CN101719465A - Method for manufacturing silicon substrate GaN-based semiconductor material - Google Patents
Method for manufacturing silicon substrate GaN-based semiconductor material Download PDFInfo
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- CN101719465A CN101719465A CN200910186565A CN200910186565A CN101719465A CN 101719465 A CN101719465 A CN 101719465A CN 200910186565 A CN200910186565 A CN 200910186565A CN 200910186565 A CN200910186565 A CN 200910186565A CN 101719465 A CN101719465 A CN 101719465A
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- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 239000010703 silicon Substances 0.000 title claims abstract description 96
- 239000000463 material Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 31
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 16
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 35
- 229910017083 AlN Inorganic materials 0.000 claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000001556 precipitation Methods 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- 238000002844 melting Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 22
- 239000010410 layer Substances 0.000 description 21
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 239000000155 melt Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 240000006028 Sambucus nigra Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The invention provides a method for manufacturing a silicon substrate GaN-based semiconductor material, aiming at solving the problem of re-melting a silicon surface by Ga in the process of extending GaN-based semiconductor material to improve the quality of the product and the production efficiency. The method comprises the following steps of: generating an aluminum nitride buffer layer on the silicon substrate in a reaction chamber of a first MOCVD specially for growing the aluminum nitride buffer layer, and taking out the aluminum nitride buffer layer after the step is completed to form a silicon substrate aluminum nitride template for later use; and placing the silicon substrate aluminum nitride template for later use into a reactor of a second MOCVD for growing a GaN-based semiconductor material to extend the GaN-based semiconductor material; and taking out the silicon substrate aluminum nitride template after the step is completed to form a silicon substrate GaN-based semiconductor material. The method can be applied to production manufacture of light-emitting diodes, diode lasers, power devices and the like.
Description
Technical field
The present invention relates to a kind of manufacture method of GaN base semiconductor material, particularly relating to a kind of is the manufacture method of the GaN base semiconductor material of growth substrates with silicon.
Background technology
Prior art is produced the GaN base semiconductor material on silicon substrate, all be in MOCVD equipment, from the bottom to top growing AIN and GaN epitaxial loayer successively on silicon substrate.
" semiconductor technology " 2006, the 31st volume, record the paper of a piece " research of substrate GaN-based material of Si and device " in the periodical of the 02nd phase, it at middle figure classification number is: TN316 Document code: A, article numbering: 1003-353X (2006) 02-0098-04.
Clearly put down in writing current at present a kind of method of on silicon substrate, producing the GaN base semiconductor material in this paper.
Because extension GaN on the Si substrate, its lattice mismatch is 17%, and the lattice mismatch in growth course will be introduced a large amount of dislocations; And bigger thermal expansion coefficient difference between Si substrate and the GaN also causes bigger thermal mismatching.Experimental data shows: the thermal coefficient of expansion of Si is 3.59 * 10-6K-1, and the thermal coefficient of expansion of GaN is 5.59 * 1010-6K-1, the two differs greatly, cause that epitaxial loayer will bear very big tensile stress in the process of lowering the temperature behind the high growth temperature, because the thickness of epitaxial loayer is much smaller than substrate thickness, so epitaxial loayer can crack.In addition, also there is polarity problems and Si, Ga problem such as counterdiffusion mutually.
The researcher has introduced the AlN resilient coating in order to obtain the material of high quality GaN base on silicon substrate between silicon and GaN, i.e. elder generation's growing AIN resilient coating, growing GaN epitaxial loayer on AlN then on silicon substrate.The manufacturing process that applicant of the present invention adopted in the past is summarized as follows for example:
1, puts into graphical Si substrate in the MOCVD reative cell;
2, under the high-temperature hydrogen environment, substrate is carried out surface treatment, remove the oxygen of organic substance and surface adsorption;
3, cooling then, ground floor growing AIN layer covers substrate surface, as substrate protective layer and prestressed layer;
4, then the growth of GaN epitaxial loayer is carried out in intensification;
5, growth is corresponding luminous or be applied to the extension functional layer (as: light-emitting diode, diode laser, power device etc.) of other field;
6, the epitaxial wafer growth is finished, and takes out from reative cell, and high temperature toasts reative cell, removes GaN sediment remaining in the reaction chamber environment, for epitaxial growth next time lays the foundation.
The growth of above entire device epitaxial structure is once finished in reative cell.
There are several apparent in view problems in the production method of above-mentioned silicon substrate epitaxial wafer:
1, Ga can form joining gold in surface of silicon to the melt back of Si, destroys the substrate surface lattice and arranges, and causes the extension wild effect, causes product quality to improve;
2, in the GaN epitaxial growth reaction chamber, after reaction finishes,, remove major part and be attached to the interior GaN of cavity though can clear up and high-temperature baking (bake) to the reaction response chamber, but still the attachments such as small portion of residual GaN in the inevitable reative cell.When carrying out next stove production, the GaN in the attachment can decompose at temperature-rise period, and deposits to the Si substrate surface, forms the melt back to substrate surface, causes the failure of epitaxial process.
In order to obtain higher-quality product, for the problems referred to above 2, the solution that can adopt is: after the reaction of each stove is finished, reative cell is cleaned.Because attachment is multiple material, be mainly GaN base material, after finishing, the production of each stove all needs thoroughly to clear up, remove the GaN sediment, for next stove epitaxial growth is prepared.This method improves product quality in the mode of sacrificing efficient, and it can't realize the high-efficiency stream equalization, makes production efficiency become very low, general every days 2～2.5 stove.And, frequently the reative cell accessory is changed, cleaned, the useful life and the stability of reative cell inner part (as graphite base, electric furnace) all there is adverse effect, and is unfavorable for the stability of producing.Carry out the growth from the AlN resilient coating to GaN main body epitaxial loayer in same reative cell, the GaN of inevitable reative cell is residual, thereby causes the production stability of Si substrate GaN and poor again problem, and the operation and maintenance of equipment is brought very big challenge.
Above situation explanation is if quality and production stability in order to improve product just must be sacrificed efficient and be improved production cost; If in order not influence production efficiency, just can only be tolerated under this kind reaction environment the deterioration of product quality and the raising of cost.
Summary of the invention
Problem to be solved by this invention is: the manufacture method that a kind of silicon substrate GaN-based semiconductor material is provided, this method is used for solving the process at extension GaN base semiconductor material, unstable and the low problem of production efficiency of the growth that Ga causes the silicon face melt back, with the quality that improves product with enhance productivity.
In order to solve the problems of the technologies described above, the present invention proposes a kind of manufacture method of silicon substrate GaN-based semiconductor material, comprising:
In the reative cell of first MOCVD that is specifically designed to the growing aluminum nitride resilient coating, on silicon substrate, generate aluminum nitride buffer layer, take out after finishing, it is standby to form silicon substrate aluminium nitride template;
Above-mentioned standby silicon substrate aluminium nitride template is put into the reative cell extension GaN base semiconductor material of second MOCVD that is specifically designed to the growing GaN base semiconductor material, take out after finishing, form silicon substrate GaN-based semiconductor material.
Preferably: first in the reative cell of first MOCVD, the organic pollution on elder generation's removing silicon substrate and the oxygen atom of absorption, and then carry out the growth of aluminum nitride buffer layer.Generally under the high-temperature hydrogen environment, the surface of substrate is handled.This processing helps reducing the interference impurity that produces in the subsequent reactions process, can improve the quality of product.
Preferably, the described process that generates aluminum nitride buffer layer on silicon substrate comprises:
Feed the organometallic aluminium source earlier at silicon substrate upper berth aluminium, at silicon face homogeneous precipitation layer of aluminum metal, feed aluminium source and ammonia simultaneously and react, precipitation generates aluminum nitride buffer layer on silicon substrate.The organometallic aluminium source is preferably the trimethyl aluminium source.The organometallic aluminium source can be decomposed in course of reaction, forms al deposition at substrate surface.
Preferably, the described process that generates aluminum nitride buffer layer on silicon substrate comprises:
Feed ammonia earlier;
And then feeding aluminium source and ammonia gas react, precipitation generates aluminum nitride buffer layer on silicon substrate.
Preferably: at growth individual layer aluminum nitride buffer layer or the nitride multilayer aluminium resilient coating under different growth parameter(s)s on the described silicon substrate.
Preferably: the growth temperature of described aluminum nitride buffer layer is at 500～1000 degrees centigrade.
Preferably: the thickness of described aluminium nitride is at 200～2000 dusts.Can't cover silicon fully if aluminium nitride is too thin; If too thick, in the temperature-fall period after growth is finished, the uneven contraction of aluminium nitride and Si can cause the AlN cracking, and the thickness of described aluminium nitride is 600～800 dusts more preferably.
Preferably: earlier silicon substrate is carried out the cutting composition, and then put into the reative cell of MOCVD.
Preferably: on silicon substrate, generate in the aluminum nitride buffer layer process, advanced horizontal high voltage growth, after carry out low-pressure growth.
The silicon substrate GaN-based semiconductor technology is compared Sapphire Substrate GaN base technology and still is in the starting stage, its properties of product are compared with the product of Sapphire Substrate technology to still have and are much remained the place of improving, its production technology and equipment and the Sapphire Substrate technology used all are consistent as far as possible, in the hope of obtain development faster from the Sapphire Substrate mature technique.But because the attribute difference of substrate material, in manufacturing process, the silicon substrate technology can not be applied mechanically the sapphire technology again fully, as the technology of extension GaN base semiconductor material on substrate that the present invention relates to.Directly apply mechanically the technology of Sapphire Substrate and in same stove, produce aluminium nitride and GaN base semiconductor material, finally cause the melt back of Ga, cause product quality to be subjected to very big influence silicon.In order to improve the quality of product, all be to focus on the improving technology of quantum well layer generally speaking, still, the influence to product quality can not be ignored Ga equally to the melt back phenomenon of silicon.
In improving the pursuit process of product quality, the present inventor proposes silicon substrate aluminium nitride form technology, it is the technology of the present invention, proposition is the special silicon substrate aluminium nitride template of producing in a reative cell, then in another reative cell on silicon substrate aluminium nitride template special growing GaN base semiconductor material.Such technology can make surface of silicon and Ga environment make a distinction, in the growing GaN base semiconductor material, the deposition Ga that adheres in the reative cell, in the course of reaction of next stove, after the decomposes, only contact the aluminium nitride on the silicon substrate aluminium nitride template, and then prevented the melt back of Ga silicon face.Because MOCVD equipment is divided the work, react attached to the attachment in the reative cell at every turn, it is the product of reaction, after the decomposes, combine together with unstrpped gas, participate in balanced reaction, can not influence the product quality of next stove, also need after reaction, not carry out very harsh cleaning reative cell.Therefore, the technology of the present invention has created the simple reaction environment of similar and a Sapphire Substrate technology for each course of reaction, has taken into account quality and production efficiency requirement to product, can produce more high-quality semi-conducting material and has better production efficiency.And; compare the technology of using before the inventor; no longer need the Ga in the strict cleaning reative cell residual; this helps protecting such as parts such as graphite base in the reative cell and electric furnaces, has improved the stability of reative cell, has prolonged the useful life of MOCVD upper-part; because MOCVD equipment price costliness; fault still less in longer useful life, means the reduction of production cost.The technology of the present invention can be used for fields such as light-emitting diode, diode laser, power device.
Description of drawings
Fig. 1 is a flow diagram of the present invention.
Fig. 2 A, Fig. 2 B, Fig. 2 C, Fig. 2 D show the production process of silicon substrate epitaxial wafer.
Embodiment
The invention provides a kind of manufacture method of silicon substrate GaN-based semiconductor material.
Referring to Fig. 2 and in conjunction with Fig. 1, manufacturing Ga base epitaxial wafer process is on silicon substrate: as Fig. 2 A, the composition cutting becomes substrat structure shown in Fig. 2 B on silicon substrate 1 earlier, forms groove 4 and deposition table 5 on silicon substrate 1.
As Fig. 2 C, in the reative cell of first MOCVD that is specifically designed to the growing aluminum nitride resilient coating, on silicon substrate 1, generate aluminum nitride buffer layer 2 then, take out after finishing, it is standby to form silicon substrate aluminium nitride template A.
As Fig. 2 D, the reative cell extension GaN base semiconductor material with above-mentioned standby silicon substrate aluminium nitride template A puts into second MOCVD that is specifically designed to the growing GaN base semiconductor material takes out the formation silicon substrate GaN-based semiconductor material after finishing.
The production of finishing a slice silicon substrate GaN-based semiconductor material needs two different MOCVD reative cells.A MOCVD equipment can have a reative cell that the reative cell of a plurality of MOCVD also can be arranged.
In view of present situation, having only the situation of a reative cell with a MOCVD equipment is example, first MOCVD equipment can be selected the MOCVD of the so low quantity manufacturing capacity of 7 machines for use, and second MOCVD equipment can be selected the MOCVD equipment of the so high quantity manufacturing capacity of 42 machines for use.This selection at first cost in view of the higher machine of equipment cost that hangs down the sheet machine is lower, and the time that time ratio that utilize to produce aluminium nitride is produced GaN base epitaxial loayer will be lacked this factor can be made in that to make the productivity ratio of aluminium nitride on the silicon substrate consistent with the productivity ratio of making the GaN base semiconductor material on aluminium nitride, to improve the result of final High-efficient Production as far as possible.
Based on above-mentioned condition, for the silicon substrate slice, thin piece of composition cutting, it is as follows that the present invention produces the embodiment one of method of silicon substrate GaN-based semiconductor material:
One, silicon substrate high-temperature hydrogen on the throne is handled: silicon substrate is put into first reative cell, under the atmosphere of higher relatively temperature and hydrogen, silicon substrate is carried out processing on the throne, with the organic pollution on the removing substrate and the oxygen atom of absorption.
Two, silicon substrate is on the throne finish dealing with after, reduce temperature, for growing aluminum nitride is prepared, the growth temperature of aluminium nitride is 500～1000 degrees centigrade.
Three, in order to realize of the transformation of Si lattice smoothly to the aluminium nitride lattice, can in first reative cell, feed online shop, trimethyl aluminium source aluminium, at surface of silicon homogeneous precipitation layer of aluminum metal, outstanding key and the aluminium of surperficial Si combine, and the outstanding key of surface silicon are converted to the outstanding key of aluminium.
Four, the growth of aluminium nitride: feed the aluminium source then, and ammonia gas react, deposition forms the aln buffer layer film, and the thickness of aluminium nitride is preferably 600～800 dusts at 200～2000 dusts, and this sentences thickness 400 dusts is example.
Five, behind the aluminium nitride growth ending, under protection of ammonia, near room temperature is taken out silicon substrate aluminium nitride template.
Six, then silicon substrate aluminium nitride template is placed in second reative cell, extension GaN base semiconductor material takes out in second reative cell after epitaxial wafer is finished, and second reative cell is carried out hyperthermia drying handle, and prepares next stove epitaxial growth.
Embodiment two:
The difference of comparing embodiment one is that above-mentioned steps three and step 4 become: feed ammonia earlier, form thin layer SiN, regrowth AlN, thickness 1200 dusts.
Embodiment three:
The difference of comparing embodiment one is that above-mentioned steps three and step 4 become: on silicon substrate, generate in the aluminum nitride buffer layer process, advanced horizontal high voltage growth, after carry out low-pressure growth.
Embodiment four:
The difference of comparing embodiment one is that above-mentioned steps three becomes with step 4: at growth individual layer aluminum nitride buffer layer or the nitride multilayer aluminium resilient coating under different growth parameter(s)s on the described silicon substrate.
The technology of the present invention is compared with technology before has following obvious advantage: 1, be specifically designed in the reative cell of growing AIN growth, stopped adhering to of the interior Ga metal of reative cell fully, thereby do not had in the substrate processing process destruction of Ga metal pair substrate; 2, the process of extension GaN is from the AlN template, bake substrate and early growth period, and the Ga metal substrate that decomposition is come out because the most surperficial one deck of template is AlN, can protect the Si substrate to avoid the melt back by Ga at template surface; 3, adopt the method for twice extension of silicon substrate template, with respect to a direct extension on the silicon substrate, the cleaning tolerance of reative cell is bigger, and cleaning is simple, the time is short, has improved production efficiency and has produced yield; 4, shortened the production time, the production efficiency of raising is very obvious.
Claims (11)
1. the manufacture method of a silicon substrate GaN-based semiconductor material comprises:
In the reative cell of first MOCVD that is specifically designed to the growing aluminum nitride resilient coating, on silicon substrate, generate aluminum nitride buffer layer, take out after finishing, it is standby to form silicon substrate aluminium nitride template;
Above-mentioned standby silicon substrate aluminium nitride template is put into the reative cell extension GaN base semiconductor material of second MOCVD that is specifically designed to the growing GaN base semiconductor material, take out after finishing, form silicon substrate GaN-based semiconductor material.
2. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1, it is characterized in that: earlier in the reative cell of first MOCVD, the organic pollution on elder generation's removing silicon substrate and the oxygen atom of absorption, and then carry out the growth of aluminum nitride buffer layer.
3. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1 is characterized in that the described process that generates aluminum nitride buffer layer on silicon substrate comprises:
Feed the organometallic aluminium source earlier at silicon substrate upper berth aluminium, at silicon face homogeneous precipitation layer of aluminum metal, feed aluminium source and ammonia simultaneously and react, precipitation generates aluminum nitride buffer layer on silicon substrate.
4. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 3, it is characterized in that: described organometallic aluminium source is a trimethyl aluminium.
5. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1 is characterized in that the described process that generates aluminum nitride buffer layer on silicon substrate comprises:
Feed ammonia earlier;
And then feeding aluminium source and ammonia gas react, precipitation generates aluminum nitride buffer layer on silicon substrate.
6. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1 is characterized in that: at growth individual layer aluminum nitride buffer layer or the nitride multilayer aluminium resilient coating under different growth parameter(s)s on the described silicon substrate.
7. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1, it is characterized in that: the growth temperature of described aluminum nitride buffer layer is at 500～1000 degrees centigrade.
8. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1, it is characterized in that: the thickness of described aluminium nitride is at 200～2000 dusts.
9. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 8, it is characterized in that: the thickness of described aluminium nitride is at 600～800 dusts.
10. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1 and 2 is characterized in that: earlier silicon substrate is carried out the cutting composition, and then put into the reative cell of MOCVD.
11. the manufacture method of silicon substrate GaN-based semiconductor material according to claim 1 is characterized in that: on silicon substrate, generate in the aluminum nitride buffer layer process, advanced horizontal high voltage growth, after carry out low-pressure growth.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2013010828A1 (en) | 2011-07-18 | 2013-01-24 | Epigan Nv | Method for growing iii-v epitaxial layers |
| CN104018214A (en) * | 2014-06-10 | 2014-09-03 | 广州市众拓光电科技有限公司 | Rectangular patterned Si substrate AlN template for GaN semiconductor material epitaxy and preparation method of rectangular patterned Si substrate AlN template |
| WO2016023352A1 (en) * | 2014-08-11 | 2016-02-18 | 厦门市三安光电科技有限公司 | Gallium nitride light emitting diode and manufacturing method therefor |
| CN105742160A (en) * | 2016-04-11 | 2016-07-06 | 杭州士兰微电子股份有限公司 | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013010828A1 (en) | 2011-07-18 | 2013-01-24 | Epigan Nv | Method for growing iii-v epitaxial layers |
| CN104018214A (en) * | 2014-06-10 | 2014-09-03 | 广州市众拓光电科技有限公司 | Rectangular patterned Si substrate AlN template for GaN semiconductor material epitaxy and preparation method of rectangular patterned Si substrate AlN template |
| WO2016023352A1 (en) * | 2014-08-11 | 2016-02-18 | 厦门市三安光电科技有限公司 | Gallium nitride light emitting diode and manufacturing method therefor |
| CN105742160A (en) * | 2016-04-11 | 2016-07-06 | 杭州士兰微电子股份有限公司 | Fabrication method of GaN epitaxial wafer and device for fabricating GaN epitaxial wafer |
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