CN101692484A - Reverse-structured organic light-emitting device and manufacturing method thereof - Google Patents
Reverse-structured organic light-emitting device and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000005540 biological transmission Effects 0.000 claims abstract description 25
- 238000002347 injection Methods 0.000 claims abstract description 16
- 239000007924 injection Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000004381 surface treatment Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 43
- 229910052746 lanthanum Inorganic materials 0.000 claims description 25
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 3
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical group O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 52
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000011368 organic material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 229920001621 AMOLED Polymers 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000006056 electrooxidation reaction Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002603 lanthanum Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention provides a reverse-structured organic light-emitting device and a manufacturing method thereof, wherein the reverse-structured organic light-emitting device adopts a boride thin film with low work function and high stability as a cathode. A manufacturing method of the reverse-structured organic light-emitting device comprises as follows: a depositing step of placing and heating borides in a specific vessel so that the borides are vapor-deposited onto a substrate so as to form a boride thin film thereon; a processing step of subjecting the boride thin film to surface treatment; and a forming step of forming an electronic transmission and light-emitting layer, a hole transmission layer, a hole injection layer and an anode layer sequentially on the boride thin film.
Description
Technical field
The present invention relates to a kind of organic light emitting apparatus and preparation method thereof, relate in particular to a kind of reverse-structured organic light-emitting device and preparation method thereof.
Background technology
Organic luminescent device (OLED) because have the luminosity height, advantage such as driving voltage is low, response speed is fast, the restriction of no visual angle, efficiency height, ultralight are ultra-thin, have great application prospect in fields such as flat-panel monitor, planar light sources.
Present OLED device is made of folder single or multiple lift organic film between two electrodes, and typical operating voltage is 2-10V.Electronics is injected into the conduction band of organic layer from negative electrode, and negative electrode generally uses opaque low workfunction metal, as Mg, Ca, Li etc.Because these metals are very active, thereby alloy commonly used replaces, and as Mg-Ag alloy or Al-Li alloy etc., also can adopt stable metal such as Al to add that resilient coating such as LiF finish electronics and inject.The hole is injected into the valence band of organic layer from anode, and anode is normally transparent, adopts the Au or the ITO of high work function, and light is from the anode-side outgoing.
As shown in Figure 1, organic light emitting apparatus comprises and being arranged in order: substrate 1, anode 2, and organic cavity transmission layer 3, electric transmission and luminescent layer 4, and, cathode layer 5.
The active Driving technique of present OLED mainly is amorphous silicon membrane transistor (a-Si TFT) technology and low temperature polycrystalline silicon (LTPS TFT) technology.Compare with a-Si TFT technology, a series of advantages such as LTPS TFT technology has that speed is fast, product is frivolous, cost is low, resolution is high, power saving and reliability height, and can overcome a-Si TFT technology unvanquishable shortcoming of institute and restriction.Although the LTPSTFT technology has many superiority, because the starting of a-Si TFT technology is early, and has been widely used on the liquid crystal display, therefore to compare with LTPS TFT, it has comparatively mature technique.
In active-matrix organic light emitting diode (AMOLED) panel (AMOLED), generally adopt the p channel transistor to form constant-current source and drive organic luminescent device.And the general transistor that uses, the characteristic of n raceway groove (as carrier mobility) obviously is better than the p channel transistor; Because carrier mobility is very low among the a-Si, and its hole mobility is more much lower than electron mobility, so a-Si TFT can only use the n slot field-effect transistor to make drive circuit.Therefore adopt n channel transistor driving OLED can improve the AMOLED performance.
When making drive circuit with the n slot field-effect transistor, in order to guarantee that it is operated in the saturation region, organic luminescent device must be received the drain electrode of n slot field-effect transistor, the drain electrode that is about to organic light-emitting device negative electrode and n slot field-effect transistor is joined, and this just requires organic luminescent device to have the inverted structure that hearth electrode is a negative electrode.
When making employing inverted structure AMOLED, at first on substrate, make pixel-driving circuit, make organic luminescent device then, at this moment, organic luminescent device can be made into the top ballistic device (transparent anode) of top bright dipping and the end ballistic device (transparent cathode) of bottom bright dipping.
The core of its manufacture craft is that the electric charge at electrode and organic material interface and organic material/organic material interface injects and transport properties.Because the electron affinity of most of commonly used organic photoelectrical material less (approximate or less than 3eV) is so the organic light-emitting device negative electrode usually uses the metal of low work function.
Utilize the magnesium alloy silver electrode as the organic light-emitting device negative electrode as people such as V.Bulovi in 1997, produce the organic luminescent assembly of inversion type structure, but the Electron Injection Characteristics of its negative electrode is not good enough; And for example 2002, people such as people such as X.Zhou and S.R.Forrest utilize doping low work function active metal such as lithium (Li) between organic material, caesium (Cs) is as n type conductiving doping, promote electronics from the negative electrode injection organic material, thereby realize adopting the inversion type structure organic luminescent device of active metal.But these low workfunction metal have high activity, PROCESS FOR TREATMENT difficulty in a large amount of manufacture processes of organic light emitting display, and also the sequencing of metal and organic deposit is different, also can influence the electronics injectability of metal/organic interface.And according to report lithium (Li), caesium metallic atoms such as (Cs) is easy to diffusion in organic material, can influence device stability.
In a word, up to the present, all contain the active metal of low work function in inverted structure organic light-emitting device cathode construction and the manufacture craft, react easily and influence device property; PROCESS FOR TREATMENT for active metal and ultrathin membrane is still quite difficult in organic light emitting display is made at present on the other hand.
Summary of the invention
In view of this, technical problem to be solved by this invention provides organic light emitting apparatus of a kind of inverted structure and preparation method thereof, improves inversion type organic light-emitting device electronics injectability; Improve the ability that device bears water in air steam and the effect of oxygen deterioration; Improve useful life and the luminosity and the luminous efficiency of device; Make that the stable negative electrode of low work function is compatible mutually with semiconducter process; Under prerequisite with good performance, to process easyly, cost is comparatively cheap.
The objective of the invention is to be achieved through the following technical solutions:
A kind of manufacture method of reverse-structured organic light-emitting device is characterized in that, comprises the steps:
Deposition step: boride is placed in the specific container, and the heating boride makes its hydatogenesis to substrate, more than forms a boride film;
Treatment step: described boride film is carried out surface treatment;
Forming step: on described boride film, form electric transmission and luminescent layer, hole transmission layer, hole injection layer and anode layer successively.
Wherein, boride film is as the boride cathode layer.The conductivity height of boride material, normal temperature are down suitable with the conductivity of metallic lead (Pb), only a little less than the conductivity of metallic aluminium (Al).Therefore, this negative electrode has good electrical conductivity, can directly inject the data electrode of negative electrode and AMOLED as the reflection type electronic of OLED, has simplified the manufacture craft of AMOLED, and the collocation transparent anode can be realized top-illuminating OLED.
Wherein, the method for heating boride can select to adopt electron beam evaporation, radio frequency sputtering or laser evaporation etc. in the deposition step.Can select to adopt modes such as beam bombardment or plasma treatment in the treatment step.
Simultaneously, the excellent optical performance of boride film, when film thickness during less than 200nm, its light transmittance is higher than 60%.
With respect to cathode material commonly used, the good conductivity of boride material, chemical stability height, work function are low, are fabulous cathode materials.The electron work functon of cathode material commonly used is as shown in the table:
| Metal material | ??Au | ??Al | ??Mg | ??In | ??Ag | ??Ca | ??Nd | ??Cr | ??Cu |
| Electron work functon (eV) | ??5.1 | ??4.28 | ??3.66 | ??4.1-4.2 | ??4.6 | ??2.9 | ??3.2 | ??4.3-4.5 | ??4.7 |
Adopt technique scheme, can well make it compatible mutually, reduced difficulty of processing and production cost with semiconducter process.Simultaneously, in OLED, electronics is injected into the organic semiconductor from the cathode layer that boride film forms under electric field action, this and boride material are widely used as electronic emission material in other electronic device, by the mode that heats (hot cathode) or high electric field (cold cathode) electronics is transmitted into the vacuum from boride cathode and compares, its structure and injection mechanism are different fully.
Be produced on above the organic material with the cathode layer of traditional OLED and compare, technique scheme also has the advantage of following uniqueness:
1) can avoid the influence of high temperature in the boride film manufacturing process or plasma to organic layer
2) after boride film completes, be convenient to this film is handled,, can optimize film, obtain low work function to be more convenient for as annealing in process etc.
3) after boride film completes, can adopt the method for dry method or wet method to carry out the etching moulding.
4) be convenient to easily regulate the thickness of boride film, and adopt reflection or transparent cathode/anode conductive layer, realize multiple OLED structures such as transparent, that the top is luminous, the end is luminous easily.
Wherein, described boride adopts and selects to adopt lanthanum hexaboride (LaB6), cerium boride borides such as (CeB6).
Preferably, described boride adopts lanthanum hexaboride.
Certainly, described boride can also be selected to adopt as cerium boride (CeB6) etc.But, find that through applicant's years of researches and production practices it is 2.6eV that the lanthanum hexaboride film cathode is convenient to optimize its work function, mates very much with organic material, helps the injection of electronics on energy level.
Preferably, in the described deposition step, adopt evaporation electron beam heating evaporation boride, the vacuum degree of heating environment is 5 * 10
-5Pa; Described substrate rotates with 10 rev/mins the speed of rotation; The temperature range of described substrate is 150 to 400 degrees centigrade; The deposition rate of described boride film is 1.5 to 10 nm/minute.
The X-ray diffraction spectrum of lanthanum hexaboride (LaB6) film that electron beam evaporation is made as shown in Figure 6.
Certainly, boride film can also adopt as radio frequency sputtering, or method such as laser evaporation deposition forms.Above-mentioned preference of the present invention provides a kind of method of electron beam evaporation of optimization, is convenient to obtain the homogeneous film of 2.6eV work function.
Preferably, described treatment step adopts specific processing electron beam to shine described boride film, continues 5 minutes, and the temperature that heats described boride film is 150 to 400 degrees centigrade; The beam current density of described processing electron beam is 20 milliamperes/square centimeter, and its voltage is 400 volts.
Preferably, described forming step comprises the steps: successively
On described boride film, the Alq3 film of thermal evaporation 60 nanometer thickness forms electric transmission and luminescent layer;
On described electric transmission and luminescent layer, the NPB of thermal evaporation 60 nanometer thickness forms hole transmission layer;
On described hole transmission layer, the thermal evaporation tungstic acid forms hole injection layer;
On described hole injection layer, splash-proofing sputtering metal or ito thin film form anode layer.
Preferably, described substrate is selected to adopt: glass substrate, metal substrate, silicon chip or ceramic substrate etc.
Wherein, glass substrate can be selected adopting quartz glass or alkali-free glass.
Preferably, described substrate also comprises: be attached to insulating barrier or transparency electrode on described glass substrate, metal substrate, silicon chip or the ceramic substrate.
Preferably, described deposition step also comprises:
The etching electrode step: the substrate that will be attached with described boride film is immersed in the crystal vessel that is loaded with electrochemical corrosive liquid, and described crystal vessel connects the negative pole of power supply, and described boride film connects the positive pole of power supply.
Preferably, in described crystal vessel, also be with a cask flask, be used to shield of the interference of the electric field of surrounding environment described etching electrode step.
The reverse-structured organic light-emitting device that the present invention also further provides the manufacture method of described reverse-structured organic light-emitting device to make.
The invention has the advantages that compared with prior art at first, boride material is typical cathode material.Because work function is low, in electronic device, be widely used as electronic emission material, by the mode that heats (hot cathode) or high electric field (cold cathode) electronics is transmitted into the vacuum from boride cathode.And in OLED, electronics is injected into the organic semiconductor from the boride cathode layer under electric field action, and it is different launching with electronics on structure and injection mechanism.Secondly, the inversion type organic luminescent device is at first made the boride cathode layer, and the cathode layer of traditional OLED is produced on above the organic material.The change of this production order has brought the characteristics of cathode layer uniqueness:
1) can avoid the influence of high temperature in the boride film manufacturing process or plasma to organic layer
2) after boride film completes, film is carried out annealing in process, can optimize film, obtain low work function.
3) after boride film completes, can adopt the method for dry method or wet method to carry out the etching moulding.
4) can easily regulate boride film thickness, and adopt reflection or transparent cathode/anode conductive layer, realize multiple OLED structures such as transparent, that the top is luminous, the end is luminous easily.
Description of drawings
Fig. 1 is the structural representation of organic light emitting apparatus in the prior art
Fig. 2 is the structural representation of a kind of embodiment of reverse-structured organic light-emitting device of the present invention;
Fig. 3 is the structural representation of the another kind of embodiment of reverse-structured organic light-emitting device of the present invention;
Fig. 4 is the structural representation of the another kind of embodiment of reverse-structured organic light-emitting device of the present invention;
Fig. 5 is the structural representation of the another kind of embodiment of reverse-structured organic light-emitting device of the present invention;
Fig. 6 is a lanthanum hexaboride film X-ray diffraction spectrum;
Fig. 7 is the environment schematic diagram of etching electrode among a kind of embodiment of the manufacture method of reverse-structured organic light-emitting device of the present invention.
Embodiment
The invention will be further described below in conjunction with accompanying drawing and preferred embodiment.
As shown in Figure 3, a kind of embodiment of reverse-structured organic light-emitting device comprises and being arranged in order: glass substrate 12, boride cathode layer 13, electric transmission and luminescent layer 14, hole transmission layer 15, adopt the hole injection layer 16 of inorganic material layer, and, transparent anode 17.
Wherein, boride adopts lanthanum hexaboride, and the lanthanum hexaboride of monocrystalline or polycrystalline is placed in the graphite crucible, makes the lanthanum hexaboride hydatogenesis to glass substrate with the electron beam heating.Typical manufacturing conditions is:
Vacuum degree 5 * 10
-5Pa;
10 rev/mins of the rotary speeies of glass substrate 18;
150 to 400 ℃ of the temperature of glass substrate 18;
Deposition rate 1.5 to 10 (nm/min).
The lanthanum hexaboride film has than higher optical transmittance, and magnesium silver alloy cathode thin film visible light under this thickness of same thickness almost can not see through.Wavelength be the visible light of 400nm to 750nm to the transmitance of 180nm lanthanum hexaboride film greater than 65%, be 70% 5%, peak transmission 74% is positioned at the 496nm place.
As shown in Figure 6, crystal face 100 diffraction maximums are very strong in the X-ray diffraction spectrum of lanthanum hexaboride film, and are more much higher than the diffraction maximum of other crystal face, illustrate that prepared lanthanum hexaboride film is a preferred orientation.The work function of this orientation lanthanum hexaboride film is minimum, and the effusion function of this lanthanum hexaboride film reaches 2.6eV after tested.
Then, before further depositing organic material is made electric transmission and luminescent layer, hole transmission layer, hole injection layer and anode layer, with specific processing electron beam treatment lanthanum hexaboride film surface, typical processing parameter is: beam current density is that 20 milliamperes/square centimeter, high pressure are that 400V, lanthanum hexaboride film temperature are that 150-400 ℃, time are 5 minutes.
Then successively the Alq3 film of thermal evaporation 60 nanometer thickness as electron transfer layer and luminescent layer; The NPB of 60 nanometer thickness is as hole transmission layer, and to the damage of organic layer, the thermal evaporation tungstic acid is as hole injection layer when preventing sputter, and last splash-proofing sputtering metal or ito thin film are as anode.
As shown in Figure 2, reverse-structured organic light-emitting device another kind of embodiment comprises and being arranged in order: glass substrate 6, transparency electrode 7, boride cathode layer 8, electric transmission and luminescent layer 9, and hole transmission layer 10, and, as the reflection anode 11 of anode layer.
As shown in Figure 4, reverse-structured organic light-emitting device another kind of embodiment comprises and being arranged in order: glass substrate 18, transparency electrode 19, boride cathode layer 20, electron transfer layer and luminescent layer 21, hole transmission layer 22, hole injection layer 23, and, as the transparent anode 24 of anode layer.
The difference of Fig. 2, Fig. 4 and embodiment maximum shown in Figure 3 is, has adhered to transparency electrode on glass substrate earlier, and then adopts said method paying the boride cathode layer on transparency electrode.Like this, be attached with the glass substrate integral body of transparency electrode as substrate.
As shown in Figure 5, the another kind of embodiment of reverse-structured organic light-emitting device, the top illuminating device structure chart that N type thin-film transistor drives.
Comprising: glass substrate 25, insulating barrier 26, gate insulator 27, interlayer insulating film 28, source electrode 29, OLED assembly 30, N+ doped region 31, polysilicon raceway groove 32, grid 33, and, drain electrode 34.
Wherein, source electrode 29 also is the negative electrode of OLED.
The manufacture method of the foregoing description is as follows:
(1) on the glass substrate that quartz glass or alkali-free glass etc. is constituted, the using plasma chemical vapour deposition technique forms insulating barrier 26 and a-Si film successively.
(2) a-Si film dehydrogenation
(3) the surface irradiation laser beam to the a-Si film carries out annealing in process, and a-Si dissolved recrystallizes and form the semiconductor film 32 that is made of poly-Si.
(4) Poly-Si island definition: on semiconductor film, form the island polysilicon, and form N type impurity range 31 by photoetching once more by photoetching process.After impurity injects, utilize RTA (rapid thermal annealing) method to anneal.Form source region 31a and drain region 31b.
(5) deposition of gate insulation layer: adopt the PECVD method at semiconductor film, form dielectric film 27.
(6) on gate insulating film 27, form the aluminum metal film by sputtering method, with as grid electric conductor film 33.
(7) adopt self-registered technology to form N+ doped region 31.
(8) deposition interlayer insulating film 28 and adopt photoetching process forms contact hole.
(9) on the substrate that above-mentioned steps forms, adopt lanthanum hexaboride to be placed in the graphite crucible, make the lanthanum hexaboride hydatogenesis to this substrate, to form the lanthanum hexaboride film as lanthanum hexaboride source-drain electrode layer with the electron beam heating with monocrystalline or polycrystalline.
(10) as shown in Figure 5, adopt the method for electrochemical corrosion on lanthanum hexaboride source-drain electrode layer, to etch source-drain electrode 34 and 29.Electrochemical corrosive liquid is selected for use:
Phosphoric acid (H
3PO
4): absolute ethyl alcohol (C
2H
5OH): water (H
2O)=5: 20: 20 solution.
Electrochemical corrosive liquid is placed in the graphite tube 400.Have a metallic conductor 600 well to contact with graphite tube 400 in graphite tube 400 bottoms, it is as the negative electrode in the electrochemical corrosion course.In addition, be mounted with polyvinyl fluoride shielding cylinder 200 in graphite tube 400, be used for shielding graphite tube 400 peripheral electric fields, graphite tube 400 connects the negative electrode of external power 500.Adjust substrate 300 with lanthanum hexaboride source-drain electrode layer and the distance between the metallic conductor 600 at last, energized 500 is carried out electrochemical corrosion then.
(10) with specific processing electron beam treatment lanthanum hexaboride film surface, typical processing parameter is: beam current density is that 20mA/ square centimeter, high pressure are that 400V, lanthanum hexaboride film temperature are that 150-400 ℃, time are 5 minutes.
(11) organic illuminating element 30 is formed on the conductive layer 29.Luminous on the direction relative with substrate.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (10)
1. the manufacture method of a reverse-structured organic light-emitting device is characterized in that, comprises the steps:
Deposition step: boride is placed in the specific container, and the heating boride makes its hydatogenesis to substrate, more than forms a boride film;
Treatment step: described boride film is carried out surface treatment;
Forming step: on described boride film, form electric transmission and luminescent layer, hole transmission layer, hole injection layer and anode layer successively.
2. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 1 is characterized in that, described boride selects to adopt lanthanum hexaboride or cerium boride.
3. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 2 is characterized in that, in the described deposition step, adopts evaporation beam bombardment heating evaporation boride, and the vacuum degree of heating environment is 5 * 10
-5Pa; Described substrate rotates with 10 rev/mins the speed of rotation; The temperature range of described substrate is 150 to 400 degrees centigrade; The deposition rate of described boride film is 1.5 to 10 nm/minute.
4. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 2, it is characterized in that, described treatment step adopts specific processing electron beam to shine described boride film, continues 5 minutes, and the temperature that heats described boride film is 150 to 400 degrees centigrade; The beam current density of described processing electron beam is 20 milliamperes/square centimeter, and its voltage is 400 volts.
5. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 2 is characterized in that, described forming step comprises the steps: successively
On described boride film, the Alq3 film of thermal evaporation 60 nanometer thickness forms electric transmission and luminescent layer;
On described electric transmission and luminescent layer, the NPB of thermal evaporation 60 nanometer thickness forms hole transmission layer;
On described hole transmission layer, the thermal evaporation tungstic acid forms hole injection layer;
On described hole injection layer, splash-proofing sputtering metal or ito thin film form anode layer.
6. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 1 is characterized in that, described substrate is selected to adopt: glass substrate, metal substrate, silicon chip or ceramic substrate.
7. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 6 is characterized in that, described substrate also comprises: be attached to insulating barrier or transparency electrode on the described glass substrate.
8. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 7 is characterized in that, described deposition step also comprises:
The etching electrode step: the substrate that will be attached with described boride film is immersed in the crystal vessel that is loaded with electrochemical corrosive liquid, and described crystal vessel connects the negative pole of power supply, and described boride film connects the positive pole of power supply.
9. the manufacture method of reverse-structured organic light-emitting device as claimed in claim 8 is characterized in that, also is with a cask flask in described crystal vessel, is used to shield the interference of the electric field of surrounding environment to described etching electrode step.
10. adopt the reverse-structured organic light-emitting device of making as the manufacture method of the described reverse-structured organic light-emitting device of arbitrary claim in the claim 1 to 9.
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| CN 201110115401 Division CN102185121B (en) | 2009-08-17 | 2009-08-17 | Manufacturing method of organic light-emitting device with inverted structure |
| CN 201110115403 Division CN102201551B (en) | 2009-08-17 | 2009-08-17 | Fabrication method of organic light emitting device with inverted structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296059A (en) * | 2013-06-24 | 2013-09-11 | 中国科学院长春光学精密机械与物理研究所 | Active matrix organic light emitting display device and manufacturing method thereof |
| CN104183771A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emission diode and preparation method thereof |
| CN106549113A (en) * | 2017-01-16 | 2017-03-29 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and device |
| CN106654050A (en) * | 2017-01-16 | 2017-05-10 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel and device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7701130B2 (en) * | 2001-08-24 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Luminous device with conductive film |
| CN1620214A (en) * | 2003-11-18 | 2005-05-25 | 电子科技大学 | New type organic electroluminous appliance |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104183771A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emission diode and preparation method thereof |
| CN103296059A (en) * | 2013-06-24 | 2013-09-11 | 中国科学院长春光学精密机械与物理研究所 | Active matrix organic light emitting display device and manufacturing method thereof |
| CN106549113A (en) * | 2017-01-16 | 2017-03-29 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and device |
| CN106654050A (en) * | 2017-01-16 | 2017-05-10 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel and device |
| US10177332B2 (en) | 2017-01-16 | 2019-01-08 | Shanghai Tianma AM-OLED Co., Ltd. | Organic light-emitting display panel and device |
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