CN101726938B - Pixel structure - Google Patents
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- CN101726938B CN101726938B CN2008101670575A CN200810167057A CN101726938B CN 101726938 B CN101726938 B CN 101726938B CN 2008101670575 A CN2008101670575 A CN 2008101670575A CN 200810167057 A CN200810167057 A CN 200810167057A CN 101726938 B CN101726938 B CN 101726938B
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Abstract
The invention relates to a pixel structure, which comprises a substrate, a scanning line, an active component, a data wire, a second dielectric layer, a through electrode, a third dielectric layer, a reflecting electrode and a shielding layer. The active component can be electrically connected with the scanning line and the data wire; furthermore, the second dielectric layer covers the active component; the through electrode is arranged on the second dielectric layer and electrically connected with the active component; the third dielectric layer covers part of the second dielectric layer, and exposes part of the through electrode; in addition, the reflecting electrode is arranged on the third dielectric layer and electrically connected with the exposed through electrode; the shielding layer of the invention is arranged between the reflecting electrode and the substrate, and the position of the shielding layer corresponds to that of a slit pattern on the reflecting electrode.
Description
Technical field
The invention relates to a kind of dot structure, and particularly relevant for a kind of dot structure of semi-penetration, semi-reflective.
Background technology
General LCD can be divided into penetration, reflective and semi-penetration, semi-reflective three major types, utilizes mode and the structural difference of active assembly array base plate and The classification basis is light source.Wherein, semi-penetrated semi-reflected liquid crystal display can utilize backlight and external light source to show simultaneously, and on its active assembly array base plate transmission area and echo area is arranged.Wherein, be formed with transparency electrode in the transmission area,, and be formed with the reflecting electrode that is suitable for the external light source reflection in the echo area in order to the light penetration that backlight provided.
In order to improve the visual angle of LCD, can form a plurality of slits on the general transparency electrode, so that liquid crystal molecule can be multi-direction arrangement, and then obtain a plurality of different orientation fields (domain).LCD just can be reached the requirement of wide viewing angle.It should be noted that in the known technology that the reflecting electrode in the echo area generally can not be formed with slit, so the echo area also can't present the display effect of wide viewing angle.In order to improve this problem, known colored optical filtering substrates can form a plurality of orientation protrusions (alignment protrusion) in the position corresponding to the echo area, so that the echo area has the display effect of wide viewing angle.Yet, only depending on the orientation protrusion on the colored optical filtering substrates, the display effect of wide viewing angle also can't effectively promote, and improved necessity is arranged in fact.
Summary of the invention
In view of this, the invention provides a kind of dot structure, it has good wide viewing angle display effect.
The present invention proposes a kind of dot structure, and it comprises a substrate, one scan line, a driving component, a data line, one second dielectric layer, a through electrode, one the 3rd dielectric layer, a reflecting electrode and a light shield layer.Wherein, sweep trace and driving component all are disposed on the substrate, and are electrically connected to each other.In addition, have first dielectric layer that extends on the substrate in the driving component, and first dielectric layer covers sweep trace.Above-mentioned data line is disposed on first dielectric layer and with driving component and electrically connects.In addition, second dielectric layer covers first dielectric layer and the data line of driving component, part.Through electrode is disposed on second dielectric layer and with driving component and electrically connects.Second dielectric layer of the 3rd above-mentioned dielectric layer cover part, and expose through electrode partly at least.In addition, reflecting electrode is disposed on the 3rd dielectric layer, and electrically connects with the through electrode that exposes.Specifically, reflecting electrode has a plurality of slit pattern.Light shield layer of the present invention is disposed between reflecting electrode and the substrate, and the position of the corresponding slit pattern in the position of light shield layer.
In one embodiment of this invention, above-mentioned light shield layer is configurable on substrate, and is identical rete with sweep trace.
In one embodiment of this invention, above-mentioned light shield layer is configurable on first dielectric layer, and is identical rete with data line.
In one embodiment of this invention, the second above-mentioned dielectric layer has a contact window, and through electrode electrically connects with driving component by contact window.
In one embodiment of this invention, above-mentioned through electrode has a plurality of slit pattern.
In one embodiment of this invention, the 3rd above-mentioned dielectric layer has a plurality of protrusions.
In one embodiment of this invention, above-mentioned driving component comprises a grid, a channel layer, an ohmic contact layer, one source pole and a drain electrode.Wherein, gate configuration is on substrate and covered by first dielectric layer.This grid electrically connects sweep trace.In addition, channel layer is disposed on first dielectric layer of grid top, and ohmic contact layer is disposed on the channel layer.In addition, ohmic contact layer is between source electrode and the channel layer and between drain electrode and channel layer.Source electrode of the present invention electrically connects data line, and drain electrode electrically connects through electrode.
In one embodiment of this invention, above-mentioned dot structure also comprises a patterned shared wiring, and it is disposed on the substrate, and the first dielectric layer overlay pattern shared wiring.
In one embodiment of this invention, the material of above-mentioned through electrode can comprise indium tin oxide, indium-zinc oxide or aluminium zinc oxide.
In one embodiment of this invention, the material of above-mentioned reflecting electrode can comprise the high-reflectivity metal material.
Because reflecting electrode of the present invention has slit pattern, therefore can significantly promote the display effect of wide viewing angle.Because light shield layer of the present invention is disposed between reflecting electrode and the substrate, and the position of the corresponding slit pattern in the position of light shield layer.Therefore, the light that backlight sent can be stopped by the light shield layer of slit pattern below, can't cause bad influence to demonstration.Therefore, the dot structure of semi-penetration, semi-reflective of the present invention can have good wide viewing angle display effect.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 is the top view of the dot structure of one embodiment of the invention;
Fig. 2 is the sectional view of the dot structure of one embodiment of the invention;
Fig. 3 is the sectional view of another dot structure of the present invention.
[primary clustering symbol description]
100,100 ': dot structure 102: substrate
110: sweep trace 112: patterned shared wiring
120: driving component 120g: grid
120s: source electrode 120d: drain electrode
120c: channel layer 120m: ohmic contact layer
120i: first dielectric layer 130: data line
180: light shield layer C: contact window
P: protrusion S: slit pattern
Embodiment
Fig. 1 is the top view of the dot structure of one embodiment of the invention, and Fig. 2 is the sectional view of the dot structure of one embodiment of the invention.For illustrated simple and clear, omitted illustrating of first dielectric layer, second dielectric layer and the 3rd dielectric layer among Fig. 1, but these retes can be known and see among Fig. 2.Please also refer to Fig. 1 and Fig. 2, dot structure 100 of the present invention comprises a substrate 102, one scan line 110, a driving component 120, a data line 130, one second dielectric layer 140, a through electrode 150, one the 3rd dielectric layer 160, a reflecting electrode 170 and a light shield layer 180.
As shown in Figure 2, the driving component 120 that is positioned on the substrate 102 can comprise a grid 120g, one first dielectric layer 120i, a channel layer 120c, an ohmic contact layer 120m, one source pole 120s and a drain electrode 120d.Wherein, grid 120g is disposed on the substrate 102 and covered by the first dielectric layer 120i.In addition, channel layer 120c is disposed on the first dielectric layer 120i of grid 120g top, and ohmic contact layer 120m is disposed on the channel layer 120c.In order to reduce the contact impedance between semiconductor material and the metal material, can dispose ohmic contact layer 120m between source electrode 120s and the channel layer 120c and between drain electrode 120d and the channel layer 120c.Here be noted that driving component 120 of the present invention is the thin film transistor (TFT) of bottom-gate (bottom gate) structure, only painstakingly do not limit in order to explanation at this.Certainly, driving component 120 also can be that two-carrier transistor or other have the driving component of three terminals.
As shown in Figure 1, the grid 120g of driving component 120 can electrically connect with sweep trace 110, and source electrode 120s can electrically connect with data line 130.Certainly, have in the affiliated technical field and know that usually the knowledgeable should know that grid 120g can be the extension of sweep trace 110 or the layout of other shape (lay out), is not limited at this.Generally speaking, dot structure 100 more can comprise a patterned shared wiring 112.Sweep trace 110 all is disposed on the substrate 102 with patterned shared wiring 112, and patterned shared wiring 112 can be electrically connected to piezoelectricity pressure (commonvoltage) (not illustrating) altogether.Here be noted that the visual practice demand of layout (lay out) of the patterned shared wiring 112 shown in Fig. 1 and change that layout shown in Figure 1 is only in order to explanation, at this and be not intended to limitation.
In addition, second dielectric layer 140 shown in Figure 2 covers driving component 120, the first dielectric layer 120i partly.The material of second dielectric layer 140 for example is silicon nitride (SiN) or is the monox (SiO) that reacting gas source forms with tetraethoxysilane (TEOS).This second dielectric layer 140 has a contact window C, and the drain electrode 120d membership of driving component 120 contact window C and electrically connecting with through electrode 150 on second dielectric layer 140 thus.The material of this through electrode 150 is a transparent conductive material, and it is indium tin oxide, indium-zinc oxide or aluminium zinc oxide for example.On the practice, switching signal can see through the transmission of sweep trace 110 among Fig. 1 and driving component 120 is opened, and driving component 120 is opened the back shows signal and can and be passed in the through electrode 150 through data line 130.
As shown in Figure 2, second dielectric layer 140 of the 3rd dielectric layer 160 meeting cover parts, and the 3rd dielectric layer 160 can expose most through electrode 150.The material of this 3rd dielectric layer 160 for example is an organic material, as polyimide (polyimide).In one embodiment, the 3rd dielectric layer 160 can be formed with a plurality of protrusion P.Thus, be covered in reflecting electrode 170 on the 3rd dielectric layer 160 and just can present wavyly, and then can promote the effect of the extraneous light of scattering.The material of this reflecting electrode 170 can adopt the high-reflectivity metal material, for example is aluminium.On the other hand, the reflecting electrode 170 that is covered on the 3rd dielectric layer 160 can electrically connect with the through electrode 150 that exposes.
Specifically, reflecting electrode 170 can be formed with a plurality of slit pattern S.This can make corresponding to the liquid crystal molecule on the reflecting electrode 170 (not illustrating) can be multi-direction arrangement, to reach the display effect of wide viewing angle.In addition, as shown in Figure 1, also can be formed with slit pattern S on the through electrode 150.Certainly, have in the affiliated technical field and know that usually the knowledgeable should know the visual demand of shape of slit pattern S among Fig. 1 and changes, in this limitation painstakingly.
It should be noted that as shown in Figure 2 light shield layer 180 of the present invention can be disposed between reflecting electrode 170 and the substrate 102, and the position of the corresponding slit pattern S in the position of light shield layer 180.In one embodiment, light shield layer of the present invention 180 is configurable on substrate 102, and is covered by the first dielectric layer 120i.This light shield layer 180 can be by form processing procedure that need not be extra in the lump with the light shield processing procedure with sweep trace 110.Because the position of light shield layer 180 is corresponding to the position of slit pattern S on the reflecting electrode 170, so can the be reflected light shield layer 180 of electrode 170 belows of the light that sent of backlight (not illustrating) stops, can't cause bad influence to demonstration.
Certainly, light shield layer 180 also can be formed on other rete, as shown in Figure 3.Light shield layer 180 of the present invention can be formed on the first dielectric layer 120i, and is identical rete with data line 130.This light shield layer 180 can be by forming in the lump with the light shield processing procedure with source electrode 120s, drain electrode 120d and data line 130.This dot structure 100 ' has identical effect with dot structure 100 shown in Figure 2.
In sum,, therefore can significantly promote the display effect of wide viewing angle because reflecting electrode of the present invention has slit pattern, and the light shield layer of the reflecting electrode below light that can effectively stop backlight and sent.Therefore, dot structure of the present invention has the good wide viewing angle display effect and the display effect of semi-penetration, semi-reflective concurrently.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (9)
1. a dot structure is characterized in that, comprising:
One substrate;
The one scan line is disposed on this substrate;
One driving component is disposed on this substrate and electrically connects this sweep trace, have first dielectric layer that extends on this substrate in this driving component, and this first dielectric layer covers this sweep trace;
One data line is disposed on this first dielectric layer and electrically connects with this driving component;
One second dielectric layer has a contact window, covers this first dielectric layer and this data line of this driving component, part;
One through electrode is disposed on this second dielectric layer, electrically connects with this driving component by this contact window;
One the 3rd dielectric layer, this of cover part second dielectric layer, and expose this through electrode partly;
One reflecting electrode is disposed on the 3rd dielectric layer and electrically connects with this through electrode that exposes, and wherein this reflecting electrode has a plurality of slit pattern; And
One light shield layer is disposed between this reflecting electrode and this substrate, and the position of corresponding those slit pattern in the position of this light shield layer.
2. dot structure as claimed in claim 1 is characterized in that this light shield layer is disposed on this substrate, and is identical rete with this sweep trace.
3. dot structure as claimed in claim 1 is characterized in that, this light shield layer is disposed on this first dielectric layer, and is identical rete with this data line.
4. dot structure as claimed in claim 1 is characterized in that this through electrode has a plurality of slit pattern.
5. dot structure as claimed in claim 1 is characterized in that the 3rd dielectric layer has a plurality of protrusions.
6. dot structure as claimed in claim 1 is characterized in that, this driving component comprises:
One grid is disposed on this substrate and this first dielectric layer covers this grid, and this grid electrically connects this sweep trace;
One channel layer is disposed on this first dielectric layer of this grid top;
One ohmic contact layer is disposed on this channel layer;
One source pole; And
One drain electrode, wherein this ohmic contact layer is between this source electrode and this channel layer and between this drain electrode and this channel layer, and this source electrode electrically connects this data line, this this through electrode of electric connection that drains.
7. dot structure as claimed in claim 1 is characterized in that, also comprises a patterned shared wiring, be disposed on this substrate, and this first dielectric layer covers this patterned shared wiring.
8. dot structure as claimed in claim 1 is characterized in that, the material of this through electrode comprises indium tin oxide, indium-zinc oxide or aluminium zinc oxide.
9. dot structure as claimed in claim 1 is characterized in that the material of this reflecting electrode comprises the high-reflectivity metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101670575A CN101726938B (en) | 2008-10-10 | 2008-10-10 | Pixel structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101670575A CN101726938B (en) | 2008-10-10 | 2008-10-10 | Pixel structure |
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| Publication Number | Publication Date |
|---|---|
| CN101726938A CN101726938A (en) | 2010-06-09 |
| CN101726938B true CN101726938B (en) | 2011-06-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101670575A Active CN101726938B (en) | 2008-10-10 | 2008-10-10 | Pixel structure |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021163975A1 (en) * | 2020-02-20 | 2021-08-26 | 京东方科技集团股份有限公司 | Display panel and driving method thereof, and display device |
| TWI753788B (en) * | 2021-02-26 | 2022-01-21 | 友達光電股份有限公司 | Pixel structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1251389A2 (en) * | 2001-04-16 | 2002-10-23 | Nec Corporation | Color liquid-crystal panel and method for manufacturing the same |
| JP2003057638A (en) * | 2001-08-22 | 2003-02-26 | Nec Corp | Liquid crystal display device |
| CN1544979A (en) * | 2003-11-26 | 2004-11-10 | 友达光电股份有限公司 | Thin film transistor liquid crystal display with locality multi-domain perpendicular direction matching mode |
-
2008
- 2008-10-10 CN CN2008101670575A patent/CN101726938B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1251389A2 (en) * | 2001-04-16 | 2002-10-23 | Nec Corporation | Color liquid-crystal panel and method for manufacturing the same |
| JP2003057638A (en) * | 2001-08-22 | 2003-02-26 | Nec Corp | Liquid crystal display device |
| CN1544979A (en) * | 2003-11-26 | 2004-11-10 | 友达光电股份有限公司 | Thin film transistor liquid crystal display with locality multi-domain perpendicular direction matching mode |
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| Publication number | Publication date |
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| CN101726938A (en) | 2010-06-09 |
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Effective date of registration: 20230510 Address after: No. two, No. 1188 West Ring Road, Shengze Town, Wujiang District, Jiangsu, Suzhou Patentee after: Suzhou Shengze science and Technology Pioneer Park Development Co.,Ltd. Address before: 215217, No. 88, Tung Hing Road, Tongli District, Wujiang Economic Development Zone, Suzhou, Jiangsu Patentee before: CPTW (WUJIANG) Co.,Ltd. Patentee before: Chunghwa Picture Tubes, Ltd. |