 1 is characterized in that, this anti-reflecting layer is positioned on this P type doped layer or this N type doped layer.
8. one kind is utilized laser beam show electrode figure to form the method for metal silicide, is applicable in the electrode manufacture craft of a solar cell that it is characterized in that, this method comprises:
An one P type doped layer that piles up mutually, a N type doped layer are provided;
Make an anti-reflecting layer on this N type doped layer;
Produce a first metal layer on this anti-reflecting layer;
Utilize a plurality of laser beams to show that vertically a figure is on this first metal layer, and make the lines of this laser beam according to this figure, this the first metal layer to this anti-reflecting layer is carried out Laser Alloying Treatment, and penetrate this anti-reflecting layer, produce a metal silicide to this N type doped layer surface; And
Utilize this first metal layer of metal etch solution removal.
9. the panel construction of a solar cell is characterized in that, comprising:
Semiconductor silicon chip substrate comprises the P type doped layer and the N type doped layer that pile up mutually;
One anti-reflecting layer is located on this semiconductor silicon plate base;
One first electrode is located in this anti-reflecting layer and is revealed in the surface of this anti-reflecting layer;
One metal silicide, be located at this P type doped layer and this N type doped layer one of them, and connect this first electrode; And
One second electrode is located on this semiconductor silicon plate base and is opposed on the one side of this anti-reflecting layer.
10. the panel construction of solar cell according to claim 9 is characterized in that, this second electrode is located on the dielectric layer, and this dielectric layer is positioned on this semiconductor silicon plate base and is opposed on the one side of this anti-reflecting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810173008A CN101728454A (en) | 2008-10-29 | 2008-10-29 | Panel structure, method for making panel electrode and method for forming metal silicide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810173008A CN101728454A (en) | 2008-10-29 | 2008-10-29 | Panel structure, method for making panel electrode and method for forming metal silicide |
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| Publication Number | Publication Date |
|---|---|
| CN101728454A true CN101728454A (en) | 2010-06-09 |
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ID=42449020
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|---|---|---|---|
| CN200810173008A Pending CN101728454A (en) | 2008-10-29 | 2008-10-29 | Panel structure, method for making panel electrode and method for forming metal silicide |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163649A (en) * | 2010-12-29 | 2011-08-24 | 友达光电股份有限公司 | Method for manufacturing solar cell |
| CN103650151A (en) * | 2011-07-14 | 2014-03-19 | 国际商业机器公司 | Photovoltaic device with aluminum plated back surface field and method of forming same |
| CN105679912A (en) * | 2014-11-21 | 2016-06-15 | 新能光电科技股份有限公司 | Color solar cell and solar cell panel containing same |
| CN108711579A (en) * | 2013-12-20 | 2018-10-26 | 太阳能公司 | Manufacturing has the solar cell emitter region of the p-type and N-type region framework that distinguish |
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2008
- 2008-10-29 CN CN200810173008A patent/CN101728454A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163649A (en) * | 2010-12-29 | 2011-08-24 | 友达光电股份有限公司 | Method for manufacturing solar cell |
| US8338217B2 (en) | 2010-12-29 | 2012-12-25 | Au Optronics Corporation | Method of fabricating a solar cell |
| CN102163649B (en) * | 2010-12-29 | 2015-05-20 | 友达光电股份有限公司 | Method for manufacturing solar cell |
| CN103650151A (en) * | 2011-07-14 | 2014-03-19 | 国际商业机器公司 | Photovoltaic device with aluminum plated back surface field and method of forming same |
| CN103650151B (en) * | 2011-07-14 | 2017-02-15 | 国际商业机器公司 | Photovoltaic device with aluminum plated back surface field and method of forming same |
| CN108711579A (en) * | 2013-12-20 | 2018-10-26 | 太阳能公司 | Manufacturing has the solar cell emitter region of the p-type and N-type region framework that distinguish |
| US11502208B2 (en) | 2013-12-20 | 2022-11-15 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated P-type and N-type region architectures |
| CN105679912A (en) * | 2014-11-21 | 2016-06-15 | 新能光电科技股份有限公司 | Color solar cell and solar cell panel containing same |
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Open date: 20100609 |