CN101720161A - Plasma illuminating lamp control device - Google Patents
Plasma illuminating lamp control device Download PDFInfo
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- CN101720161A CN101720161A CN 200910213869 CN200910213869A CN101720161A CN 101720161 A CN101720161 A CN 101720161A CN 200910213869 CN200910213869 CN 200910213869 CN 200910213869 A CN200910213869 A CN 200910213869A CN 101720161 A CN101720161 A CN 101720161A
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Abstract
The invention discloses a plasma illuminating lamp control device which comprises a radio frequency exciting source, a radio frequency power amplification circuit and a switching power unit. The plasma illuminating lamp control device is also provided with a microcontroller unit, wherein a radio frequency exciting source signal control and output end of the microcontroller unit is connected with a control end of the radio frequency exciting source; the frequency of output signals of the radio frequency exciting source is controlled by the microcontroller unit according to the luminescence characteristics of a plasma lamp; and the microcontroller unit controls the attenuation amplitude of an automatic attenuation control circuit to radio frequency exciting source signals according to signals output by a signal resource detecting circuit and power required to be output for exciting plasmas. The invention combines the luminescence characteristics of the plasmas, improves the luminescence quality of the plasma lamp and ensures that a light source emitted by the plasma lamp after the plasma lamp is excited is closer to the natural light, the start of the plasma lamp is more stable, and the plasma lamp can continuously and stably give out light.
Description
Technical field
The present invention relates to the control device of plasma lighting technical field, particularly a kind of plasma illuminating lamp.
Background technology
Plasma is a kind of common material in the universe, all has plasma in the sun, fixed star, lightning, and it has accounted for 99% of whole universe.Plasma is a kind of good electric conductor, can utilize electric field and magnetic field to produce and control plasma.When adding high voltage between two electrodes, cause the discharge of inert gas or salts substances, excite the generation high light, plasma technique is compared with other display mode and is had tangible difference, aspect structure and composition all in the lead.At present, the plasma light source applications all is on display screen, as plasm TV, plays picture and text demonstration effect, also has as ornament ball.As the bigger illuminating lamp of power with also rarely having finding.The legacy drive tranmitting frequency is constant, if want to control variable very difficult.When the power ratio of plasma light source is big, during in particular as illumination, will solve radio-frequency power amplifies, starting current impacts, the luminous mass of control plasma lamp is sent plasma lamp light and approach natural daylight and stable the startup and a difficult problem such as continous-stable is luminous, otherwise not only wasted work greatly also has a strong impact on its stability and life-span.
Summary of the invention
The purpose of this invention is to provide that a kind of stable performance, lighting power are controlled, the plasma illuminating lamp control device of frequency adjustable.
Technical scheme of the present invention is as follows:
A kind of plasma illuminating lamp control device, comprise the RF excited source, rf power amplifier circuit and switching power supply, it is characterized in that: described plasma illuminating lamp control device is provided with micro controller unit, micro controller unit comprises microcontroller MCU, the A/D module, D/A module and EEPROM, the output in RF excited source is connected with the A/D module interface of micro controller unit by the signal source detecting circuit, detect by the energy of micro controller unit radio frequency driving source output signal, the output in RF excited source also is connected with automatic attenuation control circuit, automatically be connected with automatic level control circuit on the output of attenuation control circuit, the output of automatic level control circuit links to each other with the input of described rf power amplifier circuit, be connected with the output signal detecting circuit on the output of rf power amplifier circuit, first output of output signal detecting circuit links to each other with the negative feedback control signal input of automatic level control circuit through negative feedback amplifier circuit, second output of output signal detecting circuit links to each other with the A/D module interface of micro controller unit, the D/A module interface of micro controller unit links to each other with the signal input end of automatic attenuation control circuit, the RF excited source signal control output end of micro controller unit is connected with the control end in RF excited source, by microprogrammed control unit control RF excited source output signal frequency, micro controller unit is controlled the amplitude of automatic attenuation control circuit to radio frequency driving source attenuated output signal according to the signal of signal source detecting circuit output and the power requirement of activate plasma needs output.
Described rf power amplifier circuit is formed by preamplifying circuit, promotion level amplifying circuit and final stage amplifying circuit three-stage cascade.
Between described promotion level amplifying circuit and final stage amplifying circuit, be connected with temperature-compensation circuit.
Be connected with 485 communication modules on the described micro controller unit, this module links to each other with host computer by communication cable, by all working state of host computer monitoring plasma illuminating lamp control device.
Described preamplifying circuit is made of the MSA-1105 chip, and described promotion level amplifying circuit is made of the MW6S004 chip.
Described final stage amplifying circuit comprises the LDMOS pipe, the direct current drain electrode supply network of LDMOS pipe and the direct current gate bias Control Network of LDMOS pipe, the source class ground connection of LDMOS pipe, enter impedance Z 2 little bands couplings of 50 Ω after impedance Z 1 little band matching capacitance C12 isolation through 50 Ω behind the input of the signal inflow final stage amplifying circuit of RF excited source output, capacitor C 13 is mated over the ground, by impedance Z 3, impedance Z 4 is carried out little band impedance conversion to impedance Z 5, impedance Z 6, enter output matching network after amplifying through LDMOS pipe microwave radio again, through impedance Z 7, carry out little band impedance conversion to impedance Z 9 after impedance Z 8 little band couplings, use direct-to-ground capacitance C21 to be connected with impedance Z 10 little bands with direct-to-ground capacitance C22 coupling back, by capacitor C 13 isolated DC voltages after the RF excited source signal of the impedance 11 of 50 Ω output after amplifying to drive plasma lamp luminous, the direct current drain electrode supply network of LDMOS comprises inductance coil L1, inductance coil L2, capacitor C 14, capacitor C 15, capacitor C 16, capacitor C 17, capacitor C 18, capacitor C 19, capacitor C 20, inductance coil L1, inductance coil L2 and magnetic coil B3 are connected in series successively, the other end of magnetic coil B3 is connected with the input of power supply, the other end of inductance coil L1 is connected on the connecting circuit of impedance Z 8 and impedance Z 9, capacitor C 14, capacitor C 15, capacitor C 16 is connected in parallel between the connecting circuit and ground of inductance coil L1 and inductance coil L2, capacitor C 17, capacitor C 18, capacitor C 19 is connected in parallel between the connecting circuit and ground of inductance coil L2 and magnetic coil B3, capacitor C 20 is connected between the input and ground of power supply, the direct current gate bias Control Network of LDMOS pipe comprises resistance R 1, resistance R 2, resistance R 3 magnetic coil B1, magnetic coil B2, capacitor C 1, capacitor C 2, capacitor C 3, capacitor C 4, capacitor C 5, capacitor C 6, capacitor C 7, capacitor C 8, capacitor C 9, capacitor C 10, capacitor C 11, resistance R 2, resistance R 1 and magnetic coil B1 connect successively, the other end of magnetic coil B1 is connected with the bias supply input, on the connecting circuit of the other end of resistance R 2 and impedance Z 4 and impedance Z 5, resistance R 3 is connected in the two ends of resistance R 2 in parallel, magnetic coil B2 is connected in the two ends of resistance R 1 in parallel, capacitor C 1, capacitor C 2, capacitor C 3 is connected in parallel between bias supply input and the ground, capacitor C 4, capacitor C 5, capacitor C 6, capacitor C 7 is connected in parallel between the connecting circuit and ground of magnetic coil B1 and resistance R 1, capacitor C 8, capacitor C 9, capacitor C 10, capacitor C 11 is connected in parallel between the connecting circuit and ground of resistance R 1 and resistance R 2.
Described LDMOS pipe adopts MRF6S9060/BLF01-135.
Described preamplifying circuit is provided with the gain warning circuit, and the grid of LDMOS pipe is provided with the grid voltage warning circuit, the alarm of grid voltage warning circuit and gain warning circuit alarm by " or " logical relation judges the quality of LDMOS pipe.
The bandwidth of described RF excited source output signal is 430MHz-470MHz.
Export by following sequence scanning under the control of micro controller unit in described RF excited source:
(1) initial period
Original frequency is set at 450MHz, scans 430MHz from 450MHz, and frequency is divided into 1MHz mutually;
(2) address period
Frequency change scans 430MHz from 451MHz from 451MHz for the second time, and frequency is divided into 1MHz mutually;
Frequency change scans 430MHz from 452MHz from 452MHz for the third time, and frequency is divided into 1MHz mutually;
Frequency change scans 430MHz from 453MHz from 453MHz for the third time, and frequency is divided into 1MHz mutually;
Change successively 20 times, last frequency changes from 470MHz, scans 430MHz from 470MHz, and frequency is divided into 1MHz mutually;
(3) keep the phase
After finishing above variation, frequency configuration stops 120 seconds, restarts with cocycle again.
Advantage of the present invention is:
1) combines the characteristics of luminescence of plasma lamp, excite plasma lamp luminous with variable pulse duration frequency signal, improved the luminous mass of plasma lamp, the light source that sends after plasma lamp is excited more approaches natural daylight, and makes the startup of plasma lamp stable more and continous-stable is luminous; Carry out controlling of sampling and added negative-feedback circuit and temperature-compensation circuit with the signal of microcontroller the output of radio frequency driving source, for the plasma lamp stabilized illumination provides stable power output, and the final stage amplifying circuit adopts LDMOS pipe and corresponding match circuit to guarantee that further the stability of power output has improved power and efficient simultaneously.
2) studies show that decision plasma lamp luminous mass is relevant with the power and the frequency of output signal, the spectrum of frequency decision illuminating source, the brightness of power decision illuminating source, therefore micro controller unit sends the spectrum of light source by above-mentioned sequential algorithm controls plasma lamp, simultaneously the signal of radio frequency driving source output is sampled and according to the luminosity of the requirement control plasma lamp of activate plasma needs power output.Adopt above-mentioned time sequence algorithm, combine the characteristics of luminescence of plasma lamp, help exciting inert gas or salts substances in the plasma lamp to be ionized into plasma state and to form the plasma light source, stabilized illumination grows from weak to strong, the stable startup and the continous-stable that help plasma lamp are luminous, and the light source that sends more approaches natural daylight.
Description of drawings
Fig. 1 is the schematic diagram of plasma illuminating lamp control device of the present invention;
Fig. 2 is the schematic diagram of the final stage amplifying circuit of plasma illuminating lamp control device of the present invention;
Fig. 3 is the circuit structure diagram of the final stage amplifying circuit of plasma illuminating lamp control device of the present invention;
Fig. 4 is the sequential sketch of microprogrammed control unit control RF excited source output signal;
Fig. 5 is the gain level distribution principle figure of plasma illuminating lamp control device of the present invention.
Embodiment
Shown in Fig. 1-5, a kind of plasma illuminating lamp control device, comprise RF excited source 1, rf power amplifier circuit 4 and switching power supply 9, this plasma illuminating lamp control device also is provided with micro controller unit 8, micro controller unit 8 comprises microcontroller MCU, the A/D module, D/A module and EEPROM, the output in RF excited source 1 is connected with the A/D module interface of micro controller unit 8 by signal source detecting circuit 6, energy by the radiofrequency signal of 8 pairs of radio frequency driving sources of micro controller unit 1 output detects, the output in RF excited source 1 also is connected with automatic attenuation control circuit 2, automatically be connected with automatic level control circuit 3 on the output of attenuation control circuit 2, the output of automatic level control circuit 3 links to each other with the input of described rf power amplifier circuit 4, be connected with output signal detecting circuit 7 on the output of rf power amplifier circuit 4, first output of output signal detecting circuit 7 links to each other with the negative feedback control signal input of automatic level control circuit 3 through negative feedback amplifier circuit 5, second output of output signal detecting circuit 7 links to each other with the A/D module interface of micro controller unit 8, the D/A module interface of micro controller unit 8 links to each other with the signal input end of automatic attenuation control circuit 2, the RF excited source signal control output end of micro controller unit 8 is connected with the control end in RF excited source 1, by micro controller unit 8 control RF excited sources 1 output signal frequency, micro controller unit 8 is controlled the attenuation amplitude of 2 pairs of signals of automatic attenuation control circuit according to the requirement of the signal of signal source detecting circuit 6 outputs and power output.
Also be connected with 485 level switch modules 10 on the micro controller unit 8, this module 10 links to each other with host computer by communication cable, can monitor on host computer.
Rf power amplifier circuit 4 is formed by preamplifying circuit 41, promotion level amplifying circuit 42 and final stage amplifying circuit 43 three-stage cascades, promoting to be connected with temperature-compensation circuit 44 between level amplifying circuit 42 and the final stage amplifying circuit 43, makes power output more stable.
Defeated 1 bandwidth that goes out signal in RF excited source is 430MHz-470MHz.
Following sequence scanning output signal is pressed in RF excited source 1 under the control of micro controller unit 8:
(1) initial period
Original frequency is set at 450MHz, scans 430MHz from 450MHz, and frequency is divided into 1MHz mutually;
(2) address period
Frequency change scans 430MHz from 451MHz from 451MHz for the second time, and frequency is divided into 1MHz mutually;
Frequency change scans 430MHz from 452MHz from 452MHz for the third time, and frequency is divided into 1MHz mutually;
Frequency change scans 430MHz from 453MHz from 453MHz for the third time, and frequency is divided into 1MHz mutually;
Change successively 20 times, last frequency changes from 470MHz, scans 430MHz from 470MHz, and frequency is divided into 1MHz mutually;
(3) keep the phase
After finishing above variation, frequency configuration stops 120 seconds, restarts with cocycle again.
The signal that micro controller unit 8 is exported the radio frequency driving source according to the requirement of activate plasma needs power output carries out controlling of sampling and has added negative-feedback circuit 5 and temperature-compensation circuit 44; the reliability protection of amplifying for amplifier to final stage can also add circulator; for the plasma lamp stabilized illumination provides stable power output, and final stage amplifying circuit 43 adopts LDMOS pipe and corresponding match circuit to guarantee that further the stability of power output has improved power efficiency simultaneously.
Plasma illuminating lamp control device of the present invention can be applied in complete machine and be output as on the plasma light energy-conserving road lamp of 150W, needs according to power, the power output of plasma illuminating lamp control device can reach about 190W, when carrying out type selecting, can select microwave device the big and ripe device of MTBF for use, as MSA-1105 and MW6S004 all is that the MRF69060/BLF01-135 that very ripe device and MOTOROLA recommend also is very ripe device, uses these ripe devices can improve stability and improves power efficiency.Can be during design with reference to major technology index request as shown in table 1.
The requirement of table 1 leading indicator
| Frequency range | ??430MHz-470MHz |
| Power gain | ??39.7dB±0.5dB |
| Passband fluctuation | ??≤0.5dB |
| 1dB compression point power (P -1) | ??＞52.7dBm(190W) |
| I/O standing-wave ratio (VSWR) | ??≤1.5∶1 |
| Harmonic wave output | ??≤-45dBc@2nd；≤-60dBc@3rd |
| Bias voltage | ??+9V；+27V-28V |
| Operating current | Static:＜2.0A;＜4.5A@26DC ,+40.0dBm |
| Working temperature | -40 ℃-+55 ℃ ,-40 ℃-+75 ℃ (base) |
| Storage temperature | ??-40℃-+80℃ |
| Working relative humidity | ??0％-95％RH(NON-Condensing) |
| Storage humidity | ??0％-95％RH(NON-Condensing) |
| Gain varies with temperature | ≤ 2dB-25 ℃-+75 ℃; ≤ 3.5dB-40 ℃-+75 ℃ (base) |
| ??MTBF | ??＞100,000h |
Main components and parts index is as follows:
The index of MW6S004 actuator unit
f：430--470MHz
Gain: 20dB
P
-1＝8W
Supply power voltage: 28V
Quiescent current: 550mA
The index of MRF6S9060/BLF01-135 driving tube
f：430--470MHz
Gain: 16.5dB
P
-1＝120Wx2
f1＝430MHz，f2＝470MHz
Supply power voltage: 28V
Quiescent current: 2 * 500mA
Efficiency eta=48%@50.8dBm CW, Vd=28V, Iq=2 * 500mA.f=470MHz
η≥15％@40dBm??CW，Vd＝28V，Iq＝2×500mA.f＝470MHz
Index request control device peak power output is 52.7dBm, gains to be 39.7dB.During design, power output should be able to satisfy index and surplus is arranged, can be with reference to gain level distribution diagram shown in Figure 5.
The circuit structure diagram of final stage amplifying circuit 43 as shown in Figure 3, impedance Z 1, impedance Z 2, impedance Z 3, impedance Z 4, impedance Z 5, impedance Z 6, impedance Z 7, impedance Z 8, impedance Z 9, impedance Z 10, impedance Z 11 are impedances of PCB circuit design, and concrete parameter is as follows:
Z1?????0.352″×0.082″Microstrip????Z8?????0.085″×0.170″Microstrip
Z2?????1.567″×0.082″Microstrip????Z9?????2.275″×0.170″Microstrip
Z3?????0.857″×0.082″Microstrip????Z10????0.945″×0.170″Microstrip
Z4?????0.276″×0.220″Microstrip????Z11????0.443″×0.082″Microstrip
Z5?????0.434″×0.220″Microstrip????PCB????Arlon?CuClad?250GX-0300-55-22，0.030″，
Z6.Z7??0.298″×0.630″Microstrip
The design of switching power supply is converted into low-voltage direct 28V power supply with the 220V AC power, and makes power supply moment startup can sustain the heavy current impact of 10A.
Can also add the circuit warning circuit during design, if circuit adopts electric current alarm mode, because the electric current of the required 28V of work is very big, the sample resistance of electric current alarm need bear very big power, electric current is about 1.8A when static state, if sampling voltage is 180mV, then sample resistance R=0.18V/1.8=0.1 Ω; When starting to control power, its operating current is about 3.5A, and the pressure drop on the sample resistance is 0.1 Ω * 3.5A=0.35V, and then the power consumption on the sample resistance is: 3.5
2* 0.1=1.2W; When power reached 90W, its operating current was about 8.5A, and the pressure drop on the sample resistance is 0.1 Ω * 8.5A=0.85V, and then the power consumption on the sample resistance is: 8.5
2* 0.1=7.23W; So big power can only be shared by a plurality of high-power resistance parallel connections.Grid voltage is more stable during because of the actuator tube operate as normal, about 3.8V, and actuator tube is when having broken, the grid resistance to earth is below hundreds of Europe, normal condition is that grid voltage approaches 0V about 4M Ω, so can detect the quality of driver by the voltage that detects grid, grid voltage directly drawn get final product, need not to increase any circuit.Because MSA-1105 and MW6S004 are normal and burn out under the situation gain and changes greatlyyer usually, so prime preferably adopts the alarm mode that gains.In sum, circuit adopts gain alarm and grid voltage alarm.Gain alarm and grid voltage alarm are or logical relation because of low level is effectively alarmed, to need through one or two inputs and door output.
Can also add the standing wave warning circuit, the standing wave alarming threshold can be established, and in order to deal with the extreme case of the high-power total reflection of output, the power of the damping resistance of output isolator will be chosen suitably.In addition, or not and miss alarm, should choose the dummy load of certain value standing-wave ratio and adjust the standing wave alarming threshold for avoiding this alarm.
Aspect microwave capacitors selected for use, factors such as temperature rise when selecting big electric current, big rated voltage for use, thermal resistance is little and considers the circuit operate as normal and stability were so must select the ceramic flaky electric capacity of the high-quality of high stable, high Q value for use.In design mainly from following some consideration: 1) choose the low electric capacity of ESR, select the electric capacity of high Q value for the electrical characteristics that improve electric capacity for reducing actual dissipation power; 2) in order to reduce thermal resistance, select the low electric capacity of RMS, and along with temperature rise changes little electric capacity; 3) for avoiding variations in temperature that the appearance value is changed, cause coupling to change, must select the appearance value to change, so select the microwave capacitors of high stable, big rated voltage for use in last utmost point output along with variations in temperature is little.
The design of actuator tube heat radiation aspect, because the Great Power Driver heat dissipation problem is the stable key factor of actuator unit, for reducing the thermal resistance of actuator tube to box body, use the screw of M2.5 in the actuator tube both sides, be coated with even a spot of heat radiation oil to fill up the slit between body and the box body in the driver bottom, the deaeration composition reduces thermal resistance.For reducing the thermal resistance of box body and casing, require box bottom processing smooth simultaneously, tighten screw, allow heat fully shed from cabinet.
More than be to combine specific embodiment to introduce the present invention, but the present invention do not really want to be limited on the details of being showed, in the equivalent scope of claims, do not deviate under the situation of spirit of the present invention in addition, can make all improvement in detail.
Claims (10)
1. plasma illuminating lamp control device, comprise the RF excited source, rf power amplifier circuit and switching power supply, it is characterized in that: described plasma illuminating lamp control device is provided with micro controller unit, micro controller unit comprises microcontroller MCU, the A/D module, D/A module and EEPROM, the output in RF excited source is connected with the A/D module interface of micro controller unit by the signal source detecting circuit, detect by the energy of micro controller unit radio frequency driving source output signal, the output in RF excited source also is connected with automatic attenuation control circuit, automatically be connected with automatic level control circuit on the output of attenuation control circuit, the output of automatic level control circuit links to each other with the input of described rf power amplifier circuit, be connected with the output signal detecting circuit on the output of rf power amplifier circuit, first output of output signal detecting circuit links to each other with the negative feedback control signal input of automatic level control circuit through negative feedback amplifier circuit, second output of output signal detecting circuit links to each other with the A/D module interface of micro controller unit, the D/A module interface of micro controller unit links to each other with the signal input end of automatic attenuation control circuit, the RF excited source signal control output end of micro controller unit is connected with the control end in RF excited source, by microprogrammed control unit control RF excited source output signal frequency, micro controller unit is controlled the amplitude of automatic attenuation control circuit to radio frequency driving source attenuated output signal according to the signal of signal source detecting circuit output and the power requirement of activate plasma needs output.
2. plasma illuminating lamp control device according to claim 1 is characterized in that: described rf power amplifier circuit is formed by preamplifying circuit, promotion level amplifying circuit and final stage amplifying circuit three-stage cascade.
3. plasma illuminating lamp control device according to claim 2 is characterized in that: be connected with temperature-compensation circuit between described promotion level amplifying circuit and final stage amplifying circuit.
4. plasma illuminating lamp control device according to claim 1, it is characterized in that: be connected with 485 communication modules on the described micro controller unit, this module links to each other with host computer by communication cable, by all working state of host computer monitoring plasma illuminating lamp control device.
5. plasma illuminating lamp control device according to claim 2 is characterized in that: described preamplifying circuit is made of the MSA-1105 chip, and described promotion level amplifying circuit is made of the MW6S004 chip.
6. plasma illuminating lamp control device according to claim 2, it is characterized in that: described final stage amplifying circuit comprises the LDMOS pipe, the direct current drain electrode supply network of LDMOS pipe and the direct current gate bias Control Network of LDMOS pipe, the source class ground connection of LDMOS pipe, enter impedance Z 2 little bands couplings of 50 Ω after impedance Z 1 little band matching capacitance C12 isolation through 50 Ω behind the input of the signal inflow final stage amplifying circuit of RF excited source output, capacitor C 13 is mated over the ground, by impedance Z 3, impedance Z 4 is carried out little band impedance conversion to impedance Z 5, impedance Z 6, enter output matching network after amplifying through LDMOS pipe microwave radio again, through impedance Z 7, carry out little band impedance conversion to impedance Z 9 after impedance Z 8 little band couplings, use direct-to-ground capacitance C21 to be connected with impedance Z 10 little bands with direct-to-ground capacitance C22 coupling back, by capacitor C 13 isolated DC voltages after the RF excited source signal of the impedance 11 of 50 Ω output after amplifying to drive plasma lamp luminous
The direct current drain electrode supply network of LDMOS comprises inductance coil L1, inductance coil L2, capacitor C 14, capacitor C 15, capacitor C 16, capacitor C 17, capacitor C 18, capacitor C 19, capacitor C 20, inductance coil L1, inductance coil L2 and magnetic coil B3 are connected in series successively, the other end of magnetic coil B3 is connected with the input of power supply, the other end of inductance coil L1 is connected on the connecting circuit of impedance Z 8 and impedance Z 9, capacitor C 14, capacitor C 15, capacitor C 16 is connected in parallel between the connecting circuit and ground of inductance coil L1 and inductance coil L2, capacitor C 17, capacitor C 18, capacitor C 19 is connected in parallel between the connecting circuit and ground of inductance coil L2 and magnetic coil B3, capacitor C 20 is connected between the input and ground of power supply
The direct current gate bias Control Network of LDMOS pipe comprises resistance R 1, resistance R 2, resistance R 3 magnetic coil B1, magnetic coil B2, capacitor C 1, capacitor C 2, capacitor C 3, capacitor C 4, capacitor C 5, capacitor C 6, capacitor C 7, capacitor C 8, capacitor C 9, capacitor C 10, capacitor C 11, resistance R 2, resistance R 1 and magnetic coil B1 connect successively, the other end of magnetic coil B1 is connected with the bias supply input, on the connecting circuit of the other end of resistance R 2 and impedance Z 4 and impedance Z 5, resistance R 3 is connected in the two ends of resistance R 2 in parallel, magnetic coil B2 is connected in the two ends of resistance R 1 in parallel, capacitor C 1, capacitor C 2, capacitor C 3 is connected in parallel between bias supply input and the ground, capacitor C 4, capacitor C 5, capacitor C 6, capacitor C 7 is connected in parallel between the connecting circuit and ground of magnetic coil B1 and resistance R 1, capacitor C 8, capacitor C 9, capacitor C 10, capacitor C 11 is connected in parallel between the connecting circuit and ground of resistance R 1 and resistance R 2.
7. plasma illuminating lamp control device according to claim 6 is characterized in that: described LDMOS pipe adopts MRF6S9060/BLF01-135.
8. plasma illuminating lamp control device according to claim 2, it is characterized in that: described preamplifying circuit is provided with the gain warning circuit, the grid of LDMOS pipe is provided with the grid voltage warning circuit, the alarm of grid voltage warning circuit and gain warning circuit alarm by " or " logical relation judges the quality of LDMOS pipe.
9. according to described any one plasma illuminating lamp control device of claim 1-8, it is characterized in that: the bandwidth of described RF excited source output signal is 430MHz-470MHz.
10. plasma illuminating lamp control device according to claim 9 is characterized in that: export by following sequence scanning under the control of micro controller unit in described RF excited source:
(1) initial period
Original frequency is set at 450MHz, scans 430MHz from 450MHz, and frequency is divided into 1MHz mutually;
(2) address period
Frequency change scans 430MHz from 451MHz from 451MHz for the second time, and frequency is divided into 1MHz mutually;
Frequency change scans 430MHz from 452MHz from 452MHz for the third time, and frequency is divided into 1MHz mutually;
Frequency change scans 430MHz from 453MHz from 453MHz for the third time, and frequency is divided into 1MHz mutually;
Change successively 20 times, last frequency changes from 470MHz, scans 430MHz from 470MHz, and frequency is divided into 1MHz mutually;
(3) keep the phase
After finishing above variation, frequency configuration stops 120 seconds, restarts with cocycle again.
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|---|---|---|---|
| CN 200910213869 CN101720161B (en) | 2009-12-16 | 2009-12-16 | Plasma illuminating lamp control device |
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| CN104730300A (en) * | 2013-12-24 | 2015-06-24 | 苏州普源精电科技有限公司 | Measuring device with ALC |
| CN104734656A (en) * | 2013-12-24 | 2015-06-24 | 苏州普源精电科技有限公司 | Radio frequency signal source with amplitude modulation and automatic level control functions |
| CN111683426A (en) * | 2020-06-24 | 2020-09-18 | 中国电子科技集团公司第四十一研究所 | Radio frequency excitation signal power modulation circuit, method and device |
| CN112566297A (en) * | 2020-12-07 | 2021-03-26 | 清华四川能源互联网研究院 | Plasma light source driving system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4479406B2 (en) * | 2004-08-02 | 2010-06-09 | パナソニック電工株式会社 | Discharge lamp lighting device and lighting device |
| JP2006092906A (en) * | 2004-09-24 | 2006-04-06 | Ushio Inc | Rare gas fluorescent lamp device |
| US7923935B2 (en) * | 2005-04-21 | 2011-04-12 | Radiant Research Limited | Illumination control system for light emitters |
| CN101588661A (en) * | 2009-05-21 | 2009-11-25 | 扬州华菱科技发展有限公司 | High-power led lamp control circuit |
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| CN104730300A (en) * | 2013-12-24 | 2015-06-24 | 苏州普源精电科技有限公司 | Measuring device with ALC |
| CN104734656A (en) * | 2013-12-24 | 2015-06-24 | 苏州普源精电科技有限公司 | Radio frequency signal source with amplitude modulation and automatic level control functions |
| CN104734656B (en) * | 2013-12-24 | 2018-09-25 | 苏州普源精电科技有限公司 | A kind of radio-frequency signal source with amplitude modulation and automatic level control function |
| CN111683426A (en) * | 2020-06-24 | 2020-09-18 | 中国电子科技集团公司第四十一研究所 | Radio frequency excitation signal power modulation circuit, method and device |
| CN112566297A (en) * | 2020-12-07 | 2021-03-26 | 清华四川能源互联网研究院 | Plasma light source driving system and method |
| CN112566297B (en) * | 2020-12-07 | 2021-12-07 | 清华四川能源互联网研究院 | Plasma light source driving system and method |
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