CN101728239B - Removal method of water vapor on crystal wafer surface - Google Patents
Removal method of water vapor on crystal wafer surface Download PDFInfo
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- CN101728239B CN101728239B CN 200910198553 CN200910198553A CN101728239B CN 101728239 B CN101728239 B CN 101728239B CN 200910198553 CN200910198553 CN 200910198553 CN 200910198553 A CN200910198553 A CN 200910198553A CN 101728239 B CN101728239 B CN 101728239B
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Abstract
The invention provides a removal method of water vapor on the crystal wafer surface, comprising the following steps of setting the temperature of a reaction cavity which is set for containing a crystal wafer; putting the crystal wafer in the reaction cavity; inputting nitrogen into the reaction cavity for the first time and exhausting the nitrogen through an exhaust pipeline of the reaction cavity; inputting hydrogen or mixed gas of the hydrogen and the nitrogen into the reaction cavity and exhausting the hydrogen or the mixed gas of the hydrogen and the nitrogen through the exhaust pipeline of the reaction cavity; inputting the nitrogen into the reaction cavity for the second time and exhausting the nitrogen through the exhaust pipeline of the reaction cavity; and taking out the crystal wafer from the reaction cavity. In the invention, nitrogen used in the prior art is replaced with hydrogen so as to completely remove the water vapor on the crystal wafer surface. When being used as an accompany film in a silicon dioxide diaphragm growth technology, the crystal wafer can obviously improve the uniformity of the thickness of a silicon dioxide diaphragm. In addition, the use of hydrogen is also beneficial to removing the water vapor adsorbed on the inner surface of the reaction cavity.
Description
Technical field
The present invention relates to the thin film growth process of semiconductor applications, relate in particular to a kind of water vapor on crystal wafer surface removal method.
Background technology
Silica membrane is a kind of very important film in the semiconductor device, can be used for doing gate oxide, grid side selective oxide layer and buffer oxide layer.Silicon dioxide film growth is to carry out in reaction chamber, and Silicon chip need to be arranged.Common reaction chamber can load 170 wafer at most, and wherein 150 is the product wafer, and 20 is Silicon chip, is placed on product wafer two ends.During such as 150 of fruit product wafer less thaies, then need to load extra Silicon chip, until till filling.So in each growth course, can need a large amount of Silicon chips.The Silicon chip surface must be clean, and wherein of paramount importance is the control of steam.
Along with critical size on the wafer continue dwindle, the uniformity requirement of wafer surface silica membrane thickness is more and more higher.In oxidation technology, if the steam that Silicon chip surface and reaction chamber inner surface adsorb can not get control, it is very poor that the silica membrane uniformity can become, and can not satisfy the technological requirement of present semiconductor device.
Prior art is to use nitrogen under the temperature identical with silicon dioxide growth steam to be taken away.Because nitrogen does not produce adhesion with steam, nitrogen is undesirable with the effect that removes steam, can not satisfy present semiconductor device to the lifting of silica membrane uniformity requirement.
Summary of the invention
Remove halfway problem in order to solve the Silicon chip surface steam that exists in the prior art, the invention provides a kind of thorough removal Silicon chip surface institute and adsorb the method for steam, and reach the purpose of raising silica membrane thickness evenness.
To achieve these goals, the present invention proposes new method, said method comprising the steps of: set the temperature in the reaction chamber of placing described wafer; In described reaction chamber, place described wafer; In described reaction chamber, input nitrogen for the first time, discharge by the gas exhaust piping of described reaction chamber; Toward the mist of the interior inputting hydrogen of described reaction chamber or hydrogen and nitrogen, discharge the mist of described hydrogen or described hydrogen and nitrogen by the gas exhaust piping of described reaction chamber; In described reaction chamber, input nitrogen for the second time, discharge by the gas exhaust piping of described reaction chamber; In described reaction chamber, take out described wafer.
Optionally, in the mist of described hydrogen and nitrogen the volume ratio of nitrogen and hydrogen less than 1: 1.
Optionally, the interior temperature range of described reaction chamber is 400 degrees centigrade to 800 degrees centigrade.
Optionally, the interior temperature of described reaction chamber is 500 degrees centigrade.
Optionally, the time of inputting nitrogen for the first time is 5 minutes, and the nitrogen of per minute input is 20 liters.
Optionally, the time of the mist of the interior inputting hydrogen of past described reaction chamber or hydrogen and nitrogen is 30 minutes.
Optionally, the time of inputting nitrogen for the second time is 5 minutes, and the nitrogen of per minute input is 20 liters.
The useful technique effect of a kind of water vapor on crystal wafer surface of the present invention removal method is: the present invention is in the purification process of wafer, replaced nitrogen of the prior art with hydrogen, hydrogen easily in steam oxygen atom be combined with the chemical bond form, effectively steam is drained by the gas exhaust piping of reaction chamber; Because the molecular weight of hydrogen atom is less than nitrogen-atoms, thereby so that the uniformity of wafer silica membrane thickness be significantly improved; The invention provides in addition wider temperature range, with the demand of the silicon dioxide film growth technique that adapts to various variations.
Description of drawings
Fig. 1 is the flow chart of a kind of water vapor on crystal wafer surface of the present invention removal method.
Embodiment
At first, please refer to Fig. 1, Fig. 1 is the flow chart of a kind of water vapor on crystal wafer surface of the present invention removal method, on scheming, can find out, the present invention includes following steps: step 10: set the temperature in the reaction chamber of placing described wafer, temperature range in the described reaction chamber is 400 degrees centigrade to 800 degrees centigrade, and is preferred, and the temperature in the described reaction chamber is 500 degrees centigrade; Step 11: place described wafer in the described reaction chamber, be positioned over wafer in the reaction chamber and generally all be placed on the quartz boat and be placed on again in the reaction chamber; Step 12: input nitrogen for the first time in described reaction chamber, discharge by the gas exhaust piping of described reaction chamber, the time of inputting nitrogen for the first time is 5 minutes, and the nitrogen of per minute input is 20 liters; Step 13: toward the mist of the interior inputting hydrogen of described reaction chamber or hydrogen and nitrogen, discharge the mist of described hydrogen or described hydrogen and nitrogen by the gas exhaust piping of described reaction chamber, wafer in described hydrogen or mist and the described reaction chamber fully contacts, so that described hydrogen is combined with the steam of described wafer surface absorption, the time of the mist of inputting hydrogen or hydrogen and nitrogen is 30 minutes in the past described reaction chamber, and the volume ratio of nitrogen and hydrogen was less than 1: 1 in the mist of described hydrogen and nitrogen; Step 14: input nitrogen for the second time in described reaction chamber, discharge by the gas exhaust piping of described reaction chamber, the time of inputting nitrogen for the second time is 5 minutes, and the nitrogen of per minute input is 20 liters; Step 15: in described reaction chamber, take out described wafer.
Below, will the preferred embodiment of a kind of water vapor on crystal wafer surface of the present invention removal method be described, to further understanding the present invention.
Below be the concrete experimental procedure of the first embodiment of a kind of water vapor on crystal wafer surface of the present invention removal method:
1. reaction chamber temperature is set in 500 degree Celsius;
2. the quartz boat that will fill Silicon chip pushes reaction chamber;
3. reaction chamber automatic leak detection;
4. input nitrogen and from the blast pipe of reaction chamber, discharging, 20 liters of per minutes continue input and stop after 5 minutes, and the purpose of input nitrogen is in order to drain the air in the reaction chamber;
5. only input pure hydrogen and discharge from the blast pipe of reaction chamber, 10 liters of per minutes continue input and stop after 30 minutes;
6. input nitrogen and from the blast pipe of reaction chamber, discharging, 20 liters of per minutes continue input and stop after 5 minutes, and the purpose of input nitrogen is in order to drain the hydrogen in the reaction chamber;
7. quartz boat goes out reaction chamber.
Below, be the experiment concrete steps of the second embodiment of a kind of water vapor on crystal wafer surface of the present invention removal method:
1. reaction chamber temperature is set in 700 degree Celsius;
2. the quartz boat that will fill Silicon chip pushes reaction chamber;
3. reflect the chamber automatic leak detection;
4. input nitrogen and from the blast pipe of reaction chamber, discharging, 20 liters of per minutes continue input and stop after 5 minutes;
5. simultaneously input comprises the mist of the nitrogen of 1 liter of the hydrogen of 10 liters of per minutes and per minute, and discharges from the blast pipe of reaction chamber, continues input and stops after 30 minutes;
6. input nitrogen and from the blast pipe of reaction chamber, discharging, 20 liters of per minutes continue input and stop after 5 minutes;
7. quartz boat goes out reaction chamber.
The Silicon chip of the processing of the above-mentioned two kinds of processes of process can be used in the technique of silicon dioxide film growth, and has effectively improved the uniformity of silica membrane thickness.
Although the present invention discloses as above with preferred embodiment, so it is not to limit the present invention.Have in the technical field of the present invention and usually know the knowledgeable, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (5)
1. water vapor on crystal wafer surface removal method is characterized in that said method comprising the steps of:
Set the temperature in the reaction chamber of placing described wafer, the temperature range in the described reaction chamber is 400 degrees centigrade to 800 degrees centigrade;
In described reaction chamber, place described wafer;
In described reaction chamber, input nitrogen for the first time, discharge by the gas exhaust piping of described reaction chamber;
Mist toward the interior inputting hydrogen of described reaction chamber or hydrogen and nitrogen, the volume ratio of nitrogen and hydrogen was discharged the mist of described hydrogen or described hydrogen and nitrogen less than 1: 1 in the mist of described hydrogen and nitrogen by the gas exhaust piping of described reaction chamber;
In described reaction chamber, input nitrogen for the second time, discharge by the gas exhaust piping of described reaction chamber;
In described reaction chamber, take out described wafer.
2. water vapor on crystal wafer surface removal method according to claim 1 is characterized in that the temperature in the described reaction chamber is 500 degrees centigrade.
3. water vapor on crystal wafer surface removal method according to claim 1, the time that it is characterized in that inputting for the first time nitrogen is 5 minutes, the nitrogen of per minute input is 20 liters.
4. water vapor on crystal wafer surface removal method according to claim 1 is characterized in that the time of the mist of the interior inputting hydrogen of past described reaction chamber or hydrogen and nitrogen is 30 minutes.
5. water vapor on crystal wafer surface removal method according to claim 1, the time that it is characterized in that inputting for the second time nitrogen is 5 minutes, the nitrogen of per minute input is 20 liters.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910198553 CN101728239B (en) | 2009-11-10 | 2009-11-10 | Removal method of water vapor on crystal wafer surface |
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| CN 200910198553 CN101728239B (en) | 2009-11-10 | 2009-11-10 | Removal method of water vapor on crystal wafer surface |
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| CN101728239A CN101728239A (en) | 2010-06-09 |
| CN101728239B true CN101728239B (en) | 2013-01-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702348A (en) * | 2016-12-29 | 2017-05-24 | 圆融光电科技股份有限公司 | Method for removing water-oxygen molecule impurities in MOCVD equipment reaction chamber |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426747A (en) * | 2012-05-14 | 2013-12-04 | 无锡华润上华科技有限公司 | Method for controlling thickness of wafer oxidation layer generated in furnace tube |
| CN107546230B (en) * | 2017-08-31 | 2020-10-23 | 长江存储科技有限责任公司 | Method for depositing gate line gap oxide of 3D NAND device |
| CN108447770B (en) * | 2018-03-08 | 2020-07-28 | 清华大学 | Preparation method of silicon dioxide film |
| CN109637955B (en) * | 2018-12-29 | 2021-03-12 | 长江存储科技有限责任公司 | Temporary storage system for target object |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1018150A1 (en) * | 1997-07-11 | 2000-07-12 | Applied Materials, Inc. | Method and apparatus for in situ vapor generation |
| WO2000042644A1 (en) * | 1999-01-12 | 2000-07-20 | Sumitomo Sitix Silicon Inc. | System and method for surface passivation |
| CN201162044Y (en) * | 2007-10-25 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | Air-injection device and low-pressure chemical vapor deposition equipment |
| CN101457350A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Air-intake installation, low pressure chemical vapor deposition equipment and chemical vapor deposition method |
-
2009
- 2009-11-10 CN CN 200910198553 patent/CN101728239B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1018150A1 (en) * | 1997-07-11 | 2000-07-12 | Applied Materials, Inc. | Method and apparatus for in situ vapor generation |
| WO2000042644A1 (en) * | 1999-01-12 | 2000-07-20 | Sumitomo Sitix Silicon Inc. | System and method for surface passivation |
| CN201162044Y (en) * | 2007-10-25 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | Air-injection device and low-pressure chemical vapor deposition equipment |
| CN101457350A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Air-intake installation, low pressure chemical vapor deposition equipment and chemical vapor deposition method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702348A (en) * | 2016-12-29 | 2017-05-24 | 圆融光电科技股份有限公司 | Method for removing water-oxygen molecule impurities in MOCVD equipment reaction chamber |
| CN106702348B (en) * | 2016-12-29 | 2019-06-18 | 圆融光电科技股份有限公司 | The method for eliminating water oxygen molecular impurity in MOCVD device reaction chamber |
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| CN101728239A (en) | 2010-06-09 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |