CN101724909A - Method for manufacturing three-dimensional photonic crystal - Google Patents
Method for manufacturing three-dimensional photonic crystal Download PDFInfo
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- CN101724909A CN101724909A CN200910200125A CN200910200125A CN101724909A CN 101724909 A CN101724909 A CN 101724909A CN 200910200125 A CN200910200125 A CN 200910200125A CN 200910200125 A CN200910200125 A CN 200910200125A CN 101724909 A CN101724909 A CN 101724909A
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Abstract
The invention relates to a method for manufacturing a three-dimensional photonic crystal, which comprises the following steps of: using silicon dioxide or silicon nitride as a masking layer, transferring required figures on the masking layer into a silicon substrate material by implanting oxygen ions, forming a first layer of silicon dioxide structure in the silicon substrate material, extending single crystal silicon outwards and flattening the surface of the epitaxial layer, depositing the masking layer, photo-etching, implanting the oxygen ions and annealing to form a second layer of silicon dioxide structure, repeating the steps for n times till finishing a required three-dimensional photonic crystal structure. The method is completely compatible with a semiconductor process, can prepare a large-area three-dimensional photonic crystal which can be cut into smaller crystals according to the requirement, has the advantages of high efficiency and low cost, and has a wide application prospect in photoelectric integrated components.
Description
Technical field
The invention belongs to the semiconductor fabrication technical field, relate to the preparation method of photonic crystal, be specifically related to a kind of method for manufacturing three-dimensional photonic crystal.
Background technology
Compare with electronics, photon has faster speed, and almost do not interact, along with the difficulty that electron device under the nanoscale is integrated is increasing, photonic device based on the photon motion, particularly the appearance of the new texture material of this may command photon motion of photonic crystal has brought the hope that overcomes " electronic bottleneck " to people.Because photonic crystal is in the potential advantages of aspects such as self radiation inhibition, waveguide and integrated optical circuit, people's expectation is widely used in following integrated optoelectronic device to it, so that produce smaller szie, the product of high integration and faster processing speed more.
During photonic crystal the different two kinds of materials of specific inductivity in the space according to certain periodic arrangement formed a kind of artificial " crystal " structure.The photonic crystal medium dielectric constant microwave medium is the spatial periodic function, with electronics in the semiconductor material under the effect of periodicity potential field, exist can be with similar, photonic crystal also has photonic band gap and band gap, when light frequency is positioned at the photon band gap scope, can not propagate in photonic crystal.Because the existence of photon band gap, many brand-new physical propertiess have been produced, make it can be used to prepare photoelectron and integrated opto-electronic devices such as high performance laser apparatus, high-quality frequency selector, high performance speculum, during also can be used for making the miniature optical element of integrated optical circuit and light transmission and handling etc., its wide application prospect makes photonic crystal become a research focus of the world today.Photonic crystal be divided into think, the two and three dimensions photonic crystal, have only three photonic crystals can produce omnidirectional complete forbidden band, compare one dimension, 2 D photon crystal and only can produce the direction forbidden band, three-D photon crystal has more general practicality.
At present the preparation method of three-D photon crystal mainly contains following a few class: mechanical processing method, successively superposition method, colloid self-organization method and multiple beam interferometry.Wherein, mechanical processing method is wasted time and energy, and means are comparatively coarse, adopts in just attempting in early days; Successively superposition method has been used comparatively sophisticated semiconductor technology, is one of core methed of preparation photonic crystal, yet this method has very big difficulty when preparation large area photon crystal, and this method cost is too high, and is consuming time long; Colloid self-organization method also is to prepare one of photonic crystal means commonly used at present, its technical matters is simple relatively, available materials is extensive, incomparable advantage is arranged when preparation large period photonic crystal, but its crystalline network that can form is few, is difficult to avoid polycrystalline to produce and interlayer dislocation and structure are caved in etc.; Multiple beam interferometry is the another kind of new tool of preparation photonic crystal, it forms periodic structure by exposure, both can produce a large amount of cycles, also guaranteed simultaneously structural uniformity, input angle, beam intensity, polarization direction and phase place by the control laser beam, can be design crystalline network type the more freedom degree is provided, but the hologram recording material that is fit to is limited at present, still be not prepared into the near infrared three-D photon crystal of practicability, and multiple beam interferometry can not be made the three-D photon crystal of all structures.
Along with the development of integrated optical circuit and the effective integration of photonic device and electron device, it is very urgent that the method that employing and semiconductor technology are compatible fully prepares the communication band three-D photon crystal.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method for manufacturing three-dimensional photonic crystal, to be suitable for preparing large-area three-D photon crystal, can be applicable to the near-infrared band in optical communication field, and this preparation method and semiconductor technology are compatible fully.
For solving the problems of the technologies described above, method for manufacturing three-dimensional photonic crystal provided by the invention utilizes silicon-dioxide or silicon nitride as mask layer, by ion injection method the flagpole pattern on the mask layer is transferred in the silicon substrate material, in silicon substrate, form the silicon-dioxide strip structure, follow epitaxial monocrystalline silicon and planarization epi-layer surface again, deposition mas layer, chemical wet etching, ion implantation and annealing etc. form second layer silicon-dioxide strip structure, repeat above-mentioned steps, finish the three-dimensional photon crystal structure of design until structure.
Method for manufacturing three-dimensional photonic crystal provided by the invention adopts ion injection method to realize, may further comprise the steps:
1) provides a silicon substrate;
2) at described surface of silicon deposit one mask layer, and the coating photoresist material, photoetching is required figure with described mask layer etching;
3) carry out oxonium ion injection and annealing, realize that mask shifts, according to the required figure after the photoetching, formation the first layer silicon dioxide structure in this silicon substrate;
4) remove described mask layer, at described surface of silicon epitaxial monocrystalline silicon, and the described epitaxial substrate of planarization surface;
5) described silicon substrate substrate is turned clockwise m degree angle, 0 °＜m≤90 °, repeating step 2) to 4), preparation second layer silicon dioxide structure;
6) the silicon substrate substrate that step 5) is obtained is rotated counterclockwise m degree angle, repeating step 2) to 4) preparation odd-level silicon dioxide structure;
7) the silicon substrate substrate that step 6) the is obtained m degree angle that turns clockwise again, repeating step 2) to 4) preparation even level silicon dioxide structure;
8) repeating step 6) and 7) n time, after finishing last one deck silicon dioxide structure, remove mask layer.
In the method for manufacturing three-dimensional photonic crystal provided by the invention, mask layer is silicon dioxide layer or silicon nitride layer or the combination of the two, and the cycle of the described silicon dioxide structure for preparing is 0.4～2 micron, and accounting for wide ratio is 0.35～0.65.
In the method for manufacturing three-dimensional photonic crystal provided by the invention, the oxonium ion implantation dosage is 2～10E17cm in the step 3)
-2, the injection energy is 150～200KeV, and annealing temperature is 1300-1400 ℃, and the silicon dioxide structure thickness H that preparation forms is 0.2～0.4 micron; The planarization of extension substrate surface adopts cmp method to realize in the step 4).
In the method for manufacturing three-dimensional photonic crystal provided by the invention, adjacent described odd-level silicon dioxide structure and described even level silicon dioxide structure is spaced apart 0.1～1 micron arbitrarily.As the best-of-breed technology scheme, after last one deck silicon dioxide structure preparation is finished in the step (8), remove mask layer, need not epitaxial monocrystalline silicon once more.
Technique effect of the present invention is, adopt a kind of brand-new method for manufacturing three-dimensional photonic crystal to make up communication band (near-infrared band, λ ≈ 1550nm) three-D photon crystal, this method has been utilized ion injection method the most frequently used in the semiconductor technology, and is compatible fully with semiconductor technology, can prepare large-area three-D photon crystal, and can cut into reduced size as required, have efficiently, advantage cheaply, in integrated optoelectronic device, be with a wide range of applications.
Description of drawings:
Fig. 1 is a method for manufacturing three-dimensional photonic crystal schema provided by the invention;
Fig. 2 a～Fig. 2 h is a method for manufacturing three-dimensional photonic crystal processing step synoptic diagram provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing.
Shown in Fig. 1 to Fig. 2 h, the method for manufacturing three-dimensional photonic crystal that this embodiment provides may further comprise the steps:
Step 1 provides a silicon substrate 210.
In this step, silicon substrate 210 is a silicon single crystal, and its crystal orientation is (100) or (110) or (111), no thickness limits.
Step 2, at silicon substrate 210 surface depositions one mask layer 220, and the coating photoresist material, chemical wet etching is with mask layer patternsization.
In this step, mask layer 220 is silicon dioxide layer or silicon nitride layer or the combination of the two, and mask layer 220 thickness are generally 0.5～1 micron, as the best-of-breed technology scheme, mask layer 220 is a silicon dioxide layer, by thermal oxide growth or chemical meteorological deposit (CVD) method deposition.Mask layer 220 surface coated photoresist materials, through chemical wet etching that mask layer 220 is graphical, and clean and remove photoresist.In this step, the etching of mask layer 220 adopts wet etching or dry etching to realize that dry etching method commonly used is a plasma etching.Fig. 2 a is mask layer 220 cross-sectional view after graphical, shown in Fig. 2 a, opens rectangular window on mask layer 220 surfaces to exposing silicon substrate 210 surfaces.Present embodiment is rectangle preferably.
Step 3 is carried out oxonium ion injection and annealing, realizes that mask shifts, and forms the first layer silicon-dioxide list structure 201 in silicon substrate 210.
In this step, the oxonium ion implantation dosage is 2～10E17cm
-2, the injection energy is 150～200KeV, and annealing temperature is 1300-1400 ℃, and preferred annealing temperature is 1350 ℃ in the present embodiment.Shown in Fig. 2 b, open the rectangle window on mask layer 220 surfaces to exposing silicon substrate 210 surfaces, the diffusion of oxonium ion in the annealing process, the silicon dioxide structure 201 of ion implantation formation is six prisms, its thickness H is 0.2～0.4 micron.
Step 4 is removed mask layer 220, at silicon substrate 210 surperficial epitaxial monocrystalline silicons 230, and planarization epitaxial substrate surface.
In this step, wet etching method is adopted in the removal of mask layer 220.Remove and promptly to obtain the complete silicon substrate 210 the first layer silicon dioxide structures 201 that are positioned at behind the mask layer 220, the degree of depth of this silicon dioxide structure 201 is relevant with oxonium ion injection energy, as the best-of-breed technology scheme, silicon dioxide structure 201 is six prisms, its degree of depth (referring to the degree of depth of silicon single crystal 230 surfaces to silicon-dioxide six prismatic upper surfaces) is 0.1～0.2 micron, its cross-section structure is shown in Fig. 2 c, Fig. 2 d is the first layer silicon dioxide structure 201 perspective view, 201 cycles of silicon dioxide structure are 0.4～2 micron, and accounting for wide ratio is 0.35～0.65.
In this step, shown in Fig. 2 e, adopt epitaxy method in silicon substrate 210 surface growths one single-crystal Si epitaxial layers 230, these single-crystal Si epitaxial layers 230 thickness are 0.1～1 micron, and its surface adopts chemically machinery polished (CMP) method to carry out planarization.
Step 5 is with the silicon substrate 210 substrates m degree angle that turns clockwise, 0 °＜m≤90 °.Preferred 90 degree in the present embodiment, repeating step two prepares second layer silicon-dioxide list structure 202 to step 4.
In this step, it removes mask layer 220 back cross-sectional view shown in Fig. 2 f, Fig. 2 g is a perspective view after 202 preparations of second layer silicon dioxide structure are finished, shown in Fig. 2 f and Fig. 2 g, the second layer silicon dioxide structure 202 for preparing is vertical with the first layer silicon dioxide structure 201 on horizontal plane, and the first layer silicon dioxide structure 201 and second layer silicon dioxide structure 202 0.1～1 micron of spacing distance in vertical direction.In this embodiment, cycle of silicon dioxide structure 202 and to account for wide ratio consistent with the first layer silicon-dioxide list structure 201, be respectively 0.4～2 micron and 0.35～0.65.
Step 6, silicon substrate 210 substrates that step 5 is obtained are rotated counterclockwise 90 and spend to original position, and repeating step two is to step 4, preparation odd-level silicon dioxide structure 201.
Step 7, silicon substrate 210 substrates that step 6 is obtained dextrorotation again turn 90 degrees, and repeating step two is to step 4, preparation even level silicon-dioxide list structure 202.
Fig. 2 h is the three-D photon crystal perspective view that obtains after step 7 is finished, wherein, Fig. 2 h-1 is the three-D photon crystal three-dimensional arrangement skeleton view that obtains after step 7 is finished, and Fig. 2 h-2 is the three-D photon crystal three-dimensional arrangement schematic surface that obtains after step 7 is finished.
Shown in Fig. 2 h, differ 1/2 cycle between adjacent two odd-levels, also differ 1/2 cycle between adjacent two even levels.
Step 8, repeating step six and step 7 are until the preparation of finishing all layers.
In this step, after last layer of silicon dioxide list structure preparation is finished, remove mask layer, need not epitaxial monocrystalline silicon once more.
Other processing condition and the step that relate among the present invention are common process, belong to the category that those skilled in the art are familiar with, and do not repeat them here.
The foregoing description just lists expressivity principle of the present invention and effect is described, but not is used to limit the present invention.Any personnel that are familiar with this technology all can make amendment to the foregoing description under spirit of the present invention and scope.Therefore, the scope of the present invention should be listed as claims.
Claims (11)
1. a method for manufacturing three-dimensional photonic crystal adopts ion injection method to realize, it is characterized in that, may further comprise the steps:
1) provides a silicon substrate;
2) at described surface of silicon deposit one mask layer, and the coating photoresist material, photoetching is required figure with described mask layer etching;
3) carry out oxonium ion injection and annealing, realize that mask shifts, according to the required figure after the photoetching, formation the first layer silicon dioxide structure in this silicon substrate;
4) remove described mask layer, at described surface of silicon epitaxial monocrystalline silicon, and the described epitaxial substrate of planarization surface;
5) described silicon substrate substrate is turned clockwise m degree angle, 0 °＜m≤90 °, repeating step 2) to 4), preparation second layer silicon dioxide structure;
6) the silicon substrate substrate that step 5) is obtained is rotated counterclockwise m degree angle, repeating step 2) to 4) preparation odd-level silicon dioxide structure;
7) the silicon substrate substrate that step 6) the is obtained m degree angle that turns clockwise again, repeating step 2) to 4) preparation even level silicon dioxide structure;
8) repeating step 6) and 7) n time, after finishing last one deck silicon dioxide structure, remove mask layer.
2. method for manufacturing three-dimensional photonic crystal according to claim 1 is characterized in that, described step 2) in required figure after the photoetching be rectangle.
3. according to the residing method for manufacturing three-dimensional photonic crystal of claim 2, it is characterized in that described m is 90 degree.
4. according to claim 2 or 3 described method for manufacturing three-dimensional photonic crystal, it is characterized in that in the described step 3), the oxonium ion implantation dosage is 2～10E17cm
-2, the injection energy is 150～200KeV, annealing temperature is 1300-1400 ℃.
5. method for manufacturing three-dimensional photonic crystal according to claim 4 is characterized in that, the silicon dioxide structure that preparation forms in the step 3) is six prisms, and described six prismatic thickness H are 0.2～0.4 micron.
6. method for manufacturing three-dimensional photonic crystal according to claim 1 is characterized in that: differ 1/2 cycle between described adjacent two odd-levels.
7. method for manufacturing three-dimensional photonic crystal according to claim 1 is characterized in that: differ 1/2 cycle between described adjacent two even levels.
8. method for manufacturing three-dimensional photonic crystal according to claim 1 is characterized in that, described mask layer is silicon dioxide layer or silicon nitride layer or the combination of the two.
9. method for manufacturing three-dimensional photonic crystal according to claim 1 is characterized in that the cycle of described silicon dioxide structure is 0.4～2 micron, and accounting for wide ratio is 0.35～0.65.
10. method for manufacturing three-dimensional photonic crystal according to claim 1 is characterized in that, in the described step 4), the planarization on described epitaxial substrate surface adopts cmp method to realize.
11., it is characterized in that adjacent described odd-level silicon dioxide structure and described even level silicon dioxide structure is spaced apart 0.1～1 micron arbitrarily according to the residing method for manufacturing three-dimensional photonic crystal of claim 1.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102260870A (en) * | 2011-07-15 | 2011-11-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method of sub-micron-sized two-dimensional dielectric cylindrical photonic crystal |
| CN102279518A (en) * | 2011-06-12 | 2011-12-14 | 华北电力大学（保定） | Method for manufacturing metal doped full space or quasi-full space photonic crystal |
| CN102565940A (en) * | 2012-03-13 | 2012-07-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional waveguide structure and manufacturing method thereof |
| CN102662212A (en) * | 2012-05-31 | 2012-09-12 | 中国科学院上海微系统与信息技术研究所 | Photonic crystal and preparation method thereof |
| CN105403935A (en) * | 2015-12-02 | 2016-03-16 | 山东建筑大学 | Preparation method of white-light three-dimensional photonic crystal and apparatus thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100406931C (en) * | 2004-01-09 | 2008-07-30 | 厦门大学 | Preparation method of three dimensional photon crystal and its device |
| CN101024482A (en) * | 2007-03-27 | 2007-08-29 | 吉林大学 | Method for constituting 3-D structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102279518A (en) * | 2011-06-12 | 2011-12-14 | 华北电力大学（保定） | Method for manufacturing metal doped full space or quasi-full space photonic crystal |
| CN102279518B (en) * | 2011-06-12 | 2012-08-08 | 华北电力大学（保定） | Method for manufacturing metal doped full space or quasi-full space photonic crystal |
| CN102260870A (en) * | 2011-07-15 | 2011-11-30 | 中国科学院上海微系统与信息技术研究所 | Preparation method of sub-micron-sized two-dimensional dielectric cylindrical photonic crystal |
| CN102260870B (en) * | 2011-07-15 | 2013-11-06 | 中国科学院上海微系统与信息技术研究所 | Preparation method of sub-micron-sized two-dimensional dielectric cylindrical photonic crystal |
| CN102565940A (en) * | 2012-03-13 | 2012-07-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-dimensional waveguide structure and manufacturing method thereof |
| CN102662212A (en) * | 2012-05-31 | 2012-09-12 | 中国科学院上海微系统与信息技术研究所 | Photonic crystal and preparation method thereof |
| CN105403935A (en) * | 2015-12-02 | 2016-03-16 | 山东建筑大学 | Preparation method of white-light three-dimensional photonic crystal and apparatus thereof |
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