CN101726875A - Bonding pad structure, active component array substrate and liquid crystal display panel - Google Patents
Bonding pad structure, active component array substrate and liquid crystal display panel Download PDFInfo
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- CN101726875A CN101726875A CN200810167542A CN200810167542A CN101726875A CN 101726875 A CN101726875 A CN 101726875A CN 200810167542 A CN200810167542 A CN 200810167542A CN 200810167542 A CN200810167542 A CN 200810167542A CN 101726875 A CN101726875 A CN 101726875A
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- bonding pad
- pad structure
- metal pattern
- contact window
- transparency conducting
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Abstract
The invention discloses a bonding pad structure, which comprises a metal layer, a grid insulation layer, a protective layer and a transparent conductive layer. The metal layer is provided with a first metal pattern and a second metal pattern which are separated; the grid insulation layer covers the metal layer; and the protective layer covers the grid insulation layer; the grid insulation layer and the protective layer are provided with a first contact window opening and a second contact window opening which expose a part of the first metal pattern and a part of the second metal pattern respectively; the transparent conductive layer covers the protective layer and is filled into the first and second contact window openings; and the transparent conductive layer positioned on the second contact window opening serves as a detection probe contact area. The invention also provides an active component array substrate with the bonding pad structure.
Description
Technical field
The invention relates to a kind of bonding pad structure (bonding pad) and active assembly array substrate and display panels with this bonding pad structure, and particularly relevant for a kind of active assembly array substrate and display panels that can improve the bonding pad structure of the bad recall rate of connection pad impedance and have this bonding pad structure.
Background technology
LCD is assembled by a display panels (LCD panel) and a module backlight (back light module).Display panels is by comprising thin film transistor (TFT) array (TFT array) substrate, colored optical filtering substrates (color filter substrate, CFsubstrate) and the liquid crystal layer that is positioned between the two form, wherein on thin-film transistor array base-plate, comprised assemblies such as thin film transistor (TFT), sweep trace (scan line), data line (data line) and pixel electrode.Particularly, the end of data line and sweep trace can electrically connect with bonding pad structure, will electrically connect with drive unit and bonding pad structure is follow-up, so that the signal of drive unit is conducted to display panels.
Generally speaking, after thin-film transistor array base-plate completes, can carry out electrical detection to the assembly on this substrate.In addition, upright when thin-film transistor array base-plate and colored optical filtering substrates group with after constituting display panels, also can carry out electrical detection to this display panels.And above-mentioned trace routine all is to utilize the bonding pad structure of data line and sweep trace end to carry out electrical detection.
It is as follows that tradition utilizes bonding pad structure to carry out the mode of electrical detection.Figure 1A is the top view of traditional bonding pad structure, and Figure 1B is the diagrammatic cross-section of the bonding pad structure that illustrates of Figure 1A.Please refer to Figure 1A and Figure 1B, bonding pad structure 100 is to electrically connect with data line or sweep trace 102a.Bonding pad structure 100 comprises metal level 102, gate insulation layer 104 and indium tin oxide (ITO) layer 106.Metal level 102 is connected with data line or sweep trace 102a.Gate insulation layer 104 is positioned on the metal level 102, and has the opening 103 that exposes metal level 102.I TO layer 106 is formed on the gate insulation layer 104, and it electrically contacts with metal level 102 via opening 103.
In the time will carrying out electrical detection, generally be to utilize the directly ITO layer 106 of contact bonding pad structure 100 of probe 110, be input to data line or sweep trace 102a so that signal is seen through probe 110, and then detect on the substrate or whether defectiveness or the damage of the circuit in the panel or assembly.And if when causing contact impedance excessive when between ITO layer 106 and the metal level 102 loose contact being arranged, it is unusual that above-mentioned trace routine also can detect impedance.
But, if cause having pierced through ITO layer 106 and when directly contacting with metal level 102, the signal of probe 110 will directly be passed on beneath metal level 102 when probe 110 control is improper.Thus, if when the excessive situation of contact impedance is arranged between ITO layer 106 and the metal level 102, can't learn by this trace routine.Thus, the user's ITO layer 106 that can't discover bonding pad structure has unusual contact impedance with metal level 102.
Summary of the invention
The purpose of this invention is to provide a kind of bonding pad structure, may have and to discover the problem that unusual contact impedance is arranged to solve traditional bonding pad structure.
Another object of the present invention provides a kind of active assembly array substrate, and it has above-mentioned bonding pad structure.
For reaching above-mentioned or other purpose, the present invention proposes a kind of bonding pad structure, and it comprises metal level, gate insulation layer, protective seam and transparency conducting layer.Metal level has first metal pattern and second metal pattern, and wherein first metal pattern and second metal pattern are separated.Gate insulation layer covers metal level, and protective seam covering gate insulation course.Have first contact window and second contact window in gate insulation layer and the protective seam, it exposes first metal pattern of part and second metal pattern of part respectively.Transparency conducting layer covers on the protective seam, and inserts first contact window and second contact window, and the transparency conducting layer that wherein is positioned on second contact window is as the detector probe contact region.
The present invention proposes a kind of bonding pad structure, and it comprises metal level, gate insulation layer, protective seam and transparency conducting layer.Metal level is positioned on the gate insulation layer, and metal level has one first metal pattern and one second metal pattern, and wherein first metal pattern and second metal pattern are separated.Protective seam covers metal level, wherein has one first contact window and one second contact window in the protective seam, and it exposes first metal pattern of part and second metal pattern of part respectively.Transparency conducting layer covers on the protective seam, and inserts first contact window and second contact window, and the transparency conducting layer that wherein is positioned on second contact window is as a detector probe contact region.
The present invention proposes a kind of active assembly array substrate, and it has viewing area and non-display area.This active assembly array substrate comprises a plurality of pixels, a plurality of first and second bonding pad structure.Pixel is to be arranged in the viewing area, and each pixel comprises data line, sweep trace, driving component and pixel electrode.First bonding pad structure is to be arranged in the non-display area, and each first bonding pad structure and wherein sweep trace electric connection.Second bonding pad structure is to be arranged in the non-display area, and each second bonding pad structure and wherein data line electric connection.Particularly, each first and second bonding pad structure is respectively as above-mentioned two sections described bonding pad structures.
In one embodiment of this invention, the material of above-mentioned transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
In one embodiment of this invention, above-mentioned active assembly array substrate more comprises at least one first drive unit, is arranged on non-display area, and first drive unit and the electric connection of first bonding pad structure; And at least one second drive unit, be arranged on non-display area, and second drive unit and the electric connection of second bonding pad structure.
In one embodiment of this invention, above-mentioned active assembly array substrate more comprises anisotropic conductive, be arranged between first drive unit and first bonding pad structure, and between second drive unit and second bonding pad structure.
First and second metal pattern that the metal level reason of bonding pad structure proposed by the invention is separated constitutes.Therefore, when carrying out electrical detection, even detector probe has pierced through transparency conducting layer and directly contacted with second metal pattern of metal level, the signal of probe still must just can be transmitted to first metal pattern of metal level via transparency conducting layer.Thereby whether the design of this kind bonding pad structure can detect when probe in detecting unusual contact impedance between metal level and the transparency conducting layer.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A is the top view of traditional bonding pad structure.
Figure 1B is the diagrammatic cross-section of the bonding pad structure that illustrates of Figure 1A.
Fig. 2 is for looking synoptic diagram on the active assembly array substrate according to an embodiment of the invention.
Fig. 3 A is for looking synoptic diagram on first bonding pad structure 212 among Fig. 2.
The diagrammatic cross-section of first bonding pad structure 212 that Fig. 3 B is illustrated for Fig. 3 A.
Fig. 4 A is for looking synoptic diagram on second bonding pad structure 214 among Fig. 2.
The diagrammatic cross-section of second bonding pad structure 214 that Fig. 4 B is illustrated for Fig. 4 A.
Fig. 5 is the diagrammatic cross-section of display panels.
Fig. 6 for drive unit be engaged to display panels on look synoptic diagram.
[primary clustering symbol description]
100: bonding pad structure 102a: data line or sweep trace
102: metal level 103: contact window
104: gate insulation layer 106:ITO layer
110: probe 200: substrate
202: non-display area 204: viewing area
206: pixel 208: driving component
210: pixel electrode 212,214: bonding pad structure
220a, 220b: metal level 222a, 222b: first metal pattern
224a, 224b: second metal pattern 226: gate insulation layer
227: protective seam 228a, 228b: first contact window
230a, 230b: the second contact window 232a, 232b: transparency conducting layer
250: probe 260,270: drive unit
265: anisotropic conductive 400: active assembly array substrate
500: subtend substrate 600: liquid crystal layer
SL: sweep trace DL: data line
Embodiment
Fig. 2 is for looking synoptic diagram on the active assembly array substrate according to an embodiment of the invention.Please refer to Fig. 2, active assembly array substrate is to form many assemblies and lead or the like member to form on substrate 200, and it has comprised viewing area 204 and non-display area 202.Be to have disposed a plurality of pixels 206 in viewing area 204, and each pixel 206 comprise data line DL, sweep trace SL, driving component 208 and pixel electrode 210.In the present embodiment, driving component 208 is a thin film transistor (TFT), and it has grid, source electrode and drain electrode, and grid and sweep trace SL electrically connect, and source electrode and data line DL electrically connect, and drain electrode electrically connects with pixel electrode 210.
Then be to dispose first bonding pad structure 212 and second bonding pad structure 214 in non-display area 202.Each first bonding pad structure, 212 meeting and wherein sweep trace SL electric connection, and each second bonding pad structure, 214 meeting and wherein data line DL electric connection.In other words, sweep trace SL extends to non-display area 202 and can electrically connect with first bonding pad structure 212, and data line DL extends to non-display area 202 meetings and 214 electric connections of second bonding pad structure.First and second bonding pad structure 212,214 follow-up be to be used for engaging with drive unit so that the signal of drive unit can input data line DL and sweep trace SL, to drive the pixel 206 in the viewing area 204.
And before joining drive unit to bonding pad structure, can utilize this bonding pad structure to come the pixel in the viewing area 204 is carried out testing electrical property usually.Therefore, the present invention has done special design to first and second bonding pad structure 212,214, when avoiding tradition to use bonding pad structure to carry out electrical detection, may have and can't discover the problem that bonding pad structure itself has unusual contact impedance.Be described in detail as follows:
Fig. 3 A is for looking synoptic diagram, the diagrammatic cross-section of first bonding pad structure 212 that Fig. 3 B is illustrated for Fig. 3 A on first bonding pad structure 212 among Fig. 2.Please refer to Fig. 3 A and Fig. 3 B, first bonding pad structure 212 that electrically connects with sweep trace SL comprises metal level 220a, gate insulation layer 226 and the transparency conducting layer 232a that is arranged on the substrate 200.
Metal level 220a has the first metal pattern 222a and the second metal pattern 224a, and wherein the first metal pattern 222a and the second metal pattern 224a separate.Metal level 220a is to form with production process with sweep trace SL.
Transparency conducting layer 232a covers on the protective seam 227, and inserts the first contact window 228a and the second contact window 230a.And the transparency conducting layer 232a that is positioned on the second contact window 230a is as the detector probe contact region.The material of transparency conducting layer 232a for example is indium tin oxide or indium-zinc oxide an or the like transparent metal oxide.
When using probe 250 to carry out electrical detection, be with the transparency conducting layer 232a (detector probe contact region) on the probe 250 direct contact second contact window 230a, and then signal is conducted to sweep trace SL, so that the pixel in the viewing area is carried out electrical detection.And this moment, if probe 250 has pierced through transparency conducting layer 232a accidentally and has directly contacted with the second metal pattern 224a, because first and second metal pattern 222a, 224a separate, thereby still must be from transparency conducting layer 232a and the transparency conducting layer 232a first contact window 228a in and reach first metal pattern 222a then just conduct to sweep trace SL of the second metal pattern 224a in the second contact window 230a from the signal of probe 250.In other words, this kind bonding pad structure can make the signal of probe 250 just to conduct through transparency conducting layer 232a and cause sweep trace SL.Therefore, even probe 250 has pierced through transparency conducting layer 232a accidentally and directly contacted with the second metal pattern 224a, can detect still between the transparency conducting layer 232a and the first metal pattern 222a whether unusual contact impedance is arranged.
Fig. 4 A is for looking synoptic diagram, the diagrammatic cross-section of second bonding pad structure 214 that Fig. 4 B is illustrated for Fig. 4 A on second bonding pad structure 214 among Fig. 2.Please refer to Fig. 4 A and Fig. 4 B, second bonding pad structure 214 that electrically connects with data line DL comprises gate insulation layer 226, metal level 220b, protective seam 227 and the transparency conducting layer 232b that is arranged on the substrate 200.
Transparency conducting layer 232b covers on the protective seam 227, and inserts the first contact window 228b and the second contact window 230b.And the transparency conducting layer 232b that is positioned on the second contact window 230b is as the detector probe contact region.The material of transparency conducting layer 232b for example is a transparent conductive material, for example is indium tin oxide indium-zinc oxide or the like transparent metal oxide.
When using probe 250 to carry out electrical detection, be with the transparency conducting layer 232b (detector probe contact region) on the probe 250 direct contact second contact window 230b, and then signal is conducted to data line DL, so that the pixel in the viewing area is carried out electrical detection.And this moment, if probe 250 has pierced through transparency conducting layer 232b accidentally and has directly contacted with the second metal pattern 224b, because first and second metal pattern 222b, 224a separate, thus from the signal of probe 250 still must from the second metal pattern 224b in the second contact window 230b transparency conducting layer 232b and the transparency conducting layer 232b in the first contact window 228b and reach the first metal pattern 222b then just conduction cause data line DL.In other words, this kind bonding pad structure can make the signal of probe 250 just to conduct through transparency conducting layer 232b and cause data line DL.Therefore, even probe 250 has pierced through transparency conducting layer 232b accidentally and directly contacted with the second metal pattern 224a, can detect still between the transparency conducting layer 232b and the first metal pattern 222b whether unusual contact impedance is arranged.
Above-mentioned probe in detecting program is to carry out on active assembly array substrate, therefore is called the active assembly array substrate trace routine again.And after finishing the active assembly array substrate trace routine, as do not have unusual problem, just can active assembly array substrate and subtend substrate in batch is upright, and inject liquid crystal, to form display panels.Be described in detail as follows:
Please refer to Fig. 5, at first, active assembly array substrate 400 and subtend substrate are stood in together for 500 groups, and between active assembly array substrate 400 and subtend substrate 500, inject liquid crystal layer 600.Active assembly array substrate 400 promptly is a structure as shown in Figure 2.Subtend substrate 500 for example is to comprise disposing electrode layer and chromatic filter layer.
And after finishing display panels shown in Figure 5, can utilize the bonding pad structure on the active assembly array substrate 400 to carry out electrical detection at this moment once more.In the trace routine that this carried out is formed after panel sets is upright, therefore is called the panel detection program again.
After above-mentioned panel detection program is finished, confirmed that the assembly on the panel all after the compliant, just can join drive unit on the bonding pad structure to.Fig. 6 for drive unit be engaged to display panels on look synoptic diagram.Please refer to Fig. 6, after the group of the display panels of finishing Fig. 5 is upright, just first drive unit 260 and second drive unit 270 can be engaged on the active assembly array substrate 400, and first drive unit 260 can electrically connect with first bonding pad structure on the active assembly array substrate 400, and second drive unit 270 can electrically connect with second bonding pad structure on the active assembly array substrate 400.In one embodiment, the method that drive unit 260,270 is engaged to active assembly array substrate 400 for example is between drive unit 260,270 and bonding pad structure anisotropic conductive 265 to be set, carry out hot pressing then and program, so that drive unit 260,270 is attached on the active assembly array substrate 400, and the bonding pad structure on drive unit 260,270 and the active assembly array substrate 400 is electrically connected.
Comprehensive the above, the metal level of bonding pad structure proposed by the invention is because of having first and second metal pattern of separation.Therefore, when carrying out electrical detection, even detector probe has pierced through transparency conducting layer and directly contacted with second metal pattern of metal level, the signal of probe still must just can be transmitted to first metal pattern of metal level via transparency conducting layer.Thereby whether the design of this kind bonding pad structure can detect when probe in detecting unusual contact impedance between metal level and the transparency conducting layer.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (9)
1. a bonding pad structure is characterized in that, comprising:
One metal level, it has one first metal pattern and one second metal pattern, and wherein this first metal pattern and this second metal pattern are separated;
One gate insulation layer covers this metal level;
One protective seam covers this gate insulation layer, wherein has one first contact window and one second contact window in this gate insulation layer and this protective seam, and it exposes this first metal pattern of part and this second metal pattern of part respectively; And
One transparency conducting layer covers on this protective seam, and inserts this first contact window and this second contact window, and this transparency conducting layer that wherein is positioned on this second contact window is as a detector probe contact region.
2. bonding pad structure as claimed in claim 1 is characterized in that the material of this transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
3. a bonding pad structure is characterized in that, comprising:
One gate insulation layer;
One metal level is positioned on this gate insulation layer, and this metal level has one first metal pattern and one second metal pattern, and wherein this first metal pattern and this second metal pattern are separated;
One protective seam covers this metal level, wherein has one first contact window and one second contact window in this protective seam, and it exposes this first metal pattern of part and this second metal pattern of part respectively; And
One transparency conducting layer covers on this protective seam, and inserts this first contact window and this second contact window, and this transparency conducting layer that wherein is positioned on this second contact window is as a detector probe contact region.
4. bonding pad structure as claimed in claim 3 is characterized in that the material of this transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
5. active assembly array substrate, it has a viewing area and a non-display area, it is characterized in that, comprising:
A plurality of pixels are arranged in this viewing area, and wherein each pixel comprises a data line, one scan line, a driving component and a pixel electrode;
A plurality of first bonding pad structures are arranged in this non-display area, and each first bonding pad structure and wherein one scan line electric connection;
A plurality of second bonding pad structures are arranged in this non-display area, and each second bonding pad structure and wherein data line electric connection,
Wherein each those first bonding pad structure according to claim 1.
6. active assembly array substrate as claimed in claim 5 is characterized in that, each those second bonding pad structure is as described in the claim 3.
7. active assembly array substrate as claimed in claim 5 is characterized in that, also comprises:
At least one first drive unit is arranged on this non-display area, and this first drive unit and the electric connection of those first bonding pad structures; And
At least one second drive unit is arranged on this non-display area, and this second drive unit and the electric connection of those second bonding pad structures.
8. active assembly array substrate as claimed in claim 6 is characterized in that, also comprises an anisotropic conductive, be arranged between this first drive unit and those first bonding pad structures, and between this second drive unit and those second bonding pad structures.
9. active assembly array substrate as claimed in claim 5 is characterized in that the material of this transparency conducting layer comprises indium tin oxide or indium-zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810167542A CN101726875A (en) | 2008-10-10 | 2008-10-10 | Bonding pad structure, active component array substrate and liquid crystal display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810167542A CN101726875A (en) | 2008-10-10 | 2008-10-10 | Bonding pad structure, active component array substrate and liquid crystal display panel |
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| CN101726875A true CN101726875A (en) | 2010-06-09 |
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| CN200810167542A Pending CN101726875A (en) | 2008-10-10 | 2008-10-10 | Bonding pad structure, active component array substrate and liquid crystal display panel |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103809103A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Chip failpoint positioning method |
| CN104880877A (en) * | 2015-06-18 | 2015-09-02 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, testing method thereof |
| CN109003566A (en) * | 2018-06-19 | 2018-12-14 | 南京中电熊猫液晶显示科技有限公司 | A kind of detection device and its detection method of display panel |
| WO2019200912A1 (en) * | 2018-04-17 | 2019-10-24 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, and display device |
| CN112230483A (en) * | 2020-09-23 | 2021-01-15 | 惠科股份有限公司 | Array substrate, display panel and large glass panel |
-
2008
- 2008-10-10 CN CN200810167542A patent/CN101726875A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103809103A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Chip failpoint positioning method |
| CN103809103B (en) * | 2012-11-08 | 2017-02-08 | 中芯国际集成电路制造(上海)有限公司 | Chip failpoint positioning method |
| CN104880877A (en) * | 2015-06-18 | 2015-09-02 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, testing method thereof |
| WO2019200912A1 (en) * | 2018-04-17 | 2019-10-24 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, and display device |
| CN109003566A (en) * | 2018-06-19 | 2018-12-14 | 南京中电熊猫液晶显示科技有限公司 | A kind of detection device and its detection method of display panel |
| CN109003566B (en) * | 2018-06-19 | 2021-07-13 | 南京中电熊猫液晶显示科技有限公司 | Detection device and detection method for display panel |
| CN112230483A (en) * | 2020-09-23 | 2021-01-15 | 惠科股份有限公司 | Array substrate, display panel and large glass panel |
| CN112230483B (en) * | 2020-09-23 | 2021-10-01 | 惠科股份有限公司 | Array substrate, display panel and large glass panel |
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Application publication date: 20100609 |