CN101724890A - Method for effectively controlling carbon content in single crystal silicon - Google Patents
Method for effectively controlling carbon content in single crystal silicon Download PDFInfo
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- CN101724890A CN101724890A CN200910175320A CN200910175320A CN101724890A CN 101724890 A CN101724890 A CN 101724890A CN 200910175320 A CN200910175320 A CN 200910175320A CN 200910175320 A CN200910175320 A CN 200910175320A CN 101724890 A CN101724890 A CN 101724890A
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Abstract
The invention discloses a method for effectively controlling carbon content in single crystal silicon. The method uses raw materials with different carbon contents by reasonable collocation, and average carbon content in each furnace charge is reasonably calculated before controlling single crystal silicon, thus greatly improving utilization ratio of secondary material, effectively controlling carbon content in single crystal silicon, saving production cost and improving economic benefit.
Description
Technical field
The present invention relates to the method for in a kind of produce processing quality being carried out quality control, specifically a kind of effective control is with the control method of carbon content in the technology of vertical pulling prepared silicon single crystal.
Background technology
The dislocation-free single crystal silicon that Grown by CZ Method goes out is the main raw of at present domestic and international large-scale integrated circuit.Because the employed monocrystaline silicon stove of vertical pulling method is made up of quartz crucible and the hot system of graphite, therefore the silicon single crystal of preparing includes 1～50 * 10 usually
16Atoms/cm
3Impurity carbon, usually the foreign matter of phosphor that mixes than artificially controlling crystalline conduction type and conductive capability or the concentration of boron exceed about 1～2 order of magnitude, wherein silicon single crystal afterbody carbon concentration is the highest.As everyone knows, the existence of carbon is harmful and unhelpful for silicon single crystal.For example, the existence of carbon can influence the variation of lattice parameter in the silicon single-crystal, and then influences the resistivity of silicon single crystal; High carbon content can be damaged the perfection of lattice of silicon single crystal, causes the PN junction characteristic to degenerate.Along with the increase of carbon content, the degradation phenomena of semiconducter device is accelerated, and voltage breakdown descends, the decrease in yield of device.
Problem about carbon content is a difficult problem of single crystal silicon semiconductor always, and the someone begins it is studied very early.But along with the continuous development of large-scale integrated circuit, more and more stricter to the requirement of the purity of silicon single crystal and crystalline perfection, it is also more and more urgent therefore to control in the silicon single crystal task of carbon content.
The Chinese patent publication number provides a kind of method by regulating the inert gas flow flow to reach the method for control silicon single-crystal carbon content for the patent of CN 1824848A, the parameter that influences inert gas flow in this method is numerous, therefore operating process is very complicated, wayward.In addition,, cause silicon single crystal parameter great disparity bigger, do not have any rule, need therefore its excision is caused the phenomenon of secondary material serious waste because the afterbody carbon concentration of institute's pulling monocrystal silicon product is bigger.
Summary of the invention
The technical problem to be solved in the present invention is the starting material means by the different carbon contents of reasonably combined use, solve low, the uppity problem of silicon single crystal carbon content of present secondary material utilization ratio, reach and improve secondary material utilization ratio, effectively control the purpose that the silicon single crystal carbon content reaches quality control standard.
For solving the problems of the technologies described above, the technical solution used in the present invention provides the method for total carbon in a kind of effective control silicon single crystal raw material, may further comprise the steps:
1) measures the also clear every kind of raw-material carbon content C that adopts of write up
i, accurately measure every kind of raw-material weight M
i
2) according to formula C=(C
1* M
1+ C
2* M
2+ C
3* M
3) * 0.07/ ρ M preparation raw material makes institute join material carbon content≤10 * 10
16Atoms/cm
3
Wherein: C is the carbon content of join raw material, C
1, C
2, C
3Be every kind of raw-material carbon content, M
1, M
2, M
3Be the different carbon content C of correspondence
1, C
2, C
3Raw-material quality, 0.07 is segregation coefficient, ρ is the density of silicon, M is the join total amount of raw material;
3) with joining raw material put into monocrystaline silicon stove, the heating and melting pulling silicon single crystal;
4) carbon content of top, middle part and the tail end of measurement institute pulled crystal silicon is with carbon content on the silicon single crystal＞10 * 10
16Atoms/cm
3Position excision, use as the starting material of next pulling monocrystal silicon.
Adopt the beneficial effect that technique scheme produced to be: by the starting material of the different carbon contents of reasonably combined use, go out the average carbon content of every stove raw material before the pulling monocrystal silicon with regard to reasonable computation, the carbon content of the raw material of preparation is controlled in allowed limits, therefore effectively control the carbon content of institute's pulled crystal silicon, and greatly improved the utilization ratio of secondary material.Can make carbon content＜5 * 10 of drawing in the production
16Atoms/cm
3Silicon single crystal brought up to 92.39% by 47.40% of total radical, every monthly average can make the silicon single crystal of about 140Kg by carbon content＞10 * 10
16Atoms/cm
3Be reduced to carbon content＜10 * 10
16Atoms/cm
3, improved the quality of pulling monocrystal silicon, saved production cost, improved economic benefit.
Description of drawings
Fig. 1 is the carbon content distribution plan of silicon single crystal after use the inventive method;
Fig. 2 is for using the carbon content distribution plan of the preceding silicon single crystal of the inventive method;
Wherein,
Represent radical,---●---represent shared total radical ratio.
Embodiment
From Fig. 1 and Fig. 2 as can be seen, use the method for carbon content in effective control silicon single crystal provided by the invention after, pulled crystal silicon yield rate significantly improves, the carbon content of drawing＜5 * 10
16Atoms/cm
3Silicon single crystal brought up to 92.39%, carbon content＞30 * 10 from 47.40% of total radical
16Atoms/cm
3Silicon single crystal drop to by 25.00% of the total radical of original growth and only account for 0.31% of total amount.The carbon content that draws is 5 * 10
16Atoms/cm
3～10 * 10
16Atoms/cm
3, 10 * 10
16Atoms/cm
3～20 * 10
16Atoms/cm
3, 20 * 10
16Atoms/cm
3～30 * 10
16Atoms/cm
3Silicon single crystal in the scope drops to 4.83%, 2.16%, 0.31% by 8.80%, 7.30%, 11.70 of original total radical respectively.Therefore method provided by the invention is practical, and has created very high economic benefit.
Below in conjunction with embodiment the present invention is described in further detail.
The method of carbon content in effective control silicon single crystal of the present invention may further comprise the steps:
1) measures the also clear every kind of raw-material carbon content C that adopts of write up
i, accurately measure every kind of raw-material weight M
iCan classify according to raw-material carbon content, preferably be divided three classes: the raw-material carbon content of category-A≤10 * 10
16Atoms/cm
3, 10 * 10
16Atoms/cm
3The raw-material carbon content of＜category-B≤30 * 10
16Atoms/cm
3, the raw-material carbon content of C class＞30 * 10
16Atoms/cm
3
2) according to formula C=(C
1* M
1+ C
2* M
2+ C
3* M
3) * 0.07/ ρ M preparation raw material makes institute join material carbon content≤10 * 10
16Atoms/cm
3
Wherein: C is the carbon content of join raw material, C
1, C
2, C
3Be every kind of raw-material carbon content, M
1, M
2, M
3Be the different carbon content C of correspondence
1, C
2, C
3Raw-material quality, 0.07 is segregation coefficient, ρ is the density of silicon, M is the join total amount of raw material;
3) with joining raw material put into monocrystaline silicon stove, the heating and melting pulling silicon single crystal;
4) carbon content of top, middle part and the tail end of measurement institute pulled crystal silicon is with carbon content on the silicon single crystal＞10 * 10
16Atoms/cm
3Position excision, use as the starting material of next pulling monocrystal silicon.
Can be summarized as following concrete production control process:
With the raw-material carbon content of Ni Gaoli 5700 infrared spectrometers test test, (be silicon single crystal rod end centrum, tail cone and carbon content＞10 * 10 to the secondary material of pulled crystal silicon
16Atoms/cm
3Silicon single crystal rod) set up corresponding carbon content database with other starting material (as polysilicon), each raw-material carbon content of detail record is also classified, preferred mode classification is divided three classes: category-A starting material≤10 * 10
16Atoms/cm
3, 10 * 10
16Atoms/cm
3＜category-B starting material≤30 * 10
16Atoms/cm
3, C class starting material＞30 * 10
16Atoms/cm
3Test, the carbon content data had been write down in strictness when burn into was rechecked operation.At last when batching according to formula C=(C
1* M
1+ C
2* M
2+ C
3* M
3) * 0.07/ ρ M prepares burden, and makes the carbon content C that calculates meet the requirement of pulling monocrystal silicon product, C
i(i=1,2,3 ...) by being adopted every kind of raw-material carbon content, M
iBe every kind of raw-material weight through accurately measuring.As the starting material of undesirable replaceable different carbon contents or increase the starting material of other carbon contents, until making the carbon content that calculates fall into the desired scope of pulling monocrystal silicon.The carbon content numerical value that calculates should be as far as possible less than given required value, and this is also to have part carbon because of the oxidation of thermal field element in actual pulling process because in the monocrystaline silicon stove to enter single crystal silicon.
Confected materials is put into crucible and placed stove, put into seed crystal after the high-temperature fusion and begin pulling monocrystal silicon.After finishing, drawing tests the carbon content of top, middle part and the tail end of institute's pulling monocrystal silicon with Ni Gaoli 5700 infrared spectrometers, because the carbon major sedimentary is at the afterbody of institute's pulled crystal silicon, therefore, mainly test the carbon content of silicon single crystal afterbody, with carbon content＞10 * 10
16Atoms/cm
3Part excision, and write down carbon content and used with starting material as next pulling monocrystal silicon.The top and the afterbody of pulled crystal silicon rod are cone-shaped body, and this part can't be used as finished product, therefore need to classify its excision as silicon single crystal secondary material, and use as the starting material of next pulling monocrystal silicon.
Claims (4)
1. effective method of carbon content in the control silicon single crystal is characterized in that may further comprise the steps:
1) measures the also clear every kind of raw-material carbon content C that adopts of write up
i, accurately measure every kind of raw-material weight M
i
2) according to formula C=(C
1* M
1+ C
2* M
2+ C
3* M
3) * 0.07/ ρ M preparation raw material makes institute join material carbon content≤10 * 10
16Atoms/cm
3
Wherein: C is the carbon content of join raw material, C
1, C
2, C
3Be every kind of raw-material carbon content, M
1, M
2, M
3Be the different carbon content C of correspondence
1, C
2, C
3Raw-material quality, 0.07 is segregation coefficient, ρ is the density of silicon, M is the join total amount of raw material;
3) with joining raw material put into monocrystaline silicon stove, the heating and melting pulling silicon single crystal;
4) carbon content of top, middle part and the tail end of measurement institute pulled crystal silicon is with carbon content on the silicon single crystal＞10 * 10
16Atoms/cm
3Position excision, use as the starting material of next pulling monocrystal silicon.
2. the method for carbon content in effective control silicon single crystal according to claim 1 is characterized in that described starting material comprise: polysilicon or secondary material or both combinations.
3. the method for carbon content is characterized in that classifying according to raw-material carbon content before batching in effective control silicon single crystal according to claim 1, preferably is divided three classes: the raw-material carbon content of category-A≤10 * 10
16Atoms/cm
3, 10 * 10
16Atoms/cm
3The raw-material carbon content of＜category-B≤30 * 10
16Atoms/cm
3, the raw-material carbon content of C class＞30 * 10
16Atoms/cm
3
4. the method for carbon content in effective control silicon single crystal according to claim 1 is characterized in that the employed instrument of described measurement carbon content is Ni Gaoli 5700 infrared spectrometers.
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|---|---|---|---|
| CN200910175320A CN101724890A (en) | 2009-12-14 | 2009-12-14 | Method for effectively controlling carbon content in single crystal silicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817075A (en) * | 2012-08-18 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Master alloy production method by using polycrystalline foundry furnace |
-
2009
- 2009-12-14 CN CN200910175320A patent/CN101724890A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817075A (en) * | 2012-08-18 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Master alloy production method by using polycrystalline foundry furnace |
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Application publication date: 20100609 |