CN101710597A - High-efficiency three-joint solar cell - Google Patents
High-efficiency three-joint solar cell Download PDFInfo
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- CN101710597A CN101710597A CN200910213345A CN200910213345A CN101710597A CN 101710597 A CN101710597 A CN 101710597A CN 200910213345 A CN200910213345 A CN 200910213345A CN 200910213345 A CN200910213345 A CN 200910213345A CN 101710597 A CN101710597 A CN 101710597A
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Abstract
The invention discloses a high-efficiency three-joint solar cell which comprises a transparent substrate, as well as an amorphous silicon solar cell, a microcrystalline silicon solar cell, and a microcrystalline Ge Si solar cell which are arranged on the substrate according to the forbidden gap of an intrinsic layer in a descending order, wherein a collector electrode is arranged on the microcrystalline Ge Si solar cell. By adding the microcrystalline Ge Si layer as the third cell of the intrinsic layer, the high-efficiency three-joint solar cell can effectively absorb the infrared part of sunlight and improve the conversion efficiency; in addition, since the microcrystalline Ge Si layer can be prepared in large scale by the method of PECVD and the like, a good production condition is created for the large-scaled application of solar cells.
Description
Technical field
The present invention relates to a kind of photovoltaic solar cell field, particularly a kind of high-efficiency three-joint solar cell with high solar conversion ratio.
Background technology
Along with economic development and population growth, the demand of the energy is more and more huger, and all be limited as the resources such as oil, coal and water power of traditional energy, and it is very big to environment damage, increasing of CO2 content threatens human existence, therefore must develop various new forms of energy energetically to substitute traditional energy, and the kind of new forms of energy is a lot, nuclear energy, wind energy, biomass energy, solar energy etc. are arranged, and wherein solar energy is considered to the most rising a kind of new forms of energy.This is that solar energy is omnipresent on the one hand, as long as just there is solar energy in the place that has the sun to shine, and must could use in the stronger place of wind-force unlike wind energy.Next is the inexhaustible of solar energy, and available resource is the abundantest, is unique energy that can satisfy the human development needs, and the resource of other energy all is limited.
The method of solar cell that sunlight is converted into electric energy is very fast in recent years development, has produced various solar cells.What be most widely used is monocrystaline silicon solar cell, and monocrystaline silicon solar cell is a substrate with p type Si normally, diffusion n type impurity.For taking out electric current, the whole lower surface of p type substrate is coated with silver and sintering, to form silver electrode, connects two electrodes and can obtain electric current.The conversion efficiency of monocrystalline silicon battery is higher, but because single crystal silicon material costs an arm and a leg, itself prepares also relatively difficulty, consumes big energy in the preparation process simultaneously, and cost is higher, so more be that the employing polycrystalline silicon material prepares solar cell.The structure of polysilicon solar cell and preparation method and monocrystaline silicon solar cell are similar, and efficient generally can be lower than monocrystaline silicon solar cell.But the energy consumption and the cost of preparation polycrystalline silicon material are still very high, in order to reduce cost fast, reduce material usage, have developed the non-crystal silicon solar cell that adopts amorphous silicon material.Along with technological progress, the conversion efficiency of non-crystal silicon solar cell has also progressively been brought up to degree of being practical, and because the optical absorption coefficient of amorphous silicon material is more much higher than the crystalline silicon, so it is less that thickness can be done, the thickness of general whole amorphous silicon layer is as long as about 300 microns just enough.
For unijunction solar cell, even if with crystalline material preparation, the theoretical limit of its conversion efficiency generally also has only about 25% under the illumination condition of AM1.5.This be because, the Energy distribution broad of solar spectrum, and any semiconductor can only absorb the wherein energy photon higher than own band gap magnitude.Remaining photon is not to pass battery to be changed into heat energy by the back metal absorption, is exactly the atom of energy delivery being given battery material itself, makes the material heating.These energy all can not become electric energy by producing photo-generated carrier.Moreover, the thermal effect of these photons generations also can raise battery operated temperature and battery performance is descended.In order farthest effectively to utilize the solar energy in the broader wave-length coverage.People are divided into several zones to solar spectrum, have best matched materials to make battery with these zones respectively with energy gap, the spectral response that makes entire cell near with sunlight spectrum, the solar cell with this spline structure is called laminated cell.Existing a kind of binode thin film silicon solar cell has adopted microcrystal silicon layer as second PN junction, can effectively absorb the infrared part of sunlight, than unijunction solar cell efficient height, but the energy gap of microcrystal silicon material is 1.12eV, can't absorb if the photon ability is lower than 1.12eV.Another multijunction solar cell, this battery is the Si/GaAs/InGaP three-decker, adopt MBE technology epitaxial growth multijunction cell on silion cell, by MBE the mode accurately growth of control material and the thickness of each layer battery, because three layers of different material have different energy gaps, every kind of material can absorb the sunlight in the different wave spectrum scopes, the absorption spectrum of battery broadens, a large amount of sunlights are absorbed by battery, thereby have further improved the photoelectric conversion efficiency of solar cell.It is said that this battery can obtain 35% conversion efficiency, but because the In material is very valuable, and As has severe toxicity etc., and this battery is more favourable as the battery sheet of concentrating solar battery system, large tracts of land is used and is had a lot of technical difficulties.
Summary of the invention
Goal of the invention: technical problem to be solved by this invention is at the deficiencies in the prior art, and a kind of raising solar conversion efficiency is provided, simultaneously the high-efficiency three-joint solar cell of cheap pollution-free suitable large-area preparation.
Technical scheme: the invention discloses a kind of high-efficiency three-joint solar cell, comprise transparency carrier, and, on the microcrystalline germanium silicon solar cell, be provided with collector electrode according to descending non-crystal silicon solar cell, microcrystalline silicon solar cell, the microcrystalline germanium silicon solar cell that is successively set on the substrate of the energy gap of intrinsic layer.
Among the present invention, preferably, described non-crystal silicon solar cell comprises a P type amorphous silicon layer, i type amorphous silicon layer and a n type amorphous silicon layer that sets gradually.
Among the present invention, preferably, described microcrystalline silicon solar cell comprises the 2nd p type amorphous silicon layer, i type microcrystal silicon layer and the 2nd n type amorphous silicon layer that sets gradually.
Among the present invention, preferably, described microcrystalline germanium silicon solar cell comprises the 3rd p type amorphous silicon layer, i type microcrystalline germanium silicon layer and the 3rd n type amorphous silicon layer that sets gradually.
Among the present invention, preferably, another kind of scheme, described microcrystalline silicon solar cell comprises the 2nd p type amorphous silicon layer, i type microcrystal silicon layer and the n type microcrystal silicon layer that sets gradually.
Among the present invention, preferably, another kind of scheme, described microcrystalline germanium silicon solar cell comprises p type microcrystal silicon layer, i type microcrystalline germanium silicon layer and the 2nd n type amorphous silicon layer that sets gradually.
Among the present invention, preferably, described plastic base is that transparent conducting glass is made.
Beneficial effect: high-efficiency three-joint solar cell of the present invention can effectively absorb the sunlight infrared part by increasing the 3rd the sub-battery of crystallite GeSi as intrinsic layer, improves conversion efficiency.In addition because crystallite GeSi layer can use the preparation of method such as PECVD, can large-area preparation, for the large-scale application solar cell has been created good working condition.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is done further to specify, above-mentioned and/or otherwise advantage of the present invention will become apparent.
Fig. 1 is the structural representation of the embodiment of the invention one.
Fig. 2 is the structural scheme of mechanism of the embodiment of the invention two.
Embodiment:
The invention discloses a kind of high-efficiency three-joint solar cell, comprise transparency carrier 1, and, on the microcrystalline germanium silicon solar cell, be provided with collector electrode 11 according to descending non-crystal silicon solar cell 110, microcrystalline silicon solar cell 120, the microcrystalline germanium silicon solar cell 130 that is successively set on the substrate of the energy gap of intrinsic layer.Described non-crystal silicon solar cell 110 comprises a P type amorphous silicon layer 2, i type amorphous silicon layer 3 and a n type amorphous silicon layer 4 that sets gradually.Described microcrystalline silicon solar cell 120 comprises the 2nd p type amorphous silicon layer 5, i type microcrystal silicon layer 6 and the 2nd n type amorphous silicon layer 7 that sets gradually.Described microcrystalline germanium silicon solar cell 130 comprises the 3rd p type amorphous silicon layer 8, i type microcrystalline germanium silicon layer 9 and the 3rd n type amorphous silicon layer 10 that sets gradually.Described plastic base 1 is made for transparent conducting glass.
In another kind of scheme, described microcrystalline silicon solar cell 120 comprises the 2nd p type amorphous silicon layer 5, i type microcrystal silicon layer 6 and the n type microcrystal silicon layer 71 that sets gradually.Described microcrystalline germanium silicon solar cell 130 comprises p type microcrystal silicon layer 81, i type microcrystalline germanium silicon layer 9 and the 2nd n type amorphous silicon layer 10 that sets gradually.
Embodiment one
As shown in Figure 1, colleges and universities' three-junction thin film solar cell of present embodiment is made up of 3 sub-batteries, is respectively non-crystal silicon solar cell 110, microcrystalline silicon solar cell 120, microcrystalline germanium silicon solar cell 130.According to the descending arrangement of the energy gap of intrinsic layer, wherein arrow points is the sunlight incident direction.
Detailed structure and preparation method are as follows:
Step 3 adopts the method for PECVD to deposit p type amorphous silicon layer 8 on microcrystalline silicon solar cell 120, deposits one deck i type microcrystalline germanium silicon layer 9 then, deposits one deck n type amorphous silicon 10 again.The thickness of P type amorphous silicon layer 8 is between 5nm～30nm, and then between 50nm～2000nm, the thickness of n type amorphous silicon layer 10 is between 5nm～30nm for the thickness of i type microcrystalline germanium silicon 9.Constitute microcrystalline germanium silicon solar cell 130 for 10 3 layers by P type amorphous silicon layer 8, i type microcrystalline germanium silicon 9, n type amorphous silicon layer;
Step 4, regrowth one deck electrode 11 on microcrystalline germanium silicon solar cell 130, as collector electrode, electrode material can be Al, Ag or other alloy material.
Finish solar cell by prepared such as encapsulation, solar cell can be interconnected to form module, connects successively to form array.
Embodiment two
Fig. 2 is the structure chart of embodiments of the invention two, the difference of this embodiment and embodiment 1 is that the amorphous silicon material with the 7th layer of n type amorphous silicon layer and the 8th layer of P type amorphous silicon layer 8 makes to be the microcrystal silicon material into, wherein the 7th layer makes n type microcrystal silicon layer 71 into, thickness can be between 50nm～300nm, and P type amorphous silicon layer 5, i type microcrystal silicon layer constitute microcrystalline silicon solar cell 120 for 6,71 3 layers; The 8th layer of p type amorphous silicon layer makes p type microcrystal silicon layer 81 into, and thickness can constitute microcrystalline germanium silicon solar cell 130 by p type microcrystal silicon layer 81, i type microcrystalline germanium silicon 9, n type amorphous silicon layer 10 between 50nm～300nm.Other encapsulation waits identical with embodiment 1.
Key of the present invention is exactly to adopt the PN junction of three different semi-conducting materials to form three-joint solar cell, and the structural order of three-joint solar cell is that intrinsic layer is that the sub-solar cell of amorphous silicon layer, intrinsic solar cell, the intrinsic layer that intrinsic layer is microcrystal silicon are the solar cell of microcrystalline germanium silicon.Sunlight is from the amorphous silicon to the microcrystal silicon, again to the order incident of microcrystalline germanium silicon.
The invention provides a kind of thinking and method of high-efficiency three-joint solar cell; the method and the approach of this technical scheme of specific implementation are a lot; the above only is a preferred implementation of the present invention; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.The all available prior art of each part not clear and definite in the present embodiment is realized.
Claims (7)
1. high-efficiency three-joint solar cell, it is characterized in that, comprise transparency carrier, and, on the microcrystalline germanium silicon solar cell, be provided with collector electrode according to descending non-crystal silicon solar cell, microcrystalline silicon solar cell, the microcrystalline germanium silicon solar cell that is successively set on the substrate of the energy gap of intrinsic layer.
2. high-efficiency three-joint solar cell according to claim 1 is characterized in that, described non-crystal silicon solar cell comprises a P type amorphous silicon layer, i type amorphous silicon layer and a n type amorphous silicon layer that sets gradually.
3. high-efficiency three-joint solar cell according to claim 2 is characterized in that, described microcrystalline silicon solar cell comprises the 2nd p type amorphous silicon layer, i type microcrystal silicon layer and the 2nd n type amorphous silicon layer that sets gradually.
4. according to claim 2 or 3 described high-efficiency three-joint solar cells, it is characterized in that described microcrystalline germanium silicon solar cell comprises the 3rd p type amorphous silicon layer, i type microcrystalline germanium silicon layer and the 3rd n type amorphous silicon layer that sets gradually.
5. high-efficiency three-joint solar cell according to claim 2 is characterized in that, described microcrystalline silicon solar cell comprises the 2nd p type amorphous silicon layer, i type microcrystal silicon layer and the n type microcrystal silicon layer that sets gradually.
6. according to claim 2 or 5 described high-efficiency three-joint solar cells, it is characterized in that described microcrystalline germanium silicon solar cell comprises p type microcrystal silicon layer, i type microcrystalline germanium silicon layer and the 2nd n type amorphous silicon layer that sets gradually.
7. high-efficiency three-joint solar cell according to claim 1 is characterized in that, described plastic base is that transparent conducting glass is made.
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| CN200910213345A CN101710597A (en) | 2009-11-03 | 2009-11-03 | High-efficiency three-joint solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468350A (en) * | 2010-11-18 | 2012-05-23 | 李映华 | Glass-based stereo-light double-junction broad-spectrum response alloy electronic resonance emissive photocell |
| CN103022060A (en) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Technology for manufacturing triple-base-material type silicon thin film solar battery by combining silane and silicon helide |
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2009
- 2009-11-03 CN CN200910213345A patent/CN101710597A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468350A (en) * | 2010-11-18 | 2012-05-23 | 李映华 | Glass-based stereo-light double-junction broad-spectrum response alloy electronic resonance emissive photocell |
| CN103022060A (en) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Technology for manufacturing triple-base-material type silicon thin film solar battery by combining silane and silicon helide |
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Application publication date: 20100519 |