CN101694561A - Multi-mask photoetching machine silicon wafer stage system - Google Patents
Multi-mask photoetching machine silicon wafer stage system Download PDFInfo
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- CN101694561A CN101694561A CN200910172951A CN200910172951A CN101694561A CN 101694561 A CN101694561 A CN 101694561A CN 200910172951 A CN200910172951 A CN 200910172951A CN 200910172951 A CN200910172951 A CN 200910172951A CN 101694561 A CN101694561 A CN 101694561A
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Abstract
The invention relates to a multi-mask photoetching machine silicon wafer stage system. The system comprises a base stage, at least one silicon wafer stage, a group of optical lens and a mask stage system. The mask stage system comprises a mask stage base, a mask motion stage and a mask bearing stage. The long side of the mask stage base is in a Y direction, and the short side is in an X direction; the mask motion stage moves linearly along the Y direction on the mask stage base; the mask bearing stage moves linearly along the X direction on the mask motion stage; the mask bearing stage is provided with at least two maskplate mounting grooves and two maskplates along the X direction, wherein each maskplate mounting groove is internally provided with a maskplate. The invention reduces the time for alignment for one time after improving the mask stage system of the traditional photoetching machine and replacing the mask, further reduces the time for stepping once during exposure and reduces the cost, thereby improving the exposure efficiency of the photoetching machine.
Description
Technical field
The present invention relates to a kind of photo-etching machine silicon slice bench double-bench switching system, this system applies belongs to the semiconductor manufacturing facility technical field in the semiconductor lithography machine.
Background technology
In the production run of integrated circuit (IC) chip, the exposure transfer printing (photoetching) of the design configuration of chip on the silicon chip surface photoresist is one of most important operation wherein, and the used equipment of this operation is called litho machine (exposure machine).The resolution of litho machine and exposure efficiency affect the characteristic line breadth (resolution) and the throughput rate of integrated circuit (IC) chip greatly.And, determined the resolution and the exposure efficiency of litho machine again to a great extent as the kinematic accuracy and the work efficiency of the silicon chip ultraprecise motion locating system (being designated hereinafter simply as the silicon chip platform) of litho machine critical system.
The advanced scanning projecting photoetching machine ultimate principle as shown in Figure 1.From the deep UV (ultraviolet light) of light source 45 see through mask 47, lens combination 49 with a part of pattern imaging on the mask on certain Chip of silicon chip 50.Mask and silicon chip oppositely are synchronized with the movement by certain speed proportional, whole pattern imagings on the mask are on the certain chip (Chip) of silicon chip the most at last, present litho machine is only to be provided with a mask on mask platform, other masks change the outfit behind the end exposure, adopt a litho machine branch multistep just to finish and to change mask successively, mask of every replacing will be aimed at once again; And adopt two litho machines to work simultaneously, will significantly increase production cost.
Summary of the invention
At the deficiencies in the prior art, the purpose of this invention is to provide a kind of photoetching machine silicon wafer stage system with many masks, save to change the time of aiming at again behind next piece mask and the time of a stepping in exposure process, reduce cost, and then improve the exposure efficiency of litho machine.
Technical scheme of the present invention is as follows:
A kind of photoetching machine silicon wafer stage system with many masks, this system contains base station, at least one silicon chip platform, one group of optical lens and mask platform system, it is characterized in that: described mask platform system comprises mask platform pedestal 5, mask motion platform 6 and mask plummer 7, and the long limit of described mask platform pedestal 5 is the Y direction, and minor face is a directions X, mask motion platform 6 is at mask platform pedestal 5 upper edge Y direction moving linearlies, and mask plummer 7 is at mask motion platform 6 upper edge directions X moving linearlies; Directions X is provided with two mask mounting grooves at least in described mask plummer upper edge, places a mask in each mask mounting groove.
In the described technical scheme, described mask motion platform 6 is done the guiding driving at mask platform pedestal 5 upper edge Y direction moving linearlies employing air-float guide rails and linear electric motors, or adopts line slideway, ball-screw and servomotor to do the guiding driving; Mask plummer 7 is done the guiding driving at mask motion platform 6 upper edge directions X moving linearlies employing air-float guide rails and linear electric motors, or adopts line slideway, ball-screw and servomotor to do the guiding driving.
The present invention compared with prior art has the advantage of following high-lighting: compare with using a litho machine, can save the time of time aiming at of once changing behind the mask, in addition, in exposure process, also save the time of a stepping, reduced cost, and then improved the exposure efficiency of litho machine.
Description of drawings
Fig. 1 is existing litho machine principle of work synoptic diagram.
Fig. 2 adopts the structural principle synoptic diagram of embodiment of the litho machine system of dual masks for the present invention.
Fig. 3 adopts the principle of work synoptic diagram of embodiment of the litho machine system of dual masks for the present invention.
Among the figure: the 1-base station; 2-pre-service silicon chip platform; 3-exposure silicon chip platform; The 4-lens; 5-mask platform pedestal; 6-mask motion platform; 7-mask plummer; 8a-first mask; 8b-second mask;
Embodiment
A kind of photoetching machine silicon wafer stage system provided by the invention with many masks, this system contains base station 1, at least one silicon chip platform, one group of optical lens 4 and mask platform system, described mask platform system comprises mask platform pedestal 5, mask motion platform 6 and mask plummer 7, the long limit of described mask platform pedestal 5 is the Y direction, and minor face is a directions X; Mask motion platform 6 is at mask platform pedestal 5 upper edge Y direction moving linearlies, and mask plummer 7 is at mask motion platform 6 upper edge directions X moving linearlies; Directions X is provided with two mask mounting grooves at least in described mask plummer upper edge, places a mask in each mask mounting groove.
Described mask motion platform 6 is done the guiding driving at mask platform pedestal 5 upper edge Y direction moving linearlies employing air-float guide rails and linear electric motors, or adopts line slideway, ball-screw and servomotor to do the guiding driving; Mask plummer 7 is done the guiding driving at mask motion platform 6 upper edge directions X moving linearlies employing air-float guide rails and linear electric motors, or adopts line slideway, ball-screw and servomotor to do the guiding driving.
Fig. 2 adopts the structural principle synoptic diagram of the photo-etching machine double-platform exchange system of dual masks for the present invention.This system contains base station 1, a pre-service silicon chip platform 2 and an exposure silicon chip platform 3,4 liang of silicon chip platforms of one group of optical lens are done pre-service and exposure motion respectively at base station 1 upper surface, be provided with a mask platform system above base station 1, this mask platform system comprises a mask platform pedestal 5, mask motion platform 6, mask plummer 7, the first mask 8a and second a mask 8b; The motion of this mask platform system is the two-freedom motion, and establishing along mask platform pedestal 5 long limits is the Y direction, and minor face is a directions X; Mask platform pedestal 5 stacks with mask motion platform 6 orthogonal layers and puts, and mask motion platform 6 stacks with mask plummer 7 orthogonal layers and puts; Mask plummer 7 upper edge directions Xs are arranged two mask mounting grooves, and the first mask 8a and the second mask 8b are installed in the mask mounting groove successively.Guiding by air-float guide rail and linear electric motors drives, and makes mask motion platform 6 at mask platform pedestal 5 upper edge Y direction moving linearlies, and mask plummer 7 is at mask motion platform 6 upper edge directions X moving linearlies.
Fig. 3 adopts the principle of work synoptic diagram of embodiment of the litho machine system of dual masks for the present invention.When carrying out the scan exposure operation, according to the size of silicon chip, mark off several regions on the silicon chip waiting to carve in advance, each such zone is called a field.In the process of each of exposing, at first, mask motion platform 6 moves right along the Y direction, the first mask 8a and the second mask 8b arrive projection in zone simultaneously, mask plummer 7 moves along directions X and makes the first mask 8a be positioned at projection in zone, at first the first mask 8a is scanned, the silicon chip platform 3 that exposes is simultaneously done the counter motion with mask motion platform 6, along the Y direction to left movement, at this moment, the pattern of the first mask 8a is engraved in to be waited to carve on the silicon chip, mask plummer 6 slows down oppositely, and simultaneously, cooling device makes the photoresist quench cooled on the silicon chip, afterwards, exposure silicon chip platform 3 slows down oppositely; Then, mask motion platform 6 along the Y direction to left movement, mask plummer 7 moves along directions X and makes the second mask 8b be positioned at projection in zone, this moment, the second mask 8b was scanned, side by side, exposure silicon chip platform 3 is still done the counter motion with mask plummer 6, move right along the Y direction, this moment, the pattern of the second mask 8b was engraved on the silicon chip, so far finished the scan exposure of field one layer pattern, mask motion platform 6 slows down oppositely, after two masks all scan and finish, exposure silicon chip platform 3 steps to next continuation exposure, circulation successively.
Claims (2)
1. photoetching machine silicon wafer stage system with many masks, this system contains base station (1), at least one silicon chip platform, one group of optical lens (4) and mask platform system, it is characterized in that: described mask platform system comprises mask platform pedestal (5), mask motion platform (6) and mask plummer (7), the long limit of described mask platform pedestal (5) is the Y direction, minor face is a directions X, mask motion platform (6) is at mask platform pedestal (5) upper edge Y direction moving linearly, and mask plummer (7) is at mask motion platform (6) upper edge directions X moving linearly; Directions X is provided with two mask mounting grooves at least in described mask plummer upper edge, places a mask in each mask mounting groove.
2. according to the described a kind of photoetching machine silicon wafer stage system of claim 1 with many masks, it is characterized in that: described mask motion platform (6) is done the guiding driving at mask platform pedestal (5) upper edge Y direction moving linearly employing air-float guide rail and linear electric motors, or adopts line slideway, ball-screw and servomotor to do the guiding driving; Mask plummer (7) is done the guiding driving at mask motion platform (6) upper edge directions X moving linearly employing air-float guide rail and linear electric motors, or adopts line slideway, ball-screw and servomotor to do the guiding driving.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101729516A CN101694561B (en) | 2009-06-30 | 2009-09-11 | Multi-mask photoetching machine silicon wafer stage system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910087965 | 2009-06-30 | ||
| CN200910087965.8 | 2009-06-30 | ||
| CN2009101729516A CN101694561B (en) | 2009-06-30 | 2009-09-11 | Multi-mask photoetching machine silicon wafer stage system |
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| Publication Number | Publication Date |
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| CN101694561A true CN101694561A (en) | 2010-04-14 |
| CN101694561B CN101694561B (en) | 2011-07-20 |
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| CN2009101729516A Active CN101694561B (en) | 2009-06-30 | 2009-09-11 | Multi-mask photoetching machine silicon wafer stage system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113835302A (en) * | 2020-06-24 | 2021-12-24 | 中国科学院微电子研究所 | Double patterning exposure method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113835302A (en) * | 2020-06-24 | 2021-12-24 | 中国科学院微电子研究所 | Double patterning exposure method |
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| CN101694561B (en) | 2011-07-20 |
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Effective date of registration: 20151112 Address after: 100084 Beijing box office,,, Tsinghua University Patentee after: Tsinghua University Patentee after: U-PRECISION TECH CO., LTD. Address before: 100084 Beijing box office,,, Tsinghua University Patentee before: Tsinghua University |