CN107219701A - Array base palte and display device - Google Patents
Array base palte and display device Download PDFInfo
- Publication number
- CN107219701A CN107219701A CN201710516192.5A CN201710516192A CN107219701A CN 107219701 A CN107219701 A CN 107219701A CN 201710516192 A CN201710516192 A CN 201710516192A CN 107219701 A CN107219701 A CN 107219701A
- Authority
- CN
- China
- Prior art keywords
- electrode
- gate
- type transistor
- base palte
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
Abstract
The present invention provides a kind of array base palte and display device, belongs to display technology field, and array base palte of the invention includes substrate, the detection components in substrate, for providing detection signal for signal wire；Detection components include：Detect pad and bottom-gate-type transistor；Wherein, pad is detected, for receiving detection signal；First pole connecting detection pad of bottom-gate-type transistor, the second pole connection signal wire, control pole connection control signal end.Due to being additionally arranged bottom-gate-type transistor in the detection components of the array base palte of the present invention, therefore, when needing array substrate to carry out lighting test, by control signal bottom-gate-type transistor can be controlled to open, so that signal wire is connected with detection pad, so as to be convenient to carry out lighting test；After lighting test is completed, by control signal bottom-gate-type transistor can be controlled to close, so that signal wire disconnects with detection pad, so as to avoid signal wire from producing electromagnetic interference to other signals by detecting pad to carry out electromagnetic radiation.
Description
Technical field
The invention belongs to display technology field, and in particular to a kind of array base palte and display device.
Background technology
With the development of optical technology and semiconductor technology, with liquid crystal display (Liquid Crystal Display,
LCD) flat-panel monitor for representative has that frivolous, energy consumption is low, reaction speed is fast, excitation is good and the features such as high contrast,
Leading position is occupied in display field.Display device presents high integration in the last few years and the development of low cost becomes
Gesture.With array base palte row driving (Gate Driver on Array, GOA) technology for representative, using GOA technologies by raster data model
Circuit is integrated in the neighboring area of array base palte, can while narrow frame design is realized, effective lifting module process yields,
Lift product yield and cost-effective.
The signal lead of GOA structures is extracted from DP (Data Pad, data wire pad) side of display panel.
During lighting test (ET tests), in order to light display panel using external signal, ITO pad (Indium can be passed through
Tin Oxide pad, tin indium oxide pad) test signal is provided to the signal wire of GOA structures, the ITO pad are ET pad
(lighting pad).Fig. 1 show existing ITO pad plan and A-A directions sectional view, its structure can for example include according to
Secondary signal wire 20, insulating barrier 102 and the ITO103 for being arranged on the top of substrate 101, and ITO103 passes through via and signal wire 20
Electrical connection.Because ITO103 is exposed outside, therefore under module state, signal wire 20 can outwards produce electromagnetism spoke by ET pad
Penetrate.If the position of Touch (touch-control) touch points signal lead and ET pad radiation position are close or overlapping, then will
Electromagnetic coupled is produced, so as to cause touching signals to report an error.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, there is provided a kind of array base palte and display
Device, lighting test is carried out to array substrate.
It is a kind of array base palte to solve the technical scheme that is used of present invention problem, including substrate, positioned at the base
Detection components on bottom, for providing detection signal for signal wire；The detection components include：Detect pad and bottom gate type crystal
Pipe；Wherein,
Pad is detected, for receiving the detection signal；
First pole of the bottom-gate-type transistor connects the detection pad, and the second pole connects the signal wire, control pole
Connection control signal end.
It may further be preferable that the detection pad includes being successively set on first electrode above the substrate, first
Interlayer insulating film, second electrode；The second electrode passes through the first via through first interlayer insulating film and described the
One electrode is connected；Wherein,
The first electrode is also connected with the first pole of the bottom-gate-type transistor；The second electrode is used to receive described
Detect signal.
It may further be preferable that the detection components also include connection unit；The connection unit includes being successively set on
The 3rd electrode, the second interlayer insulating film, the 4th electrode above the substrate；4th electrode passes through through the second layer
Between the second via of insulating barrier be connected with the 3rd electrode；Wherein,
Electrode of 3rd electrode also with the bottom-gate-type transistor is connected；4th electrode also with the signal
Line is connected.
It may further be preferable that the first electrode, the 3rd electrode, with the first pole of the bottom-gate-type transistor and
Second extremely with layer setting and material is identical.
It may further be preferable that the 4th electrode is identical with the second electrode material.
It may further be preferable that the material of the first electrode and the 3rd electrode is tin indium oxide.
It may further be preferable that first interlayer insulating film and second interlayer insulating film are set with layer, and material
It is identical.
It may further be preferable that the control pole of the signal wire and the bottom-gate-type transistor is set with layer, and material phase
Together.
The technical scheme that solution present invention problem is used is a kind of display device, and it includes above-mentioned array base
Plate.
The present invention has the advantages that：
Due to being additionally arranged bottom-gate-type transistor in the detection components of the array base palte of the present invention, therefore, needing to be poised for battle
When row substrate carries out lighting test, by control signal bottom-gate-type transistor can be controlled to open, so that signal wire and detection pad
Connection, so as to be convenient to carry out lighting test；Moreover, after lighting test is completed, bottom gate can be controlled by control signal
Transistor npn npn is closed, so that signal wire disconnects with detection pad, so as to avoid signal wire by detecting that pad carries out electromagnetism spoke
Penetrate and electromagnetic interference is produced to other signals.
Brief description of the drawings
Fig. 1 is the schematic diagram of existing test structure；
Fig. 2 is the schematic diagram of the array base palte of embodiments of the invention 1；
Fig. 3 is Fig. 2 A-A sectional views.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1：
As shown in Fig. 2 the present embodiment provides a kind of array base palte, including substrate 101, in the substrate 101, it is used for
The detection components of detection signal are provided for signal wire 20；Detection components include：Detect pad 10 and bottom-gate-type transistor 30；Its
In, detection pad 10 is used to receive the detection signal；First pole connecting detection pad 10 of bottom-gate-type transistor 30, the second pole
Connect signal wire 20, control pole connection control signal end (not shown).The bottom-gate-type transistor 30 is used in control signal end
Under the control of the control signal inputted, it is switched on or off, to control to be between the detection pad 10 and the signal wire 20
No conducting.
Herein it should be noted that detection components are located at the fanout area of array base palte, namely non-display area.The present embodiment
In signal wire 20 can be the connecting line for being connected gate driving circuit with the grid line in array base palte viewing area, now grid
Drive circuit can also be arranged on array base palte (that is, Gate On Array).
Due to being additionally arranged bottom-gate-type transistor 30 in the detection components of the array base palte of the present embodiment, therefore, needing
Array substrate carry out lighting test when, can by control signal control bottom-gate-type transistor 30 open so that signal wire 20 with
Detection pad 10 is connected, so as to be convenient to carry out lighting test；Moreover, after lighting test is completed, can be by controlling to believe
Number control bottom-gate-type transistor 30 close so that signal wire 20 with detect pad 10 disconnect, so as to avoid signal wire 20 from passing through
Detect that pad 10 carries out electromagnetic radiation and produces electromagnetic interference to other signals.
Specifically, the transistor used in the present embodiment can be thin film transistor (TFT) or FET or other characteristics
Identity unit, due to use transistor source electrode and drain electrode can exchange under certain condition, so its source electrode, leakage
Pole is not different from the description of annexation.In the present embodiment, the source electrode for differentiation transistor and drain electrode, will wherein
One pole is referred to as the first pole, and another pole is referred to as the second pole, and grid is referred to as control pole.In addition being distinguished according to the characteristic of transistor can be by
Transistor is divided into N-type and p-type, the present embodiment to be illustrated by P-type transistor of transistor.When using P-type transistor
When, the source electrode of the first extremely P-type transistor, the drain electrode of the second extremely P-type transistor, during grid input low level, source-drain electrode is led
Logical, N-type is opposite.It is conceivable that using transistor realizes it is that those skilled in the art can not pay for N-type transistor
Go out under the premise of creative work what is readily occurred in, therefore be also in the protection domain of the present embodiment.
Because bottom-gate-type transistor 30 uses P-type transistor, therefore, in lighting test, inputted to control signal end
Low level signal, bottom-gate-type transistor 30 is opened, and the detection signal that detection pad 10 is received passes through bottom-gate-type transistor 30, letter
Number line 20 is introduced into the pixel cell of the viewing area of array base palte, to complete lighting test.In the display stage, then to control signal
Institute's input high level signal is held, bottom-gate-type transistor 30 is turned off, now the picture by signal wire 20 to the viewing area of array base palte
Plain unit write driver signal, and because bottom-gate-type transistor 30 is turned off, signal wire 20 disconnects with detection pad 10, so as to keep away
Exempt from signal wire 20 and electromagnetic interference is produced to other signals by detecting pad 10 to carry out electromagnetic radiation.
Wherein, the bottom-gate-type transistor 30 in the present embodiment uses bottom gate thin film transistor.Specifically, the bottom gate type is brilliant
Body pipe 30 includes：It is successively set on grid 31 in substrate 101, insulating barrier 32, active layer 33, planarization layer, sets with layer
Source electrode 34 and drain electrode 35.
As a kind of preferred implementation in the present embodiment, detection pad 10 includes being successively set in the substrate 101
First electrode 11, the first interlayer insulating film 13, the second electrode 12 of side；The second electrode 12 passes through through first interlayer
First via of insulating barrier 13 is connected with the first electrode 11；Wherein, first electrode 11 also with the bottom-gate-type transistor 30
Source electrode 34 connect；The second electrode 12 is used to receive the detection signal.As shown in figure 3, preferably detecting pad 10
First electrode 11 with the source electrode 34 of bottom-gate-type transistor 30 and drain electrode 35 is formed with a patterning processes, and material is identical
, it is metal alternatively.
Also shown in FIG. 3, the detection components of the array base palte in the present embodiment also include connection unit；Connection unit bag
Include the 3rd electrode 41, the second interlayer insulating film 43, the 4th electrode 42；4th electrode 42 passes through through the of the second interlayer insulating film
Two vias are connected with the 3rd electrode 41；Wherein, the 3rd electrode 41 is also connected with the drain electrode 35 of bottom-gate-type transistor；4th electrode 42
Also it is connected with signal wire 20.It is preferred that, the first electrode 11 of the 3rd electrode 41 and detection pad 10, and bottom-gate-type transistor 30
Source electrode 34 with drain electrode 35 with layer set and material is identical.The same layer of second electrode 12 of 4th electrode 42 and detection pad 10
Set and material is identical.First interlayer insulating film 13 and the second interlayer insulating film 43 are set with layer, and material is identical, namely first
The interlayer insulating film 43 of interlayer insulating film 13 and second is same layer structure.The grid 31 of signal wire 20 and bottom-gate-type transistor 30 with
The signal wire 20 is set with layer, and material is identical, is metal alternatively.
For the structure of the detection components of the array base palte that becomes apparent from the present embodiment, pass through the preparation side of following array base palte
Method is to said structure further instruction.
Step 1: in substrate 101, signal wire 20 and bottom-gate-type transistor 30 are included by a patterning processes formation
The figure of grid 31.
Step 2: in the substrate 101 for completing step one, forming insulating barrier 32.
Step 3: in the substrate 101 for completing step 2, including having for bottom-gate-type transistor 30 by patterning processes formation
The figure of active layer 33.
Step 4: in the substrate 101 for completing step 3, forming planarization layer.
Step 5: in the substrate 101 for completing step 4, the of detection pad 10 is included by the formation of patterning processes
The figure of one pole, the source electrode 34 of bottom-gate-type transistor 30, drain electrode 35, and the 3rd electrode 41 of connection unit；Wherein, detection weldering
First pole of disk 10 is connected with the source electrode 34 of bottom-gate-type transistor 30；The 3rd electrode 41 and bottom-gate-type transistor 30 of connection unit
Drain electrode 35 connect.
Step 6: in the substrate 101 for completing step 5, forming interlayer insulating film and in the corresponding position of first electrode 11
The first via is etched, the second via is etched in the corresponding position of the 3rd electrode 41.
Step 7: in the substrate 101 for completing step 6, the of detection pad 10 is included by the formation of patterning processes
The figure of 4th electrode 42 of two electrodes 12 and connection unit；Wherein, the second electrode 12 of detection pad 10 passes through the first via
It is connected with first electrode 11, the 4th electrode 42 of connection unit is connected by the second via with the 3rd electrode 41, while the 4th electricity
Pole 42 is also connected with signal wire 20；Detect that the second electrode 12 of pad 10 and the material of the 4th electrode 42 of connection unit are preferably
Tin indium oxide.
So far the preparation of the detection components of array base palte is completed.
Embodiment 2：
The present embodiment provides a kind of display device, and it includes the array base palte in embodiment 1.The display panel can include
Viewing area and neighboring area, the array base palte can be GOA substrates；Wherein, the viewing area correspondence array of the display device
The viewing area of substrate, the fanout area of the neighboring area correspondence array base palte of the display panel, that is, set the drive circuit of grid 31
Part.
The drive circuit of grid 31 can be integrated in the periphery of display panel by the present embodiment using GOA technologies, so that in reality
While existing narrow frame panel design, it can also effectively reduce the manufacturing cost of display panel, lift the process yields of display module.
On this basis, the display panel can also effectively shield electromagnetic interference, and design is simple and without additionally increasing consumptive material.
Further, the display device can also be the contact panel with touch controllable function, and the contact panel can be avoided
Signal wire 20 outwards produces electromagnetic radiation by ET pad, so as to ensure the accuracy of Touch signals.
It should be noted that the detail in the display device has been carried out in detail in corresponding array base palte
Description, is repeated no more here.
Wherein, the display device can for example include mobile phone, tablet personal computer, television set, notebook computer, digital phase
Any product or part with display function such as frame, navigator, the disclosure is to this without particular determination.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of array base palte, it is characterised in that including substrate, in the substrate, for providing detection letter for signal wire
Number detection components；The detection components include：Detect pad and bottom-gate-type transistor；Wherein,
Pad is detected, for receiving the detection signal；
First pole of the bottom-gate-type transistor connects the detection pad, and the second pole connects the signal wire, control pole connection
Control signal end.
2. array base palte according to claim 1, it is characterised in that the detection pad includes first electrode, first layer
Between insulating barrier, second electrode；The second electrode passes through the first via through first interlayer insulating film and described first
Electrode is connected；Wherein,
The first electrode is also connected with the first pole of the bottom-gate-type transistor；The second electrode is used to receive the detection
Signal.
3. array base palte according to claim 2, it is characterised in that the detection components also include connection unit；It is described
Connection unit includes the 3rd electrode, the second interlayer insulating film, the 4th electrode of side；4th electrode passes through through described second
Second via of interlayer insulating film is connected with the 3rd electrode；Wherein,
3rd electrode is also connected with the second pole of the bottom-gate-type transistor；4th electrode also connects with the signal wire
Connect.
4. array base palte according to claim 3, it is characterised in that the first electrode, the 3rd electrode, with it is described
First pole of bottom-gate-type transistor is extremely set with second with layer and material is identical.
5. array base palte according to claim 4, it is characterised in that the 4th electrode and the second electrode material phase
Together.
6. array base palte according to claim 5, it is characterised in that the material of the first electrode and the 3rd electrode
For tin indium oxide.
7. array base palte according to claim 4, it is characterised in that first interlayer insulating film and second interlayer
Insulating barrier is set with layer, and material is identical.
8. array base palte according to claim 1, it is characterised in that the control of the signal wire and the bottom-gate-type transistor
System is extremely set with layer, and material is identical.
9. a kind of display device, it is characterised in that including the array base palte any one of claim 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516192.5A CN107219701A (en) | 2017-06-29 | 2017-06-29 | Array base palte and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710516192.5A CN107219701A (en) | 2017-06-29 | 2017-06-29 | Array base palte and display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107219701A true CN107219701A (en) | 2017-09-29 |
Family
ID=59951121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710516192.5A Pending CN107219701A (en) | 2017-06-29 | 2017-06-29 | Array base palte and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107219701A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338139A (en) * | 2020-02-18 | 2020-06-26 | 合肥鑫晟光电科技有限公司 | Display substrate and display device |
| CN112435620A (en) * | 2020-11-27 | 2021-03-02 | 京东方科技集团股份有限公司 | Display panel, method for detecting display panel and electronic equipment |
| CN113448131A (en) * | 2021-06-23 | 2021-09-28 | 惠科股份有限公司 | Display panel and test method thereof |
| CN113889012A (en) * | 2021-11-17 | 2022-01-04 | 维信诺科技股份有限公司 | Display panel and display device |
| CN114296263A (en) * | 2022-01-25 | 2022-04-08 | 昆山龙腾光电股份有限公司 | Lighting test circuit, display panel and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070002901A (en) * | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device |
| CN1924657A (en) * | 2005-08-30 | 2007-03-07 | Lg.菲利浦Lcd株式会社 | Liquid crystal display panel and liquid crystal display apparatus having the same |
| CN101571655A (en) * | 2008-04-30 | 2009-11-04 | 乐金显示有限公司 | Liquid crystal display |
| US20140139509A1 (en) * | 2012-11-19 | 2014-05-22 | Samsung Display Co., Ltd. | Pad areas, display panels having the same, and flat panel display devices |
| CN106647082A (en) * | 2017-02-24 | 2017-05-10 | 武汉华星光电技术有限公司 | Circuit and method for testing gate line of array substrate |
-
2017
- 2017-06-29 CN CN201710516192.5A patent/CN107219701A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070002901A (en) * | 2005-06-30 | 2007-01-05 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display device |
| CN1924657A (en) * | 2005-08-30 | 2007-03-07 | Lg.菲利浦Lcd株式会社 | Liquid crystal display panel and liquid crystal display apparatus having the same |
| CN101571655A (en) * | 2008-04-30 | 2009-11-04 | 乐金显示有限公司 | Liquid crystal display |
| US20140139509A1 (en) * | 2012-11-19 | 2014-05-22 | Samsung Display Co., Ltd. | Pad areas, display panels having the same, and flat panel display devices |
| CN106647082A (en) * | 2017-02-24 | 2017-05-10 | 武汉华星光电技术有限公司 | Circuit and method for testing gate line of array substrate |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111338139A (en) * | 2020-02-18 | 2020-06-26 | 合肥鑫晟光电科技有限公司 | Display substrate and display device |
| CN111338139B (en) * | 2020-02-18 | 2023-11-24 | 合肥鑫晟光电科技有限公司 | Display substrate and display device |
| CN112435620A (en) * | 2020-11-27 | 2021-03-02 | 京东方科技集团股份有限公司 | Display panel, method for detecting display panel and electronic equipment |
| US11837125B2 (en) | 2020-11-27 | 2023-12-05 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display panel, method for detecting display panel and electronic device |
| CN113448131A (en) * | 2021-06-23 | 2021-09-28 | 惠科股份有限公司 | Display panel and test method thereof |
| CN113889012A (en) * | 2021-11-17 | 2022-01-04 | 维信诺科技股份有限公司 | Display panel and display device |
| CN114296263A (en) * | 2022-01-25 | 2022-04-08 | 昆山龙腾光电股份有限公司 | Lighting test circuit, display panel and display device |
| CN114296263B (en) * | 2022-01-25 | 2023-08-25 | 昆山龙腾光电股份有限公司 | Lighting test circuit, display panel and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107219701A (en) | Array base palte and display device | |
| CN102411239B (en) | Liquid crystal display device and method for manufacturing the same | |
| CN106200064B (en) | In-cell touch liquid crystal display device and its manufacturing method | |
| CN102411237B (en) | Liquid crystal display device and method for manufacturing the same | |
| CN103019492B (en) | Embedded capacitive touch control display panel, display device, control device and method | |
| CN107422560A (en) | A kind of array base palte, its detection method and display device | |
| US8988624B2 (en) | Display pixel having oxide thin-film transistor (TFT) with reduced loading | |
| US8743301B2 (en) | Liquid crystal display device provided with an electrode for sensing a touch of a user | |
| CN103034386B (en) | Capacitance type touch control display panel, display device, control device and method | |
| WO2017041422A1 (en) | Touch display panel having pressure detecting function, display device and driving method | |
| CN103294283B (en) | Optical sensing type embedded touch screen and display device | |
| US20170255308A1 (en) | In-cell touch display panel | |
| CN104866158B (en) | A kind of In-cell touch panel and display device | |
| CN107329298A (en) | Lighting test circuit, array base palte and preparation method thereof, display device | |
| CN105448933B (en) | For the array substrate and preparation method thereof in liquid crystal display panel | |
| US7564533B2 (en) | Line on glass type liquid crystal display device | |
| TW201419066A (en) | Touch device, touch display thereof, and electronic apparatus thereof | |
| WO2018040478A1 (en) | Touch panel and method for manufacturing same | |
| CN104020595A (en) | Touch display panel and touch display device | |
| CN103676354A (en) | Electrode structure, preparation method of electrode structure, array substrate, preparation method of array substrate and display device | |
| CN105739768A (en) | Touch display panel and touch display equipment | |
| CN105487717A (en) | Touch panel and manufacturing method thereof | |
| US20200301215A1 (en) | Array substrate, liquid crystal display panel and display device | |
| CN103793091B (en) | Touch display panel and touch display device | |
| WO2019019315A1 (en) | Display device, array substrate, and method for fabricating same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170929 |
|
| RJ01 | Rejection of invention patent application after publication |