CN101685791B - Substrate supporting device and method for discharging static electricity by using same - Google Patents

Substrate supporting device and method for discharging static electricity by using same Download PDF

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CN101685791B
CN101685791B CN2008102233087A CN200810223308A CN101685791B CN 101685791 B CN101685791 B CN 101685791B CN 2008102233087 A CN2008102233087 A CN 2008102233087A CN 200810223308 A CN200810223308 A CN 200810223308A CN 101685791 B CN101685791 B CN 101685791B
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substrate
probe
support device
substrate support
raising board
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CN101685791A (en
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张小昂
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Abstract

The invention discloses a substrate supporting device and a method for discharging the static electricity by using the same. The substrate supporting device comprises a substrate base, a probe lifting mechanism and a static electricity discharging mechanism; a substrate can be placed on the substrate base; the probe lifting mechanism and the charging mechanism are arranged below the substrate; the static electricity discharging mechanism comprises a probe, a driving component and a switch; the probe penetrates through the substrate base and can move back and force relative to the substrate base; the driving component is used for driving the probe to move; and the switch is used for connecting the probe with the ground. In addition to the probe lifting mechanism, the substrate supporting device is only additionally provided with the static electricity discharging mechanism which comprises the probe, the damping component and the switch, and the substrate supporting device can be used for discharging the total static electricity left in the substrate. Compared with the prior art, the substrate supporting device has simple structure and lower producing and maintaining cost. Moreover, the method for discharging the static electricity by using the substrate supporting device has simple static electricity discharging process, does not need a complicate feedback mechanism to define a substrate stain limit for distinguishing, is not limited by the response time and can rapidly discharge the total static electricity left in the substrate in short time.

Description

Substrate support device and electrostatic release method thereof
Technical field
The present invention relates to the plasma process technical field, particularly a kind of substrate support device and electrostatic release method thereof.
Background technology
In the plasma process field, generally in the vacuum reaction chamber, substrate is carried out etching or adopts chemical vapour deposition technique to form semiconductor structure at substrate surface.In this process; Usually need utilize for example electrostatic chuck (ElectroStatic Chuck of substrate support device; ESC) substrate is fixed on the indoor specific station of vacuum reaction chamber; The process gas that then will be used for etching or deposition is transported to through pipeline among the vacuum reaction chamber, simultaneously at the indoor rf electric field that applies of vacuum reaction chamber, process gas is excited to plasmoid start working.
In the present plasma processing equipment; Be embedded with the single electrode or the bipolar electrode that are used to produce static in the substrate support devices such as electrostatic chuck; For example, be embedded with a electrode in the electrostatic chuck of bipolar electrode, be placed with substrate to be processed on this upper surface near the upper surface of electrostatic chuck.In the technical process; Utilize the ESC power supply on bipolar electrode, to apply high voltage direct current earlier; Make two electrodes gather the electric charge of opposed polarity respectively, induce the charge inducing different, that is to say with the polarity of electrode itself near the electrode of electrostatic chuck upper surface corresponding zone in substrate; Polarity near the charge inducing of corresponding region in electric charge in the electrode of electrostatic chuck upper surface and the substrate is opposite, and the electrostatic attraction between them makes substrate be adsorbed on the upper surface of electrostatic chuck and is fixed; After processing technology is accomplished; The ESC power supply applies reverse voltage again on said bipolar electrode; Electric charge in substrate, to induce with said charge inducing opposed polarity neutralizes, and accomplishes the static dispose procedure, and said electrostatic attraction is disappeared; Utilize the substrate that will rise after pin mechanism will process to hold up then, with manipulator substrate is taken out again from electrostatic chuck.
But; The method that applies reverse voltage through the ESC power supply generally can not be fully in substrate in charge inducing, left over remaining static toward contact, this is because the elimination of static receives influence of various factors; For example the height of reverse voltage, apply the reverse voltage time etc.; And for different processes, substrate also is different by the electric weight of electrostatic chuck absorption back institute static electrification, so the electric weight of the remaining static in static release back also is not quite similar.
The direct influence that remaining static brings is to rise after technology is accomplished in the process of pin mechanism picking-up substrate the bonding die phenomenon takes place; That is to say; The electrostatic attraction of remaining generation of static electricity makes substrate still be adsorbed on the surface of electrostatic chuck; And with remaining static to increase the bonding die phenomenon obvious more, cause substrate possibly depart from the center of vacuum reaction chamber or in the rise process, fall sheet, cause manipulator can't normally take out substrate; Also the fragment phenomenon can take place under the even more serious bonding die situation, pollute whole vacuum reaction chamber, need shutdown to open chamber and clear up.
To the problems referred to above; A kind of supporting arrangement of semiconductor chip is provided in the prior art, and its structure is as shown in Figure 1, and said supporting arrangement comprises: the substrate holder that is used to place semiconductor chip; Be used for rising pin mechanism with what said substrate holder was left in the substrate lifting; Be positioned at rise below the pin mechanism, be used to drive and rise the motor that pin mechanism goes up and down, connect said motor and rise the guide spiro rod of pin mechanism, and be used for limiting and rise the feedback mechanism of pin mechanism the substrate active force in the lifting process.
The said pin mechanism that rises comprises: the column raising board below the substrate holder is connected in the lifting group post on the said column raising board; Said lifting group post passes substrate holder and contacts with the bottom surface of substrate, and said column raising board also is provided with sealing ring through switch and variable resistor ground connection between said column raising board and the substrate holder.Said feedback mechanism comprises: gauges, motor controller and encoder; Have the bipolar electrode (not shown) in the said substrate holder, one of them electrode is near the upper surface of substrate holder.
After plasma process technology is accomplished; On the bipolar electrode of substrate holder, apply reverse voltage, open motor then, motor drives the said pin mechanism that rises through guide spiro rod and moves up; Contact with the bottom surface of substrate in case rise the lifting group post of pin mechanism, then substrate begins to move up and leaves substrate holder.When having left over remaining static on the substrate holder, because the effect of electrostatic attraction, lifting group post can not lift substrate, but makes substrate produce strain; Along with the lifting of lifting group post, this strain is also increasing, and gauges is monitored this strain value in real time and fed back signal to motor controller, when remaining static excessive; When said strain was increased to the value that may cause damaged substrate, motor controller was ended motor running, stops to apply effect of increasing power to rising pin mechanism; Simultaneously, close switch makes substrate ground connection, begins substrate is discharged; After having discharged static, motor controller order motor turns round again, thereby substrate band is left substrate holder.
What technique scheme adopted is the typical closed-loop reponse system; When the substrate strain value is increased to the value that may cause damaged substrate; Switch receives that signal discharges automatically, however problem be owing in substrate holder, introduced the feedback mechanism that comprises gauges, motor controller and encoder etc.; Structure is obviously comparatively complicated, has promoted the manufacturing and the maintenance cost of equipment.
Summary of the invention
The problem that the present invention solves provides a kind of substrate support device simple in structure, lower-cost.
Another problem that the present invention solves provide a kind of discharge process simply, electrostatic release method rapidly.
For addressing the above problem, the invention provides a kind of substrate support device, comprising: be used to place the substrate holder of substrate, be positioned at and rise pin mechanism and discharge mechanism below the substrate, said discharge mechanism comprises:
The probe that runs through said substrate holder and can move around with respect to substrate holder drives the driver part that said probe moves, and with the switch that is connected between said probe and the earth.
Optional, the said pin mechanism that rises comprises the lifting pin group that runs through said substrate holder and can move around with respect to substrate holder, the raising board that is connected with said lifting pin group, and drive the driver part that said lifting pin group moves;
Said probe is provided with damped part away from an end of substrate, and probe flexibly connects through said damped part and said raising board, and the driver part of said probe is the driver part of lifting pin group.
Optional; Probe is specially with the mode that raising board flexibly connects: it is the pilot hole of matched in clearance that the position of the corresponding probe of raising board is provided with probe; Probe stretch in the said pilot hole away from an end of substrate and with being connected of damped part, the sleeve of damped part below raising board is fixed on and rises on the needle plate.
Optional; The mode that probe and raising board flexibly connect is specially: probe stretches in the sleeve away from an end of substrate; And link to each other with sleeve through the embedded damped part of sleeve, probe and sleeve are matched in clearance, sleeve passes the raising board center and is fixedly connected with raising board.
Said probe is corresponding to the center of substrate.
The maximum damping force of said damped part is less than or equal to the gravity of substrate.
Probe does not contact under the state of substrate bottom surface, and the top of probe is higher than the top of lifting pin group.
Optional, the driver part of said probe is an electromagnetic component, and said probe is the ferromagnetism end corresponding with said electromagnetic component away from an end of substrate, and said ferromagnetism is terminal to be connected with the bottom of substrate holder through damped part.
The difference of the electromagnetic force of said electromagnetic component and the maximum damping force of damped part is less than or equal to the gravity of substrate.
Said probe is cylindrical, and the material of probe is an electric conducting material.
Said electric conducting material is the material of plasma resistant.
Said damped part is spring, hydraulic damping parts or air pressure damped part.
Accordingly, the present invention also provides a kind of electrostatic release method of substrate support device, comprising:
Electrode in the substrate holder applies reverse voltage;
The probe of discharge mechanism is connected substrate and the earth under the driving of driver part;
Lifting mechanism rises substrate from substrate holder.
Compared with prior art, technique scheme has the following advantages:
Said substrate support device has the only additional discharge mechanism that is made up of probe, damped part and switch on the basis that rises pin mechanism; Can the remaining static in the substrate be discharged fully; In terms of existing technologies, simple, manufacturing of apparatus structure and maintenance cost are lower.
In addition, the electrostatic release method of said substrate support device comes down to before rising pin mechanism rise substrate, to discharge the remaining static in the substrate; I.e. " discharge in advance "; Discharge process is simple, and the limit that does not need complicated feedback mechanism to define a substrate strain is distinguished, and does not receive the restriction of response time; Can be at short notice the remaining static of substrate be discharged rapidly, avoid taking place the possibility of bonding die.
Secondly, can regulate discharge time, and the probe through control discharge mechanism and the difference in height at the top of lifting pin group and the actuating speed of driver part realize; Once more, the probe of discharge mechanism is realized discharging function, and lifting pin group realizes rising the function of substrate, and both functions are separated separately, thereby can select to be fit to the material of self needs; At last, the discharge mechanism adaptive capacity of said substrate support device is strong, can adapt to the remaining static of various magnitudes, and discharge rapidly.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
A kind of structural representation of electrostatic chuck in Fig. 1 prior art;
Fig. 2 is the sketch map of substrate support device in the embodiment of the invention one;
Fig. 3 is the sketch map of the static release condition of substrate support device shown in Figure 2;
Fig. 4 is the sketch map of discharge mechanism in the embodiment of the invention two;
Fig. 5 is the sketch map of substrate support device in the embodiment of the invention three.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Secondly, the present invention combines sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of indication device structure can be disobeyed general ratio and done local the amplification, and said sketch map is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In the plasma processing equipment; The discharge mechanism of traditional substrate support device is owing to introduced the feedback mechanism (see figure 1) that comprises gauges, motor controller and encoder etc. in substrate holder; Structure is obviously comparatively complicated, thereby has promoted the manufacturing and the maintenance cost of equipment.
Secondly, the release of the remaining static of substrate makes substrate produce strain enough may to carry out during fragment greatly rising pin mechanism, need discern the strain that remaining static causes through gauges and whether reach discharge limit.When strain was excessive, gauges need spend the regular hour to the motor controller signal, and motor controller needs the regular hour to stop motor operations after receiving signal equally.In this process, still the column raising board continues to rise, although the response time is extremely short, substrate still possibly produce bigger strain.The response time of feedback mechanism is oversize relatively cause substrate maybe be under the situation that does not have enough time to discharge fragment.
Once more, too many to the discharge limit influencing factor, promptly gauges just can be sent stop signal when strain reaches much.Through in the reverse voltage and after, remaining static is uneven distribution in the substrate, and the position that changes the absorption of technological parameter meron changes, these precision to gauges have more or less also caused influence.
In addition, the substrate discharge is accomplished through column raising board ground connection, and this inevitable requirement column raising board is an electric conducting material.Electric conducting material major part for general is a metal, but metal plasma resistant poor ability corrodes in environment easily, has influenced useful life.
Based on this; The present invention provides a kind of substrate support device simple in structure, lower-cost; And the electrostatic release method essence of said substrate support device does; Remaining static in the substrate can be risen pin mechanism at substrate and risen quilt elimination fully before, can break off bonding die or fragment hidden danger that remaining static brings.
Embodiment one
Substrate support device in the present embodiment is an electrostatic chuck, and Fig. 2 is the structural representation of said substrate support device.This substrate support device comprises: the substrate holder 1 that is used to place substrate 2; Be positioned at and rise pin mechanism 3 and discharge mechanism 4 below the substrate 2; The said pin mechanism 3 that rises is used for after processing technology is accomplished, substrate being lifted from substrate holder, and discharge mechanism 4 is used for discharging the remaining static of substrate.
Be embedded with the bipolar electrode (not shown) in the said substrate holder 1, an electrode in the bipolar electrode is near the upper surface of substrate holder, and this bipolar electrode links to each other with external dc power, is used for making substrate to produce charge inducing, and this part structure is similar with conventional art.
The said pin mechanism 3 that rises comprises: the lifting pin group 31 that runs through said substrate holder 1 and can move around with respect to substrate holder, and the raising board 32 that is connected with said lifting pin group 31 drive the driver part (not shown) that said lifting pin group 31 moves.
Particularly, lifting pin group 31 be positioned at substrate 2 under, comprise three equally distributed cylindrical lifting pins at least, the four pin lifting pin groups that for example are symmetrically distributed with the center of substrate holder 1, the position of corresponding lifting pin group 31 is provided with through hole 11 in the substrate holder 1.Lifting pin group 31 is connected with raising board 32 away from an end of substrate, and raising board 32 links to each other with driver part through screw rod, and driver part can be motor.Lifting pin group 31 can move around in through hole 11 under the driving of motor, when lifting pin group 31 rises, can the substrate that discharge remaining static 2 be lifted from substrate holder 1.
Said discharge mechanism 4 comprises: the probe 41 that runs through said substrate holder 1 and can move around with respect to substrate holder 1, the damped part 42 that probe 41 is provided with away from an end 412 of substrate 2 is with the switch 6 that is connected between said probe 41 and the earth.
Have central through hole 12 in the substrate holder 2, probe 41 stretches in the central through hole 12, and then probe 41 is corresponding to the center of substrate 2.Probe 41 flexibly connects through damped part 42 and raising board 32 away from an end 412 of substrate 2; The driver part of probe 41 is the driver part of lifting pin group 31, and then driver part can drive lifting pin group 31 and probe 41 simultaneously together along moving around on the direction perpendicular to substrate 2.
Probe 41 is specially with the mode that raising board 32 flexibly connects: the position of raising board 32 corresponding probes 41 is provided with the pilot hole 321 that matches with probe 41; Probe 41 stretch in the said pilot hole 321 away from an end 412 of substrate 2 and with being connected of damped part 42, the sleeves 43 of damped part 42 below raising board 32 are fixed on and rise on the needle plate 32.
As shown in Figure 2, probe 41 does not contact under the state of substrate 2, and the top 411 of probe 41 is higher than the top 311 of lifting pin group 31, and 42 pairs of probes 41 of damped part this moment play supporting role.Fig. 3 is the sketch map of the static release condition of substrate support device shown in Figure 2; As shown in Figure 3; Under the state of probe 41 and substrate 2 butts, probe 41 moves in sleeve 43 with respect to raising board 32 along pilot hole 321, and damped part 42 is compressed; The maximum damping force of said damped part 42 is less than or equal to the gravity of substrate, and probe 41 can not rise substrate 2 separately all the time from substrate holder 1 like this.
Said damped part 42 can be spring, hydraulic damping parts or air pressure damped part, spring preferably, and the spring cost is lower, and with respect to the damped part of other kinds, can the vacuum reaction chamber at substrate support device place not polluted.
Said probe 41 is cylindrical, and the material of probe is an electric conducting material, and said electric conducting material is preferably the material of plasma resistant, can guarantee probe in technical process not by plasma erosion, increase the service life.
Introduce the electrostatic release method of said substrate support device below:
Step 1 applies reverse voltage to the electrode in the substrate holder.
After technical process is accomplished, as shown in Figure 2, the probe 41 that rises the lifting pin group 31 of pin mechanism 3 and the mechanism 4 of discharging all be positioned at substrate 2 below, do not contact with substrate 2.External dc power applies reverse voltage (with respect to making substrate 2 be adsorbed on the voltage that 1 last time of substrate holder applies) to the electrode in the substrate holder 1; At this moment; Charge inducing major part in substrate 2 bottom surfaces is neutralized; But the still residual remaining static that part is arranged, this part remaining static makes substrate 2 still be adsorbed on the substrate holder 1.
Step 2, discharge mechanism connects substrate and the earth.
Close switch 6 connects discharge mechanism 4 and the earth, under the driving of driver part; Discharge mechanism 4 rises with rising pin mechanism 3, because the top 411 of probe 41 is higher than the top 311 of lifting pin group 31, probe 41 touches the bottom surface of substrate 2 prior to lifting pin group 31; So; The top 411 butt substrates 2 of probe 41, the remaining static in substrate 2 bottom surfaces is imported into the earth through the probe 41 that electric conducting material constitutes, and substrate 2 recovers electric neutrality.
Driver part drives probe 41 to be continued to rise with lifting pin group 31, and probe 41 is compressed damped part 42 owing to propped up and move downward with respect to raising board 32 by substrate 2; Because the maximum damping force of damped part 42 is less than or equal to the gravity of substrate 2, so before lifting pin group 31 contact substrates 2, substrate 2 can not risen by probe 41.
Step 3, lifting mechanism rises substrate from substrate holder.
Lifting pin group 31 continues to rise and abut to substrate 2, and the process that remaining static discharges so far finishes, and the electrostatic attraction between substrate 2 and the substrate holder 1 disappears; So; Substrate 2 is risen by lifting pin group 31 and probe 41, leaves substrate holder 1, and then utilizes manipulator that substrate 2 is taken out.
In substrate 2 rise processes, because probe 41 is positioned at the center of substrate holder 1, cooperate with equally distributed lifting pin group 31, can keep rising the balance of process substrate 2.
The said substrate support device of present embodiment has the only additional discharge mechanism that is made up of probe, damped part and switch on the basis that rises pin mechanism; Can the remaining static of substrate be discharged fully; In terms of existing technologies, simple in structure, manufacturing and maintenance cost are lower.
In addition; The electrostatic release method of said substrate support device comes down to before rising pin mechanism rise substrate, to discharge the remaining static in the substrate, i.e. " discharge in advance "; The limit that does not need complicated feedback mechanism to define a substrate strain is distinguished; Do not receive the restriction of response time, can avoid all that the possibility of bonding dies takes place at short notice with the remaining static release of substrate.
Secondly, can regulate discharge time, and the probe through control discharge mechanism and the difference in height at the top of lifting pin group and the actuating speed of driver part realize; Once more, the probe of discharge mechanism is realized discharging function, and lifting pin group realizes rising the function of substrate, and both functions are separated separately, thereby can select to be fit to the material of self needs; At last, the discharge mechanism adaptive capacity of said substrate support device is strong, can adapt to the remaining static of various magnitudes, and discharge rapidly.
In the above substrate support device; Probe stretches in the sleeve through the pilot hole on the raising board; When probe moved around with respect to raising board, pilot hole was defined in the moving direction of probe vertically and the direction of raising board, in addition; The parts of all right as a whole formula of probe and sleeve specifically specify in following examples.
Embodiment two
Fig. 4 is the structural representation of discharge mechanism in the present embodiment; As shown in Figure 4; Probe 44 stretches in the sleeve 45 away from an end of substrate, and links to each other with sleeve 45 through the embedded damped part 46 of sleeve, and probe 44 is a matched in clearance with sleeve 45; Probe 44 can move around in sleeve 45, and sleeve 45 passes the raising board center and is fixedly connected with raising board.Other structures and embodiment one are similar, repeat no more at this.
Be that with the difference of embodiment one probe 44 no longer leads through raising board, but directly the sleeve 45 through embedded damped part 46 leads.Wherein, sleeve 45 outer walls can threading or other structure, so that be fixed on the raising board.This all-in-one-piece simple in structure and also be convenient to the assembling.
Among above embodiment one and the embodiment two, the driver part of said probe is the driver part of lifting pin group, and also promptly, driver part drives probe simultaneously and lifting pin group moves, and in addition, probe can also have independent driver part.
Embodiment three
Fig. 5 is the structural representation of the said substrate support device of present embodiment, and said substrate support device comprises: be used to place the substrate holder 1 of substrate, be positioned at and rise pin mechanism (not shown) and discharge mechanism 7 below the substrate 2.
Said discharge mechanism 7 comprises: the probe 71 that runs through said substrate holder 1 and can move around with respect to substrate holder 1 drives the driver part that said probe 71 moves, with the switch 6 that is connected between said probe 71 and the earth.
The driver part of probe 71 is an electromagnetic component 72, and probe 71 is that the ferromagnetism corresponding with said electromagnetic component 72 is terminal 712 away from an end of substrate 1, and said ferromagnetism terminal 712 is connected with the bottom of substrate holder 1 through damped part 73.
Said electromagnetic component 72 is for connecting the electromagnet of external power source; Electromagnet is positioned at the below of the ferromagnetism terminal 712 of probe 71 in the present embodiment; After close switch 721 makes the magnet spool energising; Electromagnet applies the electromagnetic force towards substrate 2 directions to probe, and the number of turn through coil on the regulating magnet or the voltage of DC power supply can change the size of electromagnetic force.Electromagnet also can be positioned at the top of the ferromagnetism terminal 712 of probe 71 in addition.
It is similar to rise pin mechanism and previous embodiment and the pin mechanism that rises of the prior art, repeats no more at this.
In the present embodiment, the electromagnetic force that discharge mechanism produces through electromagnet is controlled the up-down of probe 71, thereby realizes the rapid discharge to substrate 2.Discharge mechanism with rise pin mechanism and be not connected, so the work of the mechanism of discharging is independent of and rises pin mechanism, decided by the switch closure time of electromagnet discharge time fully.In addition, the discharge probe because discharge mechanism with rise pin mechanism and be not connected, so can be placed on other position, needn't be the center.Such structure is simplified structure further, reduces and makes and maintenance cost.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Need to prove; Rise pin mechanism and be not limited to above structure; Can also be for other versions of the prior art rise pin mechanism; Said probe with rise that pin mechanism is connected and driven and move around with respect to substrate holder by same driver part, equally also can realize the purpose of technical scheme of the present invention, also within protection scope of the present invention.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.

Claims (12)

1. a substrate support device is characterized in that, comprising: be used to place the substrate holder of substrate, be positioned at and rise pin mechanism and discharge mechanism below the substrate, wherein:
Said discharge mechanism comprises: the probe that runs through said substrate holder and can move around with respect to substrate holder, drive the driver part that said probe moves, and with the switch that is connected between said probe and the earth;
The said pin mechanism that rises comprises: the lifting pin group that runs through said substrate holder and can move around with respect to substrate holder, and the raising board that is connected with said lifting pin group, and drive the driver part that said lifting pin group moves;
Said probe is provided with damped part away from an end of substrate, and probe flexibly connects through said damped part and said raising board, and the driver part of said probe is the driver part of lifting pin group.
2. substrate support device according to claim 1; It is characterized in that; Probe is specially with the mode that raising board flexibly connects: it is the pilot hole of matched in clearance that the position of the corresponding probe of raising board is provided with probe; Probe stretch in the said pilot hole away from an end of substrate and with being connected of damped part, the sleeve of damped part below raising board is fixed on and rises on the needle plate.
3. substrate support device according to claim 1; It is characterized in that; The mode that probe and raising board flexibly connect is specially: probe stretches in the sleeve away from an end of substrate; And link to each other with sleeve through the embedded damped part of sleeve, probe and sleeve are matched in clearance, sleeve passes the raising board center and is fixedly connected with raising board.
4. according to each described substrate support device of claim 1 to 3, it is characterized in that said probe is corresponding to the center of substrate.
5. according to each described substrate support device of claim 1 to 3, it is characterized in that the maximum damping force of said damped part is less than or equal to the gravity of substrate.
6. according to each described substrate support device of claim 1 to 3, it is characterized in that probe does not contact under the state of substrate bottom surface, the top of probe is higher than the top of lifting pin group.
7. substrate support device according to claim 1; It is characterized in that; The driver part of said probe is an electromagnetic component, and said probe is the ferromagnetism end corresponding with said electromagnetic component away from an end of substrate, and said ferromagnetism is terminal to be connected with the bottom of substrate holder through damped part.
8. substrate support device according to claim 7 is characterized in that, the difference of the electromagnetic force of said electromagnetic component and the maximum damping force of damped part is less than or equal to the gravity of substrate.
9. according to claim 1 or 7 described substrate support devices, it is characterized in that said probe is cylindrical, the material of probe is an electric conducting material.
10. substrate support device according to claim 9 is characterized in that, said electric conducting material is the material of plasma resistant.
11., it is characterized in that said damped part is spring, hydraulic damping parts or air pressure damped part according to claim 1 or 7 described substrate support devices.
12. the electrostatic release method of a substrate support device as claimed in claim 1 comprises:
Electrode in the substrate holder applies reverse voltage;
The probe of discharge mechanism is connected substrate and the earth under the driving of driver part;
Lifting mechanism rises substrate from substrate holder.
CN2008102233087A 2008-09-25 2008-09-25 Substrate supporting device and method for discharging static electricity by using same Active CN101685791B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1174446A (en) * 1996-06-21 1998-02-25 索尼株式会社 Method of holding wafer, method of removing wafer and electrostatic chucking device
CN1194066A (en) * 1995-07-10 1998-09-23 沃特金斯·约翰逊公司 Electrostatic chuck assembly
CN101261927A (en) * 2007-03-09 2008-09-10 台湾积体电路制造股份有限公司 System for decharging a wafer, electrostatic adsorbing device and integrated circuit manufacture method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1194066A (en) * 1995-07-10 1998-09-23 沃特金斯·约翰逊公司 Electrostatic chuck assembly
CN1174446A (en) * 1996-06-21 1998-02-25 索尼株式会社 Method of holding wafer, method of removing wafer and electrostatic chucking device
CN101261927A (en) * 2007-03-09 2008-09-10 台湾积体电路制造股份有限公司 System for decharging a wafer, electrostatic adsorbing device and integrated circuit manufacture method

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