CN101694542B - Thin film transistor for electrowetting display device and manufacturing method thereof - Google Patents
Thin film transistor for electrowetting display device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a thin film transistor for an electrowetting display device and a manufacturing method thereof. The thin film transistor comprises a basal plate, a bottom conducting film layer, a first insulating film layer, a semiconductor amorphous silicon film layer, a second conducting film layer, a second insulating layer, a fourth conducting film layer and an organic leveling film layer; the bottom conducting film layer is arranged on the basal plate; the first insulating film layer is covered above the bottom conducting film layer; the semiconductor amorphous silicon film layer is covered on the first insulating film layer; the second conducting film layer is partially covered on the semiconductor amorphous silicon film layer, and the second layer of the insulating film layer is covered above the first insulating film layer, the semiconductor amorphous silicon film layer and the second conducting film layer; the organic leveling film layer is covered on the second insulating layer; and the fourth conducting film layer is covered on the organic leveling film layer. Compared with the prior art, the invention has the advantages that the reaction speed is improved as the organic leveling film layer is added; a drain electrode and a public electrode are both connected with the same plane by the conducting film layers, therefore, the reaction speed is accelerated; and the opening rate of the product is improved.
Description
Technical field
The present invention relates to the electric moisten display device field, specifically, be meant a kind of thin film transistor (TFT) and manufacture method that is used for electric moisten display device.
Background technology
At present, the flat pannel display industry development is very fast, and the display device of main flow has liquid crystal indicator (LCD) etc., and in recent years, the wetting display device of a kind of electricity is because of its no visual angle problem, and response speed is fast, and is low in energy consumption, and thin grade of product also receives very big concern.
But, no matter be liquid crystal indicator, or electric moisten display device, it all relates to thin film transistor (TFT).The principle of work of liquid crystal indicator mainly is that the effect of two cube electrodes twists about being subjected to by the liquid crystal in the device, plays the effect that shows different figures by the polaroid on two cube electrodes about being attached on then; And the principle of work of electric moisten display device mainly is: rely on the oily mater in the device, according to its voltage difference that is subjected to, show as flexible difference and play the effect that shows different figures.Because the difference on liquid crystal display and the electric wetting displaying principle is used for electric moisten display device if will be used for the thin film transistor (TFT) of liquid crystal indicator present stage, then can show following defective: one, aperture opening ratio is lower, and whole demonstration is bad; Two, the section difference in each zone is bigger on the structure, and the oily mater flowability in the electric moisten display device is bad, thereby reaction velocity is slow.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of thin film transistor (TFT), and it can overcome defectives such as the thin film transistor (TFT) aperture opening ratio of existing liquid crystal indicator is low, can satisfy the requirement of active electric moisten display device.
Another object of the present invention is to provide a kind of method of manufacturing thin film transistor that can satisfy the active electric moisten display device.
In order to achieve the above object, the technical solution adopted in the present invention is:
A kind of thin film transistor (TFT) that is used for electric moisten display device comprises: substrate, bottom conducting film layer, first insulating film layer, semiconductor amorphous silicon film layer, second conductive film layer, second insulation course and the 4th conductive film layer; Bottom conducting film layer is located on the substrate, and it is as the conductive film layer of grid, grid wiring and public electrode; First insulating film layer, it covers the top of bottom conducting film layer; Above-mentioned semiconductor amorphous silicon film layer covers on first insulating film layer; The second above-mentioned conductive film layer is as the conductive film layer of source electrode and drain electrode, and the second above-mentioned conductive film layer partly covers on the above-mentioned semiconductor amorphous silicon film layer; Above-mentioned second layer insulating film layer covers the top of the first above-mentioned insulating film layer, above-mentioned semiconductor amorphous silicon film layer, above-mentioned second conductive film layer; The 4th above-mentioned conductive film layer is as the conductive film layer of pixel electrode and maintenance electrode; Wherein: also further comprise organic leveling film layer, above-mentioned organic leveling film layer covers on second insulation course.
The above-mentioned thin film transistor (TFT) that is used for electric moisten display device, it also further includes protective film, and above-mentioned protective film covers the pixel electrode in the viewing area, the top that keeps electrode and the 4th conductive film layer comprehensively.
The above-mentioned thin film transistor (TFT) that is used for electric moisten display device, first above-mentioned insulating film layer and the second above-mentioned insulating film layer are provided with first via, and this first via is positioned at the top of above-mentioned grid wiring, above-mentioned public electrode and above-mentioned drain electrode.This first via is to form like this: second insulating film layer of promptly removing above-mentioned first insulating film layer of above-mentioned grid wiring of part and above-mentioned public electrode top and above-mentioned second insulating film layer, above-mentioned drain electrode top.
The above-mentioned thin film transistor (TFT) that is used for electric moisten display device, it also further includes the 3rd conductive film layer, and the 3rd above-mentioned conductive film layer covers the above-mentioned bottom conducting film layer or above-mentioned second conductive film layer top of above-mentioned first via below.
Above-mentioned organic leveling film layer covers above-mentioned second insulating film layer top, makes substrate surface smooth, and this organic leveling film layer is provided with second via, and this second via is positioned at above-mentioned first via top.This second via is to form like this: remove the above-mentioned organic leveling film layer of above-mentioned the 3rd conductive film layer top of above-mentioned first via top, thereby form second via.
Above-mentioned the 4th conductive film layer covers the top of above-mentioned organic leveling film layer and above-mentioned the 3rd conductive film layer, makes above-mentioned the 4th conductive film layer by above-mentioned second via, above-mentioned the 3rd conductive film layer, above-mentioned first via and above-mentioned public electrode and above-mentioned drain electrode conducting.
Preferably, above-mentioned bottom conducting film layer is metallic diaphragm or metal alloy rete.
Preferably, above-mentioned second conductive film layer is metallic diaphragm or metal alloy rete.
Preferably, above-mentioned the 3rd conductive film layer is the transparent indium tin oxide conductive film layer.
Preferably, above-mentioned organic leveling film layer material is transparent organic photoetching material.
Preferably, when above-mentioned the 4th conductive film layer was metallic diaphragm or metal alloy rete, above-mentioned thin film transistor base plate was used to do the reflective electrowetting display device; When above-mentioned the 4th conductive film layer was the transparent indium tin oxide conductive film layer, above-mentioned thin film transistor base plate was used for the transmission-type electric moisten display device.
Above-mentioned the 4th conductive film layer forms by above-mentioned second via, above-mentioned the 3rd conductive film layer, above-mentioned first via and above-mentioned public electrode conducting and keeps electrode; Above-mentioned the 4th conductive film layer forms pixel electrode by above-mentioned second via, above-mentioned the 3rd conductive film layer, first via and above-mentioned drain electrode conducting; Be provided with at interval respectively as above-mentioned the 4th conductive film layer that keeps electrode and pixel electrode.
The said protection film layer material is the layer of silicon dioxide material.
A kind of method of manufacturing thin film transistor that is used for electric moisten display device provided by the invention may further comprise the steps:
(1) on substrate, covers one deck bottom metal conductive film layer, preferably, produce gate patterns, grid wiring figure, common pattern of electrodes by the mode of photoetching;
(2) cover first insulating film layer, semiconductor amorphous silicon film layer continuously: produce half electric body amorphous silicon figure, and the first above-mentioned insulating film layer is all covered on the bottom metal conductive film layer in the above-mentioned step (1);
(3) cover second conductive film layer, preferably, produce source electrode, drain electrode by the mode of photoetching;
(4) cover second insulating film layer comprehensively, preferably, produce first via by the mode of photoetching;
(5) cover the 3rd conductive film layer: preferably comprehensively, produce the 3rd conductive film layer by the mode of photoetching, the 3rd conductive film layer is for connecting rete, middle public electrode of above-mentioned steps (1) or the middle drain electrode of above-mentioned steps (3) top that above-mentioned connection rete is incumbent on and states first via below in the step (4);
(6) cover organic leveling film layer comprehensively, make substrate surface smooth, this organic leveling film layer is provided with second via, and this second via is positioned at the top of the first above-mentioned via; Preferably, by the mode of photoetching, the above-mentioned organic leveling film layer of the 3rd conductive film layer top in the above-mentioned steps (5) of first via top forms second via in the removal above-mentioned steps (4);
(7) cover the 4th conductive film layer comprehensively, preferably, produce the pixel electrode figure by the mode of photoetching;
(8) covering protection rete, the said protection film layer covers the top of viewing area.Preferably, by the mode covering protection rete of mask plate with sputter.
Preferably, in step (4), above-mentioned first via is located on above-mentioned first insulation course and second insulation course, and this first via is arranged in the drain electrode top of the common pattern of electrodes and the above-mentioned steps (3) of above-mentioned steps (1).。
Preferably, in step (7), above-mentioned the 4th conductive film layer is arranged on the top of the 3rd conductive film layer in second via in the above-mentioned steps (6), the above-mentioned steps (5), above-mentioned first via of above-mentioned steps (4), and the 4th conductive film layer and above-mentioned steps (1) public electrode conducting forms and keeps electrode; Above-mentioned the 4th conductive film layer is arranged on drain electrode conducting in the 3rd conductive film layer top, above-mentioned first via and the above-mentioned steps (3) in second via in the above-mentioned steps (6), the above-mentioned steps (5), forms pixel electrode; Be provided with at interval respectively as above-mentioned the 4th conductive film layer that keeps electrode and pixel electrode.
Preferably, bottom conducting film layer is metallic diaphragm or metal alloy rete in the above-mentioned steps (1).
Preferably, second conductive film layer is metallic diaphragm or metal alloy rete in the above-mentioned steps (3).
Preferably, the 3rd conductive film layer is the transparent indium tin oxide conductive film layer in the above-mentioned steps (5).
Preferably, the organic leveling film layer material is transparent organic photoetching material in the above-mentioned steps (6).
Preferably, when the 4th conductive film layer was metallic diaphragm or metal alloy rete in the above-mentioned steps (7), above-mentioned thin film transistor base plate was used to do the reflective electrowetting display device; When above-mentioned the 4th conductive film layer was the transparent indium tin oxide conductive film layer, above-mentioned thin film transistor base plate was used for the transmission-type electric moisten display device.
After adopting technique scheme, during enforcement, compared with the prior art, its beneficial effect is:
1, increases one deck organic leveling film layer, improved the flowability of each regional surface smoothness and oily mater, improved reaction velocity;
2, drain electrode and public electrode all are connected to same plane by one deck conductive film layer, have improved the induction sensitivity of oily mater, and reaction velocity is accelerated;
3, the pixel electrode rete covers on the organic leveling film layer, has shielded the influence to oily mater of source electrode cabling and grid cabling signal, because pixel electrode increases relatively, has improved the product aperture opening ratio simultaneously.
Description of drawings
Fig. 1 is the planar structure synoptic diagram of thin film transistor (TFT) of the present invention;
Fig. 2 revolves the sectional view that turn 90 degrees for the A-A face among Fig. 1;
Fig. 3 is the sectional view of B-B face among Fig. 1;
Fig. 4 is a kind of embodiment process flow diagram of method for fabricating thin film transistor of the present invention.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Be to be understood that, though described the present invention by embodiment, those of ordinary skills know, the present invention has many distortion and variation and do not break away from spirit of the present invention, and specific embodiment described herein is only in order to explaining the present invention, and is not used in the scope of the present invention that limits.
Please refer to shown in Fig. 1,2,3; the invention discloses a kind of thin film transistor (TFT) that is used for electric moisten display device; comprise: substrate 1, bottom conducting film layer 2, first insulating film layer 3, semiconductor amorphous silicon film layer 4, second conductive film layer 5, second insulation course 6, the 3rd conductive film layer 7, organic leveling film layer 8, the 4th conductive film layer 9 and protective film 10, wherein:
Bottom conducting film layer 2 is located on the substrate 1, and it is as the conductive film layer of grid 21, grid wiring 22 and public electrode 23.During enforcement, bottom conducting film layer 2 is metallic diaphragm or metal alloy rete.
First insulating film layer 3, it covers the top of bottom conducting film layer 2, promptly is located at the top of grid 21 and public electrode 23.First insulating film layer 3 and second insulating film layer 6 are provided with first via 31, and this first via 31 is positioned at grid wiring 22, public electrode 23 and 52 the top of draining.First via 31 is to form like this: remove the part of part of grid pole 21 and public electrode 23 tops pairing first insulating film layer 3 parts, pairing second insulating film layer 6 in drain electrode 52 tops, thereby form first via 31.
Semiconductor amorphous silicon film layer 4 cover first insulation course 3 on.
Second conductive film layer 5, as the conductive film layer of source electrode 51, drain electrode 52, source electrode 51 and drain electrode 52 parts cover the top of semiconductor amorphous silicon film layer 4.During enforcement, second conductive film layer 5 is metallic diaphragm or metal alloy rete.
Cooperate shown in Figure 2ly, the 3rd conductive film layer 7 is for connecting rete.The 3rd conductive film layer 7 covers the bottom conducting film layer 2 or second conductive film layer, 5 tops of first via, 31 belows.During enforcement, the 3rd conductive film layer 7 is the transparent indium tin oxide conductive film layer.
Organic leveling film layer 8, the top that it covers second insulating film layer 6 makes substrate 1 surfacing, cooperates shown in Figure 2ly, and this organic leveling film layer 8 is provided with second via 32, and this second via 32 is positioned at above-mentioned first via, 31 tops.It is to form like this: remove the part of the organic leveling film layer 8 of pairing the 3rd conductive film layer 7 tops, first via, 31 tops, form second via 32.
During enforcement, organic leveling film layer 8 is transparent organic photoetching material.
The 4th conductive film layer 9 covers the top of organic leveling film layer 8 and the 3rd conductive film layer 7, the 4th conductive film layer 9 forms with public electrode 23 conductings and keeps electrode 92 by second via 32, the 3rd conductive film layer 7, first via 31, with form pixel electrode 91 by second via 32, the 3rd conductive film layer 7, first via 31 with drain electrode 52 conductings, keep electrode 92 and pixel electrode 91 to be provided with at interval; Pixel electrode 91 covers the top of organic leveling film layer 8 and the 3rd conductive film layer 7, and during enforcement, when the 4th conductive film layer 9 was metallic diaphragm or metal alloy rete, above-mentioned thin film transistor base plate 1 was used to do the reflective electrowetting display device; If when the 4th conductive film layer 9 was the transparent indium tin oxide conductive film layer, above-mentioned thin film transistor base plate 1 was used for the transmission-type electric moisten display device.
Fig. 4 is the process flow diagram of a kind of embodiment of the method for manufacturing thin film transistor (TFT) of the present invention, and it may further comprise the steps:
(1) on substrate 1, covers one deck bottom metal conductive film layer 2, produce gate patterns 21, grid wiring figure 22, common pattern of electrodes 23 by the mode of photoetching; During enforcement, wherein bottom conducting film layer 2 is metallic diaphragm or metal alloy rete;
(2) cover first insulating film layer 3, semiconductor amorphous silicon film layer 4 continuously: preferably, produce half electric body amorphous silicon figure, and the first above-mentioned insulating film layer 3 is all covered on the bottom metal conductive film layer 2 in the above-mentioned step (1) by the mode of photoetching;
(3) cover second conductive film layer 5, produce source electrode 51, drain electrode 52 by the mode of photoetching; During enforcement, second conductive film layer 5 in this step is metallic diaphragm or metal alloy rete;
(4) cover second insulating film layer 6 comprehensively, produce first via 31 by the mode of photoetching;
Preferably, in this step, above-mentioned first via 31 is located on first insulation course 3 and second insulation course 6, and this first via 31 is arranged in drain electrode 52 tops of the common pattern of electrodes 23 and the above-mentioned steps (3) of above-mentioned steps (1);
(5) cover the 3rd conductive film layer 7: produce the 3rd conductive film layer 7 by the mode of photoetching comprehensively, the 3rd conductive film layer 7 is for connecting rete, and above-mentioned connection rete 7 covers the middle public electrode 23 of above-mentioned steps (1) or the middle drain electrode of above-mentioned steps (3) 52 tops of first via, 31 belows in the above-mentioned step (4); During enforcement, the 3rd conductive film layer 7 in this step is the transparent indium tin oxide conductive film layer;
(6) cover organic leveling film layer 8 comprehensively, make substrate 1 surfacing, this organic leveling film layer 8 is provided with second via 32, and this second via is positioned at the top of the first above-mentioned via; During enforcement, by the mode of photoetching, the above-mentioned organic leveling film layer 8 of the 3rd conductive film layer 7 tops in the above-mentioned steps (5) of first via, 31 tops forms second via 32 in the removal above-mentioned steps (4); During enforcement, organic leveling film layer 8 materials in this step are transparent organic photoetching material;
(7) cover the 4th conductive film layer 9 comprehensively, produce pixel electrode 91 figures by the mode of photoetching;
Above-mentioned the 4th conductive film layer 8 is arranged on the top of the 3rd conductive film layer 7 in second via 32 in the above-mentioned steps (6), the above-mentioned steps (5), above-mentioned first via 31 of above-mentioned steps (4), and the 4th conductive film layer 9 forms with 23 conductings of above-mentioned steps (1) public electrode and keeps electrode 92; Above-mentioned the 4th conductive film layer 9 is arranged on the 3rd conductive film layer 7 tops in second via 32 in the above-mentioned steps (6), the above-mentioned steps (5), and drain electrode 52 conductings form pixel electrode 91 in described first via and the above-mentioned steps (3); Be provided with at interval respectively as above-mentioned the 4th conductive film layer 9 that keeps electrode 92 and pixel electrode 91.
In addition, when implementing, when the 4th conductive film layer 9 in this step was metallic diaphragm or metal alloy rete, above-mentioned thin film transistor base plate 1 was used to do the reflective electrowetting display device; When above-mentioned the 4th conductive film layer 9 was the transparent indium tin oxide conductive film layer, above-mentioned thin film transistor base plate 1 was used for the transmission-type electric moisten display device.
(8) by the mode covering protection rete 10 of mask plate with sputter, said protection film layer 10 covers the top of viewing area.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (23)
1. a thin film transistor (TFT) that is used for electric moisten display device comprises: substrate, bottom conducting film layer, first insulating film layer, semiconductor amorphous silicon film layer, second conductive film layer, second insulation course and the 4th conductive film layer; Bottom conducting film layer is located on the substrate, and it is as the conductive film layer of grid, grid wiring and public electrode; First insulating film layer, it covers the top of bottom conducting film layer; Described semiconductor amorphous silicon film layer covers on first insulating film layer; Described second conductive film layer is as the conductive film layer of source electrode and drain electrode, and described second conductive film layer partly covers on the described semiconductor amorphous silicon film layer; Described second layer insulating film layer covers the top of described first insulating film layer, described semiconductor amorphous silicon film layer, described second conductive film layer; Described the 4th conductive film layer is as the conductive film layer of pixel electrode and maintenance electrode; It is characterized in that: also further comprise organic leveling film layer, described organic leveling film layer covers on second insulation course.
2. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 1; it is characterized in that: it also further includes protective film, and described protective film covers the pixel electrode in the viewing area, the top that keeps electrode and the 4th conductive film layer comprehensively.
3. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 1 or 2, it is characterized in that: described first insulating film layer and described second insulating film layer are provided with first via, and described first via is positioned at the top of described grid wiring, described public electrode and described drain electrode.
4. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 3, it is characterized in that: it also further includes the 3rd conductive film layer, and described the 3rd conductive film layer covers the described bottom conducting film layer or described second conductive film layer top of described first via below.
5. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 3, it is characterized in that: described organic leveling film layer covers described second insulating film layer top, make substrate surface smooth, described organic leveling film layer is provided with second via, and described second via is positioned at described first via top.
6. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 5, it is characterized in that: described the 4th conductive film layer covers the top of described organic leveling film layer and described the 3rd conductive film layer, makes described the 4th conductive film layer by described second via, described the 3rd conductive film layer, described first via and described public electrode and described drain electrode conducting.
7. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 1 or 2 is characterized in that: described bottom conducting film layer is metallic diaphragm or metal alloy rete.
8. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 3 is characterized in that: described second conductive film layer is metallic diaphragm or metal alloy rete.
9. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 4 is characterized in that: described the 3rd conductive film layer is the transparent indium tin oxide conductive film layer.
10. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 1 or 2 is characterized in that: described organic leveling film layer material is transparent organic photoetching material.
11. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 1 or 2 is characterized in that: when described the 4th conductive film layer was metallic diaphragm or metal alloy rete, described thin film transistor base plate was used to do the reflective electrowetting display device; When described the 4th conductive film layer was the transparent indium tin oxide conductive film layer, described thin film transistor base plate was used for the transmission-type electric moisten display device.
12. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 5 is characterized in that: described the 4th conductive film layer forms by described second via, described the 3rd conductive film layer, described first via and described public electrode conducting and keeps electrode; Described the 4th conductive film layer forms pixel electrode by described second via, described the 3rd conductive film layer, described first via and described drain electrode conducting; Be provided with at interval respectively as described the 4th conductive film layer that keeps electrode and pixel electrode.
13. the thin film transistor (TFT) that is used for electric moisten display device as claimed in claim 2 is characterized in that: described protective film material is the layer of silicon dioxide material.
14. make the arbitrary described method that is used for the thin film transistor (TFT) of electric moisten display device of claim 1～13 for one kind, it may further comprise the steps:
(1) on substrate, covers one deck bottom metal conductive film layer, produce gate patterns, grid wiring figure, common pattern of electrodes;
(2) cover first insulating film layer, semiconductor amorphous silicon film layer continuously: produce half electric body amorphous silicon figure, and described first insulating film layer is all covered on the bottom metal conductive film layer in the described step (1);
(3) cover second conductive film layer, and produce source electrode, drain electrode;
(4) cover second insulating film layer comprehensively, and produce first via;
(5) cover the 3rd conductive film layer: described the 3rd conductive film layer is for connecting rete, and described connection rete covers the middle public electrode of described step (1) or the middle drain electrode of described step (3) top of first via below in the described step (4) comprehensively;
(6) cover organic leveling film layer comprehensively, make substrate surface smooth, and produce second via;
(7) cover the 4th conductive film layer comprehensively, and produce the pixel electrode figure;
(8) covering protection rete, described protective film covers the top of viewing area.
15. manufacturing as claimed in claim 14 is used for the method for the thin film transistor (TFT) of electric moisten display device, it is characterized in that: in step (4), described first via is located on described first insulation course and second insulation course, and described first via is arranged in the drain electrode top of the common pattern of electrodes and the described step (3) of described step (1).
16. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14, it is characterized in that: in step (7), described the 4th conductive film layer is arranged on the top of described first via of the 3rd conductive film layer, described step (4) in second via in the described step (6), the described step (5), and described the 4th conductive film layer and described step (1) public electrode conducting form and keep electrode; Described the 4th conductive film layer is arranged on the 3rd conductive film layer top in second via in the described step (6), the described step (5), and the drain electrode conducting forms pixel electrode in described first via and the described step (3); Be provided with at interval respectively as described the 4th conductive film layer that keeps electrode and pixel electrode.
17. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14 is characterized in that: bottom conducting film layer is metallic diaphragm or metal alloy rete in the described step (1).
18. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14 is characterized in that: second conductive film layer is metallic diaphragm or metal alloy rete in the described step (3).
19. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14 is characterized in that: the 3rd conductive film layer is the transparent indium tin oxide conductive film layer in the described step (5).
20. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14 is characterized in that: the organic leveling film layer material is transparent organic photoetching material in the described step (6).
21. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14, it is characterized in that: when the 4th conductive film layer was metallic diaphragm or metal alloy rete in the described step (7), described thin film transistor base plate was used to do the reflective electrowetting display device; When described the 4th conductive film layer was the transparent indium tin oxide conductive film layer, described thin film transistor base plate was used for the transmission-type electric moisten display device.
22. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14, it is characterized in that: in step (6), described second via is located on the described organic leveling film layer, and described second via is positioned at the top of described first via.
23. the method for manufacturing thin film transistor that is used for electric moisten display device as claimed in claim 14 is characterized in that: in step (8), described protective film is that the mode by sputter covers.
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| CN2009101107467A CN101694542B (en) | 2009-09-30 | 2009-09-30 | Thin film transistor for electrowetting display device and manufacturing method thereof |
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| CN2009101107467A CN101694542B (en) | 2009-09-30 | 2009-09-30 | Thin film transistor for electrowetting display device and manufacturing method thereof |
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| JP5762842B2 (en) | 2011-06-21 | 2015-08-12 | ピクストロニクス，インコーポレイテッド | Display device and manufacturing method of display device |
| CN102522411B (en) * | 2011-12-22 | 2016-02-10 | 深圳莱宝高科技股份有限公司 | Thin film transistor (TFT), the array base palte using this thin film transistor (TFT) and preparation method thereof |
| CN104330889B (en) * | 2014-09-03 | 2017-02-08 | 京东方科技集团股份有限公司 | Electrowetting display panel and manufacturing method thereof, and display device |
| CN106154539B (en) * | 2016-08-26 | 2019-01-01 | 华南师范大学 | A kind of electrowetting device |
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