CN101713064A - Preparation process for depositing discontinuous NiTi SMA film on PZT base body - Google Patents
Preparation process for depositing discontinuous NiTi SMA film on PZT base body Download PDFInfo
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- CN101713064A CN101713064A CN200910228964A CN200910228964A CN101713064A CN 101713064 A CN101713064 A CN 101713064A CN 200910228964 A CN200910228964 A CN 200910228964A CN 200910228964 A CN200910228964 A CN 200910228964A CN 101713064 A CN101713064 A CN 101713064A
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Abstract
The invention relates to a preparation process for depositing a discontinuous NiTi SMA film on a PZT base body, which is characterized by comprising the following four steps of: 1. carrying out surface cleaning processing on a PZT sheet base body; 2. tightly coating the PZT base body by using a shield plate with a through hole structure so as to expose the PZT base body in the through hole; 3. depositing the NiTi SMA film on the surface of a PZT by adopting a magnetic control sputtering method; and 4. processing a finished material by crystallization. The discontinuous NiTi SMA film is deposited on the PZT in a magnetic control sputtering way by adopting the shield plate with the through hole structure, and the NiTi SMA film in an isometric crystal structure state is formed by crystallization processing. The invention changes the directional cylindrical crystal tissue structure state of the NiTi SMA film deposited on the PZT base body by the magnetic control sputtering method, and improves the plasticity and the toughness of the NiTi SMA film and the effect of the NiTi SMA on reinforcing the toughness of the PZT.
Description
[technical field]
The present invention relates to the preparation technology of NiTi SMA film, control the preparation technology of magnetron sputtering method depositing discontinuous NiTi SMA film on particularly a kind of ferroelectric ceramic(s) PZT matrix by cover plate.
[background technology]
Pb (Zr Ti) O
3(PZT) as a kind of ferroelectric material of excellent performance, it is big to use potential quality.But, because PZT is a stupalith, poor toughness, fragility is big, thereby its range of application is subjected to serious restriction.In the PZT surface, it is compound that NiTi SMA and PZT are carried out, and by the toughness of NiTi SMA reinforcement PZT, can expand the Application Areas of PZT with NiTi shape memory alloy (NiTi SMA) thin film deposition for the employing magnetron sputtering method.Yet when NiTiSMA was deposited on the PZT matrix, NiTi SMA film was organized and is generally presented directed column crystal state, and this N state iTi SMA film plastic, poor toughness cause the effect of NiTi SMA reinforcement PZT flexible not obvious.How to improve the directed columanar structure of NiTi SMA film structural state and be magnetron sputtering method deposition NiTi SMA film and prepare and highlight the major issue that PZT and the basic PZT/NiTi SMA of NiTi SMA performance advantage complementary PZT matrix material are faced.This problem is effectively solved so far as yet.
[summary of the invention]
The objective of the invention is in order to solve prior art problems, and provide a kind of on the PZT matrix preparation technology of depositing discontinuous NiTi SMA film, this technology is by the cover plate control magnetron sputtering method depositing discontinuous NiTi SMA film of through-hole structure, thereby change the directed columanar structure of magnetron sputtering method deposition NiTi SMA film structural state on the PZT matrix, improve the moulding of NiTi SMA film, toughness, improve NiTi SMA reinforcement PZT flexible effect.
The present invention addresses the above problem the preparation technology that the scheme that is adopted is a depositing discontinuous NiTi SMA film on a kind of PZT matrix of design.It may further comprise the steps:
(1) PZT thin slice matrix surface clean;
(2) use cover plate closely to coat the PZT matrix, make the through hole expose the PZT matrix with one or more through holes;
(3) adopt magnetron sputtering method at PZT surface deposition NiTi SMA film;
(4) crystallization is handled and is become a useful person.
The invention has the advantages that, employing has cover plate magnetron sputtering deposition discontinuous NiTi SMA film on PZT of through-hole structure, handle by crystallization again and form NiTi SMA film, solved problem with directed columanar structure structure NiTi SMA film plasticity and poor toughness with equiaxed grain structure structural state.
[description of drawings]
Fig. 1 is preparation technology's schema of depositing discontinuous NiTi SMA film on the PZT matrix;
Fig. 2 is the equiax crystal shape micro-structure diagram of NiTi SMA film.
Be described in detail with reference to accompanying drawing below in conjunction with embodiments of the invention.
[embodiment]
The present invention deposits on the PZT matrix has the preparation technology of discontinuous NiTi SMA film, is made up of following four steps as shown in Figure 1.
The first step, PZT thin slice matrix surface clean, matrix surface clean are with ultrasonic cleaner the PZT matrix surface to be carried out ultrasonic cleaning to handle.Described PZT matrix is Zr and the molar fraction ratio of Ti is 55～58: 45～42 ferroelectric ceramic(s) PZT.
In second step, the cover plate that will have through-hole structure coats the PZT matrix, and place, cover plate hole exposes the PZT matrix.Cover plate has a plurality of through holes, and the single hole largest hole area on the cover plate is 7mm
2, the minimum aperture back gauge between the Kong Yukong is 1mm, and does not use any binding agent between cover plate and the PZT matrix.
In the 3rd step, adopt magnetron sputtering method at PZT surface deposition NiTi SMA film.Magnetron sputtering method wherein is to adopt the high vacuum magnetic control sputtering device, in: ar pressure 1.0～1.5Pa, 100～150 ℃ of substrate temperatures, sputtering power 120～160W, argon flow amount 8～12sccm, target-substrate distance 50～80mm and back of the body end vacuum tightness 2.0～7.0 * 10
-5Under the Pa condition, on the PZT matrix, deposit discontinuous NiTi SMA film.Described at PZT matrix surface deposition NiTi SMA film, the target that uses is Ti-50～52at%NiTi SMA.
In the 4th step, crystallization is handled and is become a useful person.Crystallization handles that to become a useful person be to deposit material heat treated under argon shield of NiTi SMA film, is heated to 400～600 ℃ with the heat-up rate of 4～8 ℃/min, and isothermal keeps 30～40min, furnace cooling behind the isothermal.This step forms the NiTiSMA film with equiaxed grain structure structural state on the PZT matrix.
Embodiment: magnetron sputtering discontinuous NiTi SMA film is made up of following four steps on ferroelectric ceramic(s) PZT matrix:
The first step: PZT thin slice matrix surface clean.To PZT matrix surface clean is with ultrasonic cleaner the PZT matrix surface to be carried out ultrasonic cleaning to handle, and removes greasy dirt.The PZT matrix is Zr and Ti molar fraction ratio is 58: 42 ferroelectric ceramic(s) PZT.
Second step: the cover plate with through-hole structure coats the PZT matrix.The cover plate that employing has through-hole structure closely coats the PZT matrix, and place, cover plate hole exposes the PZT matrix, does not use any binding agent between cover plate and the PZT matrix.Cover plate is the thick aluminium sheet of 0.1mm, the wide 2mm in rectangular through-hole hole, long 3.5mm, and rectangular opening is arranged in parallel, pitch of holes 6mm.
The 3rd step adopted magnetron sputtering method at PZT surface deposition NiTi SMA film.Adopt the high vacuum magnetic control sputtering device under ar pressure 1.5Pa, 150 ℃ of substrate temperatures, sputtering power 160W, argon flow amount 12sccm, target-substrate distance 80mm and back of the body end vacuum tightness 7.0 * 10-5Pa condition, on the PZT matrix, deposit discontinuous NiTi SMA film.
The target that adopts magnetron sputtering method to use is Ti-51at%NiTiSMA.
The 4th step: crystallization is handled and is become a useful person.With the material that deposits the NiTiSMA film under argon shield in special atmosphere oven heat treated; heat-up rate with 5 ℃/min is heated to 600 ℃ of isothermals maintenance 40min; furnace cooling behind the isothermal, this step form the NiTi SMA thin film layer with equiaxed grain structure structural state on the PZT matrix.Fig. 2 demonstrates the equiax crystal shape microstructure of NiTi SMA film.
Claims (10)
1. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix is characterized in that may further comprise the steps:
(1) PZT thin slice matrix surface clean;
(2) use cover plate closely to coat the PZT matrix, make the through hole expose the PZT matrix with one or more through holes;
(3) adopt magnetron sputtering method at PZT surface deposition NiTi SMA film;
(4) crystallization is handled and is become a useful person.
2. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 1 is characterized in that the single hole largest hole area on the described cover plate is 7mm
2, the minimum aperture back gauge between the Kong Yukong is 1mm.
3. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 1 and 2, it is characterized in that described magnetron sputtering method is to adopt the high vacuum magnetic control sputtering device, in: ar pressure 1.0～1.5Pa, 100～150 ℃ of substrate temperatures, sputtering power 120～160W, argon flow amount 8～12sccm, target-substrate distance 50～80mm and back of the body end vacuum tightness 2.0～7.0 * 10
-5Under the Pa condition, on the PZT matrix, deposit discontinuous NiTi SMA film.
4. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 3, it is characterized in that described high vacuum magnetic control sputtering device working conditions is: ar pressure 1.5Pa, 150 ℃ of substrate temperatures, sputtering power 160W, argon flow amount 12sccm, target-substrate distance 80mm and back of the body end vacuum tightness 7.0 * 10
-5Pa.
5. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 1 and 2; it is characterized in that it is to deposit material heat treated under argon shield of NiTi SMA film that described crystallization processing is become a useful person; heat-up rate with 4～8 ℃/min is heated to 400～600 ℃; isothermal keeps 30～40min, furnace cooling behind the isothermal.
6. the preparation technology of depositing discontinuous NiTi SMA film is characterized in that the heat treated under the described argon shield on the PZT matrix according to claim 5, is heated to 600 ℃ of isothermals with the heat-up rate of 5 ℃/min and keeps 40min.
7. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 1 and 2 is characterized in that described PZT matrix is Zr and the molar fraction ratio of Ti is 55～58: 45～42 ferroelectric ceramic(s) PZT.
8. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 7 is characterized in that described PZT matrix is Zr and the molar fraction ratio of Ti is 58: 42 ferroelectric ceramic(s) PZT.
9. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 1 and 2 is characterized in that the described NiTi SMA film that deposits on the PZT matrix, the target that uses is Ti-50～52at%NiTi SMA.
10. the preparation technology of depositing discontinuous NiTi SMA film on the PZT matrix according to claim 9 is characterized in that the described target that uses is Ti-51at%NiTi SMA.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112492864A (en) * | 2020-11-26 | 2021-03-12 | 华中科技大学 | Controllable electromagnetic shielding component and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112492864A (en) * | 2020-11-26 | 2021-03-12 | 华中科技大学 | Controllable electromagnetic shielding component and preparation method thereof |
| CN112492864B (en) * | 2020-11-26 | 2022-05-17 | 华中科技大学 | Controllable electromagnetic shielding component and preparation method thereof |
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