CN101692461A - Nanometer electronic device based on semiconductor nano materials and preparation method thereof - Google Patents
Nanometer electronic device based on semiconductor nano materials and preparation method thereof Download PDFInfo
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- CN101692461A CN101692461A CN200910093547A CN200910093547A CN101692461A CN 101692461 A CN101692461 A CN 101692461A CN 200910093547 A CN200910093547 A CN 200910093547A CN 200910093547 A CN200910093547 A CN 200910093547A CN 101692461 A CN101692461 A CN 101692461A
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Abstract
The invention discloses a nanometer electronic device based on semiconductor nano materials and a preparation method thereof; yttrium metal with low work function is adopted as a contact electrode material, the yttrium metal forms ohmic contact with a conduction band of one-dimensional semiconductor nanometer material directly, so as to obtain an electronic form field effect transistor with high performance and other nanometer electronic devices including a diode, biological and chemical sensors and the like, which take the semiconductor nanometer material as a base. The invention greatly reduces the processing cost of the nanometer type devices and circuits, improves the performance of the devices, and has very important significance for promoting the practical process of the nanometer electronic devices and has wide application prospect.
Description
Technical field
The present invention relates to the nanometer electronic device field, relate in particular to a kind of with semiconductor nano material particularly carbon nano-tube be the nanometer electronic device of base, and realize the method that high-performance n type contacts between semiconductor nano material and the metal electrode.
Background technology
The research of nanometer electronic device is of paramount importance field in the current nanoscale science and technology.One dimension or accurate one dimension semiconductor nano material have unique electrology characteristic and optical characteristics, especially are that the semiconductor nano material of representative is considered to one of structure material of most promising nanometer electronic device with its unique electric property with the carbon nano-tube.Up to now, with various nanometer electronic devices such as successfully development such as field-effect transistor (FET), diode, logical operation circuit, oscillator, decoder, infrared light-emitting device, photo-detector, biology and chemical sensor that semiconductor nano material such as carbon nano-tube make up, the performance of individual devices has surpassed present silica-based microelectronic component in many aspects.Make that CNT (carbon nano-tube) is that the application prospect of nano electron device of representative is very optimistic.Especially top major company such as the IBM in the world, the increasing research of Intel etc. drops into the practicalization that has more further promoted nanometer electronic device.
Different with silicon-based devices is, comprises that contact the source-drain electrode that is adopted with nano material in the one dimension of carbon nano-tube or the various nanometer electronic devices of quasi-one-dimensional nanometer material for base all is metal electrode, and this is that one dimension characteristic by nano material determines.Therefore all inevitably relate to the connectivity problem between carbon nano-tube and outer electrode and each carbon nano-tube in the carbon nano tube device processing.What extensively adopt at present is to use the metal electrode of different work functions to connect, and promptly adopts various micro-machined methods to select the proper metal material that carbon nano-tube is coupled together and is built into nanometer electronic device.(Palladium Pd) has realized contacting [A.Javey, J.Guo, Q.Wang, M.Lundstrom, H.Dai, Nature, 424,654 (2003)] with the p type high-performance of carbon nano-tube to adopt Metal Palladium at present.The carbon nanotube field-effect transistor that adopts Pd to do contact electrode not only can obtain ohmic contact, and can realize the ballistic transport of charge carrier, and partial properties is considerably beyond present p type metal oxide semiconductor FET based on silicon technology.As everyone knows, the CMOS as the logical circuit elementary cell needs p type and n type FET simultaneously.Although the p-type carbon nano-tube FET of ballistic transport realizes successfully that the research of n type carbon nano-tube FET also lags far behind p type FET.The method that is used for preparing n type carbon nano-tube FET at present mainly contains two kinds, a kind of be the metal that adopts low work function (as Al, Mg, Ca) [Y.Nosho, Y.Ohno, S.Kishimoto, T.Mizutani, Nanotechnology, 17,3412 (2006), Ali Javey, Qian Wang, Woong Kim, and Hongjie Dai, IEEEIEDM2003] realize that as electrode material metal contacts with the n type of carbon nano-tube, thus another is carbon nano-tube itself to be carried out the electron type doping realize n type device [A.Javey, R.Tu, D.B.Farmer, J.Guo, R.G.Gordon, and H.Dai, Nano Lett, 5,345 (2005)].But, the performance of the n type device of first method institute results reported is generally relatively poor, switch current ratio and ON state current value are all smaller, the metal that mainly is used low work function does not form good ohmic contact with carbon nano-tube, the wettability that may be metal and carbon nano-tube on the one hand is bad, the coat of metal can not form good physics with carbon nano-tube and contact, the chemism of most of on the other hand low workfunction metal own is higher, be easy to form oxide skin(coating) (general work function is higher) in the metal surface, these metal targets that have oxide form compound doped Metal Contact easily in coating process, perhaps the not high metallic atom oxidation that brings of vacuum degree also can cause being difficult to form high performance n type contact in coating process.So generally believe and think that the metal that be difficult to adopt low work function realizes the n type device of the ohmic contact of carbon nano-tube as contact electrode.Though second method can obtain the n type device of better performances, because the carbon pipe does not have dangling bonds, and the contour chemically active doping of potassium is also unstable, device must be in certain chemical environment, the performance of device changes thereupon when changing when environment (as temperature, atmosphere), and practicality is relatively poor.Therefore, how to realize that carbon nano-tube contacts the key factor that has become restriction nanometer electronic device practicability with high performance n type between metal electrode.Chinese invention patent ZL 200710090362.4 adopts metal scandium, and (Scandium Sc) has prepared the carbon nano-tube n type field-effect transistor of performance near theoretical limit as electrode material.But because the output of metal scandium is relatively low, cause cost higher, be about about 5 times of golden price, be difficult in the industrial quarters large-scale application.Therefore need seek to form high-performance n type with carbon nano-tube and contact, again at metal material more on the low side in price.
Summary of the invention
The object of the present invention is to provide nanometer electronic device of a kind of based semiconductor nano material and preparation method thereof, want on the one hand to make to form high performance n type between nano material and the metal electrode and contact, make the cost of manufacture reduction of device on the other hand again.
For achieving the above object, the present invention adopts following technical scheme:
A kind of nanometer electronic device of based semiconductor nano material comprises one dimension semiconductor nano material and the metal electrode that directly contacts with it, it is characterized in that, described metal electrode is yttrium (Yttrium, Y) electrode.
Adopt metallic yttrium as contact electrode, can form ohmic contact, make the performance of device reach best with the conduction band of one dimension semiconductor nano material.
In above-mentioned nanometer electronic device, described one dimension semiconductor nano material is preferably carbon nano-tube.
Described nanometer electronic device can be electron type field-effect transistor (a n type FET device), also can be other various high performance nanometer electronic devices, comprises diode, luminescent device, photo-detector, biology and chemical sensitisation device or the like.Wherein, n type FET is a conductive channel with the semiconductor nano material of one dimension, and the yttrium metal that adopts low work function is set up Ohm contact electrode as source-drain electrode material and one dimension semiconductor nano material and got in touch.
The preparation method of nanometer electronic device of the present invention is simple, with metallic yttrium as the contact electrode material, by various micro-processing technologies, between metallic yttrium and one dimension semiconductor nano material, to set up electrode and be connected, the two direct connection can realize high performance n type contact.Micro-processing technology commonly used is for example:
On the one dimension semiconductor nano material, form the pattern form of required electrode by photoetching (electron beam or optical lithography), evaporation layer of metal Y again, peel off then and remove unwanted metal level, promptly between metallic yttrium and semiconductor nano material, set up electrode and be connected.
When utilizing above-mentioned evaporation coating method to make the Y electrode, preferably in high vacuum environment, carry out evaporation, for example be evacuated to air pressure≤3 * 10
-8Torr, more preferably air pressure＜1 * 10
-8Torr.
Further, before evaporation the surface of metal Y target is handled with acid, can remove the oxide of metal surface, perhaps first oxide layer with the metal surface evaporates in the evaporation metal process, carry out the evaporation of official sample again, the electrode that can make device is to be made of purer metal Y.
Below, characteristics of the present invention and principle will mainly be set forth by the n type FET device based on carbon nano-tube, but its range of application is not limited to carbon nano-tube, and basic operation principle is suitable equally for other n type devices based on the one dimension semiconductor nano material.
The conductive channel of nanometer electronic device involved in the present invention is carbon nano-tube or other one dimension semiconductor nano material of Intrinsical, and the realization of n type ohmic contact does not need this conductive channel is mixed.In theory, the metal of low work function can form n type device.The mechanism that can realize n type ohmic contact is: because the one dimension characteristic of carbon nano-tube, metal does not have the Fermi surface pinning effect when contacting with semiconductor type carbon nano-tube, thereby the Schottky barrier height that the two contact forms is mainly determined by the work function difference of carbon nano-tube and metal material.The Fermi level of carbon nano-tube is 4.5eV, the about 0.6eV of the energy gap of the Single Walled Carbon Nanotube of diameter 1.5nm, so be about 4.2eV at the bottom of the conduction band of carbon nano-tube.Do electrode for realizing the metal material that the contact of n type must select work function to be lower than 4.5eV.For most of low workfunction metal, though work function is lower, Al (4.3eV) for example, Mg (3.60eV) and Ca (2.87eV), but they are oxidation easily in air, general, the work function of the oxide of low workfunction metal can be apparently higher than metal itself, thereby causes the rising of Schottky potential barrier.In addition, the wettability of many low workfunction metal and carbon nano-tube is also bad, and these all cause them to be difficult to form high performance n type with carbon nano-tube contacting.
For metallic yttrium (Y), its work function be 3.1eV (＜4.2eV), and also more stable in air, the wetting property of Y and carbon nano-tube is also relatively good simultaneously, metal Y can form complete parcel in carbon nano tube surface, has guaranteed that Y and carbon nano-tube can form good physics and contact.Simultaneously, in preparation process, can keep primary characteristic to obtain high performance n type contact, need under the condition of high vacuum, (for example be evacuated to air pressure≤3 * 10 when evaporation coating method prepares the Y electrode in order to ensure the Y electrode
-8Torr) carry out.General, we adopt block metal Y in high vacuum environment (air pressure≤3 * 10
-8Torr) evaporation under reduces the metal Y atom oxidation that vacuum degree may cause inadequately under the hot conditions in evaporate process.Further, before evaporation the surface of metal targets is handled with acid, can remove the oxide of metal surface, perhaps first oxide layer with the metal surface evaporates in the evaporation metal process, carry out the evaporation of official sample again, thereby the electrode that guarantees device is to be made of purer metal Y.
Adopt Y to set up Ohm contact electrode and get in touch, not only can obtain the n type device of stable performance, and in carbon nano-tube, can realize ballistic Transport as metal electrode material and carbon nano-tube.The switch current ratio of making the carbon nanotube field-effect transistor of electrode of Y can surpass 10
6, ON state current can reach more than the 25 μ A, and the mobility of electronics can surpass 5100cm
2/ Vs, the mean free path of electronics can reach 0.7 μ m.From scandium and yttrium on same carbon pipe respectively as the fieldtron of contact electrode to recently, yttrium as the n type device of electrode on some device performance index even surmount scandium.
The present invention proposes and utilize Y to form the thought that high-performance n type contacts as metal electrode material and one dimension semiconductor nano material, not only can be used to prepare high performance n type FET, also can be used to prepare with the semiconductor nano material is other various high performance nanometer electronic devices of base, the diode that comprises carbon nano-tube, and luminescent device, photo-detector, biology and chemical sensitisation device.According to top Analysis on Mechanism, and the data of the appended embodiment of the present invention show, the carbon nano-tube nanometer electronic device (comprising field-effect transistor, diode, biology and chemical sensitisation device etc.) that utilizes Y to do electrode material to prepare is excellent performance, stable not only, and the preparation method is simple.Though the metal scandium electrode also can form the ohmic contact of good n type with CNT (carbon nano-tube) in the previous patent, yttrium itself is more much lower than scandium electrode cost, and the existing market price differs about 1000 times.For large-scale application, yttrium electrode has more advantage.The present invention has very important significance to the practicalization that promotes nanometer electronic device, is with a wide range of applications.
Description of drawings
Fig. 1 is with SiO
2Structural representation for the carbon nanotube field-effect transistor of bottom grating structure.
Fig. 2 is to be the transfer characteristic figure of Single Walled Carbon Nanotube (diameter the is 2nm) field-effect transistor of the bottom grating structure of source-drain electrode with the yttrium.
Fig. 3 is to be the output characteristics figure of Single Walled Carbon Nanotube (diameter the is 2nm) field-effect transistor of the bottom grating structure of source-drain electrode with the yttrium.
Fig. 4 is source (S), leak (D) electrode material is yttrium, and grid (G) electrode material is the structural representation of carbon nanotube field-effect transistor of the top gate structure of Ti.
Fig. 5 is to be the transfer characteristic figure of Single Walled Carbon Nanotube (diameter the is 3nm) field-effect transistor of the top gate structure of source-drain electrode with the yttrium.
Fig. 6 is to be the output characteristics figure of Single Walled Carbon Nanotube (diameter the is 3nm) field-effect transistor of the top gate structure of source-drain electrode with the yttrium.
Embodiment
Below in conjunction with accompanying drawing, further describe the present invention by embodiment, but do not limit the present invention in any way.
Embodiment 1: be the Single Walled Carbon Nanotube field-effect transistor and the preparation thereof of the bottom grating structure of source-drain electrode with yttrium (Y)
As shown in Figure 1 with SiO
2For gate medium 4, with Si is the Single Walled Carbon Nanotube field-effect transistor of back of the body grid 5 structures, and its source (S) 2, leakage (D) 3 electrode materials are yttrium (Y), are positioned at the two ends of Single Walled Carbon Nanotube 1.Concrete preparation process is as follows:
1) by located growth, perhaps scattered carbon pipe solution is dripped on the substrate, thereby obtain to be positioned at Si/SiO
2Carbon nano-tube on the substrate;
2), note the particular location of carbon nano-tube by ESEM or atomic force microscope observation;
3) resist coating also passes through the shape that optical exposure or electron beam lithography form electrode on carbon nano-tube;
4) photoetching is good sample is put in the electron beam evaporation system, is evacuated to 3 * 10
-8About Torr, with the thick metal Y of speed evaporation one deck 50nm of 1A/s;
5) sample is put in the acetone peeled off, remove unwanted metal level and promptly obtain with SiO
2Substrate is the carbon nano-tube n type field-effect transistor of back grid structure with Si.
Device performance such as Fig. 2, shown in Figure 3 of preparing with said method:
When the diameter of Single Walled Carbon Nanotube is 2nm, prepare with yttrium (Y) be the transfer characteristic of Single Walled Carbon Nanotube field-effect transistor of bottom grating structure of source-drain electrode and output characteristic respectively as shown in Figures 2 and 3, Fig. 2 shows that the ON resistance of this device is about 32k Ω under the room temperature, be n type ohmic contact, Fig. 3 shows that the saturation current of device can surpass 20 μ A.
Above result show in the nano material field-effect transistor with yttrium (Y) as metal electrode material can form ohmic contact with carbon nano-tube really, obtain high performance n type device.
Embodiment 2: the carbon nanotube field-effect transistor and the preparation thereof that with Y are top gate structure
As shown in Figure 4 be the carbon nanotube field-effect transistor of top gate structure with Y, its source (S) 8, leak (D) 10 electrode materials and be yttrium (Y), the electrode material of grid (G) 6 is Ti, Single Walled Carbon Nanotube 11 is positioned at HfO
2Under the gate dielectric layer 7, SiO
29 and the substrate formed of Si12 on.Concrete preparation comprises the following steps:
1), perhaps scattered carbon pipe solution is dripped to and obtain to be positioned at Si/SiO on the substrate by located growth
2Carbon nano-tube on the substrate;
2) note the particular location of carbon nano-tube by ESEM or atomic force microscope observation;
3) resist coating also forms the shape of source, drain electrode by optical exposure or electron beam lithography;
4) photoetching is good sample is put in the electron beam evaporation system, is evacuated to 3 * 10
-8About Torr, with the thick metal Y of speed evaporation one deck 50nm of 1A/s;
5) resist coating also passes through the shape that optical exposure or electron beam lithography form gate medium on carbon nano-tube;
6) sample is put into growth one deck gate dielectric layer (ZrO in the atomic layer deposition system
2, Al
2O
3Or HfO
2);
7) sample is put in the acetone peeled off, remove unwanted dielectric layer;
8) resist coating also passes through the shape that optical exposure or electron beam lithography form gate medium on carbon nano-tube;
9) photoetching is good sample is put in the electron beam evaporation system, is evacuated to 3 * 10
-8About Torr, with the speed of the 1A/s thick metal Ti of evaporation one deck 10nm again;
10) sample is put in the acetone peeled off, removing that unwanted metal level promptly obtains with Y is the carbon nano-tube n type field-effect transistor of top gate structure of source-drain electrode.
When the diameter of Single Walled Carbon Nanotube is 3nm, method for preparing go out with yttrium (Y) be the transfer characteristic of Single Walled Carbon Nanotube field-effect transistor of top gate structure of source-drain electrode and output characteristic respectively as shown in Figure 5 and Figure 6, Fig. 5 shows that top gate structure device on-off ratio at room temperature reaches 5 orders of magnitude, ON resistance is about 19k Ω, be n type ohmic contact, and the sub-threshold slope of device is about 73mV/Dec, and Fig. 6 shows that the device saturation current surpasses 30 μ A.
The foregoing description all is by being that the device architecture of conductive channel is set forth with the carbon nano-tube, but the inventive method is not limited in carbon nano electronic type FET device, can be used for preparation based on quasi-one-dimensional electron type FET devices of a peacekeeping such as other semiconductor nanowires, pipe, bands, and diode rectifier etc.The present invention also is not limited only to certain several device architecture, and any device technology based on marrow correct of the present invention all belongs to category of the present invention.
Claims (10)
1. the nanometer electronic device of a based semiconductor nano material comprises one dimension semiconductor nano material and the metal electrode that directly contacts with it, it is characterized in that, described metal electrode is a yttrium electrode.
2. nanometer electronic device as claimed in claim 1 is characterized in that, described one dimension semiconductor nano material is a carbon nano-tube.
3. nanometer electronic device as claimed in claim 1 is characterized in that, described nanometer electronic device is the electron type field-effect transistor, and its conductive channel is the one dimension semiconductor nano material, and source-drain electrode is a yttrium electrode.
4. the preparation method of the nanometer electronic device of a based semiconductor nano material, with the one dimension semiconductor nano material is conductive channel, adopt metallic yttrium as the contact electrode material, be connected setting up electrode between metallic yttrium and the semiconductor nano material by micro-processing technology.
5. preparation method as claimed in claim 4, it is characterized in that, setting up the concrete grammar that electrode is connected between metallic yttrium and semiconductor nano material is: the pattern form that forms required electrode by photoetching on the one dimension semiconductor nano material, evaporation layer of metal yttrium is peeled off then and is removed unwanted metal level again.
6. preparation method as claimed in claim 5 is characterized in that, evaporation metal yttrium in high vacuum environment.
7. preparation method as claimed in claim 6 is characterized in that, described high vacuum environment is to be evacuated to air pressure≤3 * 10
-8Torr.
8. preparation method as claimed in claim 5 is characterized in that, adopts block metallic yttrium to carry out evaporation.
9. preparation method as claimed in claim 5 is characterized in that, before evaporation the surface of metallic yttrium target is handled with acid, removes the oxide on surface.
10. preparation method as claimed in claim 5 is characterized in that, elder generation evaporates the oxide layer on metallic yttrium surface during evaporation, carries out the evaporation of official sample again.
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Cited By (3)
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|---|---|---|---|---|
| CN107597153A (en) * | 2017-10-13 | 2018-01-19 | 辽宁大学 | A kind of NEW TYPE OF COMPOSITE sound catalyst mMBIP MWCNT In2O3And its preparation method and application |
| CN110940709A (en) * | 2019-12-17 | 2020-03-31 | 北京理工大学 | Method for improving sensitivity of gas sensor |
| CN113552202A (en) * | 2020-04-26 | 2021-10-26 | 中国水产科学研究院 | Sensor and preparation method and application thereof |
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2009
- 2009-09-25 CN CN200910093547A patent/CN101692461A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107597153A (en) * | 2017-10-13 | 2018-01-19 | 辽宁大学 | A kind of NEW TYPE OF COMPOSITE sound catalyst mMBIP MWCNT In2O3And its preparation method and application |
| CN107597153B (en) * | 2017-10-13 | 2020-03-03 | 辽宁大学 | Novel composite acoustic catalyst mMBIP-MWCNT-In2O3And preparation method and application thereof |
| CN110940709A (en) * | 2019-12-17 | 2020-03-31 | 北京理工大学 | Method for improving sensitivity of gas sensor |
| CN113552202A (en) * | 2020-04-26 | 2021-10-26 | 中国水产科学研究院 | Sensor and preparation method and application thereof |
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Application publication date: 20100407 |