CN101728346A - Lug structure and making method thereof - Google Patents

Lug structure and making method thereof Download PDF

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Publication number
CN101728346A
CN101728346A CN200810169241A CN200810169241A CN101728346A CN 101728346 A CN101728346 A CN 101728346A CN 200810169241 A CN200810169241 A CN 200810169241A CN 200810169241 A CN200810169241 A CN 200810169241A CN 101728346 A CN101728346 A CN 101728346A
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China
Prior art keywords
elastic layer
projection
cube structure
layer
projection cube
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Pending
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CN200810169241A
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Chinese (zh)
Inventor
孙伟豪
汤宝云
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Hannstar Display Corp
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Hannstar Display Corp
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Publication date
Application filed by Hannstar Display Corp filed Critical Hannstar Display Corp
Priority to CN200810169241A priority Critical patent/CN101728346A/en
Publication of CN101728346A publication Critical patent/CN101728346A/en
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Abstract

The invention relates to a lug structure and a making method thereof. The lug structure comprises a semiconductor substrate, a protective layer, an elastic layer and a plurality of lugs, wherein a plurality of connection pads are formed on the surface of the semiconductor substrate; the protective layer is covered on the substrate and provided with openings corresponding to the connection pads, thereby exposing part of each connection pad as the electric connection position; the elastic layer is positioned on the protective layer; and each lug is positioned on the electric connection position and extends to the elastic layer, thereby providing the space between the lug elasticity and the amount of deformation by means of the elastic layer. In the invention, a large-size (at least 20 mu m) elastic layer pattern making procedure is utilized to form the elastic layer with a proper pattern, so that the lug structure can be suitable for IC elements with superfine pitch.

Description

Projection cube structure and preparation method thereof
[technical field]
The invention relates to a kind of metal bump structure and preparation method thereof, particularly about a kind of projection cube structure and preparation method thereof.
[background technology]
LCD (Liquid Crystal display, LCD) include array (array), structure cell (cell) and module three sections processing procedures such as (module) in the processing procedure, wherein the main purpose of module set section processing procedure is the encapsulation drive IC, and the module set section processing procedure is divided into three parts, and it is to be respectively COG (chip on glass), OLB (outer lead bonding) and AOP (ACF on PCB).In three big sections processing procedures of LCM (LCD Module), have the high density that engages with COG module structure packing technique and reach advantage cheaply, be the key design that reduces cost.And so-called crystal glass (the Chip onGlass that covers; COG) be module structure packing technique for high pin number (high pin count) and ultra fine pitch (fine pitch) flat-panel screens (Flat Panel Display).The technical characterictic of this module structure dress is to have minimum junction point between drive IC signal source and face glass substrate and it must not use flexible base plate, therefore, can overcome coil type encapsulation (TCP) produces pin breakage easily because of bending phenomenon, and then improve the reliability of product.
Contain projection (bump) in traditional COG drive IC, purpose be for will with the LCD conducting, allow the signal of drive IC be sent to LCD by projection smoothly, so that do the transmission of picture element signal and the switching of picture.See also Fig. 1, it is traditional projection cube structure, and as shown in the figure, traditional projection cube structure includes the semiconductor-based end 12 that a surface is provided with a connection gasket 10, and wherein, connection gasket 10 is to form with metal materials such as aluminium (Al), gold (Au) or other alloys; One covers the protective layer (passivation) 14 of substrate 12 and part connection gasket 10, and it is the position that defines connection gasket 10 and external circuit electrically connect; One is positioned at the projection lower metal layer 16 on the connection gasket 10 that protective layer 14 and self-insurance sheath 14 manifest, and wherein, projection lower metal layer 16 its materials can be metal materials such as aluminium (Al), titanium (Ti), tungsten (W), gold (Au) or its alloy and form; And a projection 18 that is positioned on the projection lower metal layer 16, its general material is a gold.In said structure, because projection 20 integral body are metal material, for (non-conductive film, NCF) elasticity and deflection have obvious deficiency on the processing procedure at the COG non-conductive adhesive on the material behavior.
Therefore for solving the aforesaid drawbacks, derive a kind of brand-new intelligent projection cube structure (smartbump) 20, shown in Fig. 2 (a)~Fig. 2 (b).The intelligent projection cube structure 20 of this kind includes the semiconductor-based end 22 that a surface is provided with a connection gasket 21; One covers the protective layer (passivation) 23 of substrate 22 and part connection gasket 21; One is covered in the PI layer (elastic layer) 24 on the connection gasket 21 that protective layer 23 and part self-insurance sheath 23 manifest, and it is the position that defines connection gasket 21 and external circuit electrically connect; One is positioned at PI layer 24 and the projection lower metal layer 25 on the connection gasket 21 that PI layer 24 manifests; An and projection 26 that is positioned on the projection lower metal layer 25.Intelligent projection cube structure 20 is to form a patterning island PI layer 24 structure in each projection 26 bottom, with the elasticity of increase projection integral body and the processing procedure stability of COG NCF.In view of this, when intelligent projection cube structure 20 is made, be to need elder generation's formation island PI layer 24 on the position to be set in the desire of corresponding projection 26.
But along with the raising of LCD picture element and the progress of IC design and processing procedure, the last required pin number that holds of IC also increases considerably, therefore IC also must continue the trend development toward fine pitch (fine pitch), and relatively, the width of projection must reduce to hold more fine pitch.Generally speaking, finepitch IC bump pitch is usually less than 20 μ m, and be 20 μ m because of the limiting value of distance between the exposure of PI layer material, the development capability now, under such spacing limit, will make that spacing is that the island elastic layer of a (a<20 μ m) faces a big bottleneck on making.
In view of this, the present invention satisfies the disappearance at above-mentioned prior art, proposes a kind of brand-new projection cube structure and preparation method thereof, effectively to overcome these above-mentioned problems.
[summary of the invention]
Main purpose of the present invention is to provide a kind of projection cube structure and preparation method thereof, it is to utilize an elastic layer patterning process than large scale (〉=20 μ m), to form posterior limiting at least, projection cube structure provides suitable elasticity of projection and deflection, so that can be applicable to the IC of fine pitch.
Another object of the present invention is to provide a kind of projection cube structure and preparation method thereof, its zigzag elastic layer helps successive process when using aeolotropic conductive electrically to engage, and unnecessary conducting resinl carries out binder removal.
In order to achieve the above object, the invention provides a kind of projection cube structure, it includes the semiconductor-based end that is formed with several connection gaskets on the surface; One protective layer, it is to be covered in this substrate, protective layer has an opening corresponding to each this connection gasket, with the exposed portions serve connection gasket, electrically connects the position to be provided as; One is positioned at the elastic layer on the protective layer; And several projections, its each is to be located at corresponding these to electrically connect on positions, and extends on the elastic layer.
The present invention also provides a kind of projection cube structure, and it includes the semiconductor substrate, is formed with several connection gaskets on it; Posterior limiting, it is to be positioned at at semiconductor-based the end; And several projections, it is to be located on the connection gasket that should electrically connect, and extends to this elastic layer.
The present invention also provides a kind of manufacture method of projection, and it includes several connection gaskets of formation in the semiconductor substrate; Form posterior limiting in the semiconductor substrate; And form several projections, and extend to this elastic layer corresponding on those connection gaskets.
In sum, the present invention utilizes one than large scale (〉=20 μ m) patterning process, to form a patterning elastic layer, provides suitable elasticity of projection and deflection, so that smart bump structure can be applicable to the IC of fine pitch; Its zigzag elastic layer helps successive process when using aeolotropic conductive electrically to engage, and unnecessary conducting resinl carries out binder removal.
[description of drawings]
Fig. 1 is the structural representation of existing metal coupling.
Fig. 2 (a) is the structural representation of existing intelligent projection.
Fig. 2 (b) is the schematic top plan view of existing intelligent projection.
Fig. 3 (a) is respectively to be the first specific embodiment schematic perspective view, cutaway view and the topology layout schematic diagram of intelligent projection of the present invention to Fig. 3 (c).
Fig. 4 is the making step flow chart of first specific embodiment of the present invention.
Fig. 5 (a) is respectively to be the second specific embodiment schematic perspective view, cutaway view and the topology layout schematic diagram of intelligent projection of the present invention to Fig. 5 (c).
Fig. 6 is the another kind of embodiment schematic diagram of the elastic layer of intelligent projection of the present invention.
Fig. 7 (a) is the another specific embodiment schematic diagram of intelligent projection of the present invention.
Fig. 7 (b) is the vertical view of Fig. 7 (a).
10 connection gaskets, 20 intelligent projection cube structures
12 connection gaskets of the semiconductor-based ends 21
22 substrates of 14 protective layers
16 projection lower metal layers, 23 protective layers
18 projections, 24 PI layers
25 projection lower metal layers, 54 protective layers
26 projections 56 electrically connect the position
30 intelligent projection 58 elastic layers
32 connection gaskets, 60 projections
34 projection lower metal layers of the semiconductor-based ends 61
36 protective layers, 62 elastic layers
38 electrically connect position 64 connection gaskets
40 first elastic layers 65 electrically connect the position
66 substrates of 42 second elastic layers
44 projections, 68 protective layers
45 projection lower metal layers, 70 elastic layers
50 connection gaskets, 72 projections
52 substrates, 74 projection lower metal layers
Below illustrate in detail by specific embodiment, when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and is reached.
[embodiment]
The main spiritual place of the intelligent projection cube structure of the first embodiment of the present invention is that framework is formerly under the intelligent structural design of technology, when continuing the trend development toward fine pitch in response to IC, fine pitch IC bump pitch need be lower than 20 μ m, and the development etching limit of elastic layer spacing is under the situation of 20 μ m, provide a kind of brand-new intelligent projection cube structure more nargin to be arranged, form intelligent projection cube structure smoothly by projection foundries (bumping house).
See also Fig. 3 (a)~Fig. 3 (c), it is the schematic perspective view of the first embodiment of the present invention, the cutaway view and topology layout (layout) schematic diagram of transversal bb ' section.Major technique discrepancy with existing smart bump is carrying at least two projection cube structures on the patterning elastic layer of the present invention in this embodiment.
As shown in the figure, the structure of intelligent projection 30 of the present invention includes: a surface is provided with the semiconductor-based end 34 of several connection gaskets 32; One is covered in the protective layer 36 in the substrate 34, and this protective layer 36 32 has an opening corresponding to each this, with exposed portions serve connection gasket 32, forms several and electrically connects position 38; One first elastic layer, 40, the first elastic layers 40 that are covered on the protective layer 36 also extend to first side that electrically connects position 38 simultaneously; One second elastic layer 42, it equally also is covered on the protective layer 36 and extends to second side that electrically connects position 38, and the material of first elastic layer 40 and second elastic layer 42 is non-conductive material and has the elastic characteristic that is better than the metal material, for example pi (PI); And several projections 44, wherein each projection 44 is to be located on the corresponding position that electrically connects position 38 and two ends respectively extend on first elastic layer 40 and second elastic layer 42.Person more, above-mentioned projection 44 more includes metal 45 under the projection.
Under above-mentioned structure, first side of several projections 44 will be positioned on first elastic layer 40 simultaneously, and second side will be located on second elastic layer 42, just first elastic layer 40 will bear the stressed of all projection 44 first sides, it is stressed that second elastic layer 42 then bears all of projection 44 second sides, because the material of first elastic layer 40 and second elastic layer 42 is selected the elastic characteristic that is better than the metal material to have for use, the space of the projection 44 that therefore metal material can be provided increase elasticity and distortion when follow-up electrical connection process.In the first embodiment of the present invention, elastic layer only need be patterned as first microscler elastic layer 40 and second elastic layer, 44 structures, and need not exposure imaging form discontinuous island structure as Fig. 2 (b), and effectively avoided the restriction of elastic layer etching limit spacing (a).
And the making step of the foregoing description sees also Fig. 4, and it is the flow chart of steps of the foregoing description, at first as described in the step S1, forms several connection gaskets 32 in semiconductor substrate 34; Continue as described in the step S2, form a protective layer 36 in substrate 34, this protective layer 36 32 has an opening corresponding to each this, with exposed portions serve connection gasket 32, electrically connects position 38 as several; As described in step S3, extend to first elastic layer 40 that electrically connects on 38 first sides of position in forming one on the protective layer 36, and extend to second elastic layer 42 that electrically connects on 38 second sides of position in forming one on the protective layer 36; At last, as described in step S4, on corresponding to the position of connection gasket 32, form several projections 44, and projection 44 two ends extend to this first elastic layer 40 and this second elastic layer 42 separately.
See also Fig. 5 (a)~Fig. 5 (c), it is the schematic perspective view of the second embodiment of the present invention, the cutaway view and the topology layout schematic diagram of transversal cc ' section.Be that the elastic layer of existing smart bump structure is suitably adjusted in this specific embodiment, should follow-up projection suffered pressure when electrically engaging to change and the designing of deflection.As shown in the figure, the structure of the metal coupling of this embodiment includes: a surface is provided with the semiconductor-based end 52 of several connection gaskets 50; One is covered in the protective layer 54 in the substrate 52, and this protective layer 54 has an opening corresponding to each this connection gasket 50, with the exposed portions serve connection gasket, forms several and electrically connects position 56; One is covered in the patterning elastic layer 58 on the protective layer, and this patterning elastic layer 58 also extends to part simultaneously and electrically connects the position, and the material of patterning elastic layer 58 can be PI, and the pattern of this elastic layer 58 may be defined as a saw-tooth like pattern; And several projections 60, wherein each projection 60 is to be located on the corresponding position that electrically connects position 56 and to extend to patterning elastic layer 58, so that projection 60 and the partially patterned elastic layer 58 that forms electric connection and utilize extension to cover from the electric connection position 56 that patterning elastic layer 58 manifests provide each projection elasticity and deformation space.And projection 60 more includes a projection lower metal layer 61.
Under above-mentioned structure, only need elastic layer is carried out discontinuous island structure with respect to Fig. 2 for the patterning process than large scale, avoided elastic layer is carried out the etching of too small spacing (a) in view of this.
See also Fig. 6, it is the schematic diagram of the another kind of saw-tooth like pattern elastic layer of elastic layer of the present invention, the pattern difference of the elastic layer 58 of Fig. 5 and the elastic layer 62 of Fig. 6 is to answer in the successive process projection suffered pressure when electrically engaging to change to design, to improve the elasticity of this projection integral body.The binder removal of aeolotropic conductive when in addition, jagged pattern also is beneficial to successive process.
See also Fig. 7 (a) and Fig. 7 (b), it is the structural representation and the schematic top plan view of further embodiment of this invention.As shown in the figure, this embodiment includes the semiconductor-based end 66 that is formed with several connection gaskets 64 on the surface; One is covered in the protective layer 68 in the substrate 66, and it has an opening corresponding to connection gasket 64, with exposed portions serve connection gasket 64, is provided as several and electrically connects position 65; One is positioned at the elastic layer 70 on the protective layer 68; And one be positioned at the projection 72 that electrically connects on the position and extend to elastic layer.And above-mentioned projection 72 more includes a projection lower metal layer 74.The characteristics that this embodiment is different from previous embodiment are to be that elastic layer only is positioned on the protective layer, there is no to extend to electrically connect on the position.
In sum, the present invention provides a kind of brand-new projection cube structure and preparation method thereof, and it includes the semiconductor-based end that is formed with several connection gaskets on the surface; One is covered in suprabasil protective layer, and it has an opening corresponding to each connection gasket, with the exposed portions serve connection gasket, is provided as several and electrically connects the position; At least one posterior limiting that is positioned on the protective layer; And several projections, its each be located at corresponding the electric connection on the position, and extend on the elastic layer, so that the space of projection elasticity and deflection to be provided.The present invention utilizes one than large scale (〉=20 μ m) patterning process, to form a patterning elastic layer (parallel wire, strip or zigzag), the smartbump structure provides suitable elasticity of projection and deflection, so that can be applicable to the IC of fine pitch.
The above is preferred embodiment of the present invention only, is not to be used for limiting scope of the invention process.So be that all equalizations of doing according to described feature of the present patent application scope and spirit change or modification, all should be included in the claim of the present invention.

Claims (12)

1. projection cube structure, it includes:
The semiconductor substrate is formed with several connection gaskets on it;
One protective layer, it is to be covered in this substrate, this protective layer has an opening corresponding to each this connection gasket, with this connection gasket of exposed portions serve, electrically connects the position as several;
Posterior limiting, it is to be positioned on this protective layer; And
Several projections, its each is to be located at corresponding these to electrically connect on positions, and extends to this elastic layer.
2. projection cube structure as claimed in claim 1 is characterized in that: the material of this elastic layer is pi (PI).
3. projection cube structure as claimed in claim 1 is characterized in that: the material of this projection is gold or copper.
4. projection cube structure as claimed in claim 1 is characterized in that: this elastic layer is to be one first elastic layer and one second elastic layer, and this first elastic layer and this second elastic layer are to be divided into this projection two bottom sides.
5. projection cube structure as claimed in claim 1 is characterized in that: this elastic layer is a non-conductive material.
6. projection cube structure as claimed in claim 1 is characterized in that: this elastic layer also extends on this electric connection position of part.
7. projection cube structure, it includes:
The semiconductor substrate is formed with several connection gaskets on it;
Posterior limiting, it is to be positioned at at semiconductor-based the end; And
Several projections, it is to be located on the connection gasket that should electrically connect, and extends to this elastic layer.
8. projection cube structure as claimed in claim 7 is characterized in that: the material of this elastic layer is pi (PI).
9. projection cube structure as claimed in claim 7 is characterized in that: the material of this projection is gold or copper.
10. projection cube structure as claimed in claim 7 is characterized in that: this elastic layer is a non-conductive material.
11. projection cube structure as claimed in claim 7 is characterized in that: this elastic layer also extends on this electric connection position of part.
12. a projection method of making the superfine spacing, it includes:
Form several connection gaskets in the semiconductor substrate;
Form posterior limiting in the semiconductor substrate; And
Form several projections corresponding on these connection gaskets, and extend to this elastic layer.
CN200810169241A 2008-10-10 2008-10-10 Lug structure and making method thereof Pending CN101728346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200810169241A CN101728346A (en) 2008-10-10 2008-10-10 Lug structure and making method thereof

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Application Number Priority Date Filing Date Title
CN200810169241A CN101728346A (en) 2008-10-10 2008-10-10 Lug structure and making method thereof

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CN101728346A true CN101728346A (en) 2010-06-09

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681556A (en) * 2012-09-25 2014-03-26 三星电子株式会社 Bump structures, electrical connection structures, and methods of forming the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681556A (en) * 2012-09-25 2014-03-26 三星电子株式会社 Bump structures, electrical connection structures, and methods of forming the same
CN103681556B (en) * 2012-09-25 2018-06-08 三星电子株式会社 Projection cube structure, electric connection structure and forming method thereof

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Application publication date: 20100609