CN101718910B - Static vibrating mirror and manufacturing method thereof - Google Patents

Static vibrating mirror and manufacturing method thereof Download PDF

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Publication number
CN101718910B
CN101718910B CN2009102372991A CN200910237299A CN101718910B CN 101718910 B CN101718910 B CN 101718910B CN 2009102372991 A CN2009102372991 A CN 2009102372991A CN 200910237299 A CN200910237299 A CN 200910237299A CN 101718910 B CN101718910 B CN 101718910B
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galvanometer
layer
girder
semi
substrate
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CN101718910A (en
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陈庆华
吴文刚
杜博超
贾鲲鹏
张海霞
夏雨
郝一龙
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Peking University
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Peking University
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Abstract

The invention relates to a static vibrating mirror and a manufacturing method thereof. The static vibrating mirror comprises a substrate, a driving layer and a vibrating mirror layer from bottom up, and at least the surface of the substrate is insulative; the driving layer comprises a driving electrode, landing electrodes, a bonding pad and a lead, is used for providing driving voltage and connecting the external pins, is arranged at two sides of the centre line with the centre line of the vibrating mirror as the symmetric line and is connected with the vibrating mirror layer by bonding, so that the landing electrodes have equivalent potentials with a cantilever beam of the vibrating mirror layer; the vibrating mirror layer comprises a vibrating mirror, a bracket and the cantilever beam, two ends of the vibrating mirror are connected with the cantilever beam, the bracket is fixed on the substrate, the cantilever beam is connected with the bracket, is of a fishbone-shaped structure, is provided with a plurality of tooth-shaped sub-beams of different lengths whose tails can contact with the landing electrodes so as to allow the vibrating mirror to twist. The inventive static vibrating mirror has simple manufacturing technique, low cost and high reliability.

Description

Electrostatic vibration mirror and preparation method thereof
Technical field
The present invention relates to the laser scanner technique field, relate in particular to a kind of electrostatic vibration mirror and preparation method thereof.
Background technology
The extremely strong directivity of laser makes it just can not keep the quality of luminous point by lens in a suitable segment distance.In conjunction with the scanning device that laser is scanned, can develop a series of Laser Devices, as laser projection, bar code scan, stage laser etc.Laser scanning equipment in the past generally all uses scanning prism or electromagnetism galvanometer system, because of its design feature, in the time will realizing multi-dimensional scanning, plural rotating prism need be arranged, or just can finish scanning, cause total system volume heaviness with another galvanometer acting in conjunction, complex structure, effect is low, and is difficult to realize high-velocity scanning, thereby limits the development of such Laser Devices.
Adopt microelectromechanical systems (Micro-Electro-Mechanical Systems, MEMS) volume is little, simple in structure, energy consumption is low because of having, high sweep velocity and steady performance for the electrostatic vibration mirror realized of technology, shows and replaces the developing direction that the conventional laser scanning device becomes the quick laser scanning device of miniwatt field just gradually.At present, successfully develop a series of high-performance equipments based on this device technology, as bar code scan and laser projection etc., annual value of production reaches multi-million dollar.Most MEMS electrostatic vibration mirrors mainly are made of movable minute surface, semi-girder and electrode.Galvanometer in the course of the work, when the overtension of drive electrode, or when being subjected to certain great disturbance, galvanometer might be crossed the critical point of electrostatic force and semi-girder screen resilience, caused adhesion or discharge to burn galvanometer and inhale rapidly to drive electrode, thereby cause component failure.For this reason, need the Voltage stabilizing module of supporting anti-voltage overshoot and under galvanometer, increase adherent layer, therefore will improve the complexity of whole cost and manufacturing process.
Summary of the invention
The purpose of this invention is to provide a kind of electrostatic vibration mirror and preparation method thereof, the electrostatic vibration mirror manufacturing process is simple, cost is low, and the reliability height can overcome the deficiencies in the prior art.
For achieving the above object, the present invention adopts following technical scheme.
A kind of electrostatic vibration mirror provided by the invention comprises substrate, Drive Layer, galvanometer layer from the bottom to top, and described substrate is surface insulation at least; Described Drive Layer comprises: drive electrode, landing electrode, bonding point and lead, described drive electrode is used to provide the connection of driving voltage and external terminal, center line with galvanometer is that line of symmetry is arranged at described center line both sides, is used to control the vibration of a dimension of galvanometer; Described landing electrode is that line of symmetry is arranged at described center line both sides with described center line in twos, and links to each other with described galvanometer layer by bonding, makes described landing electrode identical with the semi-girder current potential of described galvanometer layer; Described galvanometer layer comprises: galvanometer, support and semi-girder, described galvanometer two ends are connected with described semi-girder, described support is fixed on the described substrate, described semi-girder is connected with described support, be the fishbone structure, have end and can touch the sub-beam of dentation of many different lengths of described landing electrode, the described galvanometer that can allow to connect produces twisting.
Wherein, described galvanometer layer comprises at least with respect to symmetrically arranged two semi-girders of described galvanometer.
Wherein, the girder line of described two semi-girders and the central lines of described galvanometer, sub-beam is vertical with described girder.
Wherein, the girder line of described two semi-girders and the central lines of described galvanometer, sub-beam is vertical with described girder, and described sub-beam end is a Y shape structure.
Wherein, the girder line of described two semi-girders and the central lines of described galvanometer, sub-beam and described girder keep certain angle of inclination.
Wherein, the girder line of described two semi-girders and the central lines of described galvanometer, sub-beam is a foldable structure vertical with described girder or the inclination certain angle.
The present invention also provides a kind of method for making of electrostatic vibration mirror, and the method comprising the steps of:
S1. make the substrate of surface insulation at least:
S2. described substrate thickness direction is made mask in described substrate upper edge, and uses surface film technology that metal or conductive material are made Drive Layer;
S3. remove mask, and making making galvanometer layer sacrifice layer on the substrate of described Drive Layer;
S4. use surface film technology that metal or conductive material are made the galvanometer layer, and use mask, described galvanometer layer is carried out the shaping structures etching, it is formed set shape;
S5. remove described sacrifice layer and mask.
Wherein, silicon dioxide or uses conduction or semiconductor material to carry out insulating and handles as described substrate as described substrate among the step S1.
Wherein, use P type or N type silicon materials as described substrate among the step S1.
Wherein, among the step S2, on described P type silicon substrate, make mask, in described P type silicon substrate, mix N type impurity, form described Drive Layer.
Wherein, the layer of galvanometer described in step S3 sacrifice layer can place the described substrate surface that makes Drive Layer earlier, and planarization is made forming again by mask etching then.
Wherein, also comprise among the step S4: on described conductive material, generate layer of metal by surface film technology, to increase the reflectivity of galvanometer.
The electrostatic vibration mirror that the present invention proposes, when galvanometer is crossed the critical point of electrostatic force and semi-girder screen resilience, the rigidity of semi-girder can be adjusted automatically according to the degree that galvanometer is crossed critical point, the critical point of the screen resilience of adjusted semi-girder is greater than electrostatic force, galvanometer will automatically move back to home, thereby avoid component failure; Need not Voltage stabilizing module and adherent layer, reduced the cost of manufacture of electrostatic vibration mirror effectively, reduced the volume of galvanometer system; Simultaneously, electrostatic vibration mirror of the present invention is simple in structure, is beneficial to realize the integrated of scanning system, owing to adopt static driven and use the semi-girder supporting construction, make application scanning system of the present invention have high-velocity scanning, low-power consumption does not have the little premium properties that waits of mechanical friction and wear substantially.
Description of drawings
Fig. 1 (a)-Fig. 1 (c) is the electrostatic vibration mirror structural representation according to one embodiment of the present invention;
Fig. 2 (a)-Fig. 2 (d) is the structural representation according to the electrostatic vibration mirror semi-girder of one embodiment of the present invention;
Fig. 3 (a)-Fig. 3 (f) is the making synoptic diagram according to Drive Layer in the electrostatic vibration mirror method for making of one embodiment of the present invention;
Fig. 4 (a)-Fig. 4 (e) is the making synoptic diagram according to galvanometer layer in the electrostatic vibration mirror method for making of one embodiment of the present invention;
Fig. 5 (a)-Fig. 5 (c) adopts chemical-mechanical polishing to simplify the making synoptic diagram of technology according to galvanometer layer in the electrostatic vibration mirror method for making of one embodiment of the present invention.
Embodiment
Electrostatic vibration mirror that the present invention proposes and preparation method thereof is described in detail as follows in conjunction with the accompanying drawings and embodiments.
Shown in Fig. 1 (a)-Fig. 1 (c), wherein, Fig. 1 (a) is according to the three-dimensional discrete figure of the electrostatic vibration mirror of one embodiment of the present invention, Fig. 1 (b) is the electrostatic vibration mirror structural perspective according to one embodiment of the present invention, Fig. 1 (c) is the electrostatic vibration mirror section of structure according to one embodiment of the present invention, and electrostatic vibration mirror of the present invention comprises:
Substrate 10: shown in the slanted bar line, substrate 10 is surface insulation at least among the figure, is the carrier and the manufacturing platform of whole galvanometer, and other all structures all are made on the substrate 10.Preferably, by good insulating, the material that is easy to prepare and cuts is made, and the material that is suitable for can be but be not limited to glass (silicon dioxide).Substrate 10 can also be made through insulation processing by other conductive materials, as silicon substrate is carried out surface oxidation, makes the silicon substrate that there is silicon dioxide insulating layer on the surface, also can be additive method.As selection,, then can directly use P type silicon as substrate 10 if drive electrode is directly mixed the method making that substrate forms reverse PN junction by impurity.
Drive Layer 20: among the figure shown in the black, Drive Layer is by drive electrode 200, landing electrode 201, bonding point 202 and be connected lead and form.
Drive Layer 20 is brake structures of whole galvanometer, can produce different electrostatic force to galvanometer by apply different voltage method on two drive electrodes 200, thereby make galvanometer produce the deflection of different angles and direction.Two drive electrodes 200 are the vibration that both sides that line of symmetry is arranged at center line are used to control a dimension (degree of freedom) of galvanometer with the center line of galvanometer (as the dotted line at galvanometer center among Fig. 1 (a) and Fig. 1 (b)).
Landing electrode 201 is protection structures of galvanometer.The electrostatic vibration mirror of present embodiment has four landing electrodes 201, and the center line with galvanometer is the both sides that the line of symmetry symmetry is arranged on center line in twos, the right and left of drive electrode 200.When the overtension of drive electrode 200, or when being subjected to certain great disturbance, galvanometer 300 might be crossed the critical point of electrostatic force and semi-girder screen resilience, be caused adhesion or discharge to burn galvanometer and inhale rapidly to drive electrode 200.At this moment,, can avoid contacting of galvanometer 300 and drive electrode 200, also just avoid the damage of galvanometer 300 by the acting in conjunction of landing electrode 201 and variable torsional stiffness semi-girder.
Drive Layer 20 should select for use electric conductivity good, the simple material of technology, and this material can be but be not limited to argent, aluminium, also can be other material, as tin indium oxide (ITO) etc.As selection, Drive Layer 20 also can directly make on substrate 10 by mixing an amount of N type impurity such as P and As etc. by pattern mask on the P type silicon substrate material.
Galvanometer layer 30: among the figure shown in the check, but galvanometer layer 30 is made of galvanometer 300, support 301 and the semi-girder of reflector laser.
Galvanometer layer 30 is most important structures, by making by reflective conductive material, is used for reflected illumination laser thereon, and when galvanometer 300 minute surfaces were subjected to electrostatic forcing deflection, reflector laser is deflection thereupon.Galvanometer 300 requires smooth as much as possible bright and clean, and its two ends are connected with semi-girder.
Support 301 is fixed on the substrate 10, and fixed part can also be used as bonding point 202 simultaneously, is connected with external terminal by lead-in wire.
Semi-girder links to each other with support 301, has certain elasticity, allows galvanometer 300 to produce twisting, is a kind of fishbone structure, has the sub-beam of dentation of many different lengths.Do the time spent when being subjected to external force, can torsional deflection, so that necessary torsional capacity and screen resilience to be provided.When the overtension of drive electrode 200, or when being subjected to certain great disturbance, galvanometer 300 might be crossed the critical point of electrostatic force and semi-girder screen resilience, and be inhaled to drive electrode 200 rapidly.At this moment, the sub-beam end of a dentation of semi-girder can touch landing electrode 201 and support galvanometer 300.Therefore, the effective length of semi-girder changes, thereby the torsional rigidity of semi-girder changes, the semi-girder screen resilience will resilience take place above electrostatic force, thereby has avoided contacting of galvanometer 300 and drive electrode 200, has also just avoided the damage of galvanometer system.Simultaneously,, guaranteed that landing electrode 201 is identical with the semi-girder current potential, avoided it inter-adhesive because support 301 contacts with landing electrode 201.The sub-beam of the dentation of the multiple different length on the semi-girder makes semi-girder have the ability of anti-multiple degree Pull-in effect.
Stable when keeping the deflection of mirror body and the resonance that reduces galvanometer 300, a galvanometer 300 should have at least 2 semi-girders to support, but is not limited to 2.The shape of semi-girder of the present invention can be but be not limited to the shape shown in Fig. 2 a, black part is divided into galvanometer 300 structures among the figure, check partly is a cantilever beam structure, two semi-girder symmetries be arranged at galvanometer 300 both sides, girder line and galvanometer 300 central lines, girder is provided with the sub-beam of the dentation vertical with girder.Shown in Fig. 2 b, the sub-beam end of dentation is a Y shape structure, and this structure is when coming in contact with landing electrode 201, and semi-girder is more stable.Shown in Fig. 2 c, the sub-beam of the dentation of semi-girder also can be with girder and keeps certain angle of inclination.Shown in Fig. 2 d, the sub-beam of cantilever can also be a foldable structure vertical with girder or the inclination certain angle.
Fig. 3-5 is the job operation according to the electrostatic vibration mirror of one embodiment of the present invention.This is a kind of manufacture method based on MEMS (micro electro mechanical system) (MEMS) technology.Making step has only provided diagrammatic cross-section, so that how explanation makes Drive Layer and galvanometer layer on substrate better.
The inventive method comprises step:
S1. make the substrate of surface insulation at least:
Substrate 10 can be good insulating, be easy to preparation and cutting insulator, as glass (silicon dioxide) etc.; Also can make through insulation processing, as oxidation or deposition insulating layer etc. by other conductive materials.As selection,, then can directly use P type silicon materials as substrate 10 if Drive Layer 20 is direct by mixing the method making that forms reverse PN junction into substrate.
S2. make mask at substrate 10 upper edge substrates 10 thickness directions, and use surface film technology that metal or conductive material are made Drive Layer 20:
Shown in Fig. 3 a, at first, on substrate 10, make pattern mask; This layer mask can be a photoresist, and perhaps other expendable material is as oxide.Then, shown in Fig. 3 b, use surface processing technique, make Drive Layer, this technology can be evaporation, sputter, plating or additive method, remove mask then, other parts of the unwanted Drive Layer of mask can be come along and remove, form required Drive Layer 20, Drive Layer 20 is unsuitable blocked up, after finishing, can obtain Drive Layer 20 as Fig. 3 c.As selection, also can use P type silicon substrate, on this substrate 10, make pattern mask, use doping process in P type silicon substrate 10, to mix N type impurity such as the P and the As etc. of debita spissitudo then, make to form reverse PN junction around mixing the zone, make it form Drive Layer 20 circuit.
S3. remove mask, and on the substrate 10 that makes Drive Layer 20, make galvanometer layer sacrifice layer;
S4. use surface film technology that metal or conductive material are made the galvanometer layer, and use mask, galvanometer layer 30 is carried out the shaping structures etching, it is formed set shape;
Fig. 4 a-Fig. 4 e has represented a kind of method for making of galvanometer layer.Shown in Fig. 4 a, at first on the substrate 10 that makes Drive Layer 20, make galvanometer layer sacrifice layer 401.This galvanometer layer sacrifice layer 401 can directly make with photoresist to be made, also can grow sacrifice layer earlier on the substrate 10 that makes Drive Layer 20, planarization is made by mask etching more then, on galvanometer layer sacrifice layer 401, use surface processing technique then, make galvanometer layer 30.Galvanometer layer sacrifice layer 401 can use PSG phosphorosilicate glass etc.
As Fig. 4 d, on the galvanometer layer 30 that makes, make one deck pattern mask again, and galvanometer layer 30 is carried out etching with this pattern mask.Can obtain the structure shown in Fig. 4 e after finishing,, can carry out chemical-mechanical (CMP) polishing galvanometer layer 30 in order to reach better reflecting effect.
S5. remove all galvanometer layer sacrifice layer 401 and mask, can obtain the final finished of electrostatic vibration mirror of the present invention, as shown in Figure 1.
As selection, if galvanometer layer 30 need be done chemical-mechanical polishing, the making of galvanometer layer 30 then can be used the method for making shown in Fig. 5 a-Fig. 5 c so, is the operation of step S5 to deduct etching galvanometer layer.At first, shown in Fig. 4 b, directly on the substrate 10 that makes Drive Layer 20, make galvanometer layer sacrifice layer 401 among the step S3.Shown in Fig. 5 a, and then make another layer mask 501 above the galvanometer layer sacrifice layer 401 more then.The figure of the figure of this mask 501 and Fig. 4 e just in time opposite (promptly complementary), thickness is slightly thicker than required galvanometer layer 30, and its material can be a photoresist etc., also can be the material the same with galvanometer layer sacrifice layer 401.Then, shown in Fig. 5 b, make galvanometer layer 30 on this galvanometer layer sacrifice layer 401, the manufacture craft of this technology and Drive Layer 20 is just the same, and its thickness should be slightly larger than desired thickness.Subsequently with its whole chemical-mechanical polishing (CMP) that carries out.When galvanometer layer 30 was polished to desired thickness, because the thickness of mask 501 is slightly thicker than required galvanometer layer 30, and the unwanted galvanometer layer 30 on it had all been ground away with the slightly thick mask that goes out galvanometer layer 30, and the then only remaining galvanometer layer segment that needs is shown in Fig. 5 c.Remove all galvanometer layer sacrifice layer 401 and mask 501 at last, can obtain the final finished of this electrostatic vibration mirror.
Above embodiment only is used to illustrate the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from the spirit and scope of the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.

Claims (12)

1. an electrostatic vibration mirror comprises substrate, Drive Layer, galvanometer layer from the bottom to top, it is characterized in that,
Described substrate is surface insulation at least;
Described Drive Layer comprises: drive electrode, landing electrode, bonding point and lead, described drive electrode is used to provide the connection of driving voltage and external terminal, center line with galvanometer is that line of symmetry is arranged at described center line both sides, is used to control the vibration of a dimension of galvanometer; Described landing electrode is that line of symmetry is arranged at described center line both sides with described center line in twos, and links to each other with described galvanometer layer by bonding, makes described landing electrode identical with the semi-girder current potential of described galvanometer layer;
Described galvanometer layer comprises: galvanometer, support and semi-girder, described galvanometer two ends are connected with described semi-girder, described support is fixed on the described substrate, described semi-girder is connected with described support, described semi-girder is the fishbone structure, have end and can touch the sub-beam of dentation of many different lengths of described landing electrode, the described galvanometer that can allow to connect produces twisting.
2. electrostatic vibration mirror as claimed in claim 1 is characterized in that, described galvanometer layer comprises at least with respect to symmetrically arranged two semi-girders of described galvanometer.
3. electrostatic vibration mirror as claimed in claim 2 is characterized in that, the girder line of described two semi-girders and the central lines of described galvanometer, and sub-beam is vertical with described girder.
4. electrostatic vibration mirror as claimed in claim 2 is characterized in that, the girder line of described two semi-girders and the central lines of described galvanometer, and sub-beam is vertical with described girder, and described sub-beam end is a Y shape structure.
5. electrostatic vibration mirror as claimed in claim 2 is characterized in that, the girder line of described two semi-girders and the central lines of described galvanometer, and sub-beam and described girder keep certain angle of inclination.
6. electrostatic vibration mirror as claimed in claim 2 is characterized in that, the girder line of described two semi-girders and the central lines of described galvanometer, and sub-beam is a foldable structure vertical with described girder or the inclination certain angle.
7. the method for making of an electrostatic vibration mirror, the method comprising the steps of:
S1. make the substrate of surface insulation at least:
S2. described substrate thickness direction is made mask in described substrate upper edge, and uses surface film technology that conductive material is made Drive Layer;
S3. remove mask, and making making galvanometer layer sacrifice layer on the substrate of described Drive Layer;
S4. use surface film technology that conductive material is made the galvanometer layer, and use mask, described galvanometer layer is carried out the shaping structures etching, it is formed set shape;
S5. remove described sacrifice layer and mask;
Wherein, Drive Layer among the step S2 comprises: drive electrode, landing electrode, bonding point and lead, described drive electrode is used to provide the connection of driving voltage and external terminal, center line with galvanometer is that line of symmetry is arranged at described center line both sides, is used to control the vibration of a dimension of galvanometer; Described landing electrode is that line of symmetry is arranged at described center line both sides with described center line in twos, and links to each other with described galvanometer layer by bonding, makes described landing electrode identical with the semi-girder current potential of described galvanometer layer;
Described setting among the step S4 is shaped as: the galvanometer layer of formation comprises: galvanometer, support and semi-girder, described galvanometer two ends are connected with described semi-girder, described support is fixed on the described substrate, described semi-girder is connected with described support, described semi-girder is the fishbone structure, have end and can touch the sub-beam of dentation of many different lengths of described landing electrode, the described galvanometer that can allow to connect produces twisting.
8. the method for making of electrostatic vibration mirror as claimed in claim 7 is characterized in that, silicon dioxide or uses conduction or semiconductor material to carry out insulating and handles as described substrate as described substrate among the step S1.
9. the method for making of electrostatic vibration mirror as claimed in claim 7 is characterized in that, uses P type or N type silicon materials as described substrate among the step S1.
10. the method for making of electrostatic vibration mirror as claimed in claim 9 is characterized in that, among the step S2, makes mask on described P type silicon substrate, mixes N type impurity in described P type silicon substrate, forms described Drive Layer.
11. the method for making of electrostatic vibration mirror as claimed in claim 7 is characterized in that, the layer of galvanometer described in step S3 sacrifice layer places the described substrate surface that makes Drive Layer earlier, and planarization is made forming again by mask etching then.
12. the method for making of electrostatic vibration mirror as claimed in claim 7 is characterized in that, also comprises among the step S4: on described conductive material, generate layer of metal by surface film technology, to increase the reflectivity of galvanometer.
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CN104459997A (en) * 2014-12-02 2015-03-25 深圳市盛喜路科技有限公司 MEMS tunable optical driver and manufacturing method
US10841548B2 (en) 2016-03-01 2020-11-17 Funai Electric Co., Ltd. Oscillating mirror element and projector
WO2018092104A1 (en) 2016-11-20 2018-05-24 Unispectral Ltd. Tunable mems etalon devices
WO2021193669A1 (en) * 2020-03-25 2021-09-30 パナソニックＩｐマネジメント株式会社 Optical reflector element and optical reflector system

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