CN101727013B - 在线监控光刻条件的方法 - Google Patents
在线监控光刻条件的方法 Download PDFInfo
- Publication number
- CN101727013B CN101727013B CN 200810043870 CN200810043870A CN101727013B CN 101727013 B CN101727013 B CN 101727013B CN 200810043870 CN200810043870 CN 200810043870 CN 200810043870 A CN200810043870 A CN 200810043870A CN 101727013 B CN101727013 B CN 101727013B
- Authority
- CN
- China
- Prior art keywords
- area ratio
- monitored
- area
- graph
- photoetching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000012544 monitoring process Methods 0.000 title claims abstract description 21
- 238000001259 photo etching Methods 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 6
- 230000002950 deficient Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000012360 testing method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810043870 CN101727013B (zh) | 2008-10-28 | 2008-10-28 | 在线监控光刻条件的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810043870 CN101727013B (zh) | 2008-10-28 | 2008-10-28 | 在线监控光刻条件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101727013A CN101727013A (zh) | 2010-06-09 |
CN101727013B true CN101727013B (zh) | 2013-02-13 |
Family
ID=42448058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200810043870 Active CN101727013B (zh) | 2008-10-28 | 2008-10-28 | 在线监控光刻条件的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101727013B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102856228B (zh) * | 2012-09-27 | 2018-03-30 | 上海华虹宏力半导体制造有限公司 | 一种半导体检测系统和回刻深度的测量方法 |
CN104698761B (zh) * | 2013-12-05 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 基于面积的opc模型校准方法 |
CN113296369B (zh) * | 2021-05-14 | 2022-09-23 | 长鑫存储技术有限公司 | 用于光学临近修正的图形量测方法及装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6647147B1 (en) * | 1999-07-15 | 2003-11-11 | Kabushiki Kaisha Toshiba | Method for measuring fine pattern, apparatus for measuring fine pattern, and record medium that can store therein program to measure fine pattern and can be read by using computer |
CN1601225A (zh) * | 2003-09-25 | 2005-03-30 | 株式会社东芝 | 集成电路图形检验装置和检验方法 |
-
2008
- 2008-10-28 CN CN 200810043870 patent/CN101727013B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6647147B1 (en) * | 1999-07-15 | 2003-11-11 | Kabushiki Kaisha Toshiba | Method for measuring fine pattern, apparatus for measuring fine pattern, and record medium that can store therein program to measure fine pattern and can be read by using computer |
CN1601225A (zh) * | 2003-09-25 | 2005-03-30 | 株式会社东芝 | 集成电路图形检验装置和检验方法 |
Non-Patent Citations (1)
Title |
---|
JP特开2002-203763A 2002.07.19 |
Also Published As
Publication number | Publication date |
---|---|
CN101727013A (zh) | 2010-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101685259B (zh) | 在线监控光刻条件的方法 | |
US7483560B2 (en) | Method for measuring three dimensional shape of a fine pattern | |
US8779359B2 (en) | Defect review apparatus and defect review method | |
Dai et al. | Development and characterisation of a new line width reference material | |
US20130146763A1 (en) | Image Processing Device, Charged Particle Beam Device, Charged Particle Beam Device Adjustment Sample, and Manufacturing Method Thereof | |
JP2015532733A (ja) | 埋設sem構造オーバーレイ標的を用いたovlのためのデバイス相関計測法(dcm) | |
US8013299B2 (en) | Review method and review device | |
US20090212215A1 (en) | Scanning electron microscope and method of measuring pattern dimension using the same | |
US6724005B2 (en) | Substrate defect inspection method and substrate defect inspection system | |
US11231376B2 (en) | Method for semiconductor wafer inspection and system thereof | |
JP2009222454A (ja) | パターン測定方法及びパターン測定装置 | |
JP4240066B2 (ja) | エッチングプロセス監視方法及びエッチングプロセス制御方法 | |
WO2021048082A2 (en) | Wafer alignment using multi-scanning electron microscopy | |
CN113994368A (zh) | 图像处理程序、图像处理装置以及图像处理方法 | |
CN101727013B (zh) | 在线监控光刻条件的方法 | |
US8742345B1 (en) | Method for detecting electron beam of scanning electron microscope and for detecting fine patterns | |
JP6088803B2 (ja) | 画像処理装置、自己組織化リソグラフィ技術によるパターン生成方法、及びコンピュータープログラム | |
JP5286337B2 (ja) | 半導体製造装置の管理装置、及びコンピュータプログラム | |
US9190240B2 (en) | Charged particle microscope apparatus and image acquisition method of charged particle microscope apparatus utilizing image correction based on estimated diffusion of charged particles | |
US20160313266A1 (en) | Pattern Measurement Device and Computer Program | |
TWI652446B (zh) | Image analysis device and charged particle beam device | |
US7397252B2 (en) | Measurement of critical dimension and quantification of electron beam size at real time using electron beam induced current | |
US7230239B2 (en) | Apparatus for inspecting three dimensional shape of a specimen and method of watching an etching process using the same | |
JP6492185B2 (ja) | 検査装置 | |
JP2011247603A (ja) | 荷電粒子線を用いた試料検査方法および検査装置ならびに欠陥レビュー装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140110 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140110 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |